Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference (한국전기전자재료학회:학술대회논문집)
The Korean Institute of Electrical and Electronic Material Engineers
- Annual
1999.05a
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The retention and fatigue properties of ferroelectric LiNbO
$_3$ thin films were studied. Metal-ferroelectric-semiconductor(MFS) devices by using rapid thermal annealed LiNbO$_3$ /Si structures were successfully fabricated and demonstrated nonvolatile memory operations of the MFS devices. The I$_{D}$ -V$_{G}$ characteristics of MFSFET\`s showed a hysteresis loop due to the ferroelectric nature of the LiNbO$_3$ thin film. The ferroelectric capacitors showed practically no polarization degradation up to about 10$^{10}$ switching cycles when subjected to symmetric bipolar voltage pulse (peak-to-peak 6V, 50% duty cycle) in the 500kHz. The retention properties of the LiNbO$_3$ thin films were quite good up to about 10$^{3}$ s . s . -
In order to remove minority carries of the base region at changing signal in conventional bipolar logic circuit, we made transistor which is composed of NPN transistor shortened buried layer under the Base region, PNP transistor which is merged in base, epi layer and substrate. Also the Ring-Oscillator for measuring transmission time-delay per gate was designed as well. In the result, we get amplitude of logic voltage of 200mV, the minimum of transmission delay-time of 211nS, and the minimum of transmission delay-time per gate of 7.26ns in AC characteristic output of Ring-Oscillator connected Gate.
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The I-V characteristics of the n-channel offset gated poly-Si TETs have been systematically investigated in order to analyse the effects of offset region. The on currents are reduced due to the series resistance by the offset length and there is no kink phenomenon in offset devices. The off currents of the offset gated TFTs are remarkably reduced to 10
$^{-12}$ A independent of gate and drain voltage because the electric field is weakened by the increase of the depletion region width near the drain region. It is shown that the offset regions behave as a series resistance and reduce lateral and vertical electric field. -
본 연구에서는 Pt/f4-SiC Schottky barrier diodes(SBDs)의 소자 성능향상과 미세구조와의 상관관계를 규명하였다. 다른 열처리 온도구간에 따른 금속/SiC 계면의 미세구조 평가는 X-ray scattering법을 사용하여 분석하였다. 소자의 역 방향 특성은 열처리 온도가 증가함에 따라 저하되었다. As-deposited와
$850^{\circ}C$ 온도에서 열처리된 소자의 최대 항복전압은 각각 1300 V와 626 V 이었다. 그러나, 소자의 순방향 특성은 열처리 온도가 증가함에 따라 향상되었다. X-ray scattering법으로>$650^{\circ}C$ 이상의 열처리 온도에서는 Pt/SiC 계면에서 Pt-silicides가 형성되었고, 이러한 Silicides의 형성이 Pt/SiC 계면의 평활도를 증가시킨 원인이 됨을 보였다. SBDs의 순방향 특성은 열처리 과정동안 Pt/SiC 계면에서 형성된 silicides의 결정성에 강하게 의존함을 알 수 있었다. -
In this study, molybdenum thin films were etched with the various Cl
$_2$ /(Cl$_2$ +SF$_{6}$ ) gas mixing ratio in an magnetically enhanced reactive ion etching(MERIE) by the etching parameter such as rf power of 185 watts, chamber pressure of 40 mTorr and B-field of 80 gauss. The etch rate was 150 nm/min under Cl$_2$ /(Cl$_2$ +SF$_{6}$ ) gas mixing ratio of 0.25. At this time, the selectivity of Mo to SiO$_2$ , photoresist were respectively 0.94, 0.50. The surface reaction of the etched Mo thin films was investigated with X - ray photoelectron spectroscopy (XPS).PS). -
Displacement current was generated in the pressure stimulus and light stimulus. Solution of azobenzene molecules (8A5H) have to character trans-to-cis. Pressure stimulus generate in the pressure and current. light stimulus generate in the displasement current. The Maxwell displacement current measuring technique has been applied for the investigation of azobenzene organic thin films under alternating photoirradiation with ultraviolet(360nm) and visible (450nm) light. The displacement current was generated due to the trans-to-cis photoisomerization by irradiation with ultraviolet light(λ
$_1$ =360 nm) Whereas the displacement current was generated in the opposite direction due to the cis-to-trans photoisomerization by irradiation with visible light(λ$_2$ =450nm). As result, To show twice reaction certainly phase transition in pressure. A first range generated from 24$\AA$ $^2$ to 29$\AA$ $^2$ and second range generated from 20$\AA$ $^2$ to 24$\AA$ $^2$ . Also, cetainfy stimulus apper low pressure and high pressure in photoirradiation. To see different every moment phase transition. -
Monolayers of lipids on a water surface have attracted much interest as models of biological membranes, but also as precursors of multilayer systems promising many technical applications. Until now, many methodologies have been developed in order to gain a better underst. DMPC molecules have one phosphatidylcholine head group and two long alkyl groups with carbonyl group. Displacement currents generated during the compression of monolayers of DMPC on the surface of water were investigated. As results, the displacement pick was generated when the area per molecule was about 190
$\AA$ $^2$ in low pressure, and it was generated when the area per molecule about 190$\AA$ $^2$ in for pressure, and it was generated when the area per molecule about 150$\AA$ $^2$ in high pressure. Also. for the study of photo device measured the absorption rate. the maxim value shown was 2800-2900nm. -
We studied on the ultra thin DMPC by Langmuir-Blodgett(LB) method. The
$\pi$ -A isotherm of the DMPC was measured at the air-water interface varying with the compressing speed and amounts of solutions for spreading. DMPC molecules have one phosphatidylcholine head group and two long alky groups with carbonyl group. Displacement currents generated during the compression of monolayers of DMPC on the surface of water were investigated. The molecular arrangement of deposited films were evaluated by measuring the absorption with the UVspectrometer. And we made structures of metal(Au)/DMPC/Metal(Au) and examined electron through DMPC LB films by means of current-voltage(I-V) measurement . -
The weight decreases of the thermal deteriorated IV were rapidly increased at 80
$0^{\circ}C$ and over. At the results of the analysis of the metallurgical microscope photographs. the surface of the thermal deteriorated IV at 30$0^{\circ}C$ was mixed with the elongated and original structures of Cu. But the elongated structures could not detected at 90$0^{\circ}C$ and over. The surface structures of SEM were detected a lot of small rounded particles between crystallizations. The EDX spectra of the thermal deteriorated IV at 3$0^{\circ}C$ were uniformly detected CuL, CuK, OK, and CIK, regardless of the scanning length, but the spectra of CIK could not found at 90$0^{\circ}C$ . At the DTA curves, the endothermic reactions were occurred at about 25$0^{\circ}C$ to 30$0^{\circ}C$ and 43$0^{\circ}C$ , and the exothermic reactions were occurred at about 48$0^{\circ}C$ respectively. -
Electrical stress makes insulating materials aged finally resulting in the dielectric failure. It becomes more and more important to recognize the degree of aging and the life time of the insulating materials since it is directly concerned with the reliability of the insulation system. In this paper, the life time of the Cross-linked Polyethylene(XLPE), the insulation layer in the 154kV-grade power cable, is expected and calculated using statistical and mathematical methods. The simulated results are compared with experimental ones and the life exponent of the material is obtained.
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In this thesis, we measured the Barkhausen effect of CoFeSiB amorphous ribbon and then investigated its possibility to be used as a sensor material. We used a sample of composition
$( $Fe_{0.06}$ $Co_{0.94}$ )_${0.79}$$Si_{2.1}$ $B_{18.9}$ with a thickness 12[pm1, width 2.5[rnml and length 5[cm], which was fabricated by a single roll method. In order to improve magnetic characteristics of the sample, we had carried on annealing in the magnetic field and in none magnetic field. And, experimented results to the magnetic characteristics show that the ribbon has large Barkhausen jump even in weak magnetic field below 0.5[0el. From the results, we confirmed that the sample can be used as an magnetic sensor material. -
The Effect of the precursor powder composition for Bi-system superconducting thick films on Cu tapesA well oriented Bi2212 superconductor thick films were fabricated by screen printing with a Cu-free Bi-Sr-Ca-O mixture powder on a copper plate and heat-treating at 820-88
$0^{\circ}C$ for several minute in air. During the heat-treatment, the printing layer partially melted by reaction between the Cu-free precursor and CuO of the oxidizing copper plate. In the partial melting state, it is believed that the solid phase is Bi-free phase and Cu-rich phase and the composition of the liquid is around Bi : Sr : Ca : Cu = 2 : 2 : 0 : 1. Following the partial melting, the Bi2212 superconducting phase is formed at Bi-free phase/liquid interface by nucleation and grows. With decreasing the Bi composition in the precursor powder, the critical temperature(T$_{c}$ ) of the fabricated Bi2212 thick film increased to about 79 K.K. -
We have fabricated and tested a Bi-based high temperature superconducting current lead system. Ag sheathed Bi-2223 mono-filament tapes of
$I_c=8.4$ A at 77 K under self-field condition were fabricated using powder-in-tube(P1T) method. Multi-layer current leads can be made by stacking of Ag sheathed Bi-2223 mono-filament wires. The critical current of this 10-layer current lead is about 68 A. The contact resistance across the copper-current lead interface has been studied using current-voltage characteristics. At temperature below critical temperature the resistive contribution of the interface to the total contact resistance dominates. We have measured AC transport losses in a current lead at 77 K, 60 Hz by a transport method. -
Bi
$_2$ Sr$_2$ CaCu$_2$ O(Bi-2212) thick films were fabricated on Y211 substrate by screen printing method. The aim of the study was to fabricate superconducting thick films on Y211 substrate by MPMG process. For this study, patterned samples by screen printing method were heated with MPMG process. The thickness of Bi2212 on substrate was about 20${\mu}{\textrm}{m}$ and these samples showed many Bi- 2212 phases. -
We have studied properties(crystal structure, density, absorption, contraction, initial permeability, and permeability) of Ni
$_{0.175-x}$ Cu$_{x}$ Zn$_{0.33}$ Fe$_{0.495}$ (x=0~0.175) ferrites with various NiO and CuO, because of development of materials for high frequency inductor. The XRD peaks of all of samples were observed only spine이 phase. As a results of the density, absorption rate, and shrinkage rate, the grain growth progressed rapidly in x=0.1 at 95$0^{\circ}C$ , x=0.075 at 105$0^{\circ}C$ , and x=0.025 at 115$0^{\circ}C$ for 3 hours. Initial permeability increased with increasing CuO concentration until x=0.1, and then decreased. The complex permeability as a function frequency were high values at sintered 105$0^{\circ}C$ fotr3 hours in x=0.075, 0.1., 0.1.1. -
The dependence of diffraction efficiency as a funct~on of film thickness and incident angle has been investigated in amorphous chalcogenide thin films, which act as a polarization holographic materials. Especially a-(Se, S) based films exhibit a number of photoinduced phenomena not observed in other types of amorphous thin films. Holographic gratings in amorphous As-Ge-Se-S thin films have been formed using the mutual perpendicular polarized(linearly) He-Ne laser light. We could obtain the optimum condition to get high diffraction efficiency.
