The $(Sr_{0.85}Ca_{0.15})TiO_3$(SCT) thin films are deposited on Pt-coated electrode$(Pt/TiO_2/SiO_2/Si)$ using RF sputtering method. Ag, Cu, Al, Pt films for the formation of top eletrode were doposited on SCT thin films by thermal evaporator and sputtering. The effects of top electodes have be studied on SCT samples with a variety of top electrode materials.

We have grown vertically aligned carbon nanotubes in a large area of Co-Ni codeposited Si substrates by the thermal CVD using $C_2H_2$ gas. Since the discovery of carbon nanotubes, Synthesis of carbon nanotubes for mass production has been achieved by several methods such as laser vaporization arc discharge, and pyrolysis. In particular, growth of vertically aligned nanotubes is of technological importance for applications to FED. Recently, vertically aligned carbon nanotubes have been grown on glass by PECVD Aligned carbon nanotubes can be also grown on mesoporous silica and Fe patterned porous silicon using CVD. Despite such breakthroughs in the growth, the growth mechanism of the alignment are still far from being clearly understood. Furthermore, FED has not been clearly demonstrated yet at a practical level. Here, we demonstrate that carbon nanotubes can be vertically aligned on catalyzed Si substrate when the domain density reaches a certain value. We suggest that steric hindrance between nanotubes at an initial stage of the growth forces nanotubes to align vertically and then nanotubes are further grown by the cap growth mechanism.

스퍼터 퇴적 $WO_3$ 박막에 대해 열처리에 따른 전기적특성 및 구조적특성을 각각 4탐침법 및 AFM 관측에 의해 조사해 보고, 또한 스퍼터링시의 산소가스 유량비에 따른 $WO_3$ 박막의 막질을 ESCA에 의해 평가하였다 실험 결과 열처리에 의해 $WO_3$ 박막 표면의 평균거칠기가 $2.45\AA$에서 $152\AA$으로 크게 증가함을 알 수 있었다 또한 스퍼터시 산소유량비에 따른 효과를 ESCA로 관측한 결과, 열처리전에는 주피크가 34eV에서 나타남에 비해 열처리 후에는 36eV전후에서 나타났다.

In order to investigate the properties of diamond-like carbon(DLC) thin films depending on the deposition parameters, DLC thin films were systematically fabricated by pulsed laser deposition (PLD), DLC thin films have been shown advantageous field emission properties due to a negative electron affinity (NEA) and a low work function. At the atomic level. DLC is referred to the group of carbon materials with strong chemical bonding composition of $sp^2$ and $sp^3$ arrangements of atoms incorporated with an amorphous structure. The experiment was performed at substrate temperature in the range of room temperature to $600^{\circ}C$. The laser energy densiy was used to be in the range of $6J/cm^2$ to $20J/cm^2$, SEM, Raman, PL, XPS and field emission characteristics were used to investigate the DLC thin films.

This paper covers our efforts to improve the low carrier mobility and light instability of hydrogenated amorphous silicon (a-Si:H) films with microcrystalline silicon $({\mu}c-Si)$ films. We successfully prepared ${\mu}c-Si$ films on $CaF_2$/glass substrate by decomposition of $SiH_4$ in RPCVD system. The $CaF_2$ films on glass served as a seed layer for ${\mu}c-Si$ film growth. The XRD analysis on $CaF_2$/glass illustrated a (111) preferred $CaF_2$ grains with the lattice mismatch less than 5 % of Si. We achieved ${\mu}c-Si$ films with a crystalline volume fraction of 61 %, (111) and (220) crystal orientations. grain size of $706\AA$, activation energy of 0.49 eV, and Photo/dark conductivity ratio of 124. By using a $CaF_2$/glass structure. we were able to achieve an improved ${\mu}c-Si$ films at a low substrate temperature of $300^{\circ}C$.

FED용 형광체로 사용되는 $ZnGa_2O_4$를 Glycine Nitrate Process로 합성하여 고상 반응법으로 합성한 $ZnGa_2O_4$ 분말과 비교 분석하였다. 또한 Glycine Nitrate Process로 제조시 Mn의 doping 농도를 변화시키면서 각각의 조성비에 따른 발광특성을 알아보았다. TGA 측정 결과 GNP법으로 합성된 $ZnGa_2O_4$의 경우약 $300^{\circ}C$이상에서 무게감량이 없으며, XRD 상분석 결과 연소반응 후 이미 상형성이 이루어짐을 알 수 있었다. PL측정을 결과 GP(Glycine Nitrate Process)로 제조된 $ZnGa_2O_4$ 분말의 발광효율이 고상 반응법으로 제조된 분말보다 우수하였으며, 균일하고 비표면적이 큰 단일상임이 관찰되었고, 더 작은 에너지와 시간으로 제조할 수 있는 장점이 있었다.

저 전압용 형광체는 최근에 활발히 연구가 진행되고 있으며 가장 대표적인 형광체가 ZnO : Zn 녹색 형광체이다. ZnO : Zn 형광체는 자체발광형 형광체로써 ZnO을 환원분위기 하에서 열처리를 함으로써 얻을 수 있다. 본 연구에서는 자발착화 연소반응법(Glycine Nitrate Process)을 이용하여 ZnO : Zn 분말을 합성하고 형광특성 및 분말특성을 알아보았다. 출발물질로는 Zn Nitrate와 Glycine을 이용하였고 자발연소 반응이 발생하는데 적절한 글리신의 양을 확인하기 위해서 글리신과 양이온의 비를 변화시키며 ZnO를 합성하였다. 그리고 Zn Excess가 생겨난 양과 그에 따른 형광특성을 관찰하기 위해 $N_2$ 분위기에서 각기 $500^{\circ}C,\;750^{\circ}C,\;950^{\circ}C$의 온도에서 열처리를 행하였다. 제조된 ZnO 분말의 입자형태와 결정상태는 SEM과 XRD를 이용하여 분석하였고 TG-DTA를 측정하여 열처리 온도에 따른 질량감소(ZR excess)를 관찰하였다. 또 Particle size analyzer로 분말의 크기를 알아보았고 형광체로써의 발광특성을 살펴보기 위해 PL을 이용하여 발광피크를 관찰하였다.

ZnO is a wide-bandgap II-VI semiconductor and has a variety of potential application. ZnO exhibits good piezoelectric, photoelectric and optic properties, and is good for a electroluminescence device. ZnO films have been deposited at (0001) shappire by PLD technique. Chamber was evacuated by turbomolecular pump to a base pressure of $1{\times}10^{-6}$ Torr Nd:YAG pulsed laser was operated at ${\lambda}=355nm$. The ZnO films were deposited at oxygen pressures from base to 500 mTorr. The substrate temperatures was increased from $200^{\circ}C$ to $700^{\circ}C$. At aleady works, UV emission and green-yellow PL was observed. In this work, ZnO films showed UV, violet, green and yellow emissions. UV emission was enhanced by increasing partial oxygen pressure. We investigated relationship between partial oxygen pressure and UV emission.

In this papaer, 7-segment was implemented using AC powder EL. ZnS:Cu and $BaTiO_3$ was used as a phosphor and dielectric respectively. The preparation of phosphor and dielectic layer was performed with screen printing. The implemented system of 7-segment was divided as following; EL display. driving circuit. software for driving. The properties of fabricated devices was measured with EL spectrum. brightness and J-V.

The main functions of AC railroad vehicles arresters is to protect the main transformer from lightening impulse or switching impulse surge, then the MOV(metal oxide varistor) elements rated of 10kA is applied. The residual voltage and surge energy absorption are important parameters in designing arrester, these must be carefully decided with considering protecting level of impulse environment of system. The purpose of this study is to discuss the residual voltages and the energy absorption capability by impulse currents on MOV elements for railroad vehicles, and to introduce design factors which act as optimal protecting condition against impulse currents.

Electrical treeing phenomenon, regarded as pre-breakdown which accelerates aging process leading an insulation to the complete breakdown, is with no doubt extremely fatal to the performance of the insulation. Investigated in this paper is electrical treeing representing local dielectric failure according to flow pattern, the flow history of liquid polyethylene formed during the extrusion process. Experiments of electrical tree initiation by means of ramp tests were conducted using newly developed electrode system with point-to-point structure. Constant voltage tests were also carried out with the electrode system to estimate the life time of the insulation. Results were analyzed using statistical method such as Weibull distribution.

Photochemical defluorination and substitution of fluorocarbon-resin surfaces using a pulsed Nd:YAG laser(266 nm) and copper-sulfate$(CuSO_4)$ aqueous solution were discussed. Interface of copper nuclei and fluorocabon-resin was chemically bonded through oxygen which was photodissociated from water in copper-sulfate aqueous solution under the laser irradiation. The reaction mechanism for chemical surface modification is discussed on the basis of x-ray photoelectron spectroscopy and atomic force microscope analyses.

For the development of electro magnetic shielding materials by use of the conductive polymer, measuring technique related to their shielding effect should be well established. For this propose, several commercialized techniques based on different conception have been well compared in order to adopt appropriate method to our materials under development and then, flanged coaxial holder type fixture device has been fabricated and tested satisfied performance has been obtained showing over 90dB in dynamic range with accuracy of +/-2dB.

Screen printing에 의해 압전 후막을 제조하기 위하여 약 $0.6{\mu}m$의 평균 입자 크기를 갖는 PMN-PZT와 PAN-PZT 분말을 산화물 혼합법에 의해 제조하였다. 치밀한 후막의 제조를 위한 분말과 유기물의 비율은 분산이 가능한 범위에서 80:20 (분말:유기물)의 중량비를 나타내었다 사용된 기판과 하부전극은 각각 $SiO_2$/Si와 AgPd 였으며, 후막 제조시 박리 및 균열현상은 발생되지 않았다. 프린트된 후막은 건조온도와 무관한 미세구조를 나타내었으며, 보다 치밀한 구조를 갖는 후막의 제조를 이해 입자의 분산 및 열처리 조건 그리고 기판과의 매칭에 대해 연구가 계속되어야 할 것으로 생각된다.

The fabrication process for ceramic fuel cell with a large electrode area was investigated. A cofired cell of two layer, electrolyte/anode, yielded a power of $200mW/cm^2$. Its performance loss was mainly due to iR drop in the anode side. The performance of the cofired of three layer. cathode/electrolyte/ anode, was much lower than that of two layer, which resulted from the large iR drop and overvoltage at the cathode side. Also a flat cell with a large area of $7.7{\times}10.8cm^2$ was fabricated successfully and tested using ceramic and metallic interconnectors. The large cell with metallic interconnectror showed a good performance of 0.6 V, 4.5 A.

As a preliminary experiment for the development of anode-supported tubular cell with proper porosity, we have investigated the anode substrate and the electrolyte-coated anode tube. The anode substrate was manufactured as a function of carbon content in the range of 20 to 50 vol.%. As the caron content increased, the porosity of the anode substrate increased slightly and the carbon content with proper porosity was obtained at 30 vol.%. The anode tube was fabricated by extrusion process and the electrolyte layer was coated on the anode tube by slurry dipping process. The anode-supported tube was cofired successfully. Their sintered property and microstructure were examined and the porosity of the anode tube was 35%. From the gas permeation test, the anode tube was found to be porous enough for gas supply. On the other hand, the anode-supported tube with electrolyte layer indicated a very low gas permeation rate. This means that the coated electrolyte was dense. Based upon these experimental results. we will fabricate and test the anode-supported tubular cell.

In this study, (Ba,Sr)$TiO_3$ thin films were etched with a magnetically enhanced inductively coupled plasma (MEICP) as a function $CF_4$/Ar gas mixing ratio. Experimental was done by varying the etching parameters such as rf power, dc bias and chamber pressure. The maximum etch rate of the BST films was $1700{\AA}$/min under $CF_4/(CF_4+Ar)$ of 0.1, 600W/350V and 5 mTorr. The selectivity of BST to Pt and PR was 0.6, 0.7, respectively. X-ray photoelectron spectroscopy (XPS) studies shows that there are surface reaction between Ba, Sr, Ti and C, F radicals during the (Ba,Sr)$TiO_3$ etching. To analysis the composition of surface residue remaining after the etching, films etched with different $CF_4$/Ar gas mixing ratio were investigated using XPS.

Recently, $SrBi_2Ta_2O_9$(SBT) and $Pb(ZrTi)O_3$(PZT) were much attracted as materials of capacitor for ferroelectric random access memory(FRAM) showing higher read/write speed, lower power consumption and nonvolartility. Bi-layered SBT thin film has appeared as the most prominent fatigue free and low operation voltage for use in nonvolatile memory. To highly integrate FRAM, SBT thin film should be etched. A lot of papers on SBT thin film and its characteristics have been studied. However, there are few reports about SBT thin film due to difficulty of etching. In order to investigate properties of etching of SBT thin film, SBT thin film was etched in $CF_4$/Ar gas plasma using magnetically enhanced inductively coupled plasma (MEICP) system. When $CF_4/(CF_4+Ar)$ is 0.1, etch rate of SBT thin film was $3300{\AA}/min$, and etch rate of Pt was $2495{\AA}/min$. Selectivities of SBT to Pt. $SiO_2$ and photoresist(PR) were 1.35, 0.6 and 0.89, respectively. With increasing $CF_4$ gas, etch rate of SBT thin film and $P_t$ decreased.

