Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference (한국전기전자재료학회:학술대회논문집)

The Korean Institute of Electrical and Electronic Material Engineers (한국전기전자재료학회)
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The photoinduced anisotrophy(PA) by Ag polarized-photodoping in amorphous chalcogenide thin films

Ag 편광 광도핑에 의한 칼코게나이드 박막의 광유기 이방성(PA)

  • 장선주 (광운대학교 공대 전자재료공학과) ;
  • 여철호 (광운대학교 공대 전자재료공학과) ;
  • 박정일 (광운대학교 공대 전자재료공학과) ;
  • 정홍배 (광운대학교 공대 전자재료공학과) ;
  • 이천용 (포항공대 Terahertz Photonics 연구단)
  • Published : 1999.11.01
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Abstract

The chalcogenide glasses of thin films have superior property of the photoinduced anisotrophy(PA). In this study, we observed the phenomenon of Ag polarized photodoping using the irradiation with polarized He-Ne laser light, in the thin film of chalcogenide As/sub 40//Ge/sub 10//Se/sub 15//S/sub 35/ and the double-layer of Ag doped As/sub 40//Ge/sub 10//Se/sub 15//S/sub 35/. The Ag polarized photodoping result in reducing time of saturation anisotrophy and increasing sensitivity of linearly anisotrophy intensity, up to maximum 220%. In the thin films of chalcogenide, the Ag polarized photodoping will be show a capability of new method that suggested more improvement of photoinduced anisotrophy property

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