Both the resonance and ultrasonic techniques are standard methods far characterizing the physical properties of piezoelectric materials. However, we found that each technique can only offer a few reliable measurements while the rest often have errors or impossible to implement because of the sample requirements. This paper show that one can use the combination of both techniques to achieve much better accuracy and be able to get the complete set of elastic, dielectric and piezoelectric coefficients using fewer samples. Using an ultrasonic spectroscopy we have also measure the dispersion of the ultrasonic velocity and the attenuation up to 65 MHz. Pb(Zr,Ti)O$_3$[PZT] ceramics were used as examples fur both studies.

Metal ferroelectric semiconductor Field Effect- Transistors(MFSFET) with various gate electrodes, that are aluminum, platinum and poly -Si, using LiNbO$_3$/Si(100) structures were fabricated and the properties of the FETs have been discussed. The drain current of the state of FET with Pt electrode was more than 3 orders of magnitude larger than the state current at the same gate voltage of 1.5 V, 7.rich means the memory operation of the MFSFET. A write voltage as low as about $\pm$4 V, which is applicable to low power integrated circuits, was used for polarization reversal. The retention properties of the FET using Al electrode were quite good up to about 10$^3$s and using Pt electrode remained almost the same value of its initial value over 2 days at room temperature.

$GaF_3$ films were directly grown on p' and p-type GaAs(100) substrates using a $SF_6$ plasma discharge system. GaAs MIS(Meta1-Insulator-Semiconductor) capacitor was successfully fabricated for about 1 hour at temperature $290^{\circ}C$ using the as-grown $GaF_3$ films. The as-grown films on p'-GaAs exhibited a current density of less than 6.68 $\times$ $1O^{-9}$ A/$cm^2$ at a breakdown field of 500kV/cm and a refractive index of 2.0 ~ 2.3 at a wavelength of 632.8 nm. The dielectric constant was about 5 derived from 1 MHz capacitance-voltage (C-V) measurements. Dielectric dispersion of the fluoridated films on p'-GaAs measured ranged from 100 Hz to 10 MHz was not observed.

In this paper, $Ba_{0.5}$Sr$_{0.5}$TiO$_3$ thin-films were prepared on Pt/Ti/Si0$_2$/Si substrates by RF magnetron sp-uttering method. We investigated electric and dielectric properties of BST thin-films with various ann-ealing temperature using in-sute RTA. Deposition conditions of BST films were set substrate temperat-ure, 30$0^{\circ}C$ and working gas ratio, Ar:O$_2$=90:10. After BST films deposited, we fabricated a capacitor of MIM structure with Al top electrode for measurement. Post-annealing using RTA performed at 40$0^{\circ}C$, $600^{\circ}C$, 80$0^{\circ}C$ for 60 sec, respectively. Also we exacted crystallization and composition of BST thin-films by XRD analysis. In measurement result, this capacitors showed a dielectric constant of about 200 at 1MHz and leakage current density of 5$\times$10$^{-8}$ A/$\textrm{cm}^2$ at 1.5V Microstructure of BST thin-films exhibited effective quality in low-temperature annealed 71ms than high-temperature annealed 71ms.s.s.

For the first time, charge trapping nonvolatile semiconductor memories with the deoxidized oxynitride gate dielectric is proposed and demonstrated. Gate dielectric wit thickness of less than 1 nm have been grown by postnitridation of pregrown thermal silicon oxides in NO ambient and then reoxidation. The nitrogen distribution and chemical state due to NO anneal/reoxidation were investigated by M-SIMS, TOF-SIMS, AES depth profiles. When the NO anneal oxynitride film was reoxidized on the nitride film, the nitrogen at initial oxide interface not only moved toward initial oxide interface, but also diffused through the newly formed tunnel oxide by exchange for oxygen. The results of reoxidized oxynitride(ONO) film analysis exhibits that it is made up of SiO$_2$(blocking oxide)/N-rich SiON interface/Si-rich SiON(nitrogen diffused tunnel oxide)/Si substrate. In addition, the SiON and the S1$_2$NO Phase is distributed mainly near the tunnel oxide, and SiN phase is distributed mainly at tunnel oxide/Si substrate interface.

Among the feffoelectric thin films that have been widely investigated for ferroelectric random access memory (FRAM) applications, SrBi$_2$Ta$_2$$O_{9}$ thin film is appropriate to memory capacitor materials for its excellent fatigue endurance. However, very few studies on etch properties of SBT thin film have been reported although dry etching is an area that demands a great deal of attention in the very large scale integrations. In this study, the a SrBi$_2$Ta$_2$$O_{9}$ thin films were etched by using magnetically enhanced inductively coupled Ar/CHF$_3$ plasma. Etch properties, such as etch rate, selectivity, and etched profile, were measured according to gas mixing ratio of CHF$_3$(Ar$_{7}$+CHF$_3$) and the other process conditions were fixed at RF power of 600 W, dc bias voltage of 150 V, chamber pressure of 10 mTorr. Maximum etch rate of SBT thin films was 1750 A77in, under CHF$_3$(Ar+CHF$_3$) of 0.1. The selectivities of SBT to Pt and PR were 1.35 and 0.94 respectively. The chemical reaction of etched surface were investigated by X-ray photoelectron spectroscopy (XPS) analysis. The Sr and Ta atoms of SBT film react with fluorine and then Sr-F and Ta-F were removed by the physical sputtering of Ar ion. The surface of etched SBT film with CHF$_3$(Ar+CHF$_3$) of 0.1 was analyzed by secondary ion mass spectrometer (SIMS). Scanning electron microscopy (SEM) was used for examination of etched profile of SBT film under CHF$_3$(Ar+CHF$_3$) of 0.1 was about 85˚.85˚.˚.

In order to the investigate for the DC(forward-reverse) breakdown properties of gate oxide in MOSFET, we are manufactured the specimen as following. The resistivity is 1.2($\Omega$ $.$ cm), 1.5($\Omega$ $.$ cm) and 1.8($\Omega$ $.$ cm) when thickness is 600(${\AA}$), and the diffusion time is both 110[min] and 150[min] when thickness is 600[${\AA}$]. In DC dielectric strength due to the each resistivity, it is confirmed that almost of the leakage current and breakdown current is flowed through n+ source when positive bias is applied, but is flowed through P region when negative bias is applied. It is thought that the dielectric strength due to the diffusion time is the contribution as increasing of p region.

In this paper, the relativities, and the properties of various contaminants, which could give significant decrease in electrical insulation strength were investigated. For this investigation, the contamination degree was manually measured with brush-wiping method, and the ingredient of some specific sample was analyzed with ICP/MS. With the result, the influence of distance from sea, climatic condition contamination was investigated. And the difference in electrical properties of various salts in aquous solution was determined. Finally, we could get several significant result on the relativity and properties of contamination in various conditions

Crosslinked polyethylene/silane crosslinked polyethylene (XLPE/SXLPE) blends were prepared by a twin screw extruder and their water tree growing and electrical breakdown characteristics of XLPE were improved by the addition of SXLPE, when samples were crosslinked only by the thermorolysis of DCP (dicumyl perosxide). However, steam curing process was not good for water tree characteristics. It was also found that the rate of water tree growing of XLPE/SXLPE blend increased when the content of SXLPE was 50 %. AC breadown strength slightly increased by the addition of SXLPE to XLPE when samples were crosslinked only by the thermorolysis of DCP.

Inception and propagation of electrical tree and properties of Partial discharge(PD) pulses accompanying with tree as a function of needle tip radius in low density polyethylene were discussed. To study on these characteristics in different tip radius, we used specimens with needle-plane electrode system made of LDPE, observed inception and propagation of electrical tree by optical microscope with computer and investigated the characteristics of the phase resolved PD pulses accompanying with propagation of electrical tree. The PD quantities detected and analysed were PD magnitude, mean phase angle, average discharge, and the statistical characteristics of the PD pulses. As the tip radius ${\gamma}$ increases, tree inception stress E$\sub$i/ converges to constance value. This result suggests that tree inception stress E$\sub$i/ increases due to stress relaxation when the tip radius is small. Branch-type electrical tree was formed When E$\sub$i/ is 640-750[kV/mm]. bush-type electrical tree when E$\sub$i/ is 370∼400[kV/mm], branch-like electrical tree when E$\sub$i/ is 370-400[kV/mm].

The effects of UV and ozone on the weathershed materials for 5 polymer insulators were investigated. This study was carried by material characterizations such as surface microstructure, thermal property, chemical structure and contact angle. The aged specimens are compared with new ones. In case of UV, the chalking of fillers and cracking of surface were increased with the increase of UV radiation time. In case of ozone, aged specimens are not different from new ones. From this study, It can be concluded that UV has more effect on the surface properties of weathershed materials than ozone.

A Well oriented Bi$_2$re$_2$CaCu$_2$O$\sub$8/(Bi2212) superconductor thick films were formed successfully on a copper substrate by liquid reaction between a Cu-free precursor and Cu tape using method in which Cu-free BSCO powder mixture was printed on copper plate and heat-treated. And we examined the mechanism for the rapid formation of Bi2212 superconducting films from observing the surface microstructure with heat-treatment time. At heat-treatment temperature, the printing layer partially melt by reacting with CuO of the oxidizing copper plate, and the nonsuperconducting phases present in the melt are typically Bi-free phases and Cu-free phases. Following the partial melting, the Bi$_2$Sr$_2$CaCu$_2$O$\sub$8/ superconducting phase is formed at Bi-free phase/liquid interface by nucleation and grows. It was confirmed that the phase colony from the phase diagram of Bi$_2$O$_3$-(SrO+CaO)/2-CuO system is similar to the observed result.

In this thesis, we fabricate a zero-magnetostrictive amorphous ribbon measure the impeadance effect, and then Investigate possibility as a sensor material. $Co_{72.5}$F $e_{0.5}$M $o_{2}$ $B_{15}$ S $i_{5}$ is used as composition of specimen alloy. We first melt the specimen in high frequency induction furnace and then rapidly quench it by using single roll technique. As the result, we obtain a ribbon where thickness is 12${\mu}{\textrm}{m}$, width is 1mm and length is 93mm. Consequently, it is proved through this study that zero-magnetostrictive amorphous ribbon can be used as an excellent magnetic sensor material.rial.l.

Bi$_2$Sr$_2$CuO$\sub$x/ thin films have been fabricated by atomic layer-by-layer deposition using ion beam sputtering(IBS) method. XRD and RHEED investigations reveal that a buffer layer with compositions different from Bi-2201 is formed at the early deposition stage of less than 10 units cell and then Bi-2201 oriented along the c-axis is grown.

For the research of the effects on suspension solution with YBCO and BSCCO for elcectrophoretic deposition to prepare superconducting thick-film wire, it was investigated that the preheating technique for the superconducting powders in vacuum system was used with various solvent solutions of acetone, ethanol, toluene and buthanol for electrophoresis. As a result it was useful to remove the influence of remaining and adsorbed solvent solution which was existed between and on the particle surfaces when the specimens of superconducting wire by electrophoresis were treated in vacuum of 10$\^$-3/ Torr and temperature around 200$^{\circ}C$ in bell-jar system. From the prepared superconducting wire samples, the critical current density, Jc was measured by 4-point prove method in liquid N$_2$ at the value of 10$\^$3/ to 10$\^$4/ A/$\textrm{cm}^2$, respectively, for the YBCO and BSCCO superconducting wires.

We fabricated resistive superconducting fault current lmiters based on YBa$_2$Cu$_3$O$_{7}$ thin films and investigated their quench propagation characteristics. The YBa$_2$Cu$_3$O$_{7}$ film was coated with a gold layer and patterned into 1 mm wide meander lines by photolithography. The limiters were tested with simulated fault currents of various fault angles and amplitudes. The quench propagation characteristics were explained based on the heat transfer within the film as well as between the film and the surrounding liquid nitrogen. The quench completion time strongly depended on the potential fault current. It was 1 msec at the peak fault current of 76 A/peak/ and corresponding quench propagation speed was 43 m/sec (film cross section: 4 x 10$^{-6}$ $\textrm{cm}^2$).

NCZF ferrites doped with B-Bi-Zn(35-25-40) glass ceramics were prepared to investigate the magnetic properties. The XRD peaks of all of samples were observed only spinel phase. As the additive increased at sintering temperature 750$^{\circ}C$ and 850$^{\circ}C$ for 3 hours, the density and shrinkage increased until 5.28g/㎤ and 20%, respectively. According to SEM images, the growth of grain progressed rapidly at sintering temperature 850$^{\circ}C$ for 3 hours. Increasing the additive, initial permeability and complex permeability decreased. The complex permeabilities as a function of frequency showed high values at a12, a16, b11 and b16 sarmples.

ZnO thin films on (001) sapphire substrates have been deposited by pulsed laser deposition technique using a Nd:YAG laser with the wavelength of 355 nm. In order to investigate the effect of the deposition conditions on the properties of ZnO thin films at an oxygen pressure of 350 mTorr, the experiment has been Performed at various substrate temperatures in the range of 20$0^{\circ}C$ to $700^{\circ}C$. According to XRD, (002) textured ZnO films of high crystalline quality have been obtained and the intensity of UV emission was the highest at 40$0^{\circ}C$ substrate temperature.

