한국전기전자재료학회:학술대회논문집 (Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference) (Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference)
한국전기전자재료학회 (The Korean Institute of Electrical and Electronic Material Engineers)
- 연간
- 한국전기전자재료학회 2004년도 추계학술대회 논문집
- 한국전기전자재료학회 2004년도 추계학술대회 논문집 Vol.17
- 한국전기전자재료학회 2004년도 하계학술대회 논문집 Vol.5 No.2
- 한국전기전자재료학회 2004년도 하계학술대회 논문집 Vol.5 No.1
- 한국전기전자재료학회 2004년도 춘계학술대회 논문집
- 한국전기전자재료학회 2004년도 춘계학술대회 논문집 방전 플라즈마 유기절연재료 초전도 자성체연구회
- 한국전기전자재료학회 2004년도 춘계학술대회 논문집 디스플레이 광소자분야
- 한국전기전자재료학회 2004년도 제6회 학술대회 논문집 일렉트렛트 및 응용기술연구회
- 한국전기전자재료학회 2004년도 춘계학술대회 논문집 반도체 재료 센서 박막재료 전자세라믹스
- 한국전기전자재료학회 2003년도 추계학술대회 논문집 Vol.16
- 한국전기전자재료학회 2003년도 제5회 영호남 학술대회 논문집
- 한국전기전자재료학회 2003년도 하계학술대회 논문집 Vol.4 No.2
- 한국전기전자재료학회 2003년도 하계학술대회 논문집 Vol.4 No.1
- 한국전기전자재료학회 2003년도 춘계학술대회 논문집 유기절연재료 방전 플라즈마연구회
- 한국전기전자재료학회 2003년도 제5회 학술대회 논문집 일렉트렛트 및 응용기술연구회
- 한국전기전자재료학회 2003년도 춘계학술대회 논문집 초전도 자성체 연구회
- 한국전기전자재료학회 2003년도 춘계학술대회 논문집 센서 박막재료 반도체 세라믹
- 한국전기전자재료학회 2003년도 춘계학술대회 논문집 기술교육전문연구회
- 한국전기전자재료학회 2003년도 춘계학술대회 논문집 디스플레이 광소자분야
- 한국전기전자재료학회 2002년도 추계학술대회 논문집 Vol.15
- 한국전기전자재료학회 2002년도 제4회 영호남학술대회 논문집
- 한국전기전자재료학회 2002년도 하계학술대회 논문집 Vol.3 No.2
- 한국전기전자재료학회 2002년도 하계학술대회 논문집
- 한국전기전자재료학회 2002년도 춘계학술대회 논문집 유기절연재료 전자세라믹 방전플라즈마 일렉트렛트 및 응용기술
- 한국전기전자재료학회 2002년도 춘계학술대회 논문집 센서 박막재료 반도체재료 기술교육
- 한국전기전자재료학회 2002년도 춘계합동학술대회 논문집
- 한국전기전자재료학회 2002년도 춘계학술대회 논문집 디스플레이 광소자 분야
- 한국전기전자재료학회 2002년도 춘계학술대회 논문집 초전도 자성체
한국전기전자재료학회 2009년도 추계학술대회 논문집
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Surface analysis on defective wire-bonding pads are performed in flash memory assembly. Week wire bonding may cause a significant effect on the final product reliability, and the surface condition of the aluminum bond pads is critical in terms of product reliability. To find out possible week bonding on semiconductor interconnects, ball sheer test (BST) has been performed. On some defective or week bonded pads, we have investigated the surface contents, assuming that the week bonding is induced from the surface conditions. AES and XPS are employed for the quantitative surface analysis on defective dies.
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Thin-film-transistors (TFTs) that can be prepared at low temperatures have attracted much attention because of the great potential for transparent and flexible electronics. One of the mainstreams in this field is the use of organic semiconductors such as pentacene. But device performance of the organic TFTs is still limited due to low field-effect mobility and rapid degradation after exposing to air. Alternative approach is the use of amorphous oxide semiconductors as a channel. Amorphous oxide semiconductors (AOSs) based TFTs showed the fast technological development, because AOS films can be fabricated at room temperature and exhibit the possibility in application like flexible display, electronic paper, and larges solar cells. Among the various AOSs, a-IGZO has lots of advantages because it has high channel mobility, uniform surface roughness and good transparency. [1] The high mobility is attributed to the overlap of spherical s-orbital of the heavy post-transition metal cations. This study demonstrated the effect of the variation in channel thickness from 30nm to 200nm on the TFT device performance. When the thickness was increased, turn-on voltage and subthreshold swing was decreased. The a-IGZO channels and source/drain metals were deposited with shadow mask. The a-IGZO channel layer was deposited on
$SiO_2$ /p-Si substrates by RF magnetron sputtering, where RF power is 150W. And working pressure is 3m Torr, at$O_2/Ar$ (2/28 sccm) atmosphere. The electrodes were formed with electron-beam evaporated Ti (30 nm) and Au (70 nm) bilayer. Finally, Al (150nm) as a gate metal was thermal-evaporated. TFT devices were heat-treated in a furnace at 250$^{\circ}C$ and nitrogen atmosphere for 1hour. The electrical properties of the TFTs were measured using a probe-station. The TFT with channel thickness of 150nm exhibits a good subthreshold swing (SS) of 0.72 V/decade and on-off ratio of$1{\times}10^8$ . The field effect mobility and threshold voltage were evaluated as 7.2 and 8 V, respectively. -
We present an alternative process whereby deuterium is delivered to the location where the gate oxide reside by an implantation process. Deuterium ions were implanted using different energies to account for the topography of the overlaying layers and placing the D peak at the top of gate oxide. A short anneal at forming gas was performed to remove the D-implantation damage. We have observed that deuterium ion implantation into the gate oxide region can successfully remove the interface states and the bulk defects.
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In this paper, we investigated the dependence of HCI (Hot Carrier Immunity) degradation and device performance on channel orientation in sub-micron PMOSFET. Although device performance (
$I_{D.sat}$ vs.$I_{Off}$ ) was improved as the transistor angle increased HC immunity was degraded. Therefore, consideration of reliability characteristics as well as dc device performance is highly necessary in channel stress engineering of next generation CMOSFETs. -
Thin-film transistors (TFTs) were fabricated using amorphous indium gallium zinc oxide (a-IGZO) channels by rf-magnetron sputtering at room temperature. We have studied the effect of oxygen partial pressure on the threshold voltage(
$V_{th}$ ) of a-IGZO TFTs. Interestingly, the$V_{th}$ value of the oxide TFTs are slightly shifted in the positive direction due to increasing$O_2$ ratio from 1.2 to 1.8%. The device performance is significantly affected by varying$O_2$ ratio, which is closely related with oxygen vacancies provide the needed free carriers for electrical conduction. -
본 연구에서는 MLCC 그린칩의 예열공정에서 나타난 수축 열변형 현상을 관찰하기 위해 각 구간별 온도를 달리하여 열-기계분석 Thermo-mechanical Anlaysis(TMA)으로 크립 특성 실험이 진행되었다. 수축 변형이 없는 안정화 구간을 확인하였으며, 분석결과를 바탕으로 제조기술에 적용가능한 간단한 수식을 이끌어내었다.
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Transparent BNO thin films were grown on Al-doped ZnO (AZO)/Ag/AZO/polyethersulfon (PES) (abbreviated as AAAP) transparent electrodes at a low temperature by the NCD technique. The BNO films grown on the crystallized AZO/Ag/AZO (AAA) electrodes exhibit an amorphous phase with a root mean square (rms) roughness of approximately 2 nm in the range of deposition temperature. The capacitors (Pt/BNO/AAAP) with BNO films grown at
$100^{\circ}C$ show a dielectric constant of 24 and dissipation factor of 8% at 100 kHz, a leakage current density of about$8{\times}10^{-6}A/cm^2$ at an applied voltage of 1.0V. The optical transmittances of the BNO/AAAP exhibited above 80% at wavelength of 550nm at all of deposition temperature. The mechanical stability of the BNO/AAA as well as AAA electrode with the PES substrates through the bending was ensured for flexible electronic device applications. The transparent BNO capacitors grown on AAAP are powerful candidate for integration with the transparent solar cells. -
본 연구는 MLCC 제조공정중 그린상태에서의 강도를 유지하기 위한 고분자 바인더의 거동을 예측하고, 제조공정중 나타난 가열후 수축 현상을 규명하고자 하였다. 이를 위해 메커니즘에 대한 가설을 수립하고 이를 여러가지 분석기법과 컴퓨터 시뮬레이션을 통해 확인하였으며, 현장의 제조기술 부문에서 용이하게 사용할 수 있도록 간단한 수학적 모델링으로 표현하였다. 수학적 모델링은 제품을 이용한 실험과 비교하여 정확도를 검증하였으며, 이러한 해석기법은 대표체적요소(representative volume element)을 이용하여 MLCC 그린바 (Bar)의 해석까지 가능하도록 응용범위를 향상시켰다.
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We weal know that PbO was poisonous and prone to volatilize, then to pollute the circumstance and hurt to people, so we should dope other innocuous additives instead of lead to increase Tc of composite PTC material. In order to prepare lead-free
$BaTiO_3$ -based PTC with middle Curie point, the incorporation on$(BaNaK)(TiNb)O_3$ into$BaTiO_3$ -based ceramics was investigated on samples containing 0.05, 0.07 and 0.1mol% of$(BaNaK)(TiNb)O_3$ .$(BaNaK)(TiNb)O_3$ was compounded as standby material by conventional solid-state reaction technique. The starting materials were$Na_2O_3$ ,$K_2CO_3$ ,$BaCO_3$ ,$TiO_2$ and$Nb_2O_5$ powder, and using solid-state reaction method, too. The microstructure of samples were investigated by SEM, DSC, XRD and dielectric properties. Phase composition and lattice parameters were investigated by X-ray diffraction. Also, we are measure the resistivity of sintered bodies with calcinations condition. -
본 연구는 MLCC 구성성분의 증발/비등에 의한 저분자물질의 제거가 bar 수축에 미치는 영향도를 평가하기 위해, 압착 bar에서 발생하는 고농도의 out gas를 정량하기 위한 최적 system을 구축하고자 하였다. gas 포집에 범용적으로 사용하는 Purge & Trap sampler 대신 Heating block를 사용하여 gas를 발생시키고 동시에 solvent에 용해시킴으로써 고농도의 시료가 희석될 수 있는 전처리 장치를 디자인하였다. 그 결과 고농도 gas 주입에 의한 장비오염과 peak saturation 문제가 해결되었고, gas phase의 시료를 liquid phase로 상전이 시켜 autosampler를 이용한 정확한 량의 시료 주입이 가능하였다. System의 Gage Linearity와 Bias는 각각 1.7%와 1.3%로 개선이 필요없는 수준의 정확도를 가졌다.
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In this study, we investigated the effects of Cr dopant on the bulk trap level and grain boundary characteristics of
$Bi_2O_3$ -based ZnO (ZB) using dielectric functions such as$Z^*$ ,$Y^*$ ,$M^*$ ,${\varepsilon}^*$ , and$tan{\delta}$ . More than two bulk traps of$Zn_i$ and$V_o$ probably in different ionization states could be identified in ZBCr($ZnO-Bi_2O_3-Cr_2O_3$ ). The grain boundaries of ZBCr could be electrochemically divided into two types: sensitive to ambient oxygen and thus electrically active one and oxygen-insensitive and thus electrically inactive one. -
In many applications for display with LED, the thermal behavior of LED is most important issue in view of thermal management. The optical requirements of the displays for various applications make the designer to drive the LED at or over their on-design condition to achieve performances requested by users. In practical cases of large-sized TV with LED back light unit (BLU), the problem of increasing LED temperature can affect the reliability of LED itself and the optical performances of BLU as an assembly of LED. In this paper, the thermal management design of LED back light unit(BLU) for large-sized TV was performed
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발광다이오드 (Light-Emitting-Diode, LED)의 균일한 전류분포, 높은 광출력 및 내부양자효율 확보를 위해서는 활성영역으로의 균일한 전류주입이 필수적이며 이를 위해서는 최적화된 전극패턴 설계가 매우 중요하다. 따라서 현재까지지도 균일한 전류확산을 위한 전극 패턴 설계에 많은 연구가 다각도로 진행되고 있으며, 전극 패턴에 따른 LED의 성능향상 또한 보고되고 있다. 전극패턴과 더불어 중요시 되는 것은 바로 전류주입에 필수적인 전극 패드이다. 최근에는 LED가 대면적화 되어감에 따라, 패드의 개수가 증가하고 그 위치에 따른 영향력 및 중요성 또한 높아지고 있다. 본 연구에서는 동일한 전극 패턴을 갖는 Planar LED에서의 전류확산 극대화를 위한 패드의 위치에 따른 전기적 및 광학적 특성에 대해 연구하였다.
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Single-walled carbon nanotubes (SWCNTs) have attracted much attention as promising materials for transparent conducting films (TCFs), thanks to their superior electrical conductivity, high mechanical strength, and complete flexibility. The CNT-based TCFs can be used in a variety of application fields as flexible, transparent electrodes, including touch panel screens, flexible electronics, transparent heaters, etc. First of all, this study investigated the effect of a variety of surfactants on the dispersion of SWCNTs in an aqueous solution. Following the optimization of the dispersion by surfactants, flexible TCFs were fabricated by spraying the CNT suspension onto poly(ethylene terephthalate) (PET) substrates. The sheet resistances of the TCFs having different surfactants were investigated with treatment in nitric acid (
$HNO_3$ ) whose concentration and period of treatment time were varied. It seems that the$HNO_3$ removes the surfactants from and is simultaneously doped into the SWCNT network, reducing the contact resistance between CNTs. TCFs were characterized by UV-VIS spectroscopy, thermogravimetric analyzer (TGA), scanning electron microscopy (SEM), and four-point probe. -
최근 다양하게 연구되고 있는 무분극(nonpolar) 갈륨질화물(GaN) 소재는 자발분극(spontaneous polarization) 및 압전분극(piezoelectric polarization) 등이 발생하지 않아 높은 내부양자효율의 확보가 가능하며, 이러한 장점을 바탕으로 고효율 특성을 갖는 발광다이오드(light-emitting diode) 및 고속 전자소자 등으로의 적용을 위한 연구가 활발히 수행 중 이다. 하지만, 무분극 GaN LED의 구현 시, GaN 박막의 비등방성 성장으로 인한 박막의 막질 저하와 함께 표면에 혼재하는 Ga층과 N층에서 기인되는 절연층의 생성으로 인한 오믹전극 형성의 어려움이 대두되고 있다. 따라서, 고효율의 무분극 GaN LED 구현을 위해서는 무분극 GaN층의 질소층 제거를 위한 표면처리 공정과 더불어 금속/무분극 GaN층 간 발생되는 쇼트키 장벽층의 높이(Schottky barrier height)를 제어하는 연구가 선행되어야 한다. 본 논문에서는 무분극 GaN LED 적용을 위한 n-형 전극물질 및 오믹조건 구현을 위한 금속/무분극 GaN층간 SBH의 제어방법에 대한 연구를 수행하였다.
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Recently, Light Emitting Diode(LED) has many advantages in comparison with conventional light sources; low power consumption, long lifetime, and less environmental pollution. Therefore, the use of LED is multiplying and increasing rapidly. In general, however, spherical lens is used in LED-lighting which cause many problems induces by optical aberration of spherical lens; low illumination, a yellow belt, unpleasant feeling in human eye. As a potential solution of this problem, aspherical lens can be employed. This study reports the improvement of LED-lighting performance by adopting aspherical lens. From the commercial program,
$LightTools^{TM}$ , the optical problem were ensured. And then, to improve this problem, optimum aspheric form was designed using Code$V^{TM}$ . -
우리는 전면 발광 소자에서 두께에 따른 발광 스펙트럼을 연구하였다. 소자 구조는 Al(100nm)/TPD(40nm)/Alq3(60nm)/LiF(0.5nm)/Al(2nm)/Ag(30nm)으로 하였다. N,N'-diphenyl-N,N'-di(m-tolyl)-benzidine(TPD)와 tris-(8-hydroxyquinoline) aluminium(Alq3)는 전공 수송층과 발광층으로 각각 사용되었다. 반투명 전극은 Li/Al/Ag로 하였다. 유기물층과 전극은
$2\times10-5$ torr의 진공도에서 열 증착하였다. 유기물과 금속의 증착 속도는$0.5\sim1.0{\AA}/s$ 과$0.5\sim5{\AA}/s$ 로 하였다. 제작된 소자는 두께가 증가할 수록 장파장으로 이동하는 현상을 보였다. 이러한 현상은 마이크로 캐비티 이론으로 설명할 수 있다. 소자는 이론적인 마이크로 캐비티 수식을 이용하여 분석하기 위해 각각의 변수를 이용하여 실험과 이론을 비교하였을 때, 각각의 스펙트럼이 거의 일치하는 것을 확인할 수 있었다. -
최근 산화물 반도체와 나노소자 대한 관심이 날로 높아지고 있는 가운데 산화아연(ZnO) 나노구조를 이용한 나노소자 제작이 많이 연구되고 있다. 산화아연은 c축으로 우선 배향성을 가지는 우르짜이트 구조로써, 나노선 성장이 다른 산화물에 비해 용이하고 그 물리적, 화학적 특성이 안정 무수하다. 이러한 산화아연 나노선 제작법 가운데, 유기금속화학기상증착법은 다른 성장법에 비해 결정학적 광학적 특성이 우수하고 성장속도가 빨라 고품질 나노선 성장에 용이한 장비로 각광받고 있다. 하지만 bottom-up 공정을 기반으로 한 나노소자제작에서 몇 가지 문제점을 가지고 있다. 1) 수직형 대면적 성장, 2) 나노선 밀도 조절의 어려움, 3) 기판과의 계면층에 자발적으로 생성되는 계면층의 제거, 4) 고온성장시 precursor의 증발 문제 등이 그것이다. 본인은 이러한 문제점을 해결하기 위해 산화아연 나노구조 성장 시, 마그네슘(Mg)을 도입하여, 각 원소의 함량 분포 정도에 따라 기판 표면에 30nm 두께 미만의 상분리층(단결정+비정질층)을 자발적으로 형성시켰다. 성장이 진행됨에 따라, 아연이 rich한 단결정 층에서는 나노선이 선택적으로 성장하게 하였고, 마그네슘이 rich한 비정질 층에서는 성장이 이루어지지 않게 하였다. 따라서 산화아연이 증발되는 온도영역에서 10nm 이하 직경을 가지는 나노선을 자발적으로 계면층 없이 수직 성장하였다. 또한, 표면의 단결정, 비정질의 사이즈를 Mg 함량으로 적절히 조절한 결과, 산화아연계 나노월 구조성장이 가능하였다.
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Recently, the nanowire configuration of GST showed nanosecond-level phase switch at very low power dissipation, suggesting that the nanowires could be ideal for data storage devices. In spite of many advantages of IST materials, their feasibility in both thin films and nanowires for electronic memories has not been extensively investigated. The synthesis of the chalcogenide nanowires was mainly preformed via a vapor transport process such as vapor-liquid-solid (VLS) growth at a high temperature. However, in this study, IST nanowires as well as thin films were prepared at a low temperature (
${\sim}250^{\circ}C$ ) by metal organic chemical vapor deposition(MOCVD) method, which is possible for large area deposition. The IST films and/or nanowires were selectively grown by a control of working pressure at a constant growth temperature by MOCVD. In-Sb-Te NWs will be good candidate materials for high density PRAM applications. And MOCVD system is powerful for applying ultra scale integration cell. -
ENIG(Electroless Nickel Immersion Gold) is the surface treatment method that is used most widely at fine pitch's SMT and BGA packaging process. In this paper, we have studied the effect of P content variation during ENIG process on those phenomena related to the solder joint. The effect of P content was discussed using the results obtained from FE-SEM, EPMA, EDS and FIB. Finally, it was concluded that the more P-content in Ni layer, the thicker P-rich layer.
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Zinc Oxide (ZnO) nanorod were grown on Si wafer by a thermal evaporation method at various temperatures. And their structure and optical properties were measured using Photoluminescence(PL), Scanning electron microscopy(SEM), and X-ray diffraction(XRD) analysis.
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Vertically aligned arrays of mm-long multi-walled carbon nanotubes (MWCNTs) on Si substrates have been synthesized by water-assisted thermal chemical vapor deposition (CVD). The growth of CNTs was investigated by changing the experimental parameters such as growth temperature, growth time, gas composition, annealing time, catalyst thickness, and Al underlayer thickness. The 0.5-nm-thick Fe served as catalyst, underneath which Al was coated as a catalyst support as well as a diffusion barrier on the Si substrate. We grew CNTs by adding a little amount of water vapor to enhance the activity and the lifetime of the catalyst. Al was very good at producing the nm-size catalyst particles by preventing "Ostwald ripening". The Al underlayer was varied over the range of 15~40 nm in thickness. The optimum conditions for the synthesis parameters were as follows: pressure of 95 torr, growth temperature of
$815^{\circ}C$ , growth for 30 min, 60 sccm Ar + 60 sccm$H_2$ + 20 sccm$C_2H_2$ . The water vapor also had a great effect on the growth of CNTs. CNTs grew 5.03 mm long for 30 min with the water vapor added while CNTs were 1.73 mm long without water vapor at the same condition. As-grown CNTs were characterized by using scanning electron microscopy (SEM), high resolution transmission electron microscopy (HRTEM), and Raman spectroscopy. High-resolution transmission electron microscopy showed that the as-grown CNTs were of ~3 graphitic walls and ~6.6 nm in diameter. -
In this study, we have fabricated the 3 wt%
$Li_2CO3$ doped$(Ba,Sr)TiO_3$ thick films on the Ag/Pd printed$Al_2O_3$ substrates for the LTCCs (Low Temperature Co-fired Ceramics) applications. From the X-ray diffraion analysis, 3 wt%$Li_2CO3$ doped BST thick films on the Ag/Pd printed$Al_2O_3$ substrates, which sintered at 900$^{\circ}C$ have perovskite structure without any pyro phase. The dielectric properties of 3 wt%$Li_2CO3$ doped BST thick films were measured from 1 kHz to 1 MHz. To investigate the electrical properties of 3 wt%$Li_2CO3$ doped BST thick films, we employed the impedance spectroscopy. The complex impedance of 3 wt%$Li_2CO3$ doped BST thick films were measured from 20 Hz to 1 MHz at the various temperatures. -
In this paper, RFID antenna is designed and realized for UHF (860 ~ 960 MHz) application. Aluminium is used for patterning on polythelene terephalate (PET) substrate using etching process. The thickness of the substrates is 50
${\mu}m$ and for copper and aluminium, the thickness is typically 18${\mu}m$ or 35${\mu}m$ and 10${\mu}m$ respectively. As a result of simulation, maximum return loss is indicated 0.04 dB at 960 MHz and 0.08 dB at 900 MHz. -
Silicon carbide (SiC) is a wide-bandgap semiconductor that has materials properties necessary for the high-power, high-frequency, high-temperature, and radiation-hard condition applications, where silicon devices cannot perform. SiC is also the only compound semiconductor material. on which a silicon oxide layer can be thermally grown, and therefore may fabrication processes used in Si-based technology can be adapted to SiC. So far, atomic force microscopy (AFM) has been extensively used to study the surface charges, dielectric constants and electrical potential distribution as well as topography in silicon-based device structures, whereas it has rarely been applied to SiC-based structures. In this work, we investigated that the local oxide growth on SiC under various conditions and demonstrated that an increased (up to ~100 nN) tip loading force (LF) on highly-doped SiC can lead a direct oxide growth (up to few tens of nm) on 4H-SiC. In addition, the surface potential and topography distributions of nano-scale patterned structures on SiC were measured at a nanometer-scale resolution using a scanning kelvin probe force microscopy (SKPM) with a non-contact mode AFM. The measured results were calibrated using a Pt-coated tip. It is assumed that the atomically resolved surface potential difference does not originate from the intrinsic work function of the materials but reflects the local electron density on the surface. It was found that the work function of the nano-scale patterned on SiC was higher than that of original SiC surface. The results confirm the concept of the work function and the barrier heights of oxide structures/SiC structures.
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Silicon nano-structures have great potential in bionic sensor applications. Atomic force microscopy (AFM) anodic oxidation have many advantages for the nanostructure fabrication, such as simple process in atmosphere at room temperature, compatibility with conventional Si process. In this work, we fabricated simple FET structures with channel width W~ 10nm (nanowire) and
$1{\mu}m$ (nano-ribbon) on ~10, 20 and 100nm-thinned silicon-on-insulator (SOI) wafers in order to investigate the surface effect on the transport characteristics of nano-channel. For further quantitative analysis, we carried out the 2D numerical simulations to investigate the effect of channel surface states on the carrier distribution behavior inside the channel. The simulated 2D cross-sectional structures of fabricated devices had channel heights of H ~ 10, 20, and 100nm, widths of L ~$1{\mu}m$ and 10nm respectively, where we simultaneously varied the channel surface charge density from$1{\times}10^{-9}$ to$1{\times}10^{-7}C/cm2$ . It has been shown that the side-wall charge of nanowire channel mainly affect the I-V characteristics and this was confirmed by the 2D numerical simulations. -
The electrical characteristics of tunnel barrier engineered charge trap flash (TBE-CTF) memory with
$SiO_2/Si_3N_4/SiO_2/Si$ engineered tunnel barrier,$HfO_2$ charge trap layer and$Al_2O_3$ blocking oxide layer (MAHONOS) were investigated. The energy bad diagram was designed by using the quantum-mechanical tunnel model (QM) and then the CTF memory devices were fabricated. As a result, the best thickness combination of MAHONOS is confirmed. Moreover, not enhanced P/E speed (Program: about$10^6$ times) (Erase: about$10^4$ times) but also enhanced retention and endurance characteristics are represented. -
Capacitorless one transistor dynamic random access memory (1T-DRAM) cells were fabricated on the fully depleted strained-silicon-on-insulator (FD sSOI) and the effects of silicon back interface state on buried oxide (BOX) layer on the memory properties were evaluated. As a result, the fabricated 1T-DRAM cells showed superior electrical characteristics and a large sensing current margin (
${\Delta}I_s$ ) between "1" state and "0" state. The back interface of SOI based capacitorless 1T-DRAM memory cell plays an important role on the memory performance. As the back interface properties were degraded by increase rapid thermal annealing (RTA) process, the performance of 1T-DRAM was also degraded. On the other hand, the properties of back interface and the performance of 1T-DRAM were considerably improved by post RTA annealing process at$450^{\circ}C$ for 30 min in a 2%$H_2/N_2$ ambient. -
In this work, we describe a method to fabricate the Pt-silicided SB-MOSFETs with a n-type Silicon-On-Insulator (SOI) substrate as an active layer and demonstrate their electrical and structural properties. The fabricated SB-MOSFETs have novel structure and metal gate without sidewall. The gate oxide with a thickness of 7 nm was deposited by sputtering. Also, this fabrication processes were carried out below
$500^{\circ}C$ . As a result, Subthreshold swing value and on/off ratio of Fabricated SB MOSFETs was 70 [mV/dec] and$10^8$ . -
박막태양전지는 p-i-n substrate형과 n-i-p substrate형 두가지구조로 제조된다. 각 layer에서 activation energy와 band gap energy를 ASA simulator를 통해 조절해보았다. Simulation결과 p-i-n substrate형에서 p-layer와 n-i-p substrate형 n-layer에서 동일하게 activation energy 0.2eV, band gap energy 1.80eV에 최고효율 나왔고 각각 10.07%, 10.17%의 최고효율을 구할 수 있었다. 최적화 과정을 통하여 같은 조건에서 p-i-n substrate형 보다 n-i-p substrate형이 보다 높은 효율을 낸다는 것을 알 수 있었으며 본 연구를 통해 각 구조의 차이를 알 수 있었고 이는 높은 효율의 박막태양전지 설계에 도움이 될 것 이다.