$Nb_3Sn$ superconducting wires were fabricated in order to investigate the effect of pre-heat treatment for internal tin process. 2 types of Sn reservoir were fabricated. One was arranged one large Sn reservoir in the center of wire, the other arranged several Sn reservoirs inthe wire. Diffusion of Sn is better in the strand divided Sn equally than in the strand had one large Sn reservoir during pre heat-treatment. Critical current was better in the wires divided Sn reservoirs uniformly after whole heat treatment.

We formed $SiO_2:F$ films by low-temperature process called Liquid Phase Deposition(LPD) and investigated its electrical and physical properties. Because of the use of room-temperature and no special vacuum apparatus for forming $SiO_2:F$ films, this technique can have some advantages related with the application to dielectric interlayer for multilevel structure in ULSI devices. The growth rate 100nm/hr was obtained at the growth solution of 2.5mol/l. The P-etch rate showed a similar or better tendency compared with $SiO_2$ films formed by CVD, Sputter, E-beam evaporator etc.. The fourier transform infrared (FTIR) spectra revealed that the contained fluorine atoms exist uniform throughout the formed $SiO_2$ films. The Scanning Electron Microscope images showed that LPD-$SiO_2$ films could be stably grown on silicon substrates and the good step-coverage could also be obtained, which indicates that the LPD-$SiO_2$ films have some possibility of the application to planarization and interlayer dielectric films which are vitally necessary to achieve the multilevel interconnection in ULSI. The I-V characteristics has some distinct differences according to the concentration of growth solution.

Linear and nonliear complex permittivities have been measured for amorphous copolymers of vinylidene cyanide (VDCN) with vinyl acetate (VAc), vinyl propionate (VPr), vinyl benzoate (VBz), styrene (St) and methyl methacrylate (MMA). It is found that the third order permittivity ${\varepsilon}_3$ depends upon frequency according to a function ${\Delta}_{{\varepsilon}_3}/(1+i{\omega}{\tau}_^3)$ while the linear permittivity obeys a Debye function ${\Delta}_{{\varepsilon}_1}/(1+i{\omega}{\tau}_1)$. Experimental results are well fitted by the above predicted functions except at low frequencies where dc conduction dominates. The ${\tau}_1$ and ${\tau}_3$ are nearly equal, and depend upon temperature according to a WLF form. The relaxation strength ${\Delta}_{{\varepsilon}_1}$ depends upon comonomers ranging from $130_{{\varepsilon}_0}$(VAc) to $20{{\varepsilon}_0}$(MMA). The ${\Delta}_{{\varepsilon}_3}$ is negative and depends more strongly upon comonomers. Combined knowledge about linear and nonlinear permittivities predicts very large correlation factors which indicates strongly cooperative dipolar motions in those amorphous copolymers.

Aging properties of distribution cables due to irradiation of radiaition rays was investigated. Samples of XLPE are fabricated as hot press, then radiation rays irradiated $0\sim100$Mrad and measured aging properties in the voltage range of $0\sim10$ KV. Voltage-current characteristics of hysteresis curves and the relationship between forward and reverse current due to irradiation of radiaition rays are discussed.

In this work, we have performed the application experiment for real distribution line to diagnose the underground power cables using DC voltage decay measurement system. We have also performed the Isothermal Relaxation Current test for the same distribution line using KDA-l. We could confirmed possibility of grading the insulation aging state of underground power cables. Therefore, we conclude that it is possible to apply DC voltage decay method to the real distribution line.

FRP has been used very much as high strength core materials for insulators because of its high strength and good insulation properties. The fiber orientation of FRP has a great effect on FRP strength because the strength of FRP mainly depends on the strength of fiber. In this study, compression and bending stress were simulated along to the orientation of glass fiber. In addition, FRP was made by pultrusion and filament winding method. The compression and flexural strength were measured. The tendency of compression and flexural strength according to the fiber orientation of practical measured value of FRP was similar to simulated results.

XLPE is widely used as a main insulation in EHV power cables, deeply connected with thermal stress. In this study, the thermal history of XLPE insulation was examined using DSC(Differential Scanning Calorimetry). The principle is on the basis of the phenomenon that crystal in polyethylene is rearranged as it is annealed near/below the melting temperature. From the result, it was possible to define accurate temperature which was really applied on the XLPE insulation and this method was assured as a useful tool in characterization of thermal history in XLPE cable insulation.

Silicone rubber is being used for the housing material of outdoor high voltage insulators such as composite insulator, bushing, surge arrestor and cable terminator because of good tracking and erosion resistance, good hydrophobicity and recovery of hydrophobicity, and chemical stability. In this paper, tracking and erosion resistance of silicone rubber having fluids and different ATH contents were examined. Fluids were selected under the consideration of their molecular weight and chemical structure, expecting the high migration rate, the good pollutant encapsulation, and the long period with good hydrophobicity. Good tracking and erosion resistance and arc resistance have been achieved for the silicone rubber above ATH content 130 phr.

Epoxy Compound has been used as insulation material in cable accessories. During the applying voltage to cable, heat shock is induced to accessory by the temperature difference between atmosphere and conductor. In this study, crack resistance, thermal and mechanical properties were evaluated about conventional epoxy compound and rubber toughened epoxy compound. Because rubber absorbs the stress caused by heat shock, crack resistance of rubber toughened epoxy compound is high. In the case of low thermal expansion coefficient, the compound shows high crack resistance because of low volumetric change.

The polypropylene has been known to have higher melting temperature than Polyethylene. and good mechanical properties. This paper introduces the experiment result for tree properties of polypropylene thin film with a crystal structure. According to the experiment. tree properties is appeared boundary section of thin film first of all. Also, Spherulites magnitude of slow cooling is larger than that of rapid cooling.

초고압 XLPE(가교 폴리에틸렌) 절연 케이블의 절연사고를 방지하기 위해서는 여러열화 조건하에서 절연체의 수명을 예측하는 것과 아울러 절연체(XLPE)의 성능향상을 모색하는 것이 바람직하다. 이러한 노력의 일환으로 절연재료의 열화현상을 화학반응의 법칙으로 가정한 Arhenius 모델과 같은 열화이론이 확립되어지고 있다 하지만, 실제 케이블을 만드는 과정에서 절연체의 성형 조건에 따른 절연 성능 평가와 관련된 연구는 그렇게 많지 않다. 본 연구에서는 XLPE의 성형 조건(가교, 건조, 냉각)에 따른 화학적 물성의 변화와 절연성능 사이의 상관관계를 알아보기 위해 LDPE에 가교제(DCP)를 첨가한 컴파운드를 이용해 만든 몰드 시편의 물성을 DSC, 가교도 분석 및 전기 트리 개시 전압을 측정해 살펴보았다. 그 결과 가교나 건조 조건에 비해 냉각 조건에 따른 가교 폴리에틸렌의 결정화도가 트리 개시전압에 보다 큰 영향을 미침을 알 수 있었다.

We have fabricated good quality superconducting $YBa_2Cu_3O_{7-{\delta}}$ thin films on Hastelloy(Ni-Cr-Mo alloys) with $CeO_2$ buffer layers by in-situ pulsed laser deposition in a multi-target processing chamber. Using one of electrical properties of YBCO superconducting which the resistance approaches to zero dramatically on transition temperature, we have researched to make power transmission line, we have deposited YBCO thin film on flexible metallic substrate. However, it is difficult to make films on flexible metallic substrates due to both interdiffusion problem between metallic substrate and superconducting layer and non-crystallization of YBCO on amorphous substrate. From early research, two ways-using textured metallic substrate and buffer layer-were proposed to overcome theses difficulties. We have chosen $CeO_2$ as a buffer layer which has cubic structure of $5.41{\AA}$ lattice parameter and only 0.2% of lattice mismatch with $3.82{\AA}$ of a-axis lattice parameter of YBCO on (110) direction of $CeO_2$. In order to enhance the crystallization of YBCO films on metallic substrates we deposited $CeO_2$ buffer layers at varying temperature $700^{\circ}C$ to $800^{\circ}C$ and $O_2$ pressure. By X-ray diffraction, we found that each domination of (200) and (111) orientations were strongly relied upon the deposition temperature in $CeO_2$ layer and the change of the domination of orientation affects the crystallization of YBCO upper layer.

Effects of carbon black species and concentration on the mechanical and electrical properties of alumina trihydrate filled EPDM compounds were investigated. Mechanical properties improved with increasing carbon black concentration, and these effects were prominent in carbon blacks haying large specific area. In the case of non-conductive carbon black. tracking resistance improved when a small amount of carbon black was added to EPDM. Conductive carbon black showed detrimental effect to dielectric losses, volume resistivity and tracking resistance of EPDM compound.

In order to determine what influences the interfacial breakdown between two internal dielectric surfaces. We studied the interfacial breakdown phenomena at several interfacial conditions. With the increase of interfacial pressure, at first breakdown strength in interfaces was increased, and then saturated. Breakdown strength in interface pasted with silicone oil was higher than that with silicone grease. As a function of heat treatment time in a vacuum oven interfacial breakdown strength was increased much in XLPE/EPDM laminates pasted with silicone grease but increased a little in that with silicone oil. As an increase of curing agent in silicone oil and grease, breakdown strength in interfaces was increased and then saturated.

The characteristics of ultrasonic signal in insulation oil were investigated by optical fiber sensor(OFS) utilizing Mach-Zehnder interferometer. For checking the response properties of OFS ultrasonic signal was generated by function generator in various kinds of insulation oil. The attenuation of ultrasonic signal linearly increased with the increase of viscosity of insulation oil in log scale. Discharging signal was produced by neele-sphere electrode system. Intensity of discharging signal was plotted in terms of cumulative $y^2$ and the intensity of discharging signal in new oil was little bigger than that in serviced one.

Crosslinked polyethylene/silane crosslinked polyethylene (XLPE/SXLPE) blends were prepared by a twin screw extruder and their water tree and crosslinking characteristics were investigated. The water tree characteristics of XLPE were improved by the addition of SXLPE, when samples were cross- linked only by the thermorolysis of DCP (dicumyl peroxide). However, steam curing process was not good for water tree characteristics. It was also found that the degree of crosslinking of XLPE/SXLPE blends were higher than that of XLPE.

Silicone rubber have presently been using in large number for a variety of outdoor HV applications. Silicone rubber have the properties of low surface energy and are able to retain its hydrophobicity or water repellency, thereby suppress the leakage current in the present of moisture and contamination. In this paper, we investigated the recovery characteristics of silicone rubber by measuring the leakage current under salt-fog.

To find effective diagnostic method for Transmission OF cables, various characterizations were carried such as DGA (dissolved gas analysis), water contents, total acidity and AC breakdown voltage. It was found that the result was varied by sampling and container. The results from those characterization method showed the present condition and history very well and could be used to estimate the degree of degradation of cables.

This paper introduces the data processing method and the measurement of the leakage current flowing through polymer insulators. For ageing diagnosis of polymer insulator, data aquisition system was developed to record the leakage current of insulator being tested. Hence, we have gained information for life time from its leakage current. the DAS is protected against over-voltage which would develop in the event of a flashover of the test sample.

Epoxy resin has been used as matrix resin of advanced composites owing to ideally suitable properties and inherent physical and chemical properties for electrical and electronic insulation. In this paper, in order to evaluate the performance of epoxy composites for out door insulation, variations of tracking resistance were investigated on the complex ageing parameter. Also, IPN methods were introduced in order to improve performance for out door use. As a result, it was confirmed that tracking resistance were degraded with complex ageing parameters. But, it was confirmed that specimen of IPN structure have the better tracking resistance properties than SIN structure by moisture absorption aging.

In this work, the effect of blend on physical and electrical properties investigated. The two kinds of low-density polyethylene (LDPE) whose densities are evaluated at $0.9179[g/cm^3]$ and $0.9192[g/cm^3]$, respectively, were used and blended according to the different blend ratio. The LDPE with the blend ratio of 50[wt%] represented the lowest impulse breakdown strength, $F_{BImp}$ at $30[^{\circ}C]$, but the highest $F_{BImp}$ at $90[^{\circ}C]$. DC breakdown strength, $F_{BDC}$. decreased with the increase of blend ratio at $30[^{\circ}C$, but increased at $60[^{\circ}C]$. The current density decreased with a blend ratio up to 75 [wt%] at $90[^{\circ}C]$. By analyzing the diffraction patterns of XRD, we found that the LDPE with the blend ratio of 50 [wt%] represented the largest crystal size of (020) plane. We investigated the relationship between the effect of blend and electrical properties and these results are discussed.

Recently, high voltage outdoor ploymer insulators have been widely used commercially owing to their excellent electrical and mechanical properties, superior comtamination flashover performance, light weight, easy installation or handing, no maintenance during service, competitive price and so on. compared to porcelaain and glass insulators. For instance, silicone rubber(SR) for polymeric insulators specially has much superior insulating and anti-pollution performance due to its specific hydrophobicity even in severe contaminated environments. We have investigated surface discharge current characteristics of silicone rubbers(SR) for HV outdoor composite insulation specimen under accelerated aging codition using a computer measuring system. The relations of average leakage current and surface discharge current repetition rates and discharge current amplitude, the distribution of discharge current amplitude were studied to investigate electrical conduction of silicone rubber surface with the salt fog condition.