In recent years, attempts have been made to greatly improve the display quality of active-matrix liquid crystal display devices, and many techniques have been proposed to solve such problems as gate signal delay, feed-through voltage and image sticking. To improve these problems which are caused by the fried-through voltage, we have evaluated new driving methods to reduce the fled-through voltage. Two level gate-pulse was used for the gate driving of the cst-on-common structure pixels. And two-gate line driving methods with the optimized gate signals were applied for the cst-on-gate structure pixels. These gate driving methods were better feed-through characteristics than conventional simple gate pulse. The evaluation of the suggested driving methods were performed by using a TFT-LCD array simulator PDAST which can simulate the gate, data and pixel voltages of a certain pixel at any time and at any location on a TFT array. The effect of the new driving method was effectively analyzed.

Organic electroluminescent devices (OELDs) have received a great deal of attention due to their potential application as full-color displays. Europium complexes are known as excellent red light-emitting materials for OELDs since they show intense photoluminescence at around 612 nm with a narrow spectral bandwidth. In this study, a novel curopium complex, Eu(TTA)$_3$(TPPO) was synthcsizcd and its photoluminescent and electroluminescent characteristics were investigated with a device structure of ITO/TPD/Eu(TTA)3(TPPO)/A1q$_{3}$ Al, where sharp emission at the wavelength of 615 nm has been observed. Details on the electrical properties of these structures will be also discussed.

The ultrasonic spray method was employed to make (Y,Gd)BO$_3$:Eu Phosphor, and its optical properties under 147nm VUV and 254 nm UV excitations were characterized and then compared with that produced by the solid-state reaction. The mixed solution of acetate hydrates of Y, Gd, Eu and boric acid diluted in water or methanol was used as the precursor fur the spray. It was found that (Y,Gd)BO$_3$:Eu phosphor made by this ultrasonic spray had a spherical shape and fine particle size of 1${\mu}{\textrm}{m}$. The crystalline structure for the as-sprayed phosphor was amorphous, but it converted into the same polycrystalline phase of solid state reaction after post heat treatment at 110$0^{\circ}C$ for 2hr. The emitting intensity under VUV and UV excitations for the spray-formed (Y,Gd)BO$_3$:Eu phosphor, however, was inferior to the later one. The excitation spectra were also studied and compared under VUV and UV excitations to explain the change of emitting intensity with Gd substitution in (Y$_{1-x}$ Gd$_{x}$)BO$_3$:Eu Phosphors made by spray and solid state reaction.on.

Electroluminescence(EL) devices based on organic thin films have been attracted lots of interests in large-area light-emitting display. In this stuffy, an emissive layer was fabricated using Langmuir-Blodgett(LB) technique in organic light-emitting (OLEDs). This emissive organic material was synthesized and named PECCP[poly(3.6-N-2-ethylhexyl carbazolyl cyanoterephthalidene)] which has a strong electron donor group and an electron acceptor group in main chain repeated unit. This material has good solubility in common organic solvents such as chloroform. THF, etc, and has a good stability in air. The Langmuir-Blodgett(LB) technique has the advantage of precise control of the thickness down to the molecular scale, In particular, by varying the film thickness it is possible to investigate the metal/polymer interface. Optimum conditions for the LB film deposition are usually determined by investigating a relationship between a surface pressure $\pi$ and an effective are A occupied by one molecule on the subphase. The LB films were deposited on an indium-tin-oxide(ITO) glass at a surface pressure of 10 mN/m and dipping speed of 12 mm/min after spreading PECCP solution on distilled water surphase at room temperature, Cell structure was ITO/PECCP LB film/Alq$_3$/Al. We considered PECCP as a hole -transport layer inserted between the emissive layer and ITO. We also used Alq$_3$ as an emissive layer and an electron transport layer. We measured current-voltage(I-V) characteristics, UV/visible absorption, PL spectrum and EL spectrum of the OLEDs.

The relationship between the DC degradation characteristics of the ZnO varistor and the ambient sintering-process is investigated in this study. ZnO varistors made of Matsuoka's composition were fabricated by standard ceramic techniques. The ambient sintering-process is performed at the extraordinary electrical-furnace which is equipped with the vacuum system. The Gas of sintering process was oxygen, nitrogen, argon, air respectively. The microstructure of ZnO varistors be made use of SEM equipment. The condition of DC degradation tests were conducted at $115\pm2^{\circ}C$ for periods up to 13 h. Current-voltage analysis is used to determine nonlinear coefficients($\alpha$). Resistance-frequency and capacitance-frequency analysis are accomplished to the understanding of electrical properties as DC degradation test. From above analysis, it is found that the ZnO varistor sintered in oxygen atmosphere showed superior properties at the DC degradation test.

The (Ba,Sr)TiO$_3$[BST] thin film were fabricated on the Pt/Ti/SiO$_2$/Si substrate by RF sputtering technique. The structural properties of the BST thin films were investigated with deposition time and substrate temperature by XRD. In the case of the BST thin films which has the deposition thin of 20 min, second phases and BST (111) peaks were increased with increasing the temperature of substrate. The capacitance of the BST thin film (deposition time of 20 min.) was decreased with the substrate temperature and was 1500pF with applied voltage of 1V.

(Ba$_{0.6}$Sr$_{0.4}$)TiO$_3$(BST) thin films were fabricated with different deposition temperature by Pulsed Laser Deposition(PLD). This BST thin films showed a maximum dielectric constant value of $\varepsilon$$_{r}$=~684 and dielectric loss was ~0.01 when substrate temperature was 75$0^{\circ}C$. Charge storage density of BST thin film was 4.733 [$\mu$C/$\textrm{cm}^2$] and estimated charging time was 0.15 nsec. Leakage current density of BST thin film was below 10$^{-7}$ [A/$\textrm{cm}^2$] at 3V. 3V.V.

Driving generator of USMs(ultrasonic motors) with low noise, high efficiency was designed and fabricated. It was focused on merits such as size-reduction, thermal resistance, To control revolution speed, input frequency was varied. Output of generator had frequency range of 39.1 ∼ 43.5 MHz and voltage of 120 V. USM with resonant frequency 40.3 kHz exhibited a maximum torque of 2.5 kg $.$ cm and a maximum revolution speed of about 130 rpm.

Recently, the ceramics of high permittivity are applied to DRAM and FRAM. In this study, (B $a_{x}$ S $r_{l-x}$)Ti $O_3$(BST) ceramics thin films were prepared by Sol-Gel method. BST solution was made and spin-coated on Pt/ $SiO_2$/Si substrate at 4000 [rpm] for 10 seconds. Coated specimens were dried at 150[$^{\circ}C$] for 5 minutes. Coating process was repeated 3 times and then sintered at 750[$^{\circ}C$] for 30 minutes. Each specimen was analyzed structure and electrical characteristics. Thickness of BST ceramics thin films are about 2000($\AA$). Dielectric constant and loss of thin films was little decreased at 1[KHz] ~1[KHz]. Dielectric constant and loss to frequency were 250 and 0.02 in $Ba_{0.7}$S $r_{0.3}$Ti $O_3$. The properly of leakage current as the realation between the current and the voltage was that change of the leakage current was stable when the applied voltage was 0~3[V].

The post-annealing treatments on RF (Radio Frequency) magnetron sputtered PZI(Pb$\_$1.05/(Zr$\_$0.52/, Ti$\_$0.48/)O$_3$thin films(4000${\AA}$) have been investigated. for a structure of PZT/Pt/Ti/SiO$_2$/Si Crystallization pproperties of PZT films were strongly dependent on RTA(Rapid Thermal Annealing) annealing temperature. We were able to obtain a perovskite structure of PZT at a low temperature of 600$^{\circ}C$. P-E curves of Pd/PZT/Pt capacitor annealed at 700$^{\circ}C$ demonstrate typical hysteresis loops. The measured values of P$\_$r/, E$\_$c/, by post annealed at 700$^{\circ}C$ were 12.1 ${\mu}$C/$\textrm{cm}^2$, 120KV/cm respectively.

In this study, Ultra-thin films of (N-ducosyl quinolinium)-TCNQ(1:2) complex were prepared on the hydrophilic substrate by Langmuir-Blodgett(LB) technique. By measure of UV-vis spectra and capacitance, deposition status was confirmed together with the thickness of natural oxidized aluminum film inside a device and dielectric constant of (N-docosyl quinolinium)-TCNQ(1:2) complex. The electrical properties of (N-docosyl 7uin7linium)-TCNQ(1:2) complex were investigated at room temperature. The conductivity of this film measured by the direction uf either vertical or horizontal axis is results in a quite different value.

In the case of immobilizing of glucose oxidase in organic polymer using electrosynthesis, the glucose oxidase obstructs charge transfer and mass transport during the film growth. This may lead to short chained polymer and/or make charge-coupling weak between the glucose oxidase and the backbone of the polymer. That is mainly due to insulating property and net chain of the glucose oxidase. Since being the case, it is useless to increase in amount of glucose oxidase more than reasonable in the synthetic solution. We establish qualitatively that amount of immobilization can be improved by adding a little ethanol in the synthetic solution. As ethanol was added by 0.1 rnol dm" in the synthetic solution, Michaelis-Menten constants of the resulting enzyme electrode decreased from 30.7 mmol $dm^{-3}$ to about 2 mmol $dm^{-3}$. That suggests increase in affinity of the enzyme electrode for glucose and in amount of the immobilized enzyme.zyme.

ZnO thin films on glass substrate were deposited by RF magnetron reactive sputter with various argodoxygen gas ratios and substrate temperatures. Crystallinities, surface morphologies, chemical compositions, and electrical properties of the films were investigated by XRD, SEM, XPS and electrometer(keith1ey 617). All films showed a strong prefered orientation along the c-axis on glass substrate, and the chemical stoichiometry was obtained at Ar/$O_2$=50/50. The propagation velocity of ZnO SAW filter was about 2, 590 dsec and insertion loss was a minimum value of about -21dB.

Because the traditional filters have many demerits, multi-step electric oil filter have manufactured the efficiency of insulating oil to improve. Therefore, the function of oil filter to improve based on my experience and know-how about my job. Through this study have obtained many merits. The efficiency of insulating oil is improved. The waste oil reused in repair works of the damaged transformer. Multi-step filter is shortening the working time and safety. it is handy for use and movement. This study lengthen the expected life span of filter. The improvement of oil filter bring about elevation of productivity.

All solid state thin film micro-batteries consisting of lithium metal anode, an amorphous LiPON electrolyte and cathode of vanadium oxide have been fabricated and characterized, which were fabricated with cell structure of Li/LiPON/V$_2$O$\sub$5/Pt. The vanadium oxide thin films were formed by d.c. reactive sputtering on Pt current collector. After deposition of vanadium oxide films, in-situ growths of lithium phosphorus oxynitride film were conducted by r.f. sputtering of Li$_3$PO$_4$ target in mixture gas of N$_2$ and O$_2$. The pure metal lithium film was deposited by thermal evaporation on thin film LiPON electrolyte. The cell capacity was about 45${\mu}$Ah/$\textrm{cm}^2$ $\mu\textrm{m}$ after 200 cycle. No appreciable degradation of the cell capacity could be observed after 50 cycles .

The electron transport coefficients in mixture gas includes SF/sub 6/ is analysed in range of E/N values from 60∼800(Td) by the Boltzmann method that using a set of electron collision crass sections determined by the researchers. Swarm parameters in the Boltzmann method simulation such as electron drift velocity, ionization and electron attachment coefficients is in nearly agreement with the respective experimental and theoretical for a range of E/N.

In this experimental study we Proposed the double dielectric barrier discharge (DDBD) reactor to produce as high an electric field as possible. The experiment are conducted for applied voltage from 15 to 20[tV], flow gas rage at 2[1/min] and pulse rate at 120[pulses/s] and 240[pulses/s]. SPD connection of DDBD which combine the surface discharge with the silence discharge was most effective to reduce the NOx. In the decomposition efficiency per watt, the low pulse rate gave hotter efficiency than that of the high pulse rate. However in DeNOx rate, the high pulse rate gave better performance than that of the low pulse rate. NOx removal rate increased with increasing the applied voltage in all reactors.

Continuing improvement of microprocessor performance involves in the devece size. This allow greater device speed, an increase in device packing density, and an increase in the number of functions that can reside on a single chip. However this has led to propagation delay, crosstalk noise, and power dissipation due to resistance-capacitance(RC) coupling become significant due to increased wiring capacitance, especially interline capacitance between the metal lines on the same metal level. Becase of pattering MSSQ (Methylsilsequioxane), we use RIE(Reactive ton Etching) which is a good anisotrgpy. In this study, according as we control a flow rate of CF$_4$/O$_2$ gas, RF power, we analysis by using ${\alpha}$ -step, SEM and AFM,

In this paper, we studied Surface Discharge Type Flat Fluorescent Lamp(FFL) with High Luminance for LCD Backlighting. This lamp is Surface Discharge Type structure with a pair of Sodalime glass, insulator layer, phosphor layer, and Xe gas gap. There are two influences of Electric field on different dielectric thickness. The Electric field difference at the dielectric layer itself enhances minimum value of firing voltage and luminance uniformity. So, we measured the Electric filed at 0.5mm, 1mm gap length and discharge voltage for difference dielectric layer thickness. In experiment result, the thicker dielectric layer has higher firing voltage and lower current.