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Wafer thickness of crystalline silicon is an important factor which decides a price of solar cell. PC1D was used to fix a condition that is required to get a high efficiency in a crystalline silicon solar cell using thin wafer(
$150{\mu}m$ ). In this simulation, base resistivity and emitter doping concentration were used as variables. As a result of the simulation,$V_{oc}$ =0.6338(V),$I_{sc}$ =5.565(A),$P_{max}$ =2.674(W), FF=0.76 and efficiency 17.516(%) were obtained when emitter doping concentration is$5{\times}10^{20}cm^{-3}$ , depth factor is 0.04 and sheet resistance is$79.76{\Omega}/square$ . -
We fabricated p-channel TFTs based on poly Silicon. The 35nm thickness silicon dioxide layer structure got higher
$I_{on}/I_{off}$ ratio, field-effect Mobility and output current than 10nm thickness. And 35nm layer showed low leakage current and threshold voltage. So, 35nm thickness silicon dioxide layer TFTs are faster reaction speed and lower power consumption than 10nm thickness. -
The electrical characteristic of the conventional self-aligned polycrystalline silicon (poly-Si) TFTs are known to present several undesired effects such as large leakage current, kink effect and hot-carrier effects. In this paper, LTPS TFTs with different GOLDD length were fabricated and investigated the effect of the GOLDD. GOLDD length of 1, 1.5 and
$2{\mu}m$ were used, while the thickness of the gate dielectrics($SiN_x/SiO_2$ ) was fixed at 65nm(40nm/25nm). The electrical characteristics show that the kink effect is reduced at the LTPS TFTs, and degradation from the hot-carrier effect was also decreased by increasing GOLDD length. -
We utilized atomic layer deposition (ALD) for the growth of the ZnO channel layers in the oxide thin-film-transistors (TFTs) with a bottom-gate structure using a
$SiO_2/p-Si$ substrate. For fundamental study, the effect of the channel thickness and thermal treatment on the TFT performance was investigated. The growth modes for the ALD grown ZnO layer changed from island growth to layer-by-layer growth at thicknesses of > 7.5 nm with highly resistive properties. A channel thickness of 17 nm resulted in the good TFT behavior with an onloff current ratio of >$10^6$ and a field effect mobility of 2.9 without the need for thermal annealing. However, further increases in the channel thickness resulted in a deterioration of the TFT performance or no saturation. The ALD grown ZnO layers showed reduced electrical resistivity and carrier density after thermal treatment in oxygen. -
To make up for the disadvantages of PVA gate, we blend PVP(20% wt) with PVA(5% wt) as a gate material. The best ratio for the mixture was 5:5, PVP-PVA blended gate used MIM structure showed better performance in leakage current and capacitance. PVP-PVA blended gate was fabricated by spin-coating process and pentacene was used as an organic TFT channel layer by thermal evaporation. Overall OTFT performance has also increased as PVP-PVA blended gate has relatively lower leakage current and higher capacitance than pure PVA gate has.
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Organic TFT(OTFT)에서 중요시되는 게이트 절연막을 개선 하고자 본 연구에서는 게이트 절연막에 대한 전기적 분석을 하였다.OTFT의 절연막으로 널리 연구되고 있는 PVP를 포함한 다른 2개의 polymer, PMMA, PVA에 OTS 코팅을 하였다. MIM구조의, OTS 코팅이 되지 않은 각 polymer가 증착된 그룹과 OTS 코팅을 한 polymer그룹에 대하여 전기적 및 표면특성을 비교 분석하였다. 그 결과, 모든 polymer의 표면특성이 향상되었으나, 전기적인 특성에 대한 향상 정도는 polymer 마다 차이를 보였다. 특히, PMMA는 OTS와 정확성이 좋지 않아 증착된 절연막 전체가 분리가 되어 전기적 특성에 대해서는 불안정한 결과를 보였으며, OTS가 코팅된 다른 폴리머, PVP, PVA에서는 표면특성의 향상과 더불어 향상된 전기적 특성을 얻을 수 있었다.
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Fault detection is necessary for yield enhancement and cost reduction in semiconductor manufacturing. Sensory data acquired from the semiconductor processing tool is too large to analyze for the purpose of fault detection and classification(FDC). We studied the techniques of fault detection using statistical method. Multiple regression analysis smoothly detected faults and can be easy made a model. For real-time and fast computing time, the huge data was analyzed by each step. We also considered interaction and critical factors in tool parameters and process.
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This paper describes the formation of porous 3C-SiC by anodization. 3C-SiC thin films were deposited on p-type Si(100) substrates by APCVD using HMDS (Hexamethyildisilane:
$Si_2(CH_3)_6$ ). UV-LED(380 nm) was used as a light source. The surface morphology was observed by SEM and the pore size was increased with increase of current density. Pore diameter of 70 ~ 90 nm was achieved at 7.1$mA/cm^2$ current density and 90 sec anodization time. FT-IR was conducted for chemical bonding of thin film and porous 3C-SiC. The Si-H bonding was observed in porous 3C-SiC around wavenumber 2100$cm^{-1}$ . PL shows the band gap enegry of thin film (2.5 eV) and porous 3C-SiC (2.7 eV). -
The photoconductive
$AgGaSe_2$ (AGS) layers were grown by the hot wall epitaxy method. The AGS layer was confirmed to be the epitaxially grown layer along the <112> direction onto the GaAs(100) substrate. The band-gap variation as a function of temperature on AGS was well fitted by$E_8(T)=1.9501-8.37{\times}10^{-4}T^2/(T+224)$ . The band-gap energy of AGS obtained at 293 K was determined to be 1.8111 eV. -
The photoconductive
$CdGa_2Se4$ layer has been investigated using photocurrent (PC) spectroscopy as a function of temperature. Three peaks corresponding to the band-to-band transitions were observed in the PC spectra for all temperature ranges. Also, contrary to our expectation, the PC intensities decreased with decreasing temperatures. From the relation of log$J_{ph}$ vs 1/T, where$J_{ph}$ is the PC density, two dominant levels by the exponential variation of the PC with varying temperature were observed, one at high temperatures and the other at low temperatures. -
최근 빠른 동작속도와 고 집적도를 얻기 위해 metal oxide semiconductor field effect transistor (MOSFET) 의 크기는 계속 해서 줄어들고 있다. 동시에 게이트의 절연층도 얇아지게 된다. 절연층으로 사용되는
$SiO_2$ 의 두께가 2nm 이하로 얇아 지게 되면 터널링에 의해 누설 전류가 발생하게 된다. 이 문제를 해결하기 위해$SiO_2$ 를 대체할 고유전체 물질의 연구가 활발하다. 고유전체 물질 중에는$ZrO_2,\;Al_2O_3,\;HfO_2$ 등이 많이 연구 되어 왔다. 하지만 유전상수 이외에 band gap energy, thermodynamic stability, recrystallization temperature 등의 특성이 좋지 않아 대체 물질로 문제점이 있다. 이를 보안하기 위해 산화물을 합금과 결합시키면 서로의 장점들이 합쳐져 기준들을 만족하는 물질을 만들 수 있고$HfAlO_3$ 가 그 중 하나이다. Al를 첨가하는 이유는 문턱전압을 낮추기 위해서다.$HfAlO_3$ 는 유전상수 18.2, band gap energy 6.5 eV, recrystallization temperature 800$^{\circ}C$ 이고 열역학적 특성이 안정적이다. 게이트 절연층은 전극과 기판사이에 적층구조를 이루고 있어 이방성인 드라이 에칭이 필요하고 공정 중 마스크물질과의 선택비가 높아야한다. 본 연구는$HfAlO_3$ 박막을$BCl_3/Ar,\;N_2/BCl_3/Ar$ 유도결합 플라즈마를 이용해 식각했다. 베이스 조건은 RF Power 500 W, DC-bias -100 V, 공정압력 15 mTorr, 기판온도 40$^{\circ}C$ 이다. 가스비율, RF Power, DC-bias, 공정 압력에 의한 마스크물질과 의 선택비를 알아보았다. -
카메라 모듈용 적외선 차단 필터를 설계하고 이온빔 증착 장비를 이용한 코팅 공정 후 특성을 조사하였다. 코팅 실험에 앞서 Macleod 프로그램을 이용하여 640nm 차단 필터를 설계하였으며, 실험은 Ion-Assisted Deposition 장비를 사용하여
$TiO_2/SiO_2$ 유전층을 다층 박막으로 증착하였다. 투과도 분석에서 640nm 차단 필터는 설계 곡선과 약 8nm 이내에서 일치하였으며, 갓 성장된 박막 투과도는 400~600nm에서 약 80% 이었으며, 급속열처리 및 열처리 후 약 5% 증가된 투과도를 보였다. 표면거칠기 또한 감소하였다. 따라서 열처리로 인한 재결정화 및 결함감소에 의해 필터특성이 향상되었음을 알 수 있었다. -
In this paper, the plasma doping is performed on p-type wafers using
$PH_3$ gas(10 %) diluted with He gas(90 %). The wafer is placed in the plasma generated with 200 W and a negative DC bias (1 kV) is applied to the substrate for 60 sec under no substrate heating. the flow rate of the diluted$PH_3$ gas and the process pressure are 100 sccm and 10 mTorr, respectively. In order to diffuse and activate the dopant, annealing process such as rapid thermal annealing (RTA) is performed. RTA process is performed either in$N_2$ ,$O_2$ or$O_2+N_2$ ambient at$900{\sim}950^{\circ}C$ for 10 sec. The sheet resistance is measured using four point probe. The shallow n+/p doping profiles are investigated using secondary ion mass spectromtry (SIMS). The analysis of crystalline defect is also done using transmission electron microscopy (TEM) and double crystal X-ray diffraction (DXRD). -
In this paper, we proposed GaN trench Static Induction Transistor(SIT). Because The compound semiconductor had superior thermal characteristics, GaN and SiC power devices is next generation power semiconductor devices. We carried out modeling of GaN SIT with 2-D device and process simulator. As a result of modeling, we obtained 340V breakdown voltage. The channel thickness was 3um and the channel doping concentration is 1e17cm-3. And we carried out thermal characteristics, too.
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In this work, we demonstrate the modelling and simulation of the AlGaAs/GaAs quantum-well based light emitting transistor(LET). Based on the experimental and theoretical model, we have compared between a heterojunction bipolar transistor(HBT) structure with quantum wells in the base region and a HBT without quantum wells in the base region. For the purpose of optimizing device design, several analytic and numerical studies have been presented.
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Charge trap flash memory devices with modified tunneling barriers were fabricated using the tunneling barrier engineering technique. Variable oxide thickness (VARIOT) barrier and CRESTED barrier consisting of thin
$SiO_2$ and$Si_3N_4$ dielectric layers were used as engineered tunneling barriers. The VARIOT type tunneling barrier composed of oxide-nitride-oxide (ONO) layers revealed reliable electrical characteristics; long retention time and superior endurance. On the other hand, the CRESTED tunneling barrier composed of nitride-oxide-nitride (NON) layers showed degraded retention and endurance characteristics. It is found that the degradation of NON barrier is associated with the increase of interface state density at tunneling barrier/silicon channel by programming and erasing (P/E) stress. -
AFM anodic oxidation has the capability of patterning complex nano-patterns under relatively high speeds and low voltage. We report the fabrication using a atomic force microscopy (AFM) of silicon nano-ribbon and nano-field effect transistors (FETs). The fabricated nano-patterns have great potential characteristics in various fields due to their interesting electronic, optical and other profiles. The results shows that oxide width and the separation between the oxide patterns can be optimally controlled. The subsequently fabricated silicon nano-ribbon and nano-FET working devices were controled by various tip-sample bias-voltages and scan speed of AFM anodic oxidation. The results may be applied for highly integration circuits and sensitive optical sensor applications.
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Silicon Carbide (SiC) is a material with a wide bandgap (3.26eV), a high critical electric field (~2.3MV/cm), a and a high bulk electron mobility (
${\sim}900cm^2/Vs$ ). These electronic properties allow high breakdown voltage, high frequency, and high temperature operation compared to Silicon devices. Although various SiC DMOSFET structures have been reported so far for optimizing performances. the effect of channel dimension on the switching performance of SiC DMOSFETs has not been extensively examined. In this paper, we report the effect of the interface states ($Q_s$ ) on the transient characteristics of SiC DMOSFETs. The key design parameters for SiC DMOSFETs have been optimized and a physics-based two-dimensional (2-D) mixed device and circuit simulator by Silvaco Inc. has been used to understand the relationship with the switching characteristics. To investigate transient characteristic of the device, mixed-mode simulation has been performed, where the solution of the basic transport equations for the 2-D device structures is directly embedded into the solution procedure for the circuit equations. The result is a low-loss transient characteristic at low$Q_s$ . Based on the simulation results, the DMOSFETs exhibit the turn-on time of 10ns at short channel and 9ns at without the interface charges. By reducing$SiO_2/SiC$ interface charge, power losses and switching time also decreases, primarily due to the lowered channel mobilities. As high density interface states can result in increased carrier trapping, or recombination centers or scattering sites. Therefore, the quality of$SiO_2/SiC$ interfaces is important for both static and transient properties of SiC MOSFET devices. -
In this study, we fabricated the engineered
$SiO_2/Si_3N_4/SiO_2$ (ONO) tunnel barrier with high-k$HfO_2$ trapping layer for application high performance flash MLC(Multi Level Cell). As a result, memory device show low operation voltage and stable memory characteristics with large memory window. Therefore, the engineered tunnel barrier with ONO stacks were useful structure would be effective method for high-integrated MLC memory applications. -
Programmable Metallization Cell (PMC) is a memory device based on the electrolytical characteristic of chalcogenide materials. We investigated the nature of thin films formed by photo doping of Cu ions into chalcogenide materials for use in solid electrolyte of PMC. We were able to do more economical approach by using copper which play an electrolyte ions role. The results imply that a Cu-rich phase separates owing to the reaction of Cu with free atoms from chalcogenide materials.
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gate로 ITO가 150nm의 두께로 coating된 Glass위에 절연막인 SiNx를 각각
$150^{\circ}C$ 와$200^{\circ}C$ 로 RTA한 후 channel layer 로 IGZO를 sputtering 하였다. 그 후 전극으로 Al을 evaporation 하였고 이렇게 만든 소자의 I-V 특성과 Transfer 분석을 통해 mobility, Threshold voltage등의 변화를 관찰하여 Insulator의 열처리가 IGZO TFT의 특성에 어떠한 효과를 주는지 분석하였다. -
The efficiency of CMOS technology has been developed in uniform rate. However, there was a limitation of reducing the thickness of Gate-oxide since the thickness of Gate Dielectric is also reduced so an amount of leakage current is grow. In order to solve this problem, the semiconductor device which has a dual gate is used widely. This paper presents a method and a necessity for making the Gate Stack of TFT. Before Using test devices to measure values, stacking
$SiN_x$ on a wafer test was conducted. -
기존의 박막 실리콘 태양전지는 TCO와 p-layer 사이의 Bandgap차이가 p-layer, i-layer, n-layer 사이의 Bandgap 차이보다 커서 TCO를 통과한 태양광이 p-layer에 흡수되기 전에 일정량 손실된다. 이를 해결하기 위하여, p-layer 위에 기존의 p-layer보다 높은 Bandgap을 갖는 p buffer layer가 추가된 박막 실리콘 태양전지 구조를 만들어서 흡수되는 태양광의 손실량을 줄이고, 변환효율을 높이고자 하였다. 실험은 ASA Simulator를 이용하여 진행하였으며, Simulation결과 1.92eV의 Bandgap을 갖는 p buffer layer의 추가로 인하여, 기존 10.64%에서 11.16%로 증가된 변환효율을 얻을 수 있었다. Bandgap뿐만 아니라 다른 요소의 최적화도 이루어진다면, 기존의 박막 실리콘 태양전지보다 훨씬 높은 변환효율을 갖는 박막 실리콘 태양전지를 설계 하는 것이 가능 할 것이다.
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P-type SGS-TFTs with 10
${\mu}m$ channel length and two channel widths;$W_1=5{\mu}m$ and$W_2=10{\mu}m$ which has gate insulator made of 20nm$SiO_2$ and 80nm SiNx was fabricated and the electrical properties of them were measured. The field-effect mobility was increased from 95.84 to 104.19$cm^2/V-s$ and threshold voltage also increased from -0.802 V to -0.954 V, when channel width is increased from5${\mu}m$ to 10${\mu}m$ . Subthreshold swing decreased from 0.418 to 0.343 V/dec and$I_{on/off}$ ratio increased from$4.77{\times}10^7$ to$7.30{\times}10^7$ . -
Electrical properties of SGS-TFT with 5/5
${\mu}m$ channel width and length which gate insulator is made of 20nm$SiO_2$ and 80nm$SiN_x$ was fabricated and measured at various temperatures. The field-effect mobility was decreased from 86.25 to 80.42$cm^2/Vs$ and threshold voltage also decreased from -1.5792 to -1.0492 V, when temperature is increased from room temperature to$100^{\circ}C$ . Subthreshold swing, also, increased from 0.3212 to 0.4818 V/dec and$I_{on/off}$ ratio decreased from$5.05{\times}10^7$ to$6.93{\times}10^5$ . -
Many researchers have been studied as active and transparent electrode using ZnO (Zinc oxide) inorganic semiconductor material due to their good properties such as wide band-gap and high electrical properties compared with amorphous-Si. In this study, we fabricated ZnO films by the RF magnetron sputtering method at a low temperature for a channel layer in thin-film transistor (TFT) and investigated the characteristics of sputtered ZnO films. Also, the electrical properties of TFT using ZnO channel layer such as field effect mobility(
${\mu}$ ), threshold voltage ($V_{th}$ ), and$I_{on/off}$ ratio are investigated for the application of the display and electronic devices. -
As the advanced packaging technology developing, Copper electro-plating processing has be wildly utilized in the semiconductor interconnect technique. Chemical solution monitoring methods, including PH and gravity measurement exist in industry, but economical and practical real-time monitoring has not been achieved yet. Red-green-blue (RGB) color sensor can successfully monitor the condition of
$CuSO_4$ solution during electric copper plating process. Comparing the intensity variations of the RGB data and optical spectroscopy data, strong correlation between two in-situ sensors have shown. -
High temperature silicon carbide Schottky diode was fabricated with Au deposited on poly 3C-SiC thin film grown on p-type Si(100) using atmospheric pressure chemical vapor deposition. The charge transport mechanism of the diode was studied in the temperature range of 300 K to 550 K. The forward and reverse bias currents of the diode increase strongly with temperature and diode shows a non-ideal behavior due to the series resistance and the interface states associated with 3C-SiC. The charge transport mechanism is a temperature activated process, in which, the electrons passes over of the low barriers and in turn, diode has a large ideality factor. The charge transport mechanism of the diode was analyzed by a Gaussian distribution of the Schottky barrier heights due to the Schottky barrier inhomogeneities at the metal-semiconductor interface and the mean barrier height and zero-bias standard deviation values for the diode was found to be 1.82 eV and
$s_0$ =0.233 V, respectively. The interface state density of the diode was determined using conductance-frequency and it was of order of$9.18{\times}10^{10}eV^{-1}cm^{-2}$ . -
The photoconductive
$CdGa_2Se_4$ layer was grown through the hot wall epitaxy method. From the photocurrent (PC) measurements, the three peaks in the PC spectra were associated with the band-to-band transitions. The PC intensities were observed to decrease with decreasing temperature. The valence-band splitting on$CdGa_2Se_4$ was also observed by means of the PC spectroscopy. The crystal field splitting and the spin orbit splitting turned out to be 0.1604 and 0.4179 eV at 10 K, respectively. -
Due to the scaling down of the dielectrics thickness, the leakage currents arising from electron tunneling through the dielectrics has become the major technical barrier. Thus, much works has focused on the development of high k dielectrics in both cases of memories and CMOS fields. Among the high-k materials,
$Al_2O_3$ considered as good candidate has been attracting much attentions, which own some good properties as high dielectric constant k value (~9), a high bandgap (~2eV) and elevated crystallization temperature, etc. Due to the easy control of ion energy and flux, low ownership and simple structure of the inductively coupled plasma (ICP), we chose it for high-density plasma in our study. And the$BCl_3$ was included in the gas due to the effective extraction of oxygen in the form of BClxOy compound. In this study, the etch characteristic of ALD deposited$Al_2O_3$ thin film was investigated in$BCl_3/N_2$ plasma. The experiment were performed by comparing etch rates and selectivity of$Al_2O_3$ over$SiO_2$ as functions of the input plasma parameters such as gas mixing ratio, DC-bias voltage and RF power and process pressure. The maximum etch rate was obtained under 15 mTorr process perssure, 700 W RF power,$BCl_3$ (6 sccm)/$N_2$ (14 sccm) plasma, and the highest etch selectivity was 1.9. We used the x-ray photoelectron spectroscopy (XPS) to investigate the chemical reactions on the etched surface. The Auger electron spectroscopy (AES) was used for elemental analysis of etched surface. -
최근 디스플레이 산업의 발달로 LCD 판넬의 수요가 급증함에 따라 검사장치 분야도 동반 성장하고 있다. LCD 검사를 위한 probe unit은 미세전기기계시스템 (MEMS) 공정을 이용하여 제작된다. 본 연구에서는 probe card의 미세 슬릿을 제작하기 위한 Si 깊은 식각 공정을 수행하였다. 공정에 사용된 장비는 STS 사의 D-RIE 시스템으로 식각가스로
$SF_6$ , passivation용으로$C_4F_8$ 가스를 각각 사용하였다. 식각용 마스크는$30{\sim}50{\mu}m$ 의 선폭을 probe card의 패턴에 따라 제작되었으며, 분석은 SEM 측정을 이용하였다. 식각 공정 중 발생하는 scallop은 시료를 oxidation 시켜$SiO_2$ 층을 형성한 후에 식각용액에 에칭하여 제거하였다. 제거전 scallop의 크기는 약 120 nm에서 제거후 약$50{\mu}m$ 로 크게 개선됨을 SEM 사진으로 확인하였다. -
Al이 doping된 ZnO 투명전도막을 fusion 1737 기판위에 Sol- Gel법으로 제조하였다. 제조된 Sol은 48시간 이상 숙성하여 안정화 시킨 다음, 박막을 제조하여 doping한 Al의 at%에 따른 박막의 전기, 광학적 특성을 조사하였다. XRD 측정 결과 순수한 ZnO Sol로 제조된 박막의 경우보다 0.75at%의 Al을 첨가하였을 때 가장 강한 peak intensity를 얻을 수 있었으며, 또한 0.75at% 첨가 시 순수한 ZnO 투명전도막보다 3~4order 정도 낮은 비저항을 나타내었다. 광투과율은 Al의 첨가량에 관계없이 90%를 넘는 높은 값을 나타내었다.
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In this paper, we proposed 2500V Non punch-through(NPT) Insulated gate bipolar transistor(IGBT) for high voltage industry application. we carried out optimal simulation for high efficiency of 2500V NPT IGBT according to size of device. In results, we obtaind design parameter with 375um n-drift thickness, 15um gate length, and 8um emitter windows. After we simulate with optimal parameter, we obtained 2840V breakdown voltage and 3.4V Vce,sat. These design and process parameter will be used designing of more 2000V NPT IGBT devices.
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This paper describes a simple, on-chip CMOS compatible the thin-film inductor applied for the dc-dc converters. A fully CMOS-compatible thin-film inductor with a bottom NiFe core is integrated with the DC-DC converter circuit on the same chip. By eliminating ineffective top magnetic layer, very simple process integration was achieved. Fabricated monolithic thin film inductor showed fairly high inductance of 2.2
${\mu}H$ and Q factor of 11.2 at 5MHz. When the DC-DC converter operated at$V_{in}=3.3V$ and 5MHz frequency, it showed output voltage$V_{out}=8.0V$ , and corresponding power efficiency was 85%. -
본 연구에서는 Photoconductor materials 기반의 평판형 X-ray Detector film 제작에 관한 연구를 수행하였다. 기존의 광도전성 물질로 사용되어 오던 비정질 셀레늄(Amorphous seleinum; a-Se) 기반의 디지털 방사선 검출기 보다 높은 신호 및 동작 특성을 가지는 Mercury Iodide(HgI2)와 열적, 전기적 특성이 안정적이며, 소자의 동작특성이 우수한 Lead Oxide(PbO) 기반의 X-ray Detector film의 개발에 있어서 각각 HgI2 및 PbO 두 물질 층을 적정비율에 맞추어 제작함으로써 최적의 X-ray Detector를 구현하고자 하였다. 이는 빠른 영상획득을 통해 기존의 방식이 가지는 문제점을 해결하고 의료기기 디지털화를 구현할 수 있는 차세대 시스템을 개발하고자 하는 것이다. 본 연구에서는 기존의 진공증착법의 두꺼운 대면적 필름의 제조가 어려운 문제점을 해결하고자 Particle In Binder method(PIB) 방법을 이용하여
$3"{\times}3"$ 사이즈의 두께$200{\mu}m$ 의 다결정의 Photoconductor 필름을 제조하여 전기적 특성을 평가하였다. 제작된 필름의 전기적 특성을 dark current, X-선 sensitivity와 SNR(Signal to -Noise Rate) 등을 측정하여 정량적으로 평가 하였다. 기준 실험으로 진행한 DG 2.1 바인더를 사용한 single-HgI2 층에서 보다 높은 sensitivity 값을 보였지만 높은 dark current로 인해 SNR이 떨어지는 결과를 볼 수 있었다. 본 연구에서 제시하는 두 Photoconductor material의 Soaking method를 이용한 실험에서는 single-HgI2에 해당하는 높은 sensitivity 및 저감된 dark current로 인해 높은 SNR 값을 획득하였다. 하지만 습도와 같은 주변 환경에 의한 재현성 문제로 인한 신호값의 불안정성에 대한 문제점도 남아 있으므로, 차후 최적화된 material 제작 공정을 위한 연구가 꾸준히 진행 되어져야 할 것이다. -
In this paper, electrical properties in
$ZrO_2$ -based high-k metal MIM capacitors were studied. Linear voltage coefficient of capacitance (VCC) was 72.375 ppm/V, quadratic VCC was$174.581ppm/V^2$ , temperature coefficients of capacitance was$111.01ppm/^{\circ}C$ at 100kHz and$89.497ppm/^{\circ}C$ at 1MHz, which indicate the temperature dependence of electrical parameter for MIM capacitors. -
The ArF PR mask was. developed to overcome the limit. of sub 40nm patterning technology with KrF PR. But ArF PR difficult to meet the required PR selectivity by thin PR thickness. So need to the multi-stack mask such as amorphous carbon layer (ACL). Generally capacitively coupled plasma (CCP) etcher difficult to make the high density plasma and inductively coupled plasma (ICP) type etcher is more suitable for multi stack mask etching. Hybrid Coupled Plasma source (HCPs) etcher using the 13.56MHz RF power for ICP source and 2MHz and 27.12MHz for bias power was adopted to improve the process capability and controllability of ion density and energy independently. In the study, the oxide trench which has the multi stack layer process was investigated with the HCPs etcher (iGeminus-600 model DMS Corporation). The results were analyzed by scanning electron microscope (SEM) and it was found that etching characteristic of oxide trench profile depend on the multi-stack mask.