PD in defect of solid insulation system is very harmful since It often leads to deterioration of insulation by the combined action of the discharge ions bombarding the surface and the action of chemical compounds that are formed by the discharge. PD can indicate incipient failure, so it has been used to determine degradation of insulation. In this paper. we investigated PD in defects of solid insulation by using statical method and classified PD patterns with surface discharge, electrical tree and void discharge by using Kohonen network. we used peak charge, average discharge power, average discharge current, repetition rate, skewness, kurtosis, QN of the max pulse height vs. repetition rate $H_q(n)$ for analysis and classification.

In order to analysis the degradation process of epoxy/glass fiber for outdoor condition, FRP laminate was exposed to high temperature and water. Then the degradation process was evaluated by comparing contact angle, surface potential decay, and surface resistivity. For the change of wettability, the contact angle of thermal-treated specimen with the high temperature of $200^{\circ}C$ increased. But that of water-treated specimen decreased. The characteristic of surface potential decay shows the tendency of the remarkable decrease on water-treated specimens, but no difference on thermal-treated specimen compared with untreated one. Also, for the surface resistivity, it shows the same trend compared with the change of contact angle.

In this paper, we studied the short circuit current and molten mark of polyvinyl chloride insulated flexible cords(VFF). The calory decreased remarkably with increase of current. The surface structure and composition of a strand wire were analyzed by stereoscope, scanning electron microscope (SEM), and energy dispersive x-ray spectroscopy(EDX). The surface of a strand wire showed columnar and void. The intensity of CuL spectrum increased in melted mark.

In this study, we evaluated the dependence of thickness and temperature in the breakdown strength of MDPE and effect of semiconductor. As the result, breakdown strength trend to decrease according to the increase of thickness and temperature. We obtained the result that the breakdown strength was a little lower in the structure of Semi/MDPE than Semi/MDPE/Semi, but breakdown strength of MDPE was greater both of all. The dependency of permittivity, tan ${\delta}$ and conductance on frequency and temperature were investigated. Both of the specimans showed the trend of decreased in permittivity as the temperature increased but increase as the frequency increased.

In this paper, humidity and temperature were carried out on XLPE sheet and XLPE/semi sheet. We measured voltage, temperature dependency and dielectric properties of humid dielectric materials. Dielectric losses of XLPE(A,B)/semi with and without humidity were $4.2{\times}10^{-4}$ and $3.6{\times}10^{-4},\;2.8{\times}10^{-4}$ and $3.2{\times}10^{-4}$, respectively, at room temperature. On the condition that humidity and semiconductors exist, we confirmed that dielectric properties had been influenced on semiconductor and humidity.

This paper deals with the seasonal variation of soil resistivity and the special characteristic for ground rods by lapse of time. The ground resistance was changed by humidity, temperature of earth and earth resistance. In this experiment, we studied the resistivity during the period from June 1995 to May 1996 by the soil and the corrosion of the ground rods. As a result, the soil resistivity during the period are appeared minimum in summer and maximum in winter. The loss in weight of Fe rod appeared higher than Cu, Al, Cu-Zn, and St. In the lapse of time, Fe rod was reduced 1.2 % later two years and 1.95 % later three years in weight. Cu rod was defected oxygens of 14.7 % later two years and 30.3 % later three years by EDX.

This paper provides the results of dielectric properties for aged or controlled lightening arresters. The aged lightening arresters were used for five years in distribution line. The leakage current of lightening arresters and elements was measured to confirm whether the lightening arrester was deteriorated or not. The microstructure was also investigated to determine the size of grain and grain boundary. The dielectric properties of aged lightening arresters were compared to those of controlled lightening arresters. The dielectric constant and the tan${\delta}$ of aged lightening arrester were larger than those of controlled one, resulting from accelerated aging due to the thin grain boundary.

Epoxy compound has been used as insulation material in electrical equipment because of its properties 1) Nowadays, becoming higher voltage system, the properties of interface between epoxy and its metal insert become more important. In this paper, we suggest two types semiconducting paste. One is epoxy type and the other is olephine type. After sprayed the semiconducting paste on metal insert sanded, we procedure the test one is the adhesion strength test, the other is electrical breakdown strength test. So we knew that the epoxy type paste became more higher adhesion strength than olephine type paste because of its homogeneity at the interfaces. And at the breakdown strength test, olephine type paste became less higher than epoxy type paste because of its volatility. So in this study, we suggest the optimum interface condition by adjusting the semiconducting paste and surface roughness.

In the present study. we investigated the role of fillers, alumina trihydrate (ATH) and calcined clay, on the mechanical and electrical properties of EPDM compounds. Mechanical properties and tracking resistance improved with increasing ATH fillers. whereas volume resistivity, tan$\delta$ and dielectric constant decreased when ATH was replaced by clay filler. Futhermore, it was more prominent in $90^{\circ}C$ hot water test. This was explained with polarity of ATH, and the smaller particle size of ATH filler than clay filler.

Room Temperature Vulcanizing (RTV) Silicone Rubber has been widely used to coat porcelain insulator to prevent formation water filming on insulator surface. and RTV silicone rubber has water repellency to suppress leakage current and consequent flashover. RTV silicone rubber's surface has been degradated by outdoor condition such as dust, salt, and water. etc. ESDD(Equivalent Salt Deposit Density) and leakage currents are increased by polymer surface toughness and degradation. In this paper, we investigated relations of surface toughness, ESDD, and leakage currents.

In this paper, we investigate the electrical characteristics of contaminants on highvoltage insulators. We measure the conductivity of polluted water obtained from bottom surface of insulators with wiping method with wiping method, then calculate the equivalent salt deposit density(ESDD) with specific equation. And, through the analysis, ICP/MS, for contaminants, we can know the amount of specific composition which is contained in the washed solution. Based on the analysis result, we investigated the degree of contribution on the electrical characteristics of contaminant solution. Through this investigation, we got some significant result, such as the relationship between the conductivity and solubility.

Our $CO_2$ sensor is based on an electrochemical reaction involving NASICON, Ba-Stabilized $Na_2CO_3$, two Pt electrodes, $O_2$, and $CO_2$.. NASICON thin films were deposited by pulsed laser deposition(PLD). The sensitive electrode made of Ba-stabilized sodium carbonate was magnetron sputtered. An emf between two Pt electrodes was proportional to the logarism of the concentration of $CO_2$ in the ambient. This sensor has a sensitivity of 3.82mV/decade and does not show any saturation for $CO_2$ concentration as high as 200,000 ppm.

혈액 내의 요소 농도는 신장병 진단의 척도로서 정확한 측정이 필요하다. 요소의 농도는 전위차법을 이용하여 정확히 검출할 수 있으며 이를 위하여 효소를 고정화시킨 전극형 센서를 사용하였다. 전도성 고분자로서 P3MT(Poly(3-methylthiophene) )와 PPy(polypyrrole)를 효소 고정화에 이용하였다. PPy는 전기적 특성이 좋고 중합 및 효소의 고정화가 용이하며 중합 과정이 상대적으로 신속하고 비용도 저렴하다는 장점은 있으나. 다소 불안정하다. P3MT는 PPy와 마찬가지로 전극 상에 단량체가 전기적 산화에 의하여 중합되고 일반적으로 전해질 이온이 도우핑된 상태나 도우핑 되지 않은 상태 모두에서 산소. 습도. 온도에 대하여 매우 안정하다. 본 연구에서는 3-methylthiophene과 pyrrole을 전기 중합하여 urease를 고정화한 요소센서의 특성(감도, 안정성, 직선성)을 비교하였다. P3MT를 이용한 센서와 PPy를 이용한 센서 각각에 대해 감도는 P3MT가 32.3mV/decade, PPy가 4.7mV/decate로서 P3MT가 우수하였고 직선성도 보다 뛰어났으며 순환 전압 전류 곡선을 분석한 결과 P3MT가 PPy보다 안정성도 우수한 특성을 보였다.

In order to study the mechanical properties of high nitoren steel with ageing time, hardness, tensile stress several basic properties of Fe-Mn-Cr-Ni-N steel have been studied. With increasing partial pressure of nitrogen and ageing time to 10h, hardness and tensile stress are increased, but decreased beyond 10h because of over ageing. It is considered that the main factor related with mechnical properties is carbide precipitate, $M_7C_3$ which is precipitated with ageing time in matrix and optimum ageing time is 10h in $60^{\circ}C$.

In this paper, We are studied the electrical properties of thin film mixed with LLDPE and EVA, and the specimen is selected as Low Linear Density Polyethylene and Ethylene Vinyl Acetate produced by mixture ratio of 50:50, 60:40, 70:30 and 80:20. (thickness $100[{\mu}m],\;70[{\mu}m],\;50[{\mu}m],\;30[{\mu}m]$). As the electrical properties. one is electrical conduction characteristics of the due to mixture ratio of linear low density polyethylene (LLDPE) and ethylene vinyl acetate(EVA), the other is AC breakdown of specimens due to variation of the thickness. From the result of XRD, it is confirmed that specimen of 80 : 20 and virgin LLDPE have high peaks at $2\theta=21.4[^{\circ}]$ and the peak by the contribution of amorphous at $2{\theta}=19.5[^{\circ}]$ is constant with no relation to mixture ratio, but virgin EVA is somewhat lower.

일반적으로 SOI 소자에 대한 연구는 film 두께. 채널길이 그리고 doping 농도에 따라 폭넓게 연구되어 왔다. 제안한 소스/드레인 비대칭 SOI 소자는 일반적인 LDD SOI 소자와 비교하여 항복전압은 거의 비슷한 반면. 전류 구동능력은 훨씬향상된 소자를 구현 시킬수 있었다. 비대칭 SOI 소자를 설계하기 위하여 최적화된 공정조건을 모의 실험용 TCAD Simulator (SILVACO)를 이용하여 검증하였다. 검증된 공정 변수를 이용하여 모의 실험을 해보았더니 항복전압과 전류 구동능력에서 좋은 특성을 나타내었다.

Oxide of the form $Mn_3O_4-CuO-Co_3O_4$-NiO-ZnO present properties that make them useful as power NTC thermistor for current limited. Power NTC thermistor electric properties of $Mn_3O_4-CuO-Co_3O_4$-NiO-ZnO system has been measured as a function of temperature and composition and current - voltage, time constant, activation energy, heat dissipation coefficient have also been determined.

Crosslinked LB films of p-HP (p-hexadecoxyphenol) were produced to insulation layers of electronic devices. The fabrication and the electrical properties of LB films according to crosslinking have investigated respectively to Brewster angle microscopy (BAM), Scanning Maxwell-stress microscopy (SMM), current-voltage (I-V) properties and frequency-capacitance (C-F) characteristics. According to crosslinking, conductivity of p-HP LB films have improved and relative dielectric constant have reduced.

In this study, three kinds of Mn-Zn ferrite/Ni-Zn ferrite/$Ni_2Y$ ferroxplana prepared by the coprecipitation method were compounded with the silicon rubber, and the ring-shaped specimens with various compositional ratio were made. The material constant of ferrite/rubber composite absorbers was obtained by the 2-port method. The material constants of the ferrite/rubber composite microwave absorber made of three kinds of ferrite with various compositional ratio were utilized in design the matching conditions (frequency and thickness) on the impedance matching map. We were able to predict the matching condition from the matching map. On all three kinds of ferrite/rubber composite microwave absorber with less than compositional ratio 60[wt.%] of ferroxplana, we have found that the reflection losses were over than 20[dB] at the S-Band $(2\sim4[GHz])$ and C-Band$(4\sim8[GHz])$.

ITO films on plastic substrate were prepared by DC magnetron sputtering method using powdery target and their properties were investigated as a function of the deposition conditions. As the sputtering power and total pressure were higher, the resistivity of ITO films increased. The optical transmittance deteriorated with increasing sputtering power and thickness. As the total pressure increased, however, the optical transmittance improved at visible region of light. From these results, we could deposited ITO films with $8{\times}10^{-3}{\Omega}-cm$ of resistivity and 80% of transmittance at optimal conditions.

The FLR(Field Limiting Ring) structure with a buried ring is proposed to improve breakdown voltage. The breakdown characteristics of proposed structure is verified by two-dimensional device simulator. ATLAS. It has shown that the breakdown voltage of the proposed structure is increased by 11 % compared with that of the FLR.

The conduction characteristics of $Pr_6O_{11}$-based ZnO varistor were investigated. ZnO-$Pr_6O_{11}$-CoO-$Sm_2O_3$-based ZnO varistor were sintered at $1300^{\circ}C$ and $1350^{\circ}C$ in the addition range $0.0\sim2.0mol%$ $Sm_2O_3$, respectively. ZnO varistors which are added with 1.0mol% at each temperature exhibited best excellent conduction characteristics, namely the nonlinear exponent was 42.05 at $1300^{\circ}C$, 36.79 at $1350^{\circ}C$ and leakage current was $9.16{\mu}A$ at $1300^{\circ}C$, $11.7{\mu}A$ at $1350^{\circ}C$. Consequently, it is estimated that ZnO-$Pr_6O_{11}$-CoO-$Sm_2O_3$-based ZnO varistors, which $Sm_2O_3$ is added 1.0mol% is to be used as a basic composition of $Pr_6O_{11}$-based ZnO varistors.