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PED용 형광체로 사용되는 ZnCa
$_2$ O$_4$ 를 Clycine Nitrate Process로 합성하여 고상 반응법으로 합성한 ZnCa$_2$ O$_4$ 분말과 비교 분석하였다. 또한 Glycine Nitrate Process로 제조시 Mn의 doping 농도를 변화시키면서 각각의 조성비에 따른 발광특성을 알아보았다. TGA 측정 결과 GNP법으로 합성된 ZnCa$_2$ O$_4$ 의 경우 약 40$0^{\circ}C$ 이상에서 무게감량의 변화가 없었으며, XRD 상분석 결과 연소반응 후 이미 상형성이 이루어짐을 알 수 있었다. PL측정을 결과 GNP(GIycine Nitrate Process)로 제조된 ZnCa$_2$ O$_4$ 분말의 발광효율이 고상 반응법으로 제조된 분말보다 우수하였으며, 균일하고 비표면적이 큰 단일상임이 관찰되었고, 더 작은 에너지와 시간으로 제조할 수 있는 장점이 있었다 -
유기전계발광소자(OELD)의 성능 향상을 위한 많은 연구가 진행되고 있지만 아직까지 금속전극과 유기발 광층 사이의 접촉저항(Contact Resistance)에 관한 연구는 거의 보고되지 않고 있다. Ohmic 접합에서 접촉 저항은 효율적이고 신뢰성 있는 소자제작에 있어서 간과되어서는 안될 매우 중요한 부분이다. 본 연구에서는 금속전극과 유기발광충 사이의 접촉저항에 관해서 논의하고자 한다. 본 연구에서 제작된 샘플은 금속전극으로 Ag, 유기발광재료로서 Alq
$_3$ 를 사용하였으며, Alq3의 두께를 100$\AA$ 에서 500$\AA$ 까지 각각 다르게 하여 서로 다른 두께의 유기발광층을 가지는 샘플을 제작하였다. 금속전극의 매트릭스 구조에 의해 형성된 적선의 크기는 3 mm x 2 mm이며, 제작된 샘플의 접촉비저항은 TLM(Transmission Line Measurement) 방법을 이용하여 구하였다. Planar한 TLM model로부터 새로운 vertical model을 유추하였으며, 이를 근거로 접촉저항 및 transfer length 등을 계산하였다. 상온에서 측정된 전체 저항값은 유기발광층의 두께가 증가함 에 따라 증가하는 경향을 나타냈으며, 이 때 계산된 접촉비저항은 1.49$\times$ $10^1$ $\Omega$ -$\textrm{cm}^2$ 이다. 접촉저항은 전극 사이의 거리의 증가에 따라 증가하지만, 측정시간의 thermal budget의 영향으로 상대적으로 전체저항이 감 소하였으나, 저항감소분의 포화에 따라서, 거리에 비례하여 다시 저항이 증가하였다. -
A mixture which was made from organic gel, glass powder and ceramic powder was masklessly etched for fabrication of barrier rib of PDP(Plasma Display Panel) by focused Ar
$^{+}$ laser( λ =514 nm) and Nd:YAG(λ =532, 266 nm) laser irradiation at the atmosphere. The depth of the etched grooves increases with increasing a laser fluence and decreasing a scan speed. Using second harmonic of Nd:YAG laser, the threshold laser fluence was 6.5 mJ/$\textrm{cm}^2$ for the sample of PDP barrier rib softened at 12$0^{\circ}C$ . The thickness of 130${\mu}{\textrm}{m}$ of the sample on the glass was clearly removed without any damage on the glass substrate by fluence of 19.5 J/$\textrm{cm}^2$ .... -
In this paper, we suggest the FED packaging technology that have 4mm thickness, using sodalime glass-to-sodalime glass electrostatic bonding. It based on conventional silicon-glass bonding. The silicon film was deposited an around the exhausting hole on FED backside panel. And then, the silicon film of panel was successfully bonded with capping(bare) glass in vacuum environment and the FED panel was vacuum-sealed. In this method, we could achieve more 153 times increased conductance and 200 times increased vacuum efficiency than conventional tube packaging method. The vacuum level in panel, by SRG test, was maintained about low 10
$_{-4}$ Torr during above two months And, the light emission was observed to 0.7-inch tubeless packaged FED. Then anode current was 34$\mu$ A. Emission stability was constantly measured for 10 days. -
The PZT(10/90)/(90/17) heterolayered thin films were fabricated by the spin-coaling on the Pt/Ti/SiO
$_2$ /Si substrate using the PZT(10/90) and PZT(70/10) metal alkoxide solutions. The effect of heterolayered thin films on the ferroelectrics and electrical properties have been investigated. The lower PZT layers provided the nucleation site for the formation of a perovskite phase of the upper PZT films. Dielectric constant increased with increasing the number of coatings, and it was about 569.9 at PZT-6 heterolayered films. -
SrBi
$_2$ Ta$_2$ $O_{9}$ (SBT) thin films were fabricatcd with different Sr/Bi ratios by MOD. SBT thin films of thickness 2500$\AA$ deposited on Pt/Ti/SiO$_2$ /Si were crystallized at$700^{\circ}C$ ~85$0^{\circ}C$ using RTA method. As the Sr/Bi ratio was decreased, dielectric constant and remanent polarization were increased. SrBi$_2$ Ta$_2$ $O_{9}$ showed a maximum dielectric constant value of$\varepsilon$ $_{r}$ = 268, and maximum remanent polarization (2Pr) of ~9.86$\mu$ C/$\textrm{cm}^2$ when annealed at 8$0^{\circ}C$ for 8 min.min.n. -
PLZT thin films were fabricated with different energy density by pulsed laser deposition. PLZT films deposited on Pt/Ti/SiO
$_2$ /Sr substrate. This PLZT thin films of 5000$\AA$ thickness were crystallized at$600^{\circ}C$ , 200mTorr$O_2$ pressure for 2 J/$\textrm{cm}^2$ laser energy density. 14/50/50 PLZT thin film showed a maximum dielectric constant value of$\varepsilon$ $_{r}$ =1289.9 P-E hysteresis loop of 14/ 50/50 PLZT thin film was slim ferroelectric. Leakage current density of 14/50/50 PLZT thin film was 10/ sup -7/=A/$\textrm{cm}^2$ .>. -
(Ba
$_{0.6}$ Sr$_{0.4}$ )TiO$_3$ (BST) thin films were fabricated with different deposition temperature and oxygen pressure by Pulsed Laser Deposition(PLD). Energy Dispersive Spectroscopy(EDS) proved that BST thin films prepared by PLD have almost the same stoichiometric composition as the BST target materials. This BST thin films were fully crystallized at$650^{\circ}C$ , 300mTorr oxygen pressure and showed a maximum dielectric constant value of$\varepsilon$ $_{t}$ =684 and dielectric loss was 0.01 at 75$0^{\circ}C$ , 300mTorr oxygen pressure.ssure. -
Dielectric and piezoelectric properties of perovskite materials such as La modified
$Pb(Zr,Ti)O_3$ ceramics and$Pb(Zn_{1/3}Nb_{2/3})O_3-PbTiO_3$ single crystals were investigated for cryogenic capacitor and actuator applications. Enhanced extrinsic contributions resulted in piezoelectric coefficient (d33) as high as 250 pC/N at 30 K, superior to that of PZT ($d_{33}$ ~ 100 pC/N). This cryogenic property enhancement was associated with retuning the MPB (or cryogenic temperatures. PZN-PT single crystals exhibited dramatic property improvements such as$d_{33}$ > 500 pC/N at 30 K as a result of an engineered domain state. -
We report on the electrochemical properly of LiZ
$n_{x}$ Mn$_{2-x}$ $O_4$ for different degrees of Zn substitution(x) Though all cathode material showed spinel phase based on cubic phase in X-ray diffraction, other peaks(M$n_2$ $O_3$ or M$n_3$ $O_4$ ) gradually exhibited and became intense with the increase of x vague in LiZ$n_{x}$ Mn$_{2-x}$ $O_4$ . In addtion, TG-DTA analysis exhibited that both LiM$n_2$ $O_4$ and LiZ$n_{0.1}$ M$n_{1.9}$ $O_4$ occurred the weight loss(TG) and the endothermic and exothermic reaction(DTA) until 80$0^{\circ}C$ When x=0.1 in LiZ$n_{x}$ Mn$_{2-x}$ $O_4$ cathode materials showed the charge and discharge capacity of about 100mAh/g at first cycle and about 70mAh/g after tooth cycle.cle.e.cle.e.e.e. -
금속 다층박막과 미세입상 합금박막에서 발견된 Giant Magnetoresistance(GMR) 현상에 고무되어 최근에는 50년대에 밝혀졌던 산화물 자기저항 재료에 관하여 새롭게 연구하고 있으며 perovskite 구조를 가지는 La
$_{1-x}$ Ca/xub x/MnO$_{3}$ 박막에서 큰 자기저항을 얻었으며 이를 Colossal Magentoresistance (CMR) 이라 부른다. 본 연구에서는 La$_{1-x}$ Ca/xub x/MnO$_{3}$ 분말을 하소온도를 700-90$0^{\circ}C$ 로 변화시킨 고상반응법과 자발착화연소합성법(Glycine-Nitrate Process) 으로 각각 제조하였으며 비교 분석하였다. TG-DTA을 이용하여 불순물과 미반응 물질을 확인하여 적당한 하소 온도를 결정하였고 XRD를 이용하여 결정상을 분석하였다. 주사전자현미경(SEM)으로 각각 제조된 분말의 하소후 입자의 크기를 비교하였다. GNP법으로 합성한 경우가 고상반응법을 이용한 경우보다 입자의 크기가 submicron 단위로 미세하고 균질하며 고순도의 perovskite 구조를 갖는 La$_{1-x}$ Ca/xub x/MnO$_{3}$ 분말을 얻을 수 있었다.었다. -
We confirm that when A-type zeolite supporting silver lone is placed in ion-exchanged distilled water, silver ions is eluted and eluted silver ions generates hydroxyl-radical (.OH) and hydro-radical (.H) continuously, the amount of those is proportion to the silver-ion concentration. Hydroxyl-radical is not generated by super-oxide anion-radical (.O2) but by directly dissolved water. To know such a above discussed mechanism, we prepare A-type zeolite supporting silver ions, and measure the amount of the eluted silver tons by atomic absorption spectroscopy and the generated radical by ESR The radical generated by A-type zeolite supporting silver ions is discussed in the application of elecrical and electronic materials.
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Langmur-Blodgett (LB) method has a unique characteristic of making molecularly mutilayered aggregation structures. LB method makes the thickness of organic insulation layer controllable at molecular scale in various electronic devices. In this study, the organic materials applicable to crosslinked LB insulation layers of electronic devices have developed and the electrical properties of their LB films have examined such as Brewster angle microscopy(BAM), Scanning Maxwell-stress microscopy(SMM), and Current-voltage(1-V) properties.
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The electrical and physical characteristics of MgO and Pt thin-films on Si wafers deposited by r.f magnetron sputtering, were analyzed with annealing condition(100
$0^{\circ}C$ , 120 min) by four point probe, SEM and XRD. Until annealing temperature of 100$0^{\circ}C$ , MgO had the properties of improving Pt adhesion to SiO$_2$ and insulation without chemical reaction to Pt thin-films and the resistivity of Pt thin-films was improved. The thermal characteristics of Pt micro-heater were analyed with Pt-RTD integrated on the same substrate, In the analysis of properties of Pt-RTD, TCR value had 3927 ppm/$^{\circ}C$ and liner in the temperature range of 25~40$0^{\circ}C$ temperature of Pt micro-heater had up to 40$0^{\circ}C$ with 1.5 watts of the heating power. -
The paper provides the results of failure analysis for the porcelain suspension insulators. The comparisons of characteristics were made as a function of failed and unfailed isulators which had been used in real distribution line. This paper also described the failure modes which could be occurred in the fields. The cracks inside cap were detected though measuring the resistance or the leakage current. The ratio of open porosity was calculated from the Archimedes Method. The failure analyses of porcelain suspension insulators were conducted from the various analysis method.
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Estimation system of aging diagnosis using partial discharge(PD) is being highlighted as a research area for the residual lifetime pridiction of industrial equipment. But the application of PD requires complicated analysis method as expert system because the PD has complex progressing forms according to external stress. In this paper, it has been investigated the statistical distribution to express the 2D PD patterns of the diagnosis system using neural network(NN).
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The chaotic characteristics of partial discharge(PD), may seems to be stochastic and merely random, were investigated using the method to discern between chaos and random signal, e.g. correlation integral, Lyapunov characteristic exponents and etc. For the purpose of obtaining experimental data, computer aided partial discharge detecting system was used. While this method is very different from typical statistical analysis from the point of view of a nonlinear analysis, it can provide better interpretable criterion according to the time evolution with a degradation process in the same type insulating system.
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Recently, the wavelet transform has been a new and powerful tool for signal processing. It is more suitable specially for the feature extraction and detection of non-stationary signals than traditional methods such as, the Fourier Transform(FT), the Fast Fourier Transform(FFT) and the Least Square Method etc. because of the characteristic of the multi-scale analysis and time-frequency domain localization. The wavelet transform has been developed for the analysis of PD pulse signal to raise in the progress of insulation degradation. In this paper, the wavelet transform was applied to one foundational method for feature extraction. For the obtain experimental data, a computer-aided partial discharge measurement system with a single acoustic sensor was used. If we are applying to the neural network method the accumulated data through the extracted feature, it is expected that we can detect the PD pulse signal in the insulation materials on the on-line.
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Crosslinked Decree is an important 7actor to determine dielectric property of crosslinked polyethylene(XLPE) used for the insulation material in Power cables. Recently, though it is necessary to investigate electrical properties according to crosslinked degree as a Part of the whose characterization of cable. it is not examined closely. In this study. crosslinked degree of samples were measured according to temperature and holding time of crosslinking. electrical tree characteristics of these characteristics of these samples were analyzed by crosslinked degree and applied temperature that was chanced from normal temperature to operating temperature of power cables. As a result. when the crosslinked degree was low, dielectric properties were decreased and influence of temperature was increased. but the crosslinked degrees were high, initiation voltages of treeing were increased and dielectric properties were improved. It is proved that the optimum crosslinked degree was one of most important factor for aging time and residual lifetime of Power cable.
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A new band pass filter (BPF) prepared by dielectric monoblock and its design techniques are presented. The modeling of the three-pole dielectric monoblock BPF has been carried out by CAD. The equivalent circuit of the BPF was established by transmission lines and lumped capacitors. The transmission line characteristic impendances were computed using 2-D FEM. The BPF for PCS has been designed to have a 60 MHz pass-bandwidth with center frequency of 1960 MHz and an attenuation pole at below the passband using a commercial 3-D structure simulator.
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The derivative equation measured of a MV=Kp8{(EVn-EVn-1)+Ki/S/1* EVn+(Kd/s)*(2PVn-1-{PVn-PVn-1)}(원문이미지참조) is used on the machine apparatus of industrial field, but this par doesn\`t able to educate now, because we didn\`t have the implementation device of PID module, so the principle implementation system of the PID Module is manufactured and developed. Through this system, the implementation system of PID Module is practiced with that the SV and the set of P, I, D is set on the derivative equation measured of PID. A things to be known of this experiment result is flow. 1)PID module is known that had to be used with the module of A/D and D/A. 2) In process of PV is approached to the SV to follow Kp, Ti and Td to cause a constant of set value on the MVp=Kp*EV, Mv=Ki/1 EVdt, MVd+tDBT/D EV(원문이미지참조) the variable rate of E and Kp, Td, Ti in that table 1 is analysed, is same as flow. ①If Kp is high, PV is near fast to the SV, but Kp is small, PV is near slowly to the SV. ②If Ki is shot, PV is close fast to the SV, but Ti is high, PV is close slowly to the SV ③If Td is high, the variable rate of E press hardly when because it doesn\`t increase, but Td is small, the variable rate of E press not hardly, upper with 1),2), PID module is supposed that be able to do the A/S and an implementation of that apparatus, and getting a success of aim that an engineer want, on control of temperature, tension, velocity, amount of flow, power of wind end so on, to get the principle of automatic implementation in industrial field with cooperation of A/D and D/A module.
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Organic electroluminescent devices have attracted a great deal of attention due to thier potential application to full-color flat-panel displays. The 8-hydroxyquinollne Zinc(Znq
$_2$ ) were synthesized successfully from zinc chloride(ZnCl$_2$ ) and zinc acetate(Zn(C$_2$ H$_3$ O$_3$ )$_2$ ) as green omitting material. A double-layer ELD consist of an emitting layer of B-hydroxyquinoline Zinc(Znq$_2$ ) and a hole-transport layer of tai-phenylene diamine(TPD) derivatives sandwiched between an Aluminium(Al) and Indium-Tin-Oxide(ITO) electrodes omitted green light resulting from Znq$_2$ . The electroluminescent devices (ELD) exhibited a maximum luminance of 1000cd/$\textrm{cm}^2$ at a driving voltage of 8V and a driving current density of 0.4mA/$\textrm{cm}^2$ . -
The polyacene materials prepared from phenol resine at relatively low temperature(550~75
$0^{\circ}C$ ) show a highly Li-doped state up to$C_2$ Li state without liberation of Li cluster. We prepared each polyacenic materials various temperature and investigated electrochemical property. We tried to change the mole ratio of [H]/[C] that was 0.24~0.4 range and finally found that the further discussion of improvements of battery materials. The X-ray structural analyses have shown that this material is essentiallly amorphous with loose structure in molecular size order. This structure ensures that the PAS battery has both reliability on repetitive doping-undoping processes and higher energy density than other batteries. The PAS electrode has been confirmed to show good stability and reversibility. -
Polarization mode dispersion (PMD) restrict the bend-width of single mode optical filer, and it is important parameter in the optical fiber having long-length. Although fiber has perfect circular symmetry, fiber bending, twisting and laws governing manufacture cause additional Polarization mode dispersion. The effect of polarization mode dispersion in general single mode fiber of long length is discussed in this paper. Measurement of PMD with random mode coupling were conducted in two kind of fibers using different laws governing manufacture and interferometric method.