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In this study, in order to develop lead-free share-mode ultrasonic motor, finite element method(FEM) simulation were executed using ATILA simulator and their results were investigated. Share mode ultrasonic motor models are made up stator and two ceramic disks and it simulated according to the different ceramic disk dimensions. The results shows optimum ceramic disk dimensions and design.
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PZT세라믹스는 높은 압전특성과 우수한 큐리온도(
$400^{\circ}C$ )를 보유하고 있어 오래시간에 걸쳐 주목받고 있다. 현재 압전변압기, 액츄에이터, 센서등의 압전소자는 PZT를 이용하여 제작하고 있지만 PZT는 고온 소결시 PbO의 휘발이 환경오염을 초래하며 인체의 유해하다는 연구결과가 나왔다. 이에 최근에는 PbO가 포함 되지않은 무연(lead-free)계 압전세라믹스가 주목받고 있다. 무연 압전 세라믹스의 종류로는 Bi-layer-structured ceramics, Bi-perovskite type ceramics, NKN base ceramics 가 존재하고 있다. 그 중$(Na_{0.5}K_{0.5})NbO_3(NKN)$ 세라믹스는 높은 큐리온도와($400^{\circ}C$ )와 높은 전기기계 결합계수(약 36%)를 보유하고 있어 많은 연구가 이루어 지고 있다. 하지만 NKN은 PZT에 비하여 치밀성이 낮으며 일반적인 산화물 소결방법으로는 밀도를 높이기가 어려운 단점이 존재한다. 이를 개선하기 위한 방법으로 hot pressing와 spak plasma sintering, RTGG와 같은 방법으로 밀도를 높일수 있지만 비용이 많이 들어 일반적으로 사용이 어렵다. 다른 방법으로 NKN에 첨가물을 넣는 방법을 사용하고 있는데 방법으로$LiNbO_3$ ,$LiTiO_3$ ,$LiSbO_5$ 를 첨가하여 개선하는 방법이 있다. 본 실험은 첨가물을 넣는 방식으로 비화학양론적$(Na_{0.5}K_{0.5})_{0.97}(Nb_{0.9}Ta_{0.1})O_3(NKNT)$ 조성에 CuO를 mol%로 변화주어 유전 및 압전 특성을 조사하였다. -
$Pb(Zr,Ti_O_3$ 계 세라믹스는 우수한 압전 특성으로 인하여 압전변압기 및 액츄에이터, 센서 등 많은 분야에 응용이 되어져 왔다. 그러나, 최근 들어$1000^{\circ}C$ 에서 급속도로 많은 휘발을 하는 PbO는 환경 및 인체에 나쁜 영향을 미칠 뿐 아니라 사용 후의 처리도 어려워 선진국에서는 사용을 제한하거나 줄이고 있는 추세에 있다. 따라서, PbO를 포함하지 않은 무연 (Lead-free)계 압전 세라믹스에 대한 연구가 많은 관심을 끌고 있으며 앞으로는E 장래성 있는 하나의 이슈 분야가 될 것이다. 이러한 Pb-based System 세라믹스를 대체 할 재료로서$(Bi_{1/2}Na_{1/2})TiO_3$ 나 Tungsten-Bronze type,$(K_{1/2}Na_{1/2})NbO_3$ 등이 주로 연구가 되고 있다. 특히, alkali niobate를 기초로 한$(K_{1/2}Na_{1/2})NbO_3(NKN)$ 은 무연 압전 물질로서 많은 주목을 받고 있다. 그러나, NKN의 주요 성분인 K 의 높은 조해성 때문에 일반적인 고상방법으로는 고 밀도의 세라믹을 얻기 힘들뿐더러 낮은 상전이 온도 때문에 많은 응용에는 제약이 되고 있다. 이러한 세라믹의 단점을 보완하고자 Hot forging, RTGG, SPS 등 과 같이 특수한 소결방법을 사용하여 고밀도의 세라믹을 제작하지만 이 방법들은 제품 대량 생산에 있어 경제적으로나 복잡한 제조과정을 고려할 때 매우 비효율적이라고 판단된다. 그러므로$BaTiO_3$ ,$LiTaO_3$ , Mg, Ca등을 첨가 시켜 소결을 향상시키고 고밀도를 얻기 위해 많은 연구가 진행 중이다. 따라서 본 연구에서는 Pb-based계의 세라믹스를 대체할 우수한 특성의 세라믹스를 제작하고자 기존의$(K_{1/2}Na_{1/2})NbO_3(NKN)$ 세라믹스에서 낮은 용융온도 때문에 소결하기 어려운$KNbO_3$ 를 제거한$NaNbO_3$ 에$LiNbO_3$ 와$BaTiO_3$ 를 추가한$NaLiNbO_3-BaTiO_3$ 세라믹스에$K_4CuNb_8O_{23}$ (KCN)을 첨가함으로서 이에 따른 압전 및 유전 특성을 조사하였다. -
In this study, multilayer piezoelectric ceramics was manufactured using the PMW-PNN-PZT ceramics. Then, their physical characteristics for applicaton of electric power generation were investigated according to the numbers of multilayer. With increasing the numbers of multilayer, effective electromechanical coupling factor(
$k_{eff}$ ) and capacitance were decreased and increased, respectively. -
Samples of Ta-doped in
$In_2O_3-ZnO-SnO_2$ (IZTO) with a doping level up to 4wt% were sintered at$1600^{\circ}C$ in$O_2$ . The crystal phase of the samples was identified by an X-ray diffraction experiment. apparent density and porosity with sintered temperature from$1500^{\circ}C$ to$1640^{\circ}C$ are mesured by archimedes method. For each sample, the specific resistivity was determined. samples of sintered at$1600^{\circ}C$ had the highest density and lowest porousity and The Ta 0.25-wt%-doped IZTO ceramics had the lowest resistivity. -
$BaTiO_3$ has high permittivity so that has been applied to dielectric and insulator materials in 3D system-level package integration. In order to achieve excellent performance of device, the$BaTiO_3$ layer should be highly dense. In this study,$BaTiO_3$ thick films were prepared by the inkjet printing method using 4 vol.%$BaTiO_3$ colloidal inks and cured at$28^{\circ}C$ for 5 h after infiltration of polymer resin for non-sintered process using 3 vol.% cyanate ester emulsion ink. From the obtained results. packing density was determined to be improved by overlapping rabbit ears which were generated by coffee ring effect. We also calculated the packing densities of the films and correlated these packing densities to the measured permittivity of the films. -
Hwang, Myung-Sung;Jang, Hun-Woo;Kim, Ji-Hoon;Kim, Hyo-Tae;Yoon, Young-Joon;Kim, Jong-Hee;Moon, Joo-Ho 81
Non-sintered Alumina films were fabricated via inkjet printing processes without a high temperature sintering process. The packing density of these inkjet-printed alumina films measured around 60%. Polymer resin was infiltrated thru these non-sintered films in order to fill out the 40% of voids constituting the rest of the inkjet-printed films. The concept of inkjet-printed Alumina-Resin hybrid materials was designed in order to be applicable to the ceramic package substrates for 3D-system module integration which may possibly substitute LTCC-based 3D module integration. So, the dielectric properties of these inkjet-printed$Al_2O_3$ hybridmaterialsareofourgreatinterest. We have measured dielectric constant and dissipation factor of the inkjet-printed$Al_2O_3$ -resinhybridfilmsbyvaryingtheamountofresininfiltratedthruthe$Al_2O_3$ films. -
본 연구에서는 Glass ceramic
$SiO_2-CaO-Al_2O_3$ 를 사용하여 적층형 칩 퓨즈를 제조하였다. 퓨즈의 용단 특성 및 IR특성을 개선하기 위하여 기공조제로써 Corn starch 파우더(x=5, 10, 20, 30, 40, 50wt%)를 혼합하여 기공을 형성하게 하였다. 미세구조 관찰 결과 Corn starch 파우더의 함량이 증가함에 따라 기공률이 증가하였다. 또한 전극의 선폭(x=50, 100, 150,$200{\mu}m$ )을 변화 시킴으로써 전극의 폭이 커질수록 저항값이 줄어든다는 것을 알 수가 있었다. 기공층 도입을 통하여 적층형 칩 퓨즈의 용단 특성의 개선 및 ARC 억제가 가능하였다. -
우수한 압전성을 가지는 PZT는 인체에 유해한 다량의 PbO을 함유하여 심각한 환경문제를 야기함은 물론 제조 공정 중 PbO 휘발 억제 시설 구비에 따른 경제적 부담 등 문제점이 지적되었다. 따라서 환경오염 및 가격경쟁력을 갖추기 위해 현재 무연 조성 세라믹스에 대한 많은 연구가 진행되고 있다. 최근 비납계 압전 세라믹의 연구는 비스무스 레이어형과 페로브스카이트 형 비납계 세라믹스의 연구가 활발히 진행되고 있다. 특히
$(Na,K)NbO_3$ 계는 페로브스카이트 구조를 가지는 비납계 세라믹으로 현재 많은 연구가 진행되고 있다. 이 물질은 PZT계와 유사하게 상전이(morphotropic phase boundary:MPB)영역을 가지고 있 으며 이 영역에서 높은 압전 특성을 보여주고 있다. 최근$Na_{0.5}K_{0.5}NbO_3$ 에$LiTaO_3$ 를 치환하여 우수한 압전 특성을 지니는 조성이 개발되고 있지만, 보통 소성법으로 제조된 세라믹스는 PZT계 세라믹스와 비교하여 특성이 떨어진다. 본 연구에서는 압전성이 우수한$(Na_{0.44}K_{0.52}Li_{0.44})(Nb_{0.90}Sb_{0.06}Ta_{0.04})O_3$ 조성에 도너 도핑과 억셉터 도핑을 한 다음 전기기계결합계수, 압전상수, 유전상수의 변화를 평가하고, hardener 와 softener 특성이 본조성에서 나타나는지를 관찰하였다. 실험방법은 보통 소성법을 사용하였으며, 분쇄와 혼합은 직경 3 mm zirconia ball을 사용하여 볼밀 하였다.$850^{\circ}C$ 에서 5h 하소 후$1100{\sim}1200^{\circ}C$ 에서 소결하고, 두께 1 mm로 연마한 다음 silver paste를$650^{\circ}C$ 에서 소부하여 전극을 형성하였다. 제작된 시편은$90^{\circ}C$ 의 실리콘유에서 3~4 kV/mm의 전계를 가해 20분간 분극 처리를 수행하였다. 제작된 시편의 압전전하 상수 값은 d33-meter(APC-8000)를 이용하여 측정하였고, 유전율, 전기기계결합계수 및 기계적품질계수 등은 임피던스 분석기 (impedance/gain phase analyzer)를 이용하여 특성을 측정 하였다. 또한 전압-분극 특성의 평가에는 강유전특성 측정기(ferroelectric tester: Precision-LC, Radiant Technologies, USA)를 이용하였다. -
$BaTiO_3$ 는 perovskite 구조를 가지는 대표적인 강유전체 재료로서 MLCC (Multi Layer Ceramic Capacitor), PTC thermistor등에 널리 사용되어지고 있다. 최근 고용량 MLCC의 상업화와 함께 나노크기를 갖는 tetragonal phase의$BaTiO_3$ 입자를 합성하기 위한 다양한 제조방법이 제시되고 있다. 또한 유전특성과 온도특성 및 신뢰성을 향상시키기 위해 많은 첨가제들이 연구되어지고 있다. 따라서 본 연구에서는 희토류 원소인$Y_2O_3$ 를 첨가하여 유전특성 및 온도특성을 향상시키고자 하였다. 본 실험에서는 150nm 크기를 갖는 pure$BaTiO_3$ 분말을 사용하고$Y_2O_3$ 의 양은 0.02 ~ 0.1wt%로 변수를 주어 첨가하였으며, 최적의 소결 조건을 찾기 위하여 1200, 1230,$1250^{\circ}C$ 에서 소결을 진행하였다. 실험방법으로는 균일한 혼합을 위하여 Iso-alcohol을 이용하여 48시간 ball-mill 하였으며 오븐에서 건조 후${\Phi}15$ 로 성형하여 소결을 진행하였다. 실험결과로는$Y_2O_3$ 첨가량이 0.02wt% 부터 상온부터 상전이 온도 부근의 유전율 기울기는 완만해 지는 것을 확인할 수 있었으며, 소결시편의 정방정비 (tetragonality)도 뚜렷하게 나타났다.$Y_2O_3$ 첨가랑이 0.1 wt% 일 때는 첨가량의 증가로 인해 강유전성이 상쇄됨을 나타냈다. 이는$2450^{\circ}C$ 에 이르는 매우 높은 용융온도와$2350^{\circ}C$ 까지 상전이가 는$Y_2O_3$ 를 미량 첨가할 때, 고온에서 높은 화학적 안정성과 내열성을 가져 온도 안정성이 향상된 것으로 판단된다. -
본 연구에서는 압전 세라믹과 고분자를 혼합한 복합체를 제작하고 이러한 재료로부터 발생될 수 있는 미소 전력량을 조사하였다. 압전 세라믹으로는 0.2(PbMg1/3Nb2/3O3)-0.8(PbZr0.475Ti0.525O3)와 고분자는 PVPF-TrFE (6:4)를 사용하였다. 고분자와 압전 세라믹 분율을 1%, 5%, 10%, 30%, 50%로 변화하였으며, 구조는 0-3 복합재료 및 1-3 재료를 제작하였다. 제작한 결과 0.3 복합재료에서는 분율이 10%에서 가장 큰 전력량이 발생되었고, 1-3 복합재료에서는 분율이 30%에서 최대 값을 나타내었다. 이러한 결과들을 간단한 식을 이용하여 분석을 하였다.
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The
$(Na_{0.5}K_{0.5})NbO_3-SrTiO_3$ ceramics were produced by the conventional solid-state sintering method, and their microstructure and electrical properties were investigated. All$(Na_{0.5}K_{0.5})NbO_3-SrTiO_3$ ceramic show dense and homogeneous structure without the presence of the rosette structure. The dielectric constant, loss and remanent polarization of$(Na_{0.5}K_{0.5})NbO_3-SrTiO_3$ ceramics were superior to those of single composition$(Na_{0.5}K_{0.5})NbO_3$ -
The composites were fabricated by adding 30, 40, 50, 60[vol.%] Zirconium Diboride(hereafter,
$ZrB_2$ ) powders as a second phase to Silicon Carbide(hereafter, SiC) matrix. SiC-$ZrB_2$ composites were sintered by Spark Plasma Sintering(hereafter, SPS) in argon gas atmosphere. The relative density SiC+30[vol.%]$ZrB_2$ , SiC+40[vol.%]$ZrB_2$ , SiC+50[vol.%]$ZrB_2$ and SiC+60[vol.%]$ZrB_2$ composites are 94.98[%], 99.57[%], 96.58[%] and 93.62[%] respectively. -
$BiFeO_3$ (BFO), when forming a solid solution with$BaTiO_3$ (BTO), shows structural transformations over the entire compositional range, which not only gives a way to increase structural stability and electrical resistivity but also applies a means to have better ferromagnetic ordering. In this respect, we have prepared and studied 0.7BFO-0.3BTO thin films on$Pt(111)/TiO_2/SiO_2/Si$ substrates by pulsed laser deposition. Various deposition parameters, such as deposition temperature and oxygen pressure, have been optimized to get better quality films. Based on the X-ray diffraction results, thin films were successfully deposited at the temperature of$600^{\circ}C$ and an oxygen partial pressure of 10mTorr. The dielectric, ferroelectric, and magnetic properties have then been characterized. It was found that the films deposited under lower oxygen pressure corresponded to lower leakage current. Magnetism measurement showed an induced ferromagnetism. The microstructures associated with. the magnetic and dielectric properties of this mixed-perovskite solid solutions were observed by transmission electron. microscopy, which revealed the existence of complicated ferroelectric domains, suggested that the weak spontaneous magnetization was closely associated with the decrease in the extent of rhombohedral distortion by a partial substitution of$BaTiO_3$ for$BiFeO_3$ . -
In this study, the structural characteristics and the electrical properties of
$Ag(Ta,Nb)O_3$ ceramics were investigated. Compound ceramics were fabricated by the mixed oxide method. The sintering temperature was 1200$^{\circ}C$ . The dielectric properties of$Ag(Ta,Nb)O_3$ ceramics were measured from 1 kHZ to 1 MHz. The electrical properties of$Ag(Ta,Nb)O_3$ ceramics were investigated at the various temperature ranges. -
The
$Sr_{0.7}Bi_{2.3}Nb_2O_9$ (SBN) thin films are deposited on Pt-coated electrode($Pt/Ti.SiO_2/Si$ ) using RF sputtering method. The dielectric constant of SBN thin films were increased with the increase of annealing temperature. The maximum dielectric constant of SBN thin film is obtained by annealing at 700[$^{\circ}C$ ]. The dielectric constant and dielectric loss had a stable value within -5~+5[V]. -
Piezoelectric micro-pump should contain the physical running parts like check valves for acquiring the unilateral motion of fluid from the alternating motion of actuators. But the check valves raise many problems such as abrasion or exhaustive destruction by the recursive mechanical displacement To solve these problems, we propose a novle type piezoelectric valveless micro-pump using peristaltic motion due to the traveling wave excitation. Proposed pump model is consisted of two piezoelectric ceramic plates, elastic metal body, caps for covering flow path, rubber rings for sealing tightly and disk springs for the pressurization of pump body.
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In the present study, impurities doped GxZO thin films were prepared by dc-magnetron sputtering on glass substrate and effect of processing variables on the growth behavior was investigated.
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In this study, in order to develop excellent lead-free composition ceramics for piezoelectric transformer,
$(K_{5.4}Cu_{1.3}Ta_{10}O_{29})$ added$(K_{0.5}Na_{0.5}](Nb_{0.97}Sb_{0.03})O_3$ were fabricated using conventional mixed oxide method. At the 0.9mol% KCT added specimen, electromechanical coupling factor(kp) and mechanical quality factor ($Q_m$ ) showed the optimal values of 0.437 and 727.07, respectively, for piezoelectric transformer application. -
전기 에너지를 기계적 에너지 변환하고 또한, 기계적 에너지를 전기 에너지로 변환할 수 있는 압전 세라믹스는 압전 변압기 (piezoelectric transformer), 초음파모터, 센서등과 같은 응용분야에 넓게 사용되고 있다. 특히, 압전 변압기의 설계와 제조방법에 대해서는 이미 상당히 많은 연구가 수행되어 왔다. 특히, 전원장치에 있어서는 현재 주요부품으로 사용되고 있는 권선형 변압기와 같은 전자 변환기의 대체품으로서 누설손실이 없는 압전세라믹스 소재의 특성을 이용한 압전변압기의 개발과 응용연구가 국내외적으로 활발히 진행 중이다. 하지만 지금 까지 널리 사용된 PZT계 압전 세라믹스는 환경문제에 있어서 문제점을 가지고 있다.
$1200^{\circ}C$ 이상에서 소결되는 PZT계열의 압전세라믹스 소재를 사용한 전자부품의 60~70%이상이 PbO로 구성되어 있기 때문에$1000^{\circ}C$ 부근에서 급격한 휘발특성을 보이는 PbO로 인한 환경오염문제가 대두되고 있다. 압전변압기, 초음파모터등에 사용될 수 있는 무연계 압전재료 중에 PZT 압전소자의 기능을 대체할 만한 물질로는 높은 큐리온도와 우수한 압전특성을 보이는$(Na,K)NbO_3$ 세라믹스가 가장 유력한 것으로 알려져 있다. 즉, 압전변압기용 조성 세라믹스는 높은 에너지 변환효율을 위해서 전기기계 결합계수($k_p$ )가 커야 되며, 발열에 의한 온도 상승을 억제하기 위하여 기계적 품질계수($Q_m$ )가 큰 것이 바람직하다. 또한, 높은 전류를 발생하기 위해서는 유전상수가 커, 압전변압기의 출력측 정전용량을 크게 하여야 한다. 본 연구에서는 무연계 압전세라믹스를 개발하고, 이를 이용한 전력밀도(power density)가 높은 무연계 압전변압기를 제작하여 그에 대한 전기적 특성을 조사하였다. 따라서 본 연구에서는 무연 압전변압기용 압전 세라믹스를 개발하기 위해 뛰어난 압전 및 유전특성을 가진 무연$(Na,K)NbO_3$ 계 세라믹스를 기본조성으로 하였고, KCN을 복합 첨가하여 볼 변화에 따른 미세구조, 압전 및 유전특성을 조사하고. 가장 우수한 조성으로 비납 압전변압기를 제작하여 전기적특성을 조사하였다. -
Lead-free
$(K_{0.5}Na_{0.5})(Nb_{0.96}Sb_{0.04)O_3$ + 1.2 mol%$K_4CuNb_8O_{23}$ + x mol%$Fe_2O_3$ ceramics were manufactured by a conventional solid state reaction method. And then, their piezoelectric and dielectric properties were investigated. At the 0.2 mol%$Fe_2O_3$ doped ceramics, the values of Kp=0.436 and Qm=696.36 were obtained, respectively, which were suitable for piezoelectric transformer application. -
투명전도막은 FPD의 전자부품에서 전극으로 널리 사용되고 있으며 현재 대부분의 투명전도막으로는 ITO가 사용되고 있다. 하지만, ITO에 사용되는 In은 희유금속으로 지속적인 사용량 증가로 가격의 급등과 더불어 수급 불안정으로 인해 In을 대체하고자 하는 연구가 집중적으로 이루어지고 있다. 그러나
$In_2O_3$ 를 대체한 ZnO계 등은 비저항이 높아 대체 적용이 가능하지 못하고 있다. 이에 In의 양을 줄이면서 상대적으로 저가이면서 광학적 특성이 우수한 ZnO을 첨가하여 기존의 ITO에 상응하는 전기전도도와 광투과율을 얻을 수 있는 새로운 3성분계 TCO 에 대한 연구가 활발히 이루어지고 있다. 따라서, 본 연구그룹은$In_2O_3$ 을 기본 조성으로 하는$In_2O_3-ZnO-SnO_2$ 계를 선정하여 IZTO target을 제조 후 RF magnetron sputtering 방법으로 투명전도막을 제작하였다. 본 연구에서는 RF 파워와 동작압력, 동작시간 그리고 열처리온도의 증착 조건에 따른 IZTO 박막의 특성을 평가하였다. 박막의 특성 및 표면 미세구조를 관찰하기 위해 AFM(Atomic Force Microscope)을 이용하였으며, XRD(X-ray diffraction)을 이용하여 결정성을 분석하였고, 4 point-prove, Hall effect measurement와 UV/Visible spectrometer를 통해 전기적, 광학적 특성을 평가하였다. -
산업용 온수관련용 자동차용 등의 다양한 용도로 응용이 가능한 고기능성 세라믹 히터 제작을 위해 후막공정 기술을 적용한 적층형 세라믹 히터의 수요가 증가하고 있으며, 고열로 인한 변형의 우려가 있는 내열성 기판 제작에도 적층형 HTCC 세라믹 기판 적용이 확대되고 있다. 이러한 고내열성 세라믹 기판 제작을 위해서는 paste의 균일성, Low TCR 특성 및 세라믹과 paste 매칭성 확보가 중요한 요소이다. 본 연구에서는 W/Mo 함량비를 변화시켜가며 paste를 제조하여 비저항과 TCR 특성을 비교한 후 가장 낮은 값을 나타내는 조성을 선정하였다. 이 조성에
$Al_2O_3$ ,$Ta_2O_5$ 등의 첨가제를 사용하여 비저항 특성 개선을 위한 실험을 통해 우수한 고내열성 기판용 paste 조성을 확보하고자 하였다. 그리고 이 Paste를 적용하여 HTCC 그린시트와 매칭성 조건을 확인하고자 하였다. -
본 연구에서는 금속과 Graphite로 구성된 (100-x) Fe - x Graphite (x=40, 50, 60, 70, 80 wt%) 복합체의 기계적 특성(열팽창계수, 압축강도) 및 미세구조를 조사하였다, Fe-Grphite 복합체 제조는 각각의 Fe와 graphite 분말을 건식 혼합한 후, Hot press 사용해 온도
$1100^{\circ}C$ , 압력 7ton 에서 복합체를 제조하였다. 제작된 시편은 SEM을 통하여 미세구조를 관찰하였고, Grphite 함량에 따른 열팽창계수 및 압축강도의 측정 값이 변화를 조사하였다. Graphite 함량이 증가함에 따라 열팽창계수는 감소하였으며 또한 압축강도도 감소하였다. -
Two different micro-flows during the evaporation of ink droplets were achieved by engineering both surface tension gradient and compositional gradient across the ink droplet: (1) Coffee-ring generating flow resulting from the outward flow inside the ink droplet & (2) Marangoni flow leading to the circulation flow inside the ink droplet. The surface tension gradient and the compositional gradient in the ink droplets were tailored by mixing two different solvents with difference surface tension and boiling point. In order to create the coffee-ring generating flow (outward flow), a single-solvent system using N,N-dimethylformamide with nano-sized spherical alumina particles was formulated, Marangoni flow (circulation flow) was created in the ink droplets by combining N,N-dimethylformamide and fotmamide with the spherical alumina powders as a co-solvent ink system. We have investigated the effect of these two different flows on the formation of ceramic films by inkjet printing method, The packing density of the ceramic films printed with two different ink systems (single- and co-solvent systems) and their surface roughness were characterized. The dielectric properties of these inkjet-printed ceramic films such as dielectric constant and dissipation factor were also studied in order to evaluate the feasibility of their application to the electronic ceramic package substrate.
