• Title/Summary/Keyword: 광유기 이방성

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Photoinduced anisotropy in the Ag and Cu photodoped chalcogenide As-Ge-Se-S thin films (칼코게나이드 As-Ge-Se-S 박막에서 Ag와 Cu 광도핑에 의한 광유기 이방성)

  • 박종화;장선주;박정일;이영종;정홍배
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2000.11a
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    • pp.535-538
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    • 2000
  • We have investigated the photoinduced anisotropy in chalcogenide $As_{40}Ge_{10}Se_{15}S_{35}$ thin films, non-doped and photodoped by Ag and Cu. The films were exposed by the linearly polarized He-Ne laser light( $\lambda$=632.8nm). The Ag and Cu photodoping resulted in reducing the time of saturation photoinduced linearly dichroism. Also photoinduced linearly dichroism was increased up to maximum 184% by Ag photodoping and 138% by Cu photodoping, respectively. As the result of this study, the linearly dichroism can be interesting for different applications of photoinduced anisotropy. In addition, it will offer lots of information for the photodoping mechanism and analysis of chalcogenide thin film.

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The photoinduced anisotropy(PA) by Ag polarized-photodoping in amorphous chalcogenide thin films (Ag 편광 광도핑에 의한 칼코게나이드 박막의 광유기 이방성(PA))

  • 장선주;여철호;박정일;정홍배
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.13 no.6
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    • pp.533-537
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    • 2000
  • It was known that chalcogenide glasses have the superior property of the photoinduced anisotropy(PA). In this study we observed the phenomenon of Ag polarized-photodoping in chalcogenide As$_{40}$ /Ge$_{10}$/Se$_{15}$ /S$_{35}$ and the double-layer of Ag doped As$_{40}$ /Ge$_{10}$/Se$_{15}$ /S$_{35}$ thin film using the irradiation with the polarized He-Ne laser light. The Ag polarized-photodoping results in reducing the time of saturation anisotorpy and increasing the sensitivity of linearly anisotropy intensity up to maximum 220% The Ag polrized-photodoping shows improvement of the photoinduced anisotropy property in polarized photodoping of the chalcogenide thin film. It will offer lots of information for the photodoping mechanism and analysis of chalcogenide thin film.in film.ilm.

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The photoinduced anisotrophy(PA) by Ag polarized-photodoping in amorphous chalcogenide thin films (Ag 편광 광도핑에 의한 칼코게나이드 박막의 광유기 이방성(PA))

  • 장선주;여철호;박정일;정홍배;이천용
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 1999.11a
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    • pp.574-577
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    • 1999
  • The chalcogenide glasses of thin films have superior property of the photoinduced anisotrophy(PA). In this study, we observed the phenomenon of Ag polarized photodoping using the irradiation with polarized He-Ne laser light, in the thin film of chalcogenide As/sub 40//Ge/sub 10//Se/sub 15//S/sub 35/ and the double-layer of Ag doped As/sub 40//Ge/sub 10//Se/sub 15//S/sub 35/. The Ag polarized photodoping result in reducing time of saturation anisotrophy and increasing sensitivity of linearly anisotrophy intensity, up to maximum 220%. In the thin films of chalcogenide, the Ag polarized photodoping will be show a capability of new method that suggested more improvement of photoinduced anisotrophy property

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Estimation of the Anisotropy Magnitude in Amorphous $As_40Ge_{10}S_{35}Se_{15}$ Thin Films by an Interference Method (간섭방법을 이용한 비정질 $As_40Ge_{10}S_{35}Se_{15}$ 박막에서의 광유기 이방성 크기 측정)

  • 전진영;박수호;이현용;정홍배
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.11 no.9
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    • pp.746-751
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    • 1998
  • There are several methods capable of determining he magnitude of optical anisotropy, such as spectrometric ellipsometry and polarized light reflectometry. The interference method is estimated to be no influence of surface scattering. The magnitude of anisotropy is a-As/sub 40/Ge/sub 10/S/sub 35/Se/sub 15/ thin film is analyzed by the reflection interference analysis method based on the difference depending on a phase of s- and p-polarized light. The theoretically analyzed value is compared with the result obtained by the measured technique.

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Characteristics of the photoinduced anisotropy(PA) in Ag/AsGeSeS multilayer thin films (Ag/AsGeSeS 다층박막의 광유기 이방성(PA) 특성)

  • Park, Jong-Hwa;Na, Sun-Woong;Yeo, Cheol-Ho;Park, Jeong-Il;Lee, Young-Jong;Chung, Hong-Bay
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2001.11b
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    • pp.362-365
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    • 2001
  • The chalcogenide glasses of thin films have the superior property of photoinduced anisotrophy(PA). In this study, we observed the linear dichroism(D) using the irradiation with polarized He-Ne laser light, in the $Ag/As_{40}Ge_{10}Se_{15}S_{35}$ multi-layer. Mutilayer structures formed by alternating metal(Ag) a chalcogenide$(As_{40}Ge_{10}Se_{15}S_{35})$. Such multilayer structures have a greater sensitivity to illumination am larger dichroism in comparison the conventional double layer structure. Also new phenomena are discovered. These results will be show a capability of new method that suggested more improvement of photoinduced anisotropy property.

