This paper reports a dispersion compensation technique to implement tje distortionless transmission line by satisfying the heaviside conditon. Because of the skin depth for aconductor, compensation condition is dependent on the freuqncy variation. For this reason, first, the resistance have been chaacterized in awide range of frequencies, and then found the effective conductivity of the substrate which satisfied the heaviside condition. The phase velocity and the characteristics impedance are prresented nearly constant over a wideband frequency range.

A new process is developed to improve the electrical characteristics of high .beta. and low saturation voltage power transistor for lamp solenoid driver application. To prevent punch-through breakdown, appropriate combination of base doping and base width is necessary in the range of operating voltage of the circuit. The optimum values of base doping and sheet resistance are $Q_{D}$= $1.5{\times}10^{14}$atoms/$\textrm{cm}^2$ and $R_{s}$= 350 $\Omega/\square$ base wodtj $W_{B}$= $2.5{\mu}m$respectively. Under this condition it is possible to control $\beta$ of the transistor to 1500, maintaining $VB_{CBO}$ =200V. To reduce scattered distribution of .beta. of the devices on the wafer, it is necessary to improve emittter predeposition process. As a result, scattered distribution of .beta. of the devices on the wafer was reduced to 1/6 by using the new process. To improve collector to emitter forward voltage drop, $V_{ECF}$ of damper diode, an additional silicon etching process is used, which resulted in improving the value of $V_{eCF}$ from 2.8 V to 1.8V. With the suggested process superior device performance and higher yield are achieved.

Single crystalline I $n_{x}$G $a_{1-x}$ N thin film was grwon by MOCVD on (001) sapphire substrate for the blue light emitting devices. A good quality of I $n_{0.13}$G $a_{0.87}$N/GaN heterostructure grwon above 700.deg. C was confiremed by various characterization techniques of AFM, RHEED and DC-XRD. Through PL measurement at room temperautre for the Si-Zn co-doped I $n_{x}$G $a_{a-x}$N/GaN structure grwon at 800.deg. C to obtain blue wavelength emission, 460-470 nm and 425 nm emission peak were observed, which are believed to be from donor-to-acceptor pair transition and band edge emission of In/x/G $a_{1-x}$ N, respectively. The result of PL measurement of the undoped MQW I $n_{x}$G $a_{1-x}$ N layer at low temperature confirmed that the strong MQW peak was resulted by exciton from the GAN barrier and carrier of DA pair confined into the well layer.ll layer.yer.r.

A blue LED of $In_{x}Ga_{1-x}N$ multiple quantum well structure which had the blue emission spectrum of donor-acceptor pair transition generated form Si-Zn co-doped $In_{x}Ga_{1-x}N$ active layer, was fabricated. The $In_{x}Ga_{1-x}N$ MQW heterojunction LED structure was grown by MOCVD on the sapphire substrate with (0001) surface orientation at 800.deg. C. The fabricated LED exhibited forward cut-in voltage of 4~4.5V and reverse breakdown voltage of -13V. Its optical chracteristics showed that the center wavelength of peak emission occurred at 460nm and the optical intensity was increased linearly with respect to the injected electrical current above 5mA.

A new self-consistent hole mobility model that includes lattice and hole temeprature has been proposed. By including the lattice and hole temperatures as well as the effective transverse field and the interface fixed charge, the model predicted the saturation of hole drift velocity and showed the effects of coulomb scattering, surface phonon scattering, and surface roughness scattering. The calculated data by the model were compared with the reported experimental data and they were shown to agree quite well. The new model is expected to estimate the characteristics of very short channel devices in the in the hydrodynamic model simulation.

An analytical model for the surface field distribution of the RESURF (reduced surface field)LD(lateral double-diffused) MOS is presented in terms of the doping concentration, the thickness of the n epi layer, the p substrate concentration, and the epi layer length. The reuslts are used to determine the breakdown voltage due to the surface field as a function of the epi layer length. The maximum breakdown voltage of the device is found to be that of the vertical n$^{+}$n$^{[-10]}$ p$^{[-10]}$ junction. Analytical results of the breakdown voltage vs. the epi layer length agree well with the numerical simulation results using MEDICI.I.

