한국전기전자재료학회:학술대회논문집 (Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference)
- 한국전기전자재료학회 2009년도 추계학술대회 논문집
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- Pages.67-67
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- 2009
Dry Etching of $Al_2O_3$ Thin Film in Inductively Coupled Plasma
- Xue, Yang (School of Electrical and Electronic Engineering, Chung-Ang Univ.) ;
- Um, Doo-Seung (School of Electrical and Electronic Engineering, Chung-Ang Univ.) ;
- Kim, Chang-Il (School of Electrical and Electronic Engineering, Chung-Ang Univ.)
- 발행 : 2009.11.12
초록
Due to the scaling down of the dielectrics thickness, the leakage currents arising from electron tunneling through the dielectrics has become the major technical barrier. Thus, much works has focused on the development of high k dielectrics in both cases of memories and CMOS fields. Among the high-k materials,