Journal of the Korean Institute of Electrical and Electronic Material Engineers (한국전기전자재료학회논문지)

The Korean Institute of Electrical and Electronic Material Engineers (한국전기전자재료학회)
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Study on Properties Change of a-C Thin Film by N2 Plasma Treatment

질소 플라즈마처리에 의한 a-C 박막의 전계방출특성 변화에 관한 연구

  • 류정탁 (대구대학교 정보통신대학 전자정보공학부) ;
  • ;
  • ;
  • ;
  • Published : 2004.12.01
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Abstract

Amorphous carbon (a-C) films have been deposited on Si(100) substrate using RF magnetron system in order to investigate the electron field emission properties. The a-C films were treated by $N_2$ gas plasma at room temperature. Surface morphologices and structural properties of the a-C films before and after $N_2$ plasma treatment were observed by scanning electron microscopy and Raman spectroscope, respectively. Structural properties and surface morphology of the a-C films were changed by $N_2$ plasma treatment. The emission properties can be improved by the plasma treatment according to the contents of nitrogen on the a-C films which is varied by plasma treatment time. Before the plasma treatment, the a-C films are found to have a threshold field of 14 V/$\mu$m, but the a-C film treated by $N_2$ plasma for 30 min exhibit threshold field as low as 6.5 V/$\mu$m.

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References

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