Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference (한국전기전자재료학회:학술대회논문집)

The Korean Institute of Electrical and Electronic Material Engineers (한국전기전자재료학회)
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Electrical characteristic of differential ternary chalcogenide thin films

칼코게나이드 3원계 박막에서의 전기적 특성에 관한 연구

  • Yang, Sung-Jun (Department of Electronic Materials Engineering, Kwangwoon University) ;
  • Shin, Kyung (Department of Electronic Materials Engineering, Kwangwoon University) ;
  • Lee, Jae-Min (Department of Electronic Materials Engineering, Kwangwoon University) ;
  • Chung, Hong-Bay (Department of Electronic Materials Engineering, Kwangwoon University)
  • 양성준 (광운대학교 전자재료공학과) ;
  • 신경 (광운대학교 전자재료공학과) ;
  • 이재민 (광운대학교 전자재료공학과) ;
  • 정홍배 (광운대학교 전자재료공학과)
  • Published : 2004.07.05
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Abstract

The phase transition between amorphous and crystalline states in chalcogenide semiconductor films can controlled by electric pulses or pulsed laser beam; hence some chalcogenide semiconductor films can be applied to electrically write/erase nonvolatile memory devices, where the low conductive amorphous state and the high conductive crystalline state are assigned to binary states. GeSbTe(GST), AsSbTe(AST), SeSbTe(SST) used to phase change materials by appling electrical pulses. Thickness of ternary chalcogenide thin films have about 100nm. Upper and lower electrode were made of Al. It is compared with I-V characteristics after impress the variable pulses.

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