Transactions on Electrical and Electronic Materials

The Korean Institute of Electrical and Electronic Material Engineers (한국전기전자재료학회)
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Anomalous Subthreshold Characteristics of Shallow Trench-Isolated Submicron NMOSFET with Capped p-TEOS/SiN

  • Lee, Hyung J. (Department of Electronics Engineering, Andong National University)
  • Published : 2002.09.01
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Abstract

In sub-l/4 ${\mu}{\textrm}{m}$ NMOSFET with STI (Shallow Trench Isolation), the anomalous hump phenomenon of subthreshold region, due to capped p-TEOS/SiN induced defect, is reported. The hump effect was significantly observed as channel length is reduced, which is completely different from previous reports. Channel boron dopant redistribution due to the defect should be considered to improve hump characteristics besides considerations of STI comer and recess. 130

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References

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