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ZnO 바리스터는 정전기 및 순간적인 surge로부터 전자기기 및 전자회로 등을 보호하기 위해 개발된 전자 세라믹스 소재이다. 최근 전자기기 등의 고속통신 추세에 따라 ZnO 바리스터는 높은 비선형 특성과 함께 보다 낮은 유전율 및 유전손실 특성이 특별히 요구되고 있다. 따라서 본 연구에서는 현재 양산되고 있는 Bi-계와 Pr-계 ZnO 바리스터가 아닌 새로운 조성계를 이용하여 Y 첨가량(0.1~3.0 at%)에 따른 ZnO 바리스터의 전기적 특성과 유전 특성을 살펴보았다. 시편은 일반적인 세라믹 공정에 따라 제조하여
$1200^{\circ}C$ 에서 3 시간 공기 중에서 소결하였으며, 소결 및 전기적 특성과 유전 특성(밀도, 미세구조, I-V 특성, 유전율, 유전손실, ZnO grain 비저항)은 FE-SEM, Keithley237, Agilent 4294a 및 Agilent 4991a 장비를 사용하여 Y 함량에 따른 ZnO 바리스터의 특성 변화를 고찰하였다. 그 결과, Y이 2.0 at% 첨가한 계의 바리스터 특성이 가장 우수하였다. 보다 구체적으로 살펴보면 다음과 같다. Y 함량이 증가함에 따라 상대밀도는 94~96%로 증가하였으며, 평균입경은 증가하였다. 또한 유전율은 580~215 (at 1 MHz)로 Y 함량이 증가할수록 낮아졌다. 이를 통하여 새로운 바리스터 조성계에서 Y의 첨가 효과에 대하여 논하였다. -
압전 세라믹스는 진동, 변형, 압력 등의 기계적 에너지를 전기적 에너지로 혹은 전기적 에너지를 기계적 에너지로 변환시키는 소자로서의 기능을 가지며 조성의 개선 및 제조 기술의 진보가 계속되어 큰 관심을 받고 있다. 최근 audio의 고급화 및 자동차, 평면 TV, 고성능 통신기기, 디지털방송, 홈시어터 등 스피커의 성능이 크게 부각되면서 대기업에서부터 중소기업에 이르기까지 고성능 스피커의 개발에 박차를 가하고 있다. 압전 세라믹을 이용하여 음압을 변조하는 압전 스피커는 디스크 형상의 압전 프레이트를 단층 또는 다층으로 형성하여 기존의 마그네틱 스피커와는 차별되는 형태를 가진 스피커로서 응용하는 것이다. PSN-PZT계 조성을 개발하여
$d_{33}$ , 전기기계결합계수($k_p$ ), 온도안정성 및 내구성 향상 및 특성향상을 위한 입경 조절 및 공정을 연구하고자 한다. 디스크 형태의 압전 세라믹을 이용하여 2, 3, 4 layer 이상의 멀티레이어 시편을 제작하였고, 여러 시편에서 크기 및 형상, 접합 방법 등에 따른 특성을 최적화하여 스피커의 특성을 향상 시키고자 한다. -
The piezoelectric transformer have attracted a lot of interest in recent years because of their potential applications in electronic devices. However, their reliability in practical applications has not been systematically studied. For many piezoelectric materials, the temperature reliability are among the biggest concerns. This paper presents an experimental study of the piezoelectric transformers with the focus on its reliability under varying temperature conditions.
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In this study, in order to develop high power piezoelectric transformer, we compared the piezoelectric transformers dimension. The basic composition of piezoelectric ceramics is ternary
$0.01Pb(Ni_{1/3}Nb_{2/3})O_3-0.08Pb(Mn_{1/3}Nb_{2/3})O_3-0.91Pb(Zr_{0.505}Ti_{0.495})O_3$ . The voltage step up ratio of piezoelectric transformer showed the maximum value at the near of 81 kHz and increased according to the increase of load resistance. -
In this study, both structural, dielectric and piezoelectric properties of the NKN-0.96BNT-0.04BT ceramics were investigated. All samples of the NKN-0.96BNT-0.04BT ceramics were fabricated by conventional mixed oxide method with Pt electrodes. We report the improved dielectric and piezoelectric properties in the perovskite structure composed of the NKN, BNT and the BT ceramics. We investigated the effects of NKN, BT on the structural and electrical properties of the NKN-0.93BNT-0.07BT ceramics. The dielectric properties and piezoelectric properties of the NKN-0.93BNT-0.07BT ceramics were superior to those of single composition NKN, NKN-BNT and those values for the NKN-0.93BNT-0.07BT ceramics were 861 and 1.12%.
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The composites were fabricated by adding 30, 35, 40, 45[vol.%] Zirconium Diboride(hereafter,
$ZrB_2$ ) powders as a second phase to Silicon Carbide(hereafter, SiC) matrix.$SiC-ZrB_2$ composites were sintered by Spark Plasma Sintering(hereafter, SPS) in vacuum or argon gas atmosphere. The relative density of SiC+40[vol.%]$ZrB_2$ composites reveal high 99.57[%] in argon gas atmosphere and pressure 50MPa. -
Al-doped ZnO (AZO) thin films were grown on glass substrates by co-sputtering at room temperature. We made ZnO and Al target and ZnO:Al film is deposited with sputter which has two RF gun source. The Al content was controlled by varying Al RF power and effect of Al contents on the properties of ZnO:Al film was investigated. Crystallinity and orientation of the ZnO:Al films were investigated by X-ray diffraction (XRD), surface morphology of the ZnO:Al films was observed by atomic force microscope. Electrical properties of the ZnO:Al films were measured at room temperature by van der Pauw method and hall measurement. Optrical properties of ZnO:Al films were measured by UV-vis-NIR spectrometer.
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Micro pillar structure was investigated for the energy havesting applications. The micro pillar structures were investigated to find proper size of pillars. In this experiments, the aspect ratio between the height and diameter were changed to extract maximum peizoelectric coefficient. We proposed the idea and model for the energy harvesting systems based on the micro-pillar structure.
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ITO에 사용되는 주된 재료인 인듐의 bixbyite 구조는 TCOs의 전기적 특성에서 매우 중요한 것으로 알려져 있다. 때문에 인듐의 Bixbyite구조를 유지하면서 인듐의 사용량을 줄이기 위해 최적의 Solubility limit에 관해 연구하였다. 이를 위해 In2O3-ZnO-SnO2의 삼성분계 기본 조성에 두가지 물질을 추가로 첨가하여 첨가량에 따른 Solubility limit을 연구하였다. Solubility limit의 측정을 위해 X-ray Diffractometer(XRD)를 사용하였으며, 첨가 원소의 양이 증가할수록 TCOs target의 Latice parameter값은 작아졌다, SEM을 통한 미세구조의 관찰로 원소첨가에 따른 샘플의 소결에너지 변화를 분석할 수 있었다. 제작된 시편의 정성분석 및 Chemical binding Energy를 측정하기 위해 X-ray Photo Spectroscopy (XPS)를 이용하였으며, 전기적인 특성 측정을위해 4-Point prove mesurement 방법을 사용하였다.
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This paper represented driving characteristic of a thin-type ultrasonic motor by fabricating and utilizing two kinds of drivers which could generate sinusoidal wave, square wave, respectively. A thin brass plate was used as a cross shaped vibrator and sixteen ceramic plates were attached on upper and bottom side of the brass plate. From the thin stator, elliptical displacements of the four contact tips were obtained. Speed, torque, and current were measured by applying sinusoidal waves through driving equipment such as function generator, power amplifier: to measure characteristic of the motor. As a result, the speed and the torque changed linearly at either driving frequency of 88.6 ~ 87.6[kHz] or voltage of 24~36[V]. Two-drivers which generate sinusoidal waves and square waves were designed respectively, and then were compared through some experiments in order to be put to practical use. In conclusion, the drivers had similar characteristic of speed-torque at similar frequency and voltage. It was able to control the motor linearly by using the driver generating square wave among two-drivers. Besides, it also was possible to make the drivers smaller.
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Aerosol deposition method(ADM)는 상온에서 에어로졸화된 고상의 원료분말을 노즐을 통해 분사시켜 소결과정을 거치지 않고도 상온에서 고밀도 후막을 제조할 수 있는 공정으로서, 다양한 재료의 코팅이 가능하고, 코팅층의 조성 및 화학 양론비의 제어가 용이한 특징을 갖는다. 본 연구에서는 ADM을 이용하여 큰 유전상수, 압전계수, 초전계수, 탄성계수를 갖는
$BaTiO_3$ 분말을 원료로 하여 압전소자, 커패시터, 고전압용 유전체 등에 응용이 가능한 세라믹 층 형성에 관한 연구를 진행하였다. 또한$BaTiO_3$ 같은 강유전체 세라믹을 이용하여 여러 가지 소자를 제조하는 경우 소자의 미세조직에 따라 물성이 영향을 받는 것으로 확인되어져 있다. 이에 본 연구에서는 세라믹 분말보다 상대적으로 탄성이 큰 polymer 분말을 첨가하여 후막 내부의 결정립의 크기가 20 nm 의 평균 결정립을 갖는 세라믹 후막에 비해 최대 10 배 정도까지 증가하는 것을 확인할 수 있었으며, 이에 따라 후막에서의 유전율 및 유전손실율의 전기적 특성 변화를 확인할 수 있었고, 이러한 물성변화에 대한 원인 고찰을 위하여 후막의 미세구조 및 화학조성 등에 대한 다양한 분석이 이루어 졌으며, 상온에서 성막되는 후막의 세라믹 층의 응용을 위한 최적의 공정조건을 제시하고자 한다. -
In this work, we discuss simulation of surface acoustic wave device using Comsol Multiphysics. The structure SAW device based on piezoelectric thin film aluminum-nitride (AlN) on silicon was simulated. Some parameters of SAW device such as surface velocity, displacement of piezoelectric thin film were evaluated by software. Many modes and shapes of wave are also discussed in this paper. For evaluation physical parameters of AlN piezoelectric layer, the SAW resonator was modeled and simulation results were also compared with experiment results. we simulated arid evaluated the surface Rayleigh wave of AlN thin film on silicon substrate. Results simulation and experiment showed the surface velocity of AlN thin film was about 5200 m/s and shape of surface wave was also displayed. This paper has also proposed as method to study SAW characteristic of piezoelectric thin film and found out measurement values accurately of film such as stiffness matrix, piezoelectric matrix. These values are very important in calculation and design SAW device or MEMS device based on AlN piezoelectric layer.
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In this study, the effect of a long post-deposition thermal annealing(600 and 1000
$^{\circ}C$ ) on the surface acoustic wave (SAW) properties of polycrystalline (poly) aluminum-nitride (AlN) thin films grown on a 3C-SiC buffer layer was investigates. The poly-AlN thin films with a (0002) preferred orientation were deposited on the substrates by using a pulsed reactive magnetron sputtering system. Experimental results show that the texture degree of AlN thin film was reduced along the increase in annealing temperature, which caused the decrease in the electromechanical coupling coefficient ($k^2$ ). The SAW velocity also was decreased slightly by the increase in root mean square (RMS) roughness over annealing temperature. However, the residual stress in films almost was not affect by thermal annealing process due to small lattice mismatch different and similar coefficient temperature expansion (CTE) between AlN and 3C-SiC. After the AlN film annealed at 1000$^{\circ}C$ , the insertion loss of an$IDT/AlN/3C-SiC/SiO_2/Si$ structure (-16.44 dB) was reduced by 8.79 dB in comparison with that of the as-deposited film (-25.23 dB). The improvement in the insertion loss of the film was fined according to the decrease in the grain size. The characteristics of AlN thin films were also evaluated using Fourier transform-infrared spectroscopy (FT-IR) spectra and X-ray diffraction (XRD), scanning electron microscopy (SEM), and atomic force microscopy (AFM) images. -
This paper describes the characteristics of a poly 3C-SiC micro heater which was fabricated on
$AlN(0.1{\mu}m)/3C-SiC(1.0{\mu}m)$ suspended membranes by surface micro- machining technology. The 3C-SiC and AlN thin films which have wide energy bandgap and very low lattice mismatch were used sensors for high temperature and voltage environments. The 3C-SiC thin film was used as micro heaters and temperature sensor materials simultaneously. The implemented 3C-SiC RTD (resistance of temperature detector) and the power consumption of micro heaters were measured and calculated. The TCR (thermal coefficient of the resistance) of 3C-SiC RTD is about -5200$ppm/^{\circ}C$ within a temperature range from$25^{\circ}C$ to$50^{\circ}C$ and -1040$ppm/^{\circ}C$ at$500^{\circ}C$ . The micro heater generates the heat about$500^{\circ}C$ at 10.3 mW. Moreover, durability of 3C-SiC micro heaters in high voltages is better than pt micro heaters. A thermal distribution measured and simulated by IR thermovision and COMSOL is uniform on the membrane surface. -
Han, Seok-Kyu;Kim, Jung-Hyun;Hong, Soon-Ku;Lee, Jae-Wook;Lee, Jeong-Yong;Kim, Ho-Jong;Song, Jung-Hoon;Yao, Takafumi 114
ZnO has received considerable attention due to its potential applicability to optoelectronic devices such as ultraviolet-light emitting diodes (UVLEDs) and laser diodes (LDs). As well known, however, polar ZnO with the growth direction along the c-axis has spontaneous and piezoelectric polarizations that will result in decreased quantum efficiency. Recently, nonpolar ZnO has been studied to avoid such a polarization effect. In order to realize applications of nonpoar ZnO-based films to LEDs, growth of high quality alloys for quantum well structures is one of the important tasks that should be solved.$Mg_xZn_{1-x}O$ and$Cd_xZn_{1-x}O$ is ones of most promising alloys for this application because the alloys of ZnO with MgO and CdO provide a wide range of band-gap engineering spanning from 2.4 to 7.8 eV. In this study, we investigated on$Mg_xZn_{1-x}O$ films grown with various Mg/Zn flux ratios The films were grown on R-plane sapphire substrates by plasma-assisted molecular beam epitaxy (PAMBE). we investigated on$Mg_xZn_{1-x}O$ films grown with various Mg/Zn flux ratios. The films were grown on R-plane sapphire substrates by plasma-assisted molecular beam epitaxy (PAMBE). With the relatively low Mg/Zn flux ratios, a typical striated anisotropic surface morphology which was generally observed from the nonpolar (11-20) ZnO film on r-plane sapphire substrates. By increasing the Mg/Zn flux ratio, however, additional islands were appeared on the surface and finally the surface morphology was entirely changed, which was generally observed for the (0001) polar ZnO films by losing the striated morphology. Investigations by X-ray$\Theta-2{\Theta}$ diffraction revealed that (0002) and (10-11) ZnO planes are appeared in$Mg_xZn_{1-x}O$ films by increasing the Mg/Zn flux ratio. Further detailed investigation by transmission electron microscopy (TEM) and photoluminescence (PL) will be discussed. -
Kim, Jung-Hyun;Han, Seok-Kyu;Hong, Soon-Ku;Lee, Jae-Wook;Lee, Jeong-Yong;Song, Jung-Hoon;Yao, Takafumi 115
Epitaxial ZnO film was grown on Si(111) substrate with oxidazed CrN buffer by plasma-assisted molecular beam epitaxy (PAMBE). The growth and structural properties are investigated. The single crystalline growth was revealed by in-situ RHEED analysis. Crystalline quality of ZnO film grown on oxidized CrN buffer was investigated by the X-ray rocking curves. The FWHMs of (0002) XRCs was$1.379^{\circ}$ . This value was smaller than the ZnO film grown directly on (111) Si substrate. -
$TiO_2$ pastes was synthesized to obtained of high efficiency dye-sensitized solar cells using size dependent co-polymer. SBM co-polymer binder is consist of styrene, n-butyl acrylate, and methacrylic acid (SBM) monodisperse co-polymer binder materials and this$TiO_2$ pastes were applied of dye-sensitized solar cells (DSSCs). The photoanodes were characterized by ATR-Fourier Transform spectrometer, X-ray diffraction (XRD) and morphology was investigated by field emission scanning electron microscopy (FE-SEM). The photoelectrochemical properties of the thin films and the performance of DSSCs were measured by photovoltaic-current density, AC impedance and monochromatic incident photon-to-current conversion efficiency (IPCE). DSSC based on the 100nm size co-polymer binder was obtained conversion efficiency of 8.1% under irradiation of AM 1.5(100$mWcm^2$ ). -
Recently, low temperature co-fired ceramic (LTCC) technology has gained a remarkable application potential in sensors, actuators and microsystems fields. In this study, we investigated the effects of annealing treatment on the electrical properties of
$Pb(ZrTi)O_3$ (PZT) thin films deposited on LTCC substrate. The LTCC substrates with thickness of 400${\mu}m$ were fabricated by laminating 12 green tapes which consist of alumina and glass particle in an organic binder. The PZT thin films were deposited on Au/LTCC substrates by RF magnetron sputtering method. Then, the change of the crystallization of the films was investigated under various annealing temperatures. The results showed that the crystallization of the films were enhanced as increasing annealing temperatures. The film, annealed at$700^{\circ}C$ , 3min, was well crystallized in the ferovskite structure. The structural variation of the films were analyzed by using X-Ray diffraction (XRD) and field emmision scanning electron microscopy (FESEM). -
Low temperature co-fired ceramic (LTCC) is one of promising materials for MEMS structures because it has very good electrical and mechanical properties as well as possibility of making various three dimensional (3D) structures. In this work, piezoelectric pressure sensors based on hybrid LTCC technology were presented. The LTCC diaphragms with thickness of 400 um were fabricated by laminating 12 green tapes which consist of alumina and glass particle in an organic binder. The piezoelectric sensing layer consists of
$Pb(ZrTi)O_3$ (PZT) thin film deposited by RF magnetron sputtering method on between top and bottom Au electrodes. The results showed that the fabrication method is very suitable for pressure sensor applications. The PZT films deposited on LTCC diaphragms were successfully grown and were analyzed by using X-ray diffraction method (XRD) and field emission scanning electron microscope (FESEM). -
선택적 액상증착(Selective Liquid Phase Deposition)을 이용하면, 기존의 열에 의한 손상 없이 섭씨 50도 이하의 낮은 온도로 실리콘 산화물을 증착시킬 수 있다. 형성된 액상증착 실리콘 산화물은 조직이 매우 치밀하며 표면이 매우 고르게 형성됨을 확인하였다. 뿐만 아니라, 액상증착 실리콘 산화물의 누설 전류 또한 매우 낮음을 확인하였다. 또한 형성된 박막에 다양한 온도 하에서 열처리하여 산화막의 특성 변화를 관찰하였으며, 열처리 후에도 박막의 표면 거칠기나 누설전류의 변화가 미미한 것을 확인하였다. 이것은 액상증착 실리콘 산화물이 열처리 유무와 관계없이 집적회로에서 좋은 절연소재로 사용될 수 있는 가능성을 내포한다.
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Ga doped ZnO (GZO) transparent conductive films were deposited on the glass substrates at room temperature by facing target sputtering (FTS) method. The sputtering targets were 100 mm diameter disks of GZO(
$Ga_2O_3$ 3.w.t%) and Zn metal. The GZO thin films were deposited as a various$PO_2$ (oxygen gas content). Base pressure was$2{\times}10^{-6}torr$ , and a working pressure was 1mTorr. The properties of thin films on the electrical and optical properties of the deposited films were investigated by using a four-point probe (Chang-min), a Hall Effect measurement (Ecopia) and an UV/VIS spectrometer (HP). The minimum resistivity of film was$6.5{\times}10^{-4}[{\Omega}-cm]$ and the average transmittance of over 80% was seen in the visible range -
A clean and highly efficient energy production has long been sought to solve energy and environmental problems. A fuel cell energy is expected to be a key to solve the problems. The emissions of fuel cell is low, the by-product is low, the by-product is pure water. This paper shows the I-R and V-R characteristics of fuel cell which are connected in parallel and series. In addition, the voltage of the fuel cells which are connected in parallel is less than the voltage of the fuel cells which are connected in series.
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Development of renewable energy is promoted to achieve sustainability. So researchers are seeking and developing a new, clean, safe and renewable energy. Fuel cell energy and solar cell energy are expected to be one of the solutions. The emissions of fuel cell is low, the by-product is low, the by-product is only pure water. This paper presents the efficiency of the hybrid system organized with fuel cell and solar cell in faraday law.
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In our experiment, a PTFE was sputter-coated on substrates to induce water-repellent properties and the RF-magnetron sputtering method for fabrication of PTFE film is used due to the advantages of the simple process, time saving, environmentally friendly, insulating property, and a good adhesion property to substrates. As a result of the correlation between surface roughness of PTFE films and contact angle with water, we found that the roughness surfaces are proportioned to contact angles related to low interfacial energy.
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We observed the changes of crystal structure of Rubrene (5,6,11,12-tetraphenylnaphthacene) polycrystal thin films at various in situ substrate temperature and process by scanning electron microscope(SEM), x-ray diffraction (XRD) and near-field microwave microprobe (NFMM). Amorphous rubrene thin film was initially obtained on 200 nm thick
$SiO_2/Si$ substrate at 35$^{\circ}C$ in a vacuum evaporation but in situ long time postannealing at the temperature 80$^{\circ}C$ transformed the amorphous phase into crystalline. Four heating conditions are followed : (a) preheating (b) annealing (c) preheating, annealing (d) preheating, cooling(35$^{\circ}C$ ), annealing. We have obtained the largest polycrystal disk in sample (c). But the highest crytallity and conductivity of the rubrene thin films were obtained in sample (d). -
In this paper, we have investigated about MgO thin films on Si(100) substrate by RF magnetron Sputtering. MgO thin films were affected by RF input power, gas pressure, gas composition, and substrate temperatures. So, we focused on most effective RF input power in deposition condition. Thickness of MgO thin films was measured by surface profiler. And structural analysis carried out by X-ray Diffraction(XRD). physical characteristic and thickness of thin films changed with RF input power.
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X-ray high-voltage generator is the most important part that can decide the radiation exposure dose affecting a patient or operator according to the characteristic. If decrease of X-ray radiation exposure dose and output characteristic of high-voltage generator is unstable, a patient or operator must be exposed to more radiation. This study measures and analyzes the exposure dose reproducibility and output characteristic according to a change of tube current on the various rectification methods of diagnostic X-ray equipment. It can find that quality bastardize and output is increased if voltage of X-ray tube is increased. Exposure dose reproducibility according to output of X-ray equipment is extremely excellent in inverter type, and is stable in order of following three-phase, a single-phase and condenser method. This study can find that the reply incidence of high-voltage generator is generated due to difference in rectification method, noise occurs in X-ray due to that, quality of an image is decreased due to that, and medical diagnosis can be failed due to that.
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The most important part of the fabrication solar cells is the anti-reflection coating when excludes the kinds of silicon substrates (crystalline, polycrystalline, or amorphous), patterns and materials of electrodes. Anti-reflection coatings reduce the reflection of sunlight and at last increase the intensity of radiation to inside of solar cells. So, we can obtain increase of solar cell efficiency about 10% using anti-reflection coating. There are many kinds of anti-reflection film for solar cell, such as SiN,
$SiO_2$ , a-Si, and so on. And, they have two functions, anti-reflection and passivation. However such materials could not perfectly prevent reflection. So, in this work, we investigated the anti-reflection coating with the columnar structure ZnO thin film. We synthesized columnar structure ZnO film on glass substrates. The ZnO films were synthesized using a RF magnetron sputtering system with a pure (99.95%) ZnO target at room temperature. The anti-reflection coating layer was sputtered by argon and oxygen gases. The angle of target and substrate measures 0, 20, 40, 60 degrees, the working pressure 10 mtorr and the 250 W of RF power during 40 minutes. The confirm the growth mechanism of ZnO on columnar structure, the anti-reflection coating layer was observed by field emission scanning electron microscopy (FE-SEM). The optical trends were observed by UV-vis and Elleso meter. -
The effect of seed layer on the preparation of tin oxide thin film by ALD using tetrakis(ethylmethylamino) tin precursor was examined. The average growth rate of tin oxide film is about 1.4 A/cycle from
$50^{\circ}C$ to$150^{\circ}C$ . The rate rapidly decreases at the substrate temperature at$200^{\circ}C$ . The seed effect was not observed in crystal growth of thin oxide. However, the crystalline growth of seed material in tin oxide was detected by thermal annealing. ALD-grown seeded tin oxide thin film after thermal annealed was characterized by ellipsometry, XRD, AFM and XPS. -
In this paper, a tunable microstrip patch antenna designed using RF MEMS switches is reported. The design and simulation antenna were performed using high frequency structure simulator (HFSS). The antenna was designed in ISM Band and operates simultaneously at 2.4 GHz and 5.7 GHz with a -10 dB return-loss bandwidth of 20 MHz and 180 MHz, respect-tively. To obtain high efficiency and improve integrated ability, the High Resistivity Silicon (HRS) wafer was used for the antenna. The antenna achieved high gain with 8 dB at 5.7 GHzand 1.5 dB at 2.4 GHz. The RF MEMS DC contact switches was simulated and analysis by ANSYS software.
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This paper describes the temperature characteristics of polycrystalline 3C-SiC micro resonators. The 1.2
${\mu}m$ and 0.4${\mu}m$ thick polycrystalline 3C-SiC cantilever and doubly clamped beam resonators with 60 ~ 100${\mu}m$ lengths were fabricated using a surface micromachining technique. Polycrystalline 3C-SiC micro resonators were actuated by piezoelectric element and their fundamental resonance was measured by a laser vibrometer in vacuum at temperature range of$25{\sim}200^{\circ}C$ . The TCF(Temperature Coefficient of Frequency) of 60, 80 and 100${\mu}m$ long cantilever resonators were -9.79, -7.72 and -8.0$ppm/^{\circ}C$ . On the other hand, TCF of 60, 80 and 100${\mu}m$ long doubly clamped beam resonators were -15.74, -12.55 and -8.35$ppm/^{\circ}C$ . Therefore, polycrystalline 3C-SiC resonators are suitable with RF MEMS devices and bio/chemical sensor applications in harsh environments. -
This paper describes the fabrication and characteristics of polycrystalline (poly) 3C-SiC microresonators with
$3{\times}10^{17}{\sim}1{\times}10^{19}cm^{-3}$ in-situ N-doping concentrations. In this work, the crystallinity, carrier concentration and surface morphology of the grown thin films were evaluated by X-ray diffraction (XRD), scanning electron microscopy (SEM) and atomic force microscopy (AFM). The 1.2${\mu}m$ thick cantilvers and the 0.4${\mu}m$ thick doubly-clamped beam microresonators with various lengths were implemented using in-situ doping poly 3C-SiC thin films. The characteristics of the poly 3C-SiC microresonators were evaluated using quartz and a laser vibrometer under vacuum at room temperature. The resonant frequencies of the SiC microresonators decreased with doping concentrations owing to the reduction of the Young's modulus of the poly 3C-SiC thin films. It was confirmed that the resonant frequencies of the poly 3C-SiC microresonators are controllable by adjusting the doping concentrations. -
Phospho-olivine
$LiFePO_4$ cathode materials were prepared by hydrothermal reaction. In this study, Multi-walled carbon nanotube (MWCNT) and Carbon black was added to enhance the electrical conductivity of$LiFePO_4$ .$LiFePO_4$ ,$LiFePO_4$ -MWCNT and$LiFePO_4$ -C particles were characterized by X-ray diffraction (XRD), field emission scanning electron microscope (FE-SEM) transmission electron microscope (TEM).$LiFePO_4/SPE/Li$ ,$LiFePO_4$ -MWCMT/SPE/Li and$LiFePO_4$ -C/SPE/Li cells were characterized electrochemically by charge/discharge experiments at a constant current density of$0.1mA\;cm^{-2}$ in a range between 2.5 and 4.3 V vs.$Li/Li^+$ and cyclic voltammetry (CV). -
Phospho-olivine
$LiFePO_4$ and$LiTi_{0.1}Fe_{0.9}PO_4$ cathode materials were prepared by the solid-state reaction. To improve conductivity we carried out electrochemical performance of$Ti^{2+}$ doped$LiFePO_4$ . The$Ti^{2+}$ doped$LiFePO_4$ started 3.36 V of flat voltage on discharge curve and showed a gentle decline in the curve compared to undoped$LiFePO_4$ without great changes of capacity. And so, we could achieve to improve electrochemical performance as reversible, cycle life. Similarly,$LiFePO_4$ doping with$Ti^{2+}$ was showed the effect of dopant which was obtained the improved discharge capacity as 140 mAh/g and good cycling performance. -
We studied electrochemical properties of
$TiO_2$ photoelectrode based graphene for dye-sensitized solar cells(DSSC). Gaphene has good electric conductivity and it is very good transparent when this is coated on monolayer. we prepared photoelectrode by squeeze methode and researched photoelectrical properties of$TiO_2$ electrode base gaphene. DSSC based on graphene was obtained conversion efficiency of 5.4% under irradiation of AM 1.5(100$mWcm^2$ ). -
In this work we compared the electrical characteristic of single gate and dual gate in MIC-TFT. We fabricated p-channel TFTs based on MIC structure. In mobility, dual gate (
$61.35cm^2/Vsec$ ) got a higher value than single gate ($55.96cm^2/Vsec$ ). In$I_{on}/I_{off}$ dual gate ($6.94{\times}10^6$ ) got a higher value than single gate ($1.72{\times}10^6$ ) too. In$I_{off}$ , dual gate got a lower value than single gate. Therefore, dual gate is good and less power consumption than single gate. -
It is investigated the cut-off frequency of Z-cut quartz microstrip low pass filter by the variation of applied electric field. Designed microstrip filter was simulated using the Ensemble v7.0(Ansoft). As a result of the experiment, the cut-off frequency showed 50 MHz shift when the applied electric field was 3 kV/cm.