A 900 71Hz RF band-pass amplifier for wireless communication systems is designed and fabricated. HSPICE simulation results show that the amplifier can achieve a tunable center frequency between 880 MHz and 920 MHz. The gain of designed amplifier is 19 dB at Q=88, and the power dissipation is about 61 mW under 3 V power supply by using the spiral inductor with negative-7m circuit and center frequency tunning circuit. The designed band-pass amplifier is implemented by using 0.6 um 2-poly-3-metal standard CMOS process.

To reduce the maintenance expence, and the possibility of electric outage and accident, accurate measurement should be carried. But the classical method has some problems in the aspect of man power, reliability, and expence. In this paper, we propose a new type apparatus, which could detect the degree of contamination on insulators on outdoor insulation system, such as transmission and distribution line insulator and bushing. The new type apparatus consists of Pelltier module, electrode system, and measuring part. At first leakage current detecting method was considered, then with the fault(oxidation of electrode) of that method we should propose a another method. We carried various test to prove the possiblity and reliability of the propoused apparatus. And we get some useful result with laboratory test.

Recently, with the rapid development and demand for compactness of portable communications, the requirement for compact and low-cost filter is increasing. One of the methods for reducing size and cost is to use high dielectric constant and low loss dielectric material in filter. The other is new monoblock dielectric band-pass filter (BPF) which has holes in a single dielectric body without additional coupling elements. This structure effectively reduces the size and cost of the filters. For previous conventional coaxial type dielectric BPF, dielectric substrates were used for coupling between adjacent resonators and additional input and output ports were needed. Coupling between adjacent resonators of monoblock BPF can be otained via electrode pairs. Capacitances of electrode pair structure for coupling are intensively investigated by 3-D FEM. The BPF for PCS has been designed to have a 30 MHz pass-bandwidth with center frequency of 1855 MHz and an attenuation pole at below the passband using a commercial 3-D structure simulator.

A technique is investigated for achieving broadband properties by controlling the operation frequency of microstrip antennas. The control is achieved by applying DC bias to the microstrip antenna. Air gap antenna with PZT post is fabricated. by using in C-band. In the case of Air gap antenna, the variation of center frequency was about 16Mhz and the bandwidth was increased up to 123.3% at 15dB, 160.7% at 20dB than before applying DC bias respectively. The change property of frequency in air gap antenna is nearly the same the C-V property in PZT.

The paper deals with the surface discharge characteristics for porcelain suspension insulators. The micro-crystals were crystallized on the surface of glace coated on the porcelain These micro-crystals may affect the electrical Properties such as flashover voltage. However. not much research have been conducted. In this study. we correlated the surface discharge characteristics to the microstructures. It was confirmed that the micro-crystals on the glaze initiated the flashover when the surface was wetted and/or contaminated.

We have studied properties(crystal structure, density, absorption, contraction, initial permeability, and permeability) of Ba$\sub$0.2/Me$\sub$0.31/Fe$\sub$0.49/(Me:Ni$\sub$1-x/, Cu$\sub$x/ x=0~1) ferrites with various Me site, because of development of magnetic materials for inductor. As a results of the density, absorption rate, and shrinkage rate, the sintering temperature of Ba$\sub$0.2/ Me$\sub$0.31/ FEesub 0.49/(Me:Ni$\sub$1-x/ x=0.25, 0.75) had got over 1100$^{\circ}C$ for 3 hours. According to SEM images, the configurations of grain were hexagonal, Increasing the sintering temperature, initial Permeability increased. The complex permeabilities as a function of for several MHz showed constants.

We studied the operating properties of resistive and inductive SFCLS with 100 $\Omega$ of quench impedance for a three-phase-fault in the 154 kV transmission system. The fault simulation at the phase angles 0$^{\circ}$ , 45$^{\circ}$ , and 90$^{\circ}$ showed that the resistive SFCL limited the fault current less than 16 kA without any DC component after one half cycle from the instant of the fault. On the other hand, the inductive SFCL suppressed the current below 11 kA, but with 3-4 kA of DC component which decreased to zero in 5 cycles. We concluded that the inductive SFCL had higher performance in current limiting but the resistive SFCL was better from the view point of DC components.

BSCCO thin films are fabricated via a co-deposition process by an ion beam sputtering with an ultra-low growth rate, and sticking coefficients of the respective elements are evaluated. The sticking coefficient of Bi element exhibits a characteristics temperature dependence : almost a constant value of 0.49 below 730$^{\circ}C$ and decreases linearly with temperature over 730$^{\circ}C$. This temperature dependence can be elucidated from the evaporation and sublimation rates of bismuth oxide, Bi$_2$O$_3$ from the film surface. It is considered that the liquid phase of the bismuth oxide plays an important role in the Bi(2212) phase formation in the co-deposition process.

We investigated the effects of doping elements on the Bi-Sr-Ca-Cu-0 ceramics. The doping elements can be classified into groups depending on their supeconducting characteristics in the Bi -Sr-Ca-Cu -O structure. The first group of doping elements(Co, Fe, Ni and Zn) substitute into the copper site and can reduce the critical temperatures of the 2223 and 2212 phases. The second group of doping elements(Y and La) substitute into the Ca site and cause the disappearance of the 2223 phase and increase the critical temperatures in the 2212 phase.

In this work, samples were manufactured variously by changing conventional calcining and sintering conditions and we tried the utilization by making the heat treatment time, which is demanded to high-Tc phase formation, much shorter. We found out optimal heat treatment conditions with the analysis on formation process at superconducting phase in term of the change of calcining and sintering time and then, examined X-ray diffraction(XRD) patterns, scanning electron microscope(SEM) measurement and energy dispersive X-ray spectrometer(EDX) of the samples manufactured under heat treatment conditions which we suggest here. As a result, 2223 high-$T_c$, phase of (Bi,Pb)SrCaCuO superconductor starting with ($Bi_l$ xPbx,)$_2$$Sr_2$$Ca_2$$Cu_3$$O_y$, composition was formed from 1 hr sintering sample at temperature nearby melting point and also the completed sample with calcining and sintering time of 9 hr was formed high-$T_c$.low-$T_c$ phase appearing in sight above the critical temperature of liquid $N_2$.

Ferroelectric Pb(Zr$\sub$0.52/Ti$\sub$0.48/)O$_3$ thin films were fabricated by pulsed laser deposition, mainly varying process conditions such as substrate temperature, oxygen pressure, and laser energy, PZT films annealed at more than 600$^{\circ}C$ were crystallized into pure perovskite phases regardless of deposition temperatures. Lower deposition temperature of 400$^{\circ}C$ accompanied with post-annealing at 650$^{\circ}C$ resulted in denser microstructures with extremely small grains compated to those of thin films annealed at higher deposition temperatures. Hysteresis curves of thin film with small grains exhibitied good squareness and low leakage characteristics.

The preparation and electrical properties of LIPON electrolyte were investigated in order to fabricate all solid state thin film battery. The LIPON thin film was deposited by r.f. sputtering of Li$_3$PO$_4$ target in O$_2$-N$_2$ mixtures. The LIPON deposited at N$_2$+10% O$_2$ ratio had a conductivity at 25 $^{\circ}C$ of 1.8${\times}$10$\^$-6/S/cm. The ion conductivity of the LIPON films decreased as the O$_2$ content of the process gas increased.

In this paper, We described the effect of $MoO_3$ Addition and firing temperature on the microwave dielectric properties of $BiNb0_4$ ceramics. The specimens prepared by conventional mixed method was addicted by 0 - 0.03 wt% $MoO_3$ and fired at 860 - $950^{\circ}$ for 3hr. Density increased when $MoO_3$ is below O.Olwt% but decreased when over O.Olwt%. $BiNb0_4$ ceramics addicted with CuO 0.03wt % and $MoO_3$ 0.01 wt% showed microwave dielectric properties, Dielectric constant 37.5, Quality factor[Qx$f_0$]5500, Temperature coefficient of resonance frequency 15ppm/$^{\circ}$

This paper is the study for electrical characteristic of PZT ceramics with Sb$_2$O$_3$, CoO additive. Effect of Sb$_2$O$_3$, CoO additive ranged from 0.0 wt% to 1.2wt% on the electrical characteristic of the PZT ceramics have been investigated. In the case of Sb$_2$O$_3$ 0.6wt%, the maximum vague of mechanical quality factor(Qm) was obtained 124.11 at l15$0^{\circ}C$. And, additive CoO 1.2wt% was obtained 184.12 at l15$0^{\circ}C$. The electromechanical coupling factor(kp) was increased by increasing the amount of Sb$_2$O$_3$, CoO additive. The maximum value of electromechanical coupling factor(kp) was obtained 58.35 with Sb$_2$O$_3$1.2wt% additive at l15$0^{\circ}C$. Dopped with additive CoO 0.9wt%, electromechanical coupling factor(kp) was obtained 47.84 at 115$0^{\circ}C$.

(Sr$\sub$0.85/Ca$\sub$0.15/)TiO$_3$thin films were deposited on Pt-coated TiO$_2$/SiO$_2$/Si wafer by the rf sputtering method. Experiments were conducted to investigate the electrical properties of SCT thin films with various top electrode. C-F and C-V measurements show that SCT thin films annnealed at 600$^{\circ}C$ have a larger capacitance than SCT thin films deposited at 400$^{\circ}C$ , and there is nearly no difference between top electrodes. I-V measurement show that Pt top electrode have a good leakage current density of < 10nA/$\textrm{cm}^2$,. making them suitable for DRAM application.

The(Sr$\sub$0.85/Ca$\sub$0.15/) TiO$_3$(SCT) thin films are deposited on Pt-coated electrode(Pt/TiN/SiO$_2$/Si) using RF sputtering method. The composition of SCT thin films deposited on Si substrate at room temperature is close to stoichiometry(1.102 in A/B ratio). Also, SCT thin films deposited on Pt-coated electrodes have the cubic perovskite structure and polycrystalline state. The maximum dielectric constant of SCT thin films is obtained by annealing at 600[$^{\circ}C$].The dielectric constant changes almost linearly in temperature ranges of -80~+90[$^{\circ}C$].

The microwave dielectric properties of The Dielectric Properties of $Ba_{1-x}$A$_{x}$(Mg$_{1}$3/Nb$_{2}$3/)O$_3$ (A = Sr, Ca, x = 0, 0.2 ,0.4 ,0.6, 0.8, 1.0) were investigated. In composition of $Ba_{1-x}$A$_{x}$(Mg$_{1}$3/Nb$_{2}$3/)O, densities are decreased with increasing x values. Grain sizes are decreased with Sr content and Increased with Ca content. The hexagonally ordered superstructure was observed in $Ba_{1-x}$Sr$_{x}$(Mg$_{1}$3/Nb$_{2}$3/)O$_3$(BSMN) systems, the intensity of superlattice increased with x value. In $Ba_{1-x}$Cr$_{x}$(Mg$_{1}$3/Nb$_{2}$3/)O$_3$(BSMN) systems, the additional diffraction patterns were shown. The highest value of $\varepsilon$$_{r}$ was shown in x=0.2 of BCMN systems and the value was 41.9. The highest Q$\times$f was shown in x=0.2 of BSMN systems and the value was 68,000. $\tau$$_{f}$ were shown 0 ppm/$^{\circ}C$ near x=0.8.TEX> near x=0.8.0.8.

The effect of calcination temperature(1st and 2nd calcining at 110$0^{\circ}C$ , 120$0^{\circ}C$ and 130$0^{\circ}C$ respectively) on physical properties of BMNT Ceramics ware investigated. The optimum 1st and 2nd calcination temperature were 120$0^{\circ}C$ , and sintering temperature was 155$0^{\circ}C$. In this condition, the sintering density was 7.53 [g/㎤] and the dielectric constant, Q.f$_{0}$ and $\tau$$_{r}$ were 26, 80, 300[GHz] and +1.5[ppm/$^{\circ}C$] respectively in the microwave range.e.e.

The purpose of this study is to develop the material for multiayer piezoelectric ceramic transformer because multiayer piezoelectric transformer must need low sintering temperature. So that PMN-PSN-PZT family ceramics were added with glass brit(SiO$_2$ $.$ PbO). The dielectric and piezoelectric properties were increased with increasing it until the amounts of additive 0.8wt%. Sintering temperature were low about 100[$^{\circ}C$]. Accordingly, This material could be used to multiayer piezoelectric transformer .

In this paper, the structural, dielectrial and piezoelectrical properties of 0.03Pb(Sb$\sub$1/2/Ti$\sub$0.495/)O$_3$+Xwt% MnO(x= 0, 0.3, 0.4, 0.5, 0.7) system ceramics were investigated as a function of the addition of MnO. As a result, the samples of 0.3wt% MnO content showed the highest mechanical quality factor(Qm) of 1487, and its dielectric constant and electro mechanical coupling factor(Kp) 1357, 54.3%, respectively. Therefore, the dielectrial and piezoelectrical properties of the composition ceramics were indicated as the materials suitable for piezoelectric transformer.

