In this thesis, the trellis detection scheme is proposed to improve the error performance of the noncoherent detection in the TFM system. Trellis detection takes advantage of the trellis property of TFM-encoded signals. The trellis property is created by giving correlations among adjacent TFM-encoded signals at the transmitter. The performance of the trellis detection scheme is analyzed by means of the Bernoulli trials with the average symbol error probability, and is compared to that of the bit-by-bit detection scheme. As a result,when the SNR is below 20 dB in the Rayleigh fading and AWGN channel, the trellis detection is inferior to the bit-by-bit detections. But when SNR is above 20 dB, the trellis detection is superior to the bit-by-bit detection, and its performance enhancement is better as the SNR increases.

In this paper, a simulation model for scope and filter parameters in CMIS/CMIP, OSI management protocol, has been discussed and the suitable scope type was represented by analyzing optimal polling time in network management system, queue size and response time. Scope and filter parameters in MGet, M-Set, M-Action, and =M-Delete services provide a scheme to select some managed objects, and the results are largely varied according to a scope type requested and the outcome of filtering. It has been simulated each scope type and all scope type mixed in a network by varying the offered load and a polling time. On the same time, the response time, queue size of the managing system and a delay time have been measured. As a results, the suitable scope type and polling time enhancing the network performance on the OSI network management is proposed.

In this paper, a new large scale ATM switch architecture for Broadband ISDN is presented and its performance is analyzed mathematically. The proposed two-stage ATM switch consists of a sorting network and several unit switches. The proposed switch is self-routing and nonlocking. Its maximum through put is 100% without speed up which other output buffered switch needs. The hardware complexity mainly depends on that of a sorting network, but sorting network is easy to be implemented to VLSI because of its regularity in the structure.

In this paper, numerical analysis package using Time-Domain Finite Difference (TDFD) method is developed to solve the initial value problem of Maxwell's equation and applied to several microstrip structures. TDFD allows us to show graphically the evolution of the crosswalk between microstrip lines. Moreover, we can obtain transmission line parameters and scattering parameters through Fourier transform of TDFD results in easy and efficient ways. TDFD is successfully applied to :1) wide band electromagnetic wave propagation along the single microstrip line, 2) crosswalk analysis between two microstrip lines, and 3) three metal line side-coupled filter. Our results show much better agreement with other theoretical experimental results reported in the literature. Thus we expect that TDFD is very useful to designing MMIC(Monolithic Microwave Integrated Circuit).

This paper showed that theoretical site attenuation curves were obtained simply by the method of moments analysis for current integral equations on antennas. Since the expansion coefficients of driving and receiving points were calculated from the method of moments procedure, site attenuations were evaluated simply using these basic antenna parameters. Theoretical site attenuations were calculated with half-wave resonant dipoles connected directly to a 50 ohm receiving system and connected to a 72/50 ohm matching network, respectively. Results were compared with other theoretical studies reported so far. Also included were experimental results for site attenuations to prove the validity of theoretical analysis.

In this paper, fSDF/POF, BPOF spatial matched filters are designed and implemented by CGH. The correlation characteristics for the suggested filters are analyzed for the distorted input images. Input patterns are obtained from the out-of-plane aircraft images by gradually rotating it, and then used for SDF training images. Modified version of LCD is used for a real-time input device of an optical correlator, and CGH-based fSDF filters are fabricated on film mask for spatial matched filter in order to recognize the distorted images. Total optical corrlator system size is effectively reduced to 148.8 cm by using lens combinations. Computer simulations and experimental results show that the suggested phase filters have nearly uniform correlation characteristics and have good classification capabilities between two classes.

A measurement technique of the surface generation velocity S$_o$ using the BC(buried channel) MOS structure with shallow and low doped channel layer (BC MOS S$_o$ measurement technique) is presented and verified analytically and experimentally. Using this measurement technique, S$_o$ can be measured more accurately than that measured using the gate-controlled diode SS1oT measurement technique. When S$_o$ is measured for the two techniques from a BC MOS structure test patten with gate length of 171$\mu$m, the results are 0,66cm/sec and 0.28cm/sec for the former and the latter respectively.

VLSI 전송선로의 커패시턴스를 3차원으로 계산하였다. Green's function과 표면전하밀도의 곱의 형태로 주어지는 적분식을 풀어서 커패시턴스를 구하였다. 이때, 표면전하밀도는 도체의 표면을 균일한 면적을 갖는 미소 면적소로 나누어 주었을 때 각각의 면적소 내에서는 일정한 상수값을 갖는다고 가정하였다. 지금까지의 Green's function을 이용한 적분방법에서는 적분식의 계산을 Fourier 적분의 형태로 변환하여 계산하였기 때문에 계산과정에서 어느정도의 오차가 있을 수 밖에 없었지만, 본 논문에서는 Fourier 적분을 사용하는 대신에 이중 적분을 직접적으로 적분할 수 있는 방법을 제시하였다. 이 방법을 사용하여 적용한 결과를 기존의 결과들과 비교를 함으로써, 이의 정확성을 입증하였다.

We have investigated the thermal reaction property and the oxygen behavior of TiN/Ti/Si structure after different hear treatments using x-ray photoelectron spectroscopy and cross-sectional transmission electron microscopy measurements. During the heat treatment in N$_2$ amibient, the considerable amount of oxygen atoms incorporates into TiN/Ti/Si Structures. It is found that oxygen atoms pile up at the top surface of TiN and TiN/Ti interface, forming a compound of TiO$_2$ above $600^{\circ}C$. Inside the TiN film, the oxygen content increases as the annealing temperature increases, mostly TiO and Ti$_2$O$_3$ rather than thermodynamically stable TiO$_2$. Above the annealing temperature of 55$0^{\circ}C$, the TiSi$_2$ formation has initiated. One thing to note is that a severe blistering is observed in the sample annealed at $600^{\circ}C$, due to (1) the difference of thermal expansion coefficient between TiN and Si` (2) the compressive stress induced by the volume reduction caused by the Ti-Silicide grain while elevating temperatures.

This paper presents one of the first comprehensive studies of how hot electron degradation impacts the input offset voltage of a CMOS differential amplifiers. This study utilizes the concept of a virtual source-coupled MOSFET pair in order to evaluate offset voltaged egradation directly from individual device measurement. Next, analytical models are developed to describe the offset voltage degradation. These models are used to examine how hot electron induced offset voltage is affected with the device parameters.