In this study, We made use of interelectrode capacitively coupled type plasma polymerization apparatus in order to make th organic optical thin films. We adopted in Benzen. Styrene, which have optical function in the organic world. It is manufactured polymerization thin films and examined optics properties by it respectively. We have known that the refractive index decreased as discharging power increased. At the middle wave length as 550[nm], the refractive index of Styrene is smaller than one of Benzen. Then, it is known that measured results are valid because the extinction coefficient(K) is about 10$\^$-4/ for variation of refractive index.

This thesis was investigated on ion-induced characteristics in a-$Se_{75}Ge_{25}$ positive and negative resists for focused-ion-beam microlithogaphy. The exposed a-$Se_{75}Ge_{25}$ inorganic thin film shows an increase in optical absorption after exposure to~$10_{16}$ dose of Ga+. The observed shift in the absorption edge toward longer wavelengths is consistent with that in films exposed to band-gap photons(~$10^{21}$photons/cm2). This result may be related with microstructural rearrangements with in the short range of SeGe network. Due to changes in the short range order, the chemical bonding may be affected, which results in increased chemical dissolution in ion-induced film. Also, this resist exhibits good thermal stability because of its high Tg(~$220^{\circ}C$). When focused ion beams are used for direct exposure of resist over a substrate, unwanted implantation of the substrate may be an issue. A possible way to avoid this is to match the thickness of the resist to the range of ions in the resist. Thin aspect is currently under investigation.

Low temperature device processing has become of great interest within the last few years. In such low temperature processes, SiO$_2$films formed by Plasma-enhanced chemical vapor deposition (PECVD) have been studied. PECVD SiO$_2$films were formed with substrate temperature, and annealing time and temperature of RTP changed, and its'characteristics were obsreved by C-V measurement. We found that the quality of SiO$_2$films formed by PECVD depended on annealing time rather than substrate temperature.

The characteristics of LB ultra-thin film multi-layers were evaluated by the AT-cut quartz crystal. Cholesterol and phosphatidyl choline LB multi-layers were deposited on the surface of quartz crystal by using vertical lifting method and horizontal lifting method. There was good relationship between deposition ratio and frequency shift, and the frequency was more stable at the case of horizontal lifting method to the vertical lifting method.

The poly silicon thin films were prepared by solid phase crystallization at 600$^{\circ}C$ of amorphous silicon films deposited on Corning 7059 glass and (100) silicon wafer with thermally grown SiO$_2$substrate by plasma enhanced chemical vapor deposition with varying rf power, deposition temperature, total flow rate. Crystallization time, microstructure, absorption coefficients were investigated by RAMAN, XRD analysis and UV transmittance measurement. Crystallization time of amorphous silicon films was increased with increasing rf power, decreasing deposition temperature and decreasing total flow rate.

Cadmium sulfide thin films were deposited on glass substrate by Chemical Mist Deposition from solutions containing equimolar (0.1M) cadmium chloride and thiourea [(NH$_2$)$_2$CS] at a mist velocity of 1.6m/sec. Substrate temperatures were ranged between 200$^{\circ}C$ and 400$^{\circ}C$. The microstructure and semiconducting property of the films were investigated using SEM, X-ray diffraction, UV transmittance measurement and four point probe method. All the films have hexagonal structure and diffraction patterns indicate that the intensity of (112) and (101) reflections increase with increasing substrate temperature, whereas (002) reflection substrate temperature, whereas(002) reflection decrease for substrate temperatures between 250$^{\circ}C$ and 350$^{\circ}C$. The films prepared at lower temperature have a significant number of pinholes due probably to entrapped gaseous reaction. Optical transmittance of the films deposited at 350$^{\circ}C$ was about 75%. Optical bandgap of the films were 2.43eV regardless of substrate temperature. The dark resistivity of the films decreased with increasing substrate temperature up to 300$^{\circ}C$ and increased with further increasing substrate temperature. The films were photosensitive and had dark-to-light resistivity ratios of about 10 at room temperature for a white-light photoexcitation intensity of 50mw/$\textrm{cm}^2$.

