The gravimetric determination of scandium by di-(2-ethylhexyl)phosphate(DEHPA) as a precipitant and the mole ratio of Sc-DEHPA arecipitation obtained in ethanol medium have been investigated. Scandium can be determined by gravimetric method of precipitation of Sc-DEHPA and the mole ratio of Sc-DEHPA is found as 1 :2 in ethanol medium.

p-Fluorophenyl bicyclo[3.2.l]oct-6-en-2-yl cation (3) prepared in $FSO_3H-SO_2-CIF$ solution at -90$^{\circ}$C and examined by fluorine-19 nmr spectroscopy. The nmr data give a clear evidence for the formation of a stabilized ${\pi}$-bridging cation species in superacids. The degree of ${\pi}$delocalization in this cation is found to be inferior to the onset of nonclassical stabilization in 2-norbornenyl cation.

The adsorption model in reversed phase liquid chromatography has been critically examined. It has been found that use of the Everett type surface activity coefficient for the solute in the stationary phase is not useful to study the retention characteristics of a nonpolar solute. We suggest a modified model. In this model it is assumed that the displaced modifier molecules from the surface monolayer do not transfer into the bulk mobile phase but stick to the nonpolar solute which has displaced them. In addition, we prefer to use an apparent stationary phase activity coefficient of the soluie instead of the Everett type activity coefficient. This modified adsorption model well explains the mobile and stationary phase effects on the solute retention upon variation of mobile phase composition.

The preparation of $YBa_2Cu_4O_8$ thick film on Ag substrate by electrophoretic deposition was directly studied. Electrophoretic deposition was carried out in solution, which was composed of presintered $YBa_2Cu_4O_8$ powder, sodium, and 2-propanol as a solvent. The deposited thick films were heat-treated in $O_2$ at 815$^{\circ}$C for 12 hours and at 450$^{\circ}$C for 12 hours. We succeeded in obtaining superconducting $YBa_2Cu_4O_8$ films on Ag substrate. Even though the chemical reactions at the $YBa_2Cu_4O_8$/Ag interface occurred in the range of 10 ${\mu}$m, superconductivity was not depressed. The thickness of the films was in the range of 60-80 ${\mu}$ m. The characteristics of the films were examined by electric resistance measurements, X-ray diffraction, and SEM observations.

A simple analytical method that allows direct monitoring of small amount of CO$_2$ in a CO$_2$ discharge tube which utilizes the optoacoustic detection technique is described. The dependence of the optoacoustic signal on the mole fraction of CO$_2$ was shown that the system responded linearly to the amount of CO$_2$ present in the miniature discharge cavity equipped with Cu electrodes. It was also found that fraction of dissociated CO$_2$ varied from 14 to 37% of the initial concentration which depended on the current and the pressure in the tube. This simple and easy detection method has proven to possess the practical advantages over the conventional systems for the study of CO$_2$ laser electrodes.

Weakly electron withdrawing bromine substituted poly(2-bromo-1,4-phenylenevinylene) (PBrPV) was synthesized th-rough water-soluble precursor method. The linear and nonlinear optical properties of PBrPV were compared with those of poly(1,4-phenylenevinylene) (PPV). The third-order nonlinear optical susceptibility, X^{(3)}$, was measured by using third-harmonic generation (THG) technique at 1907 nm, fundamental wavelength. The calculated $X^{(3)}$ values of PPV and PBrPV were 3${\times}$ 10$^{-12}$ esu and 2${\times}$10$^{-12}$ esu, respectively.

The laser-assisted chemical vapor deposition (LCVD) is described, by which the growth of single-phase GaN epitaxy is achieved at lower temperatures. Trimethylgallium (TMG) and ammonia are used as source gases to deposit the epitaxial films of GaN under the irradiation of ArF excimer laser (193 nm). The as-grown deposits are obtained on c-face sapphire surface near 700$^{\circ}$C, which is substantially reduced, relative to the temperatures in conventional thermolytic processes. To overcome the lattice mismatch between c-face sapphire and GaN ad-layer, aluminum nitride(AlN) is predeposited as buffer layer prior to the deposition of GaN. The gas phase interaction is monitored by means of quadrupole mass analyzer (QMA). The stoichiometric deposition is ascertained by X-ray photoelectron spectroscopy (XPS). The GaN deposits thus obtained are characterized by X-ray diffractometer (XRD), scanning electron microscopy (SEM) and van der Pauw method.

