We have studied the properties of $GaAs_{0.35}P_{0.65}$ epitaxial films on the GaP according to doping of $NH_3$ gas using VPE method by CVD. The efficiency of $GaAs_{0.35}P_{0.65}$ epitaxial films found to be greatly enhanced by the according of nitrogen doping. The diodes were fabricated by means of Zn diffusion into vapor grown $GaAs_{0.35}P_{0.65}$ epitaxial films doped with N and Te. The effects of nitrogen doping on carrier density of epitaxial films, PL wavelength and the power out, forward voltage of diodes are discussed. In the end, The effect of electrical and optical properties is influenced by the deep level and deep level density of nitrogen doping.

The characteristics of linear dichroism with temperature were investigated in normally($0^{\circ}$) and $80^{\circ}$-obliquely deposited amorphous $As_{40}Ge_{10}Se_{15}S_{35}$ thin films using low temperature equipment. The saturated dichroism($D_{sat}$) of a $80^{\circ}$-obliquely deposited film shows approximately 6% which is the larger value than 4.2 % of normally($0^{\circ}$) deposited film. The $D_{sat}$ of $80^{\circ}$-deposited film was increased to 25 % at 77 K, which is four times larger than that at room temperature. The $D_{sat}$ decreased with increasing temperature and was completely disappeared at about 335K. This could be explained as the tunneling effect due to the thermal excitation of lone-pair electrons in intimate valence alternation pairs(IVAPs) which are considered to be the origin of anisotropy. The decrease of $D_{sat}$ with increasing temperature from 77K to room temperature satisfied Gaussian approximation with a standard deviation of 158K.

In this study,$ 5{\times}5$ dot-matrix display was implemented with powder electroluminescent device (PELD). Generally PELD which have a luminance from powder phosphor with electric field, inserted phosphor and dielectric layer between electrodes is basic structure. To make high brightness PELD compared to conventional device, new type of PELD was proposed as follows. New PELD had only one layer, which was mixed phosphor (ZnS:Cu) and dielectric (BaTiO3) material appropriately between electrodes. To compare and estimate the conventional and new type of PELD, the EL spectrum, transferred charge density, brightness and decay time was measured. As above result, we fabricated a hish brightness $ 5{\times}5$ dot-matrix display with new type of PELD. Its brightness was 6400 $cd/m^2$ at 200 V, 400Hz.

In this study, we investigated the generation of pretilt angle for nematic liquid crystal (NLC) in a cell with oblique non-polarized ultraviolet (UV) light irradiation on polyimide (PI) surfaces. It was found that the monodomain alignment of the NLC is obtained with an angle of incidence of $70{\sim}85^{\circ}$ on PI surface. We consider that the monodomain alignment of NLC is attributed to anisotropic dispersion force due to photo-depolymerization of polymer on PI surfaces. Also, pretilt angle of NLC is generated about $3^{\circ}$ with an angle of incidence of $70{\sim}75^{\circ}$. It is considered that the pretilt angle generation in NLC is attributed to interaction between the LC molecules and the polymer surfaces.

In this paper, we obtained that the monodomain alignment of nematic liquid crystal (NLC) increases with increasing irradiation time with linearly polarized ultraviolet (LPUV) light irradiation on polyimide (PI) surfaces. It was found that the monodomain alignment of NLC is obtained in a cell with normally LPUV light irradiated on PI surface at 30 min. and then oblique LPUV is secondly irradiated on PI surfaces rotated by $90^{\circ}$. The pretilt angle of NLC is generated about $2.5^{\circ}$ with oblique angle of $60^{\circ}$ and then decreased with increasing the oblique angle of IN light irradiation. It is considered that the pretilt angle of NLC is attributed to the photo-depolymerization of polymer with the oblique angle of UV light. The voltage-transmittance and response time characteristics of photo-aligned twisted nematic (TN)-LCD with UV light irradiation time of 60 min. were almost same in comparison with rubbing treated TN-LCD.

$Cu(In_xGa_{1-x})Se_2$ thin films were prepared and characterized with various Ga contents. As the Ga content increased, the grain size of CIGS film became smaller. The 2 $\theta$ values in XRD patterns were shifted to larger values and the overlapped peaks were splitted. The energy bandgap increased from 1.04 to 1.67 eV and the resistivity decreased. The solar cell fabricated with ZnO/CdS/$Cu(In_{0.7}Ga_{0.3})Se_2/Mo$ structure yielded an efficeincy of 14.48% with an acitive area of 0.18 $cm^2$. The efficiency decreased with further increase of Ga content.

One of the main government department to enhance her capability of Science and Technology Capacity, MOST has done important role in Korea. Also the scale of resources they put in Science and Technology raises sharply and this trend will continue for years. The aim of this study is to investigate the technology research and the implementation of the MOST R&D.

전기설비설계에 직접 활용할 수 있고, 초보자도 쉽게 사용할 수 있는 위 제목의 프로그램을 개발하였다. 산업전기설비에서 케이블과 접지설계는 안전하고 신뢰성있는 전기설비의 사용을 보장해 주어야함과 동시에 경제적인 설계가 되어야 한다. 이러한 산업체의 요구에 따라 신뢰성이 있고 표준화된 설계가 되도륵 전산 프로그램화하였다. 케이블 사이즈의 선정방법은 기존의 수계산에 의한 방법을 토대로 부하용도별로 권장되는 케이블/전선의 종류와 사이즈를 자동으로 선정하여 허용전류, 전압강하 요건을 만족시키도록 하였으며, 접지계산은 접지 종류별로 허용기준치 범위의 저항을 유지하도록 적절한 접지도체의 사이즈를 결정하고 대지저항율에 따른 접지저항을 계산하여 현장에서 실측치와도 비교할 수 있도록 하였다. 개발된 프로그램은 기존 계산결과와 상호 비교하는 유용성과 정확성의 검증과정을 거쳤으며, 사용자가 쉽게 사용할 수 있도록 GUI화면으로 구성한 점이 특징이다. 출력자료는 사용자의 필요에 따라 다양하게 출력할 수 있어 전산화의 잇점을 최대한 살렸다.

The main faults at cable joint are mainly originate from double layered structure, which is composed of different kinds of materials such as XLPE/EPDM laminatest. In this paper, to investigate the effect of interfacial condition and coagents on dielectric strength of XLPE/EPDM, we prepared XLPE/grease/EPDM, XLPE/grease + coagent/EPDM laminates. Dielectric strength of the XLPE/EPDM laminates pasted with the grease compounded crosslinking coagent (TMPTA, TMPTMA) is higher than that of the laminates paseted with the grease without coagent.

In this paper, aging characteristics of silicone rubber used for outdoor insulation have been investigated with regards to sunlight effect. For this purpose, silicone rubbers were aged under the artificial sunlight by use of xenon arc lamp(1500W) and various tests were performed such as tracking, breakdown, contact angle, stress, strain. And then, in order to elucidate the changes of material, analysis have been followed as follows; FT-IR, SEM and EDS. Regarding the effect of the sunlight, it was obs that the surface of test samples are severely da with decreased hydrophobicity, tracking resistan breakdown strength.

The Co-Cr thin films are one of the most suitable candidates for perpendicular magnetic recording media. The facing targets sputtering(FTS) method has a advantage of preparing films over a wide range of working gas pressure on plasma-free substrates. In this study, we investigated the possibility of employing FTS system for depositing Co-Cr films, Co-Cr thin films were deposited with continuously sputter gas pressure ($P_{Ar}$ = 0.1 mTorr) by FTS method at temperature of $40^{\circ}C$. We find that the change of thickness and deposition rate of sputtered Co-Cr thin films affect crystal orientation and magnetic properties. Crystallographic and magnetic properties were evaluated by x-ray diffractometry(XRD) and vibrating sample magnetometer(VSM) respectively. It has been confirmed that the FTS method is very useful for preparing Co-Cr thin film recording media.

