Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference (한국전기전자재료학회:학술대회논문집)
- 2004.07a
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- Pages.78-81
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- 2004
Adhesion and Electrical Performance by Roughness on Semiconductive-Insulation Interface Layer of Silicone Rubber
거칠기에 따른 반도전-절연 계면층에서 접착특성과 절연성능
- Lee, Ki-Taek (Inha University) ;
- Hwang, Sun-Mook (Inha University) ;
- Hong, Joo-Il (Inha University) ;
- Huh, Chang-Su (Inha University)
- Published : 2004.07.05
Abstract
In this paper, the effect of adhesion properties of semiconductive-insulating interface layer of silicone rubber on electrical properties was investigated. Surface structure and adhesion of semiconductive silicon rubber by surface asperity was obtained from SEM and T-peel test. In addition, ac breakdown test was carried out for elucidating the change of electrical property by roughness treatment. From the results, Adhesive strength of semiconductive-insulation interface was increased with surface asperity. Dielectric breakdown strength by surface asperity decreased than initial Specimen, but increased from Sand Paper #1200. According to the adhesional strength data unevenness and void formed on the silicone rubber interface expand the surface area and result in improvement of adhesion. Before treatment Sand Paper #1200, dielectric breakdown strength was decreased by unevenness and void which are causing to have electric field mitigation small. After the treatment, the effect of adhesion increased dielectric breakdown strength. It is found that ac dielectric breakdown strength was increased with improving the adhesion between the semiconductive and insulating interface.