• The Journal of Korean Institute of Communications and Information Sciences
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• v.15 no.6
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• pp.467-474
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• 1990

In this paper, the circuit that has characteristics of high speed and low dissipation is described. A 4:1 parallel ADC is constructed by using the designed SCFL(Source Coupled FET Logic). The results of simulation shows that comparators is obtained integrated nonlinearity, $\pm$28mV, compared with limiting value, $\pm$68mV, at 66NHz input signal and 2Gs/s Niquist rates and this paper describes low power dissipation about 0.43W by reducing the elements in a ADC design.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.40 no.7
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• pp.532-541
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• 2003

In a memory, most power is dissipated in high capacitive lines such as predecoder lines, word lines, and bit lines. To reduce the power dissipation in these high capacitive lines, this paper proposes three techniques using charge recycling and charge sharing. One is the charge recycling predecoder (CRPD). The second one is the charge recycling word line decoder (CRWD). The last one is the charge sharing bit line (CSBL) for a ROM. The CRPD and the CRWD recycle the previously used charge in predecoder lines and word lines. Theoretically, the power consumption in predecoder lines and word lines are reduced to a half. The CSBL reduces the swing voltage in the ROM bit lines to very small voltage using a charge sharing technique. the CSBL can significantly reduce the power dissipation in ROM bit lines. The CRPD, the CRWD, and the CSBL consume 82%, 72%, and 64% of the power of previous ROM designs respectively. A charge recycling and charge sharing ROM (CRCS-ROM) with the CRPD, the CRWD, and the CSBL is implemented. A CRCS-ROM with 8K16bits was fabricated in a 0.3${\mu}{\textrm}{m}$ CMOS process. The CRCS-ROM consumes 8.63㎽ at 100MHz with 3.3V. The chip core area is 0.1 $\textrm{mm}^2$.

• ETRI Journal
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• v.30 no.3
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• pp.347-354
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• 2008

In this paper, the design of a low-power 512-bit synchronous EEPROM for a passive UHF RFID tag chip is presented. We apply low-power schemes, such as dual power supply voltage (VDD=1.5 V and VDDP=2.5 V), clocked inverter sensing, voltage-up converter, I/O interface, and Dickson charge pump using Schottky diode. An EEPROM is fabricated with the 0.25 ${\mu}m$ EEPROM process. Power dissipation is 32.78 ${\mu}W$ in the read cycle and 78.05 ${\mu}W$ in the write cycle. The layout size is 449.3 ${\mu}m$ ${\times}$ 480.67 ${\mu}m$.

• Journal of the Korean Institute of Telematics and Electronics C
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• v.34C no.5
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• pp.1-17
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• 1997

With the increasing performance and density of VLSI scircuits as well as the popularity of portable devices such as personal digital assitance, power consumption has emerged as an important issue in the design of electronic systems. Low power design techniqeus have been pursued at all design levels. However, it is more effective to attempt to reduce power dissipation at higher levels of abstraction which allow wider view. In this paper, we propose a simultaneous scheduling and binding scheme which increases the correlation between cosecutive inputs to an operation so that the switched capacitance of execution units is reduced in datapath-dominated circuits. The proposed method is implemented and integrated into the scheduling and assignment part of HYPER synthesis environment. Compared with original HYPER synthesis system, average power saving of 23.0% in execution units and 14.2% in the whole circuits, ar eobtained for a set of benchmark examples.