The GaP crystals are growth by Synthesis Solute Diffusion(SSD) method and its properties are investigated. Etch pits density along vertical direction of ingot is increased from 3.8${\times}$10$^4$cm$\^$-2/ of first freeze to 2.3${\times}$10$\^$5/cm$\^$-2/ of last freeze part. The carrier concentration and mobilities are measured to 197.49$\textrm{cm}^2$/V. sec and 6.75${\times}$10$\^$15/cm$\^$-3/ at room temperature. The temperature dependence of optical energy gap is empilically fitted to E$\_$g/(T)=2.3383-(6.082${\times}$10$\^$-4/T${\times}$/(373.096+T)[eV]. Photo-luminescence spectra measured at low temperature are consist with sharp line-spectra near band-gap energy and radiative recombination between shallow Si-donor to Zn-acceptor and its phonon reprica, and broad emission. The infrared absorption in GaP is cause to phonon coupling modes of TO, LO, LA, TA$_1$, TA$_2$and vibration modes of Ga$_2$O, Si-donor and Zn-acceptor, respectively.

An electro-optical single modulator is fabricated in X-cut LiNbO$_3$by the annealed proton exchange and self-aligned method. First, the effect of annealing is characterized by examining single optical modulator. It is found that by controlling the annealing time, the single optical modulator can be made widely variable. The on-off state of modulator is performed by annealing process and self-aligned electrodes are used in fabricating the single modulator. The optical single modulator has very good figures of merits : the measured on-off switching voltage of about 2.7V.

Effects of the second sintering process on the superconducting characteristics of the (Bi, Pb)SrCaCuO system have been studied. It was found that the optimal calcining temperature of mixed powder may be proper to 820$^{\circ}C$ and the optimal sintering temperture was determined on 845$^{\circ}C$. The 2212 phases transitioned the 2223 phasses during the sintring process and zero resistance was attained at 108 K for the samples sintered for 264 hr. The 2223 phases changed into the 2212 phases and nonsuperconducting phases by the second grinding process. And the 2223 phases did not recover easily by the second sintering process.

Bi-Sr-Ca-Cu-O superconducting system have the low and high Tc phases. In order to get the superconductor above crtitical temperature 100K, we added with Pb and sintered for a long time about 200 hrs. In this study, the influence of superconducting characteristics on the Bi(Pb)SrCaCuO system characteristics on the Bi(Pb)SrCaCuO system dopped Sb was investigate too. Adding Sb of 0.1 mol, the sintering time is short than that dopped Pb only. We could get the critical temperature 102 K at sintered for 24 hrs and 109 K for 210 hrs.

In this study, piezoelectric ceramics of composition 0.08Pb(Mn$\sub$1/3/Sb$\sub$2/3/)O$_3$ were manufactured by the Hot-press method and structural, piezoelectrical properties and temperature stability were investigated with addition of 0, 02, 0.4, 0.6, 0.8, 1.0 [wt%] Cr$_2$O$_3$. Also the SAW delayline was fabricated and the propagation characteristics of SAW were considered with SAW theories.

$C_{22}$-Quinolium-TCNQ LB films were deposited on the glass substrates by Langmuir-Blodgett technique at room temperature. Transfer ratios and UV-visible absorption spectra were studied for X, Y and Z-Types. Absorption in Z-Type was higher than X and Y-Types, which indicates a better arrangement in this type. We have also investigated dc electrical conductivities and ac responses along the horizontal and vertical direction to the film surface. As a result, we are able to determine the capacitance of film and the measured horizontal conductivity was about $10^{-7}$~$10^{-8}$ S/cm.

In this study, charge pumping method was used to investigate the Si-SiO$_2$interface characteristics of the nonvolatile SNOSFET memory devices, fabricated using the CMOS 1 Mbit processes (1.2$\mu\textrm{m}$ design rule), with thin oxide layer of 30${\AA}$ thick and nitride layer of 525${\AA}$ thick on the n-type silicon substrate (p-channel). Charge pumping current characteristics with the pulse base level were measured for various frequencies, falling times and rising times. By means of the charge dynamics in a non-steady state, the average Si-SiO$_2$interface state density and capture cross section were determined to be 3.565${\times}$10$\^$11/cm$\^$-2/eV$\^$-1/ and 4.834${\times}$10$\^$-16/$\textrm{cm}^2$, respectively. However Si-SiO$_2$ interface state densities were disributed 2.8${\times}$10$\^$-11/～5.6${\times}$10$\^$11/cm$\^$-2/～6${\times}$10$\^$11/cm$\^$-2/eV$\^$-1/ in the lover half of energy gap.

