Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference (한국전기전자재료학회:학술대회논문집)
- 2004.07a
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- Pages.361-364
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- 2004
Electrical characteristics of the SOI RESURF LDMOSFET with step doped epi-layer
Step doping 농도를 가지는 SOI RESURF LDMOSFET의 전기적 특성 분석
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Kim, Hyoung-Woo
(Korea Electrotechnology Research Institute, Power Semiconductor Group) ;
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Seo, Kil-Soo
(Korea Electrotechnology Research Institute, Power Semiconductor Group) ;
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Kim, Ji-Hong
(Korea Electrotechnology Research Institute, Power Semiconductor Group) ;
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Kim, Nam-Kyun
(Korea Electrotechnology Research Institute, Power Semiconductor Group)
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김형우
(한국전기연구원 전력반도체연구그룹) ;
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서길수
(한국전기연구원 전력반도체연구그룹) ;
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김지홍
(한국전기연구원 전력반도체연구그룹) ;
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김남균
(한국전기연구원 전력반도체연구그룹)
- Published : 2004.07.05
Abstract
Surface doped SOI RESURF LDMOSFET with recessed source region is proposed to improve the on- and off-state characteristics. Surface region of the proposed LDMOS structure is doped like step. The characteristics of the proposed LDMOS is verified by two-dimensional process simulator ATHENA and device simulator ATLAS[1]. The numerically calculated on-resistance(