한국전기전자재료학회:학술대회논문집 (Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference)
- 한국전기전자재료학회 2009년도 추계학술대회 논문집
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- Pages.8-8
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- 2009
Study on the change of performance of a-IGZO TFTs depending on processing parameters
- Jeong, Yu-Jin (KIST) ;
- Jo, Gyeong-Cheol (KIST) ;
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Lee, Jae-Sang
(KIST) ;
- Lee, Sang-Ryeol (KIST)
- 발행 : 2009.11.12
초록
Thin-film transistors (TFTs) were fabricated using amorphous indium gallium zinc oxide (a-IGZO) channels by rf-magnetron sputtering at room temperature. We have studied the effect of oxygen partial pressure on the threshold voltage(