ZnO Varistor is an electronic ceramic device for controlling the surge voltage from low level to high. In this study, the puncture mechanism occurring in ZnO varistor is investigated, and the simulation for restraining the puncture by formulating the relation between the applied voltage and the increase of the inside temperature of grain is applied. In order to simulate the cause of the current localization which is the primary factor causing the puncture, the localization phenomenon and the temperature distribution induced by the localized current, the Voronoi network is applied, which can realize the structure of the practical varistor better than the established simple network. Using the current through each grain and the voltage applied to the grain boundary obtained from that simulation, the Joule heating energy is calculated and the phenomenon that the puncture occurs can be analyzed quantitatively by simulating the electric and thermal characteristics according to the externally applied pulsed voltage.

Vibration measurements to monitor the condition of machinery and machine elements offers several advantages over traditional methods of nondestructive evaluation. RIST(Research Institute of Industrial Science & Technology) has established a calibration system for accelerometers that measures within a frequency range from 2Hz to 6,300Hz and a temperature range from $-40^{\circ}C$ to $180^{\circ}C$. The calibration procedures are based on the principle of the comparison method. To monitor vibration signals of machinery and machine elements, annular shear type piezoelectric accelerometers employing solid state microelectronics were fabricated. The voltage sensitivity and resonant frequency of fabricated accelerometers was 83mV/g, 23kHz, respectively. This paper discusses the method of fabrication of annular shear type piezoelectric accelerometers and the results of field tests in POSCO(Pohang Iron & Steel Co. LTD.).

Three most dominant reactions are adsorption, movement, and desorption of $SiCl_2$ on silicon surface. $SiCl_2$ plays a key role in these dominant reactions. In this paper, surface reactions of $SiH_2Cl_2-H_2-HCl$ system are investigated and few dominant reactions were identified. An equation for Si net growth rate is derived from the analysis of these reactions and it is compared with experimental results of Bolem and Classen.

Power MOSFETs are very important Devices in power circuit applications such as motor control, switch mode power supplies & telecommunicatioelectronics. In order to investigated the Avalanch Energy value of MOSFET due to Misalign. Some samples made under several different $P^+$ misalign and $N^+$ misalign. The relationship between evalanch energy value and misalign is investigated as well in this paper.

Platinum thin films which hardly form volatile compounds with any reactive gas at normal process temperature was etched in Inductively Coupled Plasma (ICP) using Ar/HBr/$Cl_2$ gases. It is observed that the etch rate of platinum is reduced as increasing of HBr/$Cl_2$ gas mixing ratio when Ar gas ratio is fixed. However, we obtain good etching profile of platinum films without unwanted residues in 90% Ar/5% HBr/5% $Cl_2$ gas mixing ratio.

LB layers of L-$\alpha$-DLPC deposited by LB method were deposited onto n-type silicon wafer as Z-type film. Films made up of 8, 16 layers of lipid with long alkyl chain and the thickness of monolayer and multilayers was determined by ellipsometry. It was deposited Ag and Al onto LB layers and silicon wafer for electrode and small electrode exhibit high capacitance and low leakage current. The C-V curves of the MLS capacitor shows very high saturation value of capacitance. And cross-sectional SEM image of MLS capacitor indicated the presence of pore with Al electrode and we found that the Ag is good for electrode metal.

Residual resistance ratio ( RRR ) of Cu/Nb-Ti Superconductor wire was evaluated by fixed point method. Our measured value of RRR showed good consistency with the average value obtained from round robin test conducted by IEC/TC 90. Our test results showed that the coefficient of variation ( COV ) was kept within 2 %

In order to reduce or avoid oxidation problem at operation the interconnects in SOFCs have so far mostly been made of ceramic material. It has high chemical stability both under cathode and anode condition, relatively thermal expansion coefficient that matchs that of electrolyte material YSZ. But this material shown rather weak in the low oxygen atmosphere and thermal shock, and it has lower mechanical strength than alloys. To avoid these problems one may consider to use metals or alloys as materials for interconnects. Metallic interconnects are advantageous because of their high thermal and electronic conductivities. But it has some problems, Those are high thermal expansion and oxidation at high temperature in air. To solve these problems in the interconnection material in this study, $LaCrO_3$-dispersed Cr alloys for metallic interconnector of SOFC have been investigated as a fuction of $LaCrO_3$ content in the range of 5 to 25 vol.%. The Cr alloy were prepared by mixing Cr and $LaCrO_3$ powders in high-energy ball mill for 48h and by sintering under Ar atmosphere with 5vol.% $H_2$ for 10h at $1500^{\circ}C$. The alloys had a relative density of 95% and above. The Cr alloys in composed of two kind of small $LaCrO_3$ and large Cr particles. As the $LaCrO_3$ content increased, the Cr particle size decreased but the $LaCrO_3$ particle size remained contant. Also the oxidation tests show that the $LaCrO_3$-dispersed Cr is very resistant to oxidation in air. These results means that $LaCrO_3$-dispersed Cr is a useful material for metallic interconnect of planar SOFC.

Diamond like carbon(DLC) thin films possesed not only marvelous material charateristics such as large thermal conductivity, high hardness and being chemically inert, but also possesed negative electron affinity(NEA) properties. The NEA is an extremely desirable property of the material used in microelestronics and vacuum microelestronics device. DLC films were fabricated by pulsed laser deposition(PLD). The effect of the laser energy density and the substrate temperature on the properies of DLC films was investigated. The experiment was accomplished at temperatures in the range of room temperature to $400^{\circ}C$. The laser energy density was in the range of $6 J/cm^2$ to $16 J/cm^2$.

$Pb_{1-x}La_xTi_{1-x/4}O_3$ (PLT(x)) thin film has been regarded as one of the most promising materials for applications of sensor, optic devices, and memory devices, because it exhibits various properties as changing the amount of Lanthanum component. So we have prepared PLT thin films on platinized silicon (actually Pt/Ti/$SiO_2$/Si) substrates in oxygen ambient by laser ablation. Energy dispersive X-ray (EDX) revealed that the stoichiometric thin films were fabricated.

SOFC system is often subject to thermal cycle condition during normal start/stop, shutdown, and emergence state. Under the thermal cycle condition of heating and cooling, the SOFC components expand or shrink, which produces thermal stress and thermal shock. The SOFC performance is degraded by the thermal factors. To protect SOFC system from the thermal degradation, the optimum thermal condition must be clarified. In this study, to examine the thermal cycle characteristics, we fabricated single cells of planar SOFC with an area of $5{\times}5cm$. The electrolyte and PEN were tested under thermal cycle conditions in the range of$ 2-8^{\circ}C/min$. After thermal cycle test. crack creation of the components were examined using ultraviolet apparatus. No crack in the electrolyte and PEN were observed. The single cell system with alumina frame were also tested under thermal cycle conditions of 2, 3, $4^{\circ}C/min$. The single cell was fractured at the thermal cycle of 3 and $4^{\circ}C/min$ and the optimum condition of the thermal cycle to be found below $2^{\circ}C/min$.

We have investigated the effects of electrical stress on poly-Si TFTs with different hydrogen passivation conditions. The amounts of threshold voltage shift of hydrogen passivated poly-Si TFTs are much larger than those of as-fabricated devices both under the gate bias stressing and under the gate and drain bias stressing. Also, we have quantitatively analized the degradation phenomena using by analytical method. we have suggested that the electron trapping in the gate dielectric is the dominant degradation mechanism in only gate bias stressed poly-Si TFT while the creation of defects in the poly-Si is prevalent in gate and drain bias stressed device.

We have investigated the electrical characteristics of a MOSFET-structured silicon field emitter by employing Maxwell 2D and Silvaco simulators. The potential distribution is obtained by Maxwell 2D simulator and the field emission current is calculated by Fowler-Nordheim equations. The characteristics of MOSFET is simulated by Silvaco simulator. Simulated results are almost identical to the experimental results. Also, we have studied the emission characteristics as funtions of several geometric parameters.

