Journal of the Semiconductor & Display Technology (반도체디스플레이기술학회지)

The Korean Society Of Semiconductor & Display Technology (한국반도체디스플레이기술학회)
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Relation Between Flat-band Voltage and Quantum Efficiency of InSb MWIR Detector

InSb 중적외선 검출기의 Flat-band 전압과 양자효율의 상관관계

  • Received : 2018.05.09
  • Accepted : 2018.06.20
  • Published : 2018.06.30
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Abstract

InSb (III-V compound semiconductor) is used for photodiode to detect the mid-wavelength infrared radiation. Generally the quantum efficiency of InSb IR FPAs(Focal Plane Arrays) is known to be determined by thickness of InSb and transmittance of anti-reflection coating layer. In this study, we confirmed that the C-V characteristics of detector array affects the quantum efficiency of the InSb IR FPAs. We fabricated the IR FPAs with various $V_{fb}$(flat band voltage) values and confirmed the tendency between the $V_{fb}$ value and quantum efficiency of the IR FPAs.

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References

  1. Mike Davis, Mark Greiner, "Indium antimonide large-format detector arrays", Optical Engineering 50(6), 061016 (June 2011). https://doi.org/10.1117/1.3590722
  2. Fishman T., Nahum V, "3D simulation of detector parameters for backside illuminated InSb 2-D arrays", Proc. SPIE. 6660, 666005-1 - 666005-10 (2007).
  3. G. C. Holst, "Common sense approach to thermal imaging", SPIE Optical Engineering Press, 2000.
  4. Ilan Bloom, Yael Nemirovsky, "Surface passivation of Backside illuminated indium antimonide focal plane arrays", IEEE Trans. Electron Dev. 40 (2) (1993).
  5. Dieter K. Schroder, "Semiconductor material and device characterization", Wiley, New York.
  6. Taeseop Lee , Sang-Mo Koo ,"Electrical characteristics of 4H-SiC MIS Capacitors With Ni/CNT/SiO2 Structure", Journal of IKEEE 18(4), 2014.12, 620-624. https://doi.org/10.7471/ikeee.2014.18.4.620
  7. Jung Hyun Park, Jun Kyo Jeong, Yu Jeong Kim, Jung Byung Jun, Ga Won Lee, "Electrical Characteristic Analysis of IGZO TFT with Poly (4-vinylphenol) Gate Insulator according to Annealing Temperature", Journal of the Semiconductor & Display Technology, Vol. 16, No. 1. March 2017.
  8. K. Yasutake, Z. Chen, S. K. Pang, and A. Rohatgi, "Modeling and characterization of interface state parameters and surface recombination velocity at plasma enhanced chemical vapor deposited SiO2-Si interface", Journal of Applied Physics 75, 2048 (1994). https://doi.org/10.1063/1.356307