This paper presents the electrochemical etch-stop characteristics of single-crystal silicon in a tetramethyl ammonium hydroxide(TMAH):isopropyl alcohol(IPA):pyrazine solution. Addition of pyrazine to a TMAH:IPA etchant increases the etch-rate of (100) silicon, thus the elapsed time for etch-stop was shortened. The current-voltage (I-V) characteristics of n- and p-type silicon in a TMAH:IPA:pyrazine solution were obtained, respectively. Open circuit potential(OCP) and passivation potential(PP) of n- and p-type silicon, respectively, were obtained and applied potential was selected between n- and p-type silicon PP. The electrochemical etch-stop is applied to the fabrication of 801 microdiaphragms having $20{\mu}m$ thickness on a 5-inch silicon wafer. The averge thicknesses of 801 microdiaphragms fabricated on the one wafer were $20.03{\mu}m$ and standard deviation was ${\pm}0.26{\mu}m$. The silicon surface of the etch-stopped microdiaphragm was extremely flat without noticeable taper or other nonuniformities. The benefits of the electrochemical etch-stop in a TMAH:IPA:pyrazine solution become apparent when reproducibility in the microdiaphragm thickness for mass production is considered. These results indicate that the electrochemical etch-stop in a TMAH:IPA:pyrazine solution provides a powerful and versatile alternative process for fabricating high-yield silicon microdiaphragms.

In this study, we have fabricated nonequilibrium $Fe_{85.6}Zr_{3.3}B_{5.7}Ag_{5.4}$ thin film, which contains an additional insoluble element Ag, by using DC magnetron sputtering method. We have investigated the magnetic properties of amorphous $Fe_{85.6}Zr_{3.3}B_{5.7}Ag_{5.4}$ thin film as a function of rotational field annealing(RFA). After deposition, the amorphous $Fe_{85.6}Zr_{3.3}B_{5.7}Ag_{5.4}$ thin film annealed by rotational field annealing method at $350^{\circ}C$ for an hour was founded to have high permeability of 8680 of 100 MHz, 0.2 mOe, low coercivity of 0.86 De and very low core loss of 1.3 W/cc at 1 MHz, 0.1T.

This paper describes on the fabrication and characteristics of hot-film type micro-flowsensors integrated with Pt-RTD's and micro-heaters on the Si substrate, in which MgO thin-films were used as medium layer in order to improve adhesion of Pt thin-films to $SiO_2$ layer, The MgO layer improved adhesion of Pt thin-films to $SiO_2$ layer without any chemical reactions to Pt thin-films under high annealing temperatures. In investigating output characteristics of the fabricated micro-flowsensors, the output voltages increased as gas flow rate and its conductivity increased due to increase of heat-loss from sensor to external. Output voltage was 82 mV at $N_2$ flow rate of 2000 seem/min, heating power of 1.2W.

Properties of thermoelectric power in PbS thin films by chemical bath deposition were investigated The qualified PbS thin film was gained with the amounts of Thiourea($4-8ml/{\ell}$ ), Triethanolamine (1-2ml) and NaOH(l0ml). The molecular ratio of Pb and S was 3 : 7. Satisfied crystallization rate and deposition rate of PbS were greater at $50^{\circ}C$ than at $30^{\circ}C$. The constant of thermoelectric power in PbS was nearly $ 500uv/^{\circ}k$. The PbS thin film was changed from p-type to n-type semiconductor at around $200^{\circ}C$. In case of heat treatment at $300^{\circ}C$, the sample kept the characteristic of p-type semiconductors up to $250^{\circ}C$.

A capacitance-type humidity sensors in which porous silicon layer is used as humidity-sensing material was developed. This sensors was fabricated monolithically to be compatible with the typical IC process technology except for the formation of porous silicon layer. As the sensors is made as a mesa structure, the correct measurement of capacitance is expected because it can remove the effect of the parasitic capacitance from the bottom layer and another junctions. To do this, the sensor was fabricated using process steps such as localized formation of porous silicon, oxidation of porous silicon layer and etching of oxidized porous silicon layer. From completed sensors, capacitance response was measured on the relative humidity of 25 to 95% at room temperature. As the result the measured capacitance showed the increase over 300% at the low frequency of 120Hz, and showed little dependence on the temperature between 10 to $40^{\circ}C$.

This paper describes on the temperature characteristics of a SDB(silicon-wafer direct bonding) SOI(silicon-on-insulator) Hall sensor. Using the buried oxide $SiO_2$ as a dielectrical isolation layer, a SDB SOI Hall sensor without pn junction isolation has been fabricated on the Si/$SiO_2$/Si structure. The Hall voltage and the sensitivity of the implemented SOI Hall sensor show good linearity with respect to the applied magnetic flux density and supplied current. In the temperature range of 25 to $300^{\circ}C$, the shifts of TCO(temperature coefficient of the offset voltage) and TCS(temperature coefficient of the product sensitivity) are less than ${\pm}6.7{\times}10^{-3}/^{\circ}C$ and ${\pm}8.2{\times}10^{-4}/^{\circ}C$, respectively. These results indicate that the SDB SOI structure has potential for the development of a silicon Hall sensor with a high-sensitivity and high-temperature operation.

Recently, the ceramics of high permittivity are applied to DRAM and FRAM. In this study, (Ba, Sr)$TiO_3$ (BST) ceramics thin films were prepared by Sol-Gel method. BST solution was made and spin-coated on Pt/$SiO_2$/Si substrate at 4000 [rpm] for 10 seconds. Coated specimens were dried at $150[^{\circ}C]$ for 5 minutes. Coating process was repeated 3 times and then sintered at $750[^{\circ}C]$ for 30 minutes. Each specimen was analyzed structure and electrical characteristics by Fractal Process. Thickness of BST ceramics thin films are about $2000{\AA}$. Dielectric constant and loss of thin films was little decreased at 1[KHz] - 1[MHz]. Dielectric constant and loss to frequency were 250 and 0.02 in BST3. The property of leakage current as the realation between the current and the voltage was that change of the leakage current was stable when the applied voltage was 0~3[V].

