십자형 및 변형 십자형의 2차원 터널 내에서 전파 전파 문제를 FVTD(finite volume time domain)법을 적용하여 시간영역에서 해석하였다. FVTD법은 임의의 미소 다면체 셀(cell)에 대하여 맥스웰 방정식(Maxwell's equation)을 체적 적분한 것에 이산화하여 나타낸 차분 방정식이다. 이 방식의 장점은 불균질 매질을 포함하는 임의 형태의 경계치 문제를 쉽게 계산할 수 있는데 있다. 본 논문에서는 FVTD법을 이용하여 십자형 터널에 대해 전자파의 전파 현상을 수치 계산을 하고, 유효성을 검증하기 위해 실험치와 비교하였다. 수치 계산의 종단에 있는 흡수 경계 조건은 손실 매질에 있느 PML(Perfect Matched Layer)흡수 경계 조건을 적용했다.

A wide band design method of an electromagnetic wave absorber with using exponentially tapered ferritic is proposed and discussed. A theoretical model using the equivalent material constants method is also proposed to analyze the regions varying sptially in the shape of ferrite. Based on the developed model, wide band electromagnetic wave absorbers with excellent reflectivity frequency charaateristics in the freqency rang eof 30MHz to 2,150MHz or 2,430MHz were designed.

A enw channel current model of GaAs MeSFET suitagle for applications to microwave CAD has been developed. The current model includes the bias-dependent frequency dispersion effects and its parameters are extracted from the pulsed I-V measurements at several quiescent bias points. The model is verified by applying to the nonlinear circuit designs of power amplifier and MMIC mixer.

In resonant tunneling diodes with the quantum well structure showing the negative differential resistance (NDR), it is essential to increase both the peak-to-valley current ratio (PVCR) and the peak current desnity ( $J_{p}$) for the accurate digital switching operation and the high output of the device. In this work, a resonant interband tunneling diode (RITD) with single quantum well structure, which is composed of I $n_{0.47}$As/I $n_{0.52}$A $l_{0.48}$As heterojunction on the InP substrate, is fabricated ot improve PVCR and JP, and then the dependence of I-V charcteristics on the width of the quantum well was investigated.d.ted.d.

The crystallization temperature of an amorphous silicon (a-Si) can be lowered down to 400.deg. C by a new method : Double-metal induced lateral crystallization (DMILC). The a-Si film was laterally crystallized from Ni and Pd deposited area, and its lateral crystallization rate reaches up to 0.2.mu.m/hour at that temperature and depends on the overlap length of Ni and Pd films; the shorter the overlap length, the faster the rate. Poly-Silicon thin film transistors (poly-Si TFT's) fabricated by DMILC at 400.deg. C show a field effect mobility of 38.5cm$^{3}$/Vs, a minimum leakage current of 1pA/.mu.m, and a slope of 1.4V/dec. The overlap length does not affect the characteristics of the poly-Si TFT's, but determines the lateral crystallization rate.

We fabricated gamma radiation detector using high resistive p-Cd$_{80}$Zn$_{20}$Te grown by high pressure bridgman method and forming au thin film electrode by chemically electroless deposition method. The device of Au/Cd$_{80}$Zn$_{20}$Te/Au is a typical MIM structure. The characteristic of current-voltage showed good linearity to 3kV/cm but it depend on the square of electric field over 3kV/cm. As the results of rutherford backscattering spectroscope(RBS) and auger spectroscope on the Au/Cd$_{80}$Zn$_{20}$Te, Au penetrated to the surface of Cd$_{80}$Zn$_{20}$Te detector absorbed slightly high energy radiation like a few hundred keV and showed good performance to detect low energy gamma ray.mma ray.

In this paper, a new holographic display system that can in real-time reconstruct the complex hologram without the bias and the conjugate image, which is obtained form the modified triangular interferometer, is presented. The proposed system is made of adding liquid crystal displays(LCDs), a $\lambda$/2 wave plate, and a polarizing beam splitter to the conventional mach-zehnder interferontric configuration. We demonstrate through theoretical analysis and experiment that real-time image reconstruction from the complex hologram is possible using the proposed system.