We investigated drain leakage current in GaAs power MESFET. The device we studied by 20 simulation has a $1000{\AA}$ thick AlGaAs buffer layer under n-GaAs active layer. The calculation shows that the leakage current through GaAs substrate is significantly reduced by the buffer layer.

To drive motor or heating machine, it needs the electric power system like the apparatus of inverter. This electric power system obviously comprises power switching devices and drivers to run them. And this system has the topology comprised one/many arm(s), - each arm has high side switching device and low side switching device. Transformer, photocoupler, and HVIC having functions of isolation and level shift which are important thing to drive high side switching device are used as component of drivers in conventional apparatus. Piezoelectric transformers are proposed in this paper, and applied to drive high side swiching device. Through experiments, the possiblities of driving high side switching device are presented and the problems are mooted concurrently. But, we also consider a counterplan for solving the mooted trouble issues.

It is very important to select superior inter-layer PMD(Pre Metal Dielectric) materials which can act as penetration barrier to various impurities created by CMP processes. In this paper, hot carrier degradation and device characteristics were studied with material variation of PMD-1 layers, which were split by LP-TEOS, SR-Oxide, PE-Oxynitride, PE-Nitride, PE-TEOS films. It was observed that the oxynitride and nitride using plasma was greatly decreased in hot carrier effect in comparison with silicon oxide. Consequently, silicon oxide turned out to be a better PMD-1 material than PE-oxynitride and PE-nitride. Also, LP-TEOS film was the best PMD-1 material Among the silicon oxides.

Polycrystalline diamond films are deposited on a Si substrate by employing a 2.45 GHz $\mu$-wave plasma CVD system. Prior to depositing the diamond film, a DPR(diamond photo-resist) layer is coated to enhance the nucleation density. The growth rate of diamond films increases with the $\mu$-wave power and approaches to be about $1.5{\mu}m/hr$ at 1100 W. Structural properties of diamond films deposited are characterized from their SEM photographs, Raman spectra, and AFM surface images. Lager grain size, higher intensity of diamond peak, and smoother surface are observed for films deposited at a higher power. The possible mechanism on the diamond growth is also discussed to explain the experimental results.

Hydrogenated amorphous silicon(a-Si:H) films which were deposited by plasma enhanced chemical deposition(PECVD) have been recrystallized by the two-step rapid thermal annealing(RTA) employing the halogen lamp. The a-Si:H films evolve hydrogen explosively during the high temperature crystallzation step. In result, the recrystallized polycrystalline silicon(poly-Si) films have poor surface morphology. In order to avoid the hydrogen evolution, the films have undergone the dehydrogenation step prior to the crystallization step Before the RTA process, the active area of thin film transistors (TFT's) was patterned. The prepatterning of the a-Si:H active islands may reduce thermal damage to the glass substrate during the recrystallization. The computer generated simulation shows the heat propagation from the a-Si:H islands into the glass substrate. We have fabricated the poly-Si TFT's on the silicon wafers. The maximun ON/OFF current ratio of the device was over $10^5$.

The trench termination scheme is introduced for high voltage devices. The curvature of the depletion region at field limiting ring is critical factor to determine the breakdown voltage. The smooth curvature of the depletion junction alleviate the electric field crowding effect around this region. In the trench field limiting ring, the radius of the depletion region is smaller than conventional field limiting ring, but the distance between every trench is spaced small enough to punchthrough before initiation of local breakdown. The trench field limiting ring on silicon can ne formed by RIE followed by oxidation on side wall surface of the trench, and polysilicon filling. The combined termination of this trench floating field ring and field plate have been designed and analyzed. The breakdown simulation by 2-dimensional TCAD shows that the cylindrical junction breakdown voltage for substrate doping might be 99 percent of the ideal breakdwon voltage for substrate doping concentration of $3\times10^{14}cm^{-3}$ with about $100{\mu}m$ of lateral termination width.

The diamond-like carbon(DLC) film, as an antireflection layer, is coated on a commerically used Ge window. DLC films are deposited by using an rf(13.56 MHz) plasma CVD. The optimal value of thickness and refractive index of DLC layer has been determined from the computer simulation. IR-transmittances of DLC-coated Ge windows are estimated by measuring FTIR spectra in the wavelength range of$ 2.5{\sim}25{\mu}m$. By coating the DLC film on one side of the Ge window, the transmittance measured at a wavelength of $10{\mu}m$ is about 60 %, while that of the bare Ge is lower than 50 %. Also, a higher transmittance up to about 90 % is obtained by coating the DLC film on both sides of the window. It may be suggested that the further improvement of the IR-transmittance can be achieved by more precisely controlling the thickness and the refractive index of DLC layer and also by adopting various muliti-layer antireflection structures.

This work was carried out to develop a pattern on the nanometer scale using plasma polymerization and plasma etching. This study is also aimed at developing a resist for the nano process and a vacuum lithography process. The thin films of plasma polymerization were fabricated by the plasma polymerization of inter-electrode capacitively coupled gas flow system. After delineating the pattern at accelerating voltage of 30[kV], ranging the dose of $1-500[{\mu}C/cm^2$], the pattern was developed with dry type and formed by plasma etching.

Tungsten oxide($WO_3$) thin films were prepared by reactive magnetron sputtering in an $Ar/O_2$ atmosphere from a compressed powder $WO_3$ target and their electrochromic(EC) phenomena were investigated. PEO-$LiClO_4$-PC polymer electrolyte can easely be formed into thin films and showed high transmittance. Such electrolyte have electrochromic properties suitable for large-scale electrochromic devices. For the devices using $WO_3$ thin films of 1500, 2500, $4000{\AA}$ thickness with glass/ITO/$WO_3$/PEO-$LiClO_4$-PC/ITO/glass structure, an optical modulation of $50{\sim}60%$ were obtained at a potential range of $1{\sim}2V$. It has shown that transmittance and reflectance of light could be electrically controlled by low applied voltage.

Platinum-Cobalt alloy thin films were deposited on $Al_2O_3$ substrates by r.f. cosputtering for RTD temperature sensors. We made Pt-Co alloy resistance patterns on the $Al_2O_3$ substrates by lift-off method and investigated the physical and electrical characteristics of these films under various conditions (the input power, working vacuum, annealing temperature, thickness of thin films) and also after annealing these films. At input power of Pt : $4.4 W/cm^2$. Co:6.91W/$cm^2$. working vacuum of 10 mTorr and annealing conditions of $1000^{\circ}C$ and 60 min, the resistivity and sheet resistivity of Pt-Co thin films was $15{\mu}{\Omega}{\cdot}cm$ and $0.5{\Omega}/{\square}$, respectively. The TCR value of Pt-Co alloy thin films was measured with various thickness of thin films and annealing conditions. The optimum TCR value is gained under conditions $3000{\AA}$ of thin films thickness and $1000^{\circ}C$ of annealing temperature. These results indicate that Pt-Co alloy thin films have potentiality for the high resolution RTD temperature sensors.

$LiNbO_3$ transistor showed relatively stable characteristic, low interface trap density, and large remanent polarization. This paper reports ferroelectric $LiNbO_3$ thin films grown directly on p-type Si(100) substrates by 13.56 MHz rf magnetron sputtering system for FRAM applications. To take advantage of low temperature requirement for growing films, we deposited $LiNbO_3$ films lower than $300 ^{\circ}C$. RTA(Rapid Thermal Anneal) treatment was performed for as-deposited films in an oxygen atmosphere at $600^{\circ}C$ for 60 sec. We learned from X-ray diffraction that the RTA annealed films were changed from amorphous to poly-crystalline $LiNbO_3$ which exhibited (012), (015), and (022) orientations. The I-V characteristics of $LiNbO_3$ films before and after anneal treatment showed that RTA improved the leakage current of films. The leakage current density of films decreased from $10^{-5}$ to $10^{-7} A/cm^2$ at room temperature measurement. Breakdown electric field of the films exhibited higher than 500 kV/cm. The C-V curves showed the clockwise hysteresis represents ferroelectric switching characteristics. From C-V curves, we calculated dielectric constant of thin film $LiNbO_3$ as 27.5 which is close to that of bulk value.