Carbon is an attractive candidate for use in eletrochemical supercapacitors that depend on charge storage in the electrode/eletorlyte international double layer. Property of an electrical double layer capacitor depend both on the technique used to prepare the electrode and on the current collector structure. The study is to research that $V_2O_5$-carbon (SP270) composite electrode for supercapacitor. The discharge capacitance of $V_2O_5$-SP270 (20wt%) in 1st and 35cyc1e was 14F/g and 8.5F/g at current density of $0.1mA/cm^2$. The discharge process of $V_2O_5$-SP270 (20wt%) composite electrode is larger than that others.

${\beta}{\cdot}In_2S_3$ 및 ${\beta}{\cdot}In_2S_3:Co^{2+}$ 은 $In_2S_3$+S+ZnS를 출발물질로 하여 ($ZnCl_2+I_2$)를 수송매체로 사용한 chemical transport reaction method로 성장시켰다. 성장된 단결정은 tetragonal structure를 갖고 298K에서 indirect optical energy gap은 2.240eV, 1.814eV로 각각 주어졌고, direct optical energy gap은 2.639eV, 2.175eV로 각각 주어졌다. ${\beta}{\cdot}In_2S_3:Co^{2+}$ single crystal에서 impurity optical absorption peak가 나타났으며, 이들 peaks의 origin은 $Co^{2+}(Td)$ ion의 energy level 간의 electron transition임을 crystal field theory를 적용하여 규명하였다.

The optical characteristics of merocyanine dyes have been investigated widely due to their possible application to the high efficiency photo-electric devices. The optical systems are mostly fabricated using vacuum evaporation, casting and Langmuir-Blodgett method and the arrangement and orientation of dye molecules is one of the most important factors in the study on the optical characteristics. In this study, we fabricated the molecular systems through the LB techniques and investigated the optical characteristics of merocyanine dye LB film using the oscillation characteristics of quartz crystal. It was quite interesting behavior that the resistance and frequency shift at the parallel resonance under the UV irradiation.

Piezoelectric ceramics can provide electro-mechanical transduction with high stresses but low displacement. To obtain larger displacements, several mechanical amplifying structures have been used. High alternating displacements can be obtained using resonant structure. In this paper, we designed a bolt-tightened Langevin type ultrasonic vibrator whose resonant frequency is 50[kHz] and ceramics are multilayered. FEM(Finite Element Methode) was employed to calculate. the resonant frequencies and maximum displacements of designed vibrators. The designed resonant frequency and computer calculated frequencies were coincided. When input voltages were increased, the maximum displacements also rose. As AC voltage was applied, the maximum displacement were shown sinusoidal changes. Terminal input admittance over a frequency range spanning the resonant frequency were calculated. ANSYS was used to find resonant frequencies and calculate displacements of vibrators.

In this paper, it is purpose to develop a pulsed $CO_2$ laser with stable output at pulse repetition rate range of 2 KHz. We used a IGBT as a switching device. The laser cavity was fabricated as an axial and water cooled type. It was used a ring blower to increase a cooling effect The laser performance characteristics as parameters, such as pulse repetition rate, gas pressure have been investigated. The experiment was done under 3 electrode-type instead of 2 electrode-type. To achieve 3 electrode-type, we used two pulse-transformers which is operated parallel. As a result, the maximum output was about 28 W at the total pressure of 20 Torr, the gas mixture $Co_2$:$N_2$:He=1:9:15 and the pulse repetition rate of 1300 Hz.

An ultrasonic linear motor was composed of a slider and a stator vibrator including piezoelectric material and elastic material. The ultrasonic linear motors mainly consist of an ultrasonic oscillator which generates elliptical oscillations. Elliptical oscillations are generated by synthesizing two degenerated modes. The design of a stator for an ultrasonic linear motor was optimized with respect to vibration mode and direction of vibratory displacement by employing the finite element method. Applying multilayer piezoelectric ceramics. we found larger elliptical oscillations. The motors were designed by varying the width of stator vibrator and the thickness. the length and the position of multilayer piezoelectric ceramics.

The crimping connection is a permanent connection that maintains mechanical and electrical property for a long time by crimping two conductors. In this paper, we have done a basic study to make a decision the normal or abnormal condition depending on crimping. By using PZT piezo-sensor, we have compared and analyzed crimping waveforms of abnormal conditions(core ommiting, cover biting) at the normal crimping height. And hence the normal or abnormal condition of crimping connections in real time could be determined by comparison of crimping waveforms in the cases of normal crimping, core omitting and cover biting.

This paper present a new sort of multilayer piezoelectric ceramic transformer for AC-adapter. This piezoelectric transformer operates in the second longitudinal vibration mode. The output voltage of the multilayer piezoelectric transformer was simulated using ANSYS, that is one of the FEM analysis program. As results, the minimum displacement was occurred at the two paints where one is the middle of input and the other is middle of output side in second thickness extensional vibration mode. And output voltage was inversely decreased by increasing number of output layers. 缀Ѐ㘰〻ሀ䝥湥牡氠瑥捨湯汯杹

A pulsed Nd:YAG laser has been used in a wide variety of fields : measuring, material processing and so on. In a material processing, it is very important to control the laser energy density. A pulse repetition rate and a pulse width are regarded as the most dominant factors to control the energy density of laser beam. In this study, pulsed Nd:YAG laser system was designed and manufactured to control the laser output usefully and easily. This system adopted the sequential charge and discharge circuit is controlled by 80196 micro- processor. As a result, it is found that laser output is controlled minutely by changing laser input and pulse repetition rate, and usefully by using 80196 microprocessor.

