한국전기전자재료학회:학술대회논문집 (Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference)
- 한국전기전자재료학회 2009년도 추계학술대회 논문집
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- Pages.278-278
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- 2009
Noble metal catalytic etching법으로 제조한 실리콘 마이크로와이어 태양전지
The Si Microwire Solar Cell Fabricated by Noble Metal Catalytic Etching
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Kim, Jae-Hyun
(Daegu Gyeongbuk Institute of Science and Technology) ;
- Baek, Sung-Ho (Daegu Gyeongbuk Institute of Science and Technology) ;
- Choi, Ho-Jin (Daegu Gyeongbuk Institute of Science and Technology)
- 발행 : 2009.11.12
초록
A photovoltaic device consisting of arrays of radial p-n junction wires enables a decoupling of the requirements for light absorption and carrier extraction into orthogonal spatial directions. Each individual p-n junction wire in the cell is long in the direction of incident light, allowing for effective light absorption, but thin in orthogonal direction, allowing for effective carrier collection. To fabricate radial p-n junction solar cells, p or n-type vertical Si wire cores need to be produced. The majority of Si wires are produced by the vapor-liquid-solid (VLS) method. But contamination of the Si wires by metallic impurities such as Au, which is used for metal catalyst in the VLS technique, results in reduction of conversion efficiency of solar cells. To overcome impurity issue, top-down methods like noble metal catalytic etching is an excellent candidate. We used noble metal catalytic etching methods to make Si wire arrays. The used noble metal is two; Au and Pt. The method is noble metal deposition on photolithographycally defined Si surface by sputtering and then etching in various BOE and
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