The nonohmic characteristics of ZnO-$Pr_6O_{11}$-CoO-based ceramic varistor doped with $Dy_2O_3$ in the range $0.0\sim2.0mol%$ sintered at $1300^{\circ}C$ and $1350^{\circ}C$ were investigated. 98.5 ZnO-$0.5Pr_6O_{11}$-1.0CoO varistor sintered at $130^{\circ}C$ exhibited higher nonlinear coefficient of 36 than the established Pr-based varistor. The four-component-system varistor such as 96.5 ZnO-$0.5Pr_6O_{11}$-1.0CoO-$2.0Dy_2O_3$ exhibited very highly nonohmic characteristics, which has nonlinear coefficient of 53.9. 98.5ZnO-$0.5Pr_6O_{11}$-1.0CoO varistor sintered at $1350^{\circ}C$, in contrast with that of $1300^{\circ}C$, exhibited approximately ohmic characteristics but nonlinear coefficient of varistor doped with 0.5mol% $Dy_2O_3$ showed higher nonlinear coefficient of probably 35. Consequently, it can be confirmed that $Dy_2O_3$ acted as additive of improvement on nonlinear coefficient. It is estimated that $Dy_2O_3$ will be used as additive of improvement on nonlinear coefficient to develop a goof ZnO varistor.

The methastable state diamond films have been deposited on Si substrates using MWPCVD. Effects of each experimental parameters of MWPCVD including $CH_4$ conentrations, Oxygen additions, Operating pressure, etc. on the growth rate and crystallinity were invesitigated. The best crystallinity of the film at 3% methane concentration addition of oxygen to the $CH_4-H_2O$ mixture gave an improved film crystallinity at 50% oxygen concentration. Upon increasing the operating pressure, the growth rate and crystallinity were increased simultaneously.

We prepared diamond thin films on WC-Co substrate in $H_2-CH_4-O_2$ gas mixture using 13.56MHz RF PACVD. Scanning electron microscopy, X-ray diffraction and Raman spectroscopy were used to analyze the nature of thin film. and Rockwell test to analyze the adhesion between thin film and substrate. The good diamond quality and adhesion was appeared with cemented tungsten carbide substrate treated with oxygen plasma.

We have prepared the plasma-polymerized membrane for pervaporation of organic-liquid mixtures by the plasma polymerization technique. Plasma polymerization techniques were utilized in the development of hydrophilic composite membranes having high hydrogen ion permeability and excellent dimensional stability. To develop an organic liquid permselective membrane. suppressing membrane swelling as well as enhancing the solubility difference is important, the objectives of the present study are to design a suitable membrane for an organic-mixture system by the control of the plasma-polymer solubility.

$YBa_2Cu_3O_x$ superconducting thick film was fabricated by surface diffusion process of $Y_2BaCUO_5$ and the mixed compound of $(3BaCuO_2+2CuO)$ expected to be liquid phase above the peritectic temperature of YBa2Cu30x. For the surface diffusion. 3BaCu02+2CuO mixed with binder material was patterned on $Y_2BaCuO_5$ substrate by the screen printing method. The characteristic of current limit on thick film fabricated was measured. The thick film limited the current from $2.8213mA_{rms}$ to $4.2034mA_{rms}$ with $500{\Omega}$ load resistance, and from $4.1831mA{rms}$ to $4.2150mA_{rms}$ with $10{\Omega}$ load resistance.

Insulating thin films for strain gauge application, such as $SiO_2$ single layers and $SiO_2/Si_3N_4$ multilayers, are deposited by using both PECVD and RF magnetron sputtering techniques. Micro-structural analysis and electrical characterization are carried out on those films. It has been observed that PECVD films have a smoother surface and a denser micro-structure than sputter films. It should be also found out that the electrical insulation property of $SiO_2$ film can be significantly improved by adding the $Si_3N_4$ layer.

암모니아가스에 민감한 In이 도핑된 ZnO(ZnO:In) 박막을 In 박막$(100{\AA})$ 및 ZnO박막$(3000{\AA})$의 연속적인 증착과 열처리공정을 통하여 제조하고, 이와 같은 방법으로 Al과 In이 도핑된 ZnO (ZnO:Al, In) 박막을 In 박막과 ZnO:Al 박막의 연속적인 증착과 같은 조건에서의 열처리를 통하여 제조하였다. 기판은 $1000{\AA}$의 산화막이 열적으로 성장되어 있는 Si 기판을 사용하였다. In/ZnO 및 In/ZnO:Al 박막 이중층의 열처리온도에 따른 구조적 및 전기적 특성을 x-선회절기, 주사전자현미경, 오제전자분광법 및 4점측정시스템을 통하여 조사하였다. 이들 막에 대하여 열처리온도에 따른 암모니아가스에 대한 감도, 선택성 및 시간응답특성을 구하였다. 열처리온도 $400^{\circ}C$, 동작온도 $300^{\circ}C$에서 100 ppm의 암모니아가스를 주입한 결과 140 %의 최대감도를 나타내었으며 CO, $NO_x$ 가스에 대한 감도는 아주 낮은 것으로 나타났다.

PSN-PT 2성분계 압전세라믹스의 상도로부터 유전적, 압전적 특성이 양호한 MPB (Morphotropic phase boundary)부근의 조성을 선택하여 도너 도펀트인 $Nb_2O_5$와 억셉터 도펀트인 $Fe_2O_3$를 각각 $0{\sim}9wt%$ 첨가하여 유전특성을 비교, 연구해보았다 시편모두 $1250^{\circ}C$이상에서 이론밀도의 96%이상의 값을 얻을 수 있었고 상온, 1kHz에서 $Fe_2O_3$의 경우 0.1wt% 첨가된 시편에서 ${\varepsilon}_r=2054$의 최대 비유전율이 나타났으며, 0.7wt% 첨가된 시편에서는 $tan{\delta}$=0.49%의 최소 유전 손실값을 얻었다. 도펀트가 첨가됨에 따라 ${\varepsilon}_r$는 점점 감소하는 경향을 보였으며 큐리온도 Tc는 $Fe_2O_3$의 경우에서 더 큰 값이 나타났다. $Nb_2O_5$의 경우 도펀트의 증가에 따라 완만한 Relaxor의 형태로 나타났다.

The chief advantage of polymer arrester. from design of pressure relief, anti-contamination, electrical failure was reduced by outdoor polymer housing. In the first for development of pressure relief design for polymer arrester, fault current and surge were studied through experiments of electrical. Designed the FRP inner tube and unit modules for pressure relief housing. Tested the performance of unit modules for pressure relief of polymer arrester, and the result was successful. The pressure relief of polymer arrester depend on design pattern of diamond shape and ellipse. Study on the pressure relief of FRP inner tube for outdoor polymer arrester. Designed and manufactured FRP inner tube of polymer arrester. Tested the fault current of polymer arrester per 10 kA, 10 cycle.

In this paper, we studied the properties of small-size disk-type ultrasonic motor using travelling wave for the application to the precise control robotic joint motor and fabricated it. The diameter of the ultrasonic motor fabricated was 13mm. Also, the piezoelectric vibrator was constructed by piezoelectric ceramic and elastic material. The piezoelectric ceramic was composed to PZ-PT-PMN which was shown the high electromechanical stability under high vibration level and stainless steel was used as the elastic material in which configuration was disk-type. To conform the capability of application to robotic motor, we measured the change of rotational speed according to applied voltage and applied frequency. As the results, the small-size disk-type ultrasonic motor was able to fabricate, and the revolution speed was 350 [rpm] when input voltage was 55 [Vrms] and applied frequency 160.4 [kHz] under pre-load.

This paper is the study for piezoelectric properties of PMN-PT-PZ composition for high power piezoelectric device. It needs the properties such as high mechanical quality factor(Qm), high electromechanical coupling coefficient(kp) and high dielectric strain constant$(d_31)$, and the stable electromechanical properties under high vibration level. For acquiring this results, the value of x is changed in 0.1Pb$(Mn_{1/3}Nb_{2/3})O_3$+(0.9-x)$PbZrO_3+xPbTiO_3$ composition to find MPB(morphotropic phase boundary), and the piezoelectric constants is measured by resonance-antiresonance frequency method, based on IRE Standard. Also, it is measured as a function of the amount of additive, $Nb_2O_5$. When the composition is applied to high power device, the electromechanical properties is measured by laser vibrometer to confirm the reliablity under high vibration level. From these results, PMN-PT-PZ composition is shown excellent properties and capacity of application to high power device.

Dielectric and piezoelectric properties of xPb$(Al_{1/2}Ta_{1/2})O_3$-(1-x)Pb$(Zro_{0.52}Ti_{0.48})O_3$ system were investigated. The highest density of $7.80g/cm^3$ for PAT-PZT ceramics of 5mol% PAT was obtained. The relative permittivity of PAT-PZT ceramics of 5mol% PAT was 1.642 at room temperature. The maximum value of electromechanical coupling factor $k_p$ of 55% and $k_t$ of 33% were obtained at the composition of 5mol% PAT. The grain sizes were reduced by increasing the amount of PAT, however mechanical quality factor$(Q_m)$ had a minimum value of 44 at the composition of 5mol% PAT.

The effect of Na on the structural and electrical properties of CIGS films were studied and their effects on the CIGS/Mo thin film solar cells were investigated. Soda-lime glass and Corning glass were used as substrates to compare the effect of Na diffusion into CIGS film. The resistivity of CIGS films was not changed in the Cu-poor region due to diffusion of Na from soda-lime glass but was mainly determined by the surface resitivity controlled by excess Na.

In order to study the fabricating condition of phosphor layers of thin film EL devices, some discharge characteristics with several targets in the parallel-plate magnetron sputtering system will be studied. Plasma parameters, such as electron density and temperature, are also studied since they may be considered as one of the very important factors of fabricating condition of thin film EL device.

In this study, several lanthanide complexes such as Eu$(TTA)_3$(Phen). Tb$(ACAC)_3$(Cl-Phen) were synthesized and the white-light electroluminescence (EL) characteristics of their thin films were investigated. where the devices having structures of anode/TPD/Tb$(ACAC)_3$(Cl-Phen)/Eu$(TTA)_3$(Phen)/$Alq_3$ or $Bebq_2$/ cathode and the low work function metal alloy such as Li:Al was used as the electron injecting electrode (cathode). Details on the white-light-emitting characteristics of these device structures were explained by the energy band diagrams of various materials used in these structures, where the energy levels of new materials such as ionization potential (IP) and electron affinity (EA) were measured by cyclic voltametric method.

This paper deals with a novel structure of poly-Si solar cell. A solar cell conversion efficiency was degraded by grain boundary effect in Polycrystalline silicon. To reduce grain boundary effect, we performed a preferential grain boundary etching, $POCl_3$ n-type emitter doping, and then ITO film growth on poly-Si. Among the various preferential etchants, Schimmel etch solution exhibited the best result having grain boundary etch depth about $10{\mu}m$. RF magnetron sputter grown ITO films showed a low resistivity of $10^{-4}\Omega-cm$ and high transmittance of 85%. With well fabricated poly-Si solar cells. we were able to achieve as high as 15% conversion efficiency at the input power of 20mW/$cm^2$.

8A5H monolayers on a water surface were investigated by means of Maxwell displacement current measurement. The displacement current was generated during 8A5H monolayers compressed or irradiation with light. And displacement current pulses were found when photoisomerizations were induced in 8A5H LB films by irradiation with ultraviolet light and visible light.

In this paper, we give pressure stimulation into organic ultra thin films and detected the induced displacement current properties, and then manufacture a device under the accumulation condition. In processing of a device manufacture, we can see the process is good from the change of a surface pressure and transfer ratio of area per molecule of organic ultra thin films. The structure of manufactured device is MIM(Au/polyimide LB films/AU), the number of accumulated 19 layers. I-V characteristic of the device is measured from -5[V] to +5[V]. The maximum value of measured current is increased as the number of accumulated layers are decreased. The insulation of a thin film is better as the interval between electrodes is larger, and the insulation properties of a thin film is better as the distance between electrodes is larger.

Organic electroluminescent devices (OLEDs) have received a great deal of attention due to their potential application as full-color displays. Europium complexes are known as excellent red color-emitting materials for OLEDs since they show intense photoluminescence at around 610 nm with a sharp spectral bandwidth. In this study, triple-layer and multiple quantum-well structures consisting of Eu$(TTA)_3$(bpy) complex well layer sandwiched triphenyldiamine derivative (TPD) layers were fabricated and their photoluminescent characteristics were investigated. Sharp emission at the wavelength of 615 nm has been observed from the triple-layer and multiple quantum-well structures containing Eu complex. Details on the electrical properties of these structures will be also discussed.

An active-matrix liquid crystal display (LCD) using thin film transistors (TFTs) has been widely recognized as having potential for high-quality color flat-panel displays. Pixel-Design Array Simulation Tool (PDAST) was used to profoundly understand the gate signal distortion and pixel charging capability, which are the most critical limiting factors for high-quality TFT-LCDs. Since PDAST can simulate the sate, data and pixel voltages of a certain pixel on TFT array at any time and at any location on an array, the effect of the new set of capacitance models on the pixel operations can be effectively analyzed. The set of models which is adopted from VLSI interconnections calculate more precise capacitance. The information obtained from this study could be utilized to design the larger area and finer image quality panel.

