First-principles calculations based on spin density functional theory are performed to study the spin-resolved electronic properties of AlN doped with a Cu concentration of 6.25%-18.75%. The ferromagnetic state is more energetically favorable state than the antiferromagnetic state or the nonmagnetic state. For $Al_{0.9375}Cu_{0.0625}N$, a global magnetic moment of 1.26 mB per supercell, with a localized magnetic moment of 0.75 $m_B$ per Cu atom is found. The magnetic moment is reduced due to an increase in the number of Cu atoms occupying adjacent cation lattice position. For $Al_{0.8125}Cu_{0.1875}N$, the magnetism of the supercell disappears by the interaction of the neighboring Cu atoms. The nonmagnetic to ferromagnetic phase transition is found to occur at this Cu concentration. The range of concentrations that are spin-polarized should be restricted within very narrow.

Recently, the important issues of solar cell are low cost and high efficiency. Making low cost and high efficiency solar cell, there are many effects to development of inexpensive wafer, simplify process and improve optical, electrical properties. In this the study, the 2 step texturing method using micro blaster was developed to decrease reflection of incident lights. Air bridge electrode structure is suggested to expand the effective surface area and decrease the series resistance of finger electrode. The effects of 1 step texturing and 2 step texturing by micro blaster are compared. Reflectance of 1 step and 2 step texturing are measured 28.7% and 25.5%, respectively. The reflectance of 2 step texturing sample is lower about 3.2% than 1 step textured sample.

The performance of an OLED fabrication system strongly depends on the design of the evaporation cell-source. Therefore, necessity of the preceding study for cell source development of new concept is becoming increase. A development plan to substitute for experiment is applied as use simulation. In this study interpret behavior of a particle through DSMC techniques, and in this paper presenting a form to make so as to have better performance of the pointtype cell source which had a nozzle.

As the compact and easily accessible handheld devices, such as cellular phones and MP3 players equipped with image acquisition functionality, are becoming widely available among common users, various applications of images are rapidly increasing. Image related services and software such as web-based image presentation and image manipulation for personal or commercial purpose enable users to view contents of remote image archive and to manipulate enormous amount of images in local or network based storage as well. It is necessary for users to identify the images efficiently so that the same images are perceived as one physical entity instead of recognizing them as different images as the trends are getting stronger. In order to support this environment, we propose a method that generates image identifiers or indexing for images within a solid and efficient manner. The proposed image identifier utilizes multiple index values. The integration of component index values creates a unique composite value that can be used as a file name, file system identifier, or database index. Our experimental results on generation of constituent index values have shown favorable results.

We prepared Al doped ZnO thin film as a top electrode on a glass substrate with a deposited $Alq_3$ for the top emission organic Light emitting device (TEOLED) with facing target sputtering (FTS) method and radio-frequency (RF) sputtering method, respectively. Before the deposition of AZO thin film, we evaporated the $Alq_3$ on glass substrate by thermal evaporation. And we evaluated the damage of organic layer. As a result, PL intensity of $Alq_3$ on grown by FTS method showed higher than that of grown by RF sputtering method, so we found that the FTS showed the lower damage sputtering than RF sputtering. Therefore, we can expect the FTS method is promising the low-damage sputtering system that can be used as a direct sputtering on the organic layer.

Nanoimprint lithography (NIL) is an emerging technology enabling cost effective and high throughput nanofabrication. To successfully imprint a nanometer scale patterns, the understanding of the mechanism in nanoimprint forming is essential. In this paper, a numerical analysis of polymer flow in thermal NIL was performed. First, a finite element model of the periodic mold structure with prescribed boundary conditions was established. Then, the volume of fluid (VOF) and grid deformation method were utilized to calculate the free surfaces of the polymer flow based on an Eulerian grid system. From the simulation, the velocity fields and the imprinting pressure for constant imprinting velocity in thermal NIL were obtained. The velocity field is significant because it can directly describe the mode of the polymer deformation, which is the key role to determine the mechanism of nanoimprint forming. Effects of different mold shapes and various thicknesses of polymer resist were also investigated.

Interfacial stress singularity induced in an analysis model consisting of the polymeric thin film and the elastic substrate has been investigated using the boundary element method. The interfacial singular stresses between the viscoelastic thin film and the elastic substrate subjected to a uniform moisture ingression are investigated for the case of a small interfacial edge crack. It is assumed that moisture effects are assumed to be analogous to thermal effects. Then, the overall stress intensity factor for the case of a small interfacial edge crack is computed. The numerical procedure does not permit calculation of the limiting case for which the edge crack length vanishes.

