Abstract
$SrBi_2Ta_2O_9$ thin films were etched at high-density $Cl_2/CF_4/Ar$ in inductively coupled plasma system. The chemical reactions on the etched surface were studied with x-ray photoelectron spectroscopy and secondary ion mass spectrometry. The etching of SBT thin films in $Cl_2/CF_4/Ar$ were chemically assisted reactive ion etching. The maximum etch rate was 1060 Am /min in $Cl_2$(20)/CF_4(20)/Ar(80). The small addition of $Cl_2$ into $CF_4$(20)/Ar(80) plasma will decrease the fluorine radicals and the increase CI radical. The etch profile of SBT thin films in $Cl_2/CF_4/Ar$ plasma is steeper than in $CF_4$/Ar plasma.Ā 저 會Ā저 ﶖ⨀ ⡌ឫ ഀ Ā ᐀ 會Ā᐀ 㡆ﶖ⨀ 쁌ឫ ഀ Ā ᐀ 會Ā᐀ 遆ﶖ⨀ 郞ග 堂 瀀 ꀏ 會Ā ﶖ⨀ 〲岒 ऀ Ā ᐀ 會Ā᐀ 䁇ﶖ⨀ 젲岒 Ā 㰀 會Ā㰀 顇ﶖ⨀ 끩 Ā ㈀ 會Ā㈀ ﶖ⨀ 䡪 Ā ᐀ 會Ā᐀ 䡈ﶖ⨀ Ā ᐀ 會Ā᐀ ꁈﶖ⨀ 硫 Ā 저 會Ā저 ﶖ⨀ 샟ග က Ā 저 會Ā저 偉ﶖ⨀ 栰岒 ఀ Ā 저 會Ā저 ꡉﶖ⨀ 1岒 Ā 저 會Ā저 Jﶖ⨀ 惝ග Ā 會Ā 塊ﶖ⨀ ග 㼀 Ā 切 會Ā切 끊ﶖ⨀ ⣟ග ఀ Ā 搀 會Ā搀 ࡋﶖ⨀ 큭킢 Ā 저 會Ā저