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Polarization recording and reconstruction in the chalcogenide As-Ge-Se-S thin films (비정길 칼코게나이드 As-Ge-Se-S 박막에서 편광기록 재생)

  • 장선주;박종화;손철호;정홍배
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.13 no.9
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    • pp.781-785
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    • 2000
  • Chalcogenide glasses are suggested as a candidate for optical recording. In this study, we have investigated the holography recording and reconstruction of the polarization state in chalcogenide As$_{40}$ Ge$_{10}$Se$_{15}$ S$_{35}$ thin films. We have used a He-Ne laser light(633nm) to probe and record of the grating. Also the polarization state of object beam was modulated with a λ/4 wave plate. The polarization state of the +1st order diffracted beam was generated by readout of the grating with a linearly polarized reference beam. It was the same-handed polarization state as the polarization state of the recording beam. The result is shown that the diffraction efficiency of circularly polarized recording represents higher than other polarization state.ate.e.

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Polarization recording and reconstruction in the chalcogenide As-Ge-Se-S thin films (비정질 칼코게나이드 As-Ge-Se-S 박막에서 편광기록 및 재생)

  • 장선주;손철호;여철호;박정일;이영종;정홍배
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2000.07a
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    • pp.312-315
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    • 2000
  • In this study, we have investigated the holography recording and reconstruction of the polarization state in chalcogenide $A_{s40}Ge_{10}Se_{15}S_{35}4 thin films using a He-Ne laser light(633nm). The thickness of thin films is a 8677${\AA}$ and 9093${\AA}$. A He-Ne laser used to probe and record of the grating. Also the polarization state of object beam modulated with a $\lambda/4$ wave plate. The polarization state of the +lst order diffracted beam generated by readout of the grating with a linearly polarized reference beam. It was the same-handed polarization state as the polarization state of the recording beam. The diffraction efficiency of circularly polarized recording represented higher than other polarization state.

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Characteristics of the photoinduced anisotropy(PA) in Ag/AsGeSeS multilayer thin films (Ag/AsGeSeS 다층박막의 광유기 이방성(PA) 특성)

  • 박종화;나선웅;여철호;박정일;이영종;정홍배
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2001.11a
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    • pp.362-365
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    • 2001
  • The chalcogenide glasses of thin films have the superior property of photoinduced anisotrophy(PA). In this study, we observed the linear dichroism(D) using the irradiation with polarized He-Ne laser light, in the Ag/As$\sub$40/Ge$\sub$10/Se$\sub$15/S$\sub$35/ multi-layer. Mutilayer structures farmed by alternating metal(Ag) a chalcogenide(As$\sub$40/Ge$\sub$10/Se$\sub$15/S$\sub$35/). Such multilayer structures have a greater sensitivity to illumination and larger dichroism in comparison the conventional double layer structure. Also new phenomena are discovered. These results will be show a capability of new method that suggested more improvement of photoinduced anisotropy property.

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Polarization recording and reconstruction in the chalcogenide As-Ge-Se-S thin films. (비정질 칼코게나이드 As-Ge-Se-5 박막에서 편광기록 및 재생)

  • 장선주;손철호;여철호;박정일;이영종;정흥배
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2000.07a
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    • pp.820-823
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    • 2000
  • In this study, we have investigated the holography recording and reconstruction of the polarization state in chalcogenide $As_{40}$$Ge_{10}$$Se_{15}$$S_{35}$ thin films using a He-Ne laser light(633nm). The thickness of thin films is a 8677${\AA}$ and 9093${\AA}$. A He-Ne laser used to probe and record of the grating. Also the, polarization state of object beam modulated with a $\lambda/4$ wave plate. The polarization state of the +1st order diffracted beam generated by readout of the grating with a linearly polarized reference beam. It was the same-handed polarization state as the polarization state of the recording beam. The diffraction efficiency of circularly polarized recording represented higher than other polarization state.

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Measurement of the photoinduced Dichoism in Ag/AsGeSeS multilayer thin films (Ag/AsGeSeS 다층박막에서의 이색성 측정)

  • Shin, Kyung;Yeo, Cheol-Ho;Lee, Jung-Tae;Park, Jeong-Il;Lee, Young-Jong;Chung, Hong-Bay
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2002.04b
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    • pp.81-84
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    • 2002
  • The chalcogenide glasses of thin films have the superior property of photoinduced anisotrophy(PA). In this study, we observed the linear dichroism(D) using the irradiation with polarized He-Ne laser light, in the $Ag/As_{10}Ge_{10}Se_{15}S_{35}$ multi-layer. Mutilayer structures formed by alternating metal(Ag) and chalcogenide($As_{10}Ge_{10}Se_{15}S_{35}$). The Ag polarized photodoping result in reducing time of saturation anisotrophy and increasing sensitivity of linearly anisotrophy intensity, up to maximum 220%. In the thin films of chalcogenide, the Ag polarized photodoping will be show a capability of new method that suggested more improvement of photoinduced anisotrophy property.

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