• Title/Summary/Keyword: sub-threshold

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Metal-to-Insulator Transitions in La2/3Sr1/3MnO3/LaMnO3 (LSMO/LMO) Superlattices

  • Ryu, Sang-Woo;Jang, Hyun-M.
    • Journal of the Korean Ceramic Society
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    • v.43 no.11 s.294
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    • pp.734-737
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    • 2006
  • A series of manganite-based superlattices composed of half-metallic $La_{2/3}Sr_{1/3}MnO_3/LaMnO_3$ and insulating LaMnO$_3$ stacking layers were fabricated by employing pulsed laser deposition method. The dc resistivity increased drastically by simply reducing the stacking periodicity. The resistivity enhancement was accompanied by a gradual decrease in the temperature (T$_c$) of the Metal-to-Insulator Transition (MIT). This observation was interpreted as a small decrease in the effective metallic fraction near the percolation threshold. For the stacking periodicity less than a certain critical value, there appeared another transition to an insulating state at temperatures far below T$_c$. This low-temperature transition seems to be closely related to the AF-type (C-type) orbital ordering in newly formed insulating domains.

Artificial Neural Network Supported Prediction of Magnetic Properties of Bulk Metallic Glasses (인공신경망을 이용한 벌크 비정질 합금 소재의 포화자속밀도 예측 성능평가)

  • Chunghee Nam
    • Korean Journal of Materials Research
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    • v.33 no.7
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    • pp.273-278
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    • 2023
  • In this study, based on the saturation magnetic flux density experimental values (Bs) of 622 Fe-based bulk metallic glasses (BMGs), regression models were applied to predict Bs using artificial neural networks (ANN), and prediction performance was evaluated. Model performance evaluation was investigated by using the F1 score together with the coefficient of determination (R2 score), which is mainly used in regression models. The coefficient of determination can be used as a performance indicator, since it shows the predicted results of the saturation magnetic flux density of full material datasets in a balanced way. However, the BMG alloy contains iron and requires a high saturation magnetic flux density to have excellent applicability as a soft magnetic material, and in this study F1 score was used as a performance indicator to better predict Bs above the threshold value of Bs (1.4 T). After obtaining two ANN models optimized for the R2 and F1 score conditions, respectively, their prediction performance was compared for the test data. As a case study to evaluate the prediction performance, new Fe-based BMG datasets that were not included in the training and test datasets were predicted using the two ANN models. The results showed that the model with an excellent F1 score achieved a more accurate prediction for a material with a high saturation magnetic flux density.

Study on the Thin-film Transistors Based on TiO2 Active-channel Using Atomic Layer Deposition Technique (원자층 증착 기술을 이용한 TiO2 활성층 기반 TFT 연구)

  • Kim, Sung-Jin
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.28 no.7
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    • pp.415-418
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    • 2015
  • In this paper, $TiO_2$ based thin-film transistors (TFTs) were fabricated using by an atomic layer deposition with high aspect ratio and excellent step coverage. $TiO_2$ semiconducting layer was deposited showing a rutile phase through the rapid thermal annealing process, and exhibited TFT characteristics with a $200{\mu}m$ channel length of low-leakage currents (none of current flow during off-state), stable threshold voltages (-10 V ~ 0 V), and a much higher on/off current ratio (<$10^5$), respectively.

Effects of Various Deposition Rates of Al2O3 Gate Insulator on the Properties of Organic Thin Film Transistor (알루미늄 옥사이드 절연층의 증착율이 유기박막 트랜지스터의 특성에 미치는 영향)

  • Choi, Kyung-Min;Hyung, Gun-Woo;Kim, Young-Kwan;Choi, Eou-Sik;Kwon, Sang-Jik
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.22 no.12
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    • pp.1063-1066
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    • 2009
  • In this study, we fabricated pentacene organic thin film trasistors(OTFTs) which used aluminum oxide as the gate insulator. Aluminum oxide for OTFTs was deposited on glass substrate with a different deposition rate by E-beam evaporation. In case of the deposition rate of $0.1\;{\AA}$, the fabricated aluminum oxide gate insulating OTFT showed a threshold voltage of -1.36 V, an on/off current ratio of $1.9{\times}10^3$ and field effect mobility $0.023\;cm^2/V_s$.

