• Journal of electromagnetic engineering and science
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• 제14권1호
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• pp.36-42
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• 2014

In this paper, an epsilon near zero (ENZ) tunneling circuit using a double-ridge rectangular waveguide (RWG) is proposed for the miniaturization of a waveguide component. The proposed ENZ channel and is located in the middle of the input-output RWG (IORWG). The ratio of the height to the width of the channel waveguide is very small compared to the IORWG. By properly adjusting the ridge dimensions, the tunneling frequency of the proposed ENZ channel can be lowered to near the cut-off frequency of the IORWG. For the proposed ENZ tunneling circuit, the approach adopted for extracting the effective permittivity, effective permeability;normalized effective wave impedance, and propagation constant from the simulated scattering parameters was explained. The extracted parameters verified that the proposed channel is an ENZ channel and electromagnetic energy is tunneling through the channel. Simulation and measurement results of the fabricated ENZ channel structure agreed.

• 터널과지하공간
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• 제24권2호
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• pp.120-130
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• 2014

최근 전 세계적으로 여러 건의 대규모 해저터널 건설 사업이 완료되었거나 진행 혹은 계획 중에 있다. 우리나라 역시 한중, 한일 해저터널에 대한 기본 구상이 이루어지고 있으며 동시에 국내 도서 지역을 연결하는 해저터널이 구상 단계에 있다. 국내 기술수준과 해저터널 건설이 갖는 파급효과를 고려할 때, 해저터널 관련 기술의 확보 및 개선이 요구되어진다. 이 논문은 사례연구를 통하여 해저터널이 갖는 특징과 국내외 해 하저터널 건설동향을 분석하였고 해저터널과 관련된 사고 발생 사례를 수집하여 이로부터 요구되는 관련기술에 대하여 정리하였다.

• Transactions on Electrical and Electronic Materials
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• 제11권6호
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• pp.271-274
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• 2010

We examined the tunneling current behaviors of magnetic tunneling junction (MTJ) cells utilizing conductive atomic force microscopy (AFM) interfaced with an external magnetic field generator. By introducing current through coils, a magnetic field was generated and then controlled by a current feedback circuit. This enabled the characterization of the tunneling current under various magnetic fields. The current-voltage (I-V) property was measured using a contact mode AFM with a metal coated conducting cantilever at a specific magnetic field intensity. The obtained magnetoresistance (MR) ratios of the MTJ cells were about 21% with no variation seen from the different sized MTJ cells; the value of resistance $\times$ area (RA) were 8.5 K-12.5 K $({\Omega}{\mu}m^2)$. Since scanning probe microscopy (SPM) performs an I-V behavior analysis of ultra small size without an extra electrode, we believe that this novel characterization method utilizing an SPM will give a great benefit in characterizing MTJ cells. This novel method gives us the possibility to measure the electrical properties of ultra small MTJ cells, namely below $0.1\;{\mu}m\;{\times}\;0.1\;{\mu}m$.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2008년도 추계학술대회 논문집 Vol.21
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• pp.128-129
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• 2008

The annealing effects of $SiO_2/Si_3N_4$ stacked tunneling dielectrics were investigated. I-V characteristics of band gap engineered tunneling gate stacks consisted of $Si_3N_4/SiO_2/Si_3N_4$(NON), $SiO_2/Si_3N_4/SiO_2$(ONO) dielectrics were evaluated and compared with $SiO_2$ single layer using the MOS(Metal-Oxide-Semiconductor) capacitor structure. The leakage currents of engineered tunneling barriers (ONO, NON stacks) are lower than that of the conventional $SiO_2$ single layer at low electrical field. Meanwhile, the engineered tunneling barriers have larger tunneling current at high electrical field and improved electrical characteristics by annealing processes than $SiO_2$ layer.

• Geomechanics and Engineering
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• 제15권3호
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• pp.823-831
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• 2018

The most important issue during shield TBM tunneling in soft ground formations is to appropriately control ground surface settlement. Among various operational conditions in shield TBM tunneling, the face pressure and backfill pressure should be the most important and immediate measure to restrain surface settlement during excavation. In this paper, a 3-D hydro-mechanical coupled FE model is developed to numerically simulate the entire process of shield TBM tunneling, which is verified by comparing with real field measurements of ground surface settlement. The effect of permeability and stiffness of ground formations on tunneling-induced surface settlement was discussed in the parametric study. An increase in the face pressure and backfill pressure does not always lead to a decrease in surface settlement, but there are the critical face pressure and backfill pressure. In addition, considering the relatively low permeability of ground formations, the surface settlement consists of two parts, i.e., immediate settlement and consolidation settlement, which shows a distinct settlement behavior to each other.