TFT의 게이트 절연막으로 사용되는 절연체는 우수한 절연특성과 낮은 계면포획전하밀도($D_{it}$)를 요구한다. 이에 본 연구에서는 우수한 절연특성을 가지며, 격자상수가 Si과 유사한 $CaF_2$의 증착 특성을 연구하였다. 진공증착법을 이용하여 p형 Si(100) 기판위에 $CaF_2$의 기판온도, 두께를 변화시켜 전기적, 구조적 특성을 평가하였다. 또한 Si 기판에 방향에 따른 박막의 특성을 조사하였다. 구조적 특성분석으로부터 Si(100) 기판의 경우 $CaF_2$는 (200)방향으로 주도적인 성장을 하였으며 기판온도를 상승시킴에 따라 (220)방향으로도 성장을 하는 것으로 나타났다. 열처리 전후의 구조적 특성은 SEM을 통해서 확인 할 수 있었다. 열처리 전후의 특성 변화로부터 저온($100^{\circ}C$이하)에서는 기판과의 성장방향과 동일하였으며 고온($200^{\circ}C$이상)에서는 기판방향과는 다른 방향 성장 결과를 얻었다. 전기적 특성평가를 위하여 C-V 특성을 평가하였다. C-V 특성으로부터 Si(100) 기판의 온도가 $100^{\circ}C$, $1455\AA$ 두께로 증착한$CaF_2$ 박막의 $D_{it}$는 $1.8{\times}10^{11}cm^{-1}eV^{-1}$로 낮은 값을 가지 고 있었으며 0.1MV/cm에서 누설전류밀도가 $10^{-8}A/cm^2$ 이었다.

In this paper, organic thin film LED(light emitting diode) having ITO glass/$Alq_3$/Al structure using an $Alq_3$ was fabricated by the vacuum evaporation and the absorbance, wave length, 1-V characteristics were investigated. Electroluminescence of green and wavelength of 510[nm] were observed in this device. We observed absorbance form 320[nm] to 430[nm] and knew unstability of $Alq_3$ material as light emitting device.

Poly-Si grain boundaries act as potential barriers as well as recombination centers for the photo-generated carriers in solar cells. Thereby, grain boundaries of poly-Si are considered as a major source of the poly-Si cell efficiency was reduced This paper investigated grain boundary effect of poly-Si wafer prior to the solar cell fabrication. By comparing I-V characteristics inner grain, on and across the grain boundary, we were able to detect grain potentials. To reduce grain boundary effect we carried out pretreatment, $POCl_3$ gettering, and examined carrier lifetime. This paper focuses on resistivity variation effect due to grain boundary of poly-Si. The resistivity of the inner grain was $2.2{\Omega}-cm$, on the grain boundary$2.3{\Omega}-cm$, across the grain boundary $2.6{\Omega}-cm$. A measured resistivity varied depending on how many grains were included inside the four point probes. The resistivity increased as the number of grain boundaries increased. Our result can contribute to achieve high conversion efficiency of poly-Si solar cell by overcoming the grain boundary influence.

An active-matrix LCD using thin film transistors (TFT) has been widely recognized as having potential for high-quality color flat-panel displays. Pixel-Design Array Simulation Tool (PDAST) was used to profoundly understand the gate signal distortion and pixel charging capability, which are the most critical limiting factors for high-quality TFT-LCDs. Since PDAST can simulate the gate, data and pixel voltages of a certain pixel on TFT array at any time and at any location on an array, the effect of the resistivity of gate line material on the pixel operations can be effectively analyzed. The gate signal delay. pixel charging ratio, level-shift of the pixel voltage were simulated with varying the parameters. The information obtained from this study could be utilized to design the larger area and finer image quality panel.

To achieve the ULSI goals of higher density, greater performance and operation speed have been scaled down. However, the reduction of channel length cause undesirable problems such as drop of punchthrough voltage, hot-carrier degradation and high leakage current, etc.. It is shown that the device characteristics depend on process parameters. In this Paper, we catched hold of trends of hot-carrier effects and punchthrough voltages due to variation of some process parameters such as LDD doses(P), spacer lengths, channel doses($BF_2$) and $V_T$ adjusting channel implantation energies using design trend curve (DTC). As the LDD and channel doses increased, hot-carrier phenomena became more severe, and punchthrough voltage was decreased. It were represented that punchthrough and hot carrier effects were critically depend on LDD and channel doses.

Boron doped CdS films were prepared by CBD(Chemical Bath Deposition) method using boric acid ($B_3HO_3$) as donor dopant source, and their properties were investigated. As-grown CdS films were highly adherent and specularly reflective. Boron doped CdS film which was fabricated under the condition of 0.01 $B_3HO_3/Cd(Ac)_2$ mole ratio, exhibited the lowest resistivity of $2{\Omega}cm$ and the highest optical bandgap of 2.41eV. Also, CdS/CdTe solar cells were fabricated with various doping concentration of CdS films. Using optimized CdS film as the window layer of CdS/CdTe solar cell, the characteristics of the cell were improved. ( $V_{oc}$=610mV, $J_{sc}$=37.5mA/cm, FF=0.4, $\eta$=9.1% )

Electroluminescent(EL) devices based on organic materials have been of great interest due to their possible applications for large-area flat-panel displays. They are attractive because of their capability of multicolor emission, and low operation voltage. In this study, glass substrate/ITO/TPD/$Eu(TTA)_3(phen)/Alq_3/Al$ structures were fabricated by evaporation method, where aromatic diamine(TPD) were used as a hole transporting material, $Eu(TTA)_3(phen)$ as an emitting material, and tris(8-hydroxyquinoline)Aluminum ($Alq_3$) as an electron transporting layer. Electroluminescent(EL) and I-V characteristics of $Eu(TTA)_3(phen)$ with a variety thickness was investigated. This structure shows the red EL spectrum, which is almost the same as the PL spectrum of $Eu(TTA)_3(phen)$. I-V characteristics of this structure show that turn-on voltage was 9V and current density of $0.01A/cm^2$ at a dc drive voltage of 9V. Details on the explanation of electrical transport phenomena of these structures with I-V characteristics using the trapped-charge-limited current model will be discussed.

Blue light emitting electroluminescence(EL) diodes were fabricated utilizing Coronene and some organic materials. Coronene showed photoluminescence(PL) peak at 450nm in solution with high quantum efficiency. Multi layer system was applied to fabricate EL diode utilizing Coronene. The device showed didode-like applied voltage-current relationship. And blue light emitting was observed. The decay time of device was in a scale of some seconds. The trun-on voltage of device was about 9 V.

Powder electroluminescent device (PELD) structured conventionally dielectric and phosphor layer, between electrode and their layer fabricated by screen printing splaying or spin coating method. To promote performance of PELDs, we approached the experiments for different structure and thickness variation of PELD. Thickness variation($30{\mu}m{\sim}130{\mu}m$) was taken. To investigate electrical and optical properties of PELDs, EL spectrum, transferred charge density using Sawyer-Tower's circuit brightness was measured. Variation of structure in PELDs was as follows: WK-1 (ITO/BaTiO3/ZnS:Cu/Silver paste), WK-2 (ITO/BaTiO3/ZnS:Cu/BaTiO3/ZnS:Silver paste), WK-3 (ITO/BaTiO3/ZnS:Cu/BaTiO3/Silver paste), WK-4(ITO/BaTiO3+ZnS:Cu/Silver paste) As a result, structure of the highest brightness appeared WK-4 possessed 60 ${\mu}m$ thickness. The brightness was 2719 cd/$m^2$ at 100V, 400Hz.

Electroluminescence is occurred when phosphor is located in electric field. Object of this research show new type of powder electroluminescent device (PELD) for high brightness compared with conventional PELD. New type of PELD structured as follow ITO/phosphor + dielectric/Silver paste). To investigate optical properties of PELDs, EL spectrum, CIE coordinate system, Brightness of PELDs was measured. The suitable ratio between phosphor and dielectric in new type of PELD was 7:3(phosphor:dielectric). At 200 V 400 Hz, new type of PELD which had ratio of 7:3 was 5700 cd/$m^2$.

