Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference (한국전기전자재료학회:학술대회논문집)
The Korean Institute of Electrical and Electronic Material Engineers
- Annual
2004.07a
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In this paper, a new small sized Lateral Trench Electrode Power MOS was proposed. This new structure, called LTEMOS(Lateral Trench Electrode Power MOS), was based on the conventional lateral power MOS. But the entire electrodes of LTEMOS were placed in trench oxide. The forward blocking voltage of the proposed LTEMOS was improved by 1.5 times with that of the conventional lateral power MOS. The forward blocking voltage of LTEMOS was about 240 V. At the same size, an improvement of the forward blocking voltage of about 1.5 times relative to the conventional MOS was observed by using ISE-TCAD which was used for analyzing device's electrical characteristics. Because all of the electrodes of the proposed device were formed in each trench oxide, the electric field was crowded to trench oxide and punch-through breakdown was occurred, lately.
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The reliability of 1.550m-wavelength InGaAs mesa waveguide photodiodes(WGPDs), which developed for 40-Gbps optical receiver applications, fabricated by metal organic chemical vapor deposition is investigated. Reliability is examined by both high-temperature storage tests and the accelerated life tests by monitoring dark current and breakdown voltage. The median device lifetime and the activation energy of the degradation mechanism are computed for WGPD test structures. From the accelerated life test results, the activation energy of the degradation mechanism and median lifetime of these devices in room temperature are extracted from the log-normal failure model by using average lifetime and the standard deviation of that lifetime in each test temperature. It is found that the WGPD structure yields devices with the median lifetime of much longer than
$10^6$ h at practical use conditions. Consequently, this WGPD structure has sufficient characteristics for practical 40-Gbps optical receiver modules. -
The electrical properties of gate oxides grown in two different processes, which are in 10% nitrous oxide(
$N_2O$ ) and in dry oxygen, have been experimentally investigated and compared. It has been observed that the$SiC-SiO_2$ interface-trap density(Dit) measured in nitrided gate oxide has been tremendously reduced, compared to the density obtained from gate oxide grown in dry oxygen. The beneficial effects of nitridation on gate oxides also have been demonstrated in the values of total near interface-trap density and of forward-bias breakdown field. The reasons of these improvements have been explained. -
As the integrated circuit device shrinks to the smaller dimension, the chemical mechanical polishing(CMP) process was required for the global planarization of inter-metal dielectric(IMD) layer with free-defect. However, as the IMD layer gets thinner, micro-scratches are becoming as major defects. Chemical-Mechanical polishing(CMP) of conductors is a key process in Damascene patterning of advanced interconnect structure. The effect of alternative commercial slurries pads, and post-CMP cleaning alternatives are discuss, with removal rate, scratch dentisty, surface roughness, dishing, erosion and particulate density used as performance metrics. Electroplated copper deposition is a mature process from a historical point of view, but a very young process from a CMP perspective. While copper electro deposition has been used and studied for decades, its application to Cu damascene wafer processing is only now gaining complete acceptance in the semiconductor industry. The polishing mechanism of Cu-CMP process has been reported as the repeated process of passive layer formation by oxidizer and abrasion action by slurry abrasives. however it is important to understand the effect of oxidizer on copper passivation layer in order to obtain higher removal rate and non-uniformity during Cu-CMP process. In this paper, we investigated the effects of oxidizer on Cu-CMP process regarding the additional volume of oxidizer.
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ZnS nanoparticles were synthesized and doped with
$Pr^{3+}\;and\;Mn^{2+}$ . Photoluminescence(PL) peaks were observed at 430 nm for pure ZnS, 585 nm for$Mn^{2+}-doped$ ZnS, and at around 430, 460, 480, 495 nm for ZnS nanoparticles doped with$Pr^{3+}$ , respectively. For co-doped sample, both characteristics of doping with each element were exhibited. Optical annealing through UV irradiation was carried out in the two atmospheres; air and vacuum. The increases of the luminescence intensity was more considerable in the air, which is attributed to the photo-induced oxidation. In the case of co-doped sample the change of the emission color was observed by UV annealing. -
In this paper, degradation in field-aged PV modules including degradation of interconnect, discoloration of encapsulant and hot spot have been observed and analyzed. From the results, photovoltaic module installed for 6 years shows around 16% drop of electrical properties due to the interconnect degradation and PV module passed 18 years has been found to drop of around 20% mainly by the encapsulant discoloration. Furthermore the difference between low and high temperature of PV array at hot spot goes up to
$30^{\circ}C$ and it leads to interconnect degradation. On the other hands, the temperature difference was observed to be around$15^{\circ}C$ at the encapsulant discoloration spot of PV array. -
The process modeling for the growth rate in pulsed laser deposition(PLD)-grown ZnO thin films is investigated using neural networks(NNets) and the process recipes is optimized via genetic algorithms(GAs). D-optimal design is carried out and the growth rate is characterized by NNets based on the back-propagation(BP) algorithm. GAs is then used to search the desired recipes for the desired growth rate. The statistical analysis is used to verify the fitness of the nonlinear process model. This process modeling and optimization algorithms can explain the characteristics of the desired responses varying with process conditions.
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SONOS를 이용한 전하트랩형 플래시 메모리를 통상의 0.35um CMOS 공정을 이용하여 제작하였으며 그 구조는 소스를 공통(CSL. Common Source Line)으로 사용하는 NOR형으로 하였다. 기존의 공정을 그대로 이용하면서 멀티 비트 동작을 통한 실질적 집적도 향상을 얻을 수 있다면 그 의미가 크다고 하겠다. 따라서 본 연구에서는CSL-NOR형 플래시 구조에서 멀티 비트을 구현하기위한 최적의 프로그램/소거/읽기 전압 조건을 구하여 국소적으로 트랩된 전하의 분포를 전하펌핑 방법을 이용하여 조사하였다. 또한 이 방법을 이용하여 멀티 비트 동작 시 문제점으로 제시된 전하의 측면확산을 측정하였다.
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Dielectric thin films of
$(Pb_{0.72}La_{0.28})Ti_{0.93}O_3$ were deposited on$Pt(111)/Ti/SiO_2/Si$ substrates in situ by pulsed laser deposition(PLD) and annealed with different gases which are forming gas and oxygen gas, respectively. The diffusion of hydrogen into the ferroelectric film was caused by annealing process and resulted in the destruction of polarization. The dielectric properties of forming gas annealed PLT thin films, which are dielectric constant, ferroelectric characteristic, and leakage current characteristics, were degraded -
단일 나노선 연구에 있어서 나노선에 원하는 패턴을 선택적으로 구현하는 새로운 방법을 소개한다. 기존에 많이 쓰였던 SEM(Scanning Electron Microscope) 사진을 통한 나노선의 위치를 찾는 방법은 전자빔에 의해 유도되는 비결정성 탄소입자 등으로 인해 측정하고자하는 나노선의 전기적 특성을 왜곡시킬 수 있다. 이러한 점을 예방하고 작업의 편리성을 위하여 ER(E-beam Resist)이 코팅된 상태에서 바로 SEM을 이용해 패터닝하는 방법을 고안하였다. 또 다른 방법으로 기존의 AFM(Atomic Force Microscope) 사진으로 위치를 찾는 방식의 단점인 긴 작업시간을 개선하기 위해 광학현미경 사진을 이용해 패터닝하는 방법을 고안하였다. 이러한 방법들은 작업의 편리성이나 패턴의 정확도면에서 서로 보완적인 성격을 가지고 있어 필요에 따라 방법을 선택할 수 있다.
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In this paper the importance of re-nitridation on a plasma-enhanced chemical-vapor deposited(PECVD)
$SiO_2$ stacked on a thermally grown thin-nitrided$SiO_2$ on n-type 4H SiC have been investigated. Without the final re-nitridation process, the leakage current of metaloxidesemiconductor(MOS) was extremely large. It is believed that water and carbon, contamination from the low-thermal budget PECVD process, are the main factors that destroyed the high quality thin-buffer nitrided oxide. After re-nitridation annealing, the quality of the stacked gate oxide was improved. The reasons of this improvement are presented. -
In this paper, we examined channel charge which occurs in electron accumulation after electron velocity saturation. Generally, short gate GaAs MESFET show, saturated electron velocity leading to current salutation. When electron velocity is saturated, deletion layer is stil open channel and it play a key role in deciding saturation current mode we proposed channel charge model in channel after electron velocity saturation.
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HgTe and HgTe/CdTe core-shell structured nanocrystals(NCs) were synthesized in aqueous solution by colloidal method. HgTe and HgTe/CdTe NCs structure showed very similar XRD patterns because of the same lattice constant and crystal structure of both samples. The absorption and photoluminescence(PL) spectrum of the synthesized HgTe NCs revealed the strong exitonic peak in the IR region. The PL spectrum of HgTe/CdTe NCs have the intense peak in about 700nm shorter than that of HgTe by 400nm. The photocurrent measurement of colloidal NCs are performed using He-Ne laser for light source. The photocurrent of HgTe NCs shows the instant increased current response to light, but HgTe/CdTe NCs revealed a decreased current when lighted to the sample. In the vacuum condition, it shows reverse result that current increased under the illumination of light and it is thought that the molecules like the hydro-oxygen gas in the air give an important effect on the current mechanism.
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CdTe nanoparticles were synthesized in aqueous solution by colloidal method. The absorption and photoluminescence(PL) spectrum of the synthesized CdTe nanoparticles revealed the strong exitonic peak in the visible region. Electroluminescence of CdTe nanoparticles were observed in the structure of Al/CdTe/PVK/ITO and Al/CdTe/PEDOT/ITO that were fabricated by spin coating of polyvinylcarvazole(PVK), poly(3,4-ethylenedioxythiophene(PEDOT) and CdTe nanoparticles. The turn-on voltages of Al/CdTe/PVK/ITO and Al/CdTe/PEDOT/ITO for electroluminescence were 5V and 6V, respectively. We identified that the reduction of turn-on voltage resulted from the increase of hole injection into the hole transport layer due to lower ionization energy of PEDOT.
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The extraordinary intrinsic properties of SiC have made this material a suitable choice to use in high temperature, high frequency, and high voltage applications. In additional to these, SiC could be employed as the based material for nonvolatile memory applications, mainly due to its extremely low thermal-generation rate at room temperature. In this paper, the reasons of using this material in this particular application is presented and the development of the application over the past fifteen years is reviewed.
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The
$Pb(Zr,Ti)O_3$ thin films were fabricated with$Pb(La,Ti)O_3$ buffers in-situ onto$Pt/Ti/SiO_2/Si$ substrates by pulsed laser deposition technique using a Nd:YAG laser with energy density of$2.5J/cm^2$ , and deposited for 10 minutes at$550^{\circ}C$ of substrate temperature. And then, the films have been annealed at$550^{\circ}C$ in oxygen ambient pressure. The remanent polarization value is increased by using buffer layers but coercive field of films is slightly increased. -
Two different
$SnO_2$ nanomaterials(nanowires and nanobelts) were synthesized from the thermal evaporation of ball-milled$SnO_2$ powders at$1350^{\circ}C$ without the presence of any catalysts, and their structural properties are then investigated by X-ray diffraction, scanning electron microscopy, and transmission electron microscopy. This investigation reveals that the$SnO_2$ nanowires are single-crystalline and their growth direction is parallel to the [100] direction, and that the$SnO_2$ nanobelts are single crystalline and their shape is zigzag. In addition, photoresponse of a single$SnO_2$ nanowire was performed with light above-gap energy, and different characteristics of photoresponse were obtained for the nanowire at ambient atmosphere and in vacuum. -
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$HfO_2$ ] dielectric layers were grown on the p-type Si(100) substrate by metalorganic molecular beam epitaxy(MOMBE). Hafnium$t-butoxide[Hf(O{\cdot}t-C_4H_9)_4]$ was used as a Hf precursor and Argon gas was used as a carrier gas. The thickness of the layers was measured by scanning electron microscopy (SEM) and high-resolution transmission electron measurement(HR-TEM). The properties of the$HfO_2$ layers were evaluated by X-ray diffraction(XRD), high frequency capacitance-voltage measurement(HF C-V), current-voltage measurement(I-V), and atomic force measurement(AFM). HF C-V measurements have shown that$HfO_2$ layer grown by MOMBE has a high dielectric constant(k=19-21). The properties of$HfO_2$ films are affected by various process variables such as substrate temperature, bubbler temperature, Ar, and$O_2$ gas flows. In this paper, we examined the relationship between the$O_2/Ar$ gas ratio and the electrical properties of$HfO_2$ . -
In this paper, the effect of adhesion properties of semiconductive-insulating interface layer of silicone rubber on electrical properties was investigated. Surface structure and adhesion of semiconductive silicon rubber by surface asperity was obtained from SEM and T-peel test. In addition, ac breakdown test was carried out for elucidating the change of electrical property by roughness treatment. From the results, Adhesive strength of semiconductive-insulation interface was increased with surface asperity. Dielectric breakdown strength by surface asperity decreased than initial Specimen, but increased from Sand Paper #1200. According to the adhesional strength data unevenness and void formed on the silicone rubber interface expand the surface area and result in improvement of adhesion. Before treatment Sand Paper #1200, dielectric breakdown strength was decreased by unevenness and void which are causing to have electric field mitigation small. After the treatment, the effect of adhesion increased dielectric breakdown strength. It is found that ac dielectric breakdown strength was increased with improving the adhesion between the semiconductive and insulating interface.