The ZnO thin films doped with Ga(GZO) and both Ga and Ge(GZO:Ge) were deposited on glass substrate by using RF sputtering system respectively. Structural, morphological and optical properties of the films deposited in the same condition were investigated. Structural properties of the films were investigated by Field Emission Scanning Electron Microscopy, FE-SEM images and X-ray diffraction, XRD analysis. These studies showed shape of films' surface and direction of film growth respectively. It's showed that all films were deposited by vertical orientation strongly. It can be confirmed that all dopants of targets were included in deposited films by results of EDX analysis. UV-Vis spectrometer results showed that all samples had highly transparent characteristics in visible region and have similar 3.28~3.31 eV band gap. It was found that existence of all dopants by EDX analysis. Morphology and roughness of surface of each film were clearly shown by Atomic Force Microscopy, AFM images. It was found in this research that film doped with Ge more dense and stable with hardly any difference in gap energy compared to ZnO films.

This paper presents a wafer pre-alignment system which is improved using the image of the entire wafer area. In the previous method, image acquisition for wafer takes about 80% of total pre-alignment time. The proposed system uses only one image of entire wafer area via a high-resolution CMOS camera, and so image acquisition accounts for nearly 1% of total process time. The larger FOV(field of view) to use the image of the entire wafer area worsen camera lens distortion. A camera calibration using high order polynomials is used for accurate lens distortion correction. And template matching is used to find a correct notch's position. The performance of the proposed system was demonstrated by experiments of wafer center alignment and notch alignment.

In this study, we have investigated the effect of the ambient gases on the characteristics of IZO thin films for the OLED (organic light emitting diodes) devices. For this purpose, IZO thin films were deposited by RF magnetron sputtering under various ambient gases (Ar, $Ar+O_2$ and $Ar+H_2$) at $150^{\circ}C$. In order to investigate the influences of the oxygen and hydrogen, the flow rate of oxygen and hydrogen in argon mixing gas has been changed from 0.1sccm to 0.5sccm, respectively. All the samples show amorphous structure regardless of ambient gases. The electrical resistivity of IZO film increased with increasing flow rate of $O_2$ under $Ar+O_2$ while under $Ar+H_2$ atmosphere the electrical resistivity showed minimum value near 0.5sccm of $H_2$. All the films showed the average transmittance over 85% in the visible range. The OLED device was fabricated with different IZO substrates made by configuration of IZO/${\alpha}$-NPD/DPVB/$Alq_3$/LiF/Al to elucidate the performance of IZO substrate. OLED devices with the amorphous-IZO (a-IZO) anode film show better current densityvoltage-luminance characteristics than that of OLED devices with the commercial crystalline-ITO (c-ITO) anode film. It can be explained that very flat surface roughness and high work function of a-IZO anode film lead to more efficient hole injection by reduction of interface barrier height between anode and organic layers. This suggests that a-IZO film is a promising anode materials substituting conventional c-ITO anode in OLED devices.

This paper proposes computer visual inspection algorithms for various LCD defects which are found in a manufacturing process. Modular vision processing steps are required in order to detect different types of LCD defects. Those key modules include RGB filtering for pixel defects, gray-scale morphological processing and Hough transform for line defects, and adaptive threshold for spot defects. The proposed algorithms can give users detailed information on the type of defects in the LCD panel, the size of defect, and its location. The machine vision inspection system is implemented using C language in an embedded Linux system for a high-speed real-time image processing. Experiment results show that the proposed algorithms are quite successful.

The stereoscopic vision system is the algorithm to obtain the depth of target object of stereo vision image. This paper presents an efficient disparity matching method using nagao filter, octree color quantization and dynamic programming algorithm. we describe methods for performing color quantization on full color RGB images, using an octree data structure. This method has the advantage of saving a lot of data. We propose a preprocessing stereo matching method based on Nagao-filter algorithm using color information. using the nagao filter, we could obtain effective depth map and using the octree color quantization, we could reduce the time of computation.

In this study the optical properties, such as relative transmittance and reflectance of PDP were analyzed with 3D optical code. Because of the electrode structure, the reference model shows 21.3 % higher transmittance than the test model and the reference model shows 16.6 % higher reflectance than the test model. The calculated reflectance of reference and test models is compared to the measured reflectance and the difference between calculation and measurement is 4.9 %.

In this study we investigated the electrical properties of ZnO-based MOS capacitor with $HfO_2$ as the gate dielectric. MIM capacitor, which uses either $HfO_2$ or $Al_2O_3$ as the dielectric layer, is also studied to understand the dependency of the dielectrics on the preparation conditions. It was found that thinner $HfO_2$ films yield better electrical properties, namely lower leakage current and higher breakdown electric field. These properties were observed to deteriorate when subsequently annealed. Capacitance in the depletion region of MOS capacitor was found to increase with UV ozone treatment time up to 60min. However, when the treatment time was extended to 120min, the trend is reversed. The 'threshold voltage' was also observed to positively shift with UV ozone treatment time up to 60min. The shift apparently saturated for longer treatment.