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The objective of this study Is to deposited the preparation of SrTiO
$_3$ 3 dielectric thin films on Ag/barrier-mater/Si(N-type 100) bottom electrode using a conventional rf-magnetron sputtering technique with a ceramic target under various conditions. It is demonstrated that the leakage current of films are strongly dependent on the atmosphere during deposition and the substrate temperature. The resistivity properties of films deposited on silicon substrates were very high resistivity. Capacitance of the films properties were the highest value(1000pF) and dependent on substrate temperature. -
In this paper, we documented the controlling oxide removal amount on the pattern wafer using removal rate and removal thickness of blanket wafer. There was the strong correlation relationship for both(correlation factor:0.7109). So, we could confirm the repeatability as applying for STI CMP process from the obtained linear formular. As the result of repeatability test, the difference of calculated polishing time and actual polishing time was 3.48 seconds based on total 50 lots. If this time is converted into the thickness, it is from 104
$\AA$ to 167$\AA$ . It is possible to be ignored because it is under the process margin. -
Polymeric composite insulators have been in use for outdoor insulation. However, our knowledge about their long-term performance in a outdoor environment is still very limited. Especially, these insulator are subjected to the environmental stress such as ultraviolet radiation. Hence, in this paper. the influence of UV radiation on the aging of the shed materials was evaluated. For the aging evaluation, these insulators studied by experiment methods such as contact angle measurement. oxidation induced time. SEM/EDX, FTRI-ATR, tracking test for the different insulator samples. With the increased UV exposure time, samples are shown to exhibit degradation comparable to those of new ones
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Many researchers make efforts to develope an effective material with anti-tracking property. Specially, the porcelain type insulator is required exchanging to polymer insulator according to the environmental consideration. In this paper, we have developed the estimation system using the translated IEC-60587 test for the application of actual insulator. Those approach has been very successful applied to the various practical insulator.
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Degradation diagnosis of XLPE insulated URD cables was accomplished through out new method. which was to be analyzed non-electrical experiments and synthesized by degradation points. To supplement this method, it was also carried out using several electrical analyses. Breakdown voltages were measured and breakdown lifetimes were Predicted appling for Weibull distribution function. As a result, breakdown lifetime in failure cables was shorted up to 1/3 times than that in general cables. It was very available to estimate cable degradation using above method, but it needs further study on XLPE insulated URD cables in order to improve reliability.
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Epoxy compound has been used as insulation material in electrical equipment for a long time because of its excellent electrical, mechanical and chemical properties. Nowdays, becoming higher voltage system, the properties of interface between epoxy and metal insert become more important. The breakdown voltage of epoxy compound for electric material is variable according to the surface roughness of metal insert. Generally, with metal insert sanding, the adhesion strength is enhanced and the breakdown strength is reduced. But in this study, we knew that the adhesion strength became enhanced but the breakdown strength didn\`t reduced with metal insert sanding. So in this study sanding. So in this study, we suggest the optimum interface condition by adjusting the surface roughness.
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Because Insulation material is play an important part for normal work of electricity equipment, the study is advanced, but as the voltage of electricity system is raising, we required that new lnsulation material. They have excellent specific against high stress, namely the study of insulation increase and prevention diagnosis of insulation degradation of Epoxy or XLPE and so on. In this thesis. I utilize image processing technique for effective inspection of insulation material degradation.
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The correlation between shape of electrical trees and partial discharge(PD) pulses in low density polyethylene(LDPE) were discussed. We observed growth feature of electrical tree by using optical microscope. On the basis of experimental results of measurements of trees occurring in the needle-plane arrangement with needle shape void and without needle shape void , statistical quantities are derived, which are relevant to PD pulse amplitude and phase. The PD quantities detected by partial discharge detector. we were analyzed q-n distribution pattern and
$\psi$ -q-n distribution pattern. In this experiment, electrical trees in the needle-plane arrangement with needle shape void propagated branch type tree and in the needle-plane arrangement without needle shape void propagated bush type tree -
In this study, we evaluates the dependence of thickness and temperature in the breakdown strength of MDPE and effect of semiconductor. As the result, breakdown strength trend to decrease according to the increase of thickness and temperature but there is no dependence of temperature in the 70
${\mu}{\textrm}{m}$ MDPE film. We obtained the result that the breakdown strength was a little lower in the structure of Semil/MDPE than Semi/MDPE/Semi, but breakdown strength of MDPE was greater both of all. Therefore we are investigating the effect of semiconductor in the breakdown strength. -
The displacement current measuring system used for detecting the dynamic behavior of monolayers at the air-water interface is described. It basically consists of a film balance, a pair of electrodes connected to each other through a sensitive ammeter. Here, one electrode is suspended in air and the other electrode is the water, With Maxwll-displacement-current-measuring method, the phase transitions of Poly(λ-benzyl- L-glutamate)(PBLG) on a water surface were detected, Displacement currents generated during the compression of monolayers of PBLG on the surface of water were investigated. As results, the displacement pick was generated when the area per molecule was about 15
$\AA$ $^{2}$ in low pressure, and tit was generarted when the area per molecule about 27$\AA$ $^{2}$ in high pressure. -
In this study, three kinds of Mn-Zn ferrite/Ni-Zn ferrite/
$Ni_2Y$ ferroxplana prepared by the coprecipitation method was compounded with silicon rubber, and thereafter made ring-type specimens with various compositional ratio. The material constant of ferrite/rubber composite absorbers was obtaibed by the 2-port method. The material constants of the ferrite/rubber composite absorber with various compositional ratio of three kinds of ferrite were used to design the matching frequency and thickness with the impedance matching map. We were able to predict the matching condition from the design method. -
A new multi-seeding process for the growth of YBa
$_2$ Cu$_3$ Oxx single crystals was developed. This process introduces an additional heating step to peritectic temperature and a subsequent slow cooling step to the growth temperature following the point when the crystals contacted. The crystal growth was resumed thereafter. The results obtained with this new process were compared with those of the conventional growth process, in which materials were only kept at the growth temperature. It was observed that the liquid phase between crystals were almost completely eliminated, but that Y2ll grains were grown during this new process. There was no significant improvement in trapped magnetic field over the conventional process, which is believed to be due to the cracks generated during the oxygen heat treatment or to the growth of YBa$_2$ Cu$_3$ Ox grains. -
We investigated the current limiting characteristics of resistive and inductive SFCLs with 100
$\Omega$ of quench impedance for a single line-to-ground fault. which accounts for about 70% of the total power line faults, in the 154 kV transmission system. The fault simulation at the phase angles 0$^{\circ}$ , 45$^{\circ}$ , and 90$^{\circ}$ showed that the resistive SFCL limited the fault current less than 15 kA without any DC component after one half cycle from the instant of the fault. On the other hand, the inductive SFCL suppressed the current below 12 KA, but with 3 kA of DC component which decreased to zero in 5 cycles. We concluded that the inductive SFCL had higher performance in current limiting but the resistive SFCL was better from the view point of DC components. -
In this study, we investigated magnetic Properties of N
$i_{0.2-x}$ C$u_{x}$ Z$n_{0.305}$ F$e_{0.495}$ (x=0 ~0.2) ferrites. As the increased, the density and shrinkage increased until 5.3g/㎤, 20% respects, but the absorption decreased rate until 0.01%. As a results of the density, absorption rate, and shrinkage rate, the grain growth progressed rapidly in x=0.125 at 105$0^{\circ}C$ , x=0.075 at 115$0^{\circ}C$ , and x=0.025 at 115$0^{\circ}C$ for 3hours. As the CuO concentration increased, initial permeability increased at sintered 105$0^{\circ}C$ and 115$0^{\circ}C$ for 3 hours, but decreased at 125$0^{\circ}C$ for 3 hoers. The complex permeability as a function of frequency were high values at sintered 105$0^{\circ}C$ for 3 hours in x=0.005, 0.075.5.5.5. -
Electrolunlinescent devices based on conjugated polymer emitting materials have been much attracted possible applications for multicolor flat panel display, since the conjugated polymers have a small band gap emitting obtained at a low driving voltage. In this paper, we fabricated the single layer EL device using poly(3-hexylthiophene) as emitting material Electroluminescence(EL) and I-V-L characteristics of indium-tin-oxide[ITO]P3HT/AI device with a various thickness were investigated. It was demonstrate that the I-V characteristics depend, not the voltage but the electric- field strength, The current is dependent on the electric filed and not on the applied voltage, indicating that the carriers are injected by a tunneling process. In the device, the barrier to hole injection is only 0.5eV and the barrier to electron injection is 1.5eV.
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We measured the dielectr~c constant of undoped GaN thin films grown on (0001) sapphire substrates In 0.8 - 4.5 eV energy (276 - 1550 nm wavelength) range by spectroscopic ellipsometry. For more accurate data analysis we also performed X-ray diffraction, photolurninescence and Rutherford backscattering spectroscopy on samples. Data were analyzed with a four-phase model. The dielectric constant of GaN thin films was obtained not only in the transparent region but also around the absorption edge. Absorption edge energy,
$3.3992{\pm}0.002$ eV was determined from the obtained dielectric function. -
In this paper, we studied the matrix type Powder AC Electroluminescence using ZnS:Cu,Cl Phosphor. Previously, Powder AC EL was used in Backlighting of LCD. Rescently, organic Thin Film EL was rapidly developed because of high Luminescence and low applied voltage. But Powder AC EL has Superior features that include sheet like flexibility thickness, low weight, self-emission, a wide viewing angle and a fast response time. We tried to change of phosphor thickness and binder mixture rate in order to obtain the good condition of powder AC EL and we obtained the very low breakdown voltage that was just 15V. Till now, we measured the current-voltage(V-I), luminance-voltage(V-L), Luminance-current (L-I), color coordinate (CIE), and phosphor Intensity of variable thickness. In experiment result, the devices has the luminance of 840 cd/
$m^2$ and improved color coordinate, x=0.1557, y=0.2145, using a 10kHz drive frequency. -
A application possibility of photoresist flexible film for optical waveguide is proposed and described. The optical waveguide dimensions that is consists of Mach-zehnder interferometric and single channel waveguide based on the single-mode conditions in LiNbO
$_3$ device was utilized and fabricated by wet etching technique. This Polymer material for core layer is SU-8/5O(Microchem.) and its refractive index from prism couping method was measured about 1.59 thickness about 10${\mu}{\textrm}{m}$ at wavelength 0.6328${\mu}{\textrm}{m}$ . From the results, this work can show the possibility of fabricating a flexible optical waveguide in the field of integrated optics. -
We designed and fabricated a travelingwave CPW(coplanar waveguide) electrode for LiNbO
$_3$ optical modulator. To Investigate the variation of microwave refractive index of these electrodes, we prepared the CPW electrode samples as a function of electrode thickness and measured the TDR and S-parameter. From this results, we could know the electrode conditions of index matching to 2.20 for 1150 nm optical wave index for applying LiNbO$_3$ optical modulator. Also we discussed the some properties of CPW electrode for applying LiNbO$_3$ optical modulator. -
Fabrication and pakaging method for low delve voltage and 10Gbps Ti diffused waveguide LiNbO
$_3$ optical intensity modulator are described. Optical waveguides were prepared by conventionaly electron-beam evaporation and Ti-indiffusion into Z-cut plate LiNbO$_3$ . Traveling-wave electrodes were used for obtaining the wideband frequency response and impedance matching. Microwave effective index and characteristic impedance measured by time domain reflectometry and compared with the calculated value by conformal mapping. The characteristics of 10Gbps modulator at the 1550nm wavelength are as follows : perfect modulation voltage Is about 5V, optical insertion loss Is about 5dB, 3-dB bandwidth is 10GHz, and characteristic impedance is about 50$\Omega$ . -
Electroluminescence is occurred when phosphor is located in electric field. In this paper, we made powder electroluminescent device (PELD) with structured ITO film/Phosphor/Insulator/Silver paste. The transparent electrode was ITO film and green(2704-01), orange(2702-02) and blue-green(2703-01) were used as phosphor. The insulator was BaTiO
$_3$ and$Y_2$ O$_3$ , back electrode was silver paste. To investigate electrical and optical properties of PELDs, EL spectrum, Brightness, Transferred charge density using Sawyer-Tower\`s circuit was measured. -
The effect of AI
$_2$ O$_3$ +Y$_2$ O$_3$ additives on fracture toughness of$\beta$ -SiC-ZrB$_2$ composites by hot-pressed sintering were Investigated. The$\beta$ -SiC-ZrB$_2$ ceramic composites were hot-presse sintered and annealed by adding 1, 2, 3wt% AI$_2$ O$_3$ +Y$_2$ O$_3$ (6:4wt%) powder as a liquid forming additives at 195$0^{\circ}C$ for 4h. In this microstructures, no reactions were observed between$\beta$ -SiC and ZrB$_2$ , and the relative density Is over 90.79% of the theoretical density and the porosity decreased with increasing AI$_2$ O$_3$ +Y$_2$ O$_3$ contents. Owing to crack deflection and crack bridging of fracture toughness mechanism, the fracture toughness showed the highest of 5.5328MPa . m$^{1}$ 2/ for composites added with 2wt% AI$_2$ O$_3$ +Y$_2$ O$_3$ additives at room temperature. But the standard deviation of fracture toughness of specimens decreased with increasing AI$_2$ O$_3$ +Y$_2$ O$_3$ contents and showed the highest of 0.8624 for composite tilth 1wt%, AI$_2$ O$_3$ +Y$_2$ O$_3$ additives. -
The (S
$r_{1-x}$ C$a_{x}$ )Ti$O_3$ (SCT) thin films are deposited on Pt-coated electrode(Pt/TiN/$SiO_2$ / Si) using RF sputtering method with substitutional contents of Ca. The maximum grain of thin films is obtained by substitution of Ca at 15[mol%]. The dielectric constant was increased with increasing the substitutional contents of Ca, while it was decreased if the substitutional contents of Ca exceeded over 15[mo1%]. The dielectric constant changes almost linearly in temperature ranges of -80~ +90[$^{\circ}C$ ]. The temperature properties of the dielectric loss have a stable value within 0.02 independent of the substitutional contents of Ca. All SCT thin films used in this study show the phenomena of dielectric relaxation with the increase of frequency, and the relaxation frequency is observed above 200(kHz).).. -
For the fast dry of the aqueous tape, the process which water was replaced by organic solvent was proposed. So-called, it was the solvent washing dry, Three organic solvents (methanol, ethanol, and acetone) were selected for the washing solvent. The weight loss of the washed tapes was measured to evaluate the dry rate of the tapes and dried tapes were examined the generation of the cracks with the variations of the organic solvent and the washing time. Methanol, ethanol, and acetone were all available organic solvents for this method. The tapes washed in methanol, ethanol, and acetone were dried rapidly for twenty minutes. After thirty minutes, the weight losses were not any more. The solvent of the lower surface tension can decreases the crack of dried tape. If solvent substitutes water completely, though it was fast dried, crack can be eliminated. The tape casting system was designed for the solvent washing dry and prepared. An homogeneous tape was established by continuous tape casting process.