In this study, we investigated the electromagnetic Properties of M $n_{Y}$Z $n_{1-x}$ F $e_{x}$ $O_4$(X=0.67~0.69, Y=0.13~0.19) doped with and without H $o_2$ $O_3$(each of 0.05~ 0.2wt%, step 0.05wt%). The greatest initial permeability of composition is M $n_{0.17}$Z $n_{0.16}$F $e_{0.67}$ $O_4$. As X and Y components, increased. generally resistivity slightly change by the various X and Y components. The initial permeability of M $n_{0.17}$Z $n_{0.16}$F $e_{0.67}$ $O_4$ doped with H $o_2$ $O_3$ showed the about 2.5 times higher than that of M $n_{0.17}$Z $n_{0.16}$F $e_{0.67}$ $O_4$ doped without H $o_2$ $O_3$EX>EX>EX>X>>EX>EX>EX>X>

In this study, electrical properties and TCFr of Pb(Sb$_{1}$2/Nb$_{1}$2/)O$_3$-Pb(Mn $_{1}$3/Nb$_{2}$3/)O$_3$-Pb(zr, Ti)O$_3$ composition ceramics were investigated wish the Zr/Ti ratio and the additions of Y2O3. and Fe$_2$O$_3$ Electromechanical coupling factor(Kp) showed the highest value of 0.555 in the Zr/Ti=0.50/0.50 ratio ,however, dielectric constant showed the highest value of 1,217 in the Zr/Ti = 0.49/0.51 ratio. Excellent TCFr vague of 421ppm/$^{\circ}C$] at-30~9O$^{\circ}C$ was appeared in the Zr/Ti=0.50/0.50 ratio and electro-mechanical coupling factor(Kp) , mechanical quility factor(Qm) and dielectric constant was 0.496, 1,286 and 1,085 ,respectively ,in the composition ceramics of lwt%Y$_2$O$_3$ and 0.3wt%Fe$_2$O$_3$.

A cold cathode flourescent lamp for the backlight in the notebook computer requires high input voltage about 1300(V) when it turns on. But once a discharge starts, the input voltage can be dropped by about one-third for continued output. The equivalent impedance also varies from open to several dozens of kilo-ohms. The piezoelectric transformer converts electrical energy into mechanical energy and then converts it back to electrical energy at a high voltage. Its high output voltage, high efficiency and small size are suitable for driving the LCD backlight in the notebook computer. The piezoelectric transformer operates near the resonance frequency and the output waveform is close to sine wave with very little noise. This paper suggests an inverter for LCD backlight of notebook computer using piezoelectric transformer that includes voltage to frequency converter for gate signal which is useful for tracking of variable resonance frequency depending on load impedance.

PLZT thin films on Pt/Ti/SiO$_2$/Si substrate were fabricated with different Thickness by pulsed laser deposition. 14/50/50 PLZT thin film showed a maximum dielectric constant value of $\varepsilon$$_{t}$=985 at 5000$\AA$, and $\varepsilon$$_{t}$=668 at 2000A. P-EI hysteresis loop of 14/50/50 PLZT thin film was slim ferroelectric. Leakage current density of 14/50/70 PLZT thin film was 10$^{-8}$ A/$\textrm{cm}^2$ at 2000$\AA$.EX>.

The (1-x)MgTiO$_3$-xSrTiO$_3$(x=0,0.1) ceramics were prepared by the conventional mixed oxide method. The structural properties were investigated with sintering temperature and composition ratio by XRD, SEM and DT-TGA. Increasing the sintering temperature from 130$0^{\circ}C$ to 1$600^{\circ}C$, second phase was decreased and grain size was increased. In the case of 0.9 MgTiO$_3$-0.1SrTiO$_3$ ceramics sintered at 130$0^{\circ}C$, dielectric constant, quality factor and temperature coefficient of resonant frequency were 22.61, 10,928(at 1GHz), +50.26ppm/$^{\circ}C$ , respectively.

In order to detect the partial discharge with the metallic particle in GIS, AE sensor was designed and simulated by ANSYS, and manufactured as the coupled vibration mode. The resonant frequency of three Coupled AE sensors were as follows ; 147.88 kHz in 8.1 mm$\Phi$ $\times$ 8.1mm, 128.82 kHz in 9.5 mm$\Phi$ $\times$ 9.5mm, 85.22 kHz in 14.3mm$\Phi$ $\times$14.3mm. That frequency is λ/2 resonant frequency. AE sensor of 9.5mm$\Phi$ $\times$9.5mm responded higher than the other coupled vibration mode AE sensor at the partial discharge detection in GIS.

(Ba$_{0.5}$Sr$_{0.5}$)TiO$_3$ thin films were fabricated at different RTA temperatures and thicknesses by Sol-Gel method. Solution consisting of acetate powders and titanium isopropoxide in a mixture of acetic acid and ethylene glycol were spin coated onto Pt/Ti/SiO$_2$/Si substrates. The films were annealed in the temperature range of 650~80$0^{\circ}C$ for 3 minutes by rapid thermal annealing. These BST thin films were fully crystallized at 75$0^{\circ}C$ and showed a maximum dielectric constant value of $\varepsilon$$_{r}$=~468 and dielectric loss was ~0.025 at a thickness of approximately 4000$\AA$.EX>.>.

Solid solution ceramics having various ratios between xPb( $Y_{1}$2/T $a_{1}$2/) $O_3$ and Pb(Z $r_{0.52}$ $Ti_{0.48}$) $O_3$were synthesized by a conventional solid state reaction for well sintered specimens, dielectric and piezoelectric prperties were studied as a function of composition. The dielectric constant of PYT-PZT ceramics of 4 mol% PYT was 1,424 at room temperature. The maximum value of electromechanical couping facotr $k_{p}$ of 51% $k_{t}$ of 30% were obtained at the composition of 4 mol% PYT, howerver mechanical quality factor( $Q_{m}$) had a minimum value of 69 at 4 mol% PYT. Also the maximum value of piezoelectric constant of $D_{33}$(310[pC/N]) and $d_{31}$(-131[pC/N]) were obtained at the composition of 4 mol% PYT content.ntent.t.t.t.

Effects of additives on the ceramic and electrical properties of Pb(Y$_{1}$2/Ta$_{1}$2/)O$_3$-PbZrO$_3$-PbTiO$_3$ceramics in a perovskite type structure were investigated. The dielectric and piezoelectric properties of the base composition were improved markedly through selection of Fe$_2$O$_3$ additives in proper amounts. The composition Pb(Y$_{1}$2/Ta$_{1}$2/)O$_3$-PbZrO$_3$-PbTiO$_3$ obtained the dielectric constant ($\varepsilon$$_{r}$=1,425). Also, electromechanical couping factors for planar(k$_{p}$) and piezoelectric constant(d$_{33}$) were obtained 0.50 and 294[pC/N] at the additives 0wt% Fe$_2$O$_3$ respectively. The mechanical quality facor(Q$_{m}$) of Pb(Y$_{1}$2/Ta$_{1}$2/)O$_3$-PbZrO$_3$-PbTiO$_3$+Fe$_2$O$_3$(0.3 wt%) is about 510.510.510.

The standing waves of the fourth bending mode of vibration and first longitudinal mode of vibrator were utilized to construct a ultrasonic linear motor. The geometrical dimensions of the vibrator were determined by Euler-Bernoulli theoty. FEM(finite element method) employed to calculate the vibration mode of the metal-piezoceramic composite thin plate vibrator. ANSYS was used to design positions of the projections and calculate displacement of vibrator.

In this study, the piezoelectric ceramics PZT powder was synthesized by Wet-Dry combination method. The flexible 1-3-0 type composites were fabricated with piezoceramic PZT and Eccogel polymer matrix embedded 3rd phase. This paper represents the acoustic properties with various 3rd phase wt.%. The acoustic impedance of 1-3-0 type composites was lower than that of single phase PZT ceramics. The pulse-echo response of transducer fabricated with 1-3-0 type composites was better than solid PZT transducer.

Using Se as a photoconductive element and ZnS as a luminescent element, a Se/ZnS thin film device for light amplifier applications was fabricated and its characteristics were investigated. The Se/ZnS thin film light amplifier was fabricated by evaporating the ZnS thin film on an ITO(Indium Tin Oxide) glass and the Se thin film on the ZnS thin film in sequence. The results of the characteristics investigation are summarized as follows: (1) When the frequency of an excitation voltage was increased, both the brightness response and the brightness saturation of the Se/ZnS thin film light amplifier began to start at a higher light input. (2) The gain of the Se/ZnS thin film light amplifier was dependent upon the amplitude and the frequency of the excitation voltage as well as an external light input. (3) When the Se/ZnS thin film light amplifier was excited by a direct current of a constant voltage, the frequency of the output brightness was\\`equal to the frequency of the input light applied. When the light amplifier was excited by a sinusoidal voltage of 60 Hz, the frequency of the output brightness was 120 Hz.

Ferroelectric PZT heterolayered thin films were fabricated by spin coating method on the Pt/Ti/SiO$_2$/Si substrate using PZT(10/90) and PZT(90/10) metal alkoxide solutions. All PZT heterolayered films showed a homogeneous grain structure without presence of the rosette structure. It can be assumed that the lower PZT layers a role of nucleation site or seeding layer for the formation of the upper PZT layer. Zr and Ti diffusion into the Pt electrode were mainly distributed at the surface of Pt electrode beneath the PZT/Pt interface. The PZT/Pt interfacial layer showed a microstructure characterized by a grain phase surrounded by a Pb-deficient pyrochlore matrix phase. The relative dielectric constant and the dielectric loss of the PZT-6 film were 567 and 3.6, respectively.

The purpose of this study is to establish the design theory of a DR ceramic bandpass filter used for WLL basestations and to research on the design theory of bandpass filter. The design procedure is circuit parameters and structural parameters will be derived. It was observed that the filter characteristics at the simulations

In order to accurately measure the high voltage of 22.9[kV] power distribution lines, we investigated the temperature dependence of measuring voltage for single element and stack elements(22, 44, 66 layers, respectively). When one line voltage is 13, 20O[V], the error of measuring voltage with temperature(-25[$^{\circ}C$]~50[$^{\circ}C$]) was decreased with increasing of stack number and stack element with 66 layers was the least error of ${\pm}0.87%$.

In this paper, a windmill type ultrasonic motor operated by single-Phase AC electric field was fabricated, and then torque characteristics were investigated. A metal-ceramic composite component was used as the stator\`s vibrator to generate ultrasonic vibrations. The windmill type ultrasonic motors has only three components; a stator element with two wind-mill shape slotted metal endcaps, a rotor and a bearing. In this parer we measured torque, when stator\`s slot was changed Iron 4, 6, 8. Brass metal was pressed with umbrella-type using metal molt then slot of 3 kind was manufactured. The maximum revolution speed was 388(rpm) in the case of a small ultrasonic motor of 11.35 mm diameter, 8 slot and 1.01 mm thickness. The maximum torque of 0.17 mNm was obtained at a speed of 131 rpm.

In this paper, the electrical characteristics of λ vibration-mode piezoelectric transformer for applying to CCFL driving inverter was investigated. Piezoelectric transformer was made of PZT - PMN -0.5wt% N $b_2$ $O_{5}$ composition. As a results of the electrical characteristics of piezoelectric transformer, when applied voltage was 35[ $V_{rms}$] in 100[k$\Omega$] load resistance, output voltage was about 510[ $V_{rms}$] and output power was more than 2[W]. As output power increased, step-up ratio and temperature was very stable until output power was 2.5(W). Also, Efficiency was maximum in 70[k$\Omega$] load resistance, and about 89[%]. Also, when piezoelectric transformer was continuously driven for 10[hrs], output voltage and temperature change ratio was fess than 10[%], and very stable. Conclusively, piezoelectric transformer fabricated in this paper can be applied to piezoelectric inverter for CCFL driving.g.

본 논문에서는 경남산 고령토를 이용하여 고 실리카 제올라이트인 ZSM-5를 조제하는 방법에 대하여 검토한다. KOH를 알칼리 종으로 하여 ZSM-5를 합성하였다. 또한 수열합성을 위한 장치를 제작하여 회전속도 및 반응온도를 제어하였다. Si$_2$/Al$_2$O$_3$의 몰비와 $K_2$O/SiO$_2$의 몰비에 따른 결정생성물의 영역을 밝혔다. 또한, 생성된 ZSM-5를 SEM 및 X선 회절장치로 확인하였다. 또한, 반응시간에 따른 고체회수율 및 ZSM-5의 펴크강도를 관찰하였다. 또한, ZSM-5의 생성을 위한 반응시간을 알았고, ZSM-5가 소멸되기 시작하는 시간을 알았다. 또한 ZSM-5는 SiO$_2$/A1$_2$O$_3$의 몰비의 증가 및 반응시간의 증가에 의해 $\alpha$-Quartz로 전환되어짐을 알았다.

The effect of monoclinic $ZrO_2$(pure) and tetragonal $ZrO_2$ containing 5.35wt% $Y_2$$O_3$(Y-TZP) addition on the mechanical properties and thermal shock resistance of $Al_2$$O_3$ ceramic were investigated. The addition of $ZrO_2$(m) and Y-TZP increased sintering density of $Al_2$$O_3$. The vickers hardness increased with increasing the volume fraction of Y-TZP going through a maximum at 20wt%. The hardness of the specimens was found to be depend on the sintering density. With increasing the volume fraction of $ZrO_2$(m) and Y-TZP, the fracture toughness of the composite is increased. This result may be taken as evidence that toughening of ${Al_2}{O_3}$ can also be achieved by the transformation toughening and microcrack toughening of $ZrO_2$. The property of the& shock for ${Al_2}{O_3}$-$ZrO_2$ composites was improved by increasing the volume fraction of monoclinic $ZrO_2$(pure).Grain size increased with increasing the volume fraction of $ZrO_2$.

