Development of Transfer Method for Transparent Thin Film Transistor of Heat-treated Zinc Oxide Thin Film by Solution Process

용액공정을 이용한 열처리된 산화아연 박막의 투명한 박막 트랜지스터 구현을 위한 전사방법 개발

  • Kwon, Soon Yeol (yungpook National University, School of Electronics Engineering) ;
  • Jung, Dong Geon (yungpook National University, School of Electronics Engineering) ;
  • Choi, Young Chan (yungpook National University, School of Electronics Engineering) ;
  • Lee, Jae Yong (yungpook National University, School of Electronics Engineering) ;
  • Kong, Seong Ho (yungpook National University, School of Electronics Engineering)
  • 권순열 (경북대학교 IT대학 전자공학부) ;
  • 정동건 (경북대학교 IT대학 전자공학부) ;
  • 최영찬 (경북대학교 IT대학 전자공학부) ;
  • 이재용 (경북대학교 IT대학 전자공학부) ;
  • 공성호 (경북대학교 IT대학 전자공학부)
  • Received : 2018.06.15
  • Accepted : 2018.06.21
  • Published : 2018.06.30

Abstract

Recently, Thin-film transistors (TFTs) are fundamental building blocks for state-of-the-art microelectronics, such as flat-panel displays and system-on-glass. Zinc oxide thin films have the advantage that they can grow at low temperature and can obtain high charge movility. Also the zinc oxide thin film can be used to control the resistance according to the oxygen content, so it is very easy to obtain the desired physical properties. In this paper, we fabricated a zinc oxide thin film on a polished copper substrate through a solution process, then improved the crystallinity through a geat treatment porcess, and studied to transfer it on a flexible substrate after the heat treatment was completed.

Keywords

References

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