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Indium Gallium Zinc Oxide (IGZO) thin films for TFT channel were prepared by using a Facing Target Sputtering (FTS) system. To investigate the effect of oxygen on the optical and the electrical properties of amorphous InGaZnO(a-IGZO), we prepared thin films by FTS system in various oxygen atmospheres at room temperature. As-deposited IZTO thin films were investigated by using a UV/VIS spectrometer, an X-ray diffractometer, a Hall Effect measurement system, and an atomic force microscope. The quantitative analysis of the films was carried out by using the energy dispersive X-ray (EDX) technique for the as-deposited film.
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Al, Ga and In doped ZnO thin film were prepared by faing targets sputtering as a function of oxygen gas contents at R.T. Base pressure was
$2{\times}10^{-6}torr$ , and working pressure was 1mTorr. The properties of thin films on the electrical and optical properties of the deposited films were investigated by using a four-point probe (Chang-min), a Hall Effect measurement (Ecopia) and an UV/VIS spectrometer (HP). The minimum resistivities of AZO, GZO and IZO thin film were$6.5{times}10^{-4}[{\Omega}-cm],5.5{\times}10^{-4}[{\Omega}-cm]$ and$4.29{\times}10^{-4}[{\Omega}-cm]$ . The average transmittance of over 80% was seen in the visible range. -
As ideal new energy, solar cell has renewable and inexhaustible characteristics and the fuel cell only needs low maintenance and low operating cost. This paper introduces hybrid system of solar cell and fuel cell considering the advantages of stable and sustainable energy from the economic point of view. Then the paper shows the I-V characteristics of the solar module which are dependent on the power of the halogen lamp and the P-I and I-V characteristics of fuel cells which are connected in parallel and series.
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The polymer electrolyte membrane fuel cell(PEMFC) with the advantages of low-operating temperature, high current density, low cost and volume, fast start-up ability, and suitability for discontinuous operation becomes the most reasonable and attractive power system for transportation vehicle and micro-grid power plant in a household. 200W PEM-type FCs system was integrated by this study, then the electrical characteristics and diagnosis of the fuel cell were analyzed with variations on mass flow rate and stack temperature. The ranges of the variations are
$20{\sim}70^{\circ}C$ on stack temperature and 1~8L/min on$H_2$ volume. -
본 실험에서는 비평형 마그네트론 스퍼터링 (Unbalanced Magnetron Sputtering, UBMS)을 이용하여 제작된 ITO 박막의 전기적, 광학적, 구조적인 특성들에서 기판온도와 자장 변화의 영향에 대해 연구하였다.
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Bismuth-substituted yttrium iron garnet(Bi-YIG;
$Bi_xY_{3-x}Fe_5O_{12}$ , x=0, 0.5, 1.0, 1.5, 2.0) thin films were fabricated on glass substrates using a metal organic decomposition (MOD) method. The dielectric property was measured by NSMM(Near-field scanning microwave microscopy) system that operating frequency is 4 Ghz. The obtained reflection coefficient$S_{11}$ of the Bi:YIG thin films with different bismuth concentration was increased as the bismuth concentration increased due to the lattice mismatch and vacancy of ions because of a lager ionic radius of bismuth ion than yttrium ion. -
In this paper, MgO thin films were deposited on Si(100) single crystal substrates by RF magnetron sputtering. The effects of RF power, chamber atmosphere, and substrate temperature on the characteristics of MgO thin films were already studied. Thus, we focused on the working pressure. The structural properties of the films changed dramatically with deposition conditions. Structural analyses carried out by X-ray diffraction (XRD). MgO films were obtained at the deposition conditions as follows:
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$\mu$ -볼로미터의 pixel pitch가$44{\mu}m$ 에서$35{\mu}m$ 로 작아지며 볼로미터에 입사되는 적외선의 광량은 역시 80% 정도 감소하게 된다. 불로미터 leg 폭과 길이는 구조적 안정을 위해 고정하였으며 두께를 변화하였다. 열적 고립이 개선되는 결과는 시뮬레이션을 통해 비교 분석하였다. Leg를 구성하는 a-Si과 Ti의 두께 변화에 의해$44{\mu}m$ pixel pitch 인 경우 열 전도도가 1.52E-7 [W/K] 에서 9.64E-8 [W/K]로 개선되는 결과를 얻었으며,$35{\mu}m$ 인 경우 열 전도도는 1.21E-7 [W/K]에서 1.07E-7 [W/K] 로 개선되는 결과를 얻었다. -
In this paper, we suggest how to adapt RFID system to train switching process, and then what we get the merit or problem. We analyze the train switching process to adapt RFID system on the process and have field test. The role of RFID system in train switching process is to automatically read car position information. The specification of the test system is 900MHz, and Gen2 passive tag. If we get the system which automatically read car position information in train switching yard, it prevents human errors and makes more reliability, the performance of train operation will grow up. Even though the environment of train switching yard is outdoors, the test result gives us the ability to adapt RFID system to train switching process and the process will be more simple.
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최근에 광도전체와 형광체를 기반으로 평판형 디지털 방사선 검출기의 상업적 발전가능성에 많은 관심을 가지고 있다. 본 연구는 기존의 직접변환방식에 널리 사용되었던 비정질 셀레늄 (amorphous selenium) 기반의 디지털 방사선 검출기보다 높은 전기적신호 및 동작특성을 가지는 물질층을 제작하기 위해 High Purity (99.99%)의 상용화된
$PbI_2$ 를 특수용매에 담가두었다가 약 1시간동안 Biology 초음파 처리한 후 농축기를 사용하여 건조된$PbI_2$ 를 3Roll-milling을 사용하여 미세크기의 Powder를 얻어내었다. 합성된$PbI_2$ Powder를 PIB(Particle-in-Binder)법을 이용하여 전도성을 가진 ITO(Indium-tin-oxide)코팅된 유리판에 제작된 필름의 상부에 Magnetron sputtering system 을 사용하여 전극을$1cm{\times}1cm$ 의 크기로 증착하였다. I-V 테스트를 통하여 X선 조사시$PbI_2$ 필름의 Sensitivity, Dark current, SNR(signal-to-noise ratio)을 측정하여 필름의 전기적 검출 특성을 정량적으로 평가하였고 SEM(scanning electron microscope)을 통하여 입자의 크기를 관찰하였다. -
Every year respect a countermeasure establishment the electric leakage detection system and electric leakage investigation work are becoming enforcement line plentifully in about the electric leakage accident which is increasing, measuring in compliance with a most ground connection voltage and an image electric current mainly is become accomplished, inputs a pulsation group signal in the line and detects a signal change between the line a method which there is. In order to investigate the quality in compliance with an electric leakage electric current from the electric leakage area after conferring the electric leakage environment in compliance with a flooding when the electric leakage electric current exists in the surface, it investigated the electric leakage electric current quality from the electric current distribution and flooded districts from the present paper.
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In order to investigate the quality in compliance with an electric leakage electric current from the electric leakage area after conferring the electric leakage environment in compliance with a flooding when the electric leakage electric current exists in the surface, it investigated the electric leakage electric current quality from the electric current distribution and flooded districts from the present paper. At the result, we have known that flux density is constant regardless of distance variation.
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본 연구는 고압전력용 중전기기의 몰드절연 및 옥외용 LED의 절연소재는 기기내부에서 발생된 열에너지를 외부로 방사시키는 것이 무엇보다 중요한 것이다. 이런 이유로 고압전력용 전력기기 대부분은 상당한 체적분을 가지고 있기에 초절연을 가지면서 고열전도를 갖는 나노콤포지트를 개발하기위해 에폭시 메트릭스 기반 질화알루미륨의 표면 처리를 실시하여 에폭시 AIN Nanocomposites를 제조하였다. 나노입자의 균질분산은 나노콤포지트 열전도와 초절연성능에 크게 영향을 주게 된다. 이런 소재개발을 위해 에폭시메트릭스에 나노입자의 충진함량을 3wt%로 하였다. 전처리공정을 통하여 에폭시-나노콤포지트에 두 종류의 금속성 coupling agent (Tyzor TE, Tyzor AA-75)를 질화알루미륨 나노입자 표면처리를 건식법으로 실시하였다. 제조된 Epoxy-AIN Nanocomposites의 열적특성과 전기적 특성을 측정하였다. 전기적특성으로 초절연성의 특성인 형상파라미터가 10.93을 그리고 척도파라미터는 176 kV/mm로서 Weibull Plot 누적확률밀도로서(63.2%)의 통계분석된 값을 얻었다. 또한 열적특성 평가를 위해 유리천이온도와 DMA의 온도특성를 조사하였고, 열적.전기적 특성과 나노콤포지트 내부분산(내부 모폴로지:TEM영상)와 연관되어 연구한 결과, 상당히 일치한 결과를 얻을 수 있었다.
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In this paper, various kinds of epoxy based nanocomposites were made and AC breakdown properties of nano-
$TiO_2$ and micro-silica filler mixture of epoxy based composites were studied by sphere to sphere electrode. Moreover, nano- and micro-filler combinations were adopted as an approach toward practical application of nanocomposite insulating materials. AC breakdown test was performed at room temperature$(25^{\circ}C)$ ,$80^{\circ}C$ and$100^{\circ}C$ . The result shows breakdown strength about non-filled, nano-scale$TiO_2$ , micro-scale silica and nano-$TiO_2$ , micro-silica filled epoxy composites. -
A enameled wire may have better corona-resistance when its coating material contains nano-sized inorganic particles. However, industrial applications are still limited because an aggregation between nanofillers may happen during coating processes. In this study we use a novel scheme of surface modification with silane on silica nanoparticles using sonochemical reaction where composition and surface density of silanes can be controlled in order to reduce particle-particle attractive interaction. Functionalized nanoparticles are evenly dispersed in the matrix confirmed by SEM and energy dispersive x-ray analysis. Dielectric strength and thermal resistance of the nanocomposite wires are improved while flexibility of the wire maintains.
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Direct Current Fiber Reinforced Plastic (DC FRP) insulators were developed and their mechanical and electrical characteristics were investigated. Electrical tests were carried out to measure withstanding and flashover voltages under common use frequency condition. Tensile and bending tests were performed for the mechanical characteristics. The test results showed that DC FRP insulators had superior voltage resistances and strengths to porcelain insulators.
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In the study the volume resistivity Characteristics of epoxy resin using nano and micro filler, nano and micro filler are made from insulating material epoxy resin using for transformer equipment and molding several devices as changing amount of addition of diameter 12 [nm] and 7 [
${\mu}m$ ]$SiO_2$ , we measured volume resistivity of nano and micro filler by High Resistance Meter(4329A). As the result of measurement, When is micro filler, the volume resistivity continuously increased over 80 [$^{\circ}$ ]. -
본 연구는 고전압 전력기기인 몰드형변압기와 계기용 변성기인 CT, PT 절연특성에 유용한 Epoxy/Nano-Micro Mixture Composites(이하,ENMMC)를 개발하기위해 무엇보다 중요한 것은 Nano입자인
$SiO_2$ _10nm입자의 표면을 제어하여 즉, 표면의 소수성을 크게 하여 나노입자의 균질한 분산을 얻은것이 무엇보다 중요하다. 개발된 Epoxy/$SiO_2$ _10nm Nanocomposites와 Microcomposites을 기계적 전단응력을 이용하여 균질 혼합을 실시하였다. 이런 조건을 이용한 전기적특성을 측정하기위해 구대구 전극이 완전함침된 평등전계하에서 절연파괴전압을 측정하기 시편을 제조하였다. 마이크로입자의 충진함량을 일정하게 유지하여 나노입자 충진함량비율을 4가지로 변화시켜 절연파괴특성을 연구하였다. 충진함량이 나노입자의 경우 1wt%이하의 값이 상대적으로 우수한 절연파괴특성으로 와이블 플롯을 통하여 알수있었다. 상대적으로 멀티나노콤포지트의 형상파라미터가 큰 결과값을 얻을수 있었다. 그리고 스케일파리미터는 누적확률 밀도함수로서 63.2%에서 대단히 큰 초절연성의 절연소재를 개발할수 있었다. -
This paper introduces the findings of a detailed study on breakdown voltage strength under DC voltage and the development of HVDC cable. Recently, Nano-fillers are attracting attentions of many researchers and engineers, since they seem to bring higher potentials for advancement of electrical insulating properties as nano-composites. Additives and fillers are often adopted to polymeric materials for improving insulating and machanical properties. We have improved the polymer composition and developed a new insulation material for HVDC cable. Each specimen blended at LDPE1 to antioxidant, LDPE2 to antioxidant, pure XLPE was manufactured respectively. The insulation performances of the proposed insulator were compared with specimens blended at nano powders. DC breakdown strength of LDPE1 specimen at 90[
$^{\circ}C$ ] was higher than other specimens. The experimental results show that polar groups intorduced in moleculars chains of blended specimen plays an important role in enhancement of thermal conductivity. -
전자기기의 Slim화에 따라 부품 일장용 Board 기판의 두께도 날로 감소해지고 있다. 이와는 정 반대로 기판의 층수는 더 늘어나고 있다. 이에 따라 기판의 구성요소인 절연재의 두께도 감소하고 있다. 전자기기는 각각의 Module이 저항을 가지는데 이를 matching하기 위해서 각 module이나 package가 가지는 저항값을 상호 비슷하게 맞춘다. 하지만, 기판의 절연재의 두께 감소는 이러한 저항값이 낮아지게 한다. 이렇게 낮아진 저항값을 높이기 위해서는 전도체의 폭을 줄여야 한다. 하지만, 이렇게 전도체의 폭을 줄이는 것은 기판 제작 비용의 상승 및 제작 물가에 이르게 할 수 있다. 이를 해결하기 위해서는 절연재의 유전율을 낮추는 것이 가장 효과적이다. 본 연구에서는 PCB 기판의 유전율을 낮추기 위해 Liquid Crystalline Polymer(LCP)에 PTFE powder를 넣어 기판 재료의 가능성을 조사하였다. 유전율은 PTFE의 첨가량이 증가함에 따라 감소하여 40wt% 첨가할 경우 유전율이 2.4 정도로 낮아졌다. 이에 반해 열팽창계수는 증가가 크지 않고 peel strength는 감소함을 알 수 있었다.
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다층카본나노튜브(MWCNT) 를 첨가한 전력케이블용 CNT 반도전 컴파운드를 용융혼합법을 사용하여 제조하였다. 카본나노튜브, 카본블랙, 분산제, 가교조제 함량변화에 따른 초고압 CNT 반도전 컴파운드의 특성을 조사하였다. 카본나노튜브 단독, 카본나노튜브와 전도성 카본블랙을 혼용함에 따른 상승효과, 분산제와 가교조제 사용에 따른 초고압 전력케이블용 CNT 반도전 컴파운드의 우수한 물성을 확인할 수 있었다.
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This paper focuses on improving organic thin film transistor (OTFT) characteristics by controlling the self-organization of pentacene molecules with an alignable high-dielectric-constant film. The process, based on the growth of pentacene film through high-vacuum sublimation, is a method of self-organization using ion-beam (IB) bombardment of the
$HfO_2/Al_2O_3$ surface used as the gate dielectric layer. X-ray photoelectron spectroscopy indicates that the IB raises the rate of the structural anisotropy of the$HfO_2/Al_2O_3$ film, and X-ray diffraction patterns show the possibility of increasing the anisotropy to create the self-organization of pentacene molecules in the first polarized monolayer. An effective mobility of$2.3{\times}10^{-3}cm^2V^{-1}s^{-1}$ was achieved, which is significantly different from that of pentacene films that are not aligned. The proposed OTFT devices with an ultrathin$HfO_2$ structure as the gate dielectric layer were operated at a gate voltage lower than 5 V. -
We characterize a flexible self-assembled liquid crystal display (LCD) fabricated from a polyimide (PI) alignment layer with polydimethylsiloxane pixel walls. Ion beam (IB) irradiation aligned LC molecules in the PI layer and bonded two flexible plastic substrates in a one-step assembly of the pixel walls. X-ray photoelectron spectroscopic analysis, Fourier transform infrared spectroscopy, and scanning electron microscopy provided chemical and physical evidence for the formation of stable chemical bonds between the PI layer and the PDMS pixel walls in addition to the important maintenance of a uniform 6 um gap between the two substrates without the use of any epoxy resins or other polymers.
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In recent years, the merging of nanomaterials and nano-technology into electro-optic (EO) device technology such as liquid crystal displays (LCDs) has attracted much attention because of their unique electro- and magneto-optic properties and novel display applications. One example of hybrid LC-inorganic systems is semiconductor nanorods added to LC for their strong reorientation effect and tunable refractive index. Doping of nanoparticles in LC or polymers can lead to changes in performance characteristics such as electro-optical, dielectric, memory effect, phase behavior, etc. Due to the tunability of LCDs with mixed inorganic materials, low voltage operation of a LC system can also be achieved using the significant electro-optical effect achieved through suspension of ferroelectric nanoparticles in NLC.
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Ion bombarded inorganic materials for LC alignment has been researched as it provides controllability in a nonstop process for producing high-resolution displays. Many optically transparent insulators such as
$SiOx$ and a-C:H have been investigated as potential candidates for inorganic alignment materials. Even so, LC orientation on a new material with superior capacity is required to produce high-performance displays. Many inorganic materials with high permittivities can reduce the voltage losses due to the LC alignment layer that are a trade-off for its capacitance. The minimum voltage for device operation can be applied to the LC under low external voltage using these materials. This means that low power consumption for LCD applications can be achieved using a high-k alignment structure in which the LC can be driven effectively with a low threshold voltage. Among the many other potential high-k oxides, HfO2 is considered to be one of the most promising due to its remarkable properties of high dielectric constant, relatively low leakage current, large band gap (5.68 eV), and high transparency. Due to these characteristics, HfO2 can be used in LC alignment to increase the capacitance of the inorganic alignment layer for low-voltage driving of LCs. -
Optical bounce which occurs by over twist of the liquid crystal (LC) director has a problem of response time in fringe-field switching (FFS) modes. After removing the electric field, effective birefringence (
$d{\Delta}n_{eff}$ ) at the edge of pixel electrode meets the$\lambda/2$ phase instantly, since tilt angle of LC directors at that position suddenly decreases compared to twist angle. In this paper, based on the careful analysis, origin of optical bounce has been explained. -
Viewing angle controllable liquid crystal display (LCD) associated with fringe-field switching (FFS) mode with high image quality is proposed. In the device, one pixel is composed of main and sub pixels, in which adjacent sub pixel is patterned with pixel electrodes direction orthogonal to the adjacent one. In this way, light leakage can be generated in the all viewing angle directions except the normal direction, realizing view angle controllable LCD in both horizontal and vertical directions.
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This paper had analyzed property of LED chip which has appropriate distribution and had designed modeling in order to experiment optical property of LED module through simulation. also throughout error value between street light and simulation data, precisive simulation could be inferred. as a consequent, transformation of optical property had henceforth verified the first value of module array.
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긴 수명, 높은 효율, 색 재현성 및 친화경등의 많은 장점을 가진 발광다이오드는 높은 접합온도로 인하여 광 효율이 저하되고 이는 신뢰성 저하 및 방열부 장착으로 인한 비용 상승 등의 문제로 발전에 악영향을 받고 있다. 본 논문에서는 방열부인 HeatSink의 구조적 변화가 방열성능에 어떠한 영향을 끼치는지 알아보기 위해 열화상 적외선 카메라와 적분구를 이용하여 서로 다른 HeatSink를 가지고 각각의 열적 광학적 특성을 파악하였다. HeatSink의 Fin 길이를 길게 하여 방열면적을 상승시키는 것보다 Fin 두께를 작게 함으로써 Fin 개수를 늘리는 것이 방열성능을 크게 개선시킬 수 있었고 이는 광 출력으로 이어졌다.
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본 연구에서는 2,3,5,6-fluoro-7,7,8,8-tetracyanoquinodimethane (F4-TCNQ)를 이용한 유기 발광 소자의 전기적 특성에 대하여 연구하였다. F4-TCNQ 는 높은 전자 친화도를 가지고 있어서 전하 수송층이나 전하 주입층에 많이 사용되고 있다. 또한 TCNQ 유도체들은 물질의 전도도를 조절하는 용도로 많이 이용된다. TCNQ 유도체를 유기 발광 소자의 전하 수송층이나 전하 주입층에 이용할 경우, 소자의 구동 전압이나 효율과 같은 특성들이 향상된다고 알려져 있다. 우리는 소자 특성에 있어서 F4-TCNQ의 영향을 알아보기 위해서 ITO(170nm)/TPD(40nm)/
$Alq_3$ (60nm)/LiF(0.5nm)/Al(100nm)의 구조로 기본 소자를 제작하였다. 그리고 TPD층에 F4-TCNQ를 도핑하여 소자를 제작하였다. 도핑 농도는 5와 10%로 하였다. 또한 ITO와 TPD층 사이에 F4-TCNQ층을 1, 2, 그리고 5nm의 두께로 하여 소자를 제작하였다. F4-TCNQ를 5와 10% 도핑한 소자의 구동 전압은 도핑하지 않은 소자에 비해 감소하였다. 그리고, ITO와 유기물층 사이에 F4-TCNQ층을 삽입한 소자의 특성은 삽입하지 않은 소자에 비해 향상되었다. -
본 연구에서는 ITO 표면 개질에 의한 유기 발광 소자의 특성 변화에 대해서 연구하였다. ITO 전극은 발광 소자의 투명 전극으로 널리 사용되고 있으며 이러한 발광 소자의 특성은 ITO의 표면 상태에 따라 민감하게 반응한다. ITO 표면 개질은 ITO와 유기물 사이의 쇼트기 장벽을 감소시키며, 전극과 유기물의 점착을 향상시켜 준다. 본 실험에서는 습식 처리 방식으로 self-assembled monolayer(SAM)을 사용하였다. 유기 발광 소자의 특성은 SAM 처리에 의해 향상 되었다. 유기 발광 소자는 ITO/SAM/TPD(50nm)/
$Alq_3$ (70nm)/LiF(0.5nm)/Al(100nm)의 구조로 제작하였으며, ITO의 표면 특성은 일반적인 특성 기술에 의해 연구되었다. SAM 처리된 소자는 SAM 처리하지 않은 소자에 비해 구동 전압, 발광 세기, 외부 양자 효율 등이 향상되었다. ITO의 SAM 처리 시간을 0/10/15/20/25분으로 하여 소자를 제작하였다. 15분간 SAM 처리한 소자는 SAM 처리하지 않은 소자에 비해 외부 양자 효율과 전류 효율이 2.6배 상승하였다. 본 실험을 통하여 ITO 표면 위에 SAM층을 삽입한 걸과, 구동 전압, 발광 세기, 효율 등이 향상됨을 알 수 있었다. -
From the analysis of current density-luminance-voltage characteristics of the double layered device in ITO/N,N'-diphenyl-N-N'bis(3-methylphenyl)-1,1'biphenyl-4,4'-diamine(TPD)/tris(8-hydroxyquinoline)aluminum(
$Alq_3$ )/Al, we divided the conductive mechanism by four region according to applied voltage. We have obtained a coefficient of${\beta}_{ST}$ in schottky region (I) is$4.14{\times}10^{-24}$ at the electric field of$3.2{\times}10^5$ V/cm, a slope in negative resistance region (II) appears negative properties decreasing the current density J for proportional in -1.58 square at a electric field of$7.3{\times}10^5$ V/cm. A coefficient of${\beta}_{PF}$ in Poole-Frenkel region (III) is$8.28{\times}10^{-24}$ at the electric field of$8.4{\times}10^5$ V/cm, it was confirm어 that${\beta}_{PF}$ is agrees with a value that relates with${\beta}_{ST}$ such as${\beta}_{PF}=2{\beta}_{ST}$ as the${\beta}_{PF}$ and 2${\beta}_{ST}$ satisfied a theoretical prediction. And it was obtained a potential barrier of${\Phi}_{FN}$ in Fower-Nordheim region(IV) is 0.3 eV at the electric field of$11.2{\times}10^5$ V/cm. -
We have investigated dielectric properties depending on temperature and voltage in organic light-emitting diodes using N,N'-diphenyl-N,N'-bis(3-methylphenyl)-(1,1'-biphenyl)-4,4'-di-amine (TPD) as an hole transport. We analyzed the Cole-Cole plot of TPD. When the voltage is over 3 V, we found that a radius of Cole-Cole plot and
$\beta$ increase as the temperature increases to 65$^{\circ}C$ , However, as the over the 65$^{\circ}C$ , those values decrease. Also, when the voltage is below 3 V, a radius of cole-cole plot and$\beta$ increase with the increased temperature. -
In this study, we presented comparative discrimination methods to identify various line and planar defects observed in nonpolar a-GaN epilayers on r-sapphire substrates. Unlike the case of conventional c-GaN, which is dominated by perfect threading dislocations, systematic identification of undistinguishable defects using transmission electron microscopy (TEM) is necessary to suppress the propagation of defects in nonpolar GaN epilayers. Cross-sectional TEM images near the [0001] zone axis revealed that perfect mixed and pure screw type dislocations are visible, while pure edge, partial dislocations, and basal stacking faults (BSFs) are not discernible. In tilted cross-sectional TEM images along the [
$1\bar{2}10$ ] zone axis, the dominant defects were BSFs and partial dislocations for the$g=10\bar{1}0$ and 0002 two-beam images, respectively. From plan view TEM images taken along the [$11\bar{2}0$ ] axis, it was found that the dominantpartial and perfect dislocations were Frank-Shockley with b=${\pm}1/6$ <$20\bar{2}3$ > and mixed type without an 1 component including b=${\pm}1/3$ <$1\bar{2}10$ > and${\pm}1/3$ <$\bar{2}110$ >, respectively. Prismatic stacking faults were observed as inclined line contrast near the [0001] zone axis and were visible as band contrast in the two-beam images along the [$1\bar{2}10$ ] and [$11\bar{2}0$ ] zone axes. -
높은 휘도를 갖는
$Eu^{2+}$ 가 도핑된$Sr_3MgSi_2O_8$ 형광체는 고상반응법을 사용하여 합성하였다. 몰 비에 따른 조성을 정밀전자저울을 사용 무게를 칭량하여 에탄올을 용매로 하여 혼합, 건조 후 하소 온도는$1000^{\circ}C$ , 합성 온도는$1200^{\circ}C$ 에서$1400^{\circ}C$ 까지$H_2$ 5% Ar 95% 환원분위기에서 소성 온도 별 결정상을 관찰하였고, 그 형태에 따라서는 Powder상태일 때와 Powder를 Press하여 bulk상태로써의 결정상의 변화를 연구하였다. 그 결과 분말상태와 성형을 가한 pellet의 두 가지 형태로 합성하여 비교한 결과 성형공정을 거친 시료의 경우가 분말 상태일 때 보다 좋지 못한 결정상이 관찰되었다.$Sr_3MgSi_2O_8$ 의 미세구조는 SEM으로 관찰하였다. -
현재 전자부품용으로 사용되는 유리프리트의 경우 PbO계를 주로 사용하고 있다. 최근 환경규제에 따른 PbO 사용이 제한됨에 따라 이를 대체할 Pb-free 유리 조성에 대한 연구가 활발히 진행 중이다. Pb-free계로서는
$Bi_2O_3$ 계,$B_2O_3$ 계가 주로 연구되고 있으나 소성 온도가$500^{\circ}C$ 이상으로 높고 또한$Bi_2O_3$ 계는 중금속이기 때문에 문제가 있다. 본 연구에서는$400^{\circ}C$ 미만 소성이 가능한 SnO-$P_2O_5$ 계를 기본 조성계로 선택하고 열적, 전기적, 화학적 특성을 개선하기 위해$R_2O_3$ (R=Al, B), RO(R=Mg, Zn, Ca, Ba) 를 첨가하였다. 개선된 조성으로 샘플을 만들고 이를 대상으로 실제 전자부품 생산 공정에 적용 실험을 진행 하였다. 실험에 사용된 전자 부품은 소형 칩 베리스터로 생산 공정에서 코팅용 유리프리트와 파우더를 절연체로서 전면에 코팅하게 된다. 유리프리트를 코팅함으로서 누설 전류를 차단하고 생산 공정시 베리스터 내부를 보호하게 된다. 실험에 사용된 샘플의 열적 특성은 TMA로, 전기적 절연 특성은 고 절연저항 측정기로 측정하였고 내 산성과 내 알칼리성도 측정하였다. 샘플을 이용하여 완성된 칩 베리스터의 성능은 고온, 내습 신뢰성 TEST(고온:$150^{\circ}C$ 12HR, 내습:$85^{\circ}C$ -85%12HR)로 실험하여 합부판정 (Leakage current <10uA)을 내려 완성품과 불량품을 가려내었다. -
양자점 (quantum dot) 기반의 반도체 레이저 다이오드(laser diode)는 낮은 문턱전류와 높은 미분 이득 및 높은 특성온도 등과 같은 장점을 갖는다. 이러한 레이저 다이오드의 특성은 양자점 활성층 품질에 의해 큰 영향을 받기 때문에 고품위 양자점 성장에 관한 연구가 활발히 진행되고 있다. 양자점 구조 성장시 발생하는 변형 (strain)은 레이저 다이오드의 문턱전류, 발진 파장, 내부양자효율 등과 같은 특성에 영향을 미치는 중요한 요소이다. 특히, 레이저 다이오드의 고출력 동작을 위해서는 양자점 적층 기술이 중요한데, 이때 양자점 활성층 영역에 많은 변형이 발생한다. 따라서, 양자점 성장후 변형을 감소하기 위한 변형 완화층(strain released layer)에 관한 연구가 활발히 진행되고 있다. 본 논문에서는 변형 완화층 연구의 일환으로 비대칭 변형 완화층의 조성 및 두께 변화에 따른 양자점 파장 변화에 대한 연구를 수행하였다.
