Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference (한국전기전자재료학회:학술대회논문집)

The Korean Institute of Electrical and Electronic Material Engineers (한국전기전자재료학회)
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A Comparative Study of Gate Oxides Grown in $10%-N_2O$ and in Dry Oxygen on N-type 4H SiC

  • Cheong, Kuan-Yew (Power Semiconductor Research Group, Korea Electrotechnology Research Institute(KERI)) ;
  • Bahng, Wook (Power Semiconductor Research Group, Korea Electrotechnology Research Institute(KERI)) ;
  • Kim, Nam-Kyun (Power Semiconductor Research Group, Korea Electrotechnology Research Institute(KERI))
  • 청콴유 (한국전기연구원 전력반도체연구그룹) ;
  • 방욱 (한국전기연구원 전력반도체연구그룹) ;
  • 김남균 (한국전기연구원 전력반도체연구그룹)
  • Published : 2004.07.05
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Abstract

The electrical properties of gate oxides grown in two different processes, which are in 10% nitrous oxide($N_2O$) and in dry oxygen, have been experimentally investigated and compared. It has been observed that the $SiC-SiO_2$ interface-trap density(Dit) measured in nitrided gate oxide has been tremendously reduced, compared to the density obtained from gate oxide grown in dry oxygen. The beneficial effects of nitridation on gate oxides also have been demonstrated in the values of total near interface-trap density and of forward-bias breakdown field. The reasons of these improvements have been explained.

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