Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference (한국전기전자재료학회:학술대회논문집)

The Korean Institute of Electrical and Electronic Material Engineers (한국전기전자재료학회)
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Electrical Properties of Nickel Polycide Gate

니켈 폴리사이드 게이트의 전기적 특성

  • 정연실 (수원대학교 전자재료공학과) ;
  • 김시중 (수원대학교 전자재료공학과) ;
  • 김주연 (수원대학교 전자재료공학과) ;
  • 배규식 (수원대학교 전자재료공학과)
  • Published : 1999.11.01
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Abstract

NiSi were formed from either Ni monolayer or Ni/Ti bilayer and the SADS method was applied to fabricated PMOSFET with Ni-polycide gate electrodes. PMOSFET made from Ni monolayer showed thermal stability unto 300~40$0^{\circ}C$ for 600sec., and excellent C-V characteristics for long time of drive-in anneal than PMOSFET made from Ni/Ti bilayer. This was attributed to easier decomposition and subsequent Ni diffusion to SiO$_2$ layer, probably due to the presence of Ti unreducing process

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