In this paper, we studied the electro-optical(EO) performance of photo-aligned twisted nematic(TN)-liquid crystal display(LCD) with oblique non-polarized ultraviolet (UV) light irradiation on polyimide (PI) surface. The monodomain alignment of photo-aligned TN-LCD is obtained with an angle of incidence of $85^{\circ}$ on PI surface. Also, we observed that the voltage transmittance and response time characteristics of photo-aligned TN-LCD is almost same compared to rubbing treated TN-LCD. Finally, we measured that the voltage-holding-ratio(VHR) of photo-aligned TN-LCD is almost same compared to rubbing treated TN-LCD.

In this paper, we investigated the monodomain alignment of nematic liquid crystal(NLC) in the cell fabricated by transcription alignment method on polyimide(PI) surface with side chain. The LC alignment produced by the transcription alignment method is attributed to a memory effect of the NLC on PI surfaces. We observed that the pretilt angle of NLC is generated about $3.7^{\circ}$ with transcription alignment on PI surface. Also, we obtained the good electro-optical(EO) performance of twisted nematic(TN)-liquid crystal display(LCD) by transcription alignment method on PI surface.

In this paper, we investigated the generation of pretilt for nematic liquid crystal (NLC) in a cell with linearly polarized ultraviolet (UV) light irradiation on polyimide (PI) surface. The pretilt angle of the NLC increases with increasing the incident angle in the cells with S-wave polarized UV light irradiation on PI surface. It is considered that the pretilt angle of the NLC increased due to decreasing the UV light intencity. We suggest that the pretilt angle of the NLC is attributed to asymmetry triangular of the polymer surface with S-wave polarized UV light irradiation on PI surface. Also, we consider that the asymmetry triangular of the Polymer not formed with P-wave polarized UV light irradiation on PI surface. Therefore, the pretilt angle of the NLC is attributed to asymmetry triangular of the polymer surface with UV light irradiation on PI surface.

In this paper, we studied the liquid crystal(LC) alignment and generation of pretilt angle in nematic (N) LC with oblique p-wave polarized ultraviolet (UV) light irradiation on the two kinds of the polyimide (PI) surface. The monodomain alignment of NLC is obtained with oblique p-wave polarized UV light irradiated on PI surface at 5$\sim$60min. We obtained that the pretilt angles of the NLC is generated about $2.1^{\circ}$ with angle of incidence of $30^{\circ}$ at 20min. Also, the pretilt angle of NLC decreases with increasing the imidization temperature on PI surface.

The physical properties of the LB films with merocyanine dyes have been published and attract attention due to the possibility of molecular structure control. The evaluation of the thin films was focused for the purpose of molecular structure control. The molecular structure in the case of the thin films with dyes can be examine by optical absorption spectra measurements. In the case of optical absorption spectra of the LB films by the heat treatment at $70^{\circ}C$ in the air, both of the shifted absorption bands decay and a monomer absorption peak of about 530 nm appears instead. And, the formation and dissociation of J-aggregates, anisotropic behavior was no longer observed in the heat treated merocyanine dyes LB films. In the results, study of the merocyanine dyes LB films using optical absorption spectra would an interesting problem of absorption peak shifts and mixed components.

The composition, weight decrease, DTA, and surface structure of vinyl insulated wire with thermal treatment conditions have been investigated. The composition of Cu by EDX analysis indicates Cu, Cl, and O lines, and oxidation reaction results from thermal treatment. Thermal treated IV and HIV appeared chemical reaction at $269^{\circ}C$ and $265^{\circ}C$, respectively. SEM of thermal treated Cu at $250^{\circ}C$ disappears an elongation structure, and appears an original structure.

The outdoor polymeric insulating materials such as silicone rubber, ethylene propylene diene monomer(EPDM), ethylene vinyl acetate(EVA) and epoxy are aged by various natural environment with the long-term performance in outdoor. In this paper, the effects of UV-ray on surface of silicone rubber were investigated by using the weather-Ometer. The accelerated aging stresses were simulated by UV radiation. high temperature and humidity as well as water spray. These the aging characteristics were examined through contact angle measurements, tracking resistance test, FT-IR and SEM/EDS analysis. the experimental results showed that tracking resistance decreases with increase in the UV-ray irradiation period. But the surface of silicone rubber kept hydrophobicity. It is found that the inorganic filler such as $Al(OH)_3$ improves tracking resistance and the $TiO_2$ is very effective in preventing degradation of silicone rubber surface from UV-ray.

It was investigated that space charge characteristics and Breakdown characteristics of XLPE/EPDM laminates as a function of interfacial condition. When the chemical A was pasted in laminate interface, there was little space charge in XLPE/EPDM interface and it was shown that breakdown strength of XLPE/EPDM laminate was influenced by laminate condition.

The purpose of this study is to find the way to prevent the electrostatics from the interface of liquid and solid by adding interface active substances to the insulating oil with concentration. As results, The streaming current, surface tension, and viscosity decreased and conductivity increased at the higher point than the c.m.c. which resulted from, the adding of the interface active substances.

This study deals with the aging effect of EPDM, to understand the surface hydrophobicity mechanism and electrical characteristics due to UV irradiation and salt fog. A mini chamber was fabricated for this test. The specimen was subjected a specific aging cycle. With the result of various analysis methods and investigation, we could make a advanced understanding to the aging mechanism, like as the relationships of the surface morphology and surface electrical characteristics.

In this paper, the physical and electrical conduction properties due to the electron beam irradiation for low density polyethylene using insulating materials of the distribution cable and ultra-high voltage cable are studied. In FTIR spectrum for physical properties, the strong absorptions by methyl groups in wavenumbers 720[$cm^{-l}$] and 1463[$cm^{-l}$] are observed, and the effect by residual carbonyl groups (C = 0) is hardly appeared. So, as a result of the electrical conduction properties, it is confirmed that the conduction current is increased nearly to 50[$^{\circ}C$], and is not changed until the crystalline melting point from the temperature over 60[$^{\circ}C$] because of the defects of morphology and the formation of many trap centers by means of electron beam irradiation.

Many kind of factors have influence on the electrical properties of polymer such as mechanical stress, impurity, additives, chemical blend, interfacial phenomena and so on. In this study, we lay emphasis on interfacial phenomena which is important part in insulating design of power cable. The electrical conduction characteristics of XLPE film are investigated as a function of different electrode materials in MIM Interfaces.

This paper deals with the surface aging and electrical characteristics of EPDM specimen with cooling and heating cycle. Then dielectric loss and weight loss are measered to evaluate electrical properties of EPDM on bulk and surface The specimens which underwent aging cycle over 600 hr reveal severe erosion on EPDM surface

The thermal history of XLPE insulated cable during heating cycle voltage test specified by IEC 840 was examined by DSC(differential scanning calorimetry) method, of which the principal is on the basis of the phenomenon that the crystals in polyethylene are rearranged as it is annealed near/below the melting temperature. From the result, it can be estimated that XLPE insulation near the conductor was exposed at the temperature of about $100^{\circ}C$ with the electrical stress through the test.

The polypropylene has been known to have higher melting temperature than polyethylene, and good mechanical properties. This paper introduces the experement result of dielectric breakdown properties to a polypropylene with a crystal structure. According to the experement, breakdown voltage is incresed when a thickness of thin film thinned. Spherulites of PP film prepared by annealing is larger than that of PE.

Influences of carbon black contents on the tracking resistance, tan $\delta$ and dielectric constant volume resistivity and dielectric strength of EPDM compounds before and after a exposure to UV radiation were investigated. Carbon black content up to 1.5 phr have a positive effect to improve the resistance to tracking and erosion, since carbon black diminish the leakage current. Results from the study reveal that both tan $\delta$ and dielectric constant volume resistivity and dielectric strength are unaffected by adding of carbon black up to 2.0 phr and carbon black have a significant effect to suppress the photo-degradation of EPDM compounds.