Complexity Issues of Perfect Roman Domination in Graphs

  • Chakradhar, Padamutham;Reddy, Palagiri Venkata Subba
    • Kyungpook Mathematical Journal
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    • v.61 no.3
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    • pp.661-669
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    • 2021
  • For a simple, undirected graph G = (V, E), a perfect Roman dominating function (PRDF) f : V → {0, 1, 2} has the property that, every vertex u with f(u) = 0 is adjacent to exactly one vertex v for which f(v) = 2. The weight of a PRDF is the sum f(V) = ∑v∈V f(v). The minimum weight of a PRDF is called the perfect Roman domination number, denoted by γRP(G). Given a graph G and a positive integer k, the PRDF problem is to check whether G has a perfect Roman dominating function of weight at most k. In this paper, we first investigate the complexity of PRDF problem for some subclasses of bipartite graphs namely, star convex bipartite graphs and comb convex bipartite graphs. Then we show that PRDF problem is linear time solvable for bounded tree-width graphs, chain graphs and threshold graphs, a subclass of split graphs.

Tramadol as a Voltage-Gated Sodium Channel Blocker of Peripheral Sodium Channels Nav1.7 and Nav1.5

  • Chan-Su, Bok;Ryeong-Eun, Kim;Yong-Yeon, Cho;Jin-Sung, Choi
    • Biomolecules & Therapeutics
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    • v.31 no.2
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    • pp.168-175
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    • 2023
  • Tramadol is an opioid analog used to treat chronic and acute pain. Intradermal injections of tramadol at hundreds of millimoles have been shown to produce a local anesthetic effect. We used the whole-cell patch-clamp technique in this study to investigate whether tramadol blocks the sodium current in HEK293 cells, which stably express the pain threshold sodium channel Nav1.7 or the cardiac sodium channel Nav1.5. The half-maximal inhibitory concentration of tramadol was 0.73 mM for Nav1.7 and 0.43 mM for Nav1.5 at a holding potential of -100 mV. The blocking effects of tramadol were completely reversible. Tramadol shifted the steady-state inactivation curves of Nav1.7 and Nav1.5 toward hyperpolarization. Tramadol also slowed the recovery rate from the inactivation of Nav1.7 and Nav1.5 and induced stronger use-dependent inhibition. Because the mean plasma concentration of tramadol upon oral administration is lower than its mean blocking concentration of sodium channels in this study, it is unlikely that tramadol in plasma will have an analgesic effect by blocking Nav1.7 or show cardiotoxicity by blocking Nav1.5. However, tramadol could act as a local anesthetic when used at a concentration of several hundred millimoles by intradermal injection and as an antiarrhythmic when injected intravenously at a similar dose, as does lidocaine.

Dependence of Low-frequency Noise and Device Characteristics on Initial Oxidation Method of Plasma-nitride Oxide for Nano-scale CMOSFET (Nano-CMOSFET를 위한 플라즈마-질화막의 초기 산화막 성장방법에 따른 소자 특성과 저주파 잡음 특성 분석)

  • Joo, Han-Soo;Han, In-Shik;Goo, Tae-Gyu;Yoo, Ook-Sang;Choi, Won-Ho;Choi, Myoung-Gyu;Lee, Ga-Won;Lee, Hi-Deok
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.20 no.1
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    • pp.1-7
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    • 2007
  • In this paper, two kinds of initial oxidation methods i.e., SLTO(Slow Low Temperature Oxidation: $700^{\circ}C$) and RTO(Rapid Thermal Oxidation: $850^{\circ}C$) are applied prior to the plasma nitridation for ultra thin oxide of RPNO (Remote Plasma Nitrided Oxide). It is observed that SLTO has superior characteristics to RTO such as lower SS(Sub-threshold Slope) and improved Ion-Ioff characteristics. Low frequency noise characteristics of SLTO also showed better than RTO both in linear and saturation regime. It is shown that flicker noise is dominated by carrier number fluctuation in the channel region. Therefore, SLTO is promising for nano-scale CMOS technology with ultra thin gate oxide.