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The Mg(
$_{1-x}$ )S$r_{x}$ Ti$O_3$ (x=0.1,0.2,0.3) ceramics were prepared by the conventional mixed oxide method. The structural properties were investigated with calcining temperature and composition ratio by XRD and DT-TGA. Increasing the calcining temperature from 80$0^{\circ}C$ to 100$0^{\circ}C$ , second phase was decreased and average particle size was increased. The SrTi$O_3$ ceramics of calcined at 100$0^{\circ}C$ had a structure of polycrystalline perovskite without the secondary phases. The average particle size of the$Mg_{0.9}$ S$r_{0.1}$ Ti$O_3$ ceramics calcined at 100$0^{\circ}C$ were 0.67${\mu}{\textrm}{m}$ ..>...... -
The varistor characteristics of
$ZnO-Pr_6O_11-CoO-Er_2O_3$ -based ceramics were investigated.$ZnO-Pr_6O_11-CoO-Er_2O_3$ -based ceramics were sintered at$1300^{\circ}C$ and$1350^{\circ}C$ in the addition range 0.0~2.0mol%$Er_2O_3$ , respectively.$ZnO-Pr_6O_11-CoO-Er_2O_3$ -based ceramics, which are added with 0.5mol%$Er_2O_3$ at$1300^{\circ}C$ and l.Omol%$Er_2O_3$ at$1350^{\circ}C$ sintering temperature, exhibited the bestexcellent varistor characteristics, namely, the nonlinear exponent was better 52.78 at$1300^{\circ}C$ thanat 13$1350^{\circ}C$ and the leakage current was better 6.57$\mu\textrm$ A at$1350^{\circ}C$ than at$1300^{\circ}C$ . Consequently, it is estimated that$ZnO-Pr_6O_11-CoO-Er_2O_3$ -based ceramics, which$Er_2O_3$ is added in the range 0.5~l.Omol% will begin to be used as a predominant basic composition of$PR_6O_11$ -based ZnO varistors. -
I-V characteristics of Praseodymium-based ZnO varistor doped with
$Nd_2O_3$ in the range 0.0-2.0mol% sintered at 130$0^{\circ}C$ and 135$0^{\circ}C$ were investigated. In the all sides, ZnO varistors sintered at$1300^{\circ}C$ exhibited much better varistor characteristics than that at 135$0^{\circ}C$ . All ZnO varistors doped with$Nd_2O_3$ sintered at$1300^{\circ}C$ exhibited good varistor characteristics but particularly ZnO varistor doped with l.Omol%$Nd_2O_3$ exhibited the best characteristics, which the nonlinear is 65.2 and the leakage current is 4.5pA. It is estimated that ZnO varistor doped with l.Omol%$Nd_2O_3$ will begin to be sufficiently used as basic composition to fabricate a good varistor. -
In this study, the piezoelectric ceramics PZT powder was synthesized by Wet-Dry combination method. And the flexible 1-3-0 type composites were fabricated with piezoceramic PZT and Eccogel polymer matrix embedded 3rd phase. Dielectric constant of 1-3-0 type composites was lower than that of single phase PZT ceramics. Thickness mode coupling factor k/sub t/ which was comparable with single phase PZT ceramics and mechanical quality factor Qm were about 0.65 and 6, respectively. These composites are considered as a good candidates for broad-band type transducer applications. The acoustic impedance of 1-3-0 type composites was lower than that of single phase PZT ceramics. Therefore, these composites would be better used for hydrophone applications.
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This paper was presented to BaTiO
$_3$ -SrTiO$_3$ (BST) ceramic capacitor in using high voltage. Structural and electrical properties of BST ceramic capacitor were researched in accordance with SrTiO$_3$ contents. As the result of investigation, the BST1 ceramic capacitor was showed to stable dielectric properties between 25 and 85[$^{\circ}C$ ]. According as frequency was increased, relative permittivity was decreased because inner spontaneous polarizations were decreased. As supplied voltage was increased, relative permittivity of specimen was varied in 3.04 ~3.98[%]. -
The physical and electrical properties of
$\textrm{Ba}_1$ $_{x}\textrm{Sr}_{x}$ ($\textrm{Mg_{1/3}Nb_{2/3}}$ )$\textrm{O}_3$ (x =0, 0.2, 0.4, 0.6, 0.8, 1.0) ceramics were investigated. The Bal$_{x}\textrm{Sr}_{x}$ ($\textrm{Mg_{1/3}Nb_{2/3}}$ )$\textrm{O}_3$ systems were shown that the hexagonally ordered superlattices were increased with increasing x values. The relative densities of all samples were over 97% theoretical densities. The dc resistivities of samples were$10^{13}$ -$10^{14}$ $\Omega\textrm{cm}$ at room temperature, these values were nearly constant at 130(x=0)-$230^{\circ}C$ (x=l). However, the resistivities of samples decreased rapidly above those temperature and their activation energies were from 1.0 to 1.52 eV. The relative dielectric constant was 33(BMN) and 30.6(SMN) respectively. And the highest value was shown at x=0.4 and the value was 34.3. The temperature coefficient of dielectric constant was -61 ppm/$^{\circ}C$ (BMN) and 79 ppm/$^{\circ}C$ (SMN) respectively. -
In this paper, BST((Bao.&o,dTi0:3) thin films were deposited by the rf magnetron sputtering method on Pt/
$SiO_2$ /Si substrate. Pt,$RuO_2$ , Ag, Cu films for the formation of top electrode were deposited on BST thm films. And then Top Electrodes/BST/Pt capacitors were annealed with rapid thermal annealing(RTA) at various temperature. We have investigated effect of post-annealing on the electrical properties such as dielectric constant and leakage current of the capacitors. It was found that electrical properties of the capacitors were greatly depended on the annealing temperatures as well as the materials of top electrodes. In BST thin films with Pt top electrode was annealed at$700^{\circ}C$ . the dielectric constant was measured to the value of 346 at l[kHzl and the leakage current was obtained to the value of$8.76\times10^8$ [A/$\textrm{cm}^2$ ] at the forward bias of 2[V]. -
The relationship between the DC degradation characteristics of the
$ZnO-Bi_2O_3$ varistor and post-annealing is investigated in this study.$ZnO-Bi_2O_3$ varistors containing$SiO_2$ range 0.3 mol% were fabricated by standard ceramic techniques. The post- annealing is performed at$550^{\circ}C$ for 0, 1.5 and 5h. A little phase transition is found according to the analysis of X-ray diffraction. DC degradation tests were conducted at$115\pm3^{\circ}C$ for periods up to 22h. Current-voltage analysis was used to determine nonlinear coefficients($\alpha$ ). Capacitance-voltage analysis enable the donor density($N_d$ ) and the barrier height($E_B$ ) to be determined. From above analysis, it is found that the past-annealing for 5h improved degradation characteristics in$ZnO-Bi_2O_3$ with Si additive. -
Since the first reports of CMR(colossal magnetoresistance) effects in some single crystal R-P Phase Ln
$_{1-x}$ Sr$_{2-x}$ Mn$_{2}$ O$_{7}$ 1996. many researches have been carried out to find optimum compositions and processing conditions in this system. In this study, layered perovskite R-P Phase Ln$_{1-x}$ Sr$_{2-x}$ Mn$_{2}$ O$_{7}$ (x=0.4, Ln=-La, Eu, Gd, Nd, Pr, Sm) phases were synthesized by solid state reaction and their structures were refined by Rietveld method. Electrical and magnetic properties were measured drown to 20K and compare with those of R-P Phase Ln$_{1-x}$ Sr$_{2-x}$ Mn$_{2}$ O$_{7}$ Phases.es.es.es.es.es. -
The effects of post annealing treatments of ferroelectrlclty in PZT(P
$b_{1.05}$ (Z$r_{0.52}$ ,$Ti_{0.48}$ )$O_3$ thin film deposited on Pt/$SiO_2$ /Si substrate by RF-Magnetron sputtering methode was Investigated. Analyses by RTA(Rapid Thermal Annealing) treatments reveled that the crystallization process strongly depend on the healing temperature. The Perovskite structure with strong PZT (101) plan was obtained by RTA treatments at 75$0^{\circ}C$ With increasing RTA temperature of PZI thin films, the coercive field and remanent Polarization decreased, while saturation polarization($P_{r}$ ) was decreased. P-E curves of Pt/PZT/Pt capacitor structures demonstrate typical hysteresiss loops. The measure values of$P_{r}$ ,.$E_{c}$ and dielectric constants by post annealed at 75$0^{\circ}C$ were 38$\mu$ C/$\textrm{cm}^2$ 35KV/cm and 974, respectively. Switching polarization versus fatigue characteristic showed 12% degradation up to 10$^{7}$ cycles.s.s.s.s.s.s. -
The monolayer behaviors at the air-water interface and the dielectric properties of MI-0 LB films for complex concentration were investigated by the surface pressure-area (
$\pi$ -A) isotherms and dielectric constant. The molecular area was expanded with increase of metal ions concentration. It is considered that the expansion of molecular area is due to electrostatic repulsion between the polymer chains andhydrophobic increase of ionic strength. In the frequency-dependent complex dielectric constant at room temperature, the real part of dielectric constant($\varepsilon'$ ) is about 6.0~10.0 in the low-frequency range and is decreasing slowly upto$1O^4$ Hz. It decreased abruptly near$1O^5Hz$ . It seems to be dielectric dispersion in this frequency range. Also, the imaginary part of dielectric constant ($\varepsilon"$ ) shows a peak in$1O^5$ ~$1O^6Hz$ . It seems to be dielectric absorption in this frequency range.ange. -
We have investigated the electrical characteristics of arachidic acid(
$C_{20}$ ), stearic acid(C_{18} and palmitic acid($C_{16}$ ) Langmuir-Blodgett(LB) films because the fatty acid systems have a same hydrophilic group and a different hydrophobic one (alkyl chain length). In this work, fatty acid systems were used as LB films and the status of the deposited films were confirmed by evaluating the capacitance and I-V characteristics. The conductivity of$C_{20}$ ,C_{18} and$C_{16}$ LB films obtained from I-V characteristics were about 5x$10^{15}$ , 3x$10^{14}$ and 9x$10^{14}$ [S/cm], espectively. These results have shown the insulating materials and could control the conductivity by changing the length of alkyl chain. Also, we have confirmed that the barrier height of fatty acid systems were about 1.32- 1.40[eV] and the relative dielectric constant were about 2.9~4.2. These values were almost the same ones obtained from dielectric characteristics. -
The electrical characteristics of fatty acid LB films were investigated to develop the gas sensor using Langmuir-Blodgett(LB) films which have high ordered orientation and ordering structure. The deposition status of fatty acid LB films were verified by the measurements of UV absorbance. The conductivity of fatty acid LB films for horizontal direction at room temperature was about
$10^8[S/cm]$,/TEX>, which was correspond to semiconductor material. The activation energy for fatty acid LB films with respect to variation of temperature was about l.O[eV]. The response characteristics for organic gas were confirmed by measuring the response time, recovery time, and reproducibility of the fatty acid LB films to each organic gas. Also, the penetration and adsorption behavior of gas molecule were confirmed through the organic gas response characteristics of fatty acid LB films with respect to temperature. -
GOD electrochemically immobilized in PPy/GOD complex have an effect on redox properties of the complex. In the cyclicvoltammetry, GOD shows the redox reaction at the potential below -0.6Y vs. Ag/AgCI. That leads to new peaks in the cyclicvoltammograms in additional to typical PPy peaks. The pH of electrolyte solution during potential swing decreased to 4.4, and then increased to 10. That suggests the redox of GOD for the cycling. As the concentration of GOD was increased, the anodic wave of the new peaks was strong as much as increased. GOD obstructs the diffusion of electrolyte anion because of its net chain. Insulating property of GOD is cause that it made the faradic impedance of complex large in charge transfer. It suggests that increase of the concentration of GOD be against electrochemical coupling. Therefore, the concentration of GOD and electrochemical coupling should be dealt with each other. The apparent Michaelis-lenten constant ( K\`
$_{M}$ ) was determined by 30.7 mmol d$m^{-3}$ fur the PPy/GOD complex. The value is of the same order of magnitude as that for soluble glucose oxidase from Aspergillus Niger.r. -
The electrochemical properties of flyash obtained from combustion of fuel in fossil power plants and their performance as anode material of secondary battery have been investigated Various flysh pellets molded at various molding pressure have been used as anode lithium secondary battery. The best Performance was achieved when flyash pellet molded at pressure of 400kgf/
$\textrm{cm}^2$ is utilized, that is, charge capacity of 300kgf/$\textrm{cm}^2$ and Coulombic efficiency of larger than 95% have been achieved. In addition, this battery exhibited good cycling performance. Considering these results, we predicted that utilization of the flyash as anode material and polyaniline conducting polymer as cathode material in a secondary will show capacity of 300mAh/g and Coulombic efficiency of higher than 95%. -
Synthetic diamond films have been deposited on the silicon(100) surface and molybdenum substrates using an microwave plasma enhanced vapor deposition (MWPECVD) method. The effect of deposition time, surface morphology, X-ray diffraction pattrm, infrared transmittance and Raman Scattering have been studied, The diamond film deposited on Mo substrate for (100) hours at 40 torr H
$_2$ -CH$_4$ O$_2$ gas system have been shown 1${\mu}{\textrm}{m}$ /h of growth rate and good crystallization -
Si direct bonding (SDB) technology is very attractive for both Si-on-insulator(SOI) electric devices and MEMS applications because of its stress free structure and stability. This paper presents on- pre treatment conditions in Si wafer direct bonding, The paper resents on pre-bonding according to HF pre-treatment conditions in Si wafer direct bonding. The characteristics of bonded sample were measured under different bonding conditions of HF concentration, applied pressure and annealing temperature(200~ 100
$0^{\circ}C$ ) after pre-bonding. The bonding strength was evaluated by tensile strength method. The bonded interface and the void were analyzed by using SEM and IR camera, respectively, Components existed in the interlayer were analyzed by using FT-IR. The bond strength depends on the HF pre-treatment condition before pre-bonding(Min 2.4kgf/$\textrm{cm}^2$ ~ Max : 14.kgf/$\textrm{cm}^2$ ) -
Thin Films of BaYTiO system were Prepared by frequency (rf)/dc magnetron sputtering method. The preparation of target were accomplished by the mixed oxide method, and their composition consisted of the
$Ba_{0.997}$ $Y_{0.003}$ Ti$O_3$ +0.5$SiO_2$ +x$M_{n}$ O(x=0, 0.073, 0.1, 0.127, 0.154). The average particle size of (Ba,Y)Ti$O_2$ system ceramics with Mn$O_2$ additives increases as the amount of MnO additives increase and reaches the maximum grain growth when the amount of MnO is 0.127(mol%).).).). -
In this paper, we investigated the characteristics of MgO thin film prepared by unbalanced magnetron sputtering(UBMS) in surface discharge type AC PDP The minimum discharge voltage is obtained for the sample of substrate bias voltage-10V. Moreover the anti-sputtering characteristics of MgO thin film by UBMS is improved about 40% than one of balanced magnetron sputtering(BMS)
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Surge arrestor is used for protection of facilities and lines. Recently lots of arresters fatted prematurely In the distribution lines. It is important to know that what the cause of the failures is. This paper presents characteristics of the aged and new 18kV surge arrester. In order to analyse characteristics, we measured leakage current using specialty made leakage current measurement system and also investigated Tan
$\delta$ of the arrester and microstructure of the elements. Through the investigation we found that the characteristics among the ZnO elements in an arrester were a little different, It means that the surge arreste can have non-uniform electric field due to the characteristic difference of The each element. Owing to this concentration of the electric field, the localized aging might be proceeded. -
Electron swarm parameterdthe drift velocity and longitudinal diffusion coefficienthn
$SiH_4-Ar$ mixtures containing 0.5% and 5% monosilane were measured using over the range of E/N from 0.01 to 300 Td at room temperature. Electron swarm parameters in argon were drastically changed by adding a small amount of monosilane. The electron drift velocity in both mixtures showed unusual behaviour against E/N. It had negative slope in the medium range of E/N, yet the slope was not smooth but contained a small hump. The longitudinal diffusion coefficient also showed a corresponding feature in its dependence on E/N. A two-tern approximation of the Boltzmann equation analysis and Monte Carlo simulation have been used to study electron transport coefficients. -
Until now, there is no report for the relationship between the condition of addressing and the characteristics of surface discharge in ac-PDP. We have known that such these experiment was important to drive ac PDP Therefore, this paper deals with the probability of transfer and the character of luminance according to addressing voltage(Va) and blocking voltage(Vg) in addressing period and sustain voltage in sustaining period and we use waveform according to ADS(Address and Display period Separation) method
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In ac PDP(plasma Display Panel), the discharge characteristics is very important to display clear images. In this paper, we have studied the measurement of voltage transfer curves which show the discharge characteristics in AC PDP. The change of the effective wall capacitance during a discharge is also studied. These depend on lateral spreading of charge distribution and the strength of the discharge. As a parameter of the frequency, we observed the effects of the frequency in voltage transfer curves and in effective wall capacitance changes. As frequency increases, minimum sustain voltage and firing voltage decrease. In upper region of gap voltage the chance of the effective wall capacitance is independent of frequency.