In this paper, the result of experimental investigation into the streaming electrification phenomena of insulating oil under an external dc field effect is described. Energization by positive dc voltage enhanced the streaming electrification. but when the applied voltage was negative, the polarity of streaming current was field strength dependent.

In this work, simultaneous measur of space charge and conduction current was c out in LDPE with air gap by Pulsed-Electro-Aco Method. Also, effect of long time charging at con electric field on the formation of space charge conduction was investigated. From the experim results. we knew that the homo space charge formed near the dielectric surfaces and moving the bulk of dielectric as the electric field elevated. This was related with the deep traps b carriers and de trapping by Poole-field lowering conduction current was coincident with the Pool emission. From the long time charging experimen obtained the results that the negative space was moving into the dielectric bulk as the cha continued and the positive space charge accumulated at upper surface of LDPE.

In this work, the effects of space charge was analyzed in removal efficiency of pollutant using dielectric barrier discharges. In order to investigate effects of space charge, two dielectrics(XLPE and TR-XLPE) was chosen which are different in space charge distribution. The simultaneously measurement of space charge and discharge current was carried out in XLPE and TR-XLPE with air gap by Pulsed-Electro-Acoustic Method in ac. Also, the removal efficiency is measured by classical ozone generator(von Siemens 1875). From the experimental results, we knew that the space charge distribution affects the discharge patterns. The more space charge is in surface, the quickly discharge initiates and the magnitude of discharge is increased when polarity changes. And these affect the removal efficiency of pollutant.

Direct writing of copper lines has been achieved by pyrolytic decomposition of copper formate films using a focused argon ion laser beam($\lambda$ =514.5nm) on a glass. The thickness and linewidth of the deposited copper films were considered as a function of laser power and scan speed. As the result from AES, there are no other elements except for copper after decomposition in the atmospheric ambient.

The c-axis orientation plays a very important role in controlling the main parameters of the perpendicular magnetic recording media, such as perepndicular magnetic anisotropy field $H_{K{\bot}}$, the ratio of coercive force $H_{C{\bot}}/H_{C//}$, the recording density $D_{50}$, and the dispersion of the c-axis orientation $\Delta\theta_{50}$, which is quite important for the performance as perpendicular recording media, as well as the magnetic properties of the film. In this study, the essential process requirement for preparing the Co-Cr films with the superior c-axis orientation, the dependence of $\Delta\theta_{50}$ and the magnetic properties on the film thickness $\delta$, and the effect of underlayer on the dispersion of c-axis orientation have been investigated for both the FTS and DCM system.

The chief advantage of polymer arrester, from a handling viewpoint, design of pressure relief, anti-contamination, electrical failuer was reduced by polymer arrester. The life expectancy of polymer arrester depend on a number of design factor. This paper introduced and study : new material housing (silicone composite, EPDM, EPA...), cap type sealing structure, knuckle type electrode, stress relief housing, supporting insulator and sub parts, of polymer arrester.

$Ba(Mg,Ta)O_3-Ba(Co,Nb)O_3$ ceramics were prepared by the conventional mixed oxide method. The ceramics were sintered at the temperature of 1500-$1575^{\circ}C$ for 5[hr.] in air. The crystal structure was investigated by the XRD. The microstructure of the ceramics were observed by SEM. The microwave properties of dielectric resonators were investigated as a function of composition and sintering temperature. $Ba(Mg,Ta)O_3-Ba(Co,Nb)O_3$ ceramics have a structure of complex perovskite type, and have peaks of (101),(102),(201),(202) and (212). In the case of the $0.7Ba(Mg,Ta)O_3-0.3Ba(Co,Nb)O_3$ ceramic resonator, dielectric constant, quality factor and temperature coefficient of resonant frequency(TCRF, ${\tau}_l$) were a good value of 26.5, 11.500 at 10[GHz] and -1.3[ppm/$^{\circ}C$] from $25^{\circ}C$ to $60^{\circ}C$, respectively.

The $(Sr_{1-x}Ca_x)TiO_3(SCT)$ thin films were deposited at various substrate temperature using rf magnetron sputtering method on optimized Pt-coated electrodes ($Pt/TiN/SiO_2/Si$). The dielectric constant changes almost linearly in the temperature region of $-80{\sim}+90[^{\circ}C]$, the temperature characteristics of the dielectric loss exhibited a stable value within 0.1. The capacitance characteristics appears a stable value within ${\pm}5$[%]. The drastic decrease of dielectric constant and increase of dielectric loss in SCT thin films is observed above 200[kHz]. Dielectric constant of SCT thin films deposited on Si wafer substrate are larger with the increase of deposition temperature.

This paper provides the results of analysis of lightening arrester failed in the field. XRD was used for qualitative analysis and SEM for microstructure analysis of zinc oxide (ZnO) block. The failure of lightening arrester might occur due to the following reasons: the uneven size of zinc oxide grains and cement layers. the re-crystallization of zinc oxide grains resulting from electrical stress around impurities, and the presence of too large pores($\simeq$ 50 ${\mu}m$).

Poly-Si TFT(Thin Film Transistor) is a electronic device that can be applied to the field of large area electronics such as AMLCD. We have fabricated the poly-Si TFT with lateral body terminal that is counter-doped body electrode and investigated the electrical characteristics of it. The lateral body terminal being short with s terminal, we have measured the transfer charac (Vg-ld) and the output characteristic (Vd-ld) fabricated devices. The measured result showe only that leakage current in OFF-state was re and Kink effect in ON-state was suppressed bu that in output characteristic curve the output Id was sustained constantly with the output v Vd in the saturation region.

We studied on the made structures of metal(Au)/L-$\alpha$ -DLPC/metal(Au), and we examined electron through L-$\alpha$-DLPC LB films by means of current - voltage(I-V) measurement.

Using a solution of polyamic acid salt obtained in combination with polyimide acid, we successfully prepared thermally stable multilayers(41, 35, 31 layers) films disilane-containing polyimide by Langmuir-Blodgett(LB) technique. We studied the electrically phenomena occurring at the metal(Au)/polyimide(Pl) LB film/metal(Au). Also, we then examined the of Pl LB films by means of current-voltage (I-V) and resistance measurement.

ZnO Varistor with composition of ZnO, $Bi_2O_3$, $Sb_2O_3$, CoO, NiO, $MnO_2$, $Cr_2O_3$, $Al_2O_3$ was fabricated by sintering methods. The purpose of this paper is to present certified voltage-current test data and a summary of electrical characteristics of the ZnO varistors.

In this paper, breakdown strength and time to breakdown are experimented under semiconducting layer/needle electrode in XLPE which is used for power cable insulator. Shape and scale parameters of obtained data are estimated using 2-parameters Weibull distribution. Life-time coefficient(n-value) using shape parameters for breakdown strength and time to breakdown tests is estimated. n-value of 1000 hour aged XLPE showed higher value than that of virgin XLPE. Increase of n-value is estimated by the stability due to removal of by-product and residue gas in XLPE by heating.

Inception and propagation of electrical tree and properties of partial discharge(PD) pulses accompanying with tree in low density polyethylene were discussed. We observed the characteristics of process of electrical tree by using optical microscope and investigated the statistical characteristics of the PD pulses by analyzing PD quantities and distribution patterns. The PD pulses were analyzed by q-n, $\phi$-n and $\phi$-q distribution. The statistical operators used were skewness(s), kurtosis(k) and average phase angle. The skewness and average discharge phase angle of PD pulses increased as the Propagation of tree. The kurtosis was about 1.8 at the Inception of tree, but It increased as the propagation of tree.

we have investigated the effect of aromatic compounds and tree inception and growth in low density polyethylene, for AC voltage and Impulse voltage. 2kinds of aromatic compounds are selected. Each additive (m-cresol, aniline) was mixed in low density polyethylene. For AC voltage, 10wt% $\sim$ 15wt% m-cresol can be shown to be the effective inhibitor to tree initiation. But, For Impulse voltage, 10wt% $\sim$ 15wt% aniline is effective inhibitor to tree initiation.

