한국전기전자재료학회:학술대회논문집 (Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference)
- 한국전기전자재료학회 2009년도 추계학술대회 논문집
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- Pages.137-137
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- 2009
박막 트랜지스터 채널용 IGZO 박막의 제작
- 발행 : 2009.11.12
초록
Indium Gallium Zinc Oxide (IGZO) thin films for TFT channel were prepared by using a Facing Target Sputtering (FTS) system. To investigate the effect of oxygen on the optical and the electrical properties of amorphous InGaZnO(a-IGZO), we prepared thin films by FTS system in various oxygen atmospheres at room temperature. As-deposited IZTO thin films were investigated by using a UV/VIS spectrometer, an X-ray diffractometer, a Hall Effect measurement system, and an atomic force microscope. The quantitative analysis of the films was carried out by using the energy dispersive X-ray (EDX) technique for the as-deposited film.