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대전제어제를 이용하여 양과 음의 전하량을 가지는 토너 입자를 제조하였다. polymer bead와 대전제어제를 각각 용매에 녹인 후 중합하였으며 토너 입자의 크기는 약
$8{\mu}m$ 로 제조되었고 제조된 토너 입자의 전하질량비를 측정하기 위하여 polymer bead의 전하량과 대전제어제가 중합된 토너 입자의 전하질량비를 측정하여 비교하였다. 양의 전하량을 갖는 토너 입자는 약 34.12uC/g로 측정되었고, 음의 전하량을 갖는 토너 입자는 약 -22.5uC/g으로 측정되었으며, 또한 대전제어제가 가지는 양과 음의 특성에 따라 polymer bead의 특성 또한 바뀌는 것을 관찰 할 수 있었다. -
We examine the process to enhance the productivity of the thin-film transistor-addressed liquid-crystal display (TFT LCD) panels with the objective of optimizing the relation between the Type of color PR dispense nozzle and the amount of dispensing of color PR consumption, directly affecting a spectroscopic analysis. Most manufacturers of the panels have been utilizing a spin-type coater. We show that we successfully optimize the spectral values by controlling the color PR dispense type(Static dispense or Dynamic dispense) and the amount of color PR. From this study, we accomplished to decrease 43% in color PR consumption and to decrease 30% in color PR Stained, to decrease 30% rework rate.
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High-density optical information storing equipment, which is using Blu-ray, is the next generation information storing equipment that has about form six times to thirty-five times capacities. and high-density optical information storing equipment uses high NA(Numerical Aperture) aspheric glass objective lens as optical pick-up equipment to record and recognize high-density date. Generally this objective lens is developed and produced through a way of GMP(Glass Molding Press) that uses molding core that is performde by Ultra precision grinding, but grinding performing that has high-accuracy is very difficult because objective lens form is high NA. In this research, we preformed Ultra precision turning, using single crystal diamond bite, about WC(Co 0.5%), sintering brittleness material that is used molding core's material for GMP. and we confirmed aspheric glass lens compression of deformities molding core's Ultra precision turning possibility by measuring surface roughness(Ra) and processing surface's condition.
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For the deposition of the semiconductor nanocrystals or quantum dots, it is required to have the substrates with smooth surface roughness. Slot-die coating method wad adopted and optimized varying the processing parameters like coating speed, gap distance, solution concentration, etc to get the smooth coated films on flexible substrates. The coating speed in slot-die method was varied from 1 m/min to 2.5 m/min focusing especially on its industrial usage. The gap distance between the substrate surface and slot-die lip was changed also to control mainly the thickness of coated films.
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나노 형광체 합성에 있어서 입자 형상 및 입자 크기의 변화를 알아보기 위해 녹색 발광하는 ZnS:Cu 형광체를 액상반응법으로 합성하였다. X선 회절 분석기로 결정성을 확인하였으며, 전계 방사 주사 전자 현미경 (FE-SEM)을 통해 각각 30~80 nm 이하 크기임을 확인하였다. 녹색발광을 하며, 450
$^{\circ}C$ 부터 900$^{\circ}C$ 까지 온도 상승함에 따라 결정성이 증가 하였으며, hexagonal구조에서 가장 효율이 높은 PL 값을 보였다. -
전자부품용 Pb-free sealing frit의 열팽창계수를 기판에 matching 시키기 위하여 음의 열팽창계수를 가지고 있는
$\beta$ -Eucryptite,$\beta$ -Spodumene를 합성하여 filler로 첨가하였다. 합성된 filler는 저온소성용 유리프리트의 높은 열팽창계수를 조절하기 용이하고, 유리프리트와 복합화 하여 소성하면 낮은 열팽창계수로 인한 우수한 열충격 저항성을 갖는다. Filler로써$\beta$ -Eucryptite,$\beta$ -Spodumene의 결정성을 향상시키기 위해$1250^{\circ}C$ 에서 5 시간 동안 유지하는 합성공정을 3회 반복 진행한 후 XRD를 사용하여 결정성을 분석하였고, TMA를 이용하여 filler 첨가량에 따른 유리프리트의 열팽장계수의 변화를 측정하였다. 또한, filler 입도와 함량에 따른 melting 특성을 분석하기 위해 Pill test를 진행하였으며, soda-lime glass 기판과의 접합면을 SEM을 사용하여 관찰하였다. -
일반적으로 스크린 프린팅 공정은 실비가 간단하고 공정이 쉬우며 가격이 저렴한 특성을 가지고 있다. 본 연구에서는 스크린 프린팅 방법들 이용하여 절연층을 코팅하고 도체 패턴을 형성하여 MCPCB(Metal-Core Printed Circuit Board) 기판을 제작하였다. 또한, 이 방법으로 제작된 MCPCB 기판의 방열 특성을 기존 상용 MCPCB와 비교 평가하였다.
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OLED소자의 양극재료로써 현재는 산화인듐주석(ITO : indium tin oxide) 박막이 널리 이용되고 있다. 그러나 낮은 전기 비저항과 높은 투과도를 갖는 ITO 박막을 얻기 위해서는
$300^{\circ}C$ 이상의 고온에서 성막되어야 하며, 원료 물질인 인듐의 수급량 부족으로 인한 문제점과 독성, 저온증착의 어려움, 스퍼터링 시 음이온 충격에 의한 막 손상으로 저항의 증가의 문제점이 있고, 또한 유기발광소자의 투명전극으로 쓰일 경우에 유기물과의 계면 부적합성, 액정디스플레이의 투명전극으로 사용될 경우에$400^{\circ}C$ 정도의 놓은 온도와 수소 플라즈마 분위기에서 장시간 노출 시 열화로 인한 광학적 특성변화가 문제가 된다. 이러한 문제점을 지닌 ITO 박막을 대체할 수 있는 물질로 산화 인듐아연(lZO) 박막이 많은 각광을 받고 있다. IZO(Indium Zinc Oxide) 박막은 저온 ($100^{\circ}C$ 이상)에서 증착이 가능하고 추가적인 열처리 없이도 가시광 영역에서 90% 이상의 광 투과도와${\sim}10^{-4}{\Omega}cm$ 이하의 낳은 전기 비저항을 갖는 것으로 알려져 있다. 이러한 IZO박막은 성막 후 고온의 열처리 과정이 필요 없기 때문에 폴리카보네이트와 같은 유기물 기판을 사용하여 제작 가능한 유연한 평판형 표시 소자의 제작에도 적용될 수 있다. IZO(Indium Zinc Oxide) 박막은 상온 공정에서도 우수한 전기적, 광학적, 표면 특성을 나타낼 뿐만 아니라 양극재료로써 높은 일함수를 가지고 있어 고효율의 유기 발광 소자를 구현하는데 유리한 재료라 판단된다. 본 연구에서는 TCO 박막의 면 저항과 표면 거칠기가 OLED 소자의 성능에 미치는 영향을 조사하였다. R.F Magnetron Sputtering을 이용하여 투명 전도막을 성막 형성 하였으며, 기판온도와 증착과정에서 주입되는 산소, 수소의 유랑 변화가 박막의 구조적, 전기적 특성에 어떠한 영향 미치는 것인가를 자세히 규명하였다 ITO 와 IZO박막은 챔버 내 다양한 가스 분위기(Ar,$Ar+O_2$ and$Ar+H_2$ ) 에서 R.F Magnetron Sputtering 방법으로 증착했다. TCO박막의 구조적인 이해를 돕기 위해서 X-ray diffraction 과 FESEM으로 분석했다. 광학적 투과도와 박막의 두께는 Ultraviolet Spectrophotometer(Varian, cary-500)와 Surface profile mersurement system으로 각각 측정하였다. 면저항, charge carrier농도, 그리고 TCO박막의 이동성과 길은 전기적특성은 Four-point probe와 Hall Effect Measurement(HMS-3000)로 각각 측정한다. TCO 박막의 표면 거칠기에 따른 OLED소자의 성능분석 측면에서는 TCO 박막의 표면 거칠기 조절을 위해 photo lithography 공정을 사용하여 TCO 박막을 에칭 하였다. 미세사이즈 패턴 마스크가 사용되고 에칭의 깊이는 에칭시간에 따라 조절한다. TCO박막의 표면 형태는 FESEM과 AFM으로 관찰하고 그리고 나서 유기메탈과 음극 전극을 연속적으로 TCO 박막위에 증착한다. 투명전극으로 사용되는 IZO기판 상용화를 위해 IZO기판 위에$\alpha$ -NPB, Alq3, LiF, Al순서로 OLED소자를 제작하였다. 전류밀도와 전압 그리고 발광과 OLED소자의 전압과 같은 전기적 특성은 Spectrometer (minolta CS-1000A) 에 의하여 I-V-L분석을 했다. -
This paper introduces the characteristics of SnO2 inorganic film deposited by radio-frequency magnetron sputtering as an alternative alignment layer for liquid crystal display (LCD) applications. The pretilt angle of the SnO2 layer was shown to be a function of the ion beam(IB) incident angle, a planer alignment of nematic liquid crystal was achieved. The about
$1.8^{\circ}$ of stable pretilt angle was achieved at the range from 1500 ~ 2500eV of incident energy. To characterize the film shows atomic force microscopy (AFM) on the IB irradiated SnO2 surfaceand the X-ray phtoelectron spectroscopy analysis showed that the liquid crystal(LC) alignment on the IB irradiated$SnO_2$ surface was due to the reformation of Sn-O bonds. Also, Figure 1 shows that The alignment capability of the IB irradiated SnO2 layers is maintained until annealing temperature of$200^{\circ}C$ . Comparable electro-optical characteristics to rubbed polyimide were also achieved. -
The aligned liquid crystals (LCs) display on SiNx thin films using ion-beam (IB) irradiation was studied with controllability ofpretilt angle depending on incident energies of the IB. Plasma-enhanced chemical vapor deposition (PECVD) was used to orient the LCs on SiNx alignment films. The LCs alignment property for the SiNx thin films were observed to verify the practical application potential (figure1). A good LCs alignment of vertical alignment LCs cells on SiNx thin film surfaces irradiated with incident IB energy of 1800eV was achieved. Also, a good LC alignment by the IB irradiation on the SiNx thin film surface was observed at an annealing temperature of
$180^{\circ}C$ . However, the alignment defects of the nematic liquid crystal was observed at an annealing temperature above$230^{\circ}C$ . The atomic force microscopy (AFM) images of LCs on SiNx thin film surfaces irradiated with IB energy was used for the surface analysis. -
Most liquid crystal display modes, including the twisted nematic (TN)
$mode^1$ , the in-plane switching (IPS)$mode^2$ , the fringe field switching (FFS)$mode^3$ , and the vertically aligned (VA)$mode^4$ are based on either a horizontal or a vertical alignment. However, for some applications, such as no-bias-bend (NBB) pi cell or bistable bend-splay display, an intermediate pretilt angle is essential$^5$ . NBB pi cells have been a focus of interest because of their fast response time; however, the reliable control of the intermediate pretilt angle of liquid crystals that is required for the fabrication of NBB pi cells is challenging. The controllable pre-tilt angle of liquid crystals was investigated using a blend of horizontal and vertical polyimide prepared by a rubbing method. Various pretilt angles in the range from0^{\circ}$ to90^{\circ}$ were achieved as a function of the vertical polyimide content. We observed uniform liquid crystal alignment on the rubbing-treated blended polyimide layer. A NBB pi cell with an intermediate pretilt angle of47.8^{\circ}$ was manufactured. This cell had no initial bias voltage and a low threshold voltage, which indicates that it has low power consumption. In addition, the response time of the NBB pi cell was rapid. -
The PVA(patterned vertical alignment) mode has a excellent dark state at normal direction. but they has a disclination area at divided domain region at voltage on state. so this disclination make a slow response time and decrease transmittance. To overcome this problem, we research about polymer stabilized vertical alignment (PS-VA) method which was using the UV curable reactive mesogen. According to our research, UV exposure condition which was UV dosage condition effected to rising time and decay time and also threshold voltage.
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We have studied the optically compensated splay (OCS) mode using reactive mesogen (RM) monomer to reduce critical voltage, setting voltage and phase transition time from initial bend to splay state. Through the polymerization of UV curable RM monomer, the high pretilt angle from vertical alignment was formed at the surfaces. In this way, orientation of the LC with OCS mode can be achieved without setting voltage and improved electric characteristic.
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This work was focused on the dielectrophoretic force of fullerenes dispersed in liquid crystal host medium, which are investigated in the homogeneously aligned liquid crystal (NLC) cells driven by external electric field. A fullerene of 10 wt% was doped into the LC medium and its electric field induced motion was controlled by both in-plane and vertical electric field. When the electric field was applied, the fullerene start to move in direction of applied electric field. The dark, grey and white states in the proposed device can be obtained by suitable combination of the polarity of applied electric field. The w and l are the width and distance between the electrodes. The reflectance at different l was measured and was found to be increased with increasing l. The dynamical motions of fullerene particles in LC medium suggest that fullerene can be designed for electronic-paper like displays.
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Liquid crystals (LCs) which utilize the phase above blue phase temperature range are also known to format the optically nanostructured composites devices based on Kerr effect these days. We report electro-optical characteristics of the polymer-stabilized cholestric LCs by using UV curable monomers at the different temperatures such as blue phase temperature range, blue phase-isotropic transition temperature, and isotropic temperature range. The devices exhibit different electro-optic characteristics.
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In this paper, we have confirmed the temperature of LED chip and McPCB with thermal simulation program which is CFDedign V10 for analysis the thermal flow of HP LED package. we have known that the heat from LED chip is transferred through heat slug to copper layer of McPCB. the temperature of LED chip shows 85.11 [
$^{\circ}C$ ], which shows the temperature gap of 7.52 [$^{\circ}C$ ] against McPCB. the gap of temperature affect reliability of the wire bonding and die attachment. therefore, copper layer of heat slug on the McPCB should designed with the largest dimension. -
AZO films were prepared by
$Ar:H_2$ gas RF magnetron sputtering system with a AZO (2wt%$Al_2O_3$ ) ceramic target at a low temperature of$100^{\circ}C$ . To investigate the influence of$H_2$ flow ratio on the properties of AZO films,$H_2$ flow ratio was changed from 0.5% to 2%. As a result, the AZO films deposited with 1%$H_2$ addition showed electrical properties with a resistivity of$5.06{\times}10^{-3}{\Omega}cm$ . The spectrophotometer-measurements showed the transmittance of 86.5% was obtained by the film deposited with$H_2$ flow ratio of 1% in the range of 940nm for GaAs/GaAlAs LED. -
This report makes an important correction to estimating angular dependent emission pattern of Organic Light-Emitting Diodes (OLEDs). Today, experiments on measuring angular light intensity of OLEDs are conducted without considering the difference between the view angle identified by photodiode and the actual angle being measured. ITO-TPD-
$Alq_3$ -LiF-Al Organic Light-Emitting Diode was used to find out the degree of the error. In this case, the difference in average was about$1^*$ , which is highly significant. Since the difference varies from case to case, the need for adjustment must be evaluated for each case. -
각도에 따른 배면 유기 발광 소자의 발광 패턴에 대해서 연구하였다. 소자 내에서 발광한 빛은 등방성으로 퍼져 나가고 굴절률이 n인 매질과 공기의 계면에서 굴절하게 된다. 소자 내에서 굴절되어 퍼져 나온 빛의 각도에 따른 빛의 세기를 측정하였다. 또한 배면 유기 발광 소자에서의 시야각을
$10^{\circ},\;20^{\circ},\;30^{\circ},\;40^{\circ},\;50^{\circ},\;6^{\circ}$ 로 변화시켜 각도에 따른 발광 패턴을 알 수 있었다. 소자 내에서 발광한 빛이 소자 밖으로 퍼져 나올 때의 발광 패턴을 편광판을 이용하여$0^{\circ}$ 와$90^{\circ}$ 로 변화시켜 실험하였다. 소자의 구조는 ITO(170nm)/TPD(40nm)/$Alq_3$ (60nm)/LiF(0.5nm)/Al(100nm)으로 하고, 유기물층과 음전극은$2{\times}10^{-5}$ Torr에서 증착하였다. 유기물의 증착 조건은$2{\times}10^{-5}$ torr의 진공도에서$1.5{\sim}2.0{\AA}/s$ 속도로 열 증착하였다. 전극의 증착 조건은$2{\times}10^{-5}$ torr의 진공도에서$1.5{\sim}2.0{\AA}/s$ 속도로 열 증착하였다. 발광 면적은$3mm{\times}5mm$ 이다. 소자의 각도에 따른 발광 스펙트럼 측정은 USB-2000을 사용하였다. 소자 밖으로 나오는 편광되어진 빛을 측정하기 위하여 편광판을 사용하여 측정하였다. -
We have investigated the holographic grating formation on Ag-doped amorphous chalcogenide AsGeSeS thin films with Ag thickness. Holographic gratings have been formed using Diode Pumped Solid State laser (DPSS, 532.0nm) under [P:P] polarized the intensity polarization holography. The diffraction efficiency was obtained by +1st order intensity.
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The size of LCD Panel is gradually getting bigger. But the efficient uses of glass and the increasing output of narrow bezel type makes importantly the role of sealant which bonding two glasses. We devised a new tester with pre-inserted blade for interfacial fracture toughness measurement, and evaluated quantitatively bonding ability of sealant. The blade tester has been analyzed with two process parameter, moving speed and inserting depth of blade.
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Recently, polymeric microlens arrays have become important elements in many applications. Microlens arrays have been used to enhance luminance efficiency and luminance power efficiency of light-emitting diodes (LEDs) and organic LEDs. Many processes for fabrication of microlens array are studied. Though the MLA has been fabricated by electroformed mold, LIGA process and reflow method, these methods were required masks, multiple process steps and post processing. In this paper, we proposed rapid and direct UV laser direct fabrication process using colorless liquid photopolymer, NOA60 for polarization activated microlens. The microlens arrays are formed on the NOA60 on glass, after the focused laser energy was irradiated to the material. The diameter of MLA was varied from 42 to 88
${\mu}m$ , and the height from 0.9 to 1.6${\mu}m$ . The MLA fabricated using NOA60 shows more then 85% transmittance as well as good hardness for optical module. -
상용의 디스플레이로 널리 사용되고 있는 PDP(Plasma Display Panel)는 LCD와의 시장 경쟁으로 인하여 극한의 원가 경쟁 하에 있다. 따라서 각 공정에 대한 공정단가를 낮추기 위한 다양한 공정 및 소재 연구가 진행되고 있다. 그 가운데 하나가 Address와 Bus 전극으로 사용되고 있는 Ag 전극의 저온 소결이다. 이 공정은 저온소결 소재의 개발과 전극에 접촉하는 유전체 층과 matching이 중요하기 때문에 이들 소재의 동시 개발이 필요한 실정이다. 본 연구에서는 Ag 전극의 저온 소성을 위한 다양한 가능성을 검토하였다. 또한, 유전체와 동시 소결 가능한 소재의 특성 향상 및 저온 소성 연구를 동시에 수행하였다. Glass에 대한 유전체 층의 인쇄와 유전체 위에 전극 입자의 크기제어를 통한 기본 조성의 matching 특성을 비교하고 입자 크기가 전극의 소결 온도에 미치는 영향을 비교 평가 하였다. 유전체 층과의 matching 특성을 향상하기 위하여 유전체 조성의 일부를 전극에 첨가하여 두 소재간의 결합력을 증대시키기 위한 실험을 진행하였다. 그 결과를 바탕으로 저온 동시소성이 가능한 전극 소재의 최적화 실험을 실시하고 그 결과 최적의 전극 소재를 제시하였다.
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반도체 레이저 다이오드(laser diode)는 도파로 내부의 굴절률 변화로 발생하는 필라멘테이션(filamentation) 문제와 벽개면 손상으로 인한 catastrophic optical damage(COD) 문제로 고품위/고출력 발진이 제한된다. 양자점 (quantum dot) 레이저 다이오드는 델타 함수 형태의 상태 밀도를 갖기 때문에 이론적으로는 zero 값의 선폭증가요소 특성을 가져 고출력 동작 시 필라멘테이션 문제를 제거할 수 있다. 또한 고출력 동작을 위한 COD 문제는 낮은 광 밀도를 갖는 활성층/도파로 영역의 에피구조 최적화를 통해 해결할 수 있다. 본 논문에서는 고출력 808 nm 양자점 반도체 레이저 다이오드 개발을 위한 에피구조 설계 및 최적화 연구를 수행하였다.
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대전제어제를 이용하여 전하량을 가지는 토너 입자를 제조하고, 입자의 유동성을 부여하기 위하여 입자의 표면처리를 하였다. 제조된 토너 입자의 크기는 약
$8{\mu}m$ 정도이며, 표면 처리를 위해 크기가 약 14nm 정도인 nano-silica를 사용하였다. 대전제어제가 첨가된 토너 입자의 평균 전하질량비는 30.9uC/g이고, 표면처리를 한 입자의 전하질랑비는 외첨 시간이 증가함에 따라 점차적으로 감소하는 것을 관찰 할 수 있었다. 또한 표면처리가 된 입자의 유동성은 표면처리를 하지 않은 입자 보다 우수하다는 것을 관찰 할 수 있었다. -
Low temperature annealing for oxide TFTs including IGZO on PI substrate is the essential process to fabricate flexible display devices, since low heat-resistance on PI and PEN substrates limits the temperature range. Laser annealing is one of the promising candidates for low temperature process, and it has been used for various application in semiconductor and LCD fabrication. We irradiated laser to solution-based IGZO thin films on PI substrate were irradiated to laser beam, and investigated laser damage of PI layer. Based on transmittance analysis, wavelength(532nm) and scan speed(1000mm/s) is the optimized condition for laser irradiation about ink-Jet printed oxide TFTs on PI substrates.
