In this DQDB networks, erasure nodes may be allocated on the bus and release slots which already had been read by destination nodes. An important function of the erasure node must be to eliminate as many requests as erased slots used by downstream nodes. In the networks with priorities, following two additional issues must be solved : (1) accurately to guess for which priority the erased slots is to be used, and (2) to find in a short period a request of that priority to cancel. In this paper, we propose two erasure node algorithms based on elimination of the requests. In these algorithms, the requests are eliminated excessively at low load but optimum elimination can be achieved at full load. Simulation results show that these two algorithms have similar access delay to that of existing algorithms at low load and better performance at high load.

A gradient matrix method in conjunction with the transmission-reflection method to determine the complex permittivity and permeability of a microwave material is presented. This method does not incur the phase ambiguity due to an improper sample length, and is applicable to the measurement of low-loss materials of a half wavelength. A gradient matrix for a coaxial cable sample is derived, and the results are illustrated.

In this paper, a high frequency method is developed which combines the uniform Geometrical Theory of Diffraction(GTD) and the Aperture Integration(AI) to analyze electromagnetic plane wave scattering by a perfectly-conducting, open-ended, semi-infinite parallel plate waveguide with a uniform layer of absorbing material on its inner wall, and with a slanted planar termination inside. In this method, first, the field of an arbitary point inside the paraller plate waveguide is computed by the GTD. Second, the field scattered into exterior region by the waveguide is found using the equivalent current, which can be obtaind from the aperture field of the waveguide and using the AI. Numerical results based on this GTD method are presented and compared with those based on the mode matching method.

Due to the data processing development by the computer, the early warning system recently has made a remarkable evolution in its functions and performance as a component of the communication and control system which is also supported by the computer communication and intelligence system. In this paper it is presented that a integrated data processing system is designed to integrate the information sent from the various radar systems which constitute an early warning system. The suggested system model of this paper is devided into two types of structures, the centralized model and the distributed model, according to the data processing algorithm. We apply the queueing theory to analyse the performance of the designed models and the OPNET system kernel to make the analysing program with C language. From the analysis of the queueing components by applying the analysis programs to the designed systems, we got the tendancies and characteristics of both models, that is, a fast data processing performance of the distributed model and a stable data processing capability of the centralized model.

The wave-kinetic numerical method is used in simulating the irradiance scintillations of optical wave through a two-dimensional random medium containing weak Gaussian fluctuations of the refractive index. The results are compared to existing analytical or numerical results. The wave-kinetic method is a phase-space ray-tracing method for certain key ray trajectories, and the irradiance is calculated by reconstructing the entire beam from these trajectories. The strength of the wave-kinetic method lies in the fact that it can be applied to any type of random media.

In this paper a band-pass filter using dielectric resonators with tuning screw and spacer at Ku-band is designed and constructed. For the filter design and construction, the coupling coefficient K between two resonators is numberically evaluated. The external quality factor Q$_{ex}$ is also calculated with a microstrip line which is necessary for the field excitation of dielectric resonator. The coupling between dielectric resonator and microstrip line depends mainly upon the magnetic field and is principal parameter in band-pass filter. The Q$_{ex}$ and K data which are evaluated by numberical analysis are practically applied to the filter construction. The theoretical Band-pass filter responses are given by Chebyshev approximation and they are nearly similar to the experimental results.

In this paper, the shielding characteristics of a cylindrical multilayered dielectric are analyzed. In order to evaluate shielding effects, we consider the case that plane waves are incident upon an infinitely long cylindrical multilayered dielectric which surrounds a conductor core. For perfect and lossy dielectric distributions, total induced currents at the conductor surface are computed. It was found from those results that electromagnetic characteristics of the multilayered dielectric are largely dependent on dielectric distribution.

In this paper, a measurement system of surface flatness test using 2-Bucket algorithm phase-shifting interferometry is designed and constructed. In the conventional surface flatness test system using phase shifting interferometry, it is needed more than 3 fringe datas but we propose 2-Bucket algorithm phase-shifting interferometry which only uses two fringe datas. 2-Bucket algorithm uses the relative phase differences of the neighbour pixels. If we watch the result of phase-shift error test simulation, 2-Bucket algorithm has the same calculating values that 3-Bucket, 4-Bucket and 5-Bucket algorithm have them. Experiments have been carried out on the silicon wafer. The measurement of silicon wafer's surface flatness shows that the flatness topography using 2-Bucket algorithm is similar to that of other algorithms.

