Journal of the Semiconductor & Display Technology (반도체디스플레이기술학회지)

The Korean Society Of Semiconductor & Display Technology (한국반도체디스플레이기술학회)
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Magnetic Properties of Cu-doped AlN Semiconductor

AlN 반도체와 Cu의 도핑 농도에 대한 자성

  • Kang, Byung-Sub (BK 21 Program and Department of Physics, Chungbuk National University) ;
  • Lee, Haeng-Ki (Department of Radiotechnology, Daegu Polytechnic College)
  • 강병섭 (충북대학교 자연과학대학 물리학과) ;
  • 이행기 (대구산업정보대학 방사선과)
  • Received : 2010.05.28
  • Accepted : 2010.07.31
  • Published : 2010.09.30
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Abstract

First-principles calculations based on spin density functional theory are performed to study the spin-resolved electronic properties of AlN doped with a Cu concentration of 6.25%-18.75%. The ferromagnetic state is more energetically favorable state than the antiferromagnetic state or the nonmagnetic state. For $Al_{0.9375}Cu_{0.0625}N$, a global magnetic moment of 1.26 mB per supercell, with a localized magnetic moment of 0.75 $m_B$ per Cu atom is found. The magnetic moment is reduced due to an increase in the number of Cu atoms occupying adjacent cation lattice position. For $Al_{0.8125}Cu_{0.1875}N$, the magnetism of the supercell disappears by the interaction of the neighboring Cu atoms. The nonmagnetic to ferromagnetic phase transition is found to occur at this Cu concentration. The range of concentrations that are spin-polarized should be restricted within very narrow.

Keywords

References

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