We have studied the characteristics of n-and p-channel FETs with submicron channel length fabricated by twin-well process. Threshold voltage variation and potential distribution with channel ion implantation conditions and impurity profile of n-and p-channel region wee simulated using SUPREM-II and MINIMOS 4.0 simulater, P-channel FET had buried-channel in the depth of 0.15 $\mu\textrm{m}$ from surface by counter-doped boron ion implantation for threshold voltage adjustment. As a result of device measurement, we have obtained good drain saturation characteristics for 3.3 [V] opreation, minimized short channel effect with threshold voltage shift below 0.2[V], high punchthrough and breakdown voltage above 10[V] and low subthreshold value.

The nonvolatile SNOSFET EEPROM memory devices with the channel width and iength of 15[$\mu\textrm{m}$]${\times}$15[$\mu\textrm{m}$], 15[$\mu\textrm{m}$]${\times}$1.5[$\mu\textrm{m}$] and 1.9[$\mu\textrm{m}$]${\times}$1.7[$\mu\textrm{m}$] were fabricated by using the actual CMOS 1 [Mbit] process technology. The charateristics of I$\_$D/-V$\_$D/, I$\_$D/-V$\_$G/ were investigated and compared with the channel width and length. From the result of measuring the I$\_$D/-V$\_$D/ charges into the nitride layer by applying the gate voltage, these devices ere found to have a low conductance state with little drain current and a high conductance state with much drain current. It was shown that the devices of 15[$\mu\textrm{m}$]${\times}$15[$\mu\textrm{m}$] represented the long channel characteristics and the devices of 15[$\mu\textrm{m}$]${\times}$1.5[$\mu\textrm{m}$] and 1.9[$\mu\textrm{m}$]${\times}$1.7[$\mu\textrm{m}$] represented the short channel characteristics. In the characteristics of I$\_$D/-V$\_$D/, the critical threshold voltages of the devices were V$\_$w/ = +34[V] at t$\_$w/ = 50[sec] in the low conductance state, and the memory window sizes wee 6.3[V], 7.4[V] and 3.4[V] at the channel width and length of 15[$\mu\textrm{m}$]${\times}$15[$\mu\textrm{m}$], 15[$\mu\textrm{m}$]${\times}$1.5[$\mu\textrm{m}$], 1.9[$\mu\textrm{m}$]${\times}$1.7[$\mu\textrm{m}$], respectively. The positive logic conductive characteristics are suitable to the logic circuit designing.

The Degradation mechanism of the ZnO-varistor fabricated with the content of a 3-Composition seed grain is discussed using the method of Thermally Stimulated Current (TSC). The spectra of TSC is measured in the temperature range of -130～270$^{\circ}C$ with a various forming electric fields E$\sub$f/, temperature T$\sub$f/ time tf, and a various rising rate of temperature. It is observed that there are appeared the peaks of ${\alpha}$, ${\alpha}$$_2$, ${\beta}$ and ${\gamma}$from high temperature in a TSC spectrum. It seems that ${\alpha}$$_1$ peak is due to thermal depolarization of donor ions forming the space charge in the depletion layer, and ${\alpha}$$_2$peak is due to the detrapping of trapped electrons in deep trap level of intergranular layer, and ${\beta}$ peak is due to the thermal exciting of carrier existing in the donor level of grain itself, and ${\gamma}$ peak is due to the thermal exciting of trapped carrier in all shallow trap site randomly distributed in the inner of sample and/or a intrinsic impurity existing in it.