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In this paper, a new method for calculating capacitance in arbitrarily shape structure is Presented. This new approach based on divergence theorem of Gauss\`s law is acheive by Surface-Contacted Element(SCE) for Gaussian surface. To evaluate accurate capacitance value in nonuniform electric field. in two dimensional analysis the interpolation using the elements which contact one nod (PE: Point-Element) or two nod (FE: Face-Element) is employed. Because the elements contacted with surface are very small compared with total elements in analytic model, SCE method has shorter computing time to calculate capacitance. This proposed method is verified by comparing the simulated results with value obtained by analytic method.
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Power transformers have a tendency of ultra-high voltage and huge capacity as power demand increases day after day. Therefore, the fault by insulation destruction gives rise to large area of power failure in huge capacity transformers. On-line predictive diagnostics is very important In power transformers because of economic loss and its spreading effect. Hence, this study presents experiments of partial discharge method using ultrasonic sensor in order to confirm the possibility of ultrasonic sensor in power transformers. It carries out the experiments of measuring delay time between ultrasonic sensor and transducer, sensitiities by temperature change of oil and by barriers inside transformers. It is also Included wave analysis by ultrasonic sensor for needle-plate electrode powered on through high-voltage equipments.
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Experimental Investigations were carried out to remove NOx, SOx simultaneously from simulated flue gas[NO(0.02%)-SO
$_2$ (0.08%)-$CO_2$ -Air-$N_2$ ] by using a plasma chemical reaction. Ammonia gas(14.81%) balanced by argon was diluted by all and was Introduced to mall simulated flue gas duct through NH$_3$ Injection system which is in downstream of reactor. The NH$_3$ molecular ratio(MR) was determined based on (NH3) to [NO+S0$_2$ ]. MR is 1, 1.5, 2.5. The NOx removal rate significantly increased with increasing NaOH bubble quantity. The SO$_2$ removal rate was not significantly effected by applied voltage, however it fairly Increased with increasing NH$_3$ molecule ratio. By-product aerosol particle was observed by XRD(X-ray diffraction) after sampling, The NOx, SOx removal rates, when H2O vapour bubbled by dry all was injected to plasma reactor, were better than those of other cases. When aqueous NaOH solution(20%) bubbled by 2.5( ι /min) of$N_2$ and 0.5 ( ι /min) NH$_3$ (MR=1.5) were injected to simulated flue gas, The NOx. SOx removal rate was 95 ~ 100[%] -
Many researcher make efforts to develop an effective tracking method of accellatinn combined with the field simulation in actual system. Specially, the procelain type insulator is required exchanging to EPDM/SIR polymer insulator according to the recently environmental consideration. In this paper, we have developed the estimation system using the SD testing and the fractal mathematics. Those approach has been very successful to relative applied to the various parctical problem
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According to development of power electric technology from industrial field to electronic home appliances, recent SMPS using semiconductor is spread widely. Electric converting instrument uses a sine wave voltage source, namely an usual power source, and it gets a non-sines power source from power source because current flows through one part in waveform of one cycle. This injects higher harmonic source in source part, absorb pollution source. And this cause quality deterioration, durability shortage of electric power instrument, spreading accident of electric solver system, and so on. It can't supply an electric source of good quality in industry, so become an impedimental element in improving productivity and reliance. This study can be used in prediction of hindrance and diagnosis material and intends to suggest a countermeasure about measurement data.
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This paper indicate that phase resolved partial discharge patterns are investigated on PET films containing artificial void of varing dimensions. In this study, we measured phase-resolved PD patterns and statistical parameter from PET specimens with IGT(insulation/airgap/insulation) structure by IEC 270 standard. Measurement system is the conventional PD detector using digital signal processing technique. The relationship of diameter and location of artificial void was discussed through the difference of
$\pi$ -q-n distribution and statistical analysis. -
Ultrafine NiO/YSZ (Yttria-Stabilized Zirconic) composite powders were prepared by using a glycine nitrate process (GNP) for anode material of solid oxide fuel cells. The specific surface areas of synthesized NiO/YSZ composite powders were examined with controlling pH of a precursor solution and the content of glycine. The binding of glycine with metal ions occurring in the precursor solution was analyzed by using FTIR. The characteristics of synthesized composite powders were examined with X-ray diffractometer, a BET method with
$N_2$ absorption, scanning and transmission electron microscopies. Strongly acid precursor solution increased the specific surface area of the synthesized composite powders. This is suggested to be caused by the increased binding of metal ions and glycine under a strong acid solution of pH=0.5 that lets glycine consist of mainly the amine group of NH$_3$ $^{+}$ After sintering and reducing treatment of NiO/YSZ composite powders synthesized by GNP, the Ni/YSZ pellet showed ideal microstructure very fine Ni Particles of 3-5${\mu}{\textrm}{m}$ were distributed uniformly and fine pores around Ni metal particles were formed, thus, leading to an increase of the triple phase boundary among gas, Ni and YSZ.Z. -
In this paper, we have provided the measurement technique of the grounding mesh resistance by field measurements. The standard of measurement is specified in the IEEE Std 81.2-1991 and JEAC 5001-1988, which is the the fall-of-potential method by test-current injection, but this method is difficult to apply at field, where is small around a electric power substation of domestic. For the convenient measurement method, space of assistant probe and quantity of test-current injection are changed step for step. As the result, ' the proposed measurement technique of grounding mesh resistance is that the space of current and potential probes must be fixed at 150rn from a grounding mesh, the test-current injection has to keep 5A or more.
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MPPO(Modified-Polyphenylene Oxide) was irradiated with helium, nitrogen, and argon ions at the ion energy of 50 keV and 70 keV from the dose region of 5
$\times$ 10$^{15}$ to 5$\times$ 10$^{16}$ ions/$\textrm{cm}^2$ . The resistance of the irradiated MPPO surface could be decresed about 10$^{10}$ to 10$^{7}$ $\Omega$ /sq with increasing the total ion dose and ion energy. Chemical characteristics of the irradiated surface were analyzed by XPS(X-ray photoelectron spectroscopy). -
An EM pump is used for the purpose of transporting the electrically conducting liquid sodium of the high temperature that is used as a coolant in the liquid metal reactor. In the present study, the pilot pump has been designed and manufactured for the high temperature of
$600^{\circ}C$ by the equivalent circuit materials and the consideration of the materials and functions. The length and diameter of the pump are given as 84 cm and 10 cm each due to the fixed geometry of the circulation system to be installed. The characteristic of the developing pressure and efficiency is found out by using Laithewaite\`s standard design formula. It is shown that the developing pressure and efficiency are maximized at the frequency of 15 Hz from the curve. The annular channel gap of 3.95 mm is selected in the range of the reasonable hydraulic frictional loss. The components of the pump consist of the material for the high temperature. And then, the pump is manufactured to have the nominal flowrate of 40 1/min and developing Pressure of 1.3 bar. -
This work characterized in terms of the reduction of exposure dose by use of the heavy elements filter in the diagnostic radiology. They contained heavy elements filter of Ho and X-ray beam harding filters such as Al and Cu. From the results of experimental evaluation, it was founded that in the case of the Ho filter, X-ray property was not changed with variety of kVp. The surface dose and absorption dose was increased in order of Cu, He and Al. The contrast of image showed the higher value in order of Cu, Al and Ho.
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Melting behavior and bridge phenomenon of solder paste, which is essential for surface mount technology in packaging, were investigated. solder paste of Sn-37%Pb was printed on Sn-coated Cu-pattern of PCB, and heated over melting point. Melting behavior of the paste was observed using CCD-camera. In order to modelize the melting and agglomeration phenomena of the paste, two solder balls of 0.76mm diameter were used. As experimental results, the paste start to melt from the margin of the printed shape. The hight of the melted paste decreased from 270
$\mu$ m to 200$\mu$ m firstly, and finally recovered to 250$\mu$ m. During the melting procedure, pores were evolved from the molten paste. Bridge Phenomenon of the molten Paste depends upon the pitch of the pattern. -
In this paper, we were evaluated dielectric properties and temperature dependency in aging semifilm and PET film. According to humidity, dielectric properties of PET film increased, but tan
$\delta$ presented a constant transition. According as temperature increased, tan$\delta$ increased from 1.9$\times$ 10$^{-3}$ to 2.76$\times$ 10$^{-3}$ and capacitance increased from 244.1(PF) to 297.5(PF). -
In this paper, The relationship between device performance and channel length(1.5-50
$\mu$ m) in polysilicon thin-film transistors fabricated by SPC technology was Investigated by measuring electric Properties such as 1-V characteristics, field effect mobility, threshold voltage, subthreshold swing, and trap density in grain boundary with channel length. The drain current at ON-state increases with decreasing channel length due to increase of the drain field, while OFF-state current (leakage current) is independent of channel length. The field effect mobility decrease with channel length due to decreasing carrier life time by the avalanche injection of the carrier at high drain field. The threshold voltage and subthreshold swing decrease with channel length, and then increase in 1.5$\mu$ m increase of increase of trap density in grain boundary by impact ionization. -
절연재료의 성능 개선과 전력계통의 신뢰성을 확보하기 위해 고분자 재료가 많이 사용되고 있다. 고분자 절연재료는 절연저항 및 절연파괴 강도가 우수하며, 유전손실이 낮고 기계적 강도가 우수하며 대량생산 및 제조가 용이하고, 경량이며 유지비용이 절감되는 등의 장점이 있으나 연구의 역사가 짧고 운전 실적이 적어 불분명한 점이 많으며, 내열성 및 내트랙킹성이 비교적 약하며 표면에 오손이 축적되어 열화가 발생, 진행되거나 수분침투에 의한 파괴사고가 발생하는 단점이 있다. 따라서, 고분자 절연재료의 기본적인 화학적 구조 및 인공적 인 오손 환경을 만들어, 오손 환경의 농도 및 시간대별로 오손환경하에서 우수한 특성을 보이는 샘플을 이용하여 LDPE전체에 대한 실험을 진행했다. 또한 측정법으로서는 화학적인 구조 및 함량을 측정하기 위하여 FT-lR, DSC, TGA를 이용했고, 전기적인 측정으로서는 각각의 조건별로 전도도 및 부분방전특성을 평가하였다.