Generally, the conventional tracking algorithms are very limited in the practical applications because of that the computation load is exponentially increased as the number of targets being tracked is increase. Recently, to overcome this kind of limitation, some new tracking methods based on neural network algorithms which have learning and parallel processing capabilities are introduced. By application of neural networks to multi-target tracking problems, the tracking system can be made computationally independent of the number of objects being tracked, through their characteristics of massive parallelism and dense interconnectivity. In this paper, a new neural network tracking algorithm, which has capability of adaptive target tracking with little increase of the amount of calculation under the clutter and noisy environments, is suggested and the possibility of real-time multi-target tracking system based on neural networks is also demonstrated through some good computer simulation results.

The current-voltage characteristics at SrO${\cdot}6Fe_{2}O_{3}$ electronic ceramics interfaces have been studied using cyclic voltammetric methods. The symmetrical and stable cyclic voltammograms, which indicate the same anodic and cathodic process, are obtained on the whole experiments. The approximate saturation current is 50$\mu$A but the value depends on the experimental processes of the electrode specimens. The current-voltage characteristics of SrO${\cdot}6Fe_{2}O_{3}$ electronic ceramics in dilute aqueous electrolytes or double deionized water are determined by the water adsorption process and the interconnected porosity effect. On the other hand, the current-voltage characteristics in relatively concentrate aqueous electrolytes are determined by the ionic adsorption process and the related electrical double layers. The SrO${\cdot}6Fe_{2}O_{3}$ electronic ceramics can be directly used as an electrochemically stabled resistor, electrode or a humidity sensor.

The dependence of electrical characteristics of RuO$_2$-based thick film resistors on the RuO$_2$ contents, glass composition variation and the firing temperatures was measured. The sheet resistance of resistors decreased as the contents of RuO$_2$ increased and at firing temperatures higher than C, the sheet resistance increased as the firing temperature increased. In case of using lead borosilicate glass-containing $Bi_{2}O_{3}$, the sheet resistance decreased as the contents of $Bi_{2}O_{3}$ increased. TCR changes from negative to positive values as RuO$_2$ contents increased and from positive to negative values as the firing temperature increased. TCR increased to positive values as $Bi_{2}O_{3}$ increased in the glass.

The technology of LOCOS(LOCal Oxidation of Silicon) was used to form the island of SOI film. After this, the SOI film was recrystallized by CO$_2$ laser and metal gate nMOSFETs were fabricated on this SOI film and their electrical characteristics were measured. The kink effect was not nearly observed and edge channel effect was found in the SOI nMOSFETs. The threshold voltage was about 0.5V, the electron mobility was about 340cm$^2$V$\cdot$S and an ON/OFF ratio above 10$^{5}$ was obtained at V_{DS}$=4V. The electrical characteristics were improved by laser recrystallization.

In integrated circuits, protection circuits are required to protect the internal nodes from the harmful ESD(Electrostatic discharge). This paper discusses the characteristics of the circuit components in ESD protection circuitry in order to analyze the ESD phenomina, and the design methodalogy of ESD protection circuits, using test pattern with a variation of the number of diode and transistor. The test devices are fabricated using a 0.8$\mu$m CMOS process. SPICE simulation was also carried out to relate output node voltage and measured ESD voltage. With increasing number of diodes and transistors in protection circuit, the ESD voltage also increases. The ESD voltage of the bi-directional circuit for both input and output was 100-300[V], which in higher than that of only output(uni-directional) circuit. In addition, the ESD protection circuit with the diode under the pad region was useful for the reduction of chip size and parasitic resistance. In this case, ESD voltage was improved to a value about 400[V].

In this paper, we analyze the structure characteristics of $As_{40}Se_{50-x}S_{x}Ge_{10}$ system bulk and thin films. As the results of XRD patterns, it identified amorphous state. In order to find the glass transition temperature($T_g$), crystallization($T_c$) and melting point ($T_m$)of bulk sample, it ascertained that TS1gT is 238$^{\circ}C$ in $As_{40}Se_{15}S_{35}Ge_{10}$, and 231$^{\circ}C$ in $As_{40}Se_{25}S_{25}Ge_{10}$ & $As_{40}Se_{50}Ge_{10}$ following the thernal analysis by DSC, DTA, & TGA method. Also it was confirmed the phase seperation of continuous phase and dispertion phase by the optical texture of polarizing microscope and $T_g$ near 20$0^{\circ}C$ in thin film. Therefore, it was found that it occurs the phase seperation of Ge-rich dontinuous phase and Se-rich dispersion phase following the EDS analysis of thin film and the surface SEM photograph.