Proceedings of the KIEE Conference (대한전기학회:학술대회논문집)

The Korean Institute of Electrical Engineers (대한전기학회)
권호 표지

A Study on Etching Mechanism of (Ba,Sr)$TiO_3$ in Ar/$CF_4$ High Density Plasma

Ar/$CF_4$ 고밀도 플라즈마에서(Ba,Sr)$TiO_3$ 박막의 식각 메카니즘에 관한 연구

  • Kim, Seung-Bum (Department of Electrical Engineering, Chung-Ang University) ;
  • Kim, Chang-Il (Department of Electrical Engineering, Chung-Ang University)
  • Published : 1999.07.19
Download PDF
⟨ Previous Next ⟩

Abstract

In this study, (Ba,Sr)$TiO_3$ thin films were etched with a magnetically enhanced inductively coupled plasma (MEICP) as a function $CF_4$/Ar gas mixing ratio. Experimental was done by varying the etching parameters such as rf power, dc bias and chamber pressure. The maximum etch rate of the BST films was $1700{\AA}$/min under $CF_4/(CF_4+Ar)$ of 0.1, 600W/350V and 5 mTorr. The selectivity of BST to Pt and PR was 0.6, 0.7, respectively. X-ray photoelectron spectroscopy (XPS) studies shows that there are surface reaction between Ba, Sr, Ti and C, F radicals during the (Ba,Sr)$TiO_3$ etching. To analysis the composition of surface residue remaining after the etching, films etched with different $CF_4$/Ar gas mixing ratio were investigated using XPS.

Keywords