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적외선 광투과 칼코게나이드 유리를 성형온도, 단위공정시간, 서냉 시 가압력등 성형조건을 변화시키면서 고온압축성형하였다. 성형된 칼코게나이드 유리렌즈의 특성평가를 위해 성형조건에 따른 렌즈깨짐 현상, 성형렌즈의 결정성 및 투과도를 측정하였다. 성형과정에서의 내부응력과 소재 자체의 낮은 경도로 인해 성형조건에 따른 렌즈깨짐 현상이 발생하였으며, 고온압축성형시 성형온도 범위 (
$330{\sim}340^{\circ}C$ )와 단위공정시간(100초~200초) 조건 변화에 따른 성형 렌즈의 광투과도 및 결정성 차이는 나타나지 않았다. 본 연구를 통해 칼코게나이드 유리 소재의 고온압축 성형성을 확인하여 적외선 광학계 렌즈로써의 적용 가능성을 확인 할 수 있었다. -
As a p-type semiconductor NiO is potential material which can be used in many application including QD-LED. NiO films were deposited on glass substrates using rf-sputtering method. The properties of resistivity, surface roughness, etc in the NiO films were investigated at different sputtering parameters. The resistivity of
$l.88{\times}10^{-2}{\sim}3.71{\times}10^{-2}{\Omega}cm$ with sputtering power(80~200 watts) and change was very low. The sputtering pressure at 3~60 mTorr resulted in rather broad change ofresistivity of$0.58{\times}10^{-2}{\sim}4.67{\Omega}cm$ . The oxygen content in sputtering gas was found to be very effective to control the resistivity from$2.01{\times}10^{-2}$ to$1.22{\times}10^2{\Omega}cm$ with 100~2.5%$O_2$ in Ar gas. In addition, the surface roughness showed the RMS values of 0.6~1.1 nm and the dependence on sputtering parameters was weak. -
RF Magnetron Sputtering 방법을 통해 ZnS:Mn 박막 형광체를 증착한 다층 TFEL (Thin-Film Electroluminescent) Backlight 소자를 제작하였다. Alumina 기판 위에 Au 전극과 PMN 후막 유전체를 Screen printing 기법으로 층을 형성하였다. 그 위에 MgO 박막 유전체를 E-Beam 장비를 이용하여 증착 후, ZnS:Mn 박막 형광체를 50 W 의 저전력으로 약 8000
${\AA}$ 두께로 증착하였다. 형광체는 Sputter 증착 시 Sulfur 부족 현상을 보상해주기 위해 ZnS:Mn (0.5%) Target 에 2 at % 의 Sulfur를 첨가하였으며, 상부 전극으로 사용할 ITO 는 DC Magnetron Sputter 를 이용하여 증착하였다. 어닐링 공정은 Air 분위기에서 급속 열처리 장치 (RTA, Rapid Thermal Annealing) 을 이용하여 600$^{\circ}C$ 에서 20 분 진행하였다. 이러한 과정들을 통해 저전압 고휘도의 TFEL Backlight 소자를 제조할 수 있었다. -
In this work, we report the physical properties of amorphous
$Al_2O_3$ thin films by plasma-enhanced chemical vapour deposition (PECVD) using trimethyl-aluminium (TMA) as the Al precursor at low temperatures. The thin films were deposited on Si substrates. The composition and the bonding structure of the amorphous$Al_2O_3$ films were studied using Fourier transform infrared spectroscopy (FT-IR), Ellipsometer and UV-visible Spectrophotometer and MOCON. -
We used Brewster's Law to examine the mechanism of liquid crystal (LC) alignment on an organic insulation layer when subjected to ion-beam irradiation. Brewster's Law implies that the maximum rate polarized ray on a slanted insulation layers on the substrate and it illustrates the dependence of polarization and themechanical structure on the ion beam irradiation process. The pretilt angle of nematic LCs on the organic insulation surface was about
$1.13^{\circ}$ for an ion beam exposure of$45^{\circ}$ for 1 minute at 1800eV. This shows the dependence of LC alignment on the polarization ratio in a slanted organic insulation layer. -
ITO 박막은 박막 태양전지, 유기 태양전지뿐만 아니라 유연한 디스플레이, 발광다이오드와 같은 광학적 장치에 투명한 전극으로써 널리 사용된다. 글라스나 플라스틱 기판위에 형성된 투명 전극은 식각을 통하여 전기회로를 구성한다. 또한 식각 특성을 개선할 필요가 있다. 이 연구에서 우리는 유리 기판위에 코팅된 ITO 박막을 유도결합
$BCl_3/Ar$ 플라즈마를 이용하여 식각하였다. ITO 박막은 RF 마그네트론 스퍼터링을 사용해 200$^{\circ}C$ 에서 비알칼리 글라스 위에 증착하였고 ITO 박막의 총 두께는 약 250 nm 이었다. 또한 전기 전도성은$4.483{\times}10^{-4}{\Omega}cm$ , 캐리어 농도는$3.923{\times}10^{20}cm^{-3}$ 이고, 홀 이동도는$3.545{\times}10cm^{-2}/Vs$ 이었다. Ar 플라즈마에$BCl_3$ 가스를 첨가시키면서 가스 비율에 따른 ITO의 식각 속도와 ITO와 PR과의 선택비를 측정하였다. 최대 식각 속도는$BCl_3$ (25%)/Ar(75%), 500 W의 RF power, -200 V의 DC-bias voltage, 그리고 2 pa의 공정압력일 때 588 nm/min이었고 선택비는 0.43으로 다소 낮게 측정되었다. 식각된 표면의 화학적 반응은 엑스선 광전자 분광법 (X-ray Photoelectron Spectroscopy)을 사용해 조사되었다. 그리고 식각된 표면의 거칠기는 원자현미경 (Atomic Force Microscopy)을 사용해 측정하였다. -
This paper describes the analysis results of an generated power with a inclined solar radiation. 2 different types of modules were employed to study the effect of the a inclined solar radiation on the generated power amount. As a result, it was confirmed that the generated power increased with the solar radiation and the mono crystal type cells generated higher power than the thin film type cells.
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YBCO coated conductor can change the stabilization layer for purpose and it leads advantages in Improvement of tape's critical properties and Application. Such properties rise possibility of using YBCO coated conductor for Superconductor Fault Current Limiter, therefore, we investigate changing properties under over current condition and limiting characteristics. In this study, YBCO coated conductor's current limiting characteristic stainless steel stabilization layer under condition of changing conductor's insulating layer. Consequently, the resistance followed insulating layer so we know that limiting characteristics.
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Nano composite sample were irradiated and annealed to study irradiation induced phase transformation behavior by nano indention technique. The specimens with 3mm in diameter were irradiatied. Polycrystalline nano filaments were broken their shape and tended to be equilibrium shape like facted sphere. The hardness of irradiatied nanocomposites was decreased by annealing which resulted from the grooving of silver filaments.
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In this paper, we investigated the current limiting characteristics due to the application location of the superconducting fault current limiter (SFCL) such as the feeder, the bus, the secondary side of transformer in a power distribution system. In addition, the quench and the recovery characteristics of the SFCL installed in each location of the power distribution system were compared each other. Through the analysis, in case that the SFCL was applied into the feeder line, its current limiting and voltage-drop compensating characteristics were confirmed to be the more effective. On the other hand, the power burden of the SFCL was increased higher compared to the SFCL'S other application location.
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While critical properties of BSCCO wires rely considerably on grid direction upon BSCCO and have very complicated mechanism of generating a superconducting phase, making it difficult to improve properties of wires, YBCO thin-film wires which can be formed in a superconducting phase upon metal board through vapor deposition processing can get excellent direction and reduce manufacturing costs with more flexibility in improving critical properties; thus, they will be suitable for instrument application in the future. Contrary to BSCCO wires for which thick silver alloy covering materials should inevitably be used, moreover, YBCO thin-film wires have an advantage of making thickness and quality of covering materials different by usage. Such a property can be an important element to widen application of wires by presenting possibility of using thin-film wires as superconducting material for fault current limiter as well as for high power current application. In this study we intend to prepare YBCO thin-film wires with different stabilizer layers to analyze current application and current restriction properties by stabilizer layers on the basis of detailed researches on changes in current classification properties below critical value.
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Improved flux-lock type superconducting fault current limiter(SFCL) is composed of a series transformer and superconducting unit of the YBCO coated conductor. The primary and secondary coils in the transformer were wound in series each other through an iron core and the YBCO coated conductor was connected with secondary coil in parallel. In this paper, we investigated the current limiting characteristics through initial line current after fault initiation. through the analysis, it was shown that the smaller initial line current is superior to current limiting characteristics and a point of view of power burden of the YBCO coated conductor.
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$(Ni_{1-x-y}Zn_xCu_y)Fe_2O_4(x=0.45,\;0{\leq}y{\leq}0.3)$ was synthesized by conventional ceramic processing, and the sintering behavior and the magnetic properties of which were studied as functions of CuO content and sintering temperature. Both the densification and the grain growth rates were significantly enhanced with the increase of CuO content, while abnormal grain growth occurred when the samples of$y{\geq}0.2$ were sintered above$950^{\circ}C$ . Saturation magnetization and coercive field were mainly influenced by the densification and grain growth of the specimens, respectively. -
In this study, the effect of bending strain on the transport property and critical current of lap and butt-jointed BSCCO tapes have been investigated. The samples were joined using a mechanically controlled jointing procedure. In order to ensure a uniform pressure application at the joint part, a single point contact has been devised and also to achieve a uniform thickness at the joint interface.
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최근 세라믹 메탈할라이드 램프의 사용이 증가함에 따라 고효율, 장수명에 대한 기대치가 높아지고 있으며 이런 추세에 의해 신뢰성에 대한 평가가 중요시 되고 있다. 본 논문에서는 이러한 세라믹 메탈할라이드 램프의 수명 특성을 알아 보기 위하여 "신뢰성기준 RS C 0085"를 바탕으로 램프를 20분 점등 후 20분 소등을 한 주기로 하여 2000시간을 반복한 후 전기적 특성 및 구조적 변화를 확인하였다. 그 결과 내부 열화로 인해 전체 저항은 증가하였으며 X선 투시검사 장치를 통해 내부 열화가 발생하여 전극이 틀어지는 특성을 확인하였다.
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ceramic metal halide lamps are a subset of high intensity discharge lamps so named because of their high radiance These lamps weak ionized plasma in a fire-resisting but light transmissive wrapping by the corridor of current through atomic and molecular vapors. for commercial applications, For commercial applications, the conversion of electric power to light must occur with good efficiency and with sufficient spectral content throughout the visible (380-800 nm) to permit the light so generated to render colors comparable to natural sunlight. the purpose of this paper is to carry out a study on the variation of ageing time(2000 On/Off[hr]) on the performance of 150W CMH lamps. Experimental results show that the blackening by reacting W(tungsten)with I atomic has been created in the arc tube of an ageing lamp(2000 On/Off[hr]), the arc was unstable, and increased a lamp resistance made lamp voltage increases significantly. Also, Color temperature of the ageing lamp was moved by the losses of Ho with Dy atomics and by recombination of Na with I.
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We are developing of the evaluation technique and system for testing the performance of circuit breaker using Simplified Synthetic circuit. This facility specification is up to 90[kApeak] and up to 300[kVpeak]. It is possible to verify the interrupting capability by using low-energy and reduce the development period and the cost.
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This paper is focused on understanding the interrupting capability, more specifically of the fix contact, based on the shape of the contact system in the current MCCB. The magnetic driving force was calculated by using the flux densities induced by the arc current, which are obtained by three-dimensional finite element method. There is a need to assure that the optimum design required to analyze the electromagnetic forces of the contact system generated by current and the flux density be present. This is paper present our computational analysis on contact system in MCCB.
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Currently in electric railways, there are various test standards for catenary systems such as stability assessment standards and maintenance standards for appropriate vehicle operation. In Korea, maintenance vehicles are used to measure height, stagger, and wear of catenaries and various tests are being conducted based on maintenance manuals. In this paper, real-time data aquisition technologies for assessment of electric railway current collection status between catenaries and pantographs that are consistantely being developed from the adoption of electric railways were analyzed based on on-board measurement items.
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압전 변압기(PT)는 전자제품의 전원 공급 장치에서 마그네틱 변압기의 대안으로서 소형화와 높은 절연 내압의 특성 등을 가지고 있다. 이는 시스템의 소형화와 절연 특성을 크게 높일수있는 장점을 지니고있다. 본 논문에서는 고정주파수 펄스폭 변조 압전 변압기의 구동을 위해, AM modulation을 이용한, 한 점에서의 센싱을 통한 위상제어와 펄스폭 변조 제어를 제안하였다. 이를 위해 EDF 소신호 분석을 하였고, 루프를 설계하여 검증하여 보았다.
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본 연구는 여러종류의 에폭시 나노콤포지트의 절연파괴 강도에 대한 와이블 특성을 연구하였다. 여러 종류 나노콤포지트는 나노입자 형상의 변화 즉, 층상실리케이트(Layered Silicate)와 구상 입자(SiO2)의 충진함량변화를 통한 절연파괴특성을 연구하였다. 나노+마이크로입자에대한 두 개의 체적비를 통한 멀티-나노복합물을 구현하였고, 그 절연파괴 특성의 결과와 기계적특성으로 굴곡강도특성을 Weibull Plot을 통하여 분석하였다. 순수한 나노콤포지트보다 멀티나노콤포지트가 기계적특성에서 월등하게 나타내었고, 절연파괴강도역시 형상파리미터가 대단히 큰 결과를 얻었다.
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In this study, Nano and micro-filler mixture composites were fabricated by fixed value of
$SiO_2$ nano-filler 0.4 [wt%] according to increase of$SiO_2$ micro-filler [wt%] from 1 to 10. Composites with a good dispersion of mixed$SiO_2$ Nano and micro-particles in the epoxy resins were prepared and experiments were performed to measure the dielectric breakdown strength properties with various temperature and thickness. The dielectric strength properties are compared and analyzed with respect to nano/micro-composites filled with$SiO_2$ fillers less than properties obtained for nanocomposites. -
남북한 간의 전철 전력 설비의 연계 혹은 개량은 다양한 문제점이 발생이 가능하고 각종 기준 및 레벨의 차이가 심각하다. 따라서, 북한의 전기설비의 개량을 위한 전철 전력설비의 노후도 진단기술, 전압안전성 평가, 상호연계를 위한 시뮬레이션, 안전기준 마련등 광범위한 분야의 실용적 접근이 필요하다. 본 논문에서는 남북 및 대륙철도의 실용주의적 접근을 위하여 인프라 분야인 전철 분야의 표준화 방향에 대하여 기술하였다. 이를 위하여 북한 전철 설비의 전압, 지지물, 브래키트, 급전선, 조가선, 전차선, 장력조정장치, 조가방식, 전차선높이, 가고를 각각 분석 하였다.
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To prevent such accidents, molded case circuit breakers with improved short-circuit current interrupting capacity are needed. This paper is focused on understanding the interrupting capability with respect to double contact structure and puffer assisted self quenching that are based on the shape of the contact system in the current molded case circuit breaker. The new arc quenching structure for increasing the interrupting capacity of molded case circuit breakers is investigated by simulation and experiment.
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In stator windings of a 6.6kV rotating machine, internal discharge, corona discharge, and surface discharge are mainly caused by internal voids and insulation degradation. In the case of the discharge spark and electromagnetic pulse generated from a discharge source, we can detect it using various RF resonators like an EM sensor. In order to detect these types of electromagnetic sources, we designed and fabricated a planar patch sensor using a CST-MWS simulation, and PD signals from artificial defected stator windings were also measured by the sensor proposed in this study. Furthermore, In the results of the experiment, it showed similar performance to the HFCT sensor.
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This Impulse Voltage and Current Test System is designed for performing of impulse voltage tests with Lightning impulse voltage 1.2/50(LI) up to 1520kV peak value and switching impulse voltages 250/2500(SI) up to 1120kV peak valu acc. to IEC 60060-1, and furthermore for impulse current test, e.g. testing of arrester sections(
$U_{res}$ =95kV)with current impulses 4/10 and 8/20 up to 70kA peak value. -
가스절연 개폐장치 (Gas Insulated Switchgear : GIS)의 고체 스페이서에 경사 기능성 재료 (Functionally Graded Material : FGM)가 적용될 때, 절연성능이 크게 향상된다. 본 논문에서는 FGM 스페이서가 적용된 GIS의 전극 및 스페이서의 형상을 변경하여 최대전계를 완화시켰다. 이를 위해 완전요인실험 (Full Factorial Design : FFD)과 결합된 반응표면법 (Response Surface Methodology : RSM)의 최적화기법을 이용하여, 전극 및 스페이서의 최적 형상을 설계하였다.
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The main objective of the present paper is multiple effects of the incorporation of certain additives into LDPE (low density polyethylene) on some of the properties of the doped material relevant to its use as an insulating material for HVDC cables. in the present work, the effects of additive and breakdown strength, under de conditions. result of experiments are present and discussed. it is concluded that, although the incorporation of the additives may lead to certain beneficial effects such as the reduction of the dependence on temperature and breakdown strength
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In this paper, we investigated the sensitivity characteristics of
$Bi_{12}BiO_{20}$ (BSO) voltage transformer (VT) by utilizing optical output measured according to the variation of ambient temperature and applied voltage. Fabricated BSO VT slightly showed the decrease of the accuracy in range of from$-20^{\circ}C$ to$50^{\circ}C$ , on the other hand, the variation of the optical output result was not observed at the variation of applied voltage. We could finally confirm the temperature stability, applied voltage range, and the possibility that BSO could be applied for optical sensors in GIS system. -
Piezoelectric Transformer (PT) was emerged in device and material industry. PT has some advantages such as low profile and mechanical energy transfer with little electromagnetic interface (EMI). But, It is known that the maximum PT efficiency can be obtained when it operates near the resonant frequency of the PT. Also PT's resonant frequency moves according to the load conditions Therefore, As the operating frequency moves further from the resonant frequency, the PT efficiency decreases dramatically due to the increase of the circulating current. This paper proposes analyzes modeling of PT convert and propose a guide-line to adaptive control
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This paper illustrates the use of electric field computation to optimize the design of high voltage composite bushing. In the bushing, a high electric stress occurred between field shaper and central conductor by the closely space. Also coaxial cylindrical shield has a great height along the axis to control an electric field. Consequently, all the potentials are raised axially along the field shaper and electric stress is concentrated on a part of the surface of the FRP tube near the upper end of the field shaper. Maxwell 2D simulator based on the boundary element method was also introduced in order to verify the reliability of the polymer bushing. The optimized design uses internal elements for electric stress grading at critical parts of the bushing.
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This paper is that study transformation and insulating performance decrease of HIV wire which is using at general electricity structure or home interior wiring of less than AC 600V by over current. When current raised 1A at 1sec, HIV wire insulator is partial charred with white smoke at 86A and conductor of HIV wire is exposed at 90A. When keep time for 5 minutes, insulating performance of the HIV wire decreased rapidly at 45A.
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This paper demonstrates the application of the preventive maintenance, process to analyse and develop preventive maintenance tasks for rectifier and electric transformer in the SeoulMetro company. Attention is given to the frequency designation, technical details regarding the radiometer, previous electromagnetic noise measurements, and applications of the noise data. This study confirms the feasibility and effectiveness of preventive maintenance applications in the electric trains.
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전도 특성을 가지는 나노선 제작의 연구가 활발하게 진행되고 있다. 본 실험에서는 높은 전도성을 가지는 구리 이온을 이용하여 나노선을 제작하는 실험을 진행하였으며 제작된 구리-나노선의 전도특성을 분석하여 구리 이온 치환 정도에 따른 DNA 전도성 개선 여부를 확인하였다. DNA를 기반으로 구리 Metalization 횟수가 늘어날수록 나노선이 연속적으로 형성되며 선형적이고 높은 전도특성을 가지게 되는 것을 확인할 수 있었다. 이 결과로부터 본 연구에서 사용한 방법을 이용하여 제작된 구리 나노선이 향후 나노소자 제작에 크기 기여할 것으로 기대한다.
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In this work, we investigated the effect of the Zn complex concentration and growth temperature on the growth of ZnO nanorod by hydrothermal method. The ZnO nanorods were performed at condition of the various Zn complex concentration and growth temperature, 0.02 ~ 0.08 M and 60 ~ 80
$^{\circ}C$ , respectably. We found from the SEM results that the diameter and length of ZnO nanorods were with increasing the growth temperature and Zn complex concentration. However, the growth condition in the two parameters wasmore than sensitive compared to Zn complex concentration on increasing the growth rate. From photoluminescence(PL) analysis, the strong band-edge emission for ZnO nanorod grown at 80$^{\circ}C$ with 0.08 M indicated the fine crystallinity. Therefore, the diameter and length of ZnO nanorods have been able to control through the control of front growth parameters. Also, these ZnO nanorods grown low temperature will be available as building block for transparence flexible device applications. -
As we note the electric properties of carbon nanotube, we need to generate carbon nanotubes vertically. Generally, metal catalysts are used to synthesis carbon nanotubes. But through using DLC, dense patricles could be gotten easily. Compare to the case of using metal catalysts, the case of using DLC can conduct vertical grwoth of CNTs easily. In this paper, we changed growth temperature (550, 650,
$7500^{\circ}C$ ) and growth time (3, 6, 9 min) in order to confirm synthesize vertical growth of CNTs on substrates. -
We developed the low level laser therapy(LLLT) apparatus for external injury cure using a GaAsP Diode. This equipment was fabricated by using GaAsP diode and a microcontroller, and designed to enable us to control light irradiation timer, and frequency. In this paper, the designed device was used to find out how GaAsP diode light source affects the skin wound of RAT. In the experiment,
$1cm^2$ wounds on the External injury of RAT were made. Light irradiation RAT and none light irradiation RAT divided, each RAT was irradiated 20 min a day for 9 days. In result, compared with none light irradiation RAT, the lower incidence of inflammation and faster recovery was shown in light irradiation RAT. -
For the Radio Frequency Integrated Passive Device (RFIPD) application, we have successfully developed and characterized high break-down voltage metal-insulator-metal (MIM) capacitors with 2,000
${\AA}$ plasma-enhanced chemical vapor deposition (PECVD) silicon nitride which deposited with$SiH_4/NH_3$ gas mixing rate, working pressure, and RF power of PECVD at$250^{\circ}C$ chamber temperature. At the PECVD process condition of gas mixing rate (0.957), working pressure (0.9 Torr), and RF power (60 W), the AFM RMS value of about 2,000${\AA}$ silicon nitride on the bottom metal was the lowest of 0.862 nm and break-down electric field was the highest of about 8.0 MV/cm with the capacitance density of 326.5$pF/mm^2$ . -
Fabrication of Anodic aluminum oxide under DC vias condition has been studied. When bias and time of anodic aluminum oxide process change, the hole distance and diameter size change. Comparison of fabricated AAO between AC vias and DC vias condition has been studied in this experiment. The first and second anodization of one aluminum is done by using DC and AC power supplier. And first and second anodization of another aluminum is done by DC power supplier. The size of the aluminum is
$1cm{\times}3cm$ , and second anodic aluminum oxide process takes about 45min. It is found that the hexagonal shape appears on the surface of the AAO. AC power source can fabricate aao which have a nano hole array. We can see that the hole on the surface of the AC vias has a better rounded hole than DC vias AAO. we need more data so we can get characteristic about AC power generated AAO. -
Bi2O3 doped ZnO nanostructures structure were successfully synthesized by a thermal evaporatiion process and their structural characteristics were investigated. It is demonstrated that the growth condition such as the areal density, pretreatment of the substrates and growth temperature have great influence on the morphology and the alignment of the nanorods arrays. The density of Bi2O3 doped ZnO nanostructures is controlled by the gold (Au) nanoparticle density deposited on the silicon substrates. Relatively homogenous size and shape were observed by introducing gold(Au) seed-layer as nucleation centers on the substrates prior to the VLS reaction. The samples were characterized by X-ray diffraction, scanning electron microscopy.
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Carbon nanotubes (CNTs) have excellent electrical, chemical stability, mechanical and thermal properties. In this paper, networks of Multi-walled carbon nanotube (MWCNT) materials were investigated as transparent electrode. Sensor films were fabricated by air spray method using the multi-walled CNTs solution on glass substrates. The film that was sprayed with the MWCNT dispersion for 60 sec, was 300nm thick. And the electric resistivity and the light transmittance rate are
$2{\times}10^2{\Omega}cm$ and 60%, respectively. -
l-D nanostructured materials have much more attention because of their outstanding properties and wide applicability in device fabrication. Copper oxide(CuO) has been realized as a p-type metal oxide semiconductor with narrow band gap of 1.2 -1.5eV. Copper oxide nanostructures can be synthesized by various growth method such as oxidation reaction, thermal evaporation thermal decomposition, sol-gel. and Mostly CuO nanowire prepared on the Cu substrate such as Copper foil, grid, plate. In this study, CuO NWs were grown by thermal oxidation (at various temperatures in air (1 atm)) of Cu metal deposited on CuO (20nm)/
$SiO_2$ (250nm)/Si. A 20nm-thick CuO layer was used as an adhesion layer between Cu metal and$SiO_2$ -
반도체 집적회로의 고집적화와 고성능화를 위한 기본소자의 미세화 및 단위공정의 개선이 필요하다. 이를 위해서 본 연구에서는 자기조립특성을 가지는 DNA분자를 형틀로 이용한 CdSe 나노입자들의 위치제어 및 배열기술을 연구하였다. DNA 나노구조물을 기반으로 다양한 형태의 나노구조물 형성이 가능하다는 장점과 발광물질 CdSe 나노입자와의 결합 특성을 이용하여 나노선 및 나노소자를 제작하는 기술을 확보하였다.
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반도체 집적회로의 고질적화와 고성능화를 위한 기본소자의 미세화 및 단위공정의 개선이 필요하다. 이를 위해서 본 연구에서는 자기조립특성을 가지는 DNA분자를 형틀로 이용한 황화구리 나노선의 합성 및 배열기술을 연구하였다. DNA 나노구조물을 기반으로 다양한 형태의 나노구조물 형성이 가능하다는 장점과 반도체성 물질인 황화구리와의 결합 특성을 이용하여 나노선 및 나노소자를 제작하는 기술을 확보하였다.
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Diagnostic X-ray system has been contributed to wiping out disease to get a good quality images from patients. But, X-ray radiation could be exposed to patient and it is very harmful to the patient. In order to reduce being bombed, the many research and development is now advanced. This research has produced the high voltage occurrence system of full-wave rectification method by using the LC resonance inverter, and evaluated the irradiation reproducibility in order to use it in diagnosis of the patient.
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we have studied that a effect depending on dielectric properties of epoxy resin mixing filler nano/micro. When compare with nano/micro composite and virgin, the nano/micro composite is better than virgin. A specimen mixing nano/micro is changed as temperate, however the width of change is low.
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The fabricated the nanostructural patterns on the surface of SiN antireflection layer of polycrystalline Si solar cell using anodic aluminum oxide (AAO) masks in an inductively coupled plasma(ICP) etching process. The AAO nanopattern mask has the hole size of about 70~75nm and lattice constant of 100~120nm. The transferred nano-patterns were observed by the scanning electron microscope (SEM). The voltage of patterned Si solar cell enhanced.
