Elastic resistive pressure sensor is fabricated by a direct spray coating of silver nanowires (AgNWs) on uncured polydimethylsiloxane (PDMS) and an additional coating of a conductive polymer, poly(3,4-ethylenedioxythiophene): poly (styrene sulfonate) (PEDOT:PSS). To improve the sensitive and stability, we have fabricated sandwich-structured AgNW/polymer sensor where two AgNW/polymer-coated PDMS films are laminated with the conducting surfaces contacted by pressure lamination. It shows a resistance decrease upon loading due to the formation of dense network of AgNWs. It is demonstrated that the sandwich-structured AgNW/polymer sensor exhibits very high sensitivity ($2.59kPa^{-1}$) and gauge factor (37.8) in the low pressure regime. It can also detect a subtle placement and removal of a weight as low as 3.4 mg, the corresponding pressure of which is about 5.4 Pa. It is shown that the protrusion of AgNWs from PDMS is suppressed substantially by the over-coated PEDOT:PSS layer, thereby reducing hysteresis and rendering the sensor more stable.

In this study, we have studied the effect of substrate temperature and hydrogen flow rate on the characteristics of MZO thin films for the TCO(Transparent conducting oxide). MZO thin films were deposited by RF magnetron sputtering at room temperature and $100^{\circ}C$ with various $H_2$ flow rate(1sccm~4sccm). In order to investigate the effect of hydrogen gas flow rate on the MZo thin film, we experimented with changing the hydrogen in argon mixing gas flow rate from 1.0sccm to 4.0sccm. MZO thin films deposited at room temperature and $100^{\circ}C$ show crystalline structure having (002), (103) preferential orientation. The electrical resistivity of the MZO films deposited at $100^{\circ}C$ was lower than that of the MZO film deposited at room temperature. The decrease of electrical resistivity with increasing substrate temperature was interpreted in terms of the increase of the charge carrier mobility and carrier concentration which seems to be due to the oxygen vacancy generated by the reducing atmosphere in the gas. The average transmittance of the MZO films deposited at room temperature and $100^{\circ}C$ with various hydrogen gas flow was more than 80%.

InSb (III-V compound semiconductor) is used for photodiode to detect the mid-wavelength infrared radiation. Generally the quantum efficiency of InSb IR FPAs(Focal Plane Arrays) is known to be determined by thickness of InSb and transmittance of anti-reflection coating layer. In this study, we confirmed that the C-V characteristics of detector array affects the quantum efficiency of the InSb IR FPAs. We fabricated the IR FPAs with various $V_{fb}$(flat band voltage) values and confirmed the tendency between the $V_{fb}$ value and quantum efficiency of the IR FPAs.

The development speed of semiconductor and display device manufacturing technology is growing faster than the development speed of process equipment. So, there is a growing need for process diagnostic technology that can measure process conditions in real time and directly. In this study, a plasma diagnosis was carried out using impedance variation due to the plasma discharge. Variation of the measurement impedance appears as a voltage change at the reference impedance, and the plasma density is calculated using this. The above experiment was conducted by integrating the plasma diagnosis system and the linear atmospheric pressure DBD plasma source. It was confirmed that plasma density varies depending on various parameters (gas flow rate, $Ar/O_2$ mixture ratio, Input power).

In this paper, we have designed circularly polarized array antenna for 5.8GHz microwave wireless power transmission. To obtain high antenna gain, we studied a single patch antenna, a $2{\times}1$ array antenna, a $2{\times}2$ array antenna, a $2{\times}4$ array antenna, and a $4{\times}4$ array antenna. Commonly, characteristics of each antenna have a frequency of 5.8 GHz and Right Hand Circular Polarization(RHCP) of circular polarization. Also, the results were obtained with the design to each antenna that the return loss was less than -10dB and the axial ratio was less than 3dB. The gain of the antennas was 6.08dBi for a single patch antenna, 9.69dBi for a $2{\times}1$ array antenna, 12.99dBi for a $2{\times}2$ array antenna, 15.72dBi for a $2{\times}4$ array antenna and 18.39dBi for a $4{\times}4$ array antenna. When the elements of the array antenna were increased, it was confirmed that it increased by about 3dBi.

In this paper, surface defects and typical illumination mechanisms for steel plates are analyzed, and then optimum illumination mechanism is selected using discrete wavelet transform (DWT) synthetic images and discriminant measure (DM). The DWT synthetic images are generated using component images decomposed by Haar wavelet transform filter. The best synthetic image according to surface defects is determined using signal to noise ratio (SNR). The optimum illumination mechanism is selected by applying discriminant measure (DM) to the best synthetic images. The DM is applied using the tenengrad-euclidian function. The DM is evaluated as the degree of contrast using the defect boundary information. The performance of the optimum illumination mechanism is verified by quantitative data and intuitive image looks.

The current voltage characteristics of ZTO/SiOC were researched, and the conductivities of the ZTO films as a channel material were analyzed. The current of SiOC was abruptly decreased near 0V, and then the depletion layer was formed by the disappearance of charges in the region form -12V to +12V. SiOC with Schottky contacts near ${\sim}10^{-9}$ A had the cutoff effect of leakage currents. The conductivity of ZTOs prepared on SiOC was improved in the cutoff region of the leakage current of -12V

Point LED applied in Korea is applied to communication RCLED, but it is designed to be suitable for communication, so it does not meet requirements in fiber coupling rate and optical output. - Currently, domestic optical pipe manufacturers use general LEDs for light emitting devices, but Japanese products use high power point LEDs to develop superior point LED (RED 620 ~ 660nm).