A new type low-pass filter design method based on a coupled line and transmission line theory is proposed to suppress harmonics by attenuation poles in the stop band The design formula are derived using the equivalent circuit of a coupled transmission line. The new low-pass filter structure is shown to have attractive properties such as compact size, wide stop band range and low insertion loss. The seventh-order low-pass filter designed by present method Ins a cutoff frequency of 0.9 GHz with a 0.01 dB ripple level. The coupled line type low-pass filter with stripline configuration was fabricated by using a high-temperature superconducting (HTS ; $YBa_2Cu_3O_{7-x}$) thin film on MgO(100) substrate. Since the HTS coupled line type low-pass filter was proposed with five attenuation poles in stop band such as 1.8, 2.5, 4, 5.5, 62 GHz. The fabricated low-pass filter has improved the attenuation characteristics up to seven times of the cutoff frequency Bemuse of good rejection of the spurious signals and harmonics, our low-pass filter is applicable to mobile base station systems such as cellular, personal communication systems and international mobile telecommunication(IMT)-2000 systems.

We introduce pulsed $CO_2$ laser power supply excited by half-wave rectified 60Hz AC discharge some advantage of cost and size compared to a typical pulsed power supply. AC frequency is adjusted from 10Hz to 60Hz to control laser output. In this laser, a low voltage open loop control for high voltage AC discharge circuits is employed to avoid the HV sampling or switching. The control is achieved by using a ZCS circuit and a PIC one-chip microprocessor that control the gate signal of SCR precisely. The pulse repetition rate is limited by 60Hz due to a high leakage inductance. The maximum laser output was obtained about 20W at the condition of total pressure, 18Torr and pulse repetition rate,60Hz.

In this study, A equipment for measuring the initial permeability of soft-ferrite powder was developed by using a differential transformer coil, and was investigated demagnetizing factors. To measure the initial permeability of magnetic ceramic powder is cumbersome since there are not any measuring equipment and method. Magnetic powder is currently used for a magnetic fluid and microwave absorber materials, and the initial permeability of the magnetic powder is very important to be evaluated a powder for some applications.

An operating principle of PID module was implemented using the load, where the integer in a PID measuring derivate equation were valid in the ranges of 500-9000, 60-1000, and 000-9000, for P, I and D, respectively. A load operation program was designed to investigate the PID theory and its realization process. With it, it was examined the process that the current PV tracts the target SV, By investigating the time when the PV approaches the SV and the rate at which the EV is varied, it is revealed that 1) larger (or Smaller) Kp leads to faster (or slower) approaching of PV to SV, 2) smaller (or larger) Ti results in faster (or slower) approaching of PV to SV, 3) larger (or smaller)$T_d$ causes smaller (or Larger) rate variation in the EV. These observation were found to coincide with those of PID operating characteristics. Though this implementation, it is known for the widespread use of PID module that an improvement should be made in the error of temperature. This, meanwhile, implies that the computational time of conventional manipulation valve must be faster than 0.1 second. It is demanded that an improved PID module including the A/D and D/A module, in itself must be used in conjunction with PLC.

The relationships between driving voltage and the wall charge distribution in the address period of surface discharge type AC Plasma Display Panel have been investigated. The quantity of wall charge on each electrode are detected simultaneously from the electrode current after applying only one addressing discharge pulse. The wall charge Qy on the scan electrode Y is nearly the sum of Qx on the address electrode X and Qz on the sustain electrode Z. The Qy increased with the driving voltage regardless of the kind of electrode, whereas the address time Td decreased, Qz and Qy are increased considerably with the blocking voltage Vz, whereas Qx is decreased. The increase rate of Qx, Qy and Qz for increase in Vz was $-13{\times}10^{-2}$ (pc/Vz), and $60{\times}10^{-2}$ (pc/Vz) and $70{\times}10^{-2}$(pc/Vz), respectively.

The Zns thin films were deposited on non-alkali glass substrate by the Hot Wall method. The thin films grown at various evaporation cell and substrate temperature were characterized by spectrophotometer and X-ray diffraction to investigate the optical and structural characteristics. The deposition rates were increased with increasing the cell temperature, and were decreased with increasing substrate. The optical characteristics of thin films depends on the deposition rates. The band gap energies measured at room temperature with 3.4~3.5eV are smaller than the theoretical value of 3.54eV. All ZnS thin films are oriented in (111) of the principal direction of a zincblende structure.

In this paper, we investigated the relationship between the position of bus electrode and address time, luminance and luminous efficiency in ac PDP of 50in. XGA resolution. When the bus electrode was placed in which was about $140{\mu}m$ apart from discharge gap, the luminous efficiency was the highest and address time was the least. Whereas, when the bus electrode was placed in the edge of ITO, the luminance was the highest.

Photoreactive multilayer films were prepared using long-chin alkyl diesters of p-phenylenediacrylic acid(p-PDA). In spite of the absence of hydrophilic groups in these molecules. they formed stable mono layers on the water surface when mixed with arachidic acid. Surface showed the presence of a condecsed phase and these monolayer could be transferred onto a substrate with Y-type deposition.

Bridge Type Cell structure informed that the efficiency is increased by about 30% compared to the conventional type has been investigated during addressing period. As a result, the addressing time is decreased by about 20% compared to the conventional type. And wall charge distribution was analyzed Quantitatively in three electrodes during addressing period.

The purpose of this study is to research and develop PAn-Carbon composite electrode for Supercapacitor. Supercapacitor cell of PAn-Carbon composite electrode with 1M $LiClO_{4}/IPC$ brings out good capacitor performance below 4.0V. The radius of semicircle of PAn-Carbon composite electrode adding 30wt% Acetylene Black was absolutely small. The total resistance of Supercapacitor cell mainly depended on internal resistance of he electrode. The discharge capacitance of PAn-Carbon on composite with 30wt% Acetylene Black in 1st and 50th cycles was 29 and 31F/g at current density of $1mA/cm^2$. The capacitance of PAn-Carbon composite with 30wt% Acetylene Black capacitor was larger than that of PAn capacitor without Acetylene Black. The coulombic efficiency of supercapacitor at discharge process of 1 and 50 cycles were 94 and 100%. respectively. PAn-Carbon composite Supercapacitor with 30wt.% Acetylene Black content showed good capacitance and stability with cycling.