In-doped CdS thin films have been deposited at 150$^{\circ}C$ by simultaneous thermal evaporation of CdS and In. Deposition rate and film thickness were 8A/sec and about 1um, respectively. Indium doping concentration of films varied as Indium source temperature from 500$^{\circ}C$ to 700˚. Properties of In-CdS films have been investigatied by measurements of electrical resistivity, Hall effect, X-ray diffraction and optical trasmission spectra. The conductivity of these films was always n-type. The resistivity, carrier concentration, mobility and optical band gap dependence on Indium source temperature are reported. Carrier concentration and mobility of In-CdS films increased with increasing Indium source temperature: then they decreased. The variation of the optical band gap of In-CdS thin films are related to carrier concentration.

ITO film, 1500${\AA}$ of thickness, onto glass and p-InP wafer was prepared by e-beam evaporator. The bet ITO film had the resistivity 5.3${\times}$10$\^$-3/ $\Omega$-cm, the concentration 6.5${\times}$10$\^$20/cm$\^$-3/, the transmittance above 80%, and the optical energy gap about 3.5eV. The higher pressure of injected oxygen, the less reverse bias saturation current and the more open circuit voltage. Under the optimum evaporation conditions, the efficiency was 7.19% and the series resistance, and the shunt resistance were respectively 8.5%, 3${\alpha}$, and 26K$\Omega$. The interdependence between activation energy and pre-exponential factor was found. We found he surface of the p-InP became n-type and consquently supposed that the buried homojunction formation, that is, n+-ITO/n-InP/p-InP was caused by Sn diffusion or loss of phosphorus in the interface layer.

$n^{+}$-p homojunction InP diodes were fabricated using thermal diffusion of Sulfur into p-type InP substrates(Zn doped, LEC grown, p=2.3${\times}$10$^{16}$c $m^{-3}$). The Sulfur diffusion was carried out at 550$^{\circ}C$, 600$^{\circ}C$, 700$^{\circ}C$ for 4 hours in a sealed quartz ampule(～2ml in volume) containing 5mg I $n_2$ $S_3$ and Img of red phosphorus. The formed junction depth was below 0.5$\mu\textrm{m}$. After the removal of diffused layer on the rear surface of the wafer, the beak ohmic contacts to the p-side were made with a vacuum evaporation of An-Zn(2%) followed by an annealing at 450$^{\circ}C$ for 5 minutes in flowing Ar gas. The front contacts were made with a vacuum evaporation of Au-Ge(12%) followed by an annealing at 500$^{\circ}C$ for 3 minutes in flowing Ar gas. The remarkable sprctral response of the cells obtained at the region of 6000-8000${\AA}$ region. The open circuit voltage $V_{oc}$ , short circuit current density $J_{sc}$ , fill factor and conversion efficiency η of the fabricated pattern solar cells(diffusion condition : at 700$^{\circ}C$ for 4 hours) were 0.660V, 14.04㎃/$\textrm{cm}^2$, 0.6536 and 10.09%, respectively.y.

ITO/TiO$_2$/Se solar cell were fabricated by vacuum deposition method, the Se and TiO$_2$were deposited on the ITO/Glass. Prior to the electrical properties of film, the provide Te between the ITO and the Se film were deposited by substrate temperature 20[$^{\circ}C$] and evaporation time 15[min], next time TiO$_2$ were treated by rf-magnetron sputtering in substrate temperature 250[$^{\circ}C$]. Fabricated ITO/TiO$_2$/Se solar cell were as follows : Open Voltage V$\_$oc/=848[mV], Short Circuit Current I$\_$sc/=10.79[mA/$\textrm{cm}^2$]. Fill Factor FF=0.518, energy conversion efficiency η=4.74[%] under the illumination of AM 1.

Zinc oxide thin films were obtained from zinc acetate-2-water and oxygen by photo-CVD method. (1) The formation of ZnO films sarts from 100[$^{\circ}C$] and the deposition rate increases with increasing substrate temperature. (2) The rate of deposition was also affected by flow rates of O$_2$(reaction gas) and N$_2$(Carrier gas). (3) The deposition rate decreases with increasing O$_2$mole rate. (4) The transmission of the films was independent of oxygen mole rate and it was largely affected substrate temperature. (5) The electric resistivity of th films was largely varied at oxygen mole rate 10[%] and above 20[%], a plateau was encountered. Also, it increases with increasing substrate temperature. As the results, at substrate temperature: 200[$^{\circ}C$]; O$_2$gas mole rate:10[%]; reation time:10[min] pressure: 10$\^$-2/[atm], deposition rate; transmittance; resistivity were 780[A$\^$0/; 94[%]; 7${\times}$10$\^$-2/[$\Omega$$.$cm] respectively.