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This study has been investigated that traps generated inside of the oxide and at the oxide interfaces by the stress bias voltage. The traps are charged near the cathode with negative charge and charged near the anode with positive charge. The charge state of the traps can easily be changed by application of low voltages after the stress high voltage. These trap generation involve either electron impact ionization processes or high field generation processes. It determined to the relative traps locations inside the oxides ranges from 113.4
$\AA$ to 814$\AA$ with capacitor areas of 10$^{-3}$ $\textrm{cm}^2$ . The oxide charge state of traps generated by the stress high voltage contain either a positive or a negative charge. -
Electrical properties of metal-ferroelectric-semiconductor field effect transistor(MFSFET) using
$BaMgF_4$ thin films grown on p-Si(100) substrates have been investigated.$BaMgF_4$ thin films have been directly deposited on the p-Si(100) wafers at a low temperature of$300^{\circ}C$ in an ultra high vacuum(UHV) system. First an in-situ post-deposition annealing was conducted for 20s at$650^{\circ}C$ and second an in-situ post-annealing was conducted for 10s at$950^{\circ}C$ . The electrical properties of MFSFET compared with using A1 and Pt electrodes. -
CeO
$_2$ thin films have used in wide applications such as SOI, buffer layer, antirflection coating, and gate dielectric layer. CeO$_2$ takes one of the cubic system of fluorite structure and shows similar lattice constant (a=0.541nm) to silicon (a=0.543nm). We investigated CeO$_2$ films as buffer layer material for nonvolatile memory device application of a single transistor. Aiming at the single transistor FRAM device with a gate region configuration of PZT/CeO$_2$ /P-Si , this paper focused on CeO$_2$ -Si interface properties. CeO$_2$ films were grown on P-type Si(100) substrates by 13.56MHz RF magnetron sputtering system using a 2 inch Ce metal target. To characterize the CeO$_2$ films, we employed an XRD, AFM, C-V, and I-V for structural, surface morphological, and electrical property investigations, respectively. This paper demonstrates the best lattice mismatch as low as 0.2 % and average surface roughness down to 6.8$\AA$ . MIS structure of CeO$_2$ shows that breakdown electric field of 1.2 MV/cm, dielectric constant around 13.6 at growth temperature of 200$^{\circ}C$ , and interface state densities as low as 1.84$\times$ 10$^{11}$ cm$^{-1}$ eV$^{-1}$ . We probes the material properties of CeO$_2$ films for a buffer layer of FRAM applications. -
PMOS capacitors with Ce-policide electrode were fabricated by the SADS method to study the effects of activation condition on the C-V characteristics. For the activation temperature of
$600^{\circ}C$ , the capacitor using CoSi$_2$ formed from Co/Ti bilayer as diffusion source showed excellent C-V properties and the increase in V$_{th}$ with the increasing activation time. But impurties into the oxide.e. -
III-V족 화합물 반도체인 p-CaP의 자연산화막윽 30%
$H_2O$ $_2$ 용액 내에서 화학적인 이온반응을 통한 전기분해의 원리를 이용한 양극산화방법으로 형성하여 그 성장률과 광학적성질을 조사하였다. GaP자연산화막의 형성은 산소의 확산과정으로 이루어지며, 양측산화 막의 두께는 산화시간과 인가전압에 대하 여 선형적으로 비례하여 증가하였다. 자연산화막의 표면은 전자현미경으로 산화막의 두게는 파장이 6328$\AA$ 인 Ellipsometer를 사용하여 측정하였다. 광학적 성질은 적외선 영역에서의 광흡수 특성은 퓨리에 적외선 분광기로 측정하였으며 XRD 로 전압과 시간에 따른 산화막에 조성과 결정면을 알아보았다. 산화막의 형성방법과 형성조건에 따른 GaP 자연산화막의 절연막으로 이용하여 산화막에 조성에 따른 MOS 다이오드로서의 이용 가능성을 조사하였다. -
The undoped-InSe and Sn-doped InSe single crystals were grown by vertical Bridgman method and their properties were invesigated. These crystals were obtained by lowering the quartz ampoule for growth in the furnace and growth rate at optimum condition is 0.4mm/hr. The orientations and the crystallinites of these crystals were identified by X-ray diffraction(XRD), double crystal rocking curve(DCRC) and etch-pit density(EPD) measurements. From the Raman spectrum at room temperature, TO, LO modes together with their overtones and combinations were observed. Optical properties were investigated by photoluminescence at 12K and direct band gap of these crystals obtained from optical absorption spectrum. Compared with undoped-lnSe, electrical properties of Sn-doped InSe were increased and the electrical conductivity type were n-type. But electrical properties along growth direction of crystals and radial direction of wafer showed nearly uniform distribution.
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In this paper, the effects of back-gate bias on n-channel SOI MOSFETs has been systematically investigated. Back-gate surface is accumulated when negative bias is applied. It is found that the driving current ability of SOI MOSFETs is reduced because the threshold voltage and subthreshold slope are increased and transconductance is decreased due to the hole accumulation in Si body.
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The effects of alternate bias stress on p-channel poly-Si TPT's has been systematically investigated. It has been shown that the application of alternate bias stress affects device degradation for the negative bias stress as well as device improvement for the positive bias stress. This effects have been related to the hot carrier injection into the gate oxide rather than the generation of defect states within the poly-Si/SiO
$_2$ under bias stress. -
Ni/3C-SiC 옴믹 접합에 대한 미세구조적-접합 특성과의 상관관계를 규명하였다. 3C-SiC 웨이퍼 위에 저저항 전면 옴믹 적합층을 형성하기 위하여 Ni(t=300
$\AA$ )을 thermal evaporator를 사용하여 증착하고, 50$0^{\circ}C$ , 80$0^{\circ}C$ , 103$0^{\circ}C$ 온도에서 30분간(Ar 분위기) 열처리 한 후, scratch test를 실행하여 Ni/3C-SiC의 접착력 특성을 조사하였다. 여러 다른 온도에 따른 Ni/3C-SiC 층의 표면과 계면의 미세구조는 X-ray scattering 법을 사용하였다. 50$0^{\circ}C$ 에서 열처리된 Ni/3C-SiC 층은 가장 낮은 계면 평활도와 가장 높은 표면 평활도를 나타내었다. Ni/3C-SiC 접착력 분석에서 500$^{\circ}C$ 열처리된 시편의 측정된 임계하중 값은 As-deposited 시편(12 N~ 13 N)보다 훨씬 낮은 2 N~3 N 범위의 값을 보였으나, 열처리 온도가 증가함에 따라 다시 높아지는 경향을 보였다. 미세구조 특성에서는 열처리 온도가 500$^{\circ}C$ 이상에서는 NiSi$_2$ silicides의 domain size는 결정성의 향상에 따라 증가되었다. 결정성 향상이 3C-SiC와 silicides 사이의 격자상수의 낮은 불일치를 완화시키는데 기여 하였 다. -
This paper reports on the fabrication and characteristics of recessed gate GaN MESFETs fabricated using a photoelectrochemical wet etching method. The unique etching process utilizes photo-resistive mask and KOH based etchant. GaN MESFETs with successfully recessed gate structure was characterized in terms of dc and RF performance. The fabricated GaN MESFET exhibits a current saturation at
$V_{DS}$ = 4 V and a pinch-off at$V_{GS}$ =-3V The peak drain current of the device is about 230mA/mm at 300 K and the value is remained almost same for 500K operation. The$f_{T}$ and$f_{max}$ from the device are 6.357Hz and 10.25 GHz, respectively.y.y. -
In the shallow trench isolation(STI) chemical mechanical polishing(CMP) process, the key issues are the optimized thickness control within- wafer-non-uniformity, and the possible defects such as nitride residue and pad oxide damage. These defects after STI CMP process were discussed to accomplish its optimum process condition. To understand its optimum process condition, overall STI related processes including reverse moat etch, trench etch, STI filling and STI CMP were discussed. It is represented that the nitride residue can be occurred in the condition of high post CMP thickness and low trench depth. In addition there are remaining oxide on the moat surface after reverse moat etch. It means that reverse moat etching process can be the main source of nitride residue. Pad oxide damage can be caused by over-polishing and high trench depth.
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The effect of the heat treatment on electrochromic properties of
$MoO_3$ thin films is investigated by studing optical modulation, optical density, response time, and cyclic voltammetry. From the results of XRD analysis, heat-treated at$450^{\circ}C$ in air for 1 hour$MoO_3$ thin films are found to be crystalline while as-deposited film and heat-treated at low temperature (${\leq}300^{\circ}C$ ) are amorphous. The electrochrornic devices using as-deposited$MoO_3$ films exhibits good electrochromic properties compare to those using the heat treated$MoO_3$ films. It has shown that the heat-treatment affected the stability and the electrochromic properties of$MoO_3$ films. -
Ferroelectric Sr
$_2$ (Nb, Ta)$_2$ O$_{7}$ (SNTO), La$_2$ Ti$_2$ O$_{7}$ (LTO) thin films were prepared by sol-gel processes. SNTO, LTO thin films were spin-coated on Pt/TiO$_2$ /SiO$_2$ /Si(100). Pt/Ti/SiO$_2$ /Si(100). PT/ZrO$_2$ /SiO$_2$ /Si(100) substrates. After multiple coating, dried thin films were heat-treated for decomposition of residual organics and crystallization. Dielectric and other relevant electrical properties were measured and the results showed a little possibility in ferroelectric gate random access memory devices.ces. -
High voltage motor(rated 6.6kV and 448kw) has failed in the stator endwinding area during normal service. Experiments on microstructure property were conducted using the control and aged insulations, which were drawn out from stator windings of the high voltage motor. The analyses were characterized using stereozoom microscope(SM), scanning electron microscope(SEM) and energy dispersive X-ray spectroscopy(EDS). SM result shows that large voids are present in the interface between turn insulation and groundwall insulation. SEM results indicated that the groundwall insulation is rarely thermal stress. EDS results showed that chemical elements in the high voltage motor stator insulations were Al, Si, O, K and Fe.
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This paper describes the properties of discharge current and the residual voltage for
$^{60}$ C$_{0}$ -${\gamma}$ irradiated cables using in nuclear power generating station. As these properties related with$^{60}$ C$_{0}$ -${\gamma}$ -irradiatiation dose, it is suggested that these properties can be utilized as a index of irradiation degradation. As the ratio of degradation increases, the residual voltage in the initial time range increases and the peak moves to the shorter time. Therefore, I know the degree of radiation degradation from the position of the peak. -
The electrical characteristics of 3 year field-aged polymer insulators which dismounted from five regions were investigated. There was a little difference in PD inception voltage depending on the manufacturers and the regions. The results between PD and SD showed a close relation. There were no significant changes in electrical properties. So, it can be considered that the field-aged insulators are sound for the present.
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Epoxy resin has been used as matrix resin of advanced composites owing to ideally suitable properties and inherent physical and chemical properties for electrical and electronic insulation In this paper, in order to evaluate the performance of epoxy composites for out door insulation, variations of tracking resistance were investigated on the moisture absorption aging condition. Also, IPN methods were introduced in order to improve performance for out door use. As a result, it was confirmed that tracking resistance were degraded with boilling time. But, it was confirmed that specimen of IPN structure and KC-335 have the better tracking resistance properties than SIN structure by moisture absorption aging
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In this Paper, the variable dielectric breakdown strengths of epoxy composites were investigated at belling absorption condition in order to observe the influences of moisture in out door use. Also. in order to improve withstand voltage properties at moisture absorbtion condition, IPN(interpenetrating polymer network) method was Introduced and the Influence was investigated. As Adding filler(SiO
$_2$ ) classified by o(phr), 50(phr) and 100[phr] to two kinds of matrix resin, six kinds of specimens were manufactured. As a result, it was confirmed that dielectric breakdown strength wer degraded with boiling time and filer content increasing. But, it was confirmed that dielectric breakdown strength degrading rate were lowered by the Improvement of adhesion strength in IPN specimens. -
In power cable joints, the interfaces of two different dielectric materials are inevitable. In addition, the interfacial breakdown between two internal dielectric surfaces represents one of the major causes of failure for power cable joints. We chose epoxy/EPDM interface, one of the interface in cable joints, and investigate dielectric interfacial breakdown phenomenon. First, design specimen with Flux 2D. Second, find interface condition which has high dielectric strength. Third, investigate interfacial breakdown properties with variable temperature.
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Physical properties of glass fiber-reinforced nylon 6,6 and ionomer blends were investigated in variation of ionomer and glass fiber content. With the increase of ionomer content, tensile strength, impact strength and flexural strength decreased, whereas increasing glass fiber content, these properties were improves. Both permittivity and tan
$\delta$ remain unchanged. Space charge distribution was investigated by PEA (Pulsed electroacoustic) method. Heterocharge was found in nylon 6,6 and 히ass fiber composites, whereas composites, whereas when ionomer is blended. -
In order to determine what indluences the interfacial breakdown in EPDM/XLPE laminates. We studied the interfacial breakdown phenomena at several interfacial conditions. Breakdown strength in laminates pasted with silicone oil was higher than that with silicone grease. As a function of heat treatment time in a vacuum, interfacial breakdown strength increased much in XLPE/EPDM laminates pasted with silicone grease but increased a little in that with silcone oil. FT-IR spectrum of silicone oil was similar to that is silicone grease. FT-lR spectrum of silicone oil was not changed by the heat treatment in a vacuum, but in silicone grease another peak appeared.
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To develop the better insulants. the zeolite particle, which is aluminosilicate mineral, was filled In the DGEBA/MDA/SN epoxy resin system. Dynamic DSC curves of cured specimens with various contents of zeolite were observed and the glass transition temperature(T
$_{g}$ ) was obtained. According to this result, we could carry out the experiment concerned with the dielectric breakdown strength around T$_{g}$ and find the limit temperature for the application of the DDEBA/MDA/SN system filled with natural zeolite. T$_{g}$ increased with the content of zeolite. As the temperature increased, the dielectric breakdown strength decreased rapidly, in the region of T$_{g}$ . At the high temperature, the deterioration by electrical stress was activated. The diameter of puncture at the high temperature was larger 7han that at the room temperature.erature. -
The cure characteristics of metal particle filled DGEBA/MDA/SN/ zeolite epoxy resin composite system for EMI shielding were investigated by dynamic DSC run method and FT-lR spectroscopy. As the heating rate increased, the peak temperature on dynamic DSC curve increased because of the rapid cure reaction. From the straight line of the Kissinger plot, the curing reaction activation energy and pre-exponential factor could be obtained. As the post-curing time at 15
$0^{\circ}C$ increased, the glass increased the glass transition temperature or the thermal stability increased. When the post curing time is too long, the system filled with metallic Al particle can be thermally oxidized by the catalytic reaction of metal filler and the thermal stability of the composite for the EMI shielding application may be decreased. -
In this paper, the volume resistivity properties due to mixture ration of linear low density polyethylene(LLDPE) and ethylene vinyl acetate(EVA) are studied. Electrodes is composed of upper electrode 37(mm
$\Phi$ ), guardring electrode(inner 55(mm$\Phi$ ), and lower electrode 87(mm$\Phi$ In order to measure the leakage current, We used electrometer and stable oven with temperature controller. Measurement method is to measure the leakage current of next specimen after applying the voltage according to 'Step Apply Methods' for ten minutes. In order to measure the volume resistivity properties, the micro electrometer is used, the range of temperature and applying voltage are 25 to 100[$^{\circ}C$ ] to 100[V] respectively. -
In order to investigate the influence on dielectric characteristic due to physical structural change of specimens, we investigated the frequency and temperature dependency of tan
$\delta$ for virgin specimen and mixtured specimens in the temperature range of 25[$^{\circ}C$ ] ~ 120[$^{\circ}C$ ], frequency range of 300(mv) ~ 1500[mV] An experimenatal specimen is selected as Low Liner Density Polyethylene (LLDPE) and Ethylene Vinyl Acetate(EVA) (thickness 200[$\mu$ m]) produced by mixture ratio of 50:50, 60:40, 70:30 and 80:20. From the results of XRD it can be confirmed that the peak of LLDPE and EVA made by mixture ratio of 70:30 at 2$\theta$ = 21.4$^{\circ}$ is higher and the peak made by amorphous contribution at 2$\theta$ = 19.5[$^{\circ}$ ] is almostly constant without no concern. -
In general, the main dielectric materials for EHV electric appliances were epoxy, EPDM and Silicone rubber. The Silicone rubber has been rosed so many among them in EHV appliances in the worldwide, especially in Europe and North America. The reason why it is very stable in the thermal, mechanical and electrical environment. Therefore it is still becoming increasingly widespread in the application of the EHV appliances as a main dielectric material. On this study, investigated about real appliances and tested on basic properties of the Silicone rubber compared to organic dielectric material that is EPDM. At the result, the Silicone rubber is more dominant as main dielectric material for EHV appliances than any other organic polymers.
