한국전기전자재료학회:학술대회논문집 (Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference)
- 한국전기전자재료학회 2009년도 추계학술대회 논문집
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- Pages.63-63
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- 2009
박막트랜지스터 효율 향상을 위한 ZnO 박막의 특성에 대한 연구
- 발행 : 2009.11.12
초록
Many researchers have been studied as active and transparent electrode using ZnO (Zinc oxide) inorganic semiconductor material due to their good properties such as wide band-gap and high electrical properties compared with amorphous-Si. In this study, we fabricated ZnO films by the RF magnetron sputtering method at a low temperature for a channel layer in thin-film transistor (TFT) and investigated the characteristics of sputtered ZnO films. Also, the electrical properties of TFT using ZnO channel layer such as field effect mobility(