• 한국초전도ㆍ저온공학회논문지
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• 제16권1호
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• pp.1-5
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• 2014

We calculated the resonance tunneling energy band in the BCS gap for Type-II superconductor in which periodic potential is generated by external magnetic flux. In this model, penetrating magnetic flux was assumed to be in a fixed lattice state which is not moving by an external force. We observed the existence of two subbands when we used the same parameters as for the $Nd_{1.85}Ce_{0.15}CuO_X$ thin film experiment. The voltages at which the regions of negative differential resistivity (NDR) started after the resonant tunneling ended were in a good agreement with the experimental data in the field region of 1 T - 2.2 T, but not in the high field regions. Discrepancy occurred in the high field region is considered to be caused by that the potential barrier could not be maintained because the current induced by resonant tunneling exceeds the superconducting critical current. In order to have better agreement in the low field region, more concrete designing of the potential rather than a simple square well used in the calculation might be needed. Based on this result, we can predict an occurrence of the electromagnetic radiation of as much difference of energy caused by the 2nd order resonant tunneling in which electrons transit from the 2nd band to the 1st band in the potential wells.

• 한국전기전자재료학회논문지
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• 제22권1호
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• pp.17-21
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• 2009

The electrical characteristics of band-gap engineered tunneling barriers consisting of thin $SiO_2$ and $Si_3N_4$ dielectric layers were investigated for nonvolatile memory device applications. The band structure of band-gap engineered tunneling barriers was studied and the effectiveness of these tunneling barriers was compared with the conventional tunneling $SiO_2$ barrier. The band-gap engineered tunneling barriers composed of thin $SiO_2$ and $Si_3N_4$ layers showed a lower operation voltage, faster speed and longer retention time than the conventional $SiO_2$ tunnel barrier. The thickness of each $SiO_2$ and $Si_3N_4$ layer was optimized to improve the performance of non-volatile memory.

• 한국정보통신학회논문지
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• 제12권12호
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• pp.2188-2194
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• 2008

홈 네트워크는 전자적이고 전기적인 집의 여러 장치와 여러 이더넷과 같은 기술인 무선네트워크, 전화선, 파워라인의 통합인 인터넷과 연결된 게이트웨이와 통신을 한다. 이런 홈 네트워크는 인터넷에 기초를 두며 인터넷을 통해 모든 사람이 홈 네트워크에 접근을 할 수 있다. 홈 네트워크는 주거인이 편하고 안전한 삶을 위해 발전하며, 정보는 보안을 필요로 한다. 그러므로 홈 네트워크의 모든 리모트 접근은 믿을 수 있어야 한다. 이 논문은 홈 네트워크에 안전한 리모트 접근인 VPN에 기초를 둔 계획적이고 필수적인 두 가지 터널링 보안 방법인 L2TP을 분석 하였다.

• 한국자기학회지
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• 제12권6호
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• pp.201-205
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• 2002

경사형 모서리접합을 이용한 터널링 자기저항(tunneling magnetoresistance; TMR) 특성을 연구하였다. 박막 증착과 식각은 스퍼터링과 사이크로트론 전자공명 (electron cyclotron resonance; ECR) 장치를 각각 사용하였다. Si$_3$N$_4$ 장벽층을 이용한 접합의 다층구조는 NiO(60)/Co(10)/NiO(60)/Si$_3$N$_4$(2-6)/NiFe(10) (nm)이었다. 상하부 반강자성체 NiO에 삽입된 wedged 형태의 고정층 Co와 장벽층 Si$_3$N$_4$위에 경사진 비대칭 구조에서 자유층 NiFe간의 접합에서 일어나는 특이한 스핀의존 터널링 현상이 관찰되었다. 외부자장이 0Oe일 때와 접합경계선에 수직방향으로 90Oe일 때 측정한 접합소자의 전류전압특성 곡선이 현저하게 구별되어 나타났다. TMR의 인가 전압의존성은 $\pm$10 V일 때도 약 -10%을 유지하는 매우 안정된 자기저항 특성을 보여주었다.

• Transactions on Electrical and Electronic Materials
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• 제14권5호
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• pp.250-253
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• 2013

In this paper, we fabricated 3D pillar type silicon-oxide-nitride-oxide-silicon (SONOS) devices for high density flash applications. To solve the limitation between erase speed and data retention of the conventional SONOS devices, bandgap-engineered (BE) tunneling oxide of oxide-nitride-oxide configuration is integrated with the 3D structure. In addition, the tunneling oxide is modulated by another method of $N_2$ ion implantation ($N_2$ I/I). The measured data shows that the BE-SONOS device has better electrical characteristics, such as a lower threshold voltage ($V_{\tau}$) of 0.13 V, and a higher $g_{m.max}$ of 18.6 ${\mu}A/V$ and mobility of 27.02 $cm^2/Vs$ than the conventional and $N_2$ I/I SONOS devices. Memory characteristics show that the modulated tunneling oxide devices have fast erase speed. Among the devices, the BE-SONOS device has faster program/erase (P/E) speed, and more stable endurance characteristics, than conventional and $N_2$ I/I devices. From the flicker noise analysis, however, the BE-SONOS device seems to have more interface traps between the tunneling oxide and silicon substrate, which should be considered in designing the process conditions. Finally, 3D structures, such as the pillar type BE-SONOS device, are more suitable for next generation memory devices than other modulated tunneling oxide devices.