In this study, electrical properties of multilayer piezoelectric transformer sintered at $900^{\circ}C$ using pure Ag internel electrode was investigated. This multilayer piezoelectric transformer was fabricated as a ring-dot type. The multilayer piezoelectric transformer should have hight electromechanical coupling factor ($k_p$) and electromechanical qualiy factor ($Q_m$) in order to increase the efficiency of energy conversion between electrical and mechanical energy. The maximum values of $k_p$ and $Q_m$ showed 0.552 and 1320, respectively.

Nowadays, application fields using piezoelectric ceramics are various. On this paper, Characteristics of thin-type ultrasonic motor generating elliptical displacements has been analyzed by FEM, and then the motor was fabricated. Structure of the motor consists of sixteen ceramic pieces attached elastic body upper and bottom. Principle of the motor is to apply alternative voltages which have 90 phase difference to attached ceramics, and then elliptical displacements is generated at four edges of clastic body. And then rotor is rotated by the elliptical displacements. In case of ceramic thickness 1.5[mm], characteristic of the highest speed was found at 79[kHz]. In case of ceramic thickness 2[mm], Characteristic of the highest speed was observed at 77.5 [kHz]. Consequently, speed and torque of USM were increased linearly with increasing in applied voltage.

$(Na_{0.5}K_{0.5})NbO_3$ (NKN) ceramic with 1.5 mol% CuO added (NKNC) was well sintered even at a low temperature of $900^{\circ}C$ with the addition of ZnO. Most of the ZnO reacted with the CuO and formed the liquid phase that assisted the densification of the specimens at $900^{\circ}C$. A few $Zn^{2+}$ ions entered the matrix of the specimens and increased the coercive field ($E_c$) and $Q_m$ values of the specimens. High-piezoelectric properties of $k_p=0.37$, $Q_m=755$, and ${\varepsilon}_3\;^T/{\varepsilon}_0=327$ were obtained from the NKNC ceramics containing 1.0 mol% ZnO sintered at $900^{\circ}C$ for 2 h.

In this study, microstructural and piezoelectric characteristics of PNW-PMN-PZT ceramics manufactured using attrition milling method were investigated. Sintering temperature of the ceramics was varied from $980^{\circ}C$ to $1100^{\circ}C$. At the specimen sintered at $1100^{\circ}C$, mechanical quality factor(Qm) and dielectric constant showed the maxinum values of 2,373 and 1438, respectively. At the specimen sintered at $1080^{\circ}C$, electromechanical coupling factot(kp) also showed the maxinum value of 0.524.

Energy harvesting from the environment has been of great interest as a standalone power source of wireless sensor nodes for Ubiquitous Sensor Networks(USN). In particular, the piezoelectric energy harvesting from ambient vibration sources has intensively researched because it has a relatively high power density comparing with other energy scavenging methods. Through recent advances in low power consumption RF transmitters and sensors, it is possible to adopt a micro-power energy harvesting system realized by MEMS technology for the system-on-chip. However, the MEMS energy harvesting system has some drawbacks such as a high natural frequency over 300 Hz and a small power generation due to a small dimension. To overcome these limitations, we devised a novel power generator with a spiral spring structure as shown in the figure. The natural frequency of a cantilever could be decreased to the usable frequency region (under 300 Hz) because the natural frequency depends on the length of a cantilever. In this study, the natural frequency of the energy harvester was a lower than a normal cantilever structure and sufficiently controllable in 50 - 200 Hz frequency region as adjusting weight of a proof mass. Moreover, the MEMS energy harvester had a high energy conversion efficiency using a shear mode ($d_{15}$) is much larger than a 33 mode ($d_{33}$) and the energy conversion efficiency is proportional to the piezoelectric constant (d). We expect the spiral type MEMS power generator would be a good candidate for a standalone power generator for USN.

We report the enhancement of hole injection using thermally evaporated $CuO_x$ layer between Ag anode and 4,4'-Bis[N-(1-naphthyl)-N-phenylamino]biphenyl ($\alpha$-NPD) in top-emitting organic light-emitting diode (TEOLED). The operation voltage at the current density of $1mA/cm^2$ of TEOLEDs decreased from 6.2 V to 5.0 V as the $CuO_x$ layer inserted between Ag and $\alpha$-NPD. $\alpha$-NPD was deposited in situ on Ag/$CuO_x$ and Ag anodes, and their interface dipole energies were quantitatively determined using synchrotron radiation photoemission spectroscopy. The dipole energy of Ag/$CuO_x$ was lower by 0.05 eV even though Ag/$CuO_x$ had a higher work function. The work function of Ag/$CuO_x$ is higher by 0.53 eV than that of Ag, resulting in a decrease of the turn-on voltage via reduction of hole injection barrier.