The optical power splitter/couplers based on MMI(multimode interference) in GaAs/AlGaAs are studied. We presetn a design of optical power splitter/couplers, which have deeply etched multimode waveguide. The properties and fabrication tolerance on the etching depth, multimode waveguide width are simulatedusing a FD-BPM (finite difference beam propgation method). Proposed 1*N optical of designed device is 0.7dB smaller than the optical power splitter with a shallowly etched MMI section. For 0.5dB excess loss, the predicted fabrication tolerance is 0.6.mu.m on the multimode waveguide width of the 14 optical power splitter with a deeply etched MMI section. Also excess loss and uniformity of poposed 32*32 optical power coupler are below 0.3dB. The excess loss of proposed 32*32 optical power coupler is 2dB smaller than the optical power coupler with a shallowly etched MMI section. It is shown that the optical power splitters/couplers with a deeply etched mMI section have low loss, good uniformity, and improved fabriction tolerance.

A polymeric waveguide TE-pass polarier operating at wavelengths around 1.55.mu.m is realized by utilizing the birefringence induced by photoleaching at room temperature. To implement the polarizer, the photobleached waveguide supporting only TE mode is integrated in the middle of the etched rib waveguide that supports TE and TM modes. It has a simple structure and requires no high temperature process like poling. The measured polarization extinction ratio is about 21dB and the estimted excess loss is about 0.4dB.

An electro-optic polymer digital optical switch with rib waveguides is designed and fabricated by using the RIE method. POlarization-independent and wavelength-insensitive operation is demonstrated at the wavelengths of 1.3mm and 1.55mm, for the first time in electro-optic polymer-based devices. The rib waveguides have been designed to achieve good guiding properites for both TE and TM polarizations by controlling the etching depth as well as its aspect ratio. Especially theetching depth is controlled to change the guided mode profiles of the rib waveguide and thus to achieve an optimum coupling in the branch. The measured crosstalk is better than -16dB and the extincton ratio of each output port is greater than 16dB.

An electro-optic polymer digital optical switch with a coupling region modified for optimum mode coupling is proposed, and it is analyzed by using the beam propagation method combined with the effective index method. Its modified coupling region is adiabatically introduced along the propagation direction from the branching point of the two waveguides. The structure of the modified coupling region and its refractive index profiles are designed to optimize the mode coupling in the Y-branch waveguide. Therefor, the switching performance of the device may be enhanced with a fixed device length. It is confirmed from the numerical calculation that the drive voltage is reduced by more than 30 percents and te crosstalk is improved by about 8dB.

A new method of stbilizing the sagnac interferometric fiber optic current sensor inteh presence of birefringences and phase is presented. This method is realized by dividing the output of the ac current signal with the modulation signal output. Using the technique the stability of the current sensor was improve dmore than 4.5 times at 800Arms for 2 hours. The current sensor also shows good linearity up to 100Arms.

3-dimensional finite element mehtod (FEM) elecrical field analysis was performed to obtain electric fields on a field emission display (FED) tip in an array form. Because, unlike a single tip structure, there is no azimuthal symmetry for a tip aary, 3D analysis is necessary. To reduce memory requriement the simulatio was performed by applying the neumann boundary condition to the intermediate plane between tips to take the effect of the array on the electric field into account and corresponding current was calculated. To verify our algorithm, comparison between simulation resutls and experimental data from another paper was made and the difference was discussed.

We demonstrate a novel wavelength -division add/drop multiplexer employing fiber bragg gratings and polarization beam splitters. the multiplexer is easy to fbricate without any special technique such as UV trimming, and yet shows very stable performance with less than 0.3-dB crosstalk power penalty in a 0.8-nm-spaced, 2.5Gbps-per-channel WDM transmission system. We find that the rejection of adjacent channels is more than -6dB, and the signal leakage through output port is less than -34dB.

In this paper, we have obtained information about the orientational distribution (polar and azimuthal) of the surface molecules on backward rubbed polyimide. Using the second-harmonic genration tecnique, the nonlinear susceptibility tensor components were induced. And, the orientational distribution function was estimated without a prior assumptions, using the maximum entropy method. The polar angle of surface molecules befor rubbing is isotropic. The polar angle of surface molecules after rubbing is anisotropic along the rubbing direction. The polar angle of surface molecules after several rubbing is determined by the last rubbing direction.