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In these days, the silicone insulators have been increasingly studied and applied for outdoor insulators because it has superior characteristics than porcelain and glass insulators, which have been used for outdoor insulators. First of all, The excellent performance of the silicone rubber in polluted and wet conditions is attributed to the ability of the material to maintain the hydrophobicity of the surface in the presence of severe contamination and wet conditions. This is because of the presence of low molecular weight mobile fluid in the silicone rubber which diffuses to the surface and to above the contamination layer. But, the leakage current and some surface discharge occurs on surface of the composite polymeric insulation materials when the insulator is used for a long time with severe contaminative condition and it can lead the contamination flashover. So the leakage current and the discharge current are important to estimate the condition of the silicone rubber surface. In this paper, the average leakage current, the relation of surface discharge current and phase angle were study to investigate electrical conduction of silicone rubber surface with the salt fog condition.
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In this paper, by using the electrophoresis, preparation of YBCO superconducting wire deposited on metal Ag base wire was studied with its Properties. YBCO Powder could be prepared by solid state reactions with calcining and sintering processes. Superconducting wire prepared on metal Ag wire used as cathode of deposition base could be also fabricated in the YBCO/acetone-dispersed solution to obtain several tens of re thick films. And then it could be used as superconducting wire for measurement after calcination, sintering and oxygen absorption processes. In the process of film deposition, a catalyst I
$_2$ added into the suspension solution was very useful for preparing thick film of YBCO, and BaF$_2$ of additive material was also necessary for preparing crack-free wire of YBCO superconductor. As a result, YBCO superconducting wire added 2~3wt.% of BaF$_2$ \ulcorner with catalyst, 12 had better deposition condition for uniform and dense YBCO wires, and critical current density, Jc was calculated at the value of 1,458A/$\textrm{cm}^2$ (more than 10$^{3}$ A/$\textrm{cm}^2$ ,77K, o[T]) of 30${\mu}{\textrm}{m}$ thick sample by 4 point prove method. -
In this study, the PPPI(Plasma Polymerized Phenyl Isothiocyanate) resist thin film was manufactured in accordance with the plasma polymerization method and after exposing it to an electron beam, a pattern was formed by plasma etching. With the FT-IR(Fourier transform-infrared spectrometry) analysis, it was confirmed that the PI(Phenl Isothiocyanate) monomer was successsfully produced into a thin film by the plasma. The polymerization rate of the thin film was 450~ 1012(
$\AA$ /min) to 100-200(W) discharge power and 120-12($\AA$ /min) to 0.1 ~0.4[torr] system pressure. -
The Co-Cr-Ta films are one of the most suitable candidates for perpendicular magnetic recording media. The facing targets sputtering(FTS) system has a advantage of preparing films over a wide range of working gas pressure on plasma-free substrates. In this study, we investigated the effect underlayers on the growths layers of Co-Cr-Ta recording layers. The Co-Cr-Ta/Ti(CoCr) double layers were deposited with sputter gas pressure
$(P_N, 0.3-1mTorr)$ by using FTS apparatus at temperature of$40^{\circ}C~-300^{\circ}C$ , respectively. Crystallographic and magnetic characteristics were evaluated by x-ray diffractometry(XRD) and vibrating sample magnetometer(VSM), respectively. -
정보화 사회의 발전과 함께 멀티미디어에 대한 관심이 집중되고 있으며, 점유 공간이 작고 가벼우며 대면적이 가능한 정보 표시 디스플레이에 대한 기술은 고부가가치 산업으로 인식되어 지고 있다. 이러한 정보 표시 디스플레이들 중, 전기 발광 소자 (Electroluminescence Display : ELD), 액정 표시 디스플레이 (Liquid Crystal Display LCD), 플라즈마 디스플레이 (Plasma Display Panel) 등의 대한 연구가 세계적으로 매우 활발하게 진행되고 있다. 본 연구에서는 란탄 계열의 금속 착 화합물인 Tb(ACAC)
$_3$ (Phen)과 Tb(ACAC)$_3$ (Phen-Cl)를 이용해 다비이스를 제작한후 광학적 및 전기적 특성을 조사하였다. 또한 luminous efficiency와 cyclic voltametric 방법을 이용해 에너지 밴드로 두 발광 물질인 Tb(ACAC)$_3$ (Phen)과 Tb(ACAC)$_3$ (Phen-Cl)을 비교.분석하였다. 본 연구의 디바이스 구조를 보면 anode/hole transporting layer (HTL)/emitting material layer (EML)/electron transporting layer (ETL)/cathode와 같고 ETL를 aluminum-tris- (8-hydroxyquinoline) (Alq$_3$ )와 bis(10-hydroxybenzo(h)quinolinato)beryllium (Bebq$_2$ )를 사용하였으며 HTL 로 N,N'-diphenyl-N,N'-bis(3-methylphenyl)-1,1'-biphenyl-4,4'-diamine (TPD)를 사용하였다. -
This paper describes direct
$\mu$ C-Si/CaF$_2$ /glass thin film growth by RPCVD system in a low temperature for thin film transistor (TFT), photovoltaic devices. and sensor applications. Experimental factors in a low temperature direct$\mu$ c-Si film growth are presented in terms of deposition parameters: SiH$_4$ /H$_2$ ratio, chamber total pressure, substrate temperature, rf power, and CaF$_2$ buffer layer. The structural and electrical properties of the deposited films were studied by means of Raman spectroscopy, I-V, L-I-V, X-ray diffraction analysis and SEM. we obtain a crystalline volume fraction of 61%, preferential growth of (111) and (220) direction, and photosensitivity of 124. We achieved the improvement of crystallinity and electrical property by using the buffer layers of CaF$_2$ film. -
This paper presents a process optimization of antireflectiun (AR) coating on crystalline Si solar cells. Theoretical and experimental investigations were performed on a doble-layer AR(DLAR) coating of MgF
$_2$ /CeO$_2$ , We investigated CeO$_2$ films as an All layer because they hale a proper refractive index of 2.46 and demonstrate the same lattice constant as Si substrate. RF sputter grown CeO$_2$ film showed strong dependence on a deposition temperature. The CeO$_2$ film deposited at 400$^{\circ}C$ exhibited a strong (111) preferred orientation and the lowest surface roughness of 6.87$\AA$ . Refractive index of MgF$_2$ film was measured as 1.386 for the most of growth temperature. An optimized DLAR coating showed a reflectance as low as 2.04 % in the wavelengths ranged from 0.4 7m to 1.1 7m. We achieved the efficiencies of solar cells greater than 15% with 3.12 % improvement with DLAR coatings . Further details on MgF$_2$ , CeO$_2$ films, and cell fabrication Parameters are presented in this paper. -
A solar cell conversion efficiency was degraded by grain boundary effect in polycrystalline silicon To reduce grain boundary effect, we performed a preferential grain boundary etching, POC
$_3$ n-type emitter doping, and then ITO film growth on poly- Si. Among the various preferential etchants, Schimmel etch solution exhibited the best result having grain boundary etch depth higher than 10${\mu}{\textrm}{m}$ . RF magnetron sputter grown ITO films showed a low resistivity of 10$^{-4}$ $\Omega$ -cm and high transmittance of 85 %. With well fabricated poly-Si solar cells, we were able to achieve as high as 15 % conversion efficiency at the input power of 20 mW/$\textrm{cm}^2$ . -
Electroluminescence(EL) devices based on organic thin films have attracted lots of interests in large-area light-emitting display. Recently, many EL researcher have interested a new emissive organic material. In this study, light-emitting organic electroluminescent devices were fabricated using Langmuir-Blodgett(LB) technique with new emissive organic material. This new emissive organic material were synthesis by our teams and we called PECCP [poly(3,6-N-2ethylhexyl carbazoly cyanoterephthalidene)] which has strong electron donor group and electron acceptor group in main chain repeat unit. This material has good solubility in common organic solvent such as chloroform. THF, etc. and has a good stability in air. In here, the new emissive material is applied to Langmuir-Blodgett(LB) method because our new material has a good stability in air. Optimum conditions of film deposition were examined by a surface pressure-area(
$\pi$ -A) isotherms with various factors. The LB film were deposited on a indium Tin Oxide(ITO) glass. We were investigated by measuring current-voltage(I-V) characteristics. Also we were measured the UV/visible absorption at about 410nm and PL spectrum at about 530nm. We are attempt to the electroluminescence device properties of the new emissive material by Langmuir-Blodgett(LB) technique. -
We report investigations on a Pentacene thin film as a component for active layer of Organic thin film transistors. Pentacene film was deposited by Organic Molecular Beam Deposition(OMBD) and Al electrode was deposoted by vacuum evaporation. Electrical characterization of Pentacene films were measured by the three-terminal contact resistance methods, as the results contact resistance between pentacene films and the Aluminium electrode is 5.064G
$\Omega$ . The Al contact with the pentacene shows the bottom contact resistance. From the current-voltage characteristics, electrical conductivity of the Pentacene film is found as ~ 10$^{-4}$ /cm. physical characterization of pentacene films were measured by UV-spectrum and Cyclic-Voltammetry method. -
Organic electroluminescent(EL) devices have received a great deal of attention due to their potential application as full-color displays. They are attractive because of their capability of multicolor emission, ease of fabrication, and operation at a low driving voltage. In this study, single and multiple quantum-well structures consisting of Eu(TTA)
$_3$ (bpy) complex well layer sandwiched between triphenyldiamine derivative (TPD) layers were fabricated and their photoluminescent electroluminescent characteristics were also investigated. Sharp emission at 616 nm has been observed from the Eu complex in multilayer, single and multiple quantum-well structures. Details on the explanation of electrical properties of these structures will be discussed. -
An active-matrix LCD using thin film transistors (TFTs)has been widely recognized as having potential for high-quality color flat-panel displays. Pixel-Design Array Simulation Tool (PDAST) was used to profoundly understand the gate signal distortion and pixel charging capability, which are the most critical limiting factors for high-quality TFT-LCDs. Since PDAST can simulate the gate data and pixel voltages of a certain pixel on TFT array at any time and at any location on an array, the effect of the new set of capacitance models on the pixel operations can be effectively analyzed, The set of models which is adopted from VLSI interconnections calculate more precise capacitance. The information obtained from this study could be utilized to design the larger area and finer image quality panel.
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In this study, the polarization e(fecal and the birefringence effect of amorphous germanium (a-Ge) thin films were investigated by using linearly polarized He-Ne laser beam. The a-7e thin films were deposited on the quarts substrate by plasma enhanced chemical vapor deposition (PECVD) and thermal vacuum evaporation In order to obtain the optimum grating arrays, inorganci resists such as Si
$_3$ N$_4$ and a-Se$_{75}$ Ge$_{25}$ , were prepared with the optimized thickness by Monte Carlo (MC) simulation. As the results of MC simulation, the thickness ofa-Se$_{75}$ Ge$_{25}$ resist was determined with Z$_{min}$ of 360$\AA$ . The resists were exposed to Ga$^{+}$ -FIB with accelerating energies of 50 keV, developed by wet etching, and a-Ge thin film was etched by reactive ion-etching (RIE). Finally, we were obtained grating arrays which grating width and linewidth are 0.8${\mu}{\textrm}{m}$ , respectively and we studied the polarization and birefringence effect in transmission grating array made of high refractive amorphous material, and the applicability as waveplates and polarizers in optical device.e.e. -
Rosen type piezoelectric transformer for LCD backlight operated at high voltage and low current, may not be sucessfully used for illuminating general fluorescent lamps because low voltage and high current are required. In this study, the piezoelectric transformer with width vibration mode operated at low voyage and high current was designed for the application of fluorescent lasso ballast. The step-up ratio and efficiency as a function of the load resistance in the piezoelectric transformer indicated that the transformer can be effectively used for the electronic ballast for low profile fluorescent lamp.