Recently, extending the local broadcasting and increasing lots of informations, the low-loss communication cable is required in proportion as frequency. The reason of transportation loss causes to using the high frequencies like hundreds of MHz or decades of GHz. For the low transportation loss, it is required the developing-technology of foaming and the high foamed insulator with the dielectric ratio of the nearest to 1. Therefore, there is the purpose of developing the insulating materials for the low dielectric ratio. Also it is important to measure the attenuation, which is one of the important parameters, as the evaluation of transportation characteristic with frequency in the communication cable. In this paper, the result showed that the dielectric ratio(1.4) of the nearest to 1 and low attenuation with high frequency were very related to the transportation and reflection characteristics such as propagation velocity(82.27%), delay time and voltage standing wave ratio(VSWR).

In this paper, thin films of PI were fabricated VDPM of dry processes which are easy to control the film's thickness and hard to pollute due to volatile solvents. From FT-lR, PAA thin films fabricated by VDP were changed to PI thin films by thermal curing. From SEM, AFM and Ellipsometer experimental, as the higher curing temperatures the films thickness decreases and reflectance increases. Therefore, Pl could be fabricated stable by increasing curing temperature. The relative permitivity and dissipation loss factor were 3.7 and 0.008. Also, the resistivity was about $1.05{\times}10^{15}{\Omega}cm$ at $30^{\circ}C$.

The methastable state diamond films have been deposited on Si substrates using MWPCVD. Effects of each experimental parameters of MWPCVD including $CH_4$ conentrations, Oxygen additions, Operating pressure, etc. on the growth rate and crystallinity were invesitigated. The best crystallinity of the film at 3% methane concentration addition of oxygen to the $CH_4-H_2O$ mixture gave an improved film crystallinity at 50% oxygen concentration. Upon increasing the operating pressure, the growth rate and crystallinity were increased simultaneously.

We have investigated the influence of Ti/Ba mole ratio in the characteristics of the modified $BaTiO_3$ systems with Ca addition. The specimens were fabricated with variations in Ti/Ba mole ratio between 0.995 and 1.01, and sintered in the temperature range between $1325^{\circ}C$ and $1375^{\circ}C$. When Ti/Ba mole ratio was 1.005 and sintering temperature was $1350^{\circ}C$, the breakdown voltage shows 260[V /mm].

The effects of lanthania on the microstructure and electrical characteristics of Pr-based ZnO varistors were investigated. The average grain size was increased in the range of 21.9$\sim$56.3${\mu}m$ with increasing lanthania content(0.0$\sim$2.0mol%). La was largely segregated at the grain boundary. As lanthania content increases, threshold voltage and nonlinear coefficient were decreased and leakage current was increased. In particular 2.0mol% lanthania-added varistor exhibited low threshold, voltage 17.0V/mm and nonlinear coefficient of around 6. Based on these results, this varistor can be said to be used as low-voltage varistor, if nonlinear coefficient is somewhat improved forward.

Thin film inductors of 10 mm ${\times}$ 10 mm with spiral pattern of 14 turns were fabricated by sputtering, photo-masking, and etching processes. Their impedence characteristics and annealing after effects were investigated. After magnetic annealing, the impedence characteristics of the inductors were improved at comparatively low frequencies, but the tendencies of it for thr frequency changes were almost same. These improvement was caused by the annihilation of the internal stresses of films, Uniaxial field annealed thin film inductor had an inductance of 1000 nH, resistance of 6 $\Omega$, and quality factor of 1 at 2 MHz.

Electro Discharge Machining (EDM) is a so-call nonconventional machining technique. This paper presents the experimental results of an EDM technique for the fabircation of microholes on #7440 pyrex glass substrates. With various applied voltages and various concentration of NaOH or KOH solution, the glass substrates have been microdrilled using the copper electrodes of which diameters are 250 ${\mu}m$ to 450 ${\mu}m$. The machined throughholes have been observed the top diameter, the bottom diameter and machining time have been measured. EDM in NaOH solution causes the fabrication to have better the surface condition, higher selective of electrode, lower concentration of solution with respect to EDM in KOH solution machined fabrication.

Stearic acid was deposited on surface of 9[MHz], AT-cut quartz crystal microbalance as gas sensing material using Langmuir-Blodgett(LB) technique. We measured gas response between deposited LB films and organic gas for various temperature($0{\sim}80^{\circ}C$). The resonant frequency changed due to absorbance of organic gas such as methanol and butanol gas at room temperature. However, the resonant frequency not responded to methanol gas at temperature above melting point of deposited LB films.

Stearic acid LB films was deposited by LB technique. The deposition status of LB films were verified by UV absorbance which was increased in proportion to the number of layers. And, I-V characteristics were measured to investigate the response properties between LB films and organic gases using the distance of electrodes. The current was increased with the applied voltage but decreased as increasing the distance of electrodes. The conductivity of stearic acid LB films using the distance of electrodes was $10^{-8}$[S/cm], which corresponds to that of the semiconductor.

Recent development of scanning probe microscope techniques has made it possible to investigate, not only microscopic surface topography, but also physical and chemical properties on the nanometer-scale. The scanning Maxwell-stress microscopy (SMM) is surface characterization tool capable of mapping both the surface topography and electrical properties, such as surface potential, surface charge dielectric constant of thin films with a nanometer-scale resolution by means of the AC voltage driven oscillation of metal coated cantilever. In this study, we observed the surface potential distribution and molecular ordering in thin films. We have demonstrated that the SMM can be used for imaging surface potential distribution over the film surface and also be used for detecting surface changes in thin films. This is first step towards the understanding of electrical phenomena in organic and inorganic materials, biological system with SMM.

The purpose of this study is to research and develop PEO/PVDF electrolytes and $LiMn_2O_4$ composite cathode for all-solid state lithium rechargeable battery. We investigated AC impedance response and charge/discharge cycling of $LiMn_2O_4$/SPE/Li cells. The cell resistance was decreased so much initial charge process from 0% SOC to 100% SOC. The radius of semicircle of $LiMn_2O_4$/SPE/Li cell was so much from initial state to 20th cycling. The discharge capacity of the $LiMn_2O_4$ composite cathode was 144mAh/g based on $LiMn_2O_4$.

Diamond thin films were deposited on n-type (100) Si wafers from $H_2-CH_4$ gas mixture by rf PACVD. Prior to deposition, mechanical scratching was done to improve density of nucleation sites with diamond paste of 3${\mu}m$. The microstructure of deposited diamond thin films was studied by using the following conditions : discharge power of 500W, $H_2$ flow rate of 50sccm, reaction pressure of 20torr, and $CH_4/H_2$ ratio of 0.3$\sim$1%. The deposited diamond thin films showed that the crystallite was increased at the lower methane concentration. The deposited thin films were characterized by Scanning Electron Microscopy. Raman Spectroscopy and Fourier-Transform Infrared Spectroscopy.

$YBa_2Cu_3O_x$(Yl23) Superconducting thick films on $Y_2BaCuO_5$(Y211) substrate were Prepared by surface diffusion process between $BaCuO_2$+CuO composite coating powder and a Y2ll substrate. X-ray diffraction shows that the Yl23 layer onto Y2ll substrate is the orthorhombic crystal structure. The specimen heated at $940^{\circ}C$ for 2h showed the maximum $J_c$ fo 500A/$cm^2$. Based on optimal condition, the superconducting fault current limiter(FCL) having a current limiting area 1mm wide and 66mm long was fabricated on Y211 substrate. A typical current limiting waveform was measured. When a voltage of 3V was applied, the fault current with a peak of 15A was limited to about 0.11A.

A Gapless HST(high speed train) arrester design is not possible without the highly non-linear ZnO(ZincOxide) varistors. Zno varistors combine excellent protective characteristics with steady state performance to maximize protection, the ZnO varistors are selected for each unit based on leakage current and residual voltage, to verify that the residual voltage is the residual voltage published for HST arrester.