The equation of output voltage from the PVDF was derived. When impact force applied to the PVDF films of cantilever beam and one-end fixed, other-end supported beam structure, output voltage equation induced. Experimental output voltages by falling ball agreed quite well with induced theoretical data. This PVDF film showers to be in high possibility in a warning system of abnormal pulse rate and breathing, and in detecting impact force and/or mechanical energy.

We have investigated the dielectric and electrical characteristics of palrnitic acid(PA), stearic acid(SA) and arachidic acid(AA) Langmuir-Blodgett(LB) films because these fatty acid systems have a same hydrophilic group and a different hydrophobic one(alky1 chain lqngth). The dielectric characteristics such as the capacitance-frequency(C-F) characteristics and the dielectric dispersion and absorption characteristics of PA, SA and AA through-plane were measured. In the result, the relative dielectric constants of PA, SA and AA LB films were about 3.0-4.6, 2.7-4.1 and 2.4-3.8, respectively. The relative dielectric constants were decreased in proportion to the chain length of alkyl group. Also, the dielectric dispersion and absorption of each fatty acid LB films have arisen from the dipole polarization in the range of $10^4~10^5[Hz]. And, the conductivity of PA, SA and AA LB films obtained from I-V characteristics were about $9{\times}10^{-14}, 3{\times}10^{-l4} and 5{\times}10^{-15}[S/cm], respectively. These results have shown the insulating materials and could control the conductivity by changing the length of alkyl group. Also, we have confirmed that the barrier height of fatty acid systems were about 1.32-1.40[eV] and the dielectric constant were about 3.0-4.2. These values were almost the same ones obtained from dielectric characteristics.

We have fabricated insulating thin films using p-hexadecoxyphenol(p-Hp) that was formed phenol-formaldehyde resin of crosslinked structure from reaction with formaldehyde by LB technique. For fabricated MIM device, the possibility for insulating layers of electronic were investigated by electrical properties of their LB films according to crosslinking of LB films current-voltage (I-V) properties and frequency-capacitance (C-F) characteristics. We have provided evidence for the high insulating performance of phenol-formaldehyde thin films by the LB method. Conductivity of their LB films was as follows: pure water > 1 % aq. Formaldehyde > heat treatment, in the current-voltage (I-V) characteristics. It is demonstrated that insulation properties of crosslinked p-HP LB films were improved. In capacitance-frequency properties, the heat-treated p-HP LB films for crosslinking showed a low relative dielectric constant.

This Paper Presents the optimized design of micro-heaters using 501(Si-on-insulator) substrate and oxide-filled trench structure In order to justify a lumped model approximation and thermal boundary assumptions, two-dimensional FDM(finite difference among which conduction is the dominant heat dissipation path. Compared with no-trenchs on the SOI structure, the micro-heaters with trench structures has properties of low heater loss and good thermal isolation. The simulation results show that the heater loss decreases as the number. width and distance of trenchs increases.

This paper describes on the electrical and physical charateristics thin-film type Pt-RTD\\`s on Si wafers, in which MgO thin-films were used as medium layer in order to improve adhesion of Pt thin-films to SiO$_2$ layer. The MgO medium layer had the properties of improving Pt adhesion to SiO$_2$ and insulation without chemical reaction to Pt thin-films and the resistivity of Pt thin-films was improved. In the analysis of properties of Pt-RTD, TCR value had 3927 ppm/$^{\circ}C$ and liner in the temperature range of room temperature to 40$0^{\circ}C$

This paper describes on the fabrication and characteristics of hot-film type micro-flowsensors integrated with Pt-RTD\`s and micro-heater on the Si substrate, in which MgO thin-films were used as medium layer in order to improve adhesion of Pt thin-films to SiO$_2$ layer The MgO layer improved adhesion of Pt thin-films to SiO$_2$` layer without any chemical reactions to Pt thin-films under high as gas flow rate and its conductivity increased due to increase of heat-loss from sensor to external. Output voltage was 82 mV at N2 flow rate of 2000 sccm/min, heating power of 1.2W. The respons time was about 100 msec when input flow was step-input

This paper describes on thinning SDB SOI substrates by SDB technology and electrochemical etch-stop. The surface of the fabricated SDB SOI substrates is more uniform than that grinding or polishing by mechanical method, and this process is possible to accurate SOI thickness control. During Electrochemical etch-stop, leakage current versus voltage curves were measured for analysis of the open current potential (OCP) point and the passivation potential (PP) poin and determinated to anodic substrates were analyzed by using AFM and SEM, respectivelv.

The purpose of this study is to research and develop V2Os-AC(activated carbon) composite electrode for supercapacitor. Supaercapacitor cell of V2Os-AC composite electrode with 25P70FLiCIO$_{4}$/PC$_{10}$/EC$_{10}$ polymer electrolyte bring out good capacitor Performance below 3V. The discharge capacitance of V2Os-AC(30:70) composite with 70wt.% AC in 1st and 200th cycles was 9.6 and 8.2 F/g at current density of 1m7/cm2. The capacitance of V$_2$O$_{5}$-AC composite with 70wt.% AC capacitor was larger than that of others. The coulombic efficiency of supercapacitor at discharge process of 1 and 200 cycles were 96 and 100%, respectively. V$_2$O$_{5}$-AC composite supercapacitor with 70wt.% AC content showed good capacitance and stability with cycling.ing.ing.

The purpose of this study is to research and develop PAn composite electrode for EDLC. EDLC cell of PAn composite electrode with 1M LiClO$_4$/PC brings out good capacitor performance below 4.0V. The radius of semicircle of PAn composite electrode adding 15wt% SP270 was absolutely small. The total resistance of EDLC cell mainly depended on internal resistance of the electrode. The discharge capacitance of PAn composite with 15wt% SP270 in 1st and 200th cycles was 42 and 42 F/g at current density of 1mA/cm$^2$. The capacitance of PAn composite with 15wt%. SP270 capacitor was larger than that of PAn capacitor without SP270. The coulombic efficiency of EDLC at discharge process of 1 and 200 cycles were 94 and 100% respectively. PAn composite EDLC with 15wt% SP270 content showed good capacitance and stability with cycling.

The purpose of this study is to research and develop solid polymer electrolyte(SPE) for Li polymer battery. This paper describes temperature dependence of conductivity, impedance spectroscopy, electrochemical properties of PVDF/PAN electrolytes as a function of a mixed ratio. PVDF/PAN based polymer electrolyte films were prepared by thermal gellification method of preweighed PVDF/PAN, plasticizer and Li salt. The conductivity of PVDF/PAN electrolytes was 10-3S/cm. 20PVDF5PANLiCIO$_4$PC$\sub$10//EC$\sub$10/ electrolyte shows the better conductivity of the others. 20P7DF5PANLiCI$_4$PC$\sub$10//EC$\sub$10/ electrolyte remains stable up to 5V vs. Li/Li$\^$+/. Steady state current method and ac impedance used for the determination of transference numbers in PVDF/PAN electrolyte film. The transference number of 20PVDF5ANLICIO$_4$/PC $\sub$10//EC$\sub$10/ electrolyte is 0.48

저 전압용 형광체는 최근에 활발히 연구가 진행되고 있으며 가장 대표적인 형광체가 ZnO Zn 녹색 형광체이다. ZnO : Zn 형광체는 자체발광형 형광체로써 ZnO을 환원분위기 하에서 열처리를 함으로써 얻을 수 있다. 본 연구에서는 자발착화 연소반응법(Glycine Nitrate Process)을 이용하여 ZnO : Zn 분말을 합성하고 형광특성 및 분말특성을 알아보았다. 출발물질로는 Zn Nitrate와 Glycine을 이용하였고 자발연소 반웅이 발생하는데 적절한 글리신의 양을 확인하기 위해서 글리신과 양이온의 비를 변화시키며 ZnO를 합성하였다. 그리고 Zn Excess가 생겨난 앙과 그에 따른 형광특성을 관찰하기 위해 $N_2$ 분위기 에서 각기 50$0^{\circ}C$, 75$0^{\circ}C$, 95$0^{\circ}C$의 온도에서 열처리를 행하였다. 제조된 ZnO 분말의 입자형태와 결정상 태는 SEM과 XRD를 이용하여 분석하였고 TG-DTA를 측정하여 열처리온도에 따른 질량감소(Zn excess)를 관찰하였다. 또 Particle size analyzer로 분말의 크기를 알아보았고 형광체로써의 발광특성을 살펴보기 위해 PL을 이용하여 발광피크를 관찰하였다.

The importance of rechargeable lithium cells has been emphasized. So a large variety of materials has been discovered and evaluated for use as reversible cathodes and electroyltes. This paper examines the charge/discharge properties and the charge/discharge cycling life of Li$_2$O-P$_2$O-V$_2$O$_{5}$Li cells. In audition, DTA tests were carried out on Li$_2$O-P$_2$O-V$_2$O$_{5}$ glass. As a result the best performance was achieved when 0.3Li$_2$O-0.1P$_2$O$_{5}$-0.6V$_2$O$_{5}$Li cells was mixed with SP270. that is discharge capacity of 240mAh/g have been achieved. In addition this battery exhibited good cycling performance. Considering these results we expected utilization of the Li$_2$O-P$_2$O-V$_2$O$_{5}$ glass as a cathode material in a secondary battery.y battery.

To improve the cycle performance LiM $n_2$ $O_4$as the cathode of 4V class lithium secondary batteries, the cathode properties of the cubic spinel phases LiM $g_{x}$ /M $n_{2-x}$/ $O_4$ synthesized at 80$0^{\circ}C$ were examined. All cathode material showed spinel phase based on cubic phase in X-ray diffraction however. other peaks gradually exhibited and became intense with the increase of x value in LiM $g_{x}$ /M $n_{2-x}$/ $O_4$. The cycle performance of the LiM $g_{x}$ /M $n_{2-x}$/ $O_4$was improved by the substitution of $Mg^{2+}$ for M $n^{3+}$ in the octahedral sites. Specially LiM $g_{0.1}$/M $n_{1.9}$ / $O_4$cathode materials showed the charge and discharge capacity of about 130~125mAh/g at first cycle and about 105mAh/g after 50th cycle. It is excellent than that of pure LiM $n_{2}$/ $O_4$ which 125mAh/g at first cycle 70mAh/g at 50th. In addition cathode material prepared at 80$0^{\circ}C$ for 24hr and 42hr in the charge and discharge capapcity as well as the cycle stability.ility.y.y.

The diamond thin films are deposited on silicon using MPCVD(Microwave Plasma Chemical Vapor Deposition) method at various deposition microwave power and time. Diamond is deposited with 100 sccm H$_2$ and 2 sccm CH$_4$ by MPCVD. The crystallinity of diamond thin films were increased with increase of microwave power. The growth rate of diamond thin films were increased with increase of time.

There are many efforts to improve electrolytes to satisfy the requirements of a lithium rechargeable battery. We have investigated a binary solvent mixture containing the electrolyte lithium salt($LiBF_4$, $LiPF_6$), that is conductive and electrochemically stable. Ionic conductivities were measured between -5 and $80^{\circ}C$, and cyclic voltammetry between 2.5 and 4.3 V were measured by SUS or platinum electrode.

We prepared diamond thin films on WC-Co substrate in a mixtured $H_2-CH_4-O_2$, gas, using 13.%MHz RF PACVD. Scanning electron microscopy, X-ray diffraction and Rarnan spectroscopy were used to analyze the characteristics of thin film, and tribometer of ball-on-disk type were used to test the wear resistance between thin film and substrate. The good diamond quality and wear resistance was appeared with cemented tungsten carbide substrate treated with oxygen plasma.

The Study of this paper is to establish the optimum fabricating condition of specimens using Vapor Deposition Polymerization Method which belongs to a mode of preparation of functional organic thin films with dry process and to develop thin film type humidity sensor which has good humidity sensitive Characteristics. Scanning electron microscopy Atomic force microscopy were used to analyze the characteristics of thin film and the basic structure of the humidity sensor is a parallel capacitor which consists of three layers of Al/PI/Al. The characteristics of fabricated samples were measured under various conditions and obtained linear characteristics in the range of 20∼80%RH independent of temperature change and low hysteresis characteristics.