The x values of nonstoichiometric chemical formula, $Tb_4O_{7-{\delta}}\;or\;TbO_{1.5+x}$, have been determined in temperature range from 600$^{\circ}$C to 1000$^{\circ}$C under oxygen partial pressure of 2 ${\times}$ 10$^{-1}$ to 1 ${\times}$ 10$^{-5}$ atm by using quartz microbalance. The x values varied from 0.0478 to 0.1964 in the above conditions. The enthalpy of formation for x' in TbO$_{1.5+(0.25-xo-x')}$, ${\delta}H_f$, was 4.93-3.40 kcal mol$^{-1}$ and the oxygen partial pressure dependence was -1/8.80∼-1/11.8 under these conditions. The electrical conductivity of the $TbO_{1.5+x}$ was measured under the same conditions and the values varied from about 10$^{-3}$ to 10$^{-6}\;{\Omega}^{-1}cm^{-1}$ within semiconductor range. The activation energies for the conduction increase with oxygen partial pressure from 0.83 to 0.89 eV under the above conditions. The l/n values obtained from the oxygen pressure dependence of the conductivity are 1/4.4-1/5.2. The conduction mechanism, defect structure, and other physical properties of the oxides are dicussed with the x values, the electrical conductivity values, and the thermodynamic data.

$(NH_4)_{4.5}[H_{3.5}{\alpha}-PtMo_6O_{24}]{\cdot}1.5\;H_2O(A),\;(NH_4)_4[H_4{\beta}-PtMo_6O_{24}]{\cdot}1.5\;H_2O(B),\;and\;K_{3.5}[H_{4.5}{\alpha}-PtMo_6O_{24}]{\cdot}3\;H_2O(C)$ have been synthesized and their molecular structures have been also determined by single-crystal X-ray diffraction technique. The space groups, unit cell parameters, and R factors are as follows: Compound A, monoclinic, $A_{2/a}$, a= 19.074 (3), b=21.490 (3), c=15.183 (2) ${\AA};\;{\beta}$=109.67 (1) ${\AA}$; z=8; R=0.075($IF_0I>4{\sigma}(IF_0I);$ Compound B, triclinic, P$bar{1}$, a=10.776 (2), b=15.174 (4), c=10.697 (3) ${\AA};\;{\alpha}$ =126.29 (2), ${\beta}$=111.55 (2), ${\gamma}$=93.18 (2) ${\AA}$; Z=2; R=0.046($IF_0I>3{\sigma}(IF_0I);$): Compound C, triclinic, Pl, a=12.426 (2), b=13.884 (2), c=10.089 (1) ${\AA}$; ${\alpha}$=102.59 (2), ${\beta}$=110.73 (1), ${\gamma}$=53.93 (1) ${\AA}$; Z=2; R=0.074 ($IF_0I>3{\sigma}(IF_0I)$. Compounds A and C contain the well-known Anderson structure (planar structure) heteropoly oxometalate having approximate $bar{3}_m(D_{3d})$ symmetry, while compound B contains the bent structure heteropoly oxometalate having appproximate $2_{mm}(C2_v)$ symmetry. The bent structure and the planar one are geometrical isomers. These compounds are rot only novel heteroply molybdates containing platinate(IV) but also the first example of geometrical isomerism in the hexamolybdoheteropoly oxometalates. That isomerization surprisingly occurred because of the change of only 0.5 non-acidic hydrogen atom attached to the polyanion such as $[H_{3.5}{\alpha} -PtMo_6O_{24}]^{4.5-}{\to}[H_4{\beta}-PtMo_6O_{24}]^{4-}{\to}[H_{4.5}{\alpha} -PtMo_6O_{24}]^{3.5-}$. It seems that the gradual protonation of the polyanion plays an important role in that isomerism. These heteropolyanions form dimers by strong hydrogen bonds between two heteropolyanions in the respective crystal system.

We present a theoretical study of the non-symmetrical A/BC polymeric system. The polymer blends consist of two phases, a pure polymeric phase A on one side and a mixture of polymers B as a compatibilizer and C on the other. The adsorption of homopolymer B to the interface improves the interfacial adhesion between two phases. By employing the functional integral techniques, we derive the mean-field equations and solve them numerically to obtain the interfacial properties including the concentration profiles in the limit of infinite molecular weight for the polymers. Thecalculations of the interfacial properties are performed for typical values of the Flory X parameters and the volume fraction of polymer B in the asymptotic mixture phase. The interfacial adsorption of polymer B and the degrees of the specific interaction between the polymers play an important role in modification of the interfacial properties.

