In this study. the recovery of plasma induced damage in the etched PZT thin film with $O_2$ re-annealing have been investigated. The PZT thin films were etched as a function of $Cl_2/Ar$ and additive $CF_4$ into $Cl_{2}(80%)/Ar(20)%$. The etch rates of PZT thin films were $1600\dot{A}/min$ at $Cl_{2}(80%)/Ar(20)%$ gas mixing ratio and $1970\dot{A}/min$ at 30 % additive $CF_4$ into $Cl_{2}(80%)/Ar(20)%$. The etched profile of PZT films was obtained above 70 by SEM. In order to recovery properties of PZT thin films after etching, the etched PZT thin films were re-annealed at various temperatures in $O_2$ atmosphere. From the hysteresis curves, ferroelectrical properties are improved by $O_2$ re-annealing process. The improvement of ferroelectric behavior at annealed sample is consistent with the increase of the (100) and (200) PZT phase revealed by x-ray diffraction (XRD). From XPS analysis, intensity of Pb-O, Zr-O and Ti-O peak are increased and the chemical residue peak is reduced by $O_2$ re-annealing. The ferroelectric behavior consistent with the dielectric nature of TixOy is recovered by $O_2$ recombination during rapid thermal annealing process. From AFM images, it shows that the surface roughness of re-annealed sample after etching is improved.

We investigated the etching characteristics of $YMnO_3$ thin films in high-density plasma etching system. In this study. $YMnO_3$ thin films were etched with $CF_{4}/Ar$ gas chemistries in inductively coupled plasma (ICP). Etch rates of $YMnO_3$ were measured according to gas mixing ratios. The maximum etch rate of $YMnO_3$ is 18 nm/min at $CF_{4}/(CF_{4}+Ar)$ of 20%. In optical emission spectroscopy (OES) analysis, F radical and Ar* ions in plasma at various gas chemistries decreased with increasing $CF_4$ content. Chemical states of $YMnO_3$ films exposed in plasma were investigated with x-ray photoelectron spectroscopy (XPS) and secondary ion mass spectrometry (SIMS). There is a chemical reaction between metal (Y, Mn) and F and metal-fluorides were removed effectively by Ar ion sputtering. $YF_x$, $MnF_x$ such as YF, $YF_2$, $YF_3$ and $MnF_3$ Were detected using SIMS analysis. The etch slope is about $65^{\circ}C$ and free of residues.

We proposed that concentrations of cartier electron as well as ionized donor defects in nonstoichiometric ZnO are proportional to $P^{-1/2}_{O_2}$, whenever they ionizes singly or doubly, by employing the Fermi-Dirac (FD) statistics for ionization of the native thermal defects $Zn_i$ and $V_o$. The effect of acceptor defect, zinc vacancy $V_{Zn}$made by the Frenkel and Schottky disorder reactions, on carrier concentrations was discussed. By application of the FD statistics law to their ionization while the formation of defects is assumed governed by the mass-action law, the calculation results indicate; 1. ZnO shows n-type conductivity with $N_D>$N_A$ and majority concentration of $n{\propto}\;P^{-1/2}_{O_2}$ in a range of $P_{O_2}$, lower than a critical value. 2. As the concentration of acceptor $V_{Zn}$ increases proportional to $P^{1/2}_{O_{2}}$, ZnO made at extremely high $P_{O_{2}}$, can have p-type conductivity with majority concentration of p ${\propto}\;P^{-1/2}_{O_{2}}$. One may not, however, obtain p-type ZnO if the pressure for $N_{D}<$N_{A}$ is too high.

A thyristor switch circuit for capacitor discharge application, of which the equivalent circuit includes a resistor between cathode and gate of a reverse-conducting thyristor and an avalanche diode anti-parallel between its anode and gate to set thyristor tum-on voltage, is monolithically integrated by planar process with AVE double-implantation method. To ensure a lower breakdown voltage of the avalanche diode for thyristor tum-on than the break-over voltage of the thyristor, $p^+$ wells on thyristor p base layer are made by boron implantation/drive-in for a steeper doping profile with higher concentrations while rest p layers of thyristor and free-wheeling diode parts are formed with Al implantation/drive-in for a doping profile of lower steepness. The free-wheeling diode part is isolated from the thyristor part by formation of separated p-well emitter for suppressing commutation between them, which is achieved during the formation of thyristor p-base layer.

