The Study on Characteristic of Phase Transition in differential Chalcogenide Thin Films

$Se_1Sb_2Te_2$ 칼코게나이드 박막의 두께에 따른 상변화 특성 연구

  • Lee, Jae-Min (Department of Electronic Materials Engineering, Kwangwoon University) ;
  • Yang, Sung-Jun (Department of Electronic Materials Engineering, Kwangwoon University) ;
  • Shin, Kyung (Department of Electronic Materials Engineering, Kwangwoon University) ;
  • Chung, Hong-Bay (Department of Electronic Materials Engineering, Kwangwoon University) ;
  • Kim, Young-Hae (Department of Electronic Engineering Induk College)
  • 이재민 (광운대학교 전자재료공학과) ;
  • 양성준 (광운대학교 전자재료공학과) ;
  • 신경 (광운대학교 전자재료공학과) ;
  • 정홍배 (광운대학교 전자재료공학과) ;
  • 김영해 (인덕대학교 전자과)
  • Published : 2004.07.05

Abstract

The phase transition between amorphous and crystalline states in chalcogenide semiconductor films can controlled by electric pulses or pulsed laser hem: hence some chalcogenide semiconductor films can be applied to electrically write/erase nonvolatile memory devices, where the low conductive amorphous state and the high conductive crystalline state are assigned to binary states. This letters researched into the characteristic of phase change transition in differential Chalcogenide thin films materials. The electrode used Al and experimented on 100nm, 300nm, 500nm respectively.