Experimental results on the effect of $SiO_2$ addition to Bi based ZnO varistor show that secondary phases in microstructure and nonlinear coefficient are increased, and that leakage current is decreased with $SiO_2$ additive content. The varistor with 0.1 mol%-$SiO_2$ additive exhibits lower resistive current than other specimen at ($E_{1mA}$ x 0.6) applied voltage and temperature of $115^{\circ}C$ for 350h.

The line-fuse which one of device most widely used in distributed line system has a ability to cut off the fault current flow into the house. But this device can be used only one time. So there are many waste of human power and money to exchange acted line-fuse. In this paper, we designed new type of line-fuse melting zone using by different union metal, so line-fuse can be reused after once operated.

In this work, a possible new PD detection technique, based on the Michelson Interferometer, has been proposed. Laser beam transmitted by optical fiber is spliced into two-laser beam by 50/50 coupler, one is reflected on diaphragm, which is vibrated by ultrasonic sound, and then modulated. The other one is reference beam. They are collected into 50/50 coupler making interferenced beam which could be detected by photo detector.

In this paper, the characteristics of the shielded inductive superconducting fault current limiter was designed and simulated. Parameters of design for superconducting tube, core and primary coil were first determined. And then according to the system characteristics such as load resistance, fault angle and source voltage, the simple power system composed of shielded inductive FCL was simulated by computer-aided numerical analysis. The flowing currents under the fault condition can be limited to about 10 A.

We designed and fabricated plate-type linear ultrasonic motor. It used multi-vibration mode, 1st Longitudinal and 4th Bending mode. To analyze vibration mode and find maximum displacement point, we simulated using FEM(Finite Element Method). The plate-type linear ultrasonic motor was fabricated by the simulation results. Also, to confirm application to card-forwarding device, frequency and load characteristics were measured. Its resonance frequency was 49.6 kHz, and its maximum speed was about 0.6m/s when no load. Also, its maximum efficiency was 1.2 % and in that time, speed and torque was 0.3 m/s and 0.7 mNm, respectively.

In this study, 3-D underwater object restoration using ultrasonic transducer fabricated with PZT-Polymer 1-3 type composite are presented. Using the acquired underwater object data 16${\times}$16 pixels. Modified SCL neural networks using the 16${\times}$16 low resolution image was used for underwater object restoration of 32${\times}$32 high resolution Image.

This paper presents the deposition and anneling characteristics of Cr thin film strain gaugs, which were deposited on glass by DC magnetron sputtring. The optimzed deposition conditions of Cr thin films were the input DC power, 7 W/$cm^2$ and the Ar vacuuming pressure, 9 mTorr, GF, TCR and TCS of Cr thin film strain gauges were 5.86, 400 ppm/$^{\circ}C$ and $\approx$0 ppm/$^{\circ}C$ respectively. The anneling conditions were investigated with the thinkness rang (1200 $\sim$ 3500$\AA$) of Cr thin films, anneling temperature (100 $\sim$ $300^{\circ}C$) and anneling time (24 $\sim$ 72hr). The maximum resistivity and the minimum TCR value were 1757.03 ${\mu}{\Omega}$cm, -194.07 ppm/$^{\circ}C$, respectively.

In order to develop PAFC stack technology using 2.000$cm^3$ electrode-matrix, 10kW stack consisted of 63 single cell was fabricated and operated. The operation installation, and control and data acquision system for the 10kW PAFC stack were designed and equipped. The stack showed the performance of 10kW (275A at 36.5V) and uniform distribution of temperature and voltage between the cells.

Dual mode ring resonators(DMRR) have been fabricated using laser ablated $YBa_2Cu_3O_{7-x}$ superconducting thin films. The transition temperature of YBCO thin films were 85 - 88 K and the film thicknesses were about 5,000 $\AA$. Dual mode ring resonators were patterned by standard photolithography process and wet-etching. Then two-layer metal thin films (Ti/Ag) have been deposited for the ground plane on the back side of substrate by e-beam and thermal evaporation. The input/output feedline angles of each resonator were $60^{\circ}$, $100^{\circ}$, $180^{\circ}$. A network analyzer was used for testing the performance of the resonators in the frequency range of 6-13 GHz at 77 K.

We have designed and developed narrow bandpass multipole filters for satellite communication using $YBa_2Cu_3O_{7-x}$(YBCO) thin films on MgO substrates. The superconducting film used in this study was prepared by laser ablation on one side polished MgO (100) substrates. A Nd:YAG laser was used to fabricate YBCO thin films. The wave length of the laser was 355 nm. The laser beam was focused onto a YBCO target rotating linearly to avoid deep craters that may eject macroscopic YBCO particles. The YBCO films were grown at $750^{\circ}C$ in the oxygen partial pressure of 200 mTorr. The deposited YBCO thin films were patterned by conventional wet-etching method. The transition temperatures of YBCO thin films were 85 - 88 K and the film thicknesses were about 5,000 $\AA$. By comparing the performances of normal-metal filters and YBCO filters, we observed that superconducting YBCO multipole filters have been showed superior performances at 77 K.

TEC(Thermoelectric conversion) is direct conversion method between thermal energy and electric energy. We studied on the mechanical, electrical and thermal properties of thermoelectric module, made experimental thermoelectric generator with BiTe material and manufactured module tester for electric-thermal energy conversion.

In order to investigate the core material for over-head transmission line with non-magnetic and high strength nitrogen steel, microstructure and several basic properties of Fe-Mn-Cr-Ni-N steel have been studied. It is necessary that core material have a $\gamma$ phase to have a non-magnetic characteristics. To acquire a $\gamma$ phase, Mn, Ni and C are added as a alloying element. It was found that Fe-25Mn-16Cr-1Ni-N alloy have a stable $\gamma$ phase. The precipitate from this alloy system was $(Cr, Fe)_7C_3$. High Mn and N steel satisfies Sievert's relation that solubility of nitrogen increases with the square root of partial pressure of gas in metal-gas system and the hardness have proportional relation with nitrogen concentration.

Macroporous silicon diaphragms 20 to $200{\mu}m$ thick have been formed on p-type silicon by anistropic etching in TMAH solution and then by electrochemical etching in HF-ethanol-water solution with an applied current. The pores have a pore diameter of $1.5{\sim}2{\mu}m$, with a depth of $20{\sim}30{\mu}m$ and are not interconnected, which are in sharp contrast to the porous silicon reported previouly for similarly doped p-Si. The fabrication of macroporous silicon and free-standing diaphragms is expected to offer new applications for microsensors, micro-machining, and separators.

A capacitive humidity sensor is used as a test device to characterize the performance of iodine doped polyphenylacetylene(PPA) thin films in relative humidity sensing application In comparison with undoped PPA thin films. the iodine doped PPA films showed higher sensitivity(0.19pF/%RH), better linearity(4.2%FS), much lower hysteresis and lower temperature coefficients(0.043 $\sim$ 0.067pF/$^{\circ}C$) over a wide range of relative humidity.

This paper presents a smart thin film pressure transducer which is highly suitable for a precise and remote measurement of pressure and has the following smart functions: automatic zero tracking, automatic span adjustment, temperature compensation, continuous self-diagnostics for faults(open strain gages, abnormal data, incorrect A/D conversion, and overpressure), data memory and multi-drop communication with PC.

This paper described design and simulation of the high-Tc superconducting (HTS) microstrip bandpass filter (BPF) on MgO substrate using $Y_1Ba_2Cu_3O_{7-x}$ films that show superconductivity ${at \fallingdotseq}90$ K. Design parameters for the characteristic of the bandpass filter in Ku-band were obtained by approximate design formulas. It used parallel coupled stripline stepped impedance resonators (SIR). Microwave design system, MDS(EEsorf S/W) was used to derive the optimal pattern of the filters and to simulate frequency response. In computer-aided results, optimally designed HTS filters got good performance compared with the gold counter-parts on frequency response $S_{21}$, $S_{11}$.