$LaCoO_3$ thick-film sensors were fabricated on alumina substrate by screen printing method. The sensitivity for gases was investigated by varying the heat treatment temperature of the films. X-Ray Diffractions and SEM photographs were used to examine their structural properties. The sensitivity of $LaCoO_3$ thick-film for CO gas was much better than for $C_4H_{10}$, $NH_3$ and NO gases. The best condition of heat treatment was $800^{\circ}C$ and the optimal operating temperature of $LaCoO_3$ thick-film for the highest sensitivity was $150^{\circ}C$. Sensitivities of the $LaCoO_3$ thick-film at 500ppm and l000ppm for CO gas were 72% and 95%, respectively.

As new gas sensing material with high cata activity for NO decomposition and for CO oxid $LaFeO_3$ thin films with different thicknesses fabricated by the R.F. magnetron sputtering m on an $Al_2O_3$ substrates with Ag electrodes. The sensing characteristics of the $LaFeO_3$ thin films studied as a function of annealing temperature film thickness. The thin film annealed at showed the highest sensitivity of 110% for CO 60% for NO.

The generation of pretilt in nematic liquid crystal(NLC)and electro-optical(EO) characteristics of photo-aligned twisted nematic (TN)-LCD with oblique p-polarized ultraviolet (UV) light irradiation on the two kinds of the soluble polyimide (PI) surfaces containing trifluoromethyl moieties were investigated. The generated pretilt angle of NLC is about $2.5^{\circ}$ with p-polarized UV light irradiation of $20^{\circ}$ on PI-3 surface at 20 min.; However pretilt angle of about $0.5^{\circ}$ are observed on PI-1 and PI-2 surfaces. The generated pretilt angle of NLC on PI-3 surface may be attributed to the trifluoromethyl moieties attached to the lateral benzene rings. The voltage-transmittance and response time characteristics of photo-aligned TN-LCD with p-polarized UV light irradiation of $20^{\circ}$ on PI-1 surfaceat at 20 min were almost same in comparison with the rubbing-aligned TN-LCD. However, the high threshold voltage and slow response are observed on PI-3 surface. Also, the decay time $\tau_d$ of photo-aligned TN-LCD is attributed to the anchoring energy of NLC.

We investigated the annealing effect on generating pretilt angle and aligning liquid crystal (LC) using the photo-depolymerization reaction in this study. In case of rubbing polyimide (PI) surface with the side chain, pretilt angle tends to increase with increasing the annealing time. It is considered because the steric interaction is increased by annealing which cause the side chain to come back to original position. For obliquely irradiating ultraviolet (UV) light on PI surface, pretilt angle shows to $0^{\circ}$ and is increased by annealing. The pretilt angle in rubbed PI surface is much higher than in photo-aligned PI surface. It is attributed to the steric interaction and the number of LC molecular arrangement on azimuthal direction. In addition. in case of obliquely irradiating UV light on PI surface. it showed LC alignment to increase by annealing. It can be regarded due to the fact that the re-alignment of LC molecule is improved to residual polymer direction by annealing.

We synthesised a photo-alignment material of PM4Ch (poly(4-methacryloylloxychalcone)). The electro-optical (EO) characteristics of photo-aligned twisted nematic (TN)-liquid crystal display (LCD) with linearly polarized ultraviolet (UV) light irradiation on PM4Ch surface were investigated. The uniform alignment of NLC with polarized UV light irradiation on PM4Ch surface was measured. Also, We had The excellent voltage-transmittance characteristics of photo-aligned TN-LCD. The low threshold voltage of photo-aligned TN-LCD was measured. Moreover, the fast response time of photo-aligned TN-LCD on PM4Ch was successfully achieved. Finally The reduction DC voltage of photo-aligned TN-LCD decreases with increasing the UV light irradiation time on photo-dimerized PM4Ch surface.

Porous silicon were prepared under various anodization condition on n-Si substrates. Chronoamperometric curves of porous silicon depended on potentials, composition and temperature of electrolytes. and intensity of UV irradiation. Anodic current density decreased continuously at low potential $(\leq0.5V)$ but increased at high potentials (>2V vs. Ag QRE). the difference in chronoamperometric curve is due to different activation energy in the processes involved in porous silicon formation.

Ferroelectric PZT(10/90)/(90/10)heterolayered thin films were fabricated by the alkoxide-based Sol-Gel method Electric and dielectric properties of PZT(10/90)/(90/10) heterolayered thin films have been investigated, focusing on the effect of PZT/PZT and PZT/electrode interface on the heterolayered films. Dielectric constant increased with increasing the number of coatings. Increasing the number of coatings, remanent polarization and coercive field were decreased and the values of the PZT-6 heterolayered thin films deposited on Pt/Ti/$SiO_2$/Si were $7.18{\mu}C/cm$, $68.5kV/cm^2$, respectively. Leakage current, densities were increased with increasing the number of coatings, and the value of the PZT-4 film deposited on the Pt/Ti/$SiO_2$/Si substrate was about $7{\times}10^{-8}A/cm^2$ at 0.05MV/cm.

The (1-x)$MgTiO_3-SrTiO_3$ (x=0,0.1,0.2,0.3) ceramics were prepared by the conventional mixed oxide method. The structural properties were investigated with sintering temperature and composition ratio by XRD, SEM and DT-TGA. Increasing the sintering temperature from $1300^{\circ}C$ to $1600^{\circ}C$, second phase was decreased and grain size was increased. The average grain size of the $0.8MgTiO_3-0.2SrTiO_3$ ceramics sintered at $1600^{\circ}C$ were $3.61{\mu}m$.

SMM is a dynamic noncontact electric force microscopy that allows simultaneous access to the electrical properties of molecular system such as surface potential, surface charge, dielectric constant and conductivity along with the topography. SNOAM is a new tool for surface imaging which was introduced as one application of AFM. Operated with non-contact forces between the optical fiber and sample as well as equipped with the piezoscanners, the instrument reports on surface topology without damaging or modifying the surface for measuring of optical characteristic in the films. Here we report our recent results of its application to nanoscopic study of domain structures and electrical functionality in organic thin films by SMM. Furthermore, we have illustrated the SNOAM image in obtaining the merocyanine dye films as well as the optical image.

The ultrasonic motor used here is the windmill type ultrasonic motor operated by single-phase AC source. A metal-ceramic composite component was used as the stator element to generate ultrasonic vibrations. The windmill type ultrasonic motors has only three components; a stator element of two wind-mill shape slotted metal endcaps, a rotor and a bearing. In this paper we proposed a system for torque measurement of piezoelectric ultrasonic motor.

In this paper, we apply V-Q Lissajoucs' figure for observation of a V-Q (Voltage-Charge) hysteresis loop at interface between phosphor and insulation layer in P-ELDz which are a simple structure and the back lighting of LCDs (Liquid Crystal Display). In V-Q Lissajous' figure, we measured a change of hysteresis loop according to the thickness of Insulation and phosphor layer. From experiment result, we will be obtained a optimum thickness of insulation with comparing the correlation of a V-L (Voltage-Luminance) and V-Q hysteresis loop.

In this paper, we studied Surface Discharge Type Flat Fluorescent Lamp with High Luminance for LCD Backlighting, Liquid Crystal display(LCDs) demand the use of fluorescent lamp as the backlighting source. This lamp is Surface Discharge Type structure with a pair of Sodalime glass, insulator layer, phosphor layer, and Xe gas gap. In spite of its simple structure, the lamp has uniform and stable discharge over entire volume. Till now, we measured the current-voltage(V-I), Firing Voltage, Sustain Voltage for 0.5mm, 1mm electrode gap. In experiment result, long gap cell structure cause high firing voltage. The rising in firing voltage in long gap structure could not be explained by paschen's law because of non-uniform electric field.

In consideration of piezoelectric characteristic and Temperature stability, 3-element system dopped with NiO, $Cr_2O_3$ well-known as Hardner and Stabilizer whose primary element is PZT was eximanated its structure, piezoelectric characteristics, dopping with Nio, $Cr_2O_3$. We think that piezoelectric Characteristic is developed, remenent polarization and $E_c$ can developed in specimens by dopping with NiO, $Cr_2O_3$ additive. also, electromechanical quality factor largely showed tendency of decrement. According to dopping NiO, $Cr_2O_3$ more.

PVDF(Polyvinylidene Fluoride) thin films were prepared by using a physical vapor deposition system. Thin films were studied by X-ray diffraction (XRD), differential scanning calorimeter (DSC). The melting point$(T_m)$ of PVDF thin films increases with increasing substrate temperature. It is found that the degree of crystallinity of PVDF thin films increases from 49.8 to 67% with increasing substrate temperature from 30 to $80^{\circ}C$.

ITO thin films have been deposited on PET substrate by reactive dc magnetron sputtering without substrate heater and post heat treatment. The electrical and optical properties of as-deposited films are dominated by oxygen gas ratio. As the experimental results, the excellent ITO films are prepared on PET substrate at the operating conditions as follows: operating pressure of 5 mTorr, target-substrate distance of 4.5 cm, dc power of $20{\sim}30W$, and oxygen gas ratio of 10 %. The optical transmittance is above 80 % at 550 nm, and the sheet resistance and resistivity of films are $24{\Omega}$/square and $1.5{\times}10^{-3}{\Omega}cm$, respectively.

In this paper, to implement the electrical equivalent modeling of powder electroluminescent device, capacitate equation of device was chosen. The conventional structure device which have dielectric and phosphor layer between electrodes, and the single emission structure device which means that dielectric and phosphor were mixed between electrodes, were investigated. As a result, It was possible to make the equation that is transferred capacitance to phosphor layer, and using measured brightness efficiency and conductivity of devices was calculated.

Electroluminescence is occurred when phosphor is located in electric field. In this paper, we made powder electroluminescent device (PELD) with structured ITO film/phosphor/Insulator/silver paste. The transparent electrode was ITO film and green(2704-01) and orange(2702-02) and blue-green(2703-01) were used as phosphor. The insulator was $BaTiO_3$ and $Y_2O_3$, back electrode was silver paste. To investigate electrical and optical properties of PELDs, EL spectrum, Brightness, Transferred charge density using Sawyer-Towers circuit was measured.

The thermal expansion coefficient of the titania-fused silica glass$(TiO_2-SiO_2)$ called KLR-1.1 is known to $0{\pm}0.03$ ppm/K, while that of normal fused-silica glasses is about +0.5 ppm/K at room temperature. To analysis the dielectric properties of the KLR-1.1, the sample with diameter of 30 mm and thinkness of 1 mm is covered with gold film. Its relative permittivity and dissipation factor of KLR-1.1 is evaluated to $4.011{\pm}0.012(1\sigma)$ and $(4.86{\pm}0.02){\times}10^{-4}(1{\sigma})$ at 1 kHz respectively. The measurement techniques used and results are more discussed in this paper.

The electrical and physical characteristics of MgO and Pt thin-films on Si substrate, deposited by r.f magnetron sputtering. It were analyzed with annealing condition($1000^{\circ}C$ for 120 min) by four point probe, a-step, SEM and XRD. Until $1000^{\circ}C$ of annealing temperature, MgO medium layer had the properties of improving Pt adhesion to $SiO_2$ and insulation without chemical reaction to Pt thin-films and the resistivity of Pt thin-films was improved. In the analysis of properties of Pt-RTD, TCR value had $3927ppm/^{\circ}C$ and liner in the temperature range of room temperature ${\sim}400^{\circ}C$.

In recent years, attempts have been made to greatly improve the display quality of active-matrix liquid crystal display devices, and many techniques have been proposed to solve such problems as gate delay, feed-through voltage and image sticking. Gate delay is one of the biggest limiting factors for large-screen-size, high-resolution thin-film transistor liquid crystal display (TFT/LCD) design. Many driving method proposed for TFT/LCD progress. Thus we developed gate driving signal generator. Since Pixel-Design Array Simulation Tool (PDAST) can simulate the gate, data and pixel voltages of a certain pixel on TFT array at any time and at any location on an array, the effect of the driving signals of gate lines on the pixel operations can be effectively analyzed.

The effects of polarity of the polymer on transcription-aligned twisted nematic (TN)-liquid crystal display (LCD) on various the polyimide (PI) surfaces were investigated. The monodomain alignment of nematic (N)LC is obtained in cells fabricated by transcription alignment method on PI surface with medium polarity. The LC alignment using transcription alignment method is attributed to polarity of the polymer. The threshold voltage of transcription-aligned TN-LCD decreases with increasing the polarity of the polymer on three kinds of the PI surfaces. The threshold voltage of transcription-aligned TN-LCD on PI surface with high polarity is almost the same compared to rubbing-aligned TN-LCD. The response time of transcription-aligned TN-LCD decreases with the increasing the polarity of the polymer on all PI surfaces. The decay time of transcription-aligned TN-LCD is slow compared with the rubbing-aligned TN-LCD.

In this paper, the generation of high pretilt angle in nematic liquid crystal (NLC) by dipping effect on three kinds of the rubbed polyimide (PI) surface was investigated. The generated pretilt angle of NLC increases due to dipping effect before rubbing treatment on two kinds of the rubbed PI surface with side chain. The generated pretit angle in NLC by using dipping effect after rubbing treatment on PI surface with short side chain is high compared to the PI surface with long side chain. The generated pretit angle of the positive type NLC $(\Delta{\varepsilon}>0)$ is higher as than that of the negative type NLC $({\Delta}{\varepsilon}<0)$ by using dipping effect before rubbing treatment on homeotropic layer. The generated pretilt angle of NLC is attributed to perpendicular component of permittivity ${\varepsilon}_{\perp}$ of NLC on rubbed PI surface.