ZnO thin film had been deposited on the glass by Evaporation Ramped method. and electrical and resistivity were investigated. Evaporation gas($O_{2}$,) pressure was 10mTorr~100mTorr, chamber pressure was $2{\times}10^{-5}$, and then ZnO film were deposited. AI-doped ZnO thin film had the lowest resistivity ($1{\times}10^{4}\;{\Omega}{\cdot}cm$), and then carrier concentration and Hall mobility were$6.27{\times}10^{20}\;cm^{3}$ and $22.04 cm^{2}/V{\cdot}s$, respectively. When ZnO film had been deposited by Ramp6ed method compared with normal method and investigated resistivity.

Chemical mechanical polishing(CMP) process has been widely used to planarize dielectrics, which can apply to employed in integrated circuits for sub-micron technology. Despite the increased use of CMP process, it is difficult to accomplish the global planarization of free-defects in inter-level dielectrics (ILD). Especially, defects like micro-scratch lead to severe circuit failure, and affects yield. CMP slurries can contain particles exceeding $1{\mu}m$ size, which could cause micro-scratch on the wafer surface. The large particles in these slurries may be caused by particle agglomeration in slurry supply line. To reduce these defects, slurry filtration method has been recommended in oxide CMP. In this work, we have studied the effects of filtration and the defect trend as a function of polished wafer count using various filters in inter-metal dielectric(IMD)-CMP. The filter installation in CMP polisher could reduce defect after IMD-CMP. As a result of micro-scratches formation, it shows that slurry filter plays an important role in determining consumable pad lifetime.

As the integrated circuit device shrinks to smaller dimensions, chemical mechanical polishing (CMP) process was required for the global planarization of inter-metal dielectric (IMD) layer with free-defect. However, as the inter-metal dielectrics (IMD) layer gets thinner, micro-scratches are becoming as major defects. Micro-scratches are generated by agglomerated slurry, solidified and attached slurry in pipe line of slurry supply system. To prevent agglomerated slurry particle from inflow, we installed 0.5${\mu}m$ POU (point of use) filter, which is depth-type filter and has 80% filtering efficiency for the $1.0{\mu}m$ size particle. In this paper, we studied the relationship between defect generation and pad count to understand the exact efficiency of the slurry filtration, and to find out the appropriate pad usage. Our preliminary results showed that it is impossible to prevent defect-causing particles perfectly through the depth-type filter. Thus, we suggest that it is necessary to optimize the flow rate of slurry to overcome depth type filters weak-point, and to install the high spray of de-ionized Water (DIW) with high pressure.

In this work, we have been studied the characteristics of each nitride film for the optimization of PMD(pre-metal dielectric) liner nitride process, which can applicable in the recent semiconductor manufacturing process. The deposition conditions of nitride film were splited by PO (protect overcoat) nitride, baseline, low hydrogen, high stress and low hydrogen, respectively. And also we tried to catch hold of correlation between BPSG(boro-phospho silicate glass) deposition and densification. Especially, we used FTIR area method for the analysis of density change of Si-H bonding and Si-NH-Si bonding, which decides the characteristics of nitride film. To judge whether the deposited films were safe or not, we investigated the crack generation of wafer edge after BPSG densification, and the changes of nitride film stress as a function of RF power variation.

The high permittivity are applied to DRAM and FRAM. (Ba,Sr)$TiO_3$ (EST) thin films were prepared by Sol-Gel method. BST solution was made and spin-coated on $Pt/SiO_2/Si$ substrate at 4000 [rpm] for 10 seconds in a time coating. Coated specimens were dried at $90[^{\circ}C]$ for 5 minutes. Coating process was repeated from 3 times to 5 times and then sintered at $750[^{\circ}C]$ for 30 minutes. Each specimen was analyzed structure and electrical characteristics. Thickness of BST ceramics thin films are about 2600-2800[$\AA$] in 3 times. Dielectric constant of thin films was little decreased at 1[KHz]~1[MHz]. Dielectric constant and loss to frequency were 250 and 0.02 in BST3. The property of leakage current was stable When the applied voltage was 0~3[V] Leakage current was $10^{9}\sim10^{11}$[A] at 0~3[V].

