Journal of the Korean Institute of Telematics and Electronics D (전자공학회논문지D)

The Institute of Electronics and Information Engineers (대한전자공학회)
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Characteristics of a Blue Light Emitting Diode with In$_{x}$Ga$_{1-x}$N MQW Structure Grwon by MOCVD

MOCVD로 성장된 In$_{x}$Ga$_{1-x}$N MQW 구조의 청색 발광당이오드의 특성

  • 이숙헌 (경북대학교 전자전기공학부) ;
  • 배성범 (경북대학교 전자전기공학부) ;
  • 태흥식 (경북대학교 전자전기공학부) ;
  • 이승하 (경북대학교 전자전기공학부) ;
  • 함성호 (경북대학교 센서기술연구소) ;
  • 이용현 (경북대학교 전자전기공학부) ;
  • 이정희 (경북대학교 전자전기공학부)
  • Published : 1998.08.01
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Abstract

A blue LED of $In_{x}Ga_{1-x}N$ multiple quantum well structure which had the blue emission spectrum of donor-acceptor pair transition generated form Si-Zn co-doped $In_{x}Ga_{1-x}N$ active layer, was fabricated. The $In_{x}Ga_{1-x}N$ MQW heterojunction LED structure was grown by MOCVD on the sapphire substrate with (0001) surface orientation at 800.deg. C. The fabricated LED exhibited forward cut-in voltage of 4~4.5V and reverse breakdown voltage of -13V. Its optical chracteristics showed that the center wavelength of peak emission occurred at 460nm and the optical intensity was increased linearly with respect to the injected electrical current above 5mA.

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