This paper presents direct ${\mu}c$-Si:H thin film growth on the glass substrates using RPCVD system (remote plasma chemical vapor deposition) in low temperature. Hydrogenated micro-crystalline silicon deposited by RPCVD system in low temperature is very useful material for photovoltaic devices, sensor applications, and TFTs (thin film transistors). Varying the deposition conditions such as substrate temperature, gas flow rate, reactive gas ratio $(SiH_4/H_2)$, total chamber pressure, and rf power, we deposited ${\mu}c$-Si:H thin films on the glass substrates (Corning glass 1737). And then we measured the structural and electrical properties of the films.

Carbon is an attractive material on electro double capacitor which depend on charge storage in the electrode/electrolyte interfacial double layer. Carbonaceous material for double layer capacitor can be obtained from carbon powder, fiber, film and porous carbon sheet. The capacitance of electrodes using an activated carbon was influenced by a filling density of the carbon, thickness and internal resistance of the electrode. In this study. to reduce internal resistance and increase electric conductivity of the electrode. activated carbon/carbon(AC/C) composite electrode was fabricated. The capacitors which have energy densities of 68F/g(at $30^{\circ}C$), 109F/g(at $60^{\circ}C$) and $68F/cm^3$(at $30^{\circ}C$), $111F/cm^3$(at $60^{\circ}C$) were fabricated by using AC/C composite electrodes.

In order to develop key technologies for a kW class for polymer electrolyte fuel cell (PEFC), various membranes (Nafion(112, 115, 117), Dow, Flemion, Gore, and Hanwha), and electrocatalysts (Pt/C, PtNi/C PtNiCo/C and PtRu/C) were used in the fabrication of the MEAs by using transfer printing technique. The effects of the thickness of Nafion membranes, electrocatalysts and the operating conditions (e.g. temperature, reactant gas pressure, and composition) on the performance of the MEA were investigated in the PEFC single cell($O_2/H_2$, and Air/$H_2$ cell). The performances of the MEAs for $O_2/H_2$ and Air/$H_2$ cells has been evaluated.

반도체 소자가 고집적화 되고 미세화 될수록 좁은 면적에 여러 기능을 가진 우물을 형성시켜야하나 기존의 우물로는 고온 장시간 열처리로 인하여 측면 확산이 깊게 되고, 불순물 농도 분포는 표면으로부터 농도가 점차 낮아진다. 따라서 기존 우물의 불순물 분포로는 기생 트랜지스터에 의한 렛치-엎과 알파 입자에 의한 SER의 감소를 위하여 필요한 벌크에서의 고농도 분포를 유지하기가 곤란하다. 이러한 문제는 차세대 반도체 개발을 위해서는 반드시 해결해야 할 것이며 이것을 해결할 수 있는 공정으로는 고 에너지 이온 주입과 저온, 단시간 열처리이다. 고 에너지 이온 주입 시의 불순물 분포를 어떻게 제어할 것인가에 대한 것과 여기서 부수적으로 나타나는 격자 손상과 그 회복 및 잔류결함의 성질을 어떻게 알고 이를 게터링 등에 이용할 것이냐에 대한 것이다. 실리콘 기판 내로 가속된 이온은 실리콘 격자와 충돌하면서 많은 1차 결함이 생기고. 이들은 후속 열처리 과정에서 활성화되면서 대부분은 실리콘 격자의 위치에 들어가 활성화되고. 그 나머지는 실리콘내의 격자간 산소, 격자간 실리콘. 격자 빈자리와 상호 작용을 하여 2차 결함을 형성한다. 에피택셜 웨이퍼와 p-type웨이퍼에 비소 이온을 고에너지로 주입후 2단계 열처리에 의한 농도분포변화와 핵생성과 결함성장에 관해 실험하였고, 핵생성온도는 $600^{\circ}C$이하이고, 성장에 필요한 온도는 $700^{\circ}C$이상이다.

고에너지 이온주입(1)에 기인한 격자 손상 발생 및 열처리에 따라 이들의 회복이 어느정도 가능한지에 대하여 측정 및 분석방법을 통하여 조사하였다. 그리고 본 실험에서는 이온주입시 형성되는 빈자리 결함(Vacancy defect)과 격자간 결함(interstitial defect)의 재결할(recombination)을 이용 점결합(point defect)를 감소 시킬 수 있는 effective RTA조건을 설정하여 well 특성을 개선하고자 하였다. 8inch p-type Si(100)기판에 pad oxide 100A을 형성한 후 NMOS 형성하기 위해 vtn${\sim}$p-well과 PMOS 형성을 위해 vtp$\sim$n-well을 이온주입 하였다. Mev damage anneal은 RTA(2)(Rapid Thermal Anneal)로 $1000\sim1150C$ 온도에서 $15\sim60$초간 spilt 하여 실험후 suprem-4 simulation data를 이용하여 실제 SIMS측정 분석결과를 비교하였으며 이온주입에 의해 발생된 격자손상이 열처리후 damage 정도를 알아보기 위해 T.W(Therma-Wave)을 이용하였으며 열처리후 면저항값은 4-point probe를 사용하였다. 이온주입후 열처리 전,후에 따른 불순물 분포를 SIMS(Secondary ion Mass Spectrometry)를 이용하여 살펴보았다. SIMS 결과로는 열처리 온도 및 시간의 증가에 따라서 dopant확산 및 활성화는 큰차이는 보이지 않고 오히려 감소하는 경향을 볼 수 있으며 또한 접합깊이와 농도가 약간 낮아지는 것을 볼 수 있었다. 결점(defect)을 감소시키기 위해서 diffusivity가 빠른 임계온도영역($1150^{\circ}C$-60sec)에서 RTA를 실시하여 dopant확산을 억제하고 점결점(point defect)의 재결합(recombination)을 이용하여 전위 (dislocation)밀도를 감소시켜 이온주입 Damage 및 면저항을 감소 시켰다. 이와 같은 특성을 process simulation(3)(silvaco)을 통하여 비교검토 하였다.

게이트 산화막의 breakdown 전압을 나추기 위해 질소 주입을 하는 과정은 실리콘층에 패드 산화막을 성장시킨 후 실리콘과 패드 산화막 층사이에 질소 이온을 주입하였다. 이온 주입 후 패드 산화막 층을 제거하고 그 위에 게이트 산화막 층을 성장시키는 방법을 사용하였다. 이러한 방법을 질소 이온의 농도를 변화시키면서 여러번 반복하였다 그래서 질소 이온 농도의 변화에 따른 게이트 산화막 두께의 변화를 측정하였다. 그 결과 질소 농도이 따른 게이트 산화막 성장비율을 알아 보았다. 그리고 질소 농도의 변화에 따른 Breakdown 전압과 누설 전류의 변화를 측정하였다. 또한 앞에서 말한 질소 주입 공정이 들어가면서 추가적으로 발생하는 과정에 대해 고찰하였다.

다결정 실리콘 박막 트랜지스터(TFT)의 누설전류를 줄이기 위하여 채널의 중간에 선택적으로 도핑된 영역을 가진 새로운 다결정 실리콘 TFT를 제안한다. 제안된 TFT에서는 채널의 일부가 선택적으로 도핑되어 채널 전체에 걸리는 전기장이 재분배된다. 제안된 n-채널 TFT는 $V_{GS}$<0, $V_{DS}$>0인 조건에서, 대부분의 전기장이 드레인 접합에 형성되는 공핍영역과, 도핑된 영역 중 소오스 쪽과 도핑되지 않은 채널 사이에 형성되는 공핍영역에 각각 나뉘어 걸린다. 기존의 다결정 실리콘 TFT와 비교할 때 드레인 접합에서 걸리는 전기장은 1/2로 감소하였고, 이에 따라 드레인 접합에서 생성되는 전자-홀 쌍도 현저히 감소하였다. 더구나 제안된 TFT의 온-전류는 기존의 TFT와 비교했을 때 거의 같거나 약간 감소하였으며 이에 따른 온/오프 전류비가 현저히 향상되었음을 실험을 통해 확인할 수 있었다.

We have synthesized carbon nanotubes by thermal chemical vapor deposition of $C_2H_2$ on transition metal-coated silicon substrates. Carbon nanotubes are uniformly synthesized on a large area of the plain Si substrates, different from Previously reported porous Si substrates. It is observed that surface modification of transition metals deposited on substrates by either etching with dipping in a HF solution and/or $NH_3$ pretreatment is a crucial step for the nanotube growth prior to the reaction of $C_2H_2$ gas. We will demonstrate that the diameters of carbon naotubes can be controlled by applying the different transition metals.

We have investigated the dielectric characteristics of palmitic acid(PA), stearic acid (SA) and arachidic acid(AA) Langmuir-Blodgett(LB) films because these fatty acid systems have a same hydrophilic group and a different hydrophobic one (alkyl chain length). In this work. fatty acid systems were used as LB films and the status of the deposited films was confirmed by evaluating the transfer ratio. the UV absorption and the capacitance. Also, the dielectric characteristics such as the frequency-capacitance characteristics and the dielectric dispersion and absorption characteristics of PA, SA and AA through-plane were measured. The relative dielectric constants of PA, SA and AA LB films were about $2.6\sim4.6$, $2.4\sim4.1$ and $2.2\sim3.8$, respectively. That is, the relative dielectric constants were decreased in proportion to the chain length of methylene group. And, the dielectric dispersion and absorption of each fatty acid LB films have arisen from spontaneous polarization of dipole polarization in the range of $10^4\sim10^5[Hz]$.

A technique is investigated for achieving broadband properties by controlling the operation frequency of microstrip antennas. The control is achieved by applying DC and AC bias to the microstrip antenna. Air gap antenna with pzt post and microstrip antenna with simple rectangular patch on the $LiNbO_3$ substrate were fabricated. In the case of Air gap antenna, the variation of operating frequency was 11Mhz and $LiNbO_3$ antennas was 11Mhz. Also, frequency scanning was achieved by appling AC bias.

The PDP(Plasma Display Panel) barrier rib was fabricated by focused $Ar^+$ laser ($\lambda$=514nm) and Nd:YAG($\lambda$=532, 266 nm) laser irradiation. The depth of the etched groove increases with increasing a laser fluence. and decreasing a scan speed. Using the second harmonic of the Nd:YAG laser, the threshold laser fluence was $6.5mJ/cm^2$ for the sample of PDP barrier rib dried at $120^{\circ}C$. The thickness of $150{\mu}m$ of the sample on the glass was etched without any damage on the glass substrate by fluence of $19.5J/cm^2$. The barrier rib sample on hot plate was etched by Nd:YAG laser(532 nm) as increasing a temperature of the sample. In this case, the etch rate was $95{\mu}m/s$, $190{\mu}m/s$ at room temperature, $175^{\circ}C$ respectively.

In order to enhance satellite communication system performance, filters are required with the characteristics of sharp skirt, low insertion loss, and high power handling capability. But the performance of microwave passive filters is significantly declined by the conduction losses, especially in case of planar structures using film conductors. By using high temperature superconducting(HTS) film material as the conductor, higher performance could be expected. We have designed and developed narrow bandpass filters using haripin-type superconducting microstrip line for satellite communication. High quality superconducting YBCO thin films have been grown on MgO substrates by pulsed laser deposition(PLD) The deposited YBCO films were patterned by conventional wet-etching process. The transition temperatures of these films had shown 86 - 89 K. The film thicknesses were about 500 nm. Experimental results are presented for the insertion loss and return loss of the filter at 60 K.

$Mn_{1-x}Fe_{2+x}O_4$, $Mg_{1-x}Fe_{2+x}O_4$ (x=0.0, 0.025, 0.1, 0.2) for negative temperature coefficient (NTC) thermistor were prepared by calcining at $800^{\circ}C$ and sintering from 1100 to $1250^{\circ}C$ with $50^{\circ}C$ intervals. The best linear property was obtained in the Mn-based sample sintered at $1200^{\circ}C$ with x=0.0 composition. Temperature coefficient of resistance, $\alpha$, was -3.0 %/$^{\circ}C$ in the Mg-based sample at $25^{\circ}C$. Thermistor parameter, B, was in the range of 2500 [K] $\sim$7400 [K]. The results show the possibility that Mn-Ni-Co based thermistor could be substituted by the composition used in this study.

To fabricate superconducting multiplexers with narrow pass band characteristics and reduce the physical size of device, we have designed multiplexer using hair-pin type filters with the center frequency of 13.6 GHz. Multiplexers have been fabricated superconductor(HTS), because It has low surface resistance. The $YBa_2Cu_3O_{7-{\delta}}$(YBCO) films were deposited on MgO substrates$(20{\times}20{\times}0.5mm^3)$ by using pulsed laser deposition and conventional photo-lithographic methods were used to pattern the multiplexer. Epitaxial YBCO films were grown on(100) MgO substrates and showed strongly c_axis orientations observed by X-ray diffraction technique. Superconducting transition temperatures were measured to be about 89K. Simulated results of superconducting multiplexer consisting of hair-pin type filters show the insertion loss of about 1.2dB. The measured frequency response will be compared with the simulated results.