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Colloidal Silica(CS) HSA/2327과 methyltrimethoxysilane(MTMS), 1034A와 tetramethoxysilane(TMOS)/MTMS 간의 졸겔 반응조건이 코팅도막의 특성에 미치는 영향을 조사하기 위하여 CS종류, CS 대비 TMOS/MTMS의 함량비, 반응시간 등을 달리하여 졸을 합성하고, 합성된 졸을 slide glass에 코팅한 후
$300^{\circ}C$ 에서 경화시킨 도막의 특성들을 조사하였다. HSA/2327/MTMS에 의한 졸로부터 제조된 코팅도막은 졸 반응시간 의존성이 거의 없으며 반응초기부터 접촉각이 상당히 안정되어 있고 특히 낮은 MTMS 함량을 가진 졸들이 더욱 안정된 표면물성을 보였다. 1034A/TMOS/MTMS에 의해서 제조된 코팅도막은 적절한 소수성의 형성과 표면조도의 향상과 더불어 안정된 접촉각 양상을 나타내었다. 표면거칠기는 HSA/2327 혼합 CS계에 의해서는 반응시간이 길고 MTMS 함량이 높아질 때 비교적 표면조도가 나빠지는데 반응시간과 더불어 약간씩 증가하는 경향을 보였다. 1034A CS계에서는 반응시간과 MTMS 함량의 조건에 영향을 받지 않고 표면조도와 균질성이 우수하였다. -
To estimate a electrical performance of the extra high voltage XLPE cable the discharge properties due to shift of void position were investigated. The
${\phi}-q-n$ properties have been measured at room temperature by rising voltage ratio of 0.5[kV]. An obtained data was stored to personal computer through A/D converter. The period of applied wave form and discharge values were divided into 64 parts and discharge values generated during 10 seconds were accumulated by phases. As a result, it was confirmed that the charge, phase angle and counts of discharge changed due to void position. -
Suspension effect has been studied by using superconductor of BiPbSrCaCuO ceramics containing
$Ag_2O$ . It has been cleared that$Ag_2O$ acts as pinning center which plays an important role to the suspension effect. Magnetic repulsive force which affects a superconductor located in magnetic flux from toroidal magnet has been investigated. It has been concluded that the suspension effect arises from the interaction between the pinning effect and the diamagnetic effect. -
Ko, Rock-Kil;Chung, Jun-Ki;Kim, Ho-Sup;Ha, Hong-Soo;Shi, Dongqi;Park, Yu-Mi;Choe, Su-Jeong;Song, Kyu-Jeong;Yoo, Sang-Im;Moon, Seung-Hyun;Park, Chan 93
다층의 산화물 박막 구조를 갖는 coated conductor의 장선 제조를 위해서는 연속 증착 공정이 필요하다. 본 연구에서는 RABiTs와 IBAD 공정을 사용한 texture template을 사용하였으며, 금속 테잎을 연속적으로 이동하면서 증착할 수 있는 박막증착 장치(PLD, sputtering, evaporation)를 구축하여 PVD 방법으로 coated conductor를 제조하였다.$CeO_2/YSZ/Y_2O_3$ 의 완충층을 sputtering 과 evaporation을 이용하여 2축배향성을 가지는 NiW 위에 연속적으로 증착하였다. YBCO 초전도층은 연속 PLD 방법으로 증착하고, Tc, Ic, XRD, SEM을 통해 그 특성을 분석하였다. 그 결과 RABiTS template을 사용하여 Ic가 34A/cm(@77K)인 0.4m 길이의 coated conductor를 제조하였다. IBAD template를 사용하여 Ic가 34A/cm(@77K)인 0.5m길이의 coated conductor를 제조하였고, Jc는$1.2MA/cm^2$ 이였다. -
In this paper, the preparation of BSCCO superconducting wire by electrophoretic deposition method and the effect of suspension medium used with various solvent solutions of ethanol and buthanol for electrophoretic deposition were studied. The preheating technique in vacuum system for the superconducting powders coated on Ag wire was also investigated. As a result, it was confirmed that the preheating technique was very useful to remove the influence of remains affected to the surface conditions of superconducting wire. And the adsorbed solvent solution which was existed between and on the deposited particle surfaces was almost disappeared at the treating conditions of about
$10^{-3}$ Torr and around$200^{\circ}C$ in bell-jar system. By measurement of 4-point prove method, the critical current density($J_c$ ) of BSCCO superconducting wire was obtained at the value of more than$10^4\;A/cm^2$ in liquid$N_2$ (77 K, 0 T). -
We have fabricated a channel of superconducting flux flow transistor(SFFT) using the voltage-biased atomic force microscope(AFM) TiO tip and performed numerical simulations for the SFFT controlled by the magnetic field with a control current. The critical current density in a channel of the fabricated SFFT was decreased with the applied current by a control line. By comparing the measured with theoretical results, we showed a possibility of fabrication of an SFFT with a nano-channel using AFM anodization process technique.
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[
$BaTi_4O_9$ ]계 유전체 박막을 Si 기판위에 RF Sputtering으로 성장시켜 유전체 박막의 두께 변화에 따른 마이크로파 대역에서 유전체 박막의 유전율 및 유전손실을 측정하였다. 유전체 박막의 두께가 증가함에 따라 유전율은 약간 증가하였으며 마이크로파 대역에서 벌크 유전체와 같은 38의 유전율 값을 얻을 수 있었다. 또한 probe와 상두 전극사이의 접촉 저항을 고려한 값들을 보정함으로서 6GHz의 주파수 대역까지$BaTi_4O_9$ 박막의 유전손실 값을 안정적으로 측정한 수 있었으며 유전체 박막의 두께가 증가함에 따라 최대 0.0001의 양호한 유전손실 값을 얻을 수 있었다. -
ZnO varistor ceramics which were fabricated with variation of added of
$0.5{\sim}1.0mol%\;Co_3O_4$ sintered at$1150^{\circ}C$ . In the specimen added$0.7mol%\;Co_3O_4$ , sintered density was$6.03g/cm^3$ and electrical peoperties were superior to any other components. The nonlinear coefficient a was 83, and clamping voltage ratio was 1.35. But, endurence surge current in the specimen added$0.5mol%\;Co_3O_4$ was$7000A/cm^2$ , and deviation of varistor voltage was${\Delta}-3.23%$ . As P.C.T and T.C.T environment test were succeed in all specimens, and deviation of varistor voltage in the specimen added$0.6mol%\;Co_3O_4$ was${\Delta}-0.81%$ . All specimens showed a good leakage current property in the High Temperature Continuous Load Test for 1000hr, at$85^{\circ}C$ , and variation rate of the varistor voltage was${\Delta}-2%$ . -
적층형 piezoelectric ceramic actuators를 제작하여 신뢰성을 평가하였다. 소자의 신뢰성 측정을 위하여 3kV/mm, 5kV/mm, 7kV/mm의 정류된 교류전압을 인가하였으며, 실험중 온도와 습도를 일정하게 유지하기 위하여 항온항습조안에서 실험을 실시하였다. 각 실험의 경우에 16개의 소자를 동시에 평가하였으며, 평균파괴시간을 Weibull 통계방식을 이용하여 계산하였으며, Arrhenius model, Power law model을 이용하여 사용 조건하에서 예상수명을 예측하였다.
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The dielectric and piezoelectric properties of silver doped
$Pb(Zr,Ti)O_3-Pb(Mn,W,Sb,Nb)O_3$ ceramics was examined. By varying the contents of silver(0.0, 0.4, 1.0 mol%), the effect of doped silver on PZT-PMWSN thin film was investigated at various sintering temperature(900, 1000,$1100^{\circ}C$ ). As increasing silver contents, the relative dielectric constant is increased and sinterbility is enhanced. At the specimen with 0.4 mol% Ag and sintered at$1100^{\circ}C$ , electromechanical coupling factor(kp), mechanical quality factor(Qm), dielectric constant(${\varepsilon}r$ ) and dielectric loss were 0.502, 811, 991, 0.006, respectively. The results show that the PZT-PMWSN/Ag composites have enhanced piezoelectic and dielectric properties and processing condition is improved. -
We have grown GaN layers with in-situ SiN mask by metal organic chemical vapor deposition(MOCVD) and study the physical properties of the GaN layer. We have also investigate the effect of the SiN mask on its optical property. By inserting a SiN mask, (102) the full width at half maximum(FWHM) decreased from 480 arcsec to 409 arcsec. The PL intensity of GaN with SiN mask improved 2 times to that without SiN mask. We have thus shown that the SiN mask improved significantly the physical and optical properties of the GgN layer.
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[
$BaTi_4O_9$ ] thin film were grown on$Pt/Ti/SiO_2/Si$ substrate using rf magnetron sputter, and the microstructure and dielectric properties of the thin films were investigated. For the film grown at$350^{\circ}C$ and rapidly thermal annealed at$900^{\circ}C$ , the$BaTi_5O_{11}$ Phase was formed. However, the$BaTi_4O_9$ phase was formed when the growing temperature exceeded$450^{\circ}C$ The dielectric constant of the$BaTi_4O_9$ thin film grown at$550^{\circ}C$ and rapidly thermal annealed at$900^{\circ}C$ was about 40 at low frequency range($100kHz{\sim}1MHz$ ) and 36 at microwave range($1{\sim}10GHz$ ) which is very close to that of the bulk$BaTi_4O_9$ phase. The dissipation factor was very low, about 0.005 at low frequency as well as microwave range. -
The characterization of interdigitated capacitors was investigated. The test structures are manufactured by low temperature co-fired ceramic(LTCC) process and their s-parameters were measured. The optimized equivalent circuit models for test structures were obtained using the partial element equivalent circuit(PEEC) method. Predictive modeling was performed on different test structures using optimized parameters to verify the circuit models. From this result, the manufacturability on the process can be improved through the predictive modeling for the characteristics of interdigitated capacitors.
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새로운 리튬 2차전지용 양극활물질인 Li[NiMnCo]O2를 간단히 합성할 수 있는 방법과 Si의 doping에 의해 그 특성을 향상하였다. 원하는 당량비의 Li, Ni, Co, Mn의 nitrate를 고순도의 에탄올에 용해하고 여기에 Si의 원료물질로서 poly(methyl phenyl siloxane)을 원하는 양(전체 전이금속 이온의
$2{\sim}10\;mol%$ )만큼 첨가한 후 약 30분 정도 교반하였다. 이 용액을 약$70{\sim}80^{\circ}C$ 정도의 온도에서 고점도의 진흙 상태가 될 정도로 가열하고$450{\sim}500^{\circ}C$ 의 온도에서 약 5시간 정도 열처리 하여 유기물이 없는 상태의 전구체를 제조하였다. 이 전구체를 분말형태로 분쇄하고$600{\sim}650^{\circ}C$ 정도의 온도에서 3시간,$900{\sim}950^{\circ}C$ 정도의 온도에서 5시간 연속적으로 열처리 하여 최종 활물질을 제조하였다. 이렇게 제조된 활물질은 175mAh/g 정도의 높은 비용량을 나타내었으며 4.5V 충전 조건에도 우수한 수명특성을 나타내었다. Si이 doping되지 않은 활물질에 비해 Si이 doping된 물질은 율특성, 수명특성에서 보다 우수한 특성을 나타내었는데 이것은 층상구조 활물질의 격자상수 증가와 impedance 증가 억제에 기인한 것으로 분석되었다. -
[
$MnO_2$ ]가 첨가된$0.9Pb(Zr_{0.5}Ti_{0.5})O_3-0.2Pb[(Zn_{0.8}Ni_{0.2})_{1/3}Nb_{2/3}]O_3$ (0.8PZT-0.2PZNN) 세라믹스는 그 압전특성과 유전특성이 뛰어나지만$1000^{\circ}C$ 이하의 낮은 소결 온도에서는 소결되지 않는다.$1000^{\circ}C$ 이하의 낮은 소결온도에서 소결하기 위해 CuO를 첨가한 결과, 소결온도$920^{\circ}C$ 에서 소결성은 우수하였으나 그 압전 특성의 저하가 두드러졌다. 이는 XRD에서 확인한 결과에 따르면 CuO의 첨가가 우수한 MPB 조성으로 판명된$MnO_2$ 가 첨가된 0.8PZT-0.2PZNN 세라믹스의 결정구조를 Rhombohedral 구조로 바꾸기 때문인 것으로 보였으며 이러한 문제는 PZNN의 비율을 조절하여 0.875PZT-0.125PZNN 세라믹스를 선택함으로 인해 해결할 수 있었다. 그러나 여전히 낮은$Q_m$ 값을 높이기 위해서$Al_2O_3$ 를 첨가하였고 그 결과 시편의 tetragonality 감소와$Q_m$ 값의 증가를 확인할 수 있었으나 그 첨가량이 0.2wt% 이상일 경우에는 밀도의 감소로 인한 압전특성의 저하가 나타났다. 밀도의 향상을 위해 Zn and Ni excess 조성을 선택하였고 그 결과 0.5wt%$MnO_2$ 와 0.2wt% CuO 그리고 0.3wt%$Al_2O_3$ 를 첨가한 0.875PZT-0.125PZNN 세라믹스(Zn and Ni excess 조성)를$920^{\circ}C$ 에서 소결한 경우$k_p=0.581,\;Q_m=809,\;d_{33}=345\;pC/N\;and\;{\varepsilon}_{33}/{\varepsilon}_0=1345$ 의 빼어난 압전 및 유전특성과$330^{\circ}C$ 의 높은$T_c$ 를 보였고 그 조성의 vibration velocity는 약4.5 m/s로 나타났다. -
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$Pb(Zr_{0.8}Ti_{0.2})TiO_3$ ] powder were prepared by the sol-gel method using a solution of Pb-acetate, Zr n-propoxide and Ti iso-propoxide. PZT thick film were fabricated by the screen printing method. and then the structural properties as a function of the sintering temperature were studied. PZT film thickness, obtained by four screen printing, was approximately$70{\sim}90{\mu}m$ . The PZT thick film, sintered at$1050^{\circ}C$ , showed deuse and uniform grain stractures and percent porosity of the thick film was 25.43%. -
Porous silicon(PS) as an excellent light diffuser can be used as an antireflection layer without other antireflection coating(ARC) materials. PS layers were obtained by electrochemical etching(ECE) anodization of silicon wafers in hydrofluoric acid/ethanol/de-ionized(DI) water solution(
$HF/EtOH/H_2O$ ). This technique is based on the selective removal of Si atoms from the sample surface forming a layer of PS with adjustable optical, electrical, and mechanical properties. A PS layer with optimal ARC characteristics was obtained in charge density (Q) of 5.2$C/cm^2$ . The weighted reflectance is reduced from 33 % to 4 % in the wavelength between 400 and 1000 nm. The weighted reflectance with optimized PS layers is much less than that obtained with a commercial SiNx ARC on a potassium hydroxide(KOH) pre-textured multi-crystalline silicon(mc-Si) surface. -
본 논문에서는 780 nm 고출력 레이저 다이오드의 신뢰성을 향상시키기 위하여 DLTS(deep level transient spectroscopy)을 이용하여 MOCVD(metalorganic chemical vapor deposition) 성장 조건 변화에 따른
$Al_{0.48}Ga_{0.52}As$ 와$Al_{0.1}Ga_{0.9}As$ 물질에서의 깊은준위(deep level)의 거동을 조사하였다. DLTS 측정결과, MOCVD로 성장된 막에서만 나타나는 결함(defect)으로 추정되는 trap A(0.3 eV), DX center로 알려진 trap B, 갈륨(Ga) vacancy와 산소(O2) 원자의 복합체(complex)에 의한 결함인 trap D(0.6 eV) 및 EL2 라고 불리우는 trap E(0.9 eV)의 네 가지 깊은준위들이 관측되었고, 성장 조건의 변화에 따라 깊은 준위들의 농도가 감소하는 것을 관측함으로써 최적 성장 조건을 찾을 수 있었다. -
With the need of high-speed and mass data transmission, optical communication system requires the growth of optical components. Waveguide photodiodes(WGPDs) are introduced and circuit models of WGPD and submodule are required for the optical receiver application. In this paper, the circuit models of WGPD and submodule are investigated and modeling results are derived by PEEC methodology. The s-parameters are measured for the test structures of WGPD and submodule and the equivalent circuit models are examined. The modeling results agreed well with the measured data and can present a reasonable physical representation.