Microcrystalline Si TFTs with Low Off-Current and High Reliability

  • Kim, Hyun-Jae;Diep, Bui Van;Bonnassieux, Yvan;Djeridane, Yassine;Abramov, Alexey;Pere, Roca i Cabarrocas
    • 한국정보디스플레이학회:학술대회논문집
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    • 2005.07b
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    • pp.1025-1028
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    • 2005
  • Microcrystalline Si (${\mu}c-Si$) TFTs were fabricated using a conventional bottom gate amorphous Si (a-Si) process. A unique ${\mu}c-Si$ deposition technique and TFT architecture was proposed to enhance the reliability of the TFTs. This three-mask TFT fabrication process is comparable with existing a-Si TFT procesess. In order to suppress nucleation at the bottom interface of Si, before deposition of the ${\mu}c-Si$ an $N_2$ plasma passivation was conducted. A typical transfer characteristic of the TFTs shows a low off-current with a value of less than 1 pA and a sub threshold slop of 0.7 V/dec. The DC stress was applied to verify the use of ${\mu}c-Si$ TFTs for AMOLED displays. After 10,000 s of application of the stress, the off-current was even lowered and sub-threshold slope variation was less than 5%. For AMOLED displays, OLED pixel simulation was performed. A pixel current of 13 ${\mu}A$ was achieved with $V_{data}$ of 10 V. After the simulation, a linear equation for the pixel current was suggested.

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Study on Properties Change of a-C Thin Film by N2 Plasma Treatment (질소 플라즈마처리에 의한 a-C 박막의 전계방출특성 변화에 관한 연구)

  • Ryu, Jeong-Tak;Lee, K.Y.;Honda, S.;Katayama M.;Oura, K.
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.17 no.12
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    • pp.1332-1336
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    • 2004
  • Amorphous carbon (a-C) films have been deposited on Si(100) substrate using RF magnetron system in order to investigate the electron field emission properties. The a-C films were treated by $N_2$ gas plasma at room temperature. Surface morphologices and structural properties of the a-C films before and after $N_2$ plasma treatment were observed by scanning electron microscopy and Raman spectroscope, respectively. Structural properties and surface morphology of the a-C films were changed by $N_2$ plasma treatment. The emission properties can be improved by the plasma treatment according to the contents of nitrogen on the a-C films which is varied by plasma treatment time. Before the plasma treatment, the a-C films are found to have a threshold field of 14 V/$\mu$m, but the a-C film treated by $N_2$ plasma for 30 min exhibit threshold field as low as 6.5 V/$\mu$m.

Threshold Autoregressive Models for VBR MPEG Video Traces (VBR MPEG 비디오 추적을 위한 임계치 자회귀 모델)

  • 오창윤;배상현
    • Journal of the Korea Society of Computer and Information
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    • v.4 no.4
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    • pp.101-112
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    • 1999
  • In this paper variable bit rate VBR Moving Picture Experts Group (MPEG) coded full-motion video traffic is modeled by a nonlinear time-series process. The threshold autoregressive (TAR) process is of particular interest. The TAR model is comprised of a set of autoregressive (AR) processes that are switched between amplitude sub-regions. To model the dynamics of the switching between the sub-regions a selection of amplitude dependent thresholds and a delay value is required. To this end, an efficient and accurate TAR model construction algorithm is developed to model VBR MPEG-coded video traffic. The TAR model is shown to accurately represent statistical characteristics of the actual full-motion video trace. Furthermore. in simulations for the bit-loss rate actual and TAR traces show good agreement.

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