In order to design for nano structured materials with enhanced thermoelectric properties, the alloys in the pseudo-binary $Bi_2Te_3$-PbTe system were investigated for their micro structure and thermal properties. For this synthesis the liquid alloys were cooled by water quenching method. The micro structure images were taken by using electron probe micro analyzer (EPMA). Dendritic and lamellar structures were clearly observed with the variation in the composition ratio between $Bi_2Te_3$ and PbTe. It was confirmed that a metastable compounds is $PbBi_2Te_4$ in the The $Bi_2Te_3$-PbTe system. The change in the composition increasing $Bi_2Te_3$ ratio causes to change structure from dendritic to lamellar. Seebeck coefficient of alloys 5 which the mixture rate of $Bi_2Te_3$ is 83% was measured as the highest value. In contrast, the others decreased by increasing $Bi_2Te_3$. n-type characteristics was observed at all condition except alloy 6 which $Bi_2Te_3$ ration is 91%. The power factors of all samples were calculated with Seebeck coefficient and resistivity. Also the thermal conductivity was measured by using laser flash analyzer (LFA). In this work, the microstructures and thermal properties have been measured as a function of ratio of $Bi_2Te_3$ in the $Bi_2Te_3$-PbTe system.

The piezoelecric properties of $(K_{0.5}Na_{0.5})(Nb_{0.96}Sb_{0.04})O_3$+$1.2mol%K_4CuNb_8O_{23}$+$xmol%La_2O_3$ lead-free piezoelecric ceramics were investigated as a function x. These ceramics were fabricated by conventional ceramics processing. Piezoelectric constant ($d_{33}$) and piezoelectric charge coefficient ($g_{33}$) of x=0.2 mol% composition exhibited good properties of 160.3pC/N and 37.4($10^{-3}Vm/N$), respectively.

On this paper, piezoelectric transducer was studied through direct piezoelectric effect. Circular unimorph type piezoelectric transducer is fabricated by attaching circular type PZT ceramic to circular plate of brass. The fabricated transducer was simulated and analyzed by using FEM program, ANSYS. Output characteristics were measured by applying diverse frequencies, including resonance frequency, of vibrator to transducer, and then the results were compared with ANSYS results. In addition, each characteristic was measured at two constraint conditions to obtain higher efficiency.

GaN-based light-emitting diodes (LEDs) are attracting great interest as candidates for next-generation solid-state lighting, because of their long lifetime, small size, high efficacy, and low energy consumption. However, for general illumination applications, the external quantum efficiency of LEDs, determined by the internal quantum efficiency (IQE) and the light extraction efficiency, must be further increased. The IQE is determined by crystal quality and epitaxial layer structure and high value of IQE more than 70% for blue LEDs have been already reported. However, there is much room for improvement of light extraction efficiency because most of the generated photons from active layer remain inside LEDs by total internal reflection at the interface of semiconductor with air due to the high refractive index difference between LEDs epilayer (for GaN, n=2.5) and air (n=1). The light confining in LEDs will be reabsorbed by the metal electrode or active layer, reducing the efficacy of LEDs. Here, we present the first demonstration of enhanced light extraction by forming a MgO nano-pyramids structure on the surface of vertical-LEDs. The MgO nano-pyramids structure was successfully fabricated at room temperature using conventional electron-beam evaporation without any additional process. The nano-sized pyramids of MgO are formed on the surface during growth due to anisotropic characteristics between (111) and (200) plane of MgO. The ZnO layer with quarter-wavelength in thickness is inserted between GaN and MgO layers to increase the critical angle for total internal reflection, because the refractive index of ZnO (n=1.94) could be matched between GaN (n=2.5) and MgO (n=1.73). The MgO nano-pyramids structure and ZnO refractive-index modulation layer enhanced the light extraction efficiency ofV-LEDs with by 49%, comparing with the V-LEDs with a flat n-GaN surface. The angular-dependent emission intensity shows the enhanced light extraction through the side walls of V-LEDs as well as through the top surface of the n-GaN, because of the increase in critical angle for total internal reflection as well as light scattering at the MgO nano-pyramids surface.