• JSTS:Journal of Semiconductor Technology and Science
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• v.15 no.1
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• pp.77-84
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• 2015

This paper presents the design of a low-power, low area 256-radix 16-bit crossbar switch employing a 2D Hyper-X network topology. The Hyper-X crossbar switch realizes the high radix of 256 by hierarchically combining a set of 4-radix sub-switches and applies three modifications to the basic Hyper-X topology in order to mitigate the adverse scaling of power consumption and propagation delay with the increasing radix. For instance, by restricting the directions in which signals can be routed, by restricting the ports to which signals can be connected, and by replacing the column-wise routes with diagonal routes, the fanout of each circuit node can be substantially reduced from 256 to 4~8. The proposed 256-radix, 16-bit crossbar switch is designed in a 65 nm CMOS and occupies the total area of $0.93{\times}1.25mm^2$. The simulated worst-case delay and power dissipation are 641 ps and 13.01 W when operating at a 1.2 V supply and 1 GHz frequency. In comparison with the state-of-the-art designs, the proposed crossbar switch design achieves the best energy-delay efficiency of $2.203cycle/ns{\cdot}fJ{\cdot}{\lambda}2$.

• ETRI Journal
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• v.39 no.6
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• pp.866-873
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• 2017

We propose a multilayered-substrate-based power semiconductor discrete device package for a low switching loss and high heat dissipation. To verify the proposed package, cost-effective, low-temperature co-fired ceramic, multilayered substrates are used. A bare die is attached to an embedded cavity of the multilayered substrate. Because the height of the pad on the top plane of the die and the signal line on the substrate are the same, the length of the bond wires can be shortened. A large number of thermal vias with a high thermal conductivity are embedded in the multilayered substrate to increase the heat dissipation rate of the package. The packaged silicon carbide Schottky barrier diode satisfies the reliability testing of a high-temperature storage life and temperature humidity bias. At $175^{\circ}C$, the forward current is 7 A at a forward voltage of 1.13 V, and the reverse leakage current is below 100 lA up to a reverse voltage of 980 V. The measured maximum reverse current ($I_{RM}$), reverse recovery time ($T_{rr}$), and reverse recovery charge ($Q_{rr}$) are 2.4 A, 16.6 ns, and 19.92 nC, respectively, at a reverse voltage of 300 V and di/dt equal to $300A/{\mu}s$.

• The Journal of the Acoustical Society of Korea
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• v.18 no.3E
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• pp.44-48
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• 1999

The CMOS four-quadrant analog multiplier for low-voltage low-power applications are presented in this thesis. The circuit approach is based on the characteristic of the LV (Low-Voltage) composite transistor which is one of the useful analog building block. SPICE simulations are carried out to examine the performances of the designed multiplier. Simulation results are obtained by 0.6㎛ CMOS parameters with 2V power supply. The basic configuration of the multiplier is the CMOS Gilbert cell with two LV composite transistors. The linear input range of the multiplier is over ±0.4V with a linearity error of less than 1.3%. The measured -3dB bandwidth is 288MHz and the power dissipation is 255 ㎼.

• Proceedings of the IEEK Conference
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• 1998.10a
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• pp.707-710
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• 1998

This paper presents a new voltage down converter(VDC) for low power, high speed DRAM. This VDC Consists of RVG(Reference Voltage Generator) and Driver Circuit. And it is independent of temperature variation, and Supply Voltage. Using weak inversion region, this RVG dissipates low power. Internal Voltage Source of this VDC is stable in spite of high speed operation of memory array. This circuit is designed with a $0.65\mu\textrm{m}$ nwell CMOS technology. In HSPICE simulation results, Temperature dependency of this RVG is $20\muV/^{\circ}C,$ supply voltage dependency is $\pm0.17%,$ $VCC=3.3V\pm0.3V,$ and current dissipation is $5.22\muA.$ Internal voltage source bouncing of this VDC is smaller than conventional VDC.

• JSTS:Journal of Semiconductor Technology and Science
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• v.17 no.3
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• pp.438-445
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• 2017

This paper presents a low-power high-resolution band-pass ${\Sigma}{\Delta}$ ADC for accelerometer applications. The proposed band-pass ${\Sigma}{\Delta}$ ADC consists of a high-performance 6-th order feed-forward ${\Sigma}{\Delta}$ modulator with 1-bit quantization and a low-power, area-efficient digital filter. The ADC is fabricated in 180 nm 1P6M mixed-signal CMOS process with a die area of $5mm^2$. This high-resolution