To estimate the influence of electrical properties due to the poly back seal(PBS). we were investigated defect density in surface by deposition thickness and breakdown voltage in specimens. Deposition thickness of specimen is prepared from 7,000[$\AA$] to 13,000[$\AA$], respectively. From the results, it is confirmed that PBS deposition thickness of 10,000[$\AA$] among the specimen is decreased defect density by contribution of the gettering effect.

The thermoelectric refrigeration technologies have no moving parts. compressor, or piping required. In this study, the basic capacity of thermoelectric devices and development on some thermoelectric refrigerator were reviewed and basic technical concepts related with many kinds of thermoelectric materials were discussed. Especially the result of performance test on thermoelectric refrigerator whose minimum temperature of $-2^{\circ}C$ was introduced briefly.

The $SiH_4$ soak step is widely used during the CVD Tungsten(W) plug deposition process on the Ti/TiN barrier metal to prevent the $WF_6$ attack to the underlayer metal. We tried to reduce or skip the time of $SiH_4$ soak process to optimize W-plug deposition process on Via. The electrical characteristics including Via resistance and the structure of W film are affected according to $SiH_4$ soak time. The elimination possibility of $SiH_4$ soak process was confirmed in the case of that the CVD W film grows on the stable Ti/TiN underlayer.

This study describes the effect of $\tau$ -ray irradiation on the properties of insulation materials for low voltage cables in a nuclear power plant. The radiation effects were characterized by measuring OIT, FTIR, electrical properties of the irradiated specimens. As a result, they showed the decrease of OIT and the increase of chemical structural defects with the increase of $\tau$ -ray amount

NiO-doped $WO_3$ thick films were prepared by a screen printing technique. The electrical property and microstructure of the films were investigated with the partial pressure of oxygen and the amount of NiO. The grain size of NiO-doped $WO_3$ was smaller than that of undoped $WO_3$, but the grain size of 0.1, 1, 10 mol% NiO-doped $WO_3$ were nearly the same. The electrical conductance of the $WO_3$ thick films decreased with the oxygen partial pressure, and increased with the amount of NiO to the limit of solid solution. The variation of the electrical conductance with temperature is not so large in the extrinsic region, but it changed rapidly in the intrinsic region. The conductance decreased with adsorption of oxygen in the intermediate range between the extrinsic and intrinsic region.

$SrBi_2Ta_2O_9$ thin films were etched at high-density $Cl_2/CF_4/Ar$ in inductively coupled plasma system. The chemical reactions on the etched surface were studied with x-ray photoelectron spectroscopy and secondary ion mass spectrometry. The etching of SBT thin films in $Cl_2/CF_4/Ar$ were chemically assisted reactive ion etching. The maximum etch rate was 1060 Am /min in $Cl_2$(20)/CF_4(20)/Ar(80). The small addition of $Cl_2$ into $CF_4$(20)/Ar(80) plasma will decrease the fluorine radicals and the increase CI radical. The etch profile of SBT thin films in $Cl_2/CF_4/Ar$ plasma is steeper than in $CF_4$/Ar plasma.Ā저會Ā저ﶖ⨀⡌ឫഀĀ᐀會Ā᐀㡆ﶖ⨀쁌ឫഀĀ᐀會Ā᐀遆ﶖ⨀郞ග堂瀀ꀏ會Āﶖ⨀〲岒ऀĀ᐀會Ā᐀䁇ﶖ⨀젲岒Ā㰀會Ā㰀顇ﶖ⨀끩Ā㈀會Ā㈀ﶖ⨀䡪Ā᐀會Ā᐀䡈ﶖ⨀Ā᐀會Ā᐀ꁈﶖ⨀硫Ā저會Ā저ﶖ⨀샟ගကĀ저會Ā저偉ﶖ⨀栰岒ఀĀ저會Ā저ꡉﶖ⨀1岒Ā저會Ā저Jﶖ⨀惝ග؀Ā؀會Ā؀塊ﶖ⨀ග㼀Ā切會Ā切끊ﶖ⨀⣟ගఀĀ搀會Ā搀ࡋﶖ⨀큭킢Ā저會Ā저