The amorphous $Bi_5Nb_3O_{15}$ film grown at room temperature under an oxygen-plasma sputtering ambient (BNRT-$O_2$ film) has a hydrophobic surface with a surface energy of $35.6\;mJm^{-2}$, which is close to that of the orthorhombic pentacene ($38\;mJm^{-2}$, resulting in the formation of a good pentacene layer without the introduction of an additional polymer layer. This film was very flexible, maintaining a high capacitance of $145\;nFcm^{-2}$ during and after 10s bending cycles with a small curvature radius of 7.5 mm. This film was optically transparent. Furthermore, the flexible, pentacene-based, organic thin-film transistors (OTFTs) fabricated on the polyethersulphone substrate at room temperature using a BNRT-$O_2$ film as a gate insulator exhibited a promising device performance with a high field effect mobility of $0.5\;cm^2V^{-1}s^{-1}$, an on/off current modulation of $10^5$ and a small subthreshold slope of $0.2\;Vdecade^{-1}$ under a low operating voltage of -5 V. This device also maintained a high carrier mobility of $0.45\;cm^2V^{-1}s^{-1}$ during the bending with a small curvature radius of 9 mm. Therefore, the BNRT-$O_2$ film is considered a promising material for the gate insulator of the flexible, pentacene-based OTFT.

수조구조의 InGaN LED 소자에 적용이 가능하며 높은 열적안정성을 갖는 저저항 고반사율 p형 오믹 전극을 개발하였다. Ag에 Mg을 첨가하여 p형 전극을 이용하여 $400^{\circ}C$, 공기중에서 1분간 열처리 후 $2.2\;{\times}\;10^{-5}\;{\Omega}cm^2$의 낮은 접촉 저항을 얻을 수 있었고, 460 nm 파장에서 82.6%의 높은 반사율을 획득할 수 있었다. 이는 Mg가 첨가됨에 따라 Ag가 고온에서 집괴되는 원인인 산소-공공 결합을 줄여줌으로써 높은 열적 안정성을 얻게 되었다. Ag를 열처리 할 경우, 외부에 존재하는 산소가 공공 자리에 들어간 후, 산소와 공공의 강한 인력에 의해 산소가 침입형 자리에 들어가서면서 두개의 공공과 강하게 bonding을 갖는 diffusion center가 많이 존재하게 된다. 하지만 Mg가 첨가되었을 경우, Oxygen affinity가 강한 Mg에 산소가 먼저 결합을 이루면서 산소-공공결합을 줄여주게 되어 높은 온도에서도 diffusion이 이루어지지 않고 높은 열적 안정성을 갖게 된다.

(Ba,Sr)$TiO_3$ (BST) thin film with a perovskite structure has potential for the practical application in various functional devices such as nonvolatile-memory components, capacitor, gate insulator of thin-film transistors, and electro-optic devices for display. Normally, the BST thin films derived from sol-gel and sputtering are amorphous or partially crystalline when processed below $600^{\circ}C$. For the purpose of integrating BST thin film directly into a Si-based read-out integrated circuit (ROIC), it is necessary to process the BST film below $400^{\circ}C$. The microstructural and electrical properties of low-temperature crystallized BST film were studied. The BST thin films have been fabricated at $350^{\circ}C$ by UV-assisted rapidly thermal annealing (RTA). The BST films are in a single perovskite phase and have well-defined electrical properties such as high dielectric constant, low dielectric loss, low leakage current density, and high breakdown voltage. Photoexcitation of the organics contained in the sol-gel-derived films by high-intensity UV irradiation facilitates elimination of the organics and formation of the single-crystalline phase films at low temperatures. The amorphous BST thin film was transformed to a highly (h00)-oriented perovskite structure by high oxygen pressure processing (HOPP) at as low as $350^{\circ}C$. The dielectric properties of BST film were comparable to (or even better than) those of the conventionally processed BST films prepared by sputtering or post-annealing at temperature above $600^{\circ}C$. When external pressure was applied to the well-known contractive BST system during annealing, the nucleation energy barrier was reduced; correspondingly, the crystallization temperature decreased. The UV-assisted RTA and HOPP, as compatible with existing MOS technology, let the BST films be integrated into radio-frequency circuit and mixed-signal integrated circuit below the critical temperature of $400^{\circ}C$.