A comparison study on asymmetric borane reduction of ketoxime ethers and N-substituted ketimines possesing C = N double bond mediated by the selected chiral oxazaborolidines (1-6) was investigated. Thus, an aromatic ketoxime O-alkyl ether acetophenone oxime O-methyl ether was reduced to the corresponding amine (1-phenylethylamine 8a) with optical yields, such as 58% ee with 1, 86% ee with 2, 3% ee with 3, 99% ee with 4, 60% ee with 5, and 73% ee with 6. However, the reduction of an aliphatic ketoxime derivative 2-heptanone oxime O-methyl ether provided low optical inductions (7-13% ee). For ketoxime O-trimethylsilyl ethers, the reduction of acetophenone O-trimethylsilyl ether afforded 8a with optical yields which were 90% ee with 1, 40% ee with 2, 2% ee with 3, 62% ee with 4, 5% ee with 5, and 60% ee with 6. The reduction of 2-heptanone O-trimethylsilyl ether also gave the product amine with low optical yields (10-40% ee). In the case of N-substituted ketimines, the reduction of acetophenone N-phenylimine afforded the corresponding amine with 79% ee, 78% ee, 9% ee, 73% ee, 78% ee and 67% ee using 1, 2, 3, 4, 5, and 6, respectively, whereas low optical inductions (5-18% ee) for 2-heptanone N-phenylimine were achieved.

Digital simulation program for one-dimensional geometric systems of electrochemical phenomena was developed. The accuracy of the digital simulation is discussed by comparing with the known solutions. Applying this program to the linear sweep voltammetry at a planar electrode for the electrode reaction, 0 + ne${\to}$R, the accurate current functions for the reversible and totally irreversible charge transfer systems were obtained. Comparing these current functions with the simulated voltammograms for various other values of ${\alpha}$ (0.1 to 1.0) and ${\Lambda}\;(10^{-5}\;to\;10^5)$, the revised zones that are different from those proposed by Matsuda and Ayabe for the reversible and totally irreversible systems are proposed. For ${\alpha}{\ge}$0.1 the reversible zone is in ${\Lambda}{\ge}10^{1.7}$ and the totally irreversible zone is in ${\Lambda}{\le}10^{-1.7}$, where ${\Lambda}=k^{\circ}/ [D_o^{1-{\alpha}}D_R^{\alpha}(nF/RT)v]^{1/2}$.

The nonstoichiometric chalcogenides with NaCl-type structure were prepared and the physical and structural properties were studied. The homogeneous range and the structural change were studied based on X-ray powder diffractions using Rietveld-type full-profile fitting technique. Wide homogeneous ranges were observed in Y-S and Y-Se systems, and relatively narrow homogeneous ranges were observed in Yb-S and Yb-Se systems. Both in $Yb_{1-x}S\;and\;Yb_{1-x}Se$, a vacancy ordering transition occurred in (111) plane direction. The ordered superstructure had cubic symmetry(Fm$\bar{3}m) with doubled unit cell "a" parameter compared to the original NaCl-type. The superlattice developed in a continuous second-order transitiion was characterized by the reduced waved vector k= $(a^*+b^*+c^*)/2$. Y-S system had metallic, and YSe, YbSe system had semiconducting properties in their homogeneous ranges. It was observed that the change of electronic transport properties in extended homogeneous range did not depend on the relativeratio of metal to nonmetal, but on the quantities of vacancies.

Rare earth elements (REE) were individual separated by applying the gradient elution via HPLC using ${\alpha}-hydroxyisobutyric$ acid (HIBA) as an eluent. However, the overlap of Y and Dy peaks was too severe to obtain the resolution of these two peaks. The target transformation factor analysis (TTFA) was applied to resolve the elution peaks of Y and Dy. [A]$_{raw}$ formed from the absorbances of mixed solution was factor analyzed. The abstract factor analysis(AFA) was used to determine the number of components that contributed to the poorly resolved peaks. The error theory in the AFA showed that the number of components was 2. The test vectors which correspond to pure component were selected from the standard solutions of Y and Dy. TTFA was accomplished by target testing. The results showed that the resolution of two peaks as well as the determination of Y and Dy were possible by the factor analysis.

The organometallic chemical vapor deposition of single precursors, $[Me_2Al({\mu}-NHR)]_2\;(R=^iPr,\;^tBu)$, for alumininum nitride thin films has been investigated to evaluate their poroperties as potential precursors. In chemical vapor deposition processes the gas phase products scattered from a Ni(100) substrate were analyzed by mass spectrometry and the deposited films were characterized by X-ray photoelectron spectroscopy (XPS). The optimum temperatures for the formation of AlN films have been found to be between 700 K and 800 K. Carbon contamination of the films seems to be attributed mainly to the methyl groups bonded to the aluminum atoms. It is apparent that $^tBu$ group is better than $^iPr$ group as a substituent on the nitrogen atom of the single precursors for the AlN thin film formation.