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In this study, in order to develop high sensitivity and low noise acoustic emission sensor, we manufactured the Pb(Zr, Ti)O
$_3$ ceramics with the addition of WO$_3$ wt% to search for its required characteristics. Dielectric constant was increased as a function of the increase of WO$_3$ wt%. The Pb(Zr, Ti)O$_3$ (EC-65) ceramics added with 0.1lwt% WO$_3$ showed excellent dielectric constant and piezoelectric constants of 1931 and 199.55$\times$ 10$^{-12}$ (C/N), respectively. Accordingly It was shown as the composition ceramics suitable for AE sensor. -
This paper presents a new sort of multilayer piezoelectric ceramice transformer for switching regulatied power supplies. And this paper presents the study and development of a DC-DC converter with a transformer made from piezoelectric materials. This piezoelectric transformer operate, in the second thickness extensional vibration mode. Its resonant frequency is higher than 1MHz, This piezoelectric transformer was used the PbTiO
$_3$ family ceramics because it was a material large anisotropy between electromechanical coupling factors k$_{t}$ and k$_{p}$ . The input and output layer consists of two piezoelectric ceramic layer for eleivater of outpur power.wer. -
The amorphous vanadium oxide as a cathode material is very preferable for fabricating high performance micro-battery. The amorphous vanadium oxide cathode is preferred over the crystalline form because three times more lithium ions can be inserted into the amorphous cathode, thus making a battery that has a higher capacity. The electrochemical properties of sputtered films are strongly dependent on the oxygen partial pressure in the sputtering gas. The effect of different oxygen partial pressure on the electrochemical properties of vanadium oxide thin films formed by r.f. reactive sputtering deposition were investigated. The stoichiometry of the as-deposited films were investigated by Auger electro spectroscopy. X-ray diffraction and atomic force microscopy measurements were carried out to investigate structural properties and surface morphology, respectively. For high oxygen partial pressure(>30% ), the films were polycrystalline V
$_2$ O$_{5}$ while an amorphous vanadium oxide was obtained at the lower oxygen partial pressure(< 15%). Half-cell tests were conducted to investigate the electrochemical properties of the vanadium oxide film cathode. The cell capacity was about 60$\mu$ Ah/$\textrm{cm}^2$ m after 200 cycle when oxygen partial pressure was 20%. These results suggested that the capacity of the thin film battery based on vanadium oxide cathode was strongly depends on crystallinity.y. -
In consideration of Dielectric loss and Temperature stability, 3-element system dopped with NiO,
$Cr_2O_3$ , well-known as Hardner and Stabilizer whose primary element is PZT was eximanated its structure, Temperature Coefficient of Capacitor, relative resistivity for Temperature Compensation condensor study. dopping with Nio,$Cr_2O_3$ , Temperature Characteristic is developed, Dielectric loss largely represented useful1 small values in specimens dopped with NiO 0.2wt%, and specimence sintered at$110^{\circ}C$ dopped with$Cr_2O_3$ , 0.1wt% also relative resistivity largely showed tendency of decrement According to dopping NiO more. -
We have prepared the plasma-polymerized membrane for pervaporation of organic-liquid mixtures by the plasma polymerization technique. Plasma polymerization techniques were utilized in the development of hydrophilic composite membranes having high hydrogen ion permeability and excellent dimensional stability. To develop an organic liquid permselective Membrane, suppressing membrane swearing as well as enhancing the solubility difference is impotant. the objectives of the present study are to disign a suitable membrane for an organic-mixture system by the control of the plasma-polymer solubility.
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With the variation of the sintering temperature and the amounts of B
$_2$ O$_3$ , Bi$_3$ O$_3$ and V$_2$ O$_{5}$ , the densification and the piezoelectric properties of the MnO$_2$ -doped PMN-PZT were investigated. The additives decreased the sintering temperature of ceramics. In the case of 0.5wt% B$_2$ O$_3$ , the sintering density, the mechanical quality factor, the electromechanical coupling factor and the piezoelectric constant were 7.51 (g/㎤), 1397, 51.1% and 305 (X10$^{-12}$ C/N) respectivly at 105$0^{\circ}C$ . And the addition of lwt% Bi$_2$ O$_3$ , they were 7.59 (g/㎤) ,833,49.8% and 308 (X10$^{-12}$ C/N) respectivly at 1000$^{\circ}C$ . -
The (Ba, Sr)TiO
$_3$ (BST) thin films were fabricated on Pt/Ti/SiO$_2$ /Si substrate by RF sputtering technique. The structural properties of the BST thin films were investigated with substrate temperature by XRD, SEM, EDS and AES depth profils. Increasing the substrate temperature, barium multi titanate phases were decreased. The BST thin film had a structure of perovskite type, and had peaks of (100), (200) at the substrate temperature of 50$0^{\circ}C$ . When the BST thin films were deposited at the substrate temperature of 50$0^{\circ}C$ , the composition ratio of Ba/sr was 52/48. -
Effect of
$Al_2O_3$ Additives on Microwave Dielectric Properties of$0.15(Ba_{0.85}Ca_{(0.15-y)}Mg_y)$ -0.125$Nd_2O_3-0.60TiO_2+10wt%Bi_zO_3$ (y=0.05, 0.08) Ceramics was investigated. To control of$\tau\;{f}$ on microwave dielectric properties of$0.15(Ba_{0.85}Ca_{(0.15-y)}Mg_y)$ -0.125$Nd_2O_3-0.60TiO_2+10wt%Bi_zO_3$ ceramics$Al_2O_3$ was doped in the composition range of 0 to 0.15 wt%. As a result, dielectric constant was decreased from 94 to 80 but$Q\cdot{f}_0$ value was increased from 4980 to 5210 GHz and temperature coefficient of resonant frequency can be controlled from +9 to -10$ppm^\circ{C}$ as an increase of$Al_2O_3$ doping concentration. Especially, a new microwave dielectric material having$\varepsilon\;_r=84,\;Q\cdot{f}_0=5120\;GHz\;and\;\tau_f=0\;ppm/^\circ{C}$ was obtained at$Al_2O_3$ doping concentration of 0.08 wt%. -
In this paper, we have investigated YMnO
$_3$ bulk ceramics, which was made by Mixed oxide method, with Y/Mn ratios of 0.80/1.20, 0.90/1.10, 0.95/1.05, 1.00/1.00, 1.05/0.95 and 1.10/0.90. The samples crystall structure with Y/Mn ratios of 0.95/1.05 was hexagonal structure. The physical properties of YMnO$_3$ ceramics were divided into two groups, the sample with Y/Mn ratios of 0.80/1.20, 0.90/1.10 and 0.95/1.05 is classified to Mn rich sample, and with Y/Mn ratios of 1.00/1.00, 1.05/0.95 and 1.10/0.90 is classified to Y rich sample. The sintering and dielectric properties of this sample were summarized as following sintering density of Mn rich sample was increased. Dissipation factor of Mn rich sample was small The dielectric constant, dissipation factor of sample with Y/Mn ratio (0.90/1.10) were 37, 0.017 respectively at measured 1MHz -
The piezoelectric properties and the doping effect of Nb
$_2$ O$_{5}$ for 0.95 PbZr$_{x}$ Ti$_{1-x}$ -O$_3$ +0.05 Pb(Mnsub 1/3/Nb$_{2}$ 3/)O$_3$ compositions have been investigated. In the composition of 0.95PbZr$_{0.51}$ Ti$_{0.49}$ O$_3$ +0.05Pb(Mn$_{1}$ 3/Nb/syb 2/3/)O$_3$ the values of k$_{p}$ and$\varepsilon$ $_{33}$ $^{T}$ are maximized, but Q$_{m}$ was minimized (k$_{p}$ =0.57, Q$_{m}$ =1550). The grain size was suppressed and the uniformity of grain was improves with doping concentration of Nb$_2$ O$_{5}$ far 0.95PbZr$_{0.51}$ Ti$_{0.49}$ O$_3$ +0.05Pb(Mn$_{1}$ 3/Nb/syb 2/3/)O$_3$ . sample. The values of k$_{p}$ first decreased slightly when a small amount of Nb$^{5+}$ is doped and then decreased when the Nb$^{5+}$ concentration is further increased. The Q$_{m}$ . OR the Other hand. increased monotonously with doping concentration of Nb$_2$ O$_{5}$ .{5}$ . . -
Thin films of Pb(Zr,Ti)O
$_3$ were fabricated by means of the sol-gel spin-coating method and the multi-coating of eight coating numbers. The thin films were dried on the temperature range of 250 ~ 400($^{\circ}C$ ), whenever the specimens were dried after each coating Processing. The fabricated ferroelectric thin films of lead zirconate titanate(PZT) were treated with the rapid thermal annealing(RTA) at 650($^{\circ}C$ ),or 3(min), and direct insertion thermal annealing(DITA) at 650($^{\circ}C$ ), for 30(min). The measured properties of dielectric thin films were following: The good results of dielectric properties were shown by the RTA specimen. The saturation polarization(Ps), remanent polarization(Pr), coercive field (Ec), dielectric constant and dielectric loss factor of the RTA specimen were estimated to be about 27.1[$\mu$ C/$\textrm{cm}^2$ ], 13.7[$\mu$ C/$\textrm{cm}^2$ ], 55.6(kV/cm), 786 and 6.4(%) respectively. -
In this paper, we studied the properties of small-size disk-type ultrasonic motor using travelling wave for the application to the precise control robotic joint motor and fabricated it. The diameter of the ultrasonic motor fabricated was 13mm. Also, the piezoelectric vibrator was constructed by piezoelectric ceramic and elastic material. The piezoelectric ceramic was composed to PZ-PT-PMN which was shown the high electromechanical stability under high vibration level and stainless steel was used as the elastic material in which configuration was disk-type. To conform the capability of application to robotic motor, we measured the change of rotational speed according to applied voltage and applied frequency. As the results, the small-size disk-type ultrasonic motor was able to fabricate, and the revolution speed was 350 (rpm) when input voltage was 55 (Vrms) and applied frequency 160.4 IkHz] under pre-load.
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We fabricated green sheet by tape casting method with fluormica glass-ceramic powders for fabrication of low temperature co-firing substrate. After ball milling with organic additives, we investigated green strength and density of green sheets which were casted by doctor blade machine. Green sheets were sintered at 700 ~ 1,00
$0^{\circ}C$ for 1 ~3hrs. Microstructure, linear shrinkage and dielectric constant of substrates were surveyed. -
Rapid developing automation technology enhances the need of sensors. Among many materials, silicon has the advantages of electrical and mechanical property, Single-crystalline silicon has different piezoresistivity on 야fferent directions and a current leakage at elevated temperature, but poly-crystalline silicon has the possibility of controling resistivity using dopping ions, and operation at high temperature, which is grown on insulating layers. Each wafer has slightly different thicknesses that make difficult to obtain the precisely same thickness of a diaphragm. This paper deals with the fabrication process to make poly-crystalline silicon based pressure sensors which includes diaphragm thickness and wet-etching techniques for each layer. Diaphragms of the same thickness can be fabricated consisting of deposited layers by silicon bulk etching. HF etches silicon nitride, HNO
$_3$ +HF does poly -crystalline silicon at room temperature very fast. Whereas ethylenediamice based etchant is used to etch silicon at 11$0^{\circ}C$ slowly. -
N-methyl phenazinium 7, 7, 8, 8-tetra-cyanoquinonedimethane (TCNQ) complex salt was synthesized and bar-coated on PET film using various binders. Optical microscope and SEM reveals that TCNQ complex salt crystals were grown on the surface of binders and the shape was different with binders. The surface resistivity was 1
$^{5}$ $\Omega$ /$\square$ when binders has compatibility with TCNQ complex salt. -
We prepared ZnO thin film with Facing Targets Sputtering system that can deposit thin film in plasma-free situation and change the deposition condition in wide range. And prepared thin films c-axis orientation and grain size were analyzed by XRD(x-ray dffractometer). In the results, we suggest that FTS system is very suitable to preparing high quality ZnO thin film with good c-axis orientation.
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Light was of electric lamp was reflected by bulb reflector. In order to improve the efficiency of the electric lamp. it is inevitable that lamp, it is inevitable that improve the reflectance of bulb reflector. Important factors that affect the reflectance of bulb reflector is working pressure, distance between evaporation source to substrate, the situation of surface of glass. etch rate of glass, etc. In this paper. confirmed the effect of etching, working pressure etc. , and its effect for the reflectance of bulb reflector. Especially, concentration of HF in the etching solution and etching time is to be importnace for characteristic of bulb reflector.
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This paper presents annealing characteristics of CrN thin-film strain gauges, which were deposited on glass by DC reactive magnetron sputtering in an argon-nitrogen atmosphere)Ar-(5-~25%)
$N_2$ . The physical and electrical characteristics of these films investigated with the thickness range 3500$\AA$ of CrN thin films, annealing temperature (100~30$0^{\circ}C$ ) and annealing time (24-72hr) . The optimized condition of CrN thin-film strain gauges were thickness range of 3500$\AA$ and annealing condition(30$0^{\circ}C$ , 48hr) in Ar-10%$N_2$ deposition atmosphere. Under optimum conditions, the CrN thin-films for strain gauge is obtained a high resistivity,$\rho$ =1147.65$\Omega$ cm a low temperature coefficient of 11.17. And change in resistance after annealing for the CrN thin film were quitely linear and stable. -
The electron transport coefficients in
$SF_6+N_2$ gas is analysed in range of E/N values from 100~900(Td) by a Monte Carlo simulation and Boltzmann method, using a set of electron collision cross sections determined by the authors. The result of the Monte Carlo simulation such as electron drift velocity, ionization and electron attachment coefficients, longitudinal and transverse diffusion coefficients in nearly agreement with the respective experimental and theoretical for a range of E/N. -
Thls paper describes the process of corona discharge in
$SF_6$ gas. The discharge characteristm such as electric field distribution, electron density, ion density and current denslty distribution are considered as time go by, The result show that difference between electronegative gas and nonelectronegative gas. -
Partial discharge(PD) in air insulated electric power systems is responsible for considerable power lossesfrom high voltage transmission lines. PD in air often leads to deterioration of insulation by the combined action of the discharge ions bombarding the surface and the action of chemical compounds that are formed by the discharge and may give rise to interference in ommunication systems. PD can indicate incipient failure. Thus understanding and classification of PD in air is very important to discern source of PD. In this paper, we investigated PD in air by using statical method. We classified air discharge with corona, surface discharge and cavity discharge by source of discharge. we used the mean pulse-height phase distribution
$H_{qmean}(\psi)$ , the max pulse-height phase distribution$H_{qmax}(\psi)$ , the pulse count phase distribution$H_n(\psi)$ and the max pulse height vs. repetition rate$H_{q}(n)$ for analysis PD pattern. We used statistical operators, such as skewness(S+. S-1, kurtosis(K+, K-), mean phase(AP+. AP-), cross-correlation factor(CC) and asymmetry from the distribution. -
The Cu/Ni/Au lamellar structure is extensively used as an under bump metallization on silicon file, and on printed circuit board(PCB) pads. Ni is plated Cu by either electroless Ni plating, or electrolytic Ni plating. Unlike the electrolytic Ni plating, the electroless Ni plating does not deposit pure Ni, but a mixture of Ni and phosphorous, because hypophosphite Is used in the chemical reaction for reducing Ni ions. The fracture crack extended at the interface between solder balls of plastic ball grid (PBGA) package and conducting pads of PCB. The fracture is duets to segregation at the interface between Ni
$_3$ Sn$_4$ intermetallic and Ni-P layer. The XPS diffraction results of Cu/Ni/Au results of CU/Ni/AU finishs showed that the Ni was amorphous with supersaturated P. The XPS and EDXA results of the fracture surface indicated that both of the fracture occurred on the transition lesion where Sn, P and Ni concentrations changed. -
Treeing has a profit to observe processing electrical breakdown because it gives degradation steps of insulation material by optical method. But, reappearance properly of treeing is not so good and precise quantization of tree growth is not so easy because tree Patterns are very complicate. The study on tree growth using image processing is predicted to precision of tree degradation and possible to quality measurement of tree pattern. In this paper, degradation steps are analyzed by image processing, therefore precision and realiability of tree growth are increased. Also, processing of tree degradation is quantized by fractal.