A new type ac plasma display panels(PDPs) cells are designed and tested electrically and optically. One cells have the structure of sin discharge path shape and small electrode area. The other cells have the non-symmetric structure with a same electrode area. They show a higher luminous efficienccy and a lower power consumption about 30% improvement than the conventional standard ac PDP cells.

Electroluminescent[EL] from conjugated polymers has recently received great attention because polymer light-emitting diodes[LEDs] clearly have potential for applications such as large-area displays. The operation of polymer LEDs is based on double injection of electrons and holes from the electrodes, followed by formation of excitons whose radiative decay results in light emission at wavelength characteristic to the material In this paper, we fabricated the single layer EL device using poly(3-octylthiophene)[P3OT] as emitting material. The orange-red light was clearly visible in a dark room Maximum peak wavelength of EL spectrum saw at 640nm in accordance with photon energy 1.9eV. And we know that ionization energy of P3OT is 4.7eV from the cyclic voltammetry.

The physical, electrical and piezoresitive characteristics of CrN(chromiun nitride) thin-films on silicon substrates have been investigated for use as strain gauges. The thin-film depositions have been carried out by OC reactive magnetron sputtering in an argon-nitrogen atmosphere(Ar-(5~25 %)$N_2$). The deposited CrN thin-films with thickness of $3500{\AA}$ and annealing conditions($300^{\circ}C$, 48 hr) in Ar-10 % $N_2$ deposition atmosphere have been selected as the ideal piezoresistive material for the strain gauges. Under optimum conditions, the CrN thin-films for the strain gauges is obtained a high electrical resistivity, $\rho=1147.65\;{\mu}{\Omega}cm$, a low temperature coefficient of resistance, TCR=-186 ppm/$^{\circ}C$ and a high temporal stability with a good longitudinal gauge factor, GF=11.17.

The performance of ac plasma display panels (PDP) is influenced strongly by the surface glow discharge characteristics on the MgO thin films. This paper deals with the surface glow discharge characteristics and some physical properties of MgO thin films prepared by reactive RF planar unbalanced magnetron sputtering in connection with ac PDP. The samples prepared with the dc bias voltage of -10V showed lower discharge voltage and lower erosion rate by ion bombardment than those samples prepared by conventional magnetron sputtering or E-beam evaporation. The main factor that improves the discharge characteristics by bias voltage is considered to be due to the morphology changes or crystal structure of the MgO thin film by ion bombardment during deposition process.

In this paper, we studied the relation between addition of carbon and electromagnetic wave absorbing properties of ferrite-rubber composite. The ratio of carbon was 7 wt%. As s result, it has been shown that the electromagnetic wave absorbing properties of ferrite-rubber composite are changed by the addition of carbon in composite. And, we can control electromagnetic wave absorbing properties of ferrite-rubber composite by the using of carbon.

In this paper, we studied the relation between heat-treatment temperature of ferrite and electromagnetic wave absorbing properties of ferrite-rubber composite. The heat-treatment temperatures of ferrite are 1200 and $1300^{\circ}C$, 2 hr. As s result. it has been shown that the optimum heat-treatment temperature of ferrite for electromagnetic wave absorber are related to the chemical composition. And, we can control electromagnetic wave absorbing properties of ferrite-rubber composite by the control of heat-treatment temperature of ferrite.

In this paper, we studied the relation between using amount of Ferrite and electromagnetic wave absorbing properties of ferrite-rubber composite. The variation of using amount of Ferrite have been 52 wt.% ~ 62 wt.%. As s result, it has been shown that the electromagnetic wave absorbing properties of ferrite-rubber composite are related to the using amount of Ferrite in composite. And, we can control electromagnetic wave absorbing properties of ferrite-rubber composite by the control of using amount of Ferrite.

The structural changes and the dielectric properties of $(Ba_{1-x}Ca_x)(Mg_{1/3}Ta_{2/3})O_3$ (x=0, 0.2, 0.4, 0.6, 0.8, 1) were investigated. The densities of samples were gradually decreased with increasing x, (BMT=7.69, CMT=5.25 $g/cm^3$). The crystal structure of BMT was a untiltied perovskite structure, however BCMT showed antiphase tilting and antiphase-inphase tilting structure. The dielectric constant($\varepsilon_r$) of the highest value was 33 at x=0.2 (BMT=24, CMT=17). The maximum quality factor was 27,500GHz in BMT. The quality factor· of BCMT was decreased to x<0.2 (5,000GHz), and was gradually increased to x>0.2. The temperature coefficients of dielectric constant was positive at x<0.8, and negative in CMT.

We have investigated the CMP slurry properties of silicate oxide thin films surface on CMP cleaning process. The metallic contaminations by CMP slurry were evaluated in four different oxide films, such as plasma enhanced tetra-ethyl-ortho-silicate glass(PE-TEOS), $O_3$ boro-phospho silicate giass( $O_3$-BPSG), PE-BPSG, and phospho-silicate glass(PSG). All films were polished with KOH-based slurry prior to entering the post-CMP cleaner. The Total X-Ray Fluorescence(TXRF) measurements showed that all oxide surfaces are heavily contaminated by potassium and calcium during polishing, which is due to a CMP slurry. The polished $O_3$-BPSG films presented higher potassium and calcium contaminations compared to PE-TEOS because of a mobile ions gettering ability of phosphorus. For PSG oxides, the slurry induced mobile ion contamination increased with an increase of phosphorus contents.

In this study, the ultrasonic transducer was fabricated with piezoceramic-polymer 1-3 type composites. Pulse-echo response of that transducer in water was investigated with variable water-level. Output of LED was under the control of the signal, which was analyzerd by the self-made Electric Unit. This paper represents automatically water-detecting system with variable water level. There was in good agreement water level between the virtual level and output signal by using the self-made water-detecting system.