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We have studied a lifetime in organic light-emitting diodes depending on buffer layer. A transparent electrode of indium-tin-oxide(ITO) was used as an anode. And the cathode for electron injection was LiAl. Phthalocyanine Copper(CuPc), Poly(3,4-ethylenedioxythiophene):poly (PEDOT:PSS), or poly (9-vinylcarbazole)(PVK) material was used as a buffer layer. A thermal evaporation was performed to make a thickness of 40nm of TPD layer at a rate of
$0.5{\sim}1\;{\AA}/s$ at a base pressure of$5{\times}10^{-6}\;torr$ . A material of tris(8-hydroxyquinolinate) Aluminum($Alq_3$ ) was used as an electron transport and emissive layer. A thermal evaporation of$Alq_3$ was done at a deposition rate of$0.7{\sim}0.8[{\AA}/s]$ at a base pressure of$5{\times}10^{-6}\;torr$ . By varying the buffer material, hole injection at the interface could be controlled because of the change in work function. Devices with CuPc and PEDOT:PSS buffer layer are superior to the other PVK buffer layer. -
Nanocrystalline silicon(nc-Si) thin films on the silicon substrates have been prepared by pulsed laser deposition(PLD). The optical and structural properties of films have been investigated depending on deposition temperature, annealing, and oxidation process. When the deposition temperature increased, photoluminescence(PL) intensity abruptly decreased and peaks showed red shift. Annealing process could reduce the number of defect centers. Oxidation had a considerable effect upon the formation and isolation of the nanocrystals. These results indicate that the formation mechanism of Si nanocrystals grown by PLD can be explained by three steps of growth, passivating defect centers, and isolation, sequentially.
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In this study, AZO(ZnO:Al) thin film were prepared by FTS(Facing Target Sputtering) system. The electrical, optical and crystallographic properties of AZO thin film with
$O_2$ gas flow ratio have been investigated. The thickness, transmittance, crystal structure and resistivity of AZO thin film were measured by a-step, UV-VIS spectrometer, XRD and four-point probe, respectively. As a result AZO thin film deposited with the transmittance over 80% and the resistivity about$10^{-1}\Omega-cm$ . -
The effect of the process parameters on the stable lifetime in rapid thermal firing(RTF) was investigated in order to optimize the process for the Cz-silicon. The process temperature was varied between
$700^{\circ}C\;and\;950^{\circ}C$ while the process time was chosen 1 s and 10 s. At below$850^{\circ}C$ the stable lifetime for 10 s is higher than that for 1 s and increases with increasing by the process temperature. However, at over$850^{\circ}C$ the improved stable lifetime is not dependent on the process time and temperature. On the other hand, two high temperature processes in solar cell fabrics are combined with the optimized process and the non-optimized process. The last process determines the stable lifetime. Also, the degraded stable lifetime could be increased by processing in optimized process. The decreased lifetime can increase using the optimized oxidation process, which is a final process in solar cells. Finally, the optimized and non-optimized processes are applied solar cells. -
Silicon thin films on p-type(100) silicon substrate have been prepared by a pulsed laser deposition(PLD) technique using a Nd:YAG laser. The pressure of the environmental gas during deposition was 1 Torr. After deposition, silicon thin film has been annealed in nitrogen ambient. Strong blue photoluminescence(PL) has been observed at room temperature. We report the optical properties of silicon thin films with the variation of the deposition parameters.
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발광층에 Alq3와 rubrene을 mixed host로 사용하고 DCJTB를 형광 dopant로 사용한 다층 박막 구조의 red OLEDs를 제작하였다. 소자의 구조는
$ITO:Anode(120nm)/{\alpha}-NPD:HTL(40nm)/Alq_3+Rubrene(mixed\;host\;1:1)+DCJTB(red\;dopant\;3%)+:EML(20nm)/Alq_3:ETL(40nm)/MgAg(Mg\;5%\;wt):Cathode(150nm)$ 로서 EML내부에 DCJTB를 Totally Doping Method와 Dotted-Line Doping Method의 두 가지 방법으로 도핑 하였다. Mixed host구조에 DCJTB를 6구간으로 나누어 Dotted Line Doping한 소자는 luminance yield가$9.2cd/A@10mA/cm^2$ 이었다. 이 소자는 DCJTB만을 Totally Doping한 소자의 luminance yield$3.2cd/A@10mA/cm^2$ 에 비해 약 190%정도의 높은 효율 향상을 보였다. 또한$10mA/cm^2$ 에 도달하는 전압은 5.5V Vs. 8.5V로서 mixed host를 사용한 소자에서 약 3V정도 구동전압이 낮아지는 효과가 있었다. 발광 스펙트럼의 Full Width Half Maximum(FWHM)은 각각 56.6nm와 61nm로서 rubrene을 mixed host로 사용한 소자에서 높은 색 순도를 얻을 수 있었다. 이러한 성능의 향상은$Alq_3$ 와 혼합된 rubrene에 의한 낮은 전하주 입장벽, 높은 전류밀도에서 나타나는 발광감쇄현상의 감소, 그리고 발광층의 DLD구조에 의한 전하의 trap & confinement 에 따른 발광 exciton의 형성확률이 증가한데서 나타났다고 생각된다. -
Organic semiconductors have attracted considerable attention due to their interesting physical properties followed by various technological applications in the area of electronics and opto-electronics. It has been a long time since organic solar cells were expected as a low-cost high-energy conversion device. Although practical use of them has not been achieved, technological progress continues. Morphology of the materials, organic/inorganic interface, metal cathodes, molecular packing and structural properties of the donor and acceptor layers are essential for photovoltaic response. We have fabricated solar-cell devices based on copper-phthalocyanine(CuPc) as a donor(D) and fullerene(
$C_{60}$ ) as an electron acceptor(A) with doped charge transport layers, and BCP as an exciton blocking layer(EBL). We have measured photovoltaic characteristics of the solar-cell devices using the xenon lamp as a light source. -
Control of electron concentration and photoluminescence intensity of ZnO thin films using oxygen gasThe electron concentration of ZnO thin film fabricated by pulsed laser deposition was controlled by varying oxygen gas pressure. The electron concentration of ZnO was increased from
$10^{17}\;to\;10^{19}/cm^3$ as oxygen gas pressure increased from 20 mTorr to 350 mTorr. Ultraviolet(UV) intensity of photoluminescence of ZnO was controlled, too. UV intensity of ZnO was increased as oxygen gas pressure increased from 20 mTorr to 350 mTorr. The relation between electron concentration and UV intensity was investigated. -
We have investigated equivalent-circuit analysis of organic light-emitting diodes in
$ITO/TPD/Alq_3/Al$ . Complex impedance Z of the device was measured in the frequency range of$40Hz{\sim}1MHz$ . We are able to interpret the frequency-dependent response in terms of equivalent-circuit model of contact resistance$R_s$ in series with two parallel combination of$R_{TPD},\;C_{TPD}\;and\;R_{Alq3},\;C_{Alq3}$ . -
적록청(Red, Green, Blue : RGB)의 세 기본 염료(primary dyes)를 사용하여 백색 유기전계발광소자(White Organic Light Emitting Devices : WOLEDs)을 유기물 분자선 증착(Organic Molecular Beam Deposition)방법에 의해서 제작하였다. 소자의 구조는
$ITO/{\alpha}-NPD(40nm)/DPVBi(6nm)/Alq_3(12nm)/Alq_3:DCJTB(7nm,3%)\;or\;DPVBi:DCJTB(7nm,3%)/Alq_3(35nm)/MgAg(150nm)$ 으로, red 발광층의 host 물질을$Alq_3$ 또는 DPVBi의 두 종류를 사용하여 소자를 제작하였다. 이들 소자들은 전류밀도가 증가함에 따라 스펙트럼 곡선의 변화가 거의 보이지 않았으며, 색좌표는 전류밀도$20mA/cm^2$ 에서 (0.34,0.34)이고$100mA/cm^2$ 에서(0.32,0.33)으로 비교적 안정적이였다.$Alq_3$ 을 red 발광층의 host로 사용한 소자는$10mA/cm^2({\sim}6V)$ 에서 luminance yield가 1.87cd/A 또는$100cd/m^2({\sim}5.5V)$ 에서는 발광효율 1.21m/w으로, DPVBi을 red 발광층의 host로 사용한 소자보다 약 20%의 효율향상을 보였다. 그러나 전류밀도$30mA/cm^2$ 이상에서는 발광효율이 반전되어 나타났다. 이런 현상은 DPVBi을 red 발광층의 host로 사용한 소자가$Alq_3$ 을 red 발광층의 host로 사용한 소자보다 발광 소광 현상이 적게 일어난 것에 기인하였다고 생각된다. 두 소자 모두$40mA/cm^2$ 에서 이상적인 화이트 발란스와 같은(0.33,0.33)의 색좌표를 보였다. -
본 연구에서는 최초로 TFT-LCD의 단위 화소 내에 존재하는 화소 및 각종 전극간 저항 성분을 총 소비전력으로부터 엄정하게 계산하였다. 단위 화소 내의 총 소비전력은 3차원적 액정의 분자배열 분포에 대하여, 전류 연속방정식을 만족하는 전위 분포로부터 얻어졌으며, 전위 분포의 시뮬레이션에 있어서는 유한한 크기의 복수 전극에 의한 측면 전장 효과가 고려되었다. 그 결과, 3차원적인 방법으로 계산된 정확한 화소 저항은 기존의 접근방법으로부터 얻어진 값에 비하여 무려 15% 가량 작은 것이 확인되었으며, 또한 데이터-공통 전극 및 화소-데이터 전극 간 저항 또한 무시할 수 없을 정도의 값이 나타남을 확인하였다.
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ZnO thin films were grown at different plume-substrate angles by pulsed laser deposition(PLD). From the X-ray diffraction(XRD) result, all ZnO thin films were found to be well c-axis oriented and c-axis lattice constant approached the value of bulk ZnO as plume-substrate(P-S) angle decreased. The grain size of ZnO thin films measured by atomic force microscopy increased and the UV intensity of ZnO thin films investigated by photoluminescence increased as P-S angle decreased. It is found that the improvement of structural and optical properties mainly comes from the reduction of the flux of ablated species arriving on a substrate per a laser shot by tilting a substrate parallel to the plume propagation direction.