Amorphous carbon nitride thin films were prepared on pretreated silicon(100) substrate in sputtering graphite target by activated gas phase using RF reactively sputtering. We measured the FT-IR spectrum to identify C=N(nitrile)stretching mode(2200cm$\^$-1/), C-H stretching mode(2800cm$\^$-1/), C-H bending mode, C=C stretching mode C=N(imino) mode(1680cm$\^$-1/ ), and the XPS to investigate chemical structure of surface. By the results of FT-H and XPS spectrum, We confirmed that amorphous carbon nitride films with typel (C(1s): 285.9[eV], N(1s): 398.5[ev]) and type 2(C1s): 287.5[eV, N(1s): 400.2[eV]) successfully were synthesized by RF reactively sputtering

The influence of ion beam energy and reactive oxygen partial pressure on the electrical and crystallographic characteristics of transition metal oxide compound(Cr0x) film was studied in this paper. Chromium oxide films were prepared onto the coverglass using Ion Beam Sputter Deposition(1BSD) technique according to the processing conditions of the partial pressure of reactive oxygen gas and ion beam energy. Crystallinity and grain size of as-deposited films were analyzed using XRD analysis. Thickness and Resistivity of the films were measured by $\alpha$-step and 4-point probe measurement. As results, according to the XRD, XPS and resistivity measurement, the deposited films were the cermet type films which has a crystal structure including amorphous oxide(a-oxide) phase and metal Cr phase simultaneously. The increasernent of the ion b m energy during the deposition process happened to decreasernent of metal Cr grain size and the rapid change of resistivity above the critical $O_2$ partial pressure.

In this paper we studied that the effect of substrate temperature on crystallography and electrical properties of ZnO thin films. Facing Targets Sputtering system can deposit thin films in plasma-free situation and change the deposition condition in wide range. And prepared thin film\`s c-axis orientation and grain size were analyzed by XRD(x-ray diffractometer). In the results, we suggest that FTS system is very suitable to preparing high quality ZnO thin film with good c-axis orientation.

We prepared CoCr thin film for perpendicular magnetic recording media by facing targets sputtering system(FTS system) which can deposit a high quality thin films in plasma-free state and wide range of working pressure. In this study, we investigated that the effect of sputtering condition , that Argon gas pressure and substrate temperature, on magnetic and crystallographic characteristic of CoCr thin film as well as the variation perpendicular coercivity in changing of film's thickness. Crystallographic and magnetic characteristic of prepared thin films were evaluated by x-ray fractometry(XRD), vibrating sample magnetometer(VSM) and kerr hysteresis loop measurement.

In this paper, the electrical properties of Pt/YMnO$_3$/Si(100) structures with difference rapid thermal annealing (RTA) treatment were investigated. YMnO$_3$films were obtained without buffer layers, introducing oxygen. A typical value of the dielectric constant was about 20 derived from 1MHz capacitance-voltage (C-V) measurement and the resistivity of the film at the field of 150kV/cm was about 1.34$\times$10$^{12}$ $\Omega$ . cm. The minimum interface state density around midgap was estimated to be about 5$\times$10$^{11}$ cm$^2$. eV.

The growth of $\textrm{YMnO}_3$ films directly on Si(100) substrates by RF magnetron sputtering system has been performed. The structural properties of $\textrm{YMnO}_3$ films on Si(100) by rapid thermal annealing(RTA) analysed by XRD(X-ray diffraction). The c-axis oriented $\textrm{YMnO}_3$ peaks were observed deposited in $\textrm{YMnO}_3$/Si(100) structure at RF power of 100W and at a temperature range of $840^{\circ}C$~$870^{\circ}C$ in oxygen ambient.

In this paper we applied TVS(Triangular Voltage Sweep) method to calculate the mobile ionic charge densities in some ferroelectric thin films. During the measurement, the temperature of specimens were maintained at 20$0^{\circ}C$. By this method, the amount of mobile ionic charge Q$_{m}$ and mobile ionic charge density N$_{m}$ of a MFIS structure were calculated 3.5 [pC] and about 4.3$\times$10$^{11}$ [ions/cm$^2$], respectively. In order to successful TVS measurement, the gate leakage current density of films must be low 10$^{-9}$ (A/cm$^2$) order.der.

The objective of this study is to deposited the preparation of SrTiO$_3$dielectric thin films on Ag/barrier-mater/Si(N-type 100) bottom electrode using a conventional rf-magnetron sputtering technique with a ceramic target under various conditions. It is demonstrated that the leakage current of films are strongly dependent on the substrate temperature. The current-voltage characteristics are influenced by the Schottky effict. The resistivity properties of films deposited on silicon substrates were very high resistivity. Conduction mechanisms in the films was dependent on the substrate temperature range.

This paper analyzed arbitrary Energy band profile heterostructures by solving Schrodinger\`s equation the Poisson's equation self-consistently. Four different concentrations positively ionized donors holes in the valence band free electrons in the conduction band and 2DEG are taken to account for the whole system. 2DEG from both of the structures are obtained and compared with the data available in the literatures. Differential capacitances are also calculated from the concentration profiles obtained. Finally theoretical predictions for both of 2DEGs and the capacitances show good agreement with the experimental data referred in this study.

In this Paper, we present simple physical model of the Capacitance characteristics for GaAs MESFET\`s in wide temperatures. In this model, gate-source and gate-drain capacitances are represented by analytical expressions which are classified into three different regions for bias voltage. This model contained the temperature dependent variable that is the built-in voltage and the depletion width. Using the equations obtained in this work a submicron gate length MESFET has simulated and theoretical result are in good agreement with the experimental measurement.

NiSi were formed from either Ni monolayer or Ni/Ti bilayer and the SADS method was applied to fabricated PMOSFET with Ni-polycide gate electrodes. PMOSFET made from Ni monolayer showed thermal stability unto 300~40$0^{\circ}C$ for 600sec., and excellent C-V characteristics for long time of drive-in anneal than PMOSFET made from Ni/Ti bilayer. This was attributed to easier decomposition and subsequent Ni diffusion to SiO$_2$ layer, probably due to the presence of Ti unreducing process

The Si-SiO$_2$interface trap and nitride bulk trap distribution of SONOSFET(polysilicon-oxide-nitride-oxide-semiconductor)NVSM(nonvolatile semiconductor memory) cell were investigated by single charge pumping method. The used device was fabricated by 0.35 7m standard logic fabrication including the ONO cell process. This ONO dielectric thickness is tunnel oxide 24 $\AA$, nitride 74 $\AA$, blocking oxide 25 $\AA$, respectively. Keeping the pulse base level in accumulation and pulsing the surface into inversion with increasing amplitudes, the charge pumping current flow from the single junction. Using the obtained I$_{cp}$-V$_{h}$ curve, the local V$_{t}$ distribution, doping concentration, lateral interface trap distribution and lateral memory trap distribution were extracted. The maximum N$_{it}$($\chi$) of 1.62$\times$10$^{19}$ /cm$^2$were determined.mined.d.

The effects of electrical positive stress on n-channel LDD and offset structured poly-Si TFT\`s have been systematically investigated in order to analyze the transfer curve\`s shift mechanism. It has been found that the LDD and offset regions behave as a series resistance that reduce the electric field near drain. Hot carrier effects are reduced because of these results. After electrical stress transfer curve’s shift and variation of the off-current are dependent upon the offset length rather than offset region’s doping concentration. Variation of the subthreshold slope is dependent upon offset region’s doping concentration as well as offset length.

In this paper, we have systematically investigated the variation of electrical characteristics with back-gate bias of n-channel SOI MOSFET\\`s. When positive bias is applied back-gate surface is inverted and back channel current is increased. When negative bias is applied back-gate surface is accumulated but it does not affect to the electrical characteristics.

The undoped-InSe and Sn-doped InSe single crystals were grown by vertical Bridgman method and their properties were invesigated. The orientations and the crystallinites of these crystals were identified by X-ray diffraction(XRD), double crystal rocking curve(DCRC) and etch-pit density(EPD) measurements. From the Raman spectrum at room temperature, TO, LO modes and together with their overtones and combinations were observed. Optical properties were inves ated by PL at 12K and direct band gap of these crystals obtained from optical absorption spectrum. Compared with undo&-InSe, electrical properties of Sn-doped InSe were increased and the electrical conductivity type were n-type. But electrical properties along growth direction of crystals and radial direction of wafer showed nearly uniform distribution. The Zn diffusion mechanism in InSe could be explained by interstitial-substitutional and vacancy complex models and the activation energy of 1.15-3.01eV were needed for diffusion.fusion.

One of the most critical problem in etching of platinum was generally known that the etch slope was gradual. therefore, the addition of $N_2$ gas into the Ar/C1$_2$ gas mixture, which has been proposed the optimized etching gas combination for etching of platinum in our previous article, was performed. The selectivity of platinum film to oxide film as an etch mask increased with the addition of N2 gas, and the steeper etch slope over 75 $^{\circ}$ could be obtained. These phenomena were interpreted the results the results of a blocking layer such as Si-N or Si-O-N on the oxide mask. Compostional analysis was carried out by X-ray photoelectron spectroscopy (XPS) and secondary ion mass spectrometry (SIMS). Moreover, it could be obtained the higher etch rate of Pt film and steeper profile without residues such as p.-Cl and Pt-Pt ant the addition N\ulcorner of 20 % gas in Ar(90)/Cl$_2$(10) Plasma. The Plasma characteristic was extracted from optical emissionspectroscopy (OES).

본 논문에서는 열전소자(TEC모듈)를 이용한 에어컨의 개발에 대하여 검토한다. 사용한 TEC모듈의 개수와 TEC모듈의 발열부를 냉각하는 FAN냉각방식과 분사냉각방식에 따른 냉각능력을 평가하였다. 분사냉각방식의 경우에는 기존의 에어컨과 동등한 수준의 냉각능력을 갖는다는 것을 알 수 있었다. 급속냉각은 어렵지만 약 1시간 후부터는 충분히 사용 가능하며, 열전소자 한 개당 약 1평을 냉각할 수 있으며, 기존에어컨의 가격에 비해 약 50∼70%정도로 충분한 가격 경쟁력이 있다. 빙축열 방식 등을 적용하면, peak 쳐t등의 효용성으로 상품화 가능성이 매우 크다고 판단된다.

The thermal properties of epoxy resin/siloxane for the electrical insulation were investigated by using dynamic DSC run method. As the heating rate increased, the peak temperature on dynamic DSC curve increased. From the linear relation on the Kissinger plot the curing reaction activation energy and pre-exponential factor could be obtained. The curing activation energy from the straight line of the Kissinger plot was 46.72 kJ/mol.

Cured epoxy resins are extensively used for the electrical insulation in high-voltage equipments. The bisphenol A-based epoxy resins lured with azine show, especially, good thermal properties and mechanical resistances. For the technical and economic reasons, varing amount of inorganic fillers are added to endow the required special properties. In the large generators and motors of power plants, epoxy insulation is disclosed to the harsh conditions like the superheated steam and abrupt temperature variation. Hygrothermal aging at elevated temperatures tends to induce degradation in epoxy resins. To predict the effect of this degradation in DGEBA/MDA/SN/zeolite system, we proceeded the forced moisture absorption experiment using the autoclave. The thermal properties of the untreated and treated specimens were analyzed by DSC and TGA under the nitrogen flowing condition. The moisture absorption results showed a weight increase during hygrothermal aging at 1207. At the initial aging period, the system leaded to more or less postcuring but more prolonged environmental aging leaded the discoloration of specimen and lowering the T$_{g}$./.

The treeing inhibitors of barbituric acid derivatives and azocompounds effects on the electrical properties of crosslinked low density polyethylene were investigated. The electrical treeing parameters for tree inception voltage, AC breakdown strength. volume resistivity, capacitance and dissipation factor at 1Mz and thermoluminescence measurements were discussed. From the results, 4- (4-nitrophenylazo) resorcinol among the treeing inhibitors was shown good insulation characteristics.

The Maxwell displacement current was generated from 4-octyl-4'-(5-carboxyl-pentamethyleneoxy)- azobenzene (denoted as 8A5H) monolayer Langmuir-Blodgett films prepared on Cr/Au-coated glass substrates due to trans-cis photoisomerization of 8A5H by application of alternate irradiation with UV light and Visible light. The displacement current was generated due to the trans-to-CIS photoisomerization by irradiation with ultraviolet light($\lambda_1$=360nm). Whereas the displacement current was generated in the opposite direction due to the cis-to-trans photoisomerization by photoirradiation with visible light($\lambda_2$=450nm). Finally, We concluded that Displacement current change according to power capacity photoirradiation, the more higher generate the more higher power capacity magnitude.

We have examined the electrical properties of arachidic acid Langmuir (L) films by using a displacement current measuring technique with pressure stimulation. We give pressure stimulation into organic thin films and detect the Induced displacement current. The structure of manufactured device is Au/arachidic acid/Al, the number of accumulated layers are 17, 19 and 21. Also, we then examined of the MIM device by means of I-V The I-V characteristic of the device is measured from 0 to +1[V]. The insulation property of a thin film is better as the distance between electrodes is larger.

In order to determine what influences the interfacial breakdown in EPDM/XLPE laminates, We made the breakdown test ceil and this was pressure controllable breakdown test cell. We make the needle electrode (tip radius: about 10 micrometer) using electrochemical method. We studied the interfacial silicone oil was higher than that with silicone grease. As a function of heat treatment time in a vacuum, interfacial breakdown strength increased much in XLPE/EPDM laminates pasted with silicone grease but increased a little in that with silicone oil.

Polyacetals with melamine were investigated in terms of mechanical properties. It was found that tensile strength, impact strength and elongation were decreased with the increase of melamine content up to 30 par, flexural strength had no remarkable changes. For master-batch using polyurethane as carrier resin, in which the ratio of polyurethane to melamine was 2:1, tensile strength and flexural strength were decreased and impact strength remained unchanged with melamine me content.