The I-V characteristics of $ZnO-Pr_6O_{11}-CoO-Dy_2O_3$ based varistors were investigated in the $Pr_6O_{11}/CoO$ composition ratio range of 0.5/0.5 to 1.0/1.0 and sintering temperature range of 1300 to $1350^{\circ}C$ as the basic study to develop the advanced $Pr_6O_{11}$-based ZnO varistors. All varistors except for $Pr_6O_{11}$/CoO = 0.5/1.0 exhibited the best I-V characteristics at $1350^{\circ}C$. However, the varistors with $Pr_6O_{11}$/CoO= 0.5/1.0 exhibited the best I-V characteristics at $1350^{\circ}C$. The varistors with $Pr_6O_{11}$/CoO= 0.5/1.0 of all varistors exhibited the best I-V characteristics, which the nonlinear exponent is 36.9 and the leakage current is 7.6 ${\mu}A$ Therefore, it was estimated that ZnO-$Pr_6O_{11}-CoO-Dy_2O_3$ ceramics with $Pr_6O_{11}$/CoO= 0.5/1.0 will be usefully used as varistor materials in the future.

ZnO varistor has many merits as compared with SiC varistor. But, because of leakage current and non-linear coefficient, it has unstable function properties. For the purpose of improvement of ZnO varistor properties, ZnO varistor is studied according to sintering condition and mixing condition. ZnO varistor, $ZnO-Bi_2O_2-Y_2O_3-MnO-Cr_2O_3-Sb_2O_3$ series, is fabricated with $Sb_2O_3$ mol ratio(0.5-4[mol%]) and sintered at $1250[^{\circ}C]$ In accordance with $Sb_2O_3$ mol ratio and sintering temperature, grain size and non-linear coefficient are measured. The specimen, $Sb_2O_3$ mol ratio is 1[mol%], has small grain size. It has best properties because of its liquid phase shape. When $Sb_2O_3$ mol ratio is 1[mol%], grain size is decreased.

The electrical properties and stability of ZPCE varistors consisted of $ZnO-Pr_6O_{11}-CoO-Er_2O_3$ ceramics were investigated. $ZnO-Pr_6O_{11}-CoO-Er_2O_3$ based ceramics were sintered at $1300^{\circ}C$ and $1350^{\circ}C$, respectively, without and with 0.5 mol% $Er_2O_3$. The varistors sintered at $1300^{\circ}C$ exhibited a better nonlinearity than that $1350^{\circ}C$. The varistors with $Er_2O_3$ of 0.5 mol% exhibited a high nonlinear exponent of 52.8. However, they easily degraded due to the low density below 85% of TD. On the other hand, the varistors sintered at $1350^{\circ}C$ without $Er_2O_3$ exhibited an extremely poor nonlinearity, but the varistors with $Er_2O_3$ of 0.5 mol% exhibited a relatively good nonlinearity, which the nonlinear exponent is 34.8 and the leakage current is $7.4\;{\mu}A$ Morever, they exhibited a very high stability, which the variation rate of varistor voltage, nonlinear exponent, and leakage current are -0.9%, -2.9%, and +2.7%, respectively, under the third stress $(0.80 V_{1mA}/90^{\circ}C/12h)$ + $(0.85 V_{1mA}/115^{\circ}C/12h)$ + $(0.90 V_{1mA}/120^{\circ}C/12h)$. Consequently, it was estimated that $ZnO-Pr_6O_{11}-CoO-Er_2O_3$ ceramics will be usefully applied to develop the advanced $Pr_6O_{11}$-based ZnO varistors.

Since the reports of CMR(colossal magnetoresistance) effects in some single crystal R-P phase $La_{1+x}Sr_{2-x}Mn_2O_7$, considerable researches have been carried out to find optimum composition and to understand the role of dimensionality in the CMR mechanism of this system. In this study, layered perovskite $Ln_xCa_{1-x}MnO_{4}$ (x=0.5, Ln=Pr, Nd, Sm, Gd) phases were synthesized by solid state reaction and their structures were refined by Rietveld method. Electrical and magnetic properties were measured between room temperature and liquid helium temperature and compared with those of two dimensional $La_{1.4}Sr_{1.6}Mn_2O_7$ phase.

In this experiment, an attempt to use pellets($BaTiO_3$, $TiO_2$, ${\gamma}-Al_2O_3$, sludge) for $NO_x$ removal was conducted The effect of pellets on NO removal from simulated flue gas was experimentally investigated for packed-bed reactor of plate-plate geometry. An experimental investigation has been conducted for NO concentration of 50ppm balanced by air, and gas flow rate of $5{\ell}/min$. Ceramic pellets were used for surface discharge and the sludge pellets was added on $BaTiO_3$ and $TiO_2$ to increase $NO_x$ removal rate. In the result, $NO_x$ removal rate using $TiO_2$ was better than other pellets. $NO_2$ segnificatly generated by using $BaTiO_3$ pellets and sludge pellets used with $BaTiO_3$ decreased $NO_2$ generation.

Deep Interests have been paid on the application of non-thermal plasma technique to solve the environmental pollution problems. $CO_2$ is one of the severe pollutants which cause the acid rain and global warming. In this study, in order to improve the conversion efficiency of $CO_2$, the streamer corona discharge plasma and barrier discharge plasma reactors were made, and the conversion characteristics of $CO_2$ by the corona discharge plasma and some discharge characteristics of these discharge chambers are studied experimentally.

This paper presents the temperature effect of PET Film for insulation EHV Gas VT. We measured the Breakdown Voltage (BDV) and the Partial Discharge Initial Voltage(PDIV) for fresh and heated PET film. In this results, The BDV and PDIV of PET Film was affected by temperature variation and the number of PET Film. The PDIV and BDV of PET Film slightly increased for heating treatment increased as the temperature is increased. however, decreased over about $150^{\circ}C$.