The theoretical modeling of transition energy and absorption coefficient for intersubband transitions in quantum wells in presented. We include, as well as hartree and exchange-correlation potentials, boht depolarization effect and exciton-like effect which play great roles in heavily doped cases where practically reasonable absorption coefficients are available. Also, the calculated results are compared with the existing experimental values for .delta.-doped Si quantum wells to check the validity of our theoretical calculation.

Dynamic characteristics of widely tunable SGDBR/SSGDBR laser diodes integrated with an electroabsorption modulator is inestigated using an improved large-signal timef-domain model. First, wide tunning properties of a SGDBR laser diode and a SSGDBR laser diode are analyzed respectively and compared with each other. And, intensity-modulation characteristics of a SGDBR laser diode incorprating an electroabsorption modulator are investigated. It is shown that an external modulation has the lower frequency chirp by 1/20 for almost same extinction ratios than a direct modulation, and a nearly transform-limited pulse train can be generated using the optical gating of an electroabsorption modulator.

Optical broadband second harmonic genration (SHG) in thin film waveguide structure was investigated. The copolymer poly(MMA-co-DR1MA) which was consiste dof PMMA (polymethylmethacrylate) and DR 1 (disperse red 1) was spin coated on the pyrex substrate. The green and near UV SHG were observe dfrom the fundamental beam even though the poled polymer has the absorption in second harmonic wavelength range. It was able to genrate SHG by cerenkov type phase matching. Th epoled polymer film thickness was decided by theoretical analysis. The green (532nm) and near UV SHG (370nm) were observed from the Q-switched Nd-YAG laser (1064nm) and Ti-sapphire laser (740nm). It was in good agreement with the experimental results.

We demonstrate wavelength conversion of 2.5Gb/s optical signals by four-wave mixing (FWM) in a semiconductor optical amplifier (SOA). We investigate the effect of input pump and signal powers on the coversion efficiency, optical signal-to-noise ratio (OSNR) and extinction ratio to be a measure of performance in a wavelength converter. As a result, we show that the maximum bit error rate (BER) performance can be obtained by co promising among high-vonversion efficiency (minimum Pprobe), high-OSNR (maximum Pprobe) and low-cross-gain saturation effects (Pprobe kept at least 6dB weaker than Ppump). In our experiment, we obtain optimum performance at +3 dBm pump power and -6dBm signal power. The power penalty incurred in the wavelength conversion can be minimized by careful selection of the input pump and signal powers. We show that about 0.5dB power penalty for 3.2nm wavelength coversion at 10-10 BER is achievable.

This paper presents a new method to synthesize a digital hologram that meets the resolution of a currently manufactured LCD while capable of displaying a 3-D object. That is accomplished by segmenting a hologram, resulting in relaxed sampling constraint. We show that the segmentation of a hologram enables us to utilize the planewave approximation and, unlike in a holographic stereogram, it does not require projection process, but directly takes fourier transform of horizontally sliced 2-D images that constitute a 3-D object, which makes it possible to reconstruct a higher resolution image with depth information. We also show that proposed hologram contains data significantly smaller than the conventional hologram does, which is quite useful for constructing wide-viewing hologram. Finally, simulation results obtained by both methods are compared.

We propose and design a new type of anrrow band-pass optical filter based on two fiber gratings with different reflection wavelength. The ripples occur in the spectra of the filter with two uniform fiber gratings. Our simulation results also show that the ripples disappear with the fiber gratings apodized to both gaussian and hyperbolic tangent function. The hyperbolic tangent function seems to be a better apodization function for improving the filter's performance in terms of narrow pass bandwidth and high transmission.