The conventional tracking testing as IEC-60587 is widely used In surface aging measurement of outside insulator because those testing can carry out very short time in Lab testing. Also IEC-60587 testing is able to offer the standard judgement of relative degradation level of outside HV machine. Therefore it is very useful method compare to previous conventional tracking testing method and effective Lab testing method. But surface discharges(SD) have very complex characteristics of discharge pattern so it is required estimation research to development of precise analysis method. In recent, the study of IIR-camera is carrying out discover of temperature of power equipment through condition diagnosis and system development of degradation diagnosis. In this study, SD occurred from IEC-60587 is measured with partial temperature distribution in real time, the degradation grade of SD is analyzed through produced patterns in IEC-60587 according to applied time.

Recently, the HFPD measurement testing is widely used in partial discharge measurement of HV machines because HFPD measurement testing receives less influence of external noise and has a merit of good sensitivity. Also HFPD testing is able to offer the judgement standard of degradation level of HV machine and can detect discharge signals in live-line. Therefore it is very useful method compare to previous conventional PD testing method and effective diagnosis method in power transformer that requires live-line diagnosis. But partial discharges have very complex characteristics of discharge pattern so it is required continuous research to development of precise analysis method. In recent, the study of partial discharge is carrying out discover of initial defect of power equipment through condition diagnosis and system development of degradation diagnosis using HFPD(High Frequency Partial Discharge) detection. In this study, simulated transformer is manufactured and HFPD occurred from transformer is measured with broad band antenna in real time, the degradation grade of transformer is analyzed through produced patterns in simulated transformer according to applied voltages.

In order to compare the barrier properties of Ta-N/Si(001) with those of Ta-N/Ta/Si(001), we studied structural properties of films grown by RF magnetron sputtering with various $Ar/N_2$ ratios. To evaluate the barrier properties, the samples were annealed in a vacuum chamber. Ex-situ x-ray scattering measurements were done using an in-house x-ray system. With increasing nitrogen ratio in Ta-N/Si(001), the barrier property of Ta-N/Si(001) was enhanced, finally failed at $750^{\circ}C$ due to the crystallization and silicide formation. Compared with Ta-N/Si(001), Ta-N/Ta/Si(001) forms silicides at $650^{\circ}C$. However it does not crystallize even at $750^{\circ}C$. With increasing nitrogen composition in Ta-N/Ta/Si(001), the formation of tantalum silicide was reduced and the surface roughness was improved. To observe the surface morphology of Ta-N/Ta/Si(001) during annealing, we performed an in-situ x-ray scattering experiment using synchrotron radiation of the 5C2 at Pohang Light Source(PLS). Addition of Ta layer between Ta-N and Si(001) improved the surface morphology and reduced the surface degradation at high temperatures. In addition, increasing $N_2/Ar$ flow ratio reduced the formation of tantalum silicide and enhanced the barrier properties.

In this study, $CeO_2$ thin films were etched with a $CF_4/Ar$ gas combination in inductively coupled plasma (ICP), The maximum etch rate of $CeO_2$ thin films is $270{\AA}/min$under $CF_4/(CF_4+Ar)$ of 0.2, 600 W/-200 V, 15 mTorr, and $25^{\circ}C$. The selectivities of $CeO_2$ to PR and SBT are 0.21, 0.25. respectively. The surface reaction of the etched $CeO_2$ thin films was investigated with x-ray photoelectron spectroscopy (XPS). There is a chemical reaction between Ce and F, Compounds such as $Ce-F_x$ are remains on the surface of $CeO_2$ thin films. Those products can be removed by Ar ion bombardment effect, The results of secondary ion mass spectrometer (SIMS) were equal to these of XPS. Scanning electron microscopy (SEM) was used to examine etched profiles of $Ce-F_x$ thin films. The etch profile of over-etched $CeO_2$ films with the $0.5 {\mu}m$ line was approximately $65^{\circ}$.