Journal of the Korean Institute of Electrical and Electronic Material Engineers (한국전기전자재료학회논문지)

The Korean Institute of Electrical and Electronic Material Engineers (한국전기전자재료학회)
권호 표지
DOI QR코드

DOI QR Code

Effects of Various Deposition Rates of Al2O3 Gate Insulator on the Properties of Organic Thin Film Transistor

알루미늄 옥사이드 절연층의 증착율이 유기박막 트랜지스터의 특성에 미치는 영향

  • 최경민 (경원대학교 전자공학과) ;
  • 형건우 (홍익대학교 신소재공학과) ;
  • 김영관 (홍익대학교 정보디스플레이공학과) ;
  • 조의식 (경원대학교 전자공학과) ;
  • 권상직 (경원대학교 전자공학과)
  • Published : 2009.12.01
Download PDF
⟨ Previous Next ⟩

Abstract

In this study, we fabricated pentacene organic thin film trasistors(OTFTs) which used aluminum oxide as the gate insulator. Aluminum oxide for OTFTs was deposited on glass substrate with a different deposition rate by E-beam evaporation. In case of the deposition rate of $0.1\;{\AA}$, the fabricated aluminum oxide gate insulating OTFT showed a threshold voltage of -1.36 V, an on/off current ratio of $1.9{\times}10^3$ and field effect mobility $0.023\;cm^2/V_s$.

Keywords

References

  1. H. Klauk, D. J. Gundlach, J. A. Nichols, and T. N. Jackson, 'Pentacene organic thin-film transistors for circuit and display applications', IEEE Trans. Electron. Dev., Vol. 46, p. 1258, 1999 https://doi.org/10.1109/16.766895
  2. M. Mizukami, N. Hirohata, T. Iseki, K. Ohtawara, T. Tada, S. Yagyu, T. Abe, T. Szuki, Y. Fujisaki, Y. Inoue, S. Tokito, and T. Kurita, 'Flexible AM OLED panel driven by bottom-contact OTFTs', IEEE Electron. Device Lett., Vol. 27, p. 249, 2006 https://doi.org/10.1109/LED.2006.870413
  3. S. K. Park, D. A. Mourey, S. Subramanian, H. E. Anthony, and T. N. Jackson, 'Polymeric substrate spin-cast diF-TESADT OTFT circuits', IEEE Electron. Device Lett., Vol. 29, p. 1004, 2008 https://doi.org/10.1109/LED.2008.2000891
  4. A. Dodabalapur, Z. Bao, A. Makhija, J. G. Laquindanum, V. R. Raju, Y. Feng, H. E. Katz, and J. Rogers, 'Organic smart pixels', Appl. Phys. Lett., Vol. 73, p. 142, 1998 https://doi.org/10.1063/1.121736
  5. P. L. Burn, D. D. C. Bradley, R. H. Friend, D. A. Halliday, A. B. Holmes, R. W. Jackson, and A. Kraft, 'Precursor route chemistry and electronic properties of poly(p-phenylene- vinylene), poly[(2,5-dimethyl-p-phenylene) vinylene] and poly[(2,5-dimethoxy-p-phenylene) vinylene]', J. Chem. Soc., Vol. 1, p. 3225, 1992 https://doi.org/10.1039/P19920003225
  6. D. A. Muller, T. Sorsch, S. Moccio, K. Evans- Lutterodt, and G. Timp, 'The electronic structure at the atomic scale of ultrathin gate oxides', Nature, Vol. 399, p. 758, 1999 https://doi.org/10.1038/21602
  7. L. Niinisto, J. Paivasaari, J. Niinisto, M. Putkonen, and M. Nieminen, 'Advanced electronic and optoelectronic materials by atomic layer deposition: An overview with special emphasis on recent progress in processing of high-k dielectrics and other oxide materials', Phys. Status Solid A, Vol. 201, No. 7, p. 1443, 2004 https://doi.org/10.1002/pssa.200406798
  8. R. H. Tredgold, 'Order in Thin Organic Films', Cambridge University Press, Cambridge, p. 153, 1994