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In this study the ITO thin films were prepared by using FTS(Facing Targets Sputtering) system. The electric characteristics, transmittance, surface roughness of ITO thin films were investigated as a function of varying input current and working gas pressure at room temperature. As a result, the ITO thin film was fabricated with resistivity
$6{\times}10^{-4}[\Omega{\cdot}cm]$ , carrier mobility$52.11[cm^2/V{\cdot}sec]$ , carrier concentration$1.72{\times}10^{20}[cm^{-3}]$ of ITO thin film at working pressure 1mTorr and input current 0.6A. -
In oil-filled equipment such as transformers, partial discharge or local overheating will make insulating material(oil, kraft paper, proclain and wood) be stressed and generate many sort of gases(
$CO,\;CO_2,\;H_2,\;C_2H_4$ ) which are dissolved in transformer oil. The ratio of this gas can make diagnostic tecchniques of the lifetime of transfomer so, it is important to monitoring$H_2$ gas continuously. This paper developes a system of detecting about$H_2$ gas by using$H_2$ gas sensor, and we describe operation and performance of this system -
The advantage of ring-shaped electrodeless fluorescent lamp is the removal of internal electrodes and heating filaments that are a light-limiting factor of conventional fluorescent lamps. Therefore, the life time of ring-shaped electrodeless fluorescent lamps is substantially higher than that of conventional fluorescent lamps and last up to 60,000 hours and is intended as a high efficacy replacement for the incandescent reflector lamp in many applications. In this paper, maxwell 3D finite element analysis program(Ansoft) was used to obtain electromagnetic properties associated with the coil and nearby structures. The electromagnetic emitting properties were presented by 3D simulation software operated at 250[kHz] and some specific conditions
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This paper is investigated about the effect of carrier gas and humidity for generating hydrogen gas. In the experimental result of generating hydrogen gas by non-thermal plasma reactor, the rate of generating hydrogen gas is different with what kind of carrier gas is. We used two types of carrier gas, such as
$N_2$ and He.$N_2$ as carrier gas is more efficient to generate hydrogen gas than He because$N_2$ is reacted with$O_2$ , which is made from water dissociation. In comparison with no humidity and humidity 45[%], the generation of hydrogen gas is decreased with increasing the humidity. That is the result that the energy for water dissociation is reduced on water surface because a part of plasma energy is absorbed at the small particle produced from humidifier. -
Inductively coupled plasma is commonly used for electrodeless lamp due to its ease of plasma generation. Optical characteristics significantly depend on the RF power and gas pressure of the plasma. This paper describes the measurement of luminance as a function of RF power and gas pressure with a goal of finding optimal operating conditions of the electrodeless lamp. The gas pressure was varied from 10[mTorr] to 300[mTorr] or 500[mTorr] and the RF power was varied from 10[W] to 200[W]. It was found that the luminance tends to be decreased when argon and neon pressure is increased, and the luminance is increased as RF power is increased. It was also found that the luminance per unit RF power is high when the argon and neon pressure is low and when the RF power is in the range of
$30[W]{\sim}40[W]$ or 10[W]. -
CMP process requirements become tighter especially in sub-100nm technology. Especially, high planarity and low defectivity appear as leading issues in CMP technology. Also, the introduction of new materials and advanced lithography technique increases CMP applications. Here are listed some major issues and challenges in CMP technology, which can be categorized following four items. These have practical significance and should be considered more concretely for future generation.
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As the organic acids were added in the slurry, zeta potential of alumina was changed to negative value and IEP value was shifted from alkaline to acidic pH. In citric acid based slurry, Cu surface continuously dissolved and etching depth linearly increased. On the contrary, passivation layer was grown on Cu surface in oxalic acid based slurry. As the platen rotation speed increased, Preston coefficient decreased in both slurries. With oxalic acid based slurry, at low velocity, removal rate is high value because of high friction force compared to citric acid based slurry. As platen velocity increased, removal of Cu in citric acid based slurry became higher value than oxalic acid based slurry. Typical lubrication behaviors were observed in both slurries. As Sommerfeld number increased, COF values gradually decreased and then re-increased. It indicated that lubrication was changed to direct contact or semi-direct contact mode to hydro-lubrication mode.
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Chemical mechanical polishing(CMP) process was studied in terms of tribology in this paper. CMP performed by the down force and the relative motion of pad and wafer with the slurry is typically tribological system composed of friction, wear and lubrication. The piezoelectric quartz sensor for friction force measurement was installed and the friction force was detected during CMP process. Various coefficient of friction was attained and analyzed with the kind of pad, abrasive and the abrasive concentration. The lubrication regime is also classified with
${\eta}v/p(\eta,\;v\;and\;p;$ the viscosity, relative velocity and pressure). Especially, the co-relation not only between the friction force and the removal per unit distance but also between the coefficient of friction and within-wafer-nonuniformity was estimated. -
본 연구는 반도체소자 제조공정에 적용되는 CMP공정 중 LPP(Landing Plug Poly) Contact간의 소자 분리를 위해 진행되는 LPP CMP의 후 세정 과정에서 유발되는 방사형 Defect 제거에 관한 내용이다. 방사형 Defect은 LPP CMP 후에 노출되는 BPSG, Poly, Nitride Film과 연마재로 사용되는SiO2 입자, 후 세정과정에서 적용되는 SC-1, DHF,
$NH_4OH$ Chemical과 Brush와의 상호작용에 의해 발생되며, Cleaning시의 산성 분위기 하에서 각 물질간의 pH와 Zeta Potential의 차이에서 기인한다. 이 Defect을 제거하기 위해 LPP CMP후에 Film 표면에 노출되는 각 물질의 표면 특성과 CMP 후 오염입자의 흡착과 재 흡착에 영향을 미치는 Electrostatic force와 Van der Waals force, PVA Brush에 의한 Mechanical force의 상호작용을 고려하여 최적 후 세정 조건을 제시 하였다. -
We investigated the nanotopography impact on the post-chemical mechanical polishing (post-CMP) oxide thickness deviation(OTD) of ceria slurry with a surfactant. Not only the surfactant but also the slurry abrasive size influenced the nanotopography impact. The magnitude of the post-CMP OTD increased with adding the surfactant in the case of smaller abrasives, but it did not increase in the case of larger abrasives, while the magnitudes of the nanotopography heights are all similar. We created a one-dimensional numercal simulation of the nanotopography impact by taking account of the non-Prestonian behavior of the slurry, and good agreement with experiment results was obtained.
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Park, Joon-Sang;Park, Jung-Hun;Lee, Jae-Dong;Hong, Chang-Ki;Cho, Han-Ku;Moon, Joo-Tae;Ryu, Byoung-Il 243
W CMP 공정에서 abrasive 의 size 및 shape 에 따른 CMP 거동에 대해 관찰하였으며, 주요 제거 막질인 W 막질과 stopping layer 로 사용되는 Oxide 막질에 대한 압력(P)과 상대 속도(V) 영향성을 관찰하였다. CMP 제거량이 입자의 size 변화에 의존한다는 기존의 이론과는 달리 응집도(aggregate ratio) 변화가 주요 변수임을 밝혀 내었다. 한편, 각 막질에 대한 P,V 영향성 평가를 통해, 변형된 Prestonian equation 이 abrasive size 및 shape 에 상관없이 W 막질의 제거 거동을 설명하는데 중요한 역할을 수행함을 보였다. 그렇지만, W CMP 공정에서 stopping layer 로 사용되는 oxide 막질의 거동을 설명하는 데에는 어려움이 있었으며, 특히 P,V 에 의한 비선형적 removal rate(RR) 거동발생으로 인해 기존의 이론치와는 많은 차이를 나타내었다. 또한, abrasive size 와 shape 에 따라서도 복잡한 거동을 나타낸다. -
Choi, Jae-Young;Kim, Hyoung-Jae;Jeong, Young-Seok;Park, Jae-Hong;Kinoshita, Masaharu;Jeong, Hae-Do 247
Chemical-Mechanical Polishing(CMP) especially is becoming one of the most important ULSI processes for the 0.25m generation and beyond. And there are many elements affecting CMP performance such as slurry, pad, process parameters and pad conditioning. Among these elements the CMP pad is considered one of the most important because of its change. But the surface of the pad has irregular pores, so there is non-uniformity of slurry flow and of contact area between wafer and the pad, and glazing occurs on the surface of the pad. So we make CMP pad with micro structure using micro molding method. This paper introduces the basic concept and fabrication technique of CMP pad with micro-structure and the characteristic of polishing. Experimental results demonstrate the removal rate, uniformity, and time vs. removal rate. -
반도체는 high integrated, high speed, low power를 위하여 design 뿐만 아니라 재료 측면에서도 많은 변화를 가져오고 있으며, RC delay time을 줄이기 위하여 Al 배선보다 비저항이 낮은 Cu와 low-k material 적용이 그 대표적인 예이다. 그러나, Cu 배선의 경우 dry etching이 어려우므로, 기존의 공정으로는 그 한계를 가지므로 damascene 또는 dual damascene 공정이 소개, 적용되고 있다. Damascene 공정은 절연막에 photo와 RIE 공정을 이용하여 trench를 형성시킨 후 electrochemical plating 공정을 이용하여 trench에 Cu를 filling 시킨다. 이후 CMP 공정을 이용하여 절연막 위의 Cu와 barrier material을 제거함으로서 Cu 배선을 형성하게 된다. Dual damascene 공정은 trench와 via를 동시에 형성시키는 기술로 현재 대부분의 Cu 배선 공정에 적용되고 있다. Cu CMP는 기존의 metal CMP와 마찬가지로 oxidizer를 이용한 Cu film의 화학반응과 연마 입자의 기계가공이 기본 메커니즘이다. Cu CMP에서 backside pressure 영향이 uniformity에 미치는 영향을 살펴보았으며, electrochemical plating 공정에서 발생하는 hump가 CMP 결과에 미치는 영향과 dishing 결과를 통하여 그 영향을 평가하였다.
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Chemical mechanical polishing(CMP) has been adopted in processing semiconductors for more than ten years. Although some customers expressed negative opinion about CMP at the beginning of its appearance, CMP has currently been applied to a variety of fields in addition to semiconductor multi-layer wiring strategies. This report summarizes each sort of CMP skills in their development stage and introduces each type of MAT's machines optimized for CMP research and development
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The stochiometric mix of evaporating materials for the
$ZnGa_2Se_4$ single crystal thin films were prepared from horizental furnace. The polycrystal structure obtaind from the power x-ray diffraction was defect chalcopyrite. The lattice costants$a_0\;and\;c_0\;were\;a_0=5.51\;A,\;c_0=10.98\;A$ . To obtains the single crystal thin films,$ZnGa_2Se_4$ mixed crystal were deposited on throughly etched Si(100) by the Hot Wall Epitaxy (HWE) system. The temperates of the source and the substrate were$590^{\circ}C\;and\;450^{\circ}C$ , respectively. The crystalline structure of single crystal thin films was investigated by the double crystal X-ray diffraction(DCXD). Hall effect on this sample was measured by the method of van der Pauw and studied on carrier density and mobility dependence on temperature. In order to explore the applicability as a photoconductive cell, we measured the sensitivity($\gamma$ ), the ratio of photocurrent to dark current(pc/dc), maximum allowable rower dissipation(MAPD), spectral response and response time. -
A silver indium sulfide(
$AgInS_2$ ) epilayer was grown by the hot wall epitaxy method, which has not been reported in the literature. The grown$AgInS_2$ epilayer has found to be a chalcopyrite structure and evaluated to be high qualify crystal. From the photocurrent measurement in the temperature range from 30 K to 300 K, the two peaks of A and B were only observed, whereas the three peaks of A, B, and C were seen in the PC spectrum of 10 K. These peaks. are ascribed to the band-to-band transition. The valence band splitting of$AgInS_2$ was investigated by means of the photocurrent measurement. The crystal field splitting,$\ddot{A}cr$ , and the spin orbit splitting,$\ddot{A}so$ , have been obtained to be 0.150 eV and 0.009 eV at 10 K, respectively. And, the energy band gap at room temperature has been determined to be 1.868 eV. Also, the temperature dependence of the energy band gap,$E_g(T)$ , was determined. -
A fast switching thyristor with a superior trade-off property between the on-state voltage drop and the turn-off time could be fabricated by the proton irradiation method. After fabricating symmetric thyristor dies with a voltage rating of 1,600V from
$350{\mu}m$ thickness of$60{\Omega}cm$ NTD-Si wafer and$200{\mu}m$ width of N-base drift layer, the local carrier lifetime control by the proton irradiation was performed with help of the HI-13 tandem accelerator in China. The thyristor samples irradiated with 4.7MeV proton beam showed a superior trade-off relationship of$V_{TM}=1.55V\;and\;t_q=15{\mu}s$ attributed to a very narrow layer of short carrier lifetime(${\sim}1{\mu}s$ ) in the middle of its N-base drift region. To explain the small increase of$V_{TM}$ , we will introduce the effect of carrier compensation by the diffusion current at the low carrier lifetime region. -
Kim, Young-Dong;Na, Young-Il;Lee, Jae-Heong;Jung, Hak-Kee;Jung, Dong-Su;Lim, Dong-Gun;Yang, Kea-Joon;Yi, Jun-Sin 276
CdS thin films on polymer substrates such as polycarbonate(PC) and polyethylene terephthalat(PET) have many merits such as light weight, small volume and can make the obtained devices folded, easily carried. In present work, CdS thin films on glass, PC, and PET substrates have been prepared by chemical bath deposition. The structural and optical propertied of the films depending on substrate types have been investigated. -
This paper discribes the design concept, fabrication process and measuring result of 2.5kV Gate Commutated Thyristor devices. Integrated gate commutated thyristors(IGCTs) is the new power semiconductor device used for high power inverter, converter, static var compensator(SVC) etc. Most of the ordinary GTOs(gate turn-off thyristors) are designed as non-punch-through(NPT) concept; i.e. the electric field is reduced to zero within the N-base region. In this paper, we propose transparent anode structure for fast turn-off characteristics. And also, to reach high breakdown voltage, we used 2-stage bevel structure. Bevel angle is very important for high power devices, such as thyristor structure devices. For cathode topology, we designed 430 cathode fingers. Each finger has designed
$200{\mu}m$ width and$2600{\mu}m$ length. The breakdown voltage between cathode and anode contact of this fabricated GCT device is 2,715V. -
Micro-structures fabricated by X-ray lithography are largely affected by doses, development conditions and other factors. For these reasons, PMMA development rates and its surface profiles under various development conditions were obseued. Development rates were measured in the rage from 1 to 6
$kJ/cm^3$ using the 9C1 white beamline of Pohang light source(PLS). In this experiment, we observed that development rates of stacked PMMA sheet using Si filter were relatively higher than that of not using Si filter. Furthermore, development rates in condition with the acoustic agitation(1 MHz, 3.67$W/cm^3$ ) were twice than that in dipping condition with$35^{\circ}C$ developer considering the PMMA sheets-substrate bond strength -
Due to the charge compensation effect, SOI(Silicon-On-Insulator) LIGBT with dual-epi layer have been found to exhibit both low forward voltage drop and high static breakdown voltage. In this paper, electrical characteristics of the SOI LIGBT with dual-epi structure is presented. Trenched anode structure is employed to obtain uniform current flowlines and shorted anode structure also employed to prevent the fast latch-up. Latching current density of the proposed LIGBT with
$T_1=T_2=2.5{\mu}m,\;N_1=7{\times}10^{15}/cm^3,\;N_2=3{\times}10^{15}/cm^3$ is$800A/cm^2$ and breakdown voltage is 125V while latching current density and breakdown voltage of the conventional LIGBT is$700A/cm^2$ and 55V. -
The SIT was introduced by Nishizawa. in 1972. When compared with high-voltage, power bipolar junction transistors, SITs have several advantages as power switching devices. They have a higher input impedance than do bipolar transistors and a negative temperature coefficient for the drain current that prevents thermal runaway, thus allowing the coupling of many devices in parallel to increase the current handling capability. Furthermore, the SIT is majority carrier device with a higher inherent switching speed because of the absence of minority carrier recombination, which limits the speed of bipolar transistors. This also eliminates the stringent lifetime control requirements that are essential during the fabrication of high-speed bipolar transistors. This results in a much larger safe operating area(SOA) in comparison to bipolar transistors. In this paper, vertical SIT structures are proposed to improve their electrical characteristics including the blocking voltage. Besides, the two dimensional numerical simulations were carried out using ISE-TCAD to verify the validity of the device and examine the electrical characteristics. A trench gate region oxide power SIT device is proposed to improve forward blocking characteristics. The proposed devices have superior electrical characteristics when compared to conventional device. Consequently, the fabrication of trench oxide power SIT with superior stability and electrical characteristics is simplified.