This paper describes the analysis results on the PT ferroresonance at 154 kV GIS (gas Insulated substation by EMTP(Electro- magnetic Transient Program). We had simulated the PT ferroresonance between a potential transformer(PT) and an open circuit breaker's grading capacitance. The ferroresonance leads to very large power frequency overvoltages on PT bus and subsequent insulation failure. The large power can be supplied to the PT by the high voltage on the opened circuit due to the grading capacitance and equivalent capacitance of the buses during the ferroresonance. The damping circuit connected on the secondary winding were considered in the model. The actual countermeasure include a saturable inductor and a resistor series-mounted, but the 2 ohms of damping resistance was used in the computationl model.

The relationship between carrier electron concentration(n) and atmosphere oxygen partial pressure($P_{O_2}$ for pure ZnO calculated by the mass-action law, well-known as n ${\propto}P^{-1/m}_{O_2}$ where m = 4 or 6 for the single or the double ionization of the native donor defects due to its nonstoichiometry, respectively, is found in competition with the calculation result on the basis that the total defect concentration is the sum of those of unionized and ionized defects. Definitively, it is found inconsistent with the calculation result by employing the Fermi-Dirac(FD) statistics for their ionization processes. By application of the FD statistics law to the ionization while assuming the defect formation is still ruled by the mass-action law, the calculation results shows the concentration is proportional to $P^{-1/2}_{O_2}$ whenever they ionize singly and/or doubly. Conclusively we would like to propose the new theoretical relation n ${\propto}P^{-1/m}_{O_2}$ because the ionization processes of donors in ZnO should be treated with the electronoccupation probability at localized quantum states in its forbidden band created by the donor defects, i.e. the FD statistics

Polycrystalline Silicon Thin Film Transistors(Poly-Si TFT's), fabricated at temperature lower than $600^{\circ}C$ are now largely used in many applications, particularly in large area electrons. In this work, electrical stress effects on Poly-Si TFT's fabricated by Solid Phase Crystal(SPC) was investigated by measuring electric properities such as transfer and output characteristics, and channel conductance. Consequently, It is turned out that it should be noted the output characteristics, drain current and channel conductance, strongly degrade around origin.

The effects of Si addition on the precipitation processes of in Al-Cu-Si alloy films were studied by the transmission electron microscopy. Deposition of an Al-1.5Cu-1.5Si (wt. %) film at $305^{\circ}C$ resulted in formation of fine, uniformly distributed spherical $\theta$-phase particles due to the precipitation of the $\theta$ and Si phase particles during deposition. For deposition at $435^{\circ}C$, fine $\theta$-phase particles precipitated during wafer cooldown, while coarse Si nodules formed at the sublayer interface during deposition. The film susceptibility to corrosion is discussed in relation to the film microstructure and deposition temperature.

The fiber contributes the high strength and modulus to the composite. The fiber orientation in FRP has a great effect on the strength of FRP because the strength of FRP mainly depends on the strength of fiber. In this study, FRP was made unidirectionally by pultrusion method and outer part of FRP was made by filament winding method to give fiber orientation to the FRP. The bending strength and bending stresses of FRP rods were simulated according to the winding orientation of glass fiber. The bending strength of FRP was also evaluated. The results of simulation and evaluation Were compared each other to investigate main stresses which affect the fracture of FRP. The main stresses which had a great effect on the strength of FRP were shear stresses.

The effects of Zr on the mechanical workability and tensile strength of Cu-Ni-Mn-Sn-Al alloys have been investigated and the following results were obtained. The mechanical workability of Cu-Ni-Mn-Sn-Al alloys are increased with addition of Zr. And the surface cracks of specimen were not produced in Zr added Alloys. Especially in condition of hot-worked beyond the 90% working ratio, Zr contained specimen showed intra-granule crack propagation but Zr-free specimen showed inter-granule mode. The tensile strength have maximum value in 0.05% Zr contained alloy. The aging mechanism of Cu-Ni-Mn-Sn-Al alloys were varied by Zr addition.

The fiber orientation in FRP has a great effect on the strength of FRP because the strength of FRP mainly depends on the strength of fiber. Unidirectional FRP made by pultrusion method has comparatively lower compressive strength than tensile strength. Compressive strength of unidirectional FRP may be increased by filament winding layer which has tensile stress when compressive stress was loaded. In this study, compressive strength and stresses of FRP rods were simulated according to the winding orientation of glass fiber. Inner part of FRP was made unidirectionally by pultrusion method and outer part of FRP was made by filament winding method. Simulated value and real evaluated compressive strength were compared to investigate stresses which is prominent to the fracture of FRP. The shear stresses had a great effect on the strength of FRP although the stress of parallel direction of FRP was much higher.

소결온도 및 소결시간의 변화가 ZST세라믹의 유전상수 $\varepsilon_{\tau}$, 품질계수 $Q{\cdot}f$ 및 공진주파수의 온도계수 $\tau_f$에 미치는 영향에 대하여 연구하였다. 소결온도를 $1420^{\circ}C$까지 올렸을 때 공진기 섭동방법으로 1.6GHz에서 측정한 품질계수 Q가 가장 높았으나, 소결밀도 및 유전상수는 오히려 감소하였다. 소결시간의 증가에 따른 품질계수 Q는 $1300^{\circ}C{\sim}1380^{\circ}C$ 온도 범위에서는 소폭 상승하였으며, 소결밀도 및 유전상수는 거의 일정하였다. 공진주파수의 온도계수 $\tau_f$는 소결온도 및 소결시간의 변화에는 거의 의존하지 않았다.