When relaxation time will be distributed, TSC observed in the experimental procedure was analysed by using a potential model having two equilibrium positions and equations of dielectric properties was derived. Calculation of distribution was made by matrix method and compared/confirmed values obtained by TSC and alternating current which have a correspondence with each other. In this measurement, distribution of activation energy and relaxation time was determined by TSC peak at around 147k/364 of which center is 10$\^$-4/ sec/10$\^$5/ sec respectively at room temperature and also obtained dielctric loss factor at the range of 10$\^$-7/-10$\^$5/Hz. It seems that low temperature peak is local dispersion and high temperature peak have a relation to dielectric transition of the material.

Rutile was among the first dielectric materials used. However, rutile exhibits a very high temperature coefficient of capacitance (about -750[ppm/$^{\circ}C$]) which resticts its practical application. Since this first use of titania, other materials have also been studied with the object of decreasing the temperature dependence whilst retaining favorable dielectric loss, Q, and relative permittivity. The temperature coefficient of temperature compensation capacitor is +100~750[ppm/$^{\circ}C$], dielectric constant 10~150. Low loss ceramics with dielectric constants in the 10～150 range also found application. Recently, their applications are extended in EMI filter and dielectric materials for microwave. There temperature coefficient of dielectric materials approaches 0[ppm/$^{\circ}C$]. The dielectric preperties of zirconia titanate ceramics prepared by addition of $Ta_2O_{5}$ were investigated.

Electrical resistivity and piezoelectric properties were investigated in Lead Zirconate-Titante(PZT) with Nb$_2$O$\sub$5/dopant, fabricated from conventional mixed-oxide powders and molten salt synthesis. The resistivity and electromechanical coupling factor(K$\sub$p/) were increased with increasing Nb content. The reason for increasing of the electrical resistivity below the Curie Temperature(TC). It is believed that the Curie Temperature(Tc). It is believed that the p-type electrical conduction in PZT is due to lead vacancies. The electromechanical coupling factor(K$\sub$p/) and piezoelectric constant d$\sub$33/ were improved. This behavior can be explained as a compensation effect and Nb$\^$5+/ can serve as a donar and contribute electrons to the conduction process. As a result, the optimized Nb$_2$O$\sub$5/ dopants on the PZT specimens were 0.75 wt%.

By addition of 1～5mol% CeO$_2$to powders with composition in the BaO-Nd$_2$O$_3$-TiO$_2$, temperature coefficient of permittivity of sintered ceramics may be decreased from approximately-140ppm/$^{\circ}C$～-65ppm/$^{\circ}C$. Dense, fine grained ceramics were prepared with permitivity within the range of 78～92 and Q above 1000.

This paper deals with the dielectric behaviors of $SF_{6}$ gas and prebreakdown growth caused by lightning impulse voltages in inhomogeneous field perturbed with a fixed needle-shaped protrusion on the electrode. The measuring interpretation of the external current induced by moving charges is described. The temporal growth of prebreakdown is obserbed by using a shunt and photomultiplier. The prebreakdown processes are initiated by the first streamer corona at a needle protrustion, the flashover of the main gap in the positive polarity is very sensitive to the local field and propagates into the gap with the leader mechanism. It is found that the dependence of the prebreakdown phenomena on the polarity of applied voltages is caused by the effect of space charges. In addition, the proposed measuring techniques are very useful to perform the measurements of avalanche currents, corona discharges in inhomogeneous fields ad partial discharges in voids.

Surface acoustic wave(SAW) oscillator offers many attractive features for application to vapor sensors. The perturbation of SAW velocity by the hexafluoropropence plasma polymer thin film has been studied for relative humidity sensing. adsorption of moisture produces rapid aid changes in the properties of the film, resulting in a change in the velocity of surface acoustic waves and, hence, in the frequency of one SAW oscillator. The device used in our experiments have 55 MHZ SAW oscillator fabricated on a LiNbO substrate.