This paper proposes a new method for the number recognition on dot matrix LED display. The proposed method uses morphological processing that dilates dots of numbers and connects the dots into strokes. The size of numbers is normalized using horizontal projection because the gaps of dots are different according to the size of numbers. The numbers are segmented by connected component analysis and finally, template matching method recognizes the segmented numbers. The proposed method is implemented using C language in Raspberry Pi system with a camera module for a real-time image processing. Experiments were conducted by using various dot matrix LED displays. The results show that the proposed method is successful for the number recognition on dot matrix LED display.

The three polyols, poly(trimethylene ether) glycol 2000, poly(tetramethylene ether) glycol 2000 and poly (tetramethylene ether) glycol 1000 were reacted with 4,4-diphenylmethane diisocyanate to get polyurethanes. The synthesized three polyurethanes were measured by FT-IR, NMR for investigating chemical structures. Through two spectroscophical methods, It is found that urethane group exists in the three polymers. From the evaluation of hardness, glass transition temperature, tensile strength, and water resistance, the results showed increasing order of Poly(tetramethylene ether) glycol 1000 > Poly(trimethylene ether) glycol 2000 > Poly(tetramethylene ether) glycol 2000 with the content of hard segment in polyurethane.

In this paper, a CMOS bandgap voltage reference that is not sensitive to changes in the external environment is presented. Large OLED display panels need high supply voltage. MOSFET devices with high voltage are sensitive to the output voltage due to the channel length modulation effect. The self-cascode circuit was applied to the bandgap reference circuit. Simulation results show that the maximum output voltage change of the basic circuit is 77mV when the supply voltage is changed from 10.5V to 13.5V, but the proposed circuit change is improved to 0.0422mV. The improved circuit has a low temperature coefficient of $9.1ppm/^{\circ}C$ when changing the temperature from $-40^{\circ}C$ to $140^{\circ}C$. Therefore, the proposed circuit can be used as a reference voltage source for circuits that require a high supply voltage.

Recently, Thin-film transistors (TFTs) are fundamental building blocks for state-of-the-art microelectronics, such as flat-panel displays and system-on-glass. Zinc oxide thin films have the advantage that they can grow at low temperature and can obtain high charge movility. Also the zinc oxide thin film can be used to control the resistance according to the oxygen content, so it is very easy to obtain the desired physical properties. In this paper, we fabricated a zinc oxide thin film on a polished copper substrate through a solution process, then improved the crystallinity through a geat treatment porcess, and studied to transfer it on a flexible substrate after the heat treatment was completed.

The objective of this research study is to investigate the optimal process parameters of electrical discharge machining (EDM) on SCM440 steel with copper as a tool electrode. The effect of various process parameters on machining performance is investigated in this study. Modern ED machinery is capable of machining geometrically complex or hard material components, that are precise and difficult-to-machine such as heat treated tool steels, composites, super alloys, ceramics, etc. This paper reports the results of an experimental investigation by Taguchi method carried out to study the effects of machining parameters on material surface roughness in electric discharge machining of SCM440 steel. To predict the optimal condition, the experiments are conducted by using Taguchi's L27 orthogonal array. The work material was ED machined with copper electrodes by varying the pulsed current, pulse on-time, voltage, servo speed and spark speed. Investigations indicate that the surface roughness is strongly depend on pulsed current.

Object detection and tracking is an exciting and interesting research area in the field of computer vision, and its technologies have been widely used in various application systems such as surveillance, military, and augmented reality. This paper proposes and implements a novel and more robust object recognition and tracking system to localize and track multiple objects from input images, which estimates target state using the likelihoods obtained from multiple CNNs. As the experimental result, the proposed algorithm is effective to handle multi-modal target appearances and other exceptions.

In this study, we prepared OLED cell with ITO (Indium Tin Oxide) films grown on the glass substrate by facing targets sputtering. Before fabrication of OLED cells, we investigated properties of ITO films deposited at various sputtering conditions. To investigate properties of as-prepared films, we employed four-point probe, UV-VIS spectrometer, X-ray diffractometer (XRD), field emission scanning electron microscopy (FE-SEM), hall-effect measurement. As a results, as-prepared ITO films have high transmittance of over 85 % in the visible range (300-800 nm) and a resistivity of under $10^{-4}$ (${\Omega}-cm$). Their resistivity increased as a function of oxygen gas flow and substrate temperature. OLED cell with ITO films were fabricated by thermal evpoeartor. Properties of OLEDs cell referring to properties of ITO films.

In recent years, with the development of automobile technology, smart system technology that assists safe driving has been developed. A camera is installed on the front and rear of the vehicle as well as on the left and right sides to detect and warn of collision risks and hazards. Beyond the technology of simple black-box recording via cameras, we are developing intelligent systems that combine various computer vision technologies. However, most related studies have been developed to optimize performance in laboratory-like environments that do not take environmental factors such as weather into account. In this paper, we propose a method to detect object by restoring visibility in image with degraded image due to weather factors such as fog. First, the image quality degradation such as fog is detected in a single image, and the image quality is improved by restoring using an intermediate value filter. Then, we used an adaptive feature extraction method that removes unnecessary elements such as noise from the improved image and uses it to recognize objects with only the necessary features. In the proposed method, it is shown that more feature points are extracted than the feature points of the region of interest in the improved image.