The purpose of this study is to research and develop solid polymer electrolyte(SPE) for Li polymer battery. This paper describes temperature dependence of conductivity, impedance spectroscopy, electrochemical properties of PAN/PVDF electrolytes as a function of a mixed ratio. PAN/PVDF based polymer electrolyte films were prepared by thermal gellification method of preweighed PAN/PVDF, plasticizer and Li salt. By adding PVDF and as a function of plasticizer mixed ratio to PAN-LiClO4 electrolyte, its conductivity was higher than that of PAN-$LiClO4_4$ electrolyte. The conductivity of PAN/PVDF electrolytes was $10^{-3}S/cm$. $10PAN10PVDFLiClO_4PC_5EC_5$ electrolyte shows the better conductivity of the others. Steady state current method and ac impedance used for the determination of transference numbers in PAN/PVDF electrolyte film. The transference number of $10PAN10PVDFLiClO_4PC_5EC_5$ electrolyte is 0.45.

We fabricated an IMI-O polymer containing an imidazole group that could form a complex structure between the monolayer and the metal ions at the air-water interface. Also. the monolayer behavior at the air-water interface and the surface morphology of metal-complexed Langmuir-Blodgett(LB) films were investigated by using Brewster angle microscopy(BAM) and Scanning Maxwell-stress Microscopy(SMM). The difference in the BAM and SMM images between the pure water and the aqueous metal ions is attributed to the interactions of the copolymers with the metal ions at the interface and the consequent change of the monolayer organization.

Spinel $LiMn_2O_4$ samples are prepared by heating a $LiOH{\cdot}H_2O/MnO_2$ mixture in air at $800^{\circ}C$ for 36h, and their structure and electrochemical performance are studied by using X-ray diffraction, Cyclic Voltammetry, AC Impedance, and Charge-discharge measurements. It was found that the electrochemical properties of the $LiMn_2O_4$ samples are very sensitive to substituted volume of lithium. Initial impedances of all cathode was similar. Initial resistance was $60{\sim}70{\Omega}$. Reaction peak of Cyclic voltammetry was weak by increase of substituted volume of lithium. $Li[Li_{0.08}Mn_{1.92}]O_4$ and $Li[Li_{0.1}Mn_{1.9}]O_4$ cathode materials showed the charge and discharge capacity of about 125mAh/g at first cycle, and about 95mAh/g after 70th cycle. It showed excellent property in sample revealed good structure and other electrochemical property.

In order to study effects of interface layers between PZT films and electrodes for MFM(Metal-Ferroelectric-Metal) structure capacitors, we have fabricated the capacitors with the Pt/PZT/interface-layer/Pt/$TiO_2/SiO_2/Si$ structure. $PT(PbTiO_3)$ interface layers were formed by sol-gel deposition and PbO, $ZrO_2$ and $TiO_2$ thin layers were deposited by reactive sputtering. $TiO_2$ interface layers result in the finest grains of PZT films compared to $PbO_2$ and $ZrO_2$ layers. On the other hand, PT interface layers result in improved morphology of PZT films and do not significantly change ferroelectric properties. It is also observed that seed layers at the middle and top of PZT films do not give significant effects on grain size but the PT seed layer at the interface between the bottom electrode and the PZT films results in the small grain size.

We have been designed and fabricated a bi-directional ultrasonic linear motor using piezoelectric ceramics. With the finite element method, we design and verify validity of the structure, and determine its optimal structure, size of design variables, material and boundary conditions for proper generation of the ultrasonic waves. Based on the design, a prototype of the ultrasonic linear motor has been fabricated and characterized, which thereby proves practical applicability of this new motor.

In this study, the acoustic transducer of a thin circular disc-type with PZT/Metal was manufactured. The piezoelectric transducer with 200kHz resonance frequency was designed by considering the sharp directivity and the sound pressure. The dielectric and piezoelectric properties of 0.5 weight percent $MnO_2$ and NiO doped $0.1Pb(Mg_{1/3}Nb_{2/3})O_3-0.45PbTiO_3-0.42PbZrO_3$ ceramics were investigated aiming at acoustic transducer applications. Also, the acoustic characteristics of a thin circular disc-type with metal-piezoceramics have been Investigated.

본 연구에서는 압전세라믹스와 금속판으로 구성된 음향트랜스듀서를 모델로 설정하고, 원형평판으로부터 방사되는 내부음장과 트랜스듀서의 외부로 방사되는 음향특성을 수치 해석하였다. 음향트랜스듀서의 내부 유니트를 요소 분할하며 경계조건을 적용시키고, 유한요소법을 이용하여 내부의 음장 분포와 음압 변화량을 가시화하였다. 그리고 트랜스듀서 외부로 방사되는 음압은 가상경계면 외부를 요소분할한 후 다양한 주파수에서 음압 기울기와 등압선을 수치해석하였다.

In 64M DRAM, sub-1/4m NMOSFETs with STI(Shallow Trench Isolation), anomalous hump phenomenon of subthreshold region, due to capped p-TEOS/SiN interlayer induced defect, is reported. The hump effect was significantly observed as channel length is reduced, which is completely different from previous reports. Channel Boron dopant redistribution due to the defect should be considered to improve hump characteristics besides consideration of STI comer shape and recess.

본 연구에서는 압전형 음향변환기를 제작하기 위한 금속과 세라믹스로 적층된 원형의 압전음향소자와 음향변환기 케이스를 설계하였다. 먼저 음향소자인 복합원형평판의 진동운동 방정식을 세우고 그 진동모드를 알아보았다. 음향소자의 세라믹스는 두께 1 mm, 지름 10 mm의 PZT(IV)를 사용하였고, 금속판의 지름과 두께를 다양하게 변화시키면서 음향소자의 공진주파수를 계산하고, 각각의 금속판에 따른 감도지수의 변화를 계산하였다. 설계하고자 하는 음향소자의 공진주파수를 200 KHz로 청하고, 위의 계산을 통하여 음향변환소자에 가장 적합한 금속진동판을 찾아보았다. 음향변환기의 복합원형평판으로 이루어진 음향소자의 물리적 변화에 따른 공진주파수와 감도지수를 구하고 음향변환기 케이스의 공진주파수를 계산하여 압전형 음향변환기에 알맞은 금속진동판과 음향변환기 케이스를 알아보았다.

