A study of Recess Channel Array Transistor with asymmetry channel for high performance and low voltage Mobile 90nm DRAMs (고성능 저전압 모바일향 90nm DRAM을 위한 비대칭 채널구조를 갖는 Recess Channel Array Transistor의 제작 및 특성)
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- Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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- 2004.11a
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- pp.163-166
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- 2004