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The generation of energy and the cooling of system using thermoelectric semiconductor material have been in spotlight. Thermoelectric effect increases with the decrease of the thermal conductivity. In the thermoelectric devices, thermal conductivity is related to phonon scattering. Therefore, few studies have been conducted in the thermoelectric materials dispersed nano oxide particle for increasing the phonon scattering. However, core-shell structure which nano particle disperses in solvents and then which thermoelectric materials coated on the nano oxide particles has not been reported. In this study, we selected commercial nano powder such as
$Al_2O_3$ . This nano particle was about 20nm and was crushed aggregate by mechanical treatment. We have developed the effect of the dispersant and the solvent. The properties of particles were evaluated by SEM, TEM, particle size analysis, and BET. Dispersion and dispersion stability were evaluated by electronic microscope and turbidity. -
In this work, the nanocrystalline ZnO/polycrystalline (poly) aluminum nitride (AlN)/Si structure was fabricated for humidity sensor applications based on surface acoustic wave (SAW). In this structure, the ZnO film was used as sensing material layer. These ZnO and AlN(0002) were deposited by so-gel process and a pulse reactive magnetron sputtering, respectively. These experimental results showed that the obtained SAW velocity on AlN film was about 5128 m/s at
$h/\lambda$ =0.0125 (h and$\lambda$ is thickness and wavelength, respectively). For ZnO sensing layers coated on AlN, films have hexagonal wurtzite structure and nanometer particle size. The crystalline size of ZnO films annealed at 400, 500, and 600$^{\circ}C$ is 10.2, 29.1, and 38 nm, respectively. Surface of the film exhibits spongy which can adsorb steam in the air. The best quality of the ZnO film was obtained with annealing temperature at 500$^{\circ}Cis$ . The change in frequency response (127.9~127.85 MHz) of the SAW humidity sensor based on ZnO/AlN structure was measured along the change in humidity (41~69%). The structural properties of thin films wereinvestigated by XRD and SEM. -
Electrospinning is one of the simple, cost- efficient methods to produce long continuous semiconducting oxide nanofibers. Polyvinyl Alcohol (PVA) and zinc acetate were used. PVA/Zinc acetate aqueous solutions were electrospun into nonwoven webs. CCD camera, with a lens of long working distance and digital video board were used in capturing the drop and web deposition. The diameter and morphology of nanofibers were analyzed with a Field-emission scanning electron microscopy (FE-SEM). In this study, the average diameter and morphology of nanofibers have been explorered.
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Single-walled carbon nanotubes (SWCNTs) have attracted much attention as promising materials for transparent conducting films (TCFs), thanks to their superior electrical conductivity, high mechanical strength, and complete flexibility. The CNT-based TCFs can be used in a variety of application fields as flexible, transparent electrodes, including touch panel screens, flexible electronics, transparent heaters, etc. First of all, this study investigated the effect of a variety of surfactants on the dispersion of SWCNTs in an aqueous solution. Following the optimization of the dispersion by surfactants, flexible TCFs were fabricated by spraying the CNT suspension onto poly(ethylene terephthalate) (PET) substrates. The sheet resistances of the TCFs having different surfactants were investigated with treatment in nitric acid (
$HNO_3$ ) whose concentration and period of treatment time were varied. It seems that the$HNO_3$ removes the surfactants from and is simultaneously doped into the SWCNT network, reducing the contact resistance between CNTs. TCFs were characterized by UV-VIS spectroscopy, thermogravimetric analyzer (TGA), scanning electron microscopy (SEM), and four-point probe. -
In this work, nonvolatile nano-floating gate memory devices were fabricated with ZnO films and Al nanoparticles using the sputtering method on a glass substrate. Al nanoparticles acted as floating gate nodes in the devices. The fabricated device exhibits a threshold voltage shift of 1.7 V.
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This paper presents a proper condition to achieve above 17 % conversion efficiency using PC1D simulator. Crystalline silicon wafer with thickness of
$240{\mu}m$ was used as a starting material. Various efficiency influencing parameters such as rear surface recombination velocity and minority carrier diffusion length in the base region, front surface recombination velocity, junction depth and doping concentration in the Emitter layer. Among the investigated variables, we learn that 2nd doping concentration as a key factor to achieve conversion efficiency higher than 17 %. -
This paper explores a control of recombination velocity for optimization the crystalline solar cell. Using PC1D simulator, the efficiency of crystalline solar cell was measured to be about 17%. The results show that the lower the front recombination velocity is, the more efficiency of crystalline solar cell improves. The work which presented here has profound implications for studies of crystalline solar cell and someday may help solve the problem of optimization for the crystalline solar cells.
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본 연구에서는 P3HT(Poly(3-hexylthiophene-2))와 PCBM ([6,6]-phenyl-C61-butyric acid methyl ester)를 donor, acceptor물질로 사용하고 Toluene, DCB, CB를 용매로 함으로써 각각의 경우에 대한 효율과 특성을 분석하였다. 그 결과, CB을 이용한 태양전지가 후 열처리 과정을 거친 후 가장 높은 효율을 보였으며, 광흡수율 측면에서는 열처리를 하였을 경우와 하지 않은 경우 모두에서 DCB가 뛰어났으나 다른 용매에 비하여 열처리를 통한 성능의 개선 효과는 가장 미비하였다.
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박막태양전지의 효율을 높이기 위한 방법 중 입사된 태양광의 흡수율을 높이기 위한 방법으로 전지의 표면구조를 제어하는 기술이 최근에 활발히 연구되고 있다. 본 연구에서는 박막태양전지의 저가화와 고효율화를 위하여 투명전도막으로 응용되고있는 ZnO박막의 증착속도를 높이는 공정변수의 영향과 수광효과를 개선하기 위하여 최적의 표면구조를 가지는 ZnO박막 증착조건을 찾고자 증착 공정변수에 대하여 실험하였다. 공정변수의 조절에 따라 표면구조의 제어가 가능하였으며 우수한 광학적 특성과 500nm/min 의 높은 증착속도를 얻을 수 있었다. 또한 표면구조와 전기적, 광학적 특성이 긴밀한 관계를 가지는 것을 알 수 있었다. 실험된 공정 변수는 기판온도, 공정압력, 플라즈마 파워, 원료 가스 조성 이며 공정변수에 따른 전기적, 광학적, 구조적, 특성은 FE-SEM, 4Point-probe, XRD, UV-spectroscopy를 이용하여 분석하였다.
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In high-efficiency crystalline silicon solar cell, If high-efficiency solar cells are to be commercialized, It is need to develop superior contact formation method and material that can be inexpensive and simple without degradation of the solar cells ability. For reason of plated metallic contact is not only high metallic purity but also inexpensive manufacture. It is available to apply mass production. Especially, Nickel, Copper are applied widely in various electronic manufactures as easily formation is available by plating. Ni is shown to be a suitable barrier to Cu diffusin as well as desirable contact metal to silicon. Nickel monosilicide has been suggested as a suitable silicide due to its lower resistivitym lower sintering temperature and lower layer stress than
$TiSi_2$ . In this paper, Nickel as a seed layer and diffusion barrier is plated by electroless plating to make nickel monosilicide. -
Anode 지지형 SOFC의 Anode 지지층 제조에 있어 Ni의 입성장이 일어나면 전극의 반응면적이 줄어들어 전기전도도가 감소되므로 소결체의 제조공정이 매우 중요하다. 기공형성제의 함량이 증가할수록 기공율도 증가하였고 기공체의 함량이 20%를 넘어가면서 기공율은 오히려 줄고 밀도도 감소하였다. Anode 지지체는
$1200^{\circ}C$ 이상에서 열처리하여야 입자간 소결이 이루어지며 승온 속도를$2.5^{\circ}C$ 유지하여 20% 수준의 기공률을 형성하였다. 소결한 음극지지체를 환원하였을 때 35%수준의 개기공을 형성하였고 전해질과의 접착성도 우수하였다. -
최근 리튬이차전지가 전지자동차, hybrid car, PHEV, Ev, UPS 저장장치로 사용되기 시작함에 따라 고용량화, 고출력화가 요구되고 있다. 현재까지 주로 사용 되어왔던 carbon으로는 작동전압이 낮고, 고용량화, 고출력화가 어려워 금속산화물, 금속 비정질 금속 및 금속산화물을 carbon과 혼합 사용 함으로써 차세대 전지로서 특성을 달성하고 있다. 따라서 본 연구에서는 음극 소재로서 안정성이 뛰어난 금속산화물로
$Li_4Ti_5O_{12}$ 를 합성할 때 저가의$TiCl_4$ 를 이용$Li_4Ti_5O_{12}$ 가 고밀도를 갖게끔$TiCl_4$ 를 이용 구형의 Ti-precursor(전구체)를 합성한 후 구형의$Li_4Ti_5O_{12}$ 를 합성하였다. Ti전구체는$TiCl_4$ 로부터 합성하였는데 이때 구형을 제조하고자 Hydroxypropyl cellulose(이하 HPC)를 사용하여 반응을 진행하였다. 이때 반응 조건 및 HPC의 몰수 변화에 따른 입자 형상의 변화에 관하여 관찰한 결과,$TiOCl_2$ 0.4mol, 반응온도$10^{\circ}C$ , 유지시간 6시간, HPC양 0.02mol일 때$0.6{\mu}m$ 정도의 구형 Ti-전구체를 합성하였다. 합성된 Ti-전구체와 리튬수화물을 사용하여$Li_4Ti_5O_{12}$ 를 합성 하였고, 상기 물질로 전지특성을 평가하였다. -
The microtstructures and properties of alloys in the pseudo-binary
$Bi_2Te_3-PbTe$ system were investigated as a first step towards the design of nanostructured materials with enhanced thermoelectric properties. The liquid alloys were cooled by water quenching method. Dendritic and lamellar structures were observed clearly by using environmental scanning electron microscope(eSEM) and electron probe micro analyzer(EPMA) take into account composition ratio between$Bi_2Te_3$ and PbTe. The compound$Pb_2Bi_6Te_{11}$ precipitated as a metastable phase under all conditions. The structure of those samples changed from dendritic to lamellar by increasing$Bi_2Te_3$ ratio of composition. -
The sensitivity lighting of pendant type used Micro-controller AVR, embodiment method for Munsell chromaticity diagram system and adoption method for light source lens respectively. About a plan design of light fixture, LED circuit designed flow chart of circuits and LED driver of organizations in electron device. For used Solidworks soft ware program, LED light source must take a heat shink part and LED light fixture module for sensitivity lighting of pendant type into considerations
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전기이중층 커패시터 전극으로 사용하는 활성탄에 도전제로서 CNT와 super-p의 함량에 따른 이중층 커패시터의 특성을 연구하였다. CNT 함량이 4wt%까지는 도전제로서 CNT 함량이 증가할 수록 용량이 감소하는 반면 6wt%이상에서는 CNT 함량이 증가할 수록 단위 체적당 정전용량이 증가하였다. 충, 방전 특성과 직류 저항도 정전용량의 경향과 유사함을 보이고 있으며 이와 같은 결과는 비표면적이나 도전율에 의한 결과 보다는 분산성에 의한 결과로 예상된다. Super-p 10.5wt%, CNT 6.0wt%에서 단위 체적당 정전용량은
$22g/cm^3$ , 직류저항 6.1[$\Omega$ ]의 전기이중층 커패시터 특성을 얻을 수 있었다. -
For the development of hybrid supercapacitor, increasing energy density is one of the most crucial matters. Since the energy density is the function of capacitance and voltage, it is necessary to enhance energy density for increasing capacitance or voltage. For the high working voltage, it was to enforce Li ion free-doping to activated carbon. As a result, initial capacitance has increased by 11% than raw cell. But capacitance has decreased by Li ion re-solution to electrolyte for increase the number of cycle.
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Solar cells with CIGS absorber layers have proven their suitability for high efficiency and stable low cost solar cells. We prepared and characterized particle based CIGS thin film using a non-vacuum processing. CIGS powder were obtained at
$240^{\circ}C$ for 6 hours from the reaction of$CuCl_2$ ,$InCl_3$ ,$GaCl_3$ , Se powder in solvent. The nanoparticle precursors were mixed with binder material. The CIGS thin film deposited on a sodalime glass. The CIGS thin film were identified to have a typical chalcopyrite tetragonal structure by using UV/Visible-spectroscopy, X-ray diffraction(XRD), Auger Electron Spectroscopy(AES), Scanning Electron Microscopy(SEM). -
Li-Mn spinel의 고온수영 특성을 향상을 위해 졸-겔법으로
$V_2O_5$ 를 Li-Mn spinel 표면에 코팅을 하였다.$V_2O_5$ 의 코팅양은 1, 3, 5wt%로 조절하여 코팅 양에 따른 특성변화를 조사하였다. XRD분석결과$V_2O_5$ 가 코팅된 Li-Mn spinel을$400^{\circ}C$ 에서 열처리시$Mn(VO_3)_2$ 가 생성되는 것을 확인하였다. 충방전 테스트결과, 고온에서$V_2O_5$ 를 코팅한 Li-Mn spinel이 우수한 수명을 나타냈다. 하지만 코팅량이 1wt%까지는 용량의 변화가 거의 없었고, 5wt% 코팅시 현격히 용량이 감소하였다. -
염료감응형 태양전지는 다공질
$TiO_2$ 전극막, 광감응형 염료, 전해질로 구성된 전기화학적 원리를 이용한 태양전지이다. 전해질은 전자가 빠져나간 염료에 전자를 공급하고$PtCl_4$ 로부터 전자를 공급받아 산화/환원 반응을 한다.$PtCl_4$ 는 하부 기판에서 전자를 전해질에 제공한다. 본 연구에서는 Sealant를 이용하여 전해질의 면적이 효율에 어떤 영향을 미치는지 관찰하였다. AM 1.5 (100$mW/cm^2$ )하에서의 광 에너지로 측정한 효율은 전해질 면적이 1$cm^2$ 일 때 가장 높은 4.46%의 효율이 나타났다. -
The surface texturing technology is one of the methods to improve the efficiency of crystalline silicon solar cell. This process reduced the reflectance at the surface by the so-called double bounce effect and increased the light trapping. Among these surface texturing technology, the laser texturing is effective for multi-crystalline silicon solar cells which have random crystallographic directions. We investigated the characteristics of laser processing on the surface of the multi-crystalline silicon solar cells using the fiber laser.
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AAO(Anodic Aluminum Oxide)는 전형적인 자기정렬 되는 물질로 이루어진 나노 다공성 구조이며 많은 나노 기술적으로 응용이 되고 있다. 양극산화 알루미나 기술은 간단한 공정으로 경제적이며 규칙적인 배열의 나노 크기의 육각형의 셀 형태의 hole구조를 형성할 수 있는 장점을 가지고 있다. 이런 나노 다공성 구조는 나노 단위의 물질을 형성하는 Template로 유용하게 쓰인다. 균일한 대면적 AAO의 형성을 위한 공정 step의 개선, 공정변수의 영향에 대하여 연구 중이며 공정변수의 조절에 따라 hole의 직경, 길이, 균일성을 제어 가능하며 제작된 AAO의 특성은 FE-SEM, AFM을 이용하여 분석한다.
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Screen-printing metal contact is typically applied to the solar cells for mass production. And metal paste is used widely for rear contact formation of silicon solar cells. However, Screen-printing solar cell metal paste contact has low aspect ratio, low accuracy, high resistivity, hard control of unclean process. In this paper is to develop resistivity of rear contact for silicon solar cells applications. 4-point prove result, This resistivity of rear contact by Al evaporation was measured about
$3.56{\times}10^6{\Omega}{\cdot}cm$ less than screen printed solar cell about$52.6{\times}10^6{\Omega}{\cdot}cm$ . -
고체산화물 연료전지 (Solid Oxide Fuel Cell, 이하 SOFC)는 제조형태에 따라 크게 평판형과 원통형으로 구분할 수 있다. 단위면적당 출력 효율이 높은 평판형의 장점과 원통형의 밀봉이 용이한 장점을 동시에 가지는 평관형 형태로 지지체를 제작하였으며, 셀의 배치를 평면상 직렬로 연결하는 다전지식으로 구성함으로 전극의 길이나, 셀 간격을 기존 평판형이나 원통형에 비해 대폭 감소시켜 단위면적당 전압 및 출력효율을 높이고자 하였다. Segmented 평관형 지지체의 소재로는 연료전지의 성능 특성에 관여하지 않으며 열사이클 저항성과 기계적 강도가 우수한 spinel구조를 가지는
$MgAl_2O_4$ 를 선정하였다. 연료가스의 원활한 공급이 가능하도록 carbon을 기공 전구체로 사용하여 압출성형하였으며 건조과정에서 crack이 생기지 않는 공정을 확립한 후$1400^{\circ}C$ 에서 소결하였다. 제조된 지지체는 수은침투법과 3점 굽힘 강도법으로 기공율과 기계적 강도를 각각 측정하였다. Anode를 스크린 프린팅법으로 지지체 위에 적층한 후 미세구조를 확인하였고 이를 바탕으로 다공성이며 기계적 강도를 가지고 음극과의 반응이 없는 우수한 지지체를 제조할 수 있었다. -
고효율 결정질 실리콘 태양전지 구조를 갖기 위해서는 기본적으로 광포획 기능이 고려된 기판이 고려되어야 한다. 본 실험에서는 2-step 습식공정을 이용하여 기판의 반사율을 기존 대비 절반 이하로까지 줄일 수 있는 저반사율을 갖는 표면구조를 얻을 수 있었다. 일반적인 텍스처링 공정을 NaOH와 TMAH등을 이용하여 10um이하의 피라미드 구조를 통해 평균반사율을 10~13%수준을 얻었고, metal assist etching을 이용하여 추가적인 나노 텍스처링을 적용하였다. 전체적인 2-step에칭을 적용하여 평균 반사율을 5%이하까지 줄일 수 있었다. 이는 전반적으로 나노구조 형성으로 인하여 단파장쪽의 반사율이 적게 나오고 IR 파장쪽의 반사율도 같이 낮아짐으로써 저반사율이 달성되었다. 2-step을 이용한 나노 텍스처링 공정 최적화와 반사방지막을 증착하여 이에 대한 효과를 연구하였다.
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CdTe(331)/Si(211) and CdTe(400)/Si(100) thin films have been grown by MOCVD(metal organic chemical vapor deposition) system for large scale of IFPAs(IR focal plane arrays). We have investigated the effect of various growth parameters on the surface morphology and structural quality. Single crystalline CdTe(331) films were grown by two stage growth method - low temperature buffer layer step and high temperature growth step. In other case, single crystal of CdTe(400) films were grown on a few atomic layer thickness of GaAs which is grown on Si(100) substrate by molecular beam epitaxy. The crystalline quality of the films was analyzed by X-ray diffraction. The surface morphology and crystal structure of CdTe films were characterized by optical microscope.
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Solar cells has been studied mainly the high efficiency and lower prices. Using recycling wafer as a way to realize their money in it, there is a way to manufacture a solar cell substrate. How to play the recycling wafer, CMP(Chemical Mechanical Polishing) and remelting process is the complex and the expensive equipment. However, using the Micro-Blaster, the process easier, and cheaper prices. Micro-Blaster confirmed that the remaining amount of material left after the process recycling wafer surface.
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In this paper, PMPG (Piezoelectric Micro Power Generator) was investigated by ANSYS FEA (Finite Element Analysis) to decrease operating frequency and improve out power. The micro power generator was designed to convert ambient vibration energy to electrical power as a ZnO piezoelectric material. To find optimal model in low vibration ambient, the shape of power generator was changed with different membrane width, thickness, length, and proof mass size. Used the ANSYS modal analysis, bending mode and stress distribution of optimal model were analyzed. Also, the displacement with the frequency range was analyzed by harmonic analysis. From the simulation results, the resonance frequency of optimal model is about 373 Hz and confirmed the possibility of ZnO micro power generator for wireless sensor node applications.
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A photovoltaic device consisting of arrays of radial p-n junction wires enables a decoupling of the requirements for light absorption and carrier extraction into orthogonal spatial directions. Each individual p-n junction wire in the cell is long in the direction of incident light, allowing for effective light absorption, but thin in orthogonal direction, allowing for effective carrier collection. To fabricate radial p-n junction solar cells, p or n-type vertical Si wire cores need to be produced. The majority of Si wires are produced by the vapor-liquid-solid (VLS) method. But contamination of the Si wires by metallic impurities such as Au, which is used for metal catalyst in the VLS technique, results in reduction of conversion efficiency of solar cells. To overcome impurity issue, top-down methods like noble metal catalytic etching is an excellent candidate. We used noble metal catalytic etching methods to make Si wire arrays. The used noble metal is two; Au and Pt. The method is noble metal deposition on photolithographycally defined Si surface by sputtering and then etching in various BOE and
$H_2O_2$ solutions. The Si substrates were p-type ($10{\sim}20ohm{\cdot}cm$ ). The areas that noble metal was not deposited due to photo resist covering were not etched in noble metal catalytic etching. The Si wires of several tens of${\mu}m$ in height were formed in uncovered areas by photo resist. The side surface of Si wires was very rough. When the distance of Si wires is longer than diameter of that Si nanowires are formed between Si wires. Theses Si nanowires can be removed by immersing the specimen in KOH solution. The optimum noble metal thickness exists for Si wires fabrication. The thicker or the thinner noble metal than the optimum thickness could not show well defined Si wire arrays. The solution composition observed in the highest etching rate was BOE(16.3ml)/$H_2O_2$ (0.44M) in Au assisted chemical etching method. The morphology difference was compared between Au and Pt metal assisted chemical etching. The efficiencies of radial p-n junction solar Cells made of the Si wire arrays were also measured. -
$LiFePO_4$ 는 낮은 전기전도도로 인하여 전이금속의 도핑과 카본코팅으로 전기화학적 특성을 향상시키려는 연구가 많이 되어 왔다. 또한 다양한 합성법으로$LiFePO_4$ 의 입자사이즈를 최적화 하기 위해 많은 연구가 진행중이다. 특히 고상 합성법은 결정의 미세화가 가능하고, 상온에서 쉽고 용이하게 원소간의 합금화 및 화학반응을 유도하는 등의 장점으로 인해 가장 널리 사용하고 있는 합성법중 하나이다. 이번 연구에서도 고상합성법을 사용하여$LiFePO_4$ 를 합성했으며, 카본소스로서 카르복시산등의 유기산을 사용하여 코팅을 시도해 보았다. 이렇게 합성된$LiFePO_4$ 의 물리적 측정을 통하여 입사의 형상 및 크기를 관찰하였고, 하프셀을 구성하여 전기화학적 특성을 확인하였다. -
In a structure of ITO/CuPc/Al, we have studied that the properties of photovoltaic efficiency of copper phthalocyanine(CuPc) in donor layer using simulation. As a rusult, we have confirmed that anode current density is decreased and anode voltage is increased as increasing the thickness of CuPc. Also, when the light intensities is 10 [
$mW/cm^2$ ], the external quantum efficiency is better than the others at the best wavelength of visible spectrum.. -
본 연구는 전력선통신과 LED를 이용한 단거리 무선통신 시스템개발을 목적으로 하고 있으며, 가시광 무선통신은 전자파 영향이 전혀 없는 가시광을 이용해 정보를 전달하는 무선 통신 기술이다. 실험 방법은 광 검출기를 통하여 나온 수신 데이터를 오실로스코프를 통하여 신호 및 파형을 관찰한다. 그러나 거리와 위치 및 환경적인 조건에 따른 Noise나 Coverage Area의 신호 저해의 요소 등에 의해 정확한 측정 값을 얻지 못할 수 있다. 이러한 실험을 통해 가시광통신 시스템의 문제점을 보완하고 전력 손실에 대한 지속적인 연구 및 개선이 필요하다.
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Forest Fire can cause a serious damage to overhead conductors. Therefore, the detailed investigation for the changes of mechanical and electrical properties of damaged conductors should be carried out to understand the effect of forest fires on conductors. This is very important to maintain transmission line safely. Specimenes for this study were Al conductores of ACSR
$410mm^2$ , ACSR 480 R and ACSR$240mm^2$ . This paper describes the changes of mechanical and electrical properties of same flame exposed Al conductor. The detailed will be given in the text. -
Composition environments - Automatic Control System based on Sproute Cultivator using Remote Conditional Driving System was realized. It was carried out to investigate into the characteristics of LEDs Control for the cultivation of sprouts. We have also composed a Combined Automatic Control System possible for the control of temperature and humidity at the same time. The applied LEDs for measurement are blue, green, red, white, yellow leds. And we had also designed the Web Programming for the automatic control about sprout cutivators.
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The LED of cultivation edible plants was compliance the variable of the photo-receptor pigment with the red light source and ultra red light source from long wave region. The mechanism of cultivation edible plants for each part was necessary the wavelength unit which is appropriate, the illuminant source, motor control and lens design of LED light source about plant. The photo-receptor pigment induces for a long daytime recognition, seed germination and anthesis etc, induction years exists in the state which is an inactivity within the cells and in compliance with the red light source to be converted in active
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Due to a development of a modem technology as Power Line Communication(PLC) over 200 Mbps, the high-speed multi-media data trasmission could be currently possible. In This paper we develop a high quality media transmitter-receiver based on merging the HomePlug AV, which is 200 Mbps class PLC technology and HDMI Interface technology. Smart Live 6 software were used for the assessment of audio property. As the result of measurement of the HD class images by capturing from the receiver of the PLC, the quality of images couldn't be confirm any deterioration, which has compared with original reflections. In case of audio part as the result of confirmation of the Phase, Magnitude, it has been confirmed that over 90% of nomal transmition and receiving of acoustic signal.
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According to previous report, aged sleeves for old transmission lines have various defect such as biased installation or corrosion of steel sleeve. These defects can cause serious accidents such as rapid increasing of sag or falling out of overhead conductor from sleeves. Moreover, the defects have been limited power capacity of transmission line. This paper study on mechanical and thermal behavior of ACSR
$410mm^2$ conductor and sleeve with various defect model. The conductor has been aged artificially for 50 years. The detailed results were presented in the text. -
The characteristics of slow wave structure employed for backward wave oscillators expected to be a high power microwave source are studied analytically and experimentary. The slow wave structure is a sinusoidally corrugated wall waveguide The dispersion relationn and transmitted characteristics for microwaves are measured in the air. There exist literatures on high efficiency of enhanced radiation from backward wave oscillators involving plasma studied experimentally.
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Most of Static electricity forms part of our daily experience broadly. Most people have noticed from time to time electric shocks when closing of their car or after walking across a carpet, operating shredder in winter and touching a metal handle. This electrostatic discharge nuisance is normally a minor inconvenience, but in some cases static electricity can cause more serious problems. Static electricity can also be harnessed to good effect in Position Control System.
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The series hybrid propulsion system in bimodal tram consists of CNG engine, generator, inverter, motor and battery as main components. Among them, battery is very important thing to make a hybrid bimodal tram more efficient in driving. Battery pack is composed of 168 LPB(lithium polymer battery) cells, 650Vdc-300A. LPB should be treated with a good consideration in both temperature and overvoltage. This paper had analyzed and investigated the thermal flow and distribution of LPB module(l4 LPB cells) and Pack in simulated environments by commercial thermal analysis tool.