This paper describes on the fabrication of a SOI substrate by SDB technology and electrochemical etch-stop. The surface of the thinned SDB SOI substrate is more uniform than that of grinding or polishing by mechanical method, and this process was found to be a very accurate method for SOI thickness control. During electrochemical etch-stop, leakage current versus voltage curves were measured for analysis of the open current potential(OCP) point, the passivation potential(PP) point and anodic passivation potential. The surface roughness and the controlled thickness selectivity of the fabricated a SDB SOI substrate were evaluated by using AFM and SEM, respectively.

Antimony doped tin oxide (ATO) thin films were deposited at room temperature by ion-beam sputter deposition (IBSD) technique in oxidizing atmosphere utilizing Sb and Sn metal targets. Effect of Sb doping concentration, film thickness and heat treatment on electrical and optical properties was investigated. The thickness of as-deposited films was controlled approximately to $1500{\AA}$ or $2000{\AA}$, and Sb concentration to 10.8 and 14.9 wt%, as determined by SEM and XPS analyses. Heat treatment was performed at the temperature from $400^{\circ}C$ to $600^{\circ}C$ in flowing $O_2$ or forming gas. The resulting ATO films showed widely changing electrical resistivity and optical transmittance values in the visible spectrum depending on the composition, thickness and firing condition.

Vanadate glass in the $LiO_2-P_2O_5-Bi_2O_3-V_2O_5$ system containing 10mol% glass fonner, $P_2O_5$ and $Bi_2O_3$ was prepared by melting the batch in pt. crucible followed by Quenching on the copper plate. We found that $LiO_2-P_2O_5-Bi_2O_3-V_2O_5$ glass-ceramics obtained from nucleation of glass showed signifieantly higher capacity and longer cycle life than conventionally made crystalline $LiV_3O_{8}$. In the present paper, we describe the charge / discharge properties during crystallization process and find the best crystallization condition of $LiO_2-P_2O_5-Bi_2O_3-V_2O_5$ glass as cathod material.

In the case of immobilizing of glucose oxidase into polypyrrole (PPy) using electrosynthesis, the glucose oxidase (GOx) forms a coordinate bond with the polymer's backbone. However, because of intrinsic insulation and net-chain of the enzyme, the charge transfer and mass transport are obstructed during the film growth. Therefore, the film growth is dull. We synthesized the enzyme electrode by electropolymerization added some organic solvent, A formative seeds of film growth is delayed by adding the solvent. The delay is induced by radical transfer between the solvent and pyrrole monomer. In the case of adding ethanol, the radical transfer shares the contribution of dopant between electrolyte anion and GOx polyanion. This may lead to increase amount of immobilized the enzyme in ppy. However, adding tetrahydrofuran (THF), the radical transfer is more brisk, resulting in short chained polymer. Therefore, the doping level is lowered and then amount of immobilized of enzyme is decreased. For the UV absorption spectra of synthetic solution before synthesis and after, in the case of ethanol added, the optical density was slightly decreased for the GOx peaks. It suggests amount of GOx in the solution was decreased and amount of GOx in the film was increased. We established qualitatively that amount of immobilization can be improved by adding a little ethanol in the synthetic solution. It is due to radical transfer reaction. The radical transfer shares the contribution of dopant between small and fast electrolyte anion and big and slow GOx polyanion.

In this study, we used Brewster-Angle Microscope(BAM) to study on the molecular orientation of monolayer on the water surface. The behaviors of molecules on three different subphase have been observed. Reproducible $\pi$-A isotherm have been obtained only on information about phase transition by molecular area. BAM facilitates the observation of morphology by optical anisotropy and thickness in monolayer and multilayers as BAM is shown to be sensitive to anisotropy of film. Every transition was found by BAM technique, either as a dramatic change in degree of contrast or as a sudden alteration of molecular action and $\pi$-A isotherm.

The scanning Maxwell-stress microscopy (SMM) is a dynamic noncontact electric force microscopy that allows simultaneous access to the electrical properties of molecular system such as surface potential, surface charge, dielectric constant and conductivity along with the topography. The Scanning near-field optical / atomic force microscopy (SNOAM) is a new tool for surface imaging which was introduced as one application of the atomic force microscope (AFM). Operated with non-contact forces between the optical fiber and sample as well as equipped with the piezoscanners, the instrument reports on surface topology without damaging or modifying the surface for measuring of optical characteristic in the films. We report our recent results of its application to nanoscopic study of domain structures and electrical functionality in organic thin films by SMM. Furthermore, we have illustrated the SNOAM image in obtaining the merocyanine dye films as well as the optical image.

The organic electroluminescent(EL) device has gathered much interest because of its large potential in materials and simple device fabrication. We fabricated EL devices which have a blended single emitting layer containg poly(Nvinylcarbazole)[PVK] and poly(3-dodecylthiophene)[P3DoDT]. The molar ratio between P3DoDT and PVK changed with 1:0, 2:1 and 1:1. To improve the external quantum efficiency of EL devices, we applied insulating layer, LiF layer between polymer emitting layer and AI electrode. All of the devices emit orange-red light and it's can be explained that the energy transfer occurs from PVK to P3DoDT. Within the molar ratio 1:0, 2:1 and 1:1, the energy transfer was not saturated, which results in the not appearance of PVK emission in the blue region. In the voltage-current and voltage-light power characteristics of devices applied LiF layer, current and light power drastically increased with increasing with applied voltage. In the consequence of the result, the light power of the device have a molar ratio 1:1 with LiF layer was about 10 times larger than that of the device without PVK at 6V.

SrS:Ce thin films for blue EL devices are prepared by Hot Wall Method and their crystallographic and optical characteristics are investigated by various methods. Deposition rates are decreased with substrate temperature, but increased with SrS cell temperature. The crystallographic characteristics are strongly affected by deposition rates. The peak of photoluminescence are found at 470 and 540nm.