The polymer insulators which are installed on outdoor have a great advantage than porcelain and 71ass, due to suppression of leakage current, light weight, low cost, etc. It needs variable evaluation methods for application of these insulators on service. The analysis of measuring leakage current is useful for ageing diagnosis because of monitoring in real-time. In this paper, we look over the recovery of hydrophobicity of silicone rubber in mini salt-fog chamber with leakage current monitoring. also, we understand the relation of between hydrophobicity and leakage current and discuss on method of leakage current monitoring.

In this study, weight loss, ESDD, surface conductivity and leakage current were measured at the different saline solutions by salt fog method. The magnitude of leakage current was higher at higher conductivity of 2 S/m saline water, but weight loss ESDD and surface conductivity which are indices of degradation were lower. This is considered that the current includes mainly ohmic component which doesn\`t contribute to surface degradation. In addition, it is shown that FFT could be useful in measuring initial transition from hydrophobic to hydrophilic surface.

The main problem in porcelain as a high voltage insulator is that the water film is felled on the insulator surface due to rain, flog, and dew. In the presence of contamination. leakage current increases which may lead to flashover that could be followed by an outage of the power system. These days, high voltage polymer outdoer insulators have been studied and widely used, because they have excellent electrical and mechanical properties, superior performance of flashover for contamination. light weight, easy installation or handling. no maintenance during service, competitive price, and so on. First of a1l the excellent performance of the silicone rubber in polluted and wet conditions is attributed to the ability of the material to maintain the hydrophobicity of the surface in the presence of severe contaminants and wet conditions. This is due to a low surface energy of the silicone rubber. But the leakage current and some surface discharge occurs on the surface of insulator when the insulator is used for a long time. So the leakage current and the surface discharge current are important lo estimate the condition of the silicone rubber surface. In this paper, the average leakage current the surface discharge current the surface rubber surface with the salt fog condition for the first stage.

In this study, we evaluated the relation of the test and theory of low impedance cable As the result We could obtained the result in accordance the test with theory in 85 ~ 95% tolerance . Test method measured the relation of the current and temperature of cable jacket in using CT to put in 3 phase AC current simultationiously. The current and temperature of it was calculated in according to JCS- l68D

XLPE (Cross-Linked Polyethylene) which has good electric and physical characteristic is ideal material for Insulating material with force high volumetric resistance arid high dielectric constant. We study abort electric characteristics of XLPE by DCP and TMPTA content ration. DCP (Dicumylperoxide), which was used cross-linked agent contest, was changed from 1.0 to 0.5phr. TMPTA (Trimethyl-olpropane), which was used co cross-linked agent content, was changed from 0.5 to 1.5phr. Thermal analysis by DSC in order to observe tendency of Tg according to DCP and TMPTA content. Specimen 3 that content DCP 2.0phr and TMPTA 0.5phr has the highest value Breakdown strength cf specimen 3 (DCP 2.Ophr, TMPTA 1.0phr) is the highest, value and it increased in specific inductive capacity. This due to difference from cross-linked state by DCP and TMPTA content ratio.

Light-emitting diode(LEDs), diode arrays, and phosphor display panels are finding increased use in a variety of commercial applications. Present and anticipated application of these devices include solid state indicator and display systems. In this work, Phosphor based on ZnS:Cu are used. Relation by luminance with the thickness of insulating layer and phosphor layer are discussed. Increased thickness of insulating layer are stable on voltage to 300V. By considering thickness and voltage, optimal structure and thickness are investigated. In order to maximize even surface emission, various sieving processes are introduced. 150cd/m$^2$ luminance by various wave intensity are investigated in stable voltage and frequency.

The luminescence of bismuth and cerium doped yttrium aluminum based Phosphors $Y_{3}$/Al$_{5}$/O$_{12}$ and (Y$_{0.8}$/Gd$_{0.2}$)$_3$Al$_{5}$/O$_{12}$ prepared by a solid-state reaction method were studied. These samples which were fired at 1, 20$0^{\circ}C$ show the characteristic X-ray diffraction patters for the main phase(420) of YAG. This study indicates that the both flux and remained bismuth after the firing phosphor materials give rise to affect the photoluminescence properties. Therefore, it was investigated that both the XRD patterns arid the PL properties were affected by the controlling experimental process variables.riables.les.

본 연구에서는 유기 전기 발광 소자에서 녹색 발광층으로 사용되는 terbium(Tb) complexes와 europium(Eu) complex, 정공 수송층으로 사용되는 TPD (N, N\`-diphenyl-N,\`(3-methylphenyl)-1, 1\`biphenyl-4, 4\`-diamine), 그리고 전자 수송층으로 사용되는 Alq$_{3}$ (trois(8-hydroxyquinolino)aluminum), Bebq$_2$들의 Uv/Vis. 홉광도와 PL 스펙 트럼과 같은 광학적 특성을 조사하였으며 또한 이러한 물질들을 이용하여 다양한 종류의 유기 전기 발광 소자를 제작하고 제작된 소자들의 전류밀도-전압-조도 등의 전기 . 광학적 특성을 조사하였으며, 그 결과 다 음과 같은 결곤을 얻을 수 있었다. 다양한 ligand를 갖는 Tb complex들의 경우에도 EL 스펙트럼의 파장대 (wavelength)는 546nm~548nm의 녹색 발광을 하는 것을 알 수 있었고, 제작된 소자 중에서 Tb(ACAC)$_3$(Phen) 을 발광충으로 하고, TPD, 그리고 Bebq$_2$를 각각 정공 수송층, 전자 수송 층으로 한 소자가 가장 낮은 구동 전압을 갖는다는 것을 확인하였으며 logJ-logV 특성에서도 모든 전계 구간에서 이러한 구조의 소자가 가장 높은 전류밀도를 나타냈으며 저 전계 구간에서 전류밀도 타이가 가장 컸다. 소자의 전류밀도와 휘도의 관계에 있어서는 제작된 네 종류의 소자 중 Tb(ACAC)3(Cl-Phen)를 발광층으로 하고 TPD, 그리고 Bebq2를 각각 정공 수송층, 전자 수송 층으로 한 소자가 가장 휘도가 우수한 것을 알 수 있었다. 또한 red (europium complex), green (terbium complex), 그리고 blue (TPD) 색깔을 나타내는 유기 재료를 사용하여 한 소자에서 백색 소자를 제작하여 cyclic voltametric방법을 이용하여 각 유기 물질들의 에너지 준위를 조사하여, 각각의 소자들을 에너지 밴드 다이어그램(energy band diagram)으로 자세히 설명하였다.

In this study, we investigated pretilt angle generation and liquid crystal alignment by UV light irradiation during imidization of polyimide. Generated pretilt angle of NLC by using in-situ UV photo-alignment method was smaller than that of the conventional UV photo-alignment method. Also, generated pretilt angle of NLC tends to increase by annealing. We found that in-situ UV photo-alignment method has higher thermal stability of LC alignment, but it has a disadvantage to control pretilt angle.

Effect of alignment layers on pretilt angle generation and electrical characteristics in nematic liquid crystal(NLC) by using photo-alignment techniques on polyimide (PI) surface with side chain were studied. The generated pretilt angle of the NLC on rubbed PI surface with 1-layer is almost the same as that of the 2-layers. However, the generated pretilt angle of the NLC on photo-induced PI surface with 2-layers is larger than that of the 1-layer. Therefore, the pretilt angle of the NLC on photo-induced PI surface is attributed to surface roughness due to photo-depolymerization of the polymer with UV light irradiation on PI surface. Next we observed the same characteristics of voltage-transmittance (V-T) and response time for 1- and 2-layers on PI surface. We also observed the same voltage holding ratio (VHR) characteristics for 1- and 2-layers on photo-aligned PI surface. Consequently, we suggest that the VHR of photo-aligned TN-LCD is higher than that of the rubbing-aligned TN-LCD.

We synthesised a novel photo-alignment material of PCEMA (poly(cinnamolyethyl methacrylate)) on photo-dimerization reaction. Next we investigated the electro-optical (EO) characteristics of photo-aligned twisted nematic (TN)-liquid crystal display (LCD) with linearly polarized ultraviolet (UV) light irradiation on PCEHA surface. The excellent voltage-transmittance characteristics of photo-aligned TN-LCD on PCEMA surface were obtained. The threshold voltage of photo-aligned TN-LCD decreases with increasing the UV light irradiation time on PCEMA surface. Also, the response time of photo-aligned TN-LCD on PCEMA surface is almost the same as rubbing-aligned TN-LCD.

The electro-optical characteristics of photo-aligned vertical-alignment (VA)-liquid crystal display (LCD) with non-polarized ultraviolet (UV) light irradiation of 45\`on homeotropic polyimide (Pl) surface were investigated. LC alignment on photo-aligned VA-LCD is attributed to photo-depolymerized reaction of the polymer with non-polarized UV light irradiation on PI surface. We had good voltage-transmittance (V-T) characteristics of photo-aligned VA-LCD. The response time of photo-aligned VA-LCD was slower than that of the rubbing-aligned VA-LCD. Finally, we suggest that the slow response time of photo-aligned VA-LCD depends on the LC domain.

We have developed an novel vertical-alignment (VA) - $\pi$ cell mode that provides a wide viewing angle and fast response times for negative dielectric anisotropy nematic liquid crystal (NLC) on a homeotropic polyimide (PI) surfaces. We had the good voltage-transmittance curves and low driving voltages were achieved with the novel VA - $\pi$ cell mode without negative compensation film. Iso-viewing angle characteristics using the novel VA - $\pi$ cell mode without negative compensation film of NLC was also successfully observed. As well a fast response time of 31.7ms for the novel VA - $\pi$ cell mode was measured. Consequently, It is seen that by using the novel VA - $\pi$ cell mode the iso-viewing angle, fast response time, and low driving voltage characteristics can be achieved.

This paper presents a proper condition to achieve above 19 % conversion efficiency using PC1D simulator. Cast poly-Si wafers with resistivity of 1 $\Omega$-cm and thickness of 250 ${\mu}{\textrm}{m}$ were used as a starting material. Various efficiency influencing parameters such as rear surface recombination velocity and minority carrier diffusion length in the base region, front surface recombination velocity, junction depth and doping concentration in the Emitter layer, BSF thickness and doping concentration were investigated. Optimized cell parameters were given as rear surface recombination of 1000 cm/s, minority carrier diffusion length in the base region 200 ${\mu}{\textrm}{m}$, front surface recombination velocity 100 cnt/s, sheet resistivity of emitter layer 100 $\Omega$/$\square$, BSF thickness 5 ${\mu}{\textrm}{m}$, doping concentration 5$\times$10$^{19}$ cm$^3$ . Among the investigated variables, we learn that a diffusion length of base layer acts as a key factor to achieve conversion efficiency higher than 19 %. Further details of simulation parameters and their effects to cell characteristics are discussed in this paper.

The design of large area thin film transistor liquid crystal displays (TFT-LCDs) requires consideration of cross-talks between the data lines and pixel electrodes. These limits are imposed by the parasitic capacitive elements present in a pixel. The capacitive coupling of the data line signal onto the pixel causes a pixel voltage error. In this study semi-empirical capacitance model which is adopted from VLSI interconnection capacitance calculations was used to calculate mutual coupling capacitances. With calculated mutual coupling capacitances and given image pattern, the root mean square(RMS) voltage of pixel is calculated to see vertical cross-talk from the first to the last column. The information obtained from this study could be utilized to design the larger area and finer image quality panel.

We measured the optical properties in Ag/chalcogenide films with the exposure of 325nm-Held laser In addition we have investigated the Ag doping mechanism as considering the changes of Ag-concentration distribution and optical energy gap ( $E_{op}$ ) with Photon-dose. The "windows" characteristics of Ag thin film occur around the wavelength of 325 nm and the Ag is evaluated to be transparent, without an absorption, in the region. While the $E_{op}$ of S $b_2$ $S_3$ thin film was changed largely by an exposure of HeNe laser(632.8 nm) an exposure of HeCd laser resulted in relatively small variation of $E_{op}$ . Therefore it is thought that photon absorption at the metal layer plays an important role in Ag photodoping.on at the metal layer plays an important role in Ag photodoping.

The blue emitting BAM Phosphor Particles with various compositions were Prepared by the spray Pyrolysis. The effect of composition on the morphology of BAM particles was Investigated. In the case of BaMgAl$_{10}$ /O$_{22}$ : Eu$^{2+}$, the morphology of particles with sphericity and non-aggregation characteristics disappeared after post-treatment at 1400 $^{\circ}C$ for 3 hrs. On the other hand, the ocher composition particles except BaMgAl$_{10}$ /O$_{22}$ : Eu$^{2+}$ maintained their original morphology after post-treatment, even if the particles were prepared at low temperatures in the spray pryrolysis. The BAM particles with MgAl$_{2}$/O$_4$as intermediate material at low post-treatment temperature had high thermal stability and maintained sphericity of particles after post-treatment. All the samples had main omission peak at 450 nm, which corresponds to blue emission. The optimum post-treatment temperature of BAM:Eu$^{2+}$ particles for the maximum PL(photoluminescence) intensity in the spray pylolysis was 1200 $^{\circ}C$ because of high crystallinity, Phase-Purity, and good morphology.ology.