The polarization gratings were fabricated in chalcogenide $As_{40}Ge_{10}Se_{15}S_{35}$ thin film applicable to a medium of the polarization holography and their diffraction efficiencies$(\eta)$ were monitored by real-time measurement. The polarization gratings prepared consisted of the multi-layer thin film system. As a method to improve the $\eta$, we have investigated its change for the field effect. As the results, the value of $\eta$ strongly depended on the voltage applied to the film and the maximum value, $\eta_{max}$ was enhanced to be about 4 times in comparison with that of not biased sample. In addition, an increase in the $\eta$ can be estimated to be due to additional creation of new defects caused by the electric field across the film.

The magnetic nondestructive test can be applied to evaluate the magnetic material characteristics and the fracture properties through the internal defects of SA-508 used in the pressure vessels of the nuclear power plants as the direct and accurate in-situ testing methods. The fracture toughness, yield strength and the stress distribution around the defects in the surface and sub-surface of magnetic materials can be directly estimated by Bark-hausen noise(BN) methods as NDT. The testing process of SA-508 by Barkhausen noise method was advanced by controlling the austenizing peak temperature and the time of maintenance at a constant austenizing peak temperature, therefore causing the variation of fracture toughness. Through above process. we can evaluate the variations of effective grain size and the correlation of effective grain size and FATT at each situation. And the stress distribution around the defects can be quantified nondestructively through Barkhausen method.

Pulse electric field induced electron emission from ferroelectrics has been studied with Pb$(Zr_xTi_{1-x})O_3$ ceramics with varying Zr/Ti ratio from 35/65 to 65/35, Electron emission was proved to be concentrated on the electrode edge by emission profile test and emission capture photographs. The 65/35 composition showed largest emission charge in lowest field and lowest emission threshold field. The emission characteristics are closely dependent on their ferroelectric properties in hysteresis curve. Electron emission charge increases with the polarization charge and emission threshold voltage is dependent on coercive field regardless of their composition. But dielectric constant has little relation with emission property. Electron emission charge increases exponentially with pulse electric field irrespective of composition. On the assumption that the surface potential is linear with the pulse electric field, electron emission can be regarded as a field emission at the electrode edge using Fowler-Nordheim plot of ln$(Q_e/E_{fe})$ to $1/E_{fe}$.

Performance of 20-cell stack for direct methanol fuel cell (DMFC) was tested at constant temperature. Electrode evaluation used to the stack was tested by the performance of a single cell. A new composite electrode prepared from active carbon cloth and high porous active carbon was developed for hydrophilic layer of the cell. Characteristics of a single cell using the composite electrode showed the current density of $500mA/cm^2$ at the cell voltage of 0.4V at $120^{\circ}C$. For the operating of 20 days. the cell voltage at constant cell current densty of $100mA/cm^2$ was slightly reduced from 0.62V to 0.53V with the cell voltage decay rate of 14.5%. Power of 20-cell stack at 5.3V, $100^{\circ}C$ was about 180W.

The effects of electrode and matrix in the PAFC were investigated using AC-impedance spectroscopy. The performance of PAFC was determined by changing external electronic load. AC impedance measurement was carried out as functions of phosphoric acid impregnation temperature. operating temperature and matrix coating method using various cathodes ; 20%Pt/C, 20%Pt-Ni/C, 20%Pt-Co-Ni/C, 10%Pt-Fe-Co/C, and 20%Pt-Fe-Co/C From the analysis of measured impedance data, the interfacial resistance decreased with increasing operating temperature. and with decreasing impregnation temperature. As compared with the alloy catalysts, Pt catalyst showed a lower interfacial resistance. This consist with the cell performance.

Developed was a 5kW-class polymer electrolyte membrane fuel cell(PEMFC) system comprised of fuel cell stack, fuel processing, thermal and water management subsystems and ancillary equipments. Several large single cells have been fabricated with different gas flow field patterns and paths, and the gas flow field pattern for the stack has been determined based on the single cell performance of thin film membrane electrode assembly (MEA). The PEMFC stack was consisted of 100 cells with an electrode area of $300cm^2$, having serpentine flow pattern. Fuel processing was developed including an autothermal methanol reformer and two preferential CO oxidation reactors. The fuel processing was combined to PEMFC operation system consisted of air compressor and thermal and water management subsystems. The PEMFC stack showed performance of 5kW under the supply of $H_2$ and air, but its performance was lowered to 3.5kW under the supply of reformed gas.

(Ba,Sr)$TiO_3$[BST] thin films were fabricated on Pt/Ti/$SiO_2$/Si substrate by RF sputtering. We investigated the effects of substrate temperature on the structural and dielectric properties of BST thin films. Increasing the substrate temperature, barium multi titanate phases were decreased, and BST (100), (200) peaks were increased. The relative dielectric constant and dielectric loss of the BST thin films at the substrate temperature of $500^{\circ}C$ were 300 and 0.018, respectively at l[kHz]. In all films, the dielectric constants decreased. Dielectric losses increased as increasing the frequency. The switching voltage was 5V of the BST thin films at the substrate temperature of $500^{\circ}C$.

The photoisomerization of functional polyimide was investigated in the various temperatures and UV(360nm) & visible(450nm) light irradiation. The absorption spectrum of azobenzene containing polyamic acid in a mixture of N,N-dimethylacetamide and benzene(1:1 by volume) solution was induced photoisomerization by UV and visible light irradiation. The absorption spectrum of LB films are also induced photoisomerization by UV and visible light irradiation.

본 연구에서는 $BaTiO_3$를 기본조성으로하는 반도성 세라믹스인 PTC 써미스터에 $Nb_2O_5$을 미량 첨가하여 미세구조 및 PTCR의 전기적 특성에 대해서 연구하였다. 또한 복소 임피던스 측정을 통하여 $Nb_2O_5$ 첨가에 따른 grain, grain boundary 저항변화에 대해서도 고찰하였다. $(Ba_{0.9}Sr_{0.05}Ca_{0.05})TiO_3-0.01SiO_2-0.001MnCO_3$를 기본조성으로 하여 $Nb_2O_5$ 첨가량을 $0.15{\sim}0.2mol%$까지 변화시켰으며 소결조건은 소결온도 $1350^{\circ}C$, 2h 유지하였으며 냉각속도는 $100^{\circ}C/h$로 하였다 첨가된 Nb의 양이 증가할수록 grain의 크기는 점차로 작아졌으며 상온저항과 peak 저항이 함께 증가하였다. 0.15mol% 첨가된 시편의 경우 상온저항은 $19[\Omega]$이었으며 peak 저항은 $5{\times}10^6[{\Omega}]$정도가 되었다.

In this work, we have systematically studied the effects of filtration and the defect trend as a function of polished wafer count using various filters in Inter-Metal Dielectric(IMD) CMP. The filter Installation in CMP polisher makes defect reduced after IMD CMP. As a result of formation micro-scratches, it shows that slurry filter plays an important role in determining consumable pad lifetime. The filter lifetime is dominated by the defects. We have acknowledged slurry filter lifetime is fixed by the degree of generating defects.

We can classify the scratches after CMP process into micro-scratch and macro-scratches according to the scratch size, scratch intensity and defect map, etc. The micro-scratches on wafer after CMP process are discussed in this paper. From many causes, major factor that influences the formation of micro-scratch is known as particle size distribution of slurry.(1) It is indefinite what size or type of particle can cause micro-scratch on wafer surface, but there is possibility caused by large particle over 1um. The best way for controlling these large particle to inflow is to use the slurry filter on POU(Point of user). But the slurry filter(especially, depth-type filter) has sometimes the problem which makes more sever micro-scratches on wafer surface after CMP. We studied that depth-type slurry filter has what kind of week-points and the number of scratch could be reduced by lowering slurry flow rate and by using high spray bar which sprays DIW on polishing pad with high pressure.

This paper describes the fabrication and performance characterizations of the CIGS$(CuInGaSe_2)$ solar cells and its prototype module. The CIGS cell and module were fabricated on the sodalime glass$(5\times5cm^2)$ by the well known three stage co-evaporation and series connection followed by patterning process. respectively. The developed minimodule with active area of $14.7cm^2$ showed 6.0% solar efficiency($V_{oc}$=3.2V, $I_{sc}$=79.8mA, FF=34.6%) in AM 1.5 condition.

The possible origins of instabilities observed in high-voltage p-i-n devices were investigated. It was concluded that the temporary changes of electrical characteristics may be due to the changes of the physical parameters of gold acceptor, while the permanent changes are due to process-related factors.

To investigate invar alloy as a core material for increased capacity over-head transmission line which have high strength and low thermal expansion coefficient, hardness and thermal expansion coefficient of Fe-Ni-Co alloy have been studied. It is necessary that invar alloy have low thermal expansion coefficient and high strength for increased capacity over-head transmission line. In this paper. we tried to find out the effect of Ni and Co which has ferromagnetic properties and high saturation magnetization. It was found that Ni decrease thermal expansion coefficient and hardness, Co decrease thermal expansion coefficient but increase hardness in Fe-xNi-Co system. In Fe-(29-x)Ni-Co system, the material has no low thermal expansion properties substituting Co instead of Ni in concentration range of $1\sim7$%Co.

The purpose of this study is to manufacture and test a thermoelectric generator which converts unused energy from close-at-hand sources, such as garbage incineration heat and industrial exhaust, to electricity. A manufacturing process and the properties of a thermoelectric generator are discussed before simulating the thermal stress and thermal properties of a thermoelectric module located between an aluminum tube and alumina plate. It was shown that the electric voltage of a thermoelectric generator with 128 thermoelectric modules was 4.8 voltage per Kelvin, and the longitudinal stresses of an aluminum tube with a two-point constrained tube could be released more than those with a one-point constrained tube.

In this paper, we report a high quality GaN films with high hole concentrations and low resistivities without post growth treatment using a GAIVBE system equipped with a home-made inductively coupled RF plasma source. The room temperature hole concentrations obtained were $5{\times}10^{17}{\sim}1.6{\times}10^{19}cm^{-3}$, and the mobilities were $2.5{\sim}8cm^2/Vs$. Also we have grown high quality n-type GaN films with the range of electron concentrations of $1.4{\times}10^{17}{\sim}4.7{\times}10^{19}cm^{-3}$ and the mobilities of $180{\sim}410cm^2/Vs$.

This paper was described electrical characteristics of Metal/GaN contact for application of GaN thin films. The lowest contact resistivity was $1.7\times10^{-7}[\Omega-cm^2]$ at Ti/Al Structure. Mean while, GaN MESFETs have been fabricated with a 250 nm thick channel on a high resistivity GaN layer grown by GAIVBE system. For a gate-source diode reverse bias of 35 V, the gate leakage current was $120{\mu}A$. From the data, we estimate the transconductance for our GaN MESFET to be 25 mS/mm.

The ${\beta}-SiC+ZrB_2$ ceramic composites were hot-press sintered and annealed by adding 1, 2, 3wt% $Al_2O_3+Y_2O_3$(6 : 4wt%) powder as a liquid forming additives at $1950^{\circ}C$ for 4h. In this microstructures, no reactions were observed between $\beta$-SiC and $ZrB_2$, and the relative density is over 90.79% of the theoretical density and the porosity decreased with increasing $Al_2O_3+Y_2O_3$ contents. Phase analysis of the composites by XRD revealed of $\alpha$-SiC(6H, 4H), $ZrB_2$, $Al_2O_3$ and $\beta$-SiC(15R). Flexural strength showed the highest of 315.46MPa for composites added with 3wt% $Al_2O_3+Y_2O_3$ additives at room temperature. Owing to crack deflection and crack bridging of fracture toughness mechanism, the fracture toughness showed the highest of $5.5328MPa{\cdot}m^{1/2}$ for composites added with 2wt% $Al_2O_3+Y_2O_3$ additives at room temperature.

The electrical conductive mechanism and temperature dependence of electrical resistivity of ${\beta}-SiC+ZrB_2$ composites with $Al_2O_3+Y_2O_3$ contents were investigated. The electrical resistivity of hot-pressed composites was measured by the Pauw method from $25^{\circ}C$ to $700^{\circ}C$. The electrical resistivity of the composites showed the PTCR(Positive Temperature Coefficient Resistivity) and follow the electrical conduction model for a homogeneous mixture of two kind of particles with different conductivity. Also, the electrical resistivity versus temperature curves indicate the formation of local chains of $ZrB_2$ particles.

AlN thin films were fabricated by sputter for the application of MIS device with Al/AlN/Si structure. We controled that sub-temperature room-temperature. Sputtering pressure 5 mTorr, flow ratio Ar:$N_2$=1:1(4sccm:4sccm), and appended hydrogen gas $0{\sim}5%$. AlN thin films thickness fabricated to maintain $2700{\AA}$ time control. Before the experiment remove to the contaminated material use the Ultrasonic every 10 minute use the acetone and ethanol, then use the HF remove oxide-substance at 10 second. To analyze characteristic of the $H_2$ gas addition period, C-V and I-V characteristic make and experiment $H_2$ gas at addition period progressive capability of I-V and C-V characteristic.

The purpose of this study is to establish the design theory of a DR ceramic bandpass filter used for basestations and to research on the design theory of bandpass filter. The design procedure is circuit parameters and structural parameters will be derived. It was observed that the filter characteristics at the simulations.