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This paper introduces a supplementary module reducing tile standby-power of Power Line Communication(PLC) modem, one of the network equipments that take up much of tile stand-by power. This supplementary module consists of three parts, such as a compare part, a control part, and a switch part. This supplementary module controls the power going from the power supply element into PLC modem, which brings about the effect of standby-power reduction. It is assured that over 30% standby-power reduction is estimated when we applied this module to a low-speedy PLC control modem.
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To fill the gap of films for metal-to-metal space High density plasma fluorinated silicate glass (HDP FSG) is used due to various advantages. However, FSG films can have critical drawbacks such as bonding issue of top metal at package, metal contamination, metal peel-off, and so on. These problems are generally caused by fluorine penetration out of FSG film. Hence, FSG capping layers such like SRO(Silicon Rich Oxide) are required to prevent flourine penetration. In this study, their characteristics and a capability to block fluorine penetration for various FSG capping layers are investigated through FTIR analysis. FTIR graphs of both SRO using ARC chamber and SiN show that clear Si-H bonds at
$2175{\sim}2300cm^{-1}$ . Thus, Si-H bond at$2175{\sim}2300cm^{-1}$ of FSG capping layers lays a key role to block fluorine penetration as well as dangling bond. -
The
$Cd_{1-x}Zn_xS$ thin films were grown on the Si(100) wafers by a hot wall epitaxy method(HWE). The source and substrate temperature are$600^{\circ}C\;and\;440^{\circ}C$ respectively. The crystalline structure of epilayers was investigated by double crystal X-ray diffraction(DCXD). Hall effect on the sample was measured by the van der Pauw method and studied on the carrier density and mobility dependence on temperature. In order to explore the applicability as a photoconductive cell, we measured the sensitivity($\gamma$ ), the ratio of photocurrent to darkcurrent(pc/dc), maximum allowable power dissipation(MAPD), spectral response and response time. The results indicated that the photoconductive characteristic were the best for the$Cd_{0.53}Zn_{0.47}S$ samples annealed in Cu vapor compare with in Cd, Se, air and vacuum vapour. Then we obtained the sensitivity of 0.99, the value of pc/dc of$1.65{\times}10^7$ , the MAPD of 338mW, and the rise and decay time of 9.7ms and 9.3ms, respectively -
The electronic structure of ZnO oxide semiconductor having high optical transparency and good electric conductivity was theoretically investigated by
$DV-X_{\alpha}$ (the discrete variation$X_{\alpha}$ ) method, which is a sort of the first principle molecular orbital method using Hatre-Fock-Slater approximation. The electrical and optical properties of ZnO are seriously affected by the addition of impurities. The imnurities are added to ZnO in order to increase the electric conductivity of an electrode without losing optical transparency. In this study, the effect of impurities of III and IV family on the band structure, impurity levels and the density of state of ZnO were investigated. The cluster model used for calculations was$[MZn_{50}O_{53}]^{-2}$ (M=elements belonging to III and IV family). -
Lee, Woo-Sun;Ko, Pi-Ju;Choi, Kwon-Woo;Kim, Tae-Wan;Choi, Chang-Joo;Oh, Geum-Koh;Seo, Yong-Jin 313
Chemical mechanical polishing(CMP) process has been widely used to planarize dielectric layers, which can be applied to the integrated circuits for sub-micron technology. Despite the increased use of CMP process, it is difficult to accomplish the global planarization of in the defect-free inter-level dielectrics(ILD). we investigated the performance of$WO_3$ CMP used silica slurry, ceria slurry, tungsten slurry In this paper, the effects of addition oxidizer on the$WO_3$ CMP characteristics were investigated to obtain the higher removal rate and lower non-uniformity. -
The fabrication of Solar Cell and Doping Property using SOD Method On the Multi-crystalline Si wafer이 논문에서는 태양전지 공정 중에서 중요시되는 에미터 형성에 대한 방법 중 하나인 SOD기술을 도입하였다. SOD(Spin-On Doping)은 저가형 고효율 태양전지를 개발하기 위하여 연구되고 있는 방법 중의 하나이다. 태양전지 제작을 위해 사용한 기판은 P형 다결정 Si 페이퍼를 사용하였고, SOD 기술을 적용하여 온도와 시간에 따른 도핑특성의 변화를 실험적으로 연구하였다.
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스며들기 현상을 알아볼 수 있는 간단하면서도 실질적인 방법을 고안하여,
$V_2O_5$ 나노선의 스며들기 모형을 설명하였다. 상온에서의 ammonium metavanadate 용액에서$V_2O_5$ 나노선은 성장초기단계에는$0.13{\mu}m/day$ 의 성장속도로 길이가 길어졌으며, 3개월 평균은 약$0.03{\mu}m/day$ 의 성장속도로 길이가 증가하였다. 스며들기 모델은$V_2O_5$ 용액을 액체질소를 이용하여 급속히 냉각시킴으로써 얻을 수가 있었다. 약 합성후 7시간이 지난 후부터 전도도의 급속한 증가가 관찰되었으며, 나노선의 평균길이가 40nm정도에서 스며들기 효과의 임계치에 도달함을 확인하였다. -
The bubble flow from the wafer surface during plating process was studied in this paper. The plating shape in the opening of photoresist becomes gradated shape in the fountain plating system, because bubbles from the wafer surface are difficult to escape from the deep openings, vias. So, we designed the tilted electrode ring contact to get uniform bump height on all over the wafer and evaluated the film uniformity by SEM and
${\alpha}-step$ . In${\alpha}-step$ measurement, film uniformities in the fountain plating system and the tilted electrode ring contact system were${\pm}16.6%,\;{\pm}4%$ respectively. -
Hot filament 플라즈마 화학기상 증착법(HFPECVD)를 사용하여 질산화철의 농도에 따른 탄소나노튜브의 성장 특성을 관찰하기 위해 실험을 진행하였다. 암모니아(
$NH_3$ )를 희석가스로 사용하였고, 아세틸렌($C_2H_2$ )를 탄소 원료가스로 각각 사용하였다. 암모니아 가스 플라즈마를 사용하여 전처리 된 질산화철 촉매층의 SEM(Scanning Electron Microscopy) 이미지를 관찰하여 본 결과, 나노 사이즈의 촉매 그레인(grain)을 발견할 수 있었다. 그리고 탄소 나노튜브의 직경과 성장 밀도 또한 전처리 된 촉매 층에 따라 다른 양상을 보였다. TEM(Transmission Electron Microscopy)를 사용하여 탄소나노튜브를 관찰한 결과 bamboo 구조를 한 다중벽 탄소 나노튜브(MWCNT)를 관찰할 수 있었다. -
Boron Phosphide films were deposited on(III) Si substrate at
$650^{\circ}C$ , by the reaction of$B_2H_6$ with$PH_3$ using CVD.$N_2$ was employed as carrier gas. The optimal gas rates were 20 ml/min for$B_2H_6$ , 60 ml/min for$PH_3$ ml/min and$1{\ell}/min$ for$N_2$ . The films were annealed for 1hour in$N_2$ ambient at$550^{\circ}C$ and measured. The measurement of AFM shows that the average surface roughness is each$10.108{\AA}$ and$29.626{\AA}$ . So, we could know every commonplace thing. The measurement of XRD shows that the films have the preferred orientation of(1 0 1). From SEM images, we could see that Boron Phosphide is showed of a structure, which is grain size, which is grain boundary size. Also, the measurement of AES is shown the films have$B_{13}P_2$ Stoichiometry. From WDX See that ingredient is detected each Boron and Phosporus. So, we could see that deposited BP thin film. In this study, we obtained the BP thin film by deposited in atmosphere pressure, and known to applicate as microwave absorbtion material of BP thin film. -
근래에
$TiO_2$ 를 이용한 염료감응형 태양전지에 대한 연구가 많이 진행되어 이미 실용화 단계에 이르고 있다. 그러나, 이러한$TiO_2$ 를 이용한 태양전지 효율이 한계에 이르러 이를 향상시키기 위한 노력이 다방면에서 이루어지고 있다. 이에 본 연구에서는 넓은 밴드갭 직접형 반도체재료로서, 전기적, 열적, 광학적, 촉매 특성이 우수하고, 압전성이 크고 광투과성 및 형광성이 매우 우수하여, 현재 여러 전자사업 분야에서 사용될 뿐아니라, 태양전지분야에서도 최근 관심이 증대되고 있는, ZnO를 이용하여$TiO_2$ 대체 전극재로서의 가능성을 고찰하였다. ZnO 슬러리는 유계 방법을 이용하여 제조하였고, 막은 닥터 블레이드(doctor blade)법에 의해 TCO 위에 형성되었다. 원료 분말 및 막의 형상은 FE-SEM에 의해 확인되었다. 형성된 막은 다양한 조건에서 소결하여, 최종적으로 샌드위치형 염료감응형 셀을 제조한 후 효율을 측정 비교하여 태양전지의 활성 전극 재료로서 적정한 ZnO 조건을 예측할 수 있었다. -
The phase transition between amorphous and crystalline states in chalcogenide semiconductor films can controlled by electric pulses or pulsed laser hem: hence some chalcogenide semiconductor films can be applied to electrically write/erase nonvolatile memory devices, where the low conductive amorphous state and the high conductive crystalline state are assigned to binary states. This letters researched into the characteristic of phase change transition in differential Chalcogenide thin films materials. The electrode used Al and experimented on 100nm, 300nm, 500nm respectively.
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The CdSe thin films wee grown on the Si(100) wafers by a hot wall epitaxy method(HWE). The source and substrate temperature are
$600^{\circ}C\;and\;430^{\circ}C$ respectively. The crystalline structure of epilayers was investigated by double crystal X-ray diffraction(DCXD). Hall effect on the sample was measured by van der Pauw method and studied on the carrier density and mobility dependence on temperature. From Hall data, the mobility was increased in the timperature range 30K to 150K by impurity scatering and decreased in the temperature range 150K to 293K by the lattice scattering. In order to explore the applicability as a photoconductive cell, we measured the sensitivity($\gamma$ ), the ratio of photocurrent to darkcurrent(pc/dc), maximum allowable power dissipation(MAPD), spectral response and response time. The results indicated that the photoconductive characteristic were the best for the samples annealed in Cu vapor compare with in Cd, Se, air and vacuum vapour. Then we obtained the sensitivity of 0.99, the value of pc/dc of$1.39{\times}10^7$ , the MAPD of 335mV, and the rise and decay time of 10ms and 9.5ms, respectively -
The
$CdS_{1-x}Se_x$ thin films were grown on the GaAs(100) wafers by a Hot Wall Epitaxy method(HWE). The temperatures the source and the substrate temperature are$580^{\circ}C\;and\;440^{\circ}C$ respectively. The crystalline structure of thin films was investigated by double crystal X-tay diffraction(DCXD). Hall effect on the sample was measured by the van der Pauw method and studied on the carrier density and mobility dependence on temperature. In order to explore the applicability as a photoconductive cell, we measured the sensitivity($\gamma$ ), the ratio of photocurrent to darkcurrent(pc/dc), maximum allowable power dissipation(MAPD), spectral response and response time. -
This paper discribes the analysis of the I-V characteristics of 4H-SiC DiMOSFET with single epi-layer Silicon Carbide has been around for over a century. However, only in the past two to three decades has its semiconducting properties been sufficently studied and applied, especially for high-power and high frequency devices. We present a numerical simulation-based optimization of DiMOSFET using the general-purpose device simulator MINIMIS-NT. For simulation, a loin thick drift layer with doping concentration of
$5{\times}10^{15}/cm^3$ was chosen for 1000V blocking voltage design. The simulation results were used to calculate Baliga's figure of Merit (BFOM) as the criterion structure optimization and comparison. -
Na, Young-Il;Kim, Young-Dong;Lee, Jae-Heong;Jung, Hak-Kee;Lee, Jong-In;Lim, Dong-Gun;Yang, Kea-Joon 357
Al doped ZnO thin films have been were properties of excellent optical transmittance, low resistivity and wide bandgap where be widely used transparent electrode on solar cell. In this paper, ZnO:Al thin films on PC substrate were prepared by RF magnetron sputtering method using ceramic taget with diffrent deposition conditions. In addition, the electrical, structural, optical properties were investigated. we investigated sample properties of Sputter powers and pressures change in$25{\sim}125W,\;2{\times}10^{-2}{\sim}2{\times}10^{-3}Torr$ . -
Surface doped SOI RESURF LDMOSFET with recessed source region is proposed to improve the on- and off-state characteristics. Surface region of the proposed LDMOS structure is doped like step. The characteristics of the proposed LDMOS is verified by two-dimensional process simulator ATHENA and device simulator ATLAS[1]. The numerically calculated on-resistance(
$R_{ON}$ ) of the proposed LDMOS is$10.36\Omega-cm$ and breakdown voltage is 205V when$L_{dr}=7{\mu}m$ with step doped surface. -
Charge compensation effects in multi-resurf structure make possible to obtain high breakdown volatage and low on-resistance in vertical MOSFET. In this paper, electrical characteristics of the vertical MOSFET with multi epitaxial layer is presented. Proposed device has n and p-pillar for obtaining the charge compensation effects and The doping concentration each pillar is varied from
$5{\times}10^{14}\;to\;1{\times}10^{16}/cm^3$ . The thickness of the proposed device also varied from$400{\mu}m\;to\;500{\mu}m$ . Due to the charge compensation effects, 4500V of breakdown voltage can be obtained. -
The characteristics of antimony implants are relatively well-known. Antimony has lower diffusion coefficient, shorter implantation range, and smaller scattering as compared with conventional dopants such as phosphorous and arsenic. It has been commonly used in the doping of buried layer in Bi-CMOS process. In this paper, characteristics and appropriate condition of monitoring in antimony implant beam tuning using
$Sb_2O_3$ were investigated to get a reliable process. TW(Thema Wave) and Rs(Sheet Resistance) test were carried out to set up condition of monitoring for stable operation through the periodic inspection of instruction condition. The monitoring was progressed at the point that the slant of Rs varied significantly to investigate the variation of instruction accurately. -
A Test Circuit for Characterization and Modelling of the Reverse Recovery Power High-Speed Rectifier전력전자 회로의 고속화에 따라 정류기의 역할은 점차 중요해지고 있다. 전원장치의 compact화 및 초소형화에 따라 스위칭 주파수는 높아지고 있다. 최근 전원장치의 on-line 뿐만 아니라 off-line에서의 효율을 향상시키려면 도통손실 및 스위칭 손실을 최소화를 요구받고 있다. 스위칭 주파수가 증가함에 따라 power rectifier는 도전 및 스위칭 손실의 최소화를 위해서는 스위칭 손실의 주된 원인인 역회복 특성을 잘 파악해야 한다. 이를 위해 본 고에서는 최근 제작된 SiC SBD의 역회복 특성을 분석을 위한
$t_{rr}$ , 측정을 위한$t_{rr}$ Tester를 MIL-STD-750-4031.4에 참고하여 제작하였으며, 제작된$t_{rr}$ Tester를 이용하여 SiC SBD의$t_{rr}$ 의 측정결과에 대해 기술하였다. -
The phase transition between amorphous and crystalline states in chalcogenide semiconductor films can controlled by electric pulses or pulsed laser beam; hence some chalcogenide semiconductor films can be applied to electrically write/erase nonvolatile memory devices, where the low conductive amorphous state and the high conductive crystalline state are assigned to binary states. GeSbTe(GST), AsSbTe(AST), SeSbTe(SST) used to phase change materials by appling electrical pulses. Thickness of ternary chalcogenide thin films have about 100nm. Upper and lower electrode were made of Al. It is compared with I-V characteristics after impress the variable pulses.
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The stochiometric nix of evaporating materials for the
$AgInS_2$ single crystal thin films were prepared from horizontal furnace. The polycrystal structure obtaind from the power x-ray diffraction was chalcopyrite. The lattice costants$a_0\;and\;c_0$ were$a_0=5.86(5.82)\;A,\;c_0=11.355(11.17)\;A$ . To obtains the single crystal thin films,$AgInS_2$ mixed crystal were deposited on throughly etched GaAs(100) by the Hot Wall Epitaxy(HWE) system. The temperates of the source and the substrate were$590^{\circ}C\;and\;450^{\circ}C$ , respectively. The crystalline structure of single crystal thin films was investigated by the double crystal X-ray diffraction(DCXD). Hall effect on this sample was measured by the method of van der Pauw and studied on carrier density and mobility dependence on temperature. In order to explore the applicability as a photoconductive cell, we measured the sensitivity($\gamma$ ), the ratio of photocurrent to dark current (pc/dc), maximum allowable power dissipation(MAPD), spectral response and response time. -
염료감응형 태양전지는 다공질
$TiO_2$ 전극막, 광감응형 염료, 전해질, 상대전극으로 구성된, 전기화학적 원리를 응용한 신형태양전지이다. 본 연구에서는 백금 상대전극의 제조 방법에 따른 태양전지의 효율 및 특성을 비교하였다. 본 연구에 사용된 백금 상대전극막의 제조 방법은 스퍼터링(sputtering)법 과 전기도금(electroplating)법이다. 두 상대전극의 전기화학적 특성은 cyclic voltammetry와 Imepedance spectroscopy 측정을 통하여 비교하였다. 두 전극이 태양전지의 효율 및 특성에 미치는 영향은 단위 셀 태양전지를 제조하여 단파장 하에서$350nm{\sim}700nm$ 의 파장별 효율을 측정함으로써 조사하였다. -
As the integrated circuit device shrinks to the smaller dimension, the chemical mechanical polishing (CMP) process was required for the global planarization of inter-metal dielectric(IMD) layer with free-defect. The effect of alternative commerical slurries pads, and post-CMP cleaning alternatives are discuess, with removal rate, scratch dentisty, surface roughness, dishing, erosion and particulate density used as performance metrics. we investigated the performance of
$SnO_2$ -CMP process using commonly used silica slurry, ceria slurry, tungsten slurry. This study shows removal rate and non-uniformity of$SnO_2$ thin film used to gas sensor by using Ceria, Silica, W-Slurry after CMP process. This study also shows the relation between particle size and CMP with particle size analysis of used slurry. -
본 논문에서는 완충층용 MgO 박막을 P-type(100)Si 기판위에 작업가스
$Ar:O_2=80:20$ , RF 파워 50W, 기판온도$400^{\circ}C$ , 10mtorr의 작업진공에서$500{\AA}$ 증착하였다. 제작된 MgO/Si 기판위에 RF Magnetron sputtering법으로 작업가스$Ar:O_2$ 의 비율을 90:10, 80:20, 70:30으로 변화하면서$BST(Ba_{0.5}Sr_{0.5}TiO_3)$ 박막을 약$2000{\AA}$ 증착하였다. XRD 측정결과 작업가스비의 변화에 관계없이(110)BST와 (111)BST 피크만이 관찰되었으며 작업가스$Ar:O_2=80:20$ 에서 가장 양호한 결정성을 나타내었다. I-V 측정결과 인가전계${\pm}100kV/cm$ 에서$10^{-7}A/cm^2$ 이하의 양호한 누설전류 특성을 보여주고 있으며 C-V 측정결과 작업가스$Ar:O_2$ 의 비율 90:10, 80:20, 70:30에서의 비유전율은 각각 283, 305, 296으로서 작업가스비 80:20에서 제작된 박막의 특성이 가장 우수하였다. 작업가스비 80:20에서 제작된 박막의 SEM 측정결과 결정이 성장되었음을 확인할 수 있었고 그레인의 크기는 약 10nm였다. -
Zhang, C.L.;Kim, S.C.;Kim, E.D.;Kim, H.W.;Seo, K.S.;Bhang, W.;Cheong, K.Y.;Kim, N.K.;Luo, J.Q.;Bai, J.B.;Wang, X.B. 397
The design concept for 8kV light triggering thyristor(LTT) with integrated BOD was discussed here in detail. The trade-off between light triggering input source againsthigh dV/dt limitation has been treated via grooved P-base for gate design. The main application point used for high voltage DC transmission(HVDC) was represented. -
Oh, Dong-Jin;Kim, Kang-Hyun;Pieh, Sung-Hoon;Sim, Sung-Kyu;Lee, Jong-Su;Kim, Sang-Sig;Kim, Gyu-Tae 401
광학 현미경을 이용한 포토리소그래피 방법을 통해 단일 나노선에 선택적 전극을 형성하였다.$SiO_2$ 기판에 나노선을 도포하여 사용하였고 수 마이크로미터 길이의 단일 나노선에 2단자 전극을 형성하는데 충분한 resolution을 얻을 수 있었다. 리소그래피 노광 광원으로는 현미경에 내장된 할로겐 램프를 사용하였고, 동일 광원으로 관측하기 위해 광학 필터를 사용하였다. 실험 상황에 따라 금속, OHP 필름, 종이 등의 재질로 다양한 마스크를 제작하여 사용하였다. 대물렌즈의 교환을 통해 다양한 projection 배율을 구현하였다. -
In this work, Analytical model for voltage and current characteristics of NPT(Non-PunchThrough) IGBT(Insulated Gate Bipolar Transistor) was represented. voltage and current characteristics models were based on prediction on power loss of NPT IGBT during transient condition. For Analytical current model, excess carrier concentration and accumulated charge in active base width was analyzed with time variance. Analytical models were simulated by varying lifetime of excess minority carrier.
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Edge termination technique is essential fer the fabrication of high volage devices. A proper edge termination technique is also needed in the fabrication of Silicon Carbide power devices for obtaining a stable high blocking voltage properties. Among the many techniques, the field plate formation is the easiest one that can utilize it for commercial usage. The growth of thick thermal oxide is difficult for SiC, however. In this paper, 6A grade SiC schottky barrier diodes(SBD) were fabricated with field plate edge termination. The oxides which is field plate were formed various methods such as dry oxidation, 10%
$N_2O$ nitrided oxidation and PECVD deposition. The reverse characteristics of the SiC SBD with various oxide field plate were investigated. -
In this study, zinc oxide(ZnO) having large misfit(18.2%) with sapphire was tried to be grown on very thin nitride buffer layers. For the creation of various kinds of nitride buffer layer, sapphire surface was modified by an irradiation of nitrogen ion beam with low energy generated from stationary plasma thruster(SPT) at room temperature. After the irradiation of ion beam, Al-N and Al-O-N bonding was identified to be formed as nitride buffet layers. Surface morphology was measured by AFM and then ZnO growth was followed by pulsed laser deposition(PLD). Their properties are analyzed by XRD, AFM, TEM, and PL. We observed that surface morphology was improved and deep level emission related to defects was almost vanished in PL spectra from the ZnO grown on nitride buffer layer.
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The electrical effects of dry-etch on n-type GaN by an inductively coupled
$Cl_2/CH_4/H_2/Ar$ plasma were investigated as a function of ion energy, by means of ohmic and Schottky metallization method. The specific contact resistivity(${\rho}_c$ ) of ohmic contact was decreased, while the leakage current in Schottky diode was increased with increasing ion energy due to the preferential sputtering of nitrogen. At a higher rf power, an additional effect of damage was found on the etched sample, which was sensitive to the dopant concentration in terms of the${\rho}_c$ of ohmic contact. This was attributed to the effects such as the formation of deep acceptor as well as the electron-enriched surface layer within the depletion layer. Furthermore, thermal annealing process enhanced the ohmic and Schottky property of heavily damaged surface. -
As the deep sub-micron devices are recently integrated high package density, novel process method for sub
$0.1{\mu}m$ devices is required to get the superior thin gate oxide characteristics and reliability. However, few have reported on the electrical quality and reliability on the thin gate oxide. In this paper I will recommand a novel shallow trench isolation structure for thin gate oxide$30{\AA}$ of deep sub-micron devices. Different from using normal LOCOS technology, novel shallow trench isolation have a unique 'inverse narrow channel effects' when the channel width of the devices is scaled down shallow trench isolation has less encroachment into the active device area. Based on the research, I could confirm the successful fabrication of shallow trench isolation(STI) structure by the SEM, in addition to thermally stable silicide process was achiever. I also obtained the decrease threshold voltage value of the channel edge and the contact resistance of$13.2[\Omega/cont.]$ at$0.3{\times}0.3{\mu}m^2$ . The reliability was measured from dielectric breakdown time, shallow trench isolation structure had tile stable value of$25[%]{\sim}90[%]$ more than 55[sec]. -
65% of the Korean peninsula is composed of mountainous area, 97% of which is composed of forest. Therefore, there is high possibility of mountain fire because a lot of potential inflammables such as fallen leaves are stacked on the ground. Moreover, most of the overhead transmission lines in Korea are operated on the mountain. However, there has been very little study for the effect of mountain fire on polymeric insulator for transmission line, though the study is significantly required Therefore, in this study the authors observed the deformation of the housing of the insulator under fire with respect to the ignition time, using artificial ignition testing equipment, and investigated electrical and mechanical characteristics of the insulator by dry withstand voltage test, impulse flashover test and tensile load test.
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The demand for electric power keeps growing, and tends to be more effective. Polymer insulators have been manufactured for almost twenty years and the excellent insulation performance of polymer insulators is attractive. Polymeric materials are now widely used as a replacement for inorganic materials such as porcelain or glass for the outdoor insulation of high voltage insulation. GFRP has been used widely as a core materials for polymer insulators. This paper reports the mechanical properties of GFRP for insulators. The bending strength was simulated and evaluated according to the winding angle. The fiber orientation in GFRP has a great effect on the strength of GFRP because the strength of GFRP mainly depends on the strength of fiber. Results of simulated and evaluated strength of GFRP were compared each other. The simulated strength of GFRP rod was different from the evaluated strength. It was caused that the shear stress had a great effect on the strength of GFRP although the stress of parallel direction of GFRP was much higher.
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In this paper, we studied on the electrical safety evaluations of transformer insulation cover. In order to take preventive measures against an electric shock disaster in 22.9kV transformer installation, we put the insulation cover on a transformer charging parts. It needs to be designed so that the insulation covers have superior properties such as, arc-resistance, weather-resistance and heat-resistance, because they are used until the damage and destruction occur. To establish the protection cover to reduce the electrical shock, we analyzed damage mechanism and risk factors which happened by structural fault of an insulation cover in this paper. Also, based on the experimental results, we are planing to suggest new improved insulation cover models.
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The radiation-induced changes taking place in poly(vinylidene fluoride)(PVDF) exposed to
$^{60}Co\;\gamma-ray$ irradiation were investigated in correlation with the applied doses. Samples were irradiated in air at room temperature by$^{60}Co\;\gamma-ray$ to doses in the range of 200 to 1000 kGy. Various properties of the irradiated PVDF were studied using nm, differential scanning calorimetry(DSC) and gel fraction.$^{60}Co\;\gamma-ray$ irradiation was found to induce changes in chemical, thermal, structural properties of PVDF and such changes vary depending on the radiation dose. -
Each electrical apparatus radiates various infrared as the condition of surface and load current. Because heat distribution of the apparatus changes as the condition, it is able to analyze the condition of the apparatus by using the distribution. However, methods having been used to measure the heat distribution cannot compare normal condition with abnormal, and the apparatus has diagnosed by intuition. This paper deal with a program that is able to analyze changed temperature distribution. The program is to analyze temperatures on pixels in selected region of interest or position and is able momently and logically to analyze condition of the apparatus. The results are able to apply to a on-line monitoring system.
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Radio frequency and microwave dielectric heating are well-known electroheating methods, used in industrial applications where non electrically conducting materials are to be heated, dried or otherwise processed. The major reason for considering this technique for any process is based on its unique ability to transfer heat into the volume of an electrically non conducting material such as insulator directly, rather than, via a surface. Conventional heating must first bring heat to the product surface and there after it depends on the physical characteristics and condition of the material as to how effectively this heat is transmitted into the mass. The product would suffer surface damage before the main body is adequately processed. Dielectric heating is applied to enhance conventional heating methods and to drastically shorten the required processing duration. Although the use of dielectric heating has been a well proven technique for several years in some industries, its application in the preheating of FRP has been limited by the insufficient experience. In this paper a method is described for uniform radio frequency heating of preheating of FRP.
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The life of power transformer is basically dependent on the aging deterioration of insulating paper. Analysis of insulating paper for its DP value or tensile strength requires removal of a few strips of paper but direct measurement of this properties is not practical for in-service transformers. For this reason furfural analysis by HPLC has gained increasing favor as a means of estimating degradation of insulating papers in power transformers and this paper reports on the analysis of data on the concentration of furfural in oil samples from about 50 power transformers and the case study. The data showed that furfural content can estimate more accurately aging characteristics compared to concentration of CO,
$CO_2$ . We expect that these results can be useful to predict the aging characteristics and life diagnosis of power transformers and further the study must be continued. -
This paper surveys the latest findings on vegetable-oil-based dielectric coolants in power systems. In recent years, environmental concerns have been increased on the use of poorly biodegradable mineral oils in distribution and power transformers in regions where spills from leaks and equipment failure could contaminate the surroundings. In addition, there are demands to improve equipment efficiencies in power systems. In this reason, researches were started in the mid 1990s to develop a fully biodegradable dielectric coolants. Vegetable oil was considered the most likely candidate for a fully biodegradable dielectric coolants. Vegetable-oil-based dielectric coolants provide the advantages of high level of biodegradability, renewable natural resource, non-toxic properties, enhanced fire safety, more effective cooling and good dielectric strength for many electrical equipment.
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Many of the physical and chemical properties of polymer materials can be altered by high energy radiation. In the present work the exposure to radiation of low density polyethylene(LDPE) included antioxidants was carried out at various doses up to 600kGy at a dose rate of 5kGy/hr in the presence of air at room temperature. The study of the irradiation effects on the material properties has been make by different methods in an integrated way. The experimental data indicate that the decomposition onset temperature(DOT), the crystallinity and the thermoluminescence(TL) with radiation dose. DOT, crystallinity and TL analysis from irradiated PE samples provides useful data for the characterization of radiation-induced oxidation effects on these samples.
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In this paper, the elastic epoxy added elastomer having viscoelasticity to existing epoxy was measured thermal, structural properties through TGA(Thermogravimetric Analysis) and FESEM(Field Emission Scanning Electron Microscope). Specimens were made of dumbbell forms by the ratio of 5[phr], 10[phr], 15[phr], and 20[phr] by regulation with elastomer contents. The measurement temperature dimensions of TGA were
$0[^{\circ}C]\;to\;800[^{\circ}C]$ , and rising temperature was$5[^{\circ}C/min]$ . And we observed structure through FESEM at the magnification of 1000times with the voltage of 15[kV] after breaking by quenching specimens. As thermal analysis results, we could know that thermal and structural properties was improved quantity according to decrease of elastomer contents. In general, thermal, structural properties of 15[phr] was excellent among the specimens. -
In this paper, the properties of temperature dependence and voltage dependence of Aramid paper were studied to understand electrical characteristics, to be regarded as the excellent insulation. Aramid paper and pressboard had being applied various motor, generator. We used to Finite Elemental Method of simulation tool, and improved optimal insulating design of insulating Aramid according to calculated those.
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There have been numerous accelerated aging laboratory tests for evaluating suitability of polymeric materials and devices. Aging test for materials and its full scale device has been conducted, but poor correlation of aging test such as service experience were observed. Service experience plays a key role in the utility section of composite insulators. A meaningful and reliable accelerated aging test is needed for evaluating composite insulator. During the service these insulators are subjected to aging stress such as humidity, pollution, and electrical field, and erosion and tracking of the weathershed occurs. This paper presents the criteria of reliability evaluation and evaluation facilities for 22.9 kV suspension composite insulator. We adopt the criteria of reliability evaluation consist of two test methods. One is CEA tracking wheel test for examining the tracking and erosion performance of composite insulator. The other is multi-stress aging test for examining effects of environmental factors such as UV, temperature, humidity, etc on composite insulator.
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This study has investigated radiation degradation of low density polyethylene(LDPE). Samples were irradiated using a
$Co^{60}\;\gamma-ray$ and ray up to 800 kGy at a dose rate of 5 kGy/hr in the presence of air atmosphere at room temperature. After irradiation, free radical measurement of LDPE has established by electron spin resonance(ESR). Then, each sample was stored for 2 weeks. ESR measurement showed that free radical concentration(FRC) was increased with radiation dose and changed from alkyl, allyl radical to peroxy radical with time. -
Kim, Gyun-Sig;Choi, Beom-Kyu;Byun, Doo-Gyoon;Cho, Kyung-Soon;Kim, Gwi-Yeol;Lee, Chung-Ho;Hong, Jin-Woong 477
In other to estimate an electrical properties of the cross linked polyethylene cable, the partial discharge properties due to charge of electrode shape(needle and bar) and void size were investigated at room temperature. Fast trip and breakdown time were appeared by the closed of needle electrode. The trip and breakdown voltage depend on insulator thickness. As the result, confirmed larger effect of void size than effect of insulator thickness. The effect of voids size than influence of insulation thickness was dominated by internal an electrode of inner insulators. -
A form of measured temperature distribution to estimate condition of a electrical apparatus is a absolute reference for condition of the apparatus, time rate of transition, and difference between reference and currently temperature. Because passive thermography which has not injection of external thermal stimulation shows difference of temperature being on surface of a structure and temperature difference between the structure and back ground, the result could apply only to estimation or monitor for condition of terminal relaxation and overload related with temperature rising. However, a thermal flow in active thermography is differently generated by structure and condition of surface and subsurface. This paper presents the nondestructive testing using the properties and includes the results by heat injection and cooling to the apparatus. The buried discontinuity of subsurface could be detected by these techniques.
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1M, 2M 황산망간 수용액에서 25회 dipping하여 대기중
$450^{\circ}C$ 에서 1시간동안 열분해법으로 Mn 산화물을 형성시켜 Mn$oxide/IrO_2/Ti$ 전극을 제조하였다. 제조된 Mn$oxide/IrO_2/Ti$ 전극은 XRD를 통하여 MnO의 결정구조를 가지는 것을 확인하였다. 또한 전극 표면은 열분해법으로 발생하는 가스에 의해 미소 균열이 형성되어 있었다. dipping 횟수가 증가할수록 피복되는 Mn 산화물의 무게는 감소하였고, 이것은$450^{\circ}C$ 에서의 계속적인 열처리에 의해 열분해되어 제거되는 가스로 인해 무게가 감소됨을 알 수 있었다. 황산망간 수용액의 농도가 높으면 형성되는 Mn 산화물의 무게도 증가하였다. 황산망간 수용액에서 25회까지 dipping을 한 후 전기비저항의 변화는 초기 Mn 산화물이 형성되는 경우에는 비저항이 증가하다가, 일정 횟수 이상에서는 감소함을 알 수 있었다. 또한 황산망간 수용액의 농도가 클수록 비저항이 증가하는 것으로 나타났다. -
In this paper, we investigated impurities content and thermal properties showing by changing the content of carbon black which is semiconductive materials for underground power transmission. Specimens were made of sheet form with the three of existing resins and the nine of specimens for measurement. Impurities content of specimens was measured by ICP-AES(Inductively Coupled Plasma Atomic Emission Spectrometer), and density of specimens were measured by density meter. And then heat capacity(
${\Delta}H$ ) and melting temperature(Tm), specific heat(Cp) were measured by DSC(Differential Scanning Calorimetry). The dimension of measurement temperature was$0[^{\circ}C]\;to\;200[^{\circ}C]$ , and rising temperature was$4[^{\circ}C/min]$ . Impurities content was highly measured according to increasing the content of carbon black from this experimental result also density was increased according to these properties. Specially, impurities content values of the A1 and A2 of existing resins were measured more than 4000[ppm]. Heat capacity, melting temperature, and specific heat from the DSC results were simultaneously decreased according to increasing the content of carbon black. Because metallic impurities of carbon black having Fe, Co, Mn, A1 and Zn are rapidly passed kinetic energy increasing the number of times breaking during the unit time with the near particles according to increasing vibration of particles by the applied heat energy. -
In this paper, the arc and flame characteristics of wires were studied during a short-circuit. The short-circuit angle between wires was fixed as
$90^{\circ}$ and the experiments were conducted on bare copper wires by varying the diameter of wires. The arc and flame patterns were taken by a high speed imaging system. The direction of arc and flame was explained with Lorentz force. After the short-circuit experiment, the shapes of molten wires were analyzed by a stereo microscope. In the results of experiment, the arc and flame of wires showed particular patterns. The flame characteristics by the diameter of wires were analyzed using a HSIS. We could find out the arc characteristics of wires which were different by the diameter. -
In order to detect of insulation problems an early, transformer has to be performed the several tests. The ac current and tan6 of transformer winding insulation were investigated by Schering bridge. Partial discharge(PD) tests are used to evaluate the insulation condition of transformer. The moisture content measurement was conducted using RVM(recovery voltage meter). The RVM test can show that the problem is affecting the paper insulation of transformer. The value of moisture content was 2.3% in main transformer. The insulations of four transformers were judged to be in good condition.
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In this paper we investigated the changes of surface hydrophobic characteristics on silicone rubbers by corona discharge treatment and also investigated the distribution and the behavior of low molecular weight(LMW) silicone fluid which was extracted by solvent-extraction with gel permeation chromatography(GPC). It was shown that contact angle was
$110.5^{\circ}$ on initial sample but contact angle was approximately decreased to$10^{\circ}$ after 45 minutes. However the surface hydrophobic characteristic on silicone rubbers which were removed from corona discharge was recovered within 5 hours. It was shown that corona discharge insured the increase of diffusible LMW chains, which could lead to recover the surface hydrophobicity. The surface hydrophobic characteristics on silicone rubbers and the recovery mechanism based on our results were discussed. -
염해지역 배전선로의 나선 사용에 따른 안전사고방지 및 전력공급신뢰도 향상을 위하여 경동선 도체에 수밀 컴파운드를 충진하고 흑색의 가교폴리에틸렌으로 압출한 절연전선으로 염해지역의 특별고압 가공전선로에 사용하며 내부식성, 수밀성 및 전기 특성이 우수하다. 따라서 본 평가기술에서는 내트래킹, 인장강도, 우수침입방지성, 침적성, 통전내부식성, 교류파괴전압, 박리성, 밀착도 등의 주요한 시험에 대한 시험방법을 검토하고, 시험에 적용하여 시험 시 문제점을 도출하고 시험방법을 정립하고자 한다.
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본 연구에서는 trimethylolpropane triacrylate(TMPTA)를 사용한 겔폴리머전해질의 전기화학적 특성에 대하여 조사하였다. 겔고분자전해질의 상온 이온전도도는 약
$5.0{\times}10^{-3}S{\cdot}cm^{-1}$ 이었으며, 온도가 높아짐에 따라 이온전도도는 증가하였다. TMPTA계 겔고분자전해질은 4.5V(vs.$Li/Li^+$ )까지의 전위영역에서 우수한 전기화학적 안정성을 나타내었으며, TMPTA계 겔고분자전해질을 적용한 리튬이온폴리머전지의 고율 및 저온 방전특성은 양호하였다. 또한 사이클수명도 200 사이클이 진행된 후에도 초기용량의 약 94%라는 높은 용량유지율을 나타내었다. -
The Piezoelectric ceramics for AE(Acoustic Emission) sensor are desired large electromechanical coupling factor, high mechanical quality factor and good characteristic resonance frequency. In this study, the empirical formula of specimens is used
$0.9Pb(Zr_xTi_{1-x})O_3-0.1Pb(Mn_{1/3}Nb_{1/3}Sb_{1/3})O_3$ (PZT-PMNS). The piezoelectric and dielectric characteristic are investigated by sintering temperature and value of x as functions of$Ti^{2+},\;Zi^{2+}$ mol rate. MPB(morphotropic Phase boundary) is defined in the x=0.522. Because it is appeared to the best piezoelectric and dielectric characteristic in the x=0.522, it can be application by AE sensor. PZT-PMNS ceramics without pre-amplifier and filter are tested for detecting of arc signal. The detection characteristic is evaluated wave form, frequency distribution. -
첨가제로
$Bi2O_3$ 를 첨가하고, 소결 온도를 변화시켜 고주파 내역에서 전자기적 특성이 안정적으로 유지될 수 있는 Ni-Zn 페라이트를 제조하고자 하였다.$Bi2O_3$ 의 첨가는 액상을 형성하여 소결을 촉진시키며, 0.3 wt% 첨가된 시편에서는 비정상 입자를 성장시켜 높은 전력 손실 특성을 나타내었다. 그러나$Bi2O_3$ 의 적정한 첨가는 소결을 촉진시켜 밀도를 증가시키며, 균일한 입자를 형성하여 전력 손실이 감소하였다. Ni-Zn 페라이트에$Bi2O_3$ 의 첨가는 공명 주파수 범위의 제어가 가능하며, 소결 촉진 및 밀도의 증가를 가져와 안정적인 재료를 제조할 수 있었다. 투자율의 일정성이 특정 주파수 10MHz 부근에서 급증하면서 급감하는 것은 공명이 생기고, 이러한 현장은 자벽 공명 또는 자벽의 이동에 의해 나타나는 것으로 보여진다. -
Park, Chung-Ryul;Lim, Sung-Hun;Park, Hyoung-Min;Lee, Jong-Hwa;Ko, Seok-Cheol;Choi, Hyo-Sang;Han, Byoung-Sung;Hyun, Ok-Bae 523
According to the continuous demand for power and the growth of electric power utilities, the electric power transmission capacity was increased. The increase of the electric power transmission capacity results in an increase of the fault current level a fault happened. So the superconducting fault current limiter(SFCL) has been reached as the countermeasure for the reduction of the fault current. In this paper, we investigate the fault currents characteristics of resistive type SFCL according to fault angles when AC power source applied. As the fault angles increase, the first peak value of fault current decreased lower. On the other hand, the power burden of SFCL increased. -
High-temperature Superconductor(HTS) tubes were fabricated in term of different diameter, length and thickness by centrigugal forming method. For powder melting by induction the optimum range of melting temperatures and preheating temperature were
$1050^{\circ}C{\sim}1100^{\circ}C\;amd\;550^{\circ}C$ for 30min, respectively. The mould renting speed was 1000rpm. A tube was annealed at$840^{\circ}C$ for 72hours in oxygen atmosphere. The plate-like grains were well developed along the renting direction and typical grain size was about more than$40{\mu}m$ . It was found that Ic values increased with increasing the tube diameter while the Ic decreased with increasing tube thickness. Also Ic decreased with increasing the tube length. The measured Ic in$50mm{\times}70mm{\times}25mm$ tube was about 896Amp. -
Kim, Ho-Sup;Shi, Dongqui;Chung, Jun-Ki;Ha, Hong-Soo;Ko, Rock-Kil;Choi, Soo-Jeong;Park, Yu-Mi;Song, Kyu-Jeong;Yeom, Do-Jun;Park, Chan 531
초전도 coated conductor는 보호층/초전도층/완충층/금속기판의 구조를 가지며 완충층은 다층산화물 박막으로 이루어져 있다. 본 연구에서는 니켈 기판의 원자가 초전도층으로 확산 침투하는 것을 방지하는 YSZ(Yttria Stabilized Zirconia) 박막의 증착방법 및 최적조건에 대하여 소개하고자 한다. 금속타겟을 사용하며 산화반응가스로서 수증기를 사용하는 것을 특징으로 하는 DC reactive sputtering을 이용하여 YSZ를 증착하였으며 기판 온도는$850^{\circ}C$ 이며 증착시 수증기 분압은 1mTorr이었다. YSZ의 최적두께를 알아보기 위하여$CeO_2(12.2nm)/Ni$ 상부에 130nm, 260nm, 390nm, 650nm로 두께를 달리하여 YSZ층을 증착하고 SEM으로 박막 표면상태를 관찰한 결과 columnar grain growth를 하며 두께가 두꺼워 질수록 표면조도가 증가함을 알 수 있었다. 4개의 각 시료위에 thermal evaporation 증착법을 이용하여$CeO_2$ 를 18.3nm의 두께로 증착한 후 PLD를 이용하여 YBCO 초전도 박막을 300nm 두께로 증착하였고 77K, 0T에서 임계전류가 각각 0, 6A, 7.5A, 5A로 측정되었다. 이는 YSZ층의 두께가 두꺼워질수록 기판 구성원자의 확산방지역할을 충실히 하는 반면에 표면조도는 증가함을 알 수 있었다. -
Superconducting transmission power cable is one of interesting parts in power application using high temperature superconducting wire. One of important parameters in high-temperature superconduting (HTSC) cable design is transport current distribution because it is related with current transmission capacity and AC loss. In this paper, the transport current distribution at conducting layers was investigated through the analysis of the equivalent circuit for HTSC power cable with shield layer and compared with the case of without shield layer. The transport current distribution due to the pitch lenght was improved in the case of HTSC power cable with shield layer from the analysis.
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전자기기의 발달과 더불어 정보통신분야의 발달로 고주파 대역에서 우수하고 안정적인 Ni-Zn 페라이트를 제조하기 위해, Ni(니켈)의 일부를 코발트(Co)로 치환하여 결정자기이방성 상수 값을 증가시켜, 공명 주파수를 고주파 대역으로 높이고자 하였다. Co 함량이 증가함에 따라 투자율은 감소하는데, 이는 결정자기 이방성 상수를 크게 하여 공명 주파수를 높이는 결과를 보였으며, x=0.05에서 투자율 75, 공명 주파수 20MHz의 특성을 나타내었다.
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The melting temperature and critical temperature(Tc) of
$YBa_2Cu_3O_x$ with deferent content impurities of PbO and$BaPbO_3$ were studied. When the PbO was used as addition in$YBa_2Cu_3O_x$ , although the melting point could be reduced, the superconductivity(the transition width,${\Delta}T_c$ ) became poor. From the XRD pattern of the sintered mixture of$YBa_2Cu_3O_x$ and PbO it was known that there is a reaction between$YBa_2Cu_3O_x$ and PbO, and the product is$BaPbO_3$ . In the process of the reaction the superconducting phase of$YBa_2Cu_3O_x$ was decreased and in the sample$BaPbO_3$ became the main phase. Therefore the superconductivity was reduced.$BaPbO_3$ was chosen as the impurity for the comparative study. The single phase BaPbO3 was synthesized by the simple way from both mixtures of$BaPbO_3$ and PbO,$BaPbO_3\;and\;PbO_2$ . Deferent contents of$BaPbO_3$ (10%, 20%, 30%) were added in the$YBa_2Cu_3O_x$ . By the phase analysis in the XRD patterns it was proved that there werenot reactions between$YBa_2Cu_3O_x$ and$BaPbO_3$ . When$BaPbO_3$ was used as impurity in$YBa_2Cu_3O_x$ the superconductivity was much better than PbO as impurity in$YBa_2Cu_3O_x$ . But the melting point of$YBa_2Cu_3O_x$ with$BaPbO_3$ could not be found when the temperature was lower than$1000^{\circ}C$ in the DTA measurement. -
Park, Hyoung-Min;Choi, Hyo-Sang;Lim, Sung-Hun;Park, Chung-Ryul;Han, Byoung-Sung;Chung, Hun-Sang;Choi, Chang-Joo;Hyun, Ok-Bae;Chung, Dong-Chul 547
Superconducting fault current limiter(SFCL) is expected to be introduced into electric power system in future as an effective countermeasure for the increase of the short-circuit current due to the growth of the electric power system. SFCL has a merit that the fault current can be limited by the resistance generated when a superconductor transits from a superconducting state to a normal state without additional detecting device. In this paper, we investigated the resistance variance of resistive type SFCL and the fault current limiting characteristics due to the amplitude of source voltage. We could obtain the more effective fault current limiting characteristics of SFCL as the source voltage increased. -
Ha, Dong-Woo;Lee, Dong-Hoon;Yang, Joo-Sang;Kim, Sang-Chul;Hwang, Sun-Yuk;Ha, Hong-Soo;Oh, Sang-Soo 551
Bi-2223 HTS tapes are used widely for application of superconducting power systems. However there are need the properties of high strength and low AC loss. Two kinds of Bi-2223 HTS tapes with different Ag sheath were used to know the effect of sheath alloying for the strength and the resistivity. The workability and reaction degree of superconducting phase at Bi-2223 HTS tapes were investigated. We designed conventional type-Ag/alloy and double sheathed mono filament type-Ag/alloy/alloy in order to increase the strength and resistivity of matrix in Bi-2223 HTS tapes. The effect of axial strain and thermal cycling on the critical current was investigated for the Bi-2223 HTS tapes. Because the workability of double sheath Bi-2223 HTS tape was lower than one sheath Bi-2223 HTS tape, it was need additional softening treatment. Bi-2223 formation reaction was decreased by Ag alloy matrix during sintering process. Two kinds of Bi-2223/Ag tapes with different Ag sheath were used to know the effect of sheath alloying for the tensile strain. Critical current is drastically decreased for Ag/alloy and Ag/alloy/alloy sheathed tapes at tensile strain above 0.24 % and 0.34 %, respectively. This result showed that mechanical strength was increased over than 40 % by introduce double sheath at mono filament stage. -
In this paper, the variable producing conditions of YBCO superconducting powder by use of sol-gel method was investigated. YBCO superconducting powder which was prepared by sol-gel method was shown the characteristic gel formation, particle size and its properties under variable preparation conditions, such as pH, drying and processing time, and powder heat treatment, etc.
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The
$high-T_c$ Superconducting(HTS) antenna which consists of "H" type resonator has the benefits for the miniaturization of antenna in comparison with the microstrip antenna of the similar dimension. To fabricate the "H" type antenna HTS$YBa_2Cu_3O_{7-x}$ (YBCO) thin films were deposited on MgO substrates using rf-magnetron sputtering. Standard etching processes were performed for the patterning of the "H" type antenna. For comparison between normal conducting antennas and superconducting antennas, the gold antennas with the same dimension were also fabricated. An aperture coupling was used for impedance matching between$50\Omega$ feed line and HTS radiating patch. The diverse experimental results were reported in terms of the resonant frequency, the return loss and the characteristics impedance. The "H" type superconducting antenna showed the performance of 1.36 in SWR, 24 % in efficiency, and 14.6 dB in the return loss superior to the normal conducting counterpart.