High brightness (Y$_{x}$/Gd$_{1-x}$ )$_2$O$_3$:Eu Phosphor Particles were directly Prepared in the spray Pyrolysis by adding flux materials such as LiCl and HBO$_3$. The (Y$_{x}$/Gd$_{1-x}$ )$_2$O$_3$:Eu particles prepared from solution with flux material had higher PL (photoluminescence) intensities than those prepared from solution without flux. In the spray pyrolysis, the flux acts as promoter of the growth of crystallite and activation of doping material as in the solid state reaction method. Additionally, the flux improved PL intensity of (Y$_{x}$/Gd$_{1-x}$ )$_2$O$_3$:Eu phosphor particles by densifying the internal structure and eliminating the defect existing inside and surface of (Y$_{x}$/Gd$_{1-x}$ )$_2$O$_3$:Eu phosphor particles.r particles.

The chalcogenide glasses of thin films have superior property of the photoinduced anisotrophy(PA). In this study, we observed the phenomenon of Ag polarized photodoping using the irradiation with polarized He-Ne laser light, in the thin film of chalcogenide As/sub 40//Ge/sub 10//Se/sub 15//S/sub 35/ and the double-layer of Ag doped As/sub 40//Ge/sub 10//Se/sub 15//S/sub 35/. The Ag polarized photodoping result in reducing time of saturation anisotrophy and increasing sensitivity of linearly anisotrophy intensity, up to maximum 220%. In the thin films of chalcogenide, the Ag polarized photodoping will be show a capability of new method that suggested more improvement of photoinduced anisotrophy property

Dot pattern print methods composed of a diffusion film and two prism sheets, have been generally used for backlighting systems of LCDs. However, this methods require complex structures and show high power consumption and optical loss. To improve these disadvantages of conventional backlight units, light guides using highly scattering optical transmissions (HSOT) polymer as scatters, have been introduced. In this study we analyzed multiple scattering effect in light guide by means of Monte carlo simulation based on Mie scattering theory and ray tracing method. As a result it was revealed that scattering intensity depends on the size of scatters. On the other hands, it was shown that scattering efficiency depends on the wavelength of fluorescent lamp as well as the size of scatters.

Electroluminescence is occurred when phosphor is located in electric field. In this paper, we made powder electroluminescent device (PELD) with structured ITO film/Phosphor/Insulator/Silver paste. The transparent electrode was ITO film and green(2704-01) and orange(2702-02) and blue-preen(2703-01) were used as phosphor. The insulator was BaTiO$_3$ and $Y_2$O$_3$, bark electrode was silver paste. To investigate electrical and optical properties of PELDs, EL spectrum, Brightness . Transferred charge density using Sawyer-Towers circuit was measured.

Organic semiconductors based on conjugated thiophene oligomer have great potential to be utilized as an active layer far electronic and optoelectronic devices. In this study, $\alpha$ -sexithiophene($\alpha$-6T) thin films and various electrode materials were deposited by Organic Molecular Beam Deposition(OMBD) and vacuum evaporation respectively. Those films were photolithographically patterned fur measurements. Electrical characterization of the thin film transistor with various channel length were measured, and field effect mobility is calculated by formula.

$Y_2SiO_5$:Ce was considered as blue phosphor for field emission display because it had an excellent resistance against brightness saturation. But unfortunately It hadn't a sufficient brightness to be applied to FED. In this experiment It-$In_2O_3$, MgO and $SiO_2$ were coated onto $Y_2SiO_5$:Ce phosphor in order to improve the cathodoluminance(CL properties. The coating structures were identified to be the crystalline phases of $In_2O_3$ and MgO respectively. They had fine particle-like shape and were distributed on the surface of $Y_2SiO_5$:Ce phosphor. It was found that the CL efficiency of $Y_2SiO_5$:Ce phosphors were decreased after coatings with In20:j and MgO in voltage range from 500 V to 5 kV. But the brightness of $Y_2SiO_5$:Ce phosphor was increased after coating of 5 0 2 . And also the aging test showed that $In_2O_3$ coating improved the life time of $Y_2SiO_5$:Ce phosphor.

The new green and red phosphors for PDP application activated by T $b^{3+}$ and E $u^{3+}$ were synthesized, and their photoluminance properties were investigated. It was found that the brightness of $Al_3$Gd $B_4$ $O_{12}$ :T $b^{3+}$ green phosphor under 147nm VUV irradiation was higher than that of commercial Z $n_2$ $SiO_4$:M $n^{2+}$ phosphor. But the emitting intensity of A1$_3$Gd $B_4$ $O^{12}$ :E $u^{3+}$ red phosphor was inferior to the commercial (Y,Gd)B $O_3$:E $u^{3+}$. $Al_3$Gd $B_4$ $O_{12}$ Phosphor had a strong excitation band at 160nm associated with the host absorption, and also the photoluminance excitation intensity of $Al_3$Gd $B_4$ $O_{12}$ :T $b^{3+}$ was higher than that of Z $n_2$ $SiO_4$:M $n^{2+}$, but the intensity of $Al_3$Gd $B_4$ $O_{12}$ :E $u^{3+}$ phosphor was smaller than (Y,Gd)B $O_3$:E $u^{3+}$ phosphor In the VUV range. C $e^{3+}$ co-doping in A1$_3$Gd $B_4$ $O^{12}$ :E $u^{3+}$ and substitution of $Al^{3+}$ by G $a^{3+}$ A1$_3$Gd $B_4$ $O^{12}$ :E $u^{3+}$ phosphor were tried, but they did not improved the optical property .d the optical property .ty .

There is currently considerable interest in the applications of conjugated polymers, oligomers and small molecules for thin-film electronic devices. Organic materials have potential advantages to be utilized as semiconductors in field effect transistor and light emitting didoes. In this study, Pentacene thin film transistors(TFTs) were fabricated on glass substrate. Aluminum and Gold wei\ulcorner used fur the gate and source/drain electrodes. Silicon dioxde was deposited as a gate insulator by PECVD and patterned by R.I.E. The semiconductor layer of pentacene was thermally evaporated in vaccum at a pressure of about 10$^{-8}$ Torr and a deposition rate 0.3$\AA$/sec. The fabricated devices exhibited the field-effect mobility as large as 0.07cm$^2$/Vs and on/off current ratio larger than 10$^{7}$

We dried emitting layer of EL device at 30, 80, I20 and $150^{\circ}C$ for Ihr to investigate the effects to the emission characteristics of devices. PL intensity of P3HT thin film decreased with increasing the drying temperature. But, the EL intensity and stability of device with emitting layer dried at $150^{\circ}C$ were the best. We think it s because of absence of water and remaining solvent in P3HT emitting layer. So, We suggest that the drying temperature of emitting layer of EL device should be select slightly low temperature than its glass transition temperature.

We fabricated white light-emitting diode which have a mixed single emitting layer containing poly(N-vinylcarbazole), trois(8-hydroxyquinoline)aluminum and poly(3-hexylthiophene) and investigated the emission properties of it. It is possible to obtain a blue light from poly(N-vinylcarbazole). green light from tris(8-hydroxyquinoline)aluminum and red light from poly(3-hexylthiophene). The fabricated device emits white light with slight orange light. We think that the energy transfer in a mixed layer occurred from PVK to Alq₃ and P3HT resulted in decreasing the blue light intensity from PVK. We find that the efficiency of the white light electroluminescent device can be improved by injecting electron more effectively and blue light need to improve the color purity of white light.

In this study, we used both displacement-current method and BAM(Brewster-Angle Microscope) to study on the molecular orientation of monolayer on the water surface. The displacement-current method measured behaviors of molecules by current and BAM was shown to be sensitive to film anisotropy even when the molecules were not tilted as long as the unit cell was anisotropic. Every transition was visible with BAM technique, either as a dramatic change in decree of contrast or as a sudden alteration of the mosaic domain texture.

Polyehtylene[PE] in polymer insulation materials of used power cable have carried out in abundance of experiment and study for electrical conduction, insulation breakdown, dielectric character and so on. when apply to field for power cable to make PE, application of DC withstand test to put in practice for inspection is get to effect accumulated space charge. In this paper, to make use of Pulsed Electro-Acoustic(PEA), It is analysis to take shape space charge under AC and DC, clear up the point at issue for DC withstand test impressing

To reduce the consumption of chemicals and ultra pure water(UPW) in cleaning process used in device manufacturing, we proposed wet processes that use electrolytic ionized water(EIW), which is generated by electrolysis of a diluted electrolyte solution or UPW and systemically investicate the EIW\`s characteristics. EIW\`s pH values are increased in cathode chamber and decreased in anode chamber according to the electrolysis time and its varied ratio is reduced with time increasement. The variation of pH and ORP is increased accordin to the applied voltage until critical voltage. But more than that voltage, the variation is decreased because of ion\`s scattering effect. When electrolyte is added, the effects of electrolysis is increased because electrolyte acts as catalyst. But when the density of electrolyte is increased more than critical value, ion\`s flowage is obstructed and the effects of electrolysis is decreased.

Metalization technology of the fine patterns by electroless plating is required in place of electrodeposition as high-density printed boards(PCR) become indispensable with the miniaturization of electronic components. Electroless nickel plating is a suitable diffusion barrier between conductor meta1s, such as Al and Cu and solder is essetional in electronic packaging in order to sustain a long period of service. Moreover, Electroless nickel has particular characteristics including non-magnetic property, amorphous structure. wear resistance, corrosion protection and thermal stability In this study fundamental aspects of electroless nickel deposition were studied with effort of complexeing agents of different kinds. Then the property of electroless deposit are controlled by the composition of the deposition solution the deposition condition such as temperature and pH value and so on. the characteristics of the deposits has been carried out.

Recently. high-density printed circuit boards(PCB) become indispensable with the minaturization of components. Nickel is deposited on the copper patterns and followed by the gold deposition for improving connection reliability between the printed circuit boards and electronic components. Conventionally electrodeposition has been applied to metalization of copper patterns. However metalization by this method is not applicable for the isolated fine and concentrated patterns. Therefore, metalization technology of the fine patterns by electroless plating is required in place of electrodeposition. The application of electroless nickel plating for interconnection with solder strongly relies on the solderability and the interactions between nickel and solder. Factors such as phosphorus content of the deposit additive and bath temperature may influence solderability of the electroless nickel deposit. So solderability of electroless nickel/ gold deposits was investigated with substrates plated changing the condition of nickel solution.

For replacing Li metal ai Lithium ton Bakery(LIB) system. we used carbon powder material which prepared by pyrolysis of phenol resin as starting material. It became amorphous carbon by pyrolysis through it\`s self condensation by thermal treatment. Amorphous carbon can be doped with Li intercalation and deintercalation because it has wide interlayer. however it has a problem with structural destroy causing weak carbon-carbon bond. So. we used ZnCl$_2$ as the pore-forming agent. This inorganic salt used together with the resin serves not only as the pore-forming agent to form open pores, which grow Into a three-dimensional network structure in the cured material, foul also as the microstructure-controlling agent to form a loose structure dope with bulky dopants. We analyzed SEM in order to find to different of structure. and can calculate distance of interlayer. CV test showed oxidation and reduction

In this study, we have fabricated amorphous FeZrBAg thin films with low core losses by using DC magnetron sputtering method. After deposition, rotational field annealing (RFA) method was performed in the dc field of 1.5 kOe. The amorphous FeZrBAg thin films produced by annealing at 35$0^{\circ}C$ was founded to have high permeability of 8680 at 100 MHz, 0.2 mOe, low coercivity of 0.86 Oe high magnetization of 1.5 T and very low core loss of 1.3 W/cc at 1 MHz, 0.IT respectively. Excellent soft magnetic properties in a amorphous FeZrBAg thin films in the present study are presumably the homogeneous formation of very fine bcc $\alpha$-Fe crystalline with the 8.2 nm in an amorphous FeZrBAg thin film matrix.

ZnO varistors have been widely used to protect power system and electronic system against overvoltages based on their excellent nonlinearity. In order to increase their protection capability, ZnO varistors are chosen by several electrical parameters according to their applications, namely 1mA DC voltage, 1eakage currents, impulse residual voltages, withstanding capability to impulse surge, and energy absorption capability. But these Parameters have scattering properties due to the nonuniformity of electrical characteristics. In this study, the effect of the microstructrual nonuniformity on the surge absorption capability of ZnO varistors.

This paper presents the results of multi-stress chamber experiments done to examine the tracking and erosion performance of polymer insulator. Multi-stress testing is able to demonstrate deficiencies of polymer insulator materials and designs, including the nature of interfaces in insulation design. Therefore, multi-stress testing is believed to a suitable test for evaluating the aging performance of polymer insulator designs. We have nvestigated IEC 61109 Annex C for estimating long time performance of polymer insulator.

The main objective of this paper is to design and test a new type of polymer ZnO surge arrester for DC power system of railroad vehicles. The rated voltage is 1500v direct current. The main research works are focused on structure design by finite element method, rat ing vol tape, temporary over vol tape and studies of character int ice of polymeric surge arrester .

This paper introduces the characteristice of leakage current flowing through surface of polluted composite insulation materials. For recording of aged Polymer insulations, data acquisition system(DAS) was developed. These materials were wetted in NaCl solution(each 0.1 wt%, 0.4 wt%). And we boiled them during 24 hours. We measured the leakage current and weight changing of them, each 5 hours. As a result of this experiment, we could know that the leakage current of acted insulation materials was increased by boiling time.