At the study, it has fabricated Al/AlN/GaAs MIS capacitor using DC reactive sputtering method. To applicate GaAs semiconductor in a MIS devices, investigated capability of AIN thin film by the insulator layer. Also it has investigated inversion of C-V characteristics by addition of the hydrogen(hydrogen concentration: 5%) and it has investigated that leakage current has $10^{-8}A/cm^2$ for 1 MV/cm breakdown electric field of I-V characteristics.

This paper describes on the growth of a ${\mu}c$-Si:H film on low cost substrate like glass by Hot Wire CVD method. The ${\mu}c$-Si:H film, prepared in 50mTorr pressure, $1800^{\circ}C$ wire temperature, and $H_2/SiH_4$ 10 showed three clear peaks. (111), (220), and (311) in X-ray spectroscopy. The crystallite size and crystalline volume fraction, calculated from Raman spectroscopy, was about 6nm and 70%, respectively. The FTIR transmission spectra of the film showed a different absorption peak with a-Si:H film around $2000-2100cm^{-1}$.

In this paper, the current and voltage properties on the gate oxide film due to the variation of thickness are studied. The specimen is used for n-ch power MOSFET. It is shows the leakage current and current density characteristics due to the applied electric field when the oxide thickness is each $600[\AA],\;800[\AA]$ and $1000[\AA]$, respectively. We known that the leakage current is a little higher when the voltage as reverse bias contrast with forward bias in poly gate is applied. In order to experiment for AC properties is measured for capacitance characteristics. It is confirmed that the value of input capacitance have been a lot of influenced on $SiO_2$ thickness contrast with the value of output capacitance.

A copper-tungsten sintered alloy(Cu-W) has been friction-welded to a tough pitch copper (Cu) in order to investigate friction weldability. The tensile strength of the friction welded joint was increased up to 87% of the Cu base metal under the condition of friction time 1.0 see, friction pressure 40MPa and upset pressure 100MPa, upset time 5.0 sec. And it is related to upset pressure rather than friction time. Mixed layer was formed in the Cu adjacent weld interface and W particles which were included in mixed layer could induce fracture in the Cu adjacent to the weld interface. Thickness of mixed layer was reduced as upset pressure increase.

Trench-Gate structures are proposed to improve the breakdown voltage of LDMOS as well as the second breakdown under forward biased gate. Two dimensional device simulator PISCES II has been used to explain the effects of the drift layer thickness on the breakdown voltage of the conventional LDMOS and Trench Gate LDMOS in terms of potential contour lines. The Trench Gate structure has shown improvements in the breakdown voltage by about 44% and 84% for $V_G$=0 V and $V_G$=15 V respectively.

본 연구는 우리 나라 물공급의 60% 이상을 담당하고 있는 한국 수자원 공사의 수자원 관리 설비의 방식에 관한 연구이다. 특히 수자원 관리 시설의 대부분이 철구조물로 외부에 노출되어 있거나, 해수와 담수에 동시에 접해있기도 하며 끊임없이 화학약품에 영향을 받고 있기도 하다 이러한 매우 열악한 환경 하에 있는 대부분의 설비 및 철구조물들은 부식이 쉽게 되어 부식으로 인한 시설관리 및 경제적 피해가 발생하게 된다. 수자원 공사는 여러 해 동안 설비 보전을 위해 부식에 관한 많은 연구들을 수행하고 있으며 그 중 도장을 통한 설비의 방식을 주로 시행하고 있으나 이런 도장 방식이 체계적으로 정리되어 있지 않고 또한 도장 방식의 수명이 길지 못하므로 주기적으로 재시공하여야 한다는 단점이 있다. 알루미늄 코팅 방식은 알루미늄이 철 보다 부식 전위가 낮아 부식이 잘 진행되어 철 구조물의 부식을 방지하는 희생 양극 특성이 있다. 그러나 알루미늄 도장의 경우 시공 단가가 비싼 단점이 있어 시공비를 줄이기 위하여 알루미늄 도장전에 철 구조물의 표면을 전처리하는 공정을 개선하여 총 시공비의 80%를 점하는 전처리 비용을 절감하여 경제적인 도장 방법을 조사하고자 하였다.

Carrier lifetime in silicon power devices caused switching delay and excessive power loss at high frequency switching. We studied transient turn-on/turn-off transient characteristics of electron irradiated and proton irradiated silicon pn junction diodes. Both the electron and proton irradiation of power devices have already become a widely used practice to reduce minority carrier lifetime locally[1]. The sample is n+p junction diode, made by ion implantation on a $20\Omega.cm$ p-type wafer. We investigated turn-on/turn-off transient & breakdown voltage characteristics by digital oscilloscope. Our data show that proton irradiated samples show better performance than electron irradiated samples.

Pentacene thin films are a component for active layer of Organic thin film transistors. Pentacene film was deposited by Organic Molecular Beam Deposition(OMBD) and electrodes were deposoted by vacuum evaporation. Electrical characterization of Pentacene films were measured by two probe methods, as the results. The Au/Pentacene/Al contact is Ohimic contact. Band diagram of pentacene films were measured by UV-spectrum and Cyclic-Voltammetry method.

The effects of the local lifetime control on the characteristics of IGBT are investigated using the 2-dimensional device simulator, MEDICI. Many lumped resistive turn-off simulations are carried out to analyze the effects of the minority carrier lifetime, the width, and the position of the region with a reduced local minority carrier lifetime. As a result of these simulations, it is concluded that the on state voltage drop$(V_{CE,SAT})$ is only slightly increased while the switching behavior is greatly improved if the low lifetime region is properly set. And these results are compared with IGBTs having uniform lifetime.

The analysis of hole injection efficiency at the p+/n-drift layer junction in non-punchthrough IGBT structure is presented. This analysis takes into account carrier concentration variations by conductivity modulation. Good agreement between this analysis and simulation is found over a wide range of carrier lifetime and current density. The proposed analytical model of the hole injection efficiency as a function of collector width, collector concentration has been verified by device simulator, ATLAS.

We prepared the $Ag[100\AA])/Sb_2S_3[3000\AA]$ films using the thermal evaporator. The films were exposed by the blue-pass filtered mercury lamp and the polarized He-Ne laser. We have investigated the dependence of the induced optical energy with Ag-doping and have observed the transmittance variation near the optical absorption edge with the light source. It was shown that the energy gap of this thin film was largely changed by exposing He-Ne laser, the light source of the near energy gap of this thin film. It is because of the structural change from Ag-doping. It is investigated that the dissolution, the diffusion, and the field effect of the Ag thin film generate the Ag spatial distribution.

Effect of IDT structures on the frequency response of the SAW device are investigated. Various types of IDTs, such as MSC(multistrip-coupler), double split, reflector, and ground line. are designed and patterned on the widely used Y-Z cut LN$(LiNbO_3)$ substrate. Center frequencies, band widths, and insertion losses are measured and compared. Invalidity of the conventional model based on the impulse response model is also discussed.

We have investigated the electrical characteristics of the poly-Si TFT's with the novel gate insulator structure. The gate insulator makes the offset region to reduce leakage current, and the electrical characteristics are obtained by employing Virtual Wafer Fab. simulator. As increases the gate insulator thickness above the offset region of this structure from $0{\AA}$ to $2000{\AA}$, the OFF state current at $V_G$=10V decrease by two orders in magnitude while ON state current doesn't decrease significantly. ON/OFF current ratios for conventional device and the proposed device with $2000{\AA}$ gate insulator thickness are $1.68{\times}10^5$ and $1.07{\times}10^7$, respectively.

본 연구에서는 RF 마그네트론 스퍼터링법으로 CoNbZrPd 비정질 연자성 박막을 제조하여 Pd의 첨가 효과와 자장중 열처리에 의한 특성 변화에 대해 연구하였다. Pd가 4.34 at% 첨가된 $Co_{87.56}Nb_{6.45}Zr_{1.65}Pd_{4.34}$ 박막은 비정질 구조이며 Pd 첨가에 의해 보자력은 0.54 Oe으로 감소하였으며, 이방성 자계는 10.45 Oe로 Pd를 첨가하지 않은 CoNbZr 비정질 박막 보다 특성이 향상되었다. $Co_{87.56}Nb_{6.45}Zr_{1.65}Pd_{4.34}$ 비정질 박막은 $400^{\circ}C$까지 비정질 상을 유지하고 있지만, 연자기 특성이 열화되어 보자력이 증가하고 이방성자계가 급격히 감소하였지만, 포화 자화는 크게 변화지 않았다.

Monolayers of azo-benzene group containing fatty acids(8A5H) were made by spreading and compressing on the water surface. These monolayers were optically stimulated by illuminating the lights of 365[nm] and 450[nm] from X-non lamp, and the structural changes of the molecules were measured by the displacement current method. Also, the dynamic behaviors of these monolayers were measured by the $\pi-A$ isotherms when changing the temperatures of the water surface. As results, when the monolayers were stimulated by 365[nm] light, the positive currents which were generated by the structural changes from trans to cis were measured. But the negative currents of the structural changes from cis to trans were too weak to detect. When the temperatures of the water surface were increased, surface pressures of the monolayers increased early because of the thermal activations of the molecules, and the double liquid film phase were disappeared upon $40[^{\circ}C]$.

The dynamic behavior so fsaturaed-fatty acids $C_{16},\;C_{18},\;C_{20}$ and 8A5H were measured by displacement current method when a barrier was compressed and expanded. I-A, $\pi-A$ isotherms of $C_{16},\;C_{18},\;C_{20}$ were similar, but $C_{20}$ was bad relatively. 8A5H showed the form of double liquid films and had an reversible reaction when a barrier was compressed and then expanded.

This work characterized in terms of the physical properties of heavy elements as reduction filter in the diagnostic radiology. From the results of experimental evaluation, it was founded that in the case of the Ho filter, the variety of X-ray property with kVp was less than those of Ba, Cu and Al. And the ratio of transit-dose to surface and the load of X-ray tube were increased in the order of Al, Ba, Cu and Ho. The contrast of X-ray image showed the higher value in the order of Cu, Al, Ba and Ho.

Conductive Langmuir-Blodgett(LB) films have recently attracted much interest from the viewpoint of ultrathin film conductors at the molecular level. The result shows that the Maxwell-displacement-current (MDC) measuring technique is useful in the detection of phase-transitions over the entire range of molecule areas. In this parer, electrical properties of PBDG Langmuir(L) films were investigated using a displacement current measuring technique with pressure stimulation. Displacement current was generated When the Spread volume $150{\mu}{\ell}$ and compression velocity was about 30, 40, 50 mm/min. In the result, it is known that current is generated of higher current peek as compression velocity become faster.

The dielectric constant of a monolayer on a material surface was calculated with consideration of the local field acting on polar molecules with a permanent dipole moment, and the interaction working between the molecules and a material. It is revealed that the dielectric relaxation time r of monolayers in the isotropic polar orientational phase is determined using a linear relationship between the monolayers compression speed a and the molecular area. The dielectric relaxation time of phospholipid monolayers was examined on the basis of analysis developed here.

Ferroelectric lead zirconate titanate(PZT) thin films were prepared on various bottom electrodes by rf magnetron sputtering methode. The structural phase and surface morphology of the PZT thin films were largely affected by the bottom electrodes. P-E curves of PZT thin films deposited on Pt. $RuO_2$ and Ru/$RuO_2$ bottom electrode showed typical P-E hysteresis loop. The measure values of $P_r,\;E_c$ of the Ru/PZT/Ru/$RuO_2$ capacitor were $16.9{\mu}C/Cm^2$, 140kV/ cm, respectively. The Ru/PZT/Ru/$RuO_2$ capacitors were fatigue free uP to nearly $10^9$ switching cycle but Pt/PZT/Pt capacitor showed 34% degradation uP to $10^9$ switching cycle.

This paper presents characteristics of CrN thin-film strain gauges, which were deposited on glass by DC reactive magnetron sputtering in an argon-nitrogen atmosphere(Ar-$(5{\sim}25%)N_2$). The physical and electrical characteristics of these films investigated with the thickness range $3500{\AA}$ of CrN thin films, annealing temperature $(100{\sim}300^{\circ}C)$ and annealing $(24{\sim}72hr)$. The optimized condition of CrN thin-film strain gauges were thickness range of $3500{\AA}$ and annealing condition($300^{\circ}C$, 48 hr) in Ar-10 %$N_2$ deposition atmosphere. Under optimum conditions, the CrN thin-films for strain gauge is obtained a high resistivity, ${\rho}=1147.65{\mu}{\Omega}cm$, a low temperature coefficient of resistance, TCR=$-186ppm/^{\circ}C$ and a high temporal stability with a good longitudinal, 11.17. And change in resistance after annealing for the CrN thin-films were quitely linear and stable.

Dicumyl peroxide (DCP) is used for crosslinking agent in general. And the correlation between polyethylene and DCP is significant in particular radiation environment. On this paper, The effects on $Co^{60}{\gamma}$-ray irradiation of polyethylene doped dicumyl peroxide(DCP) were investigated. We experimented on electrical properties as following; electrical tree inception and growing type for applying AC step voltage, AC breakdown strength, volume resistivity, capacitance and dissipation factor at high frequency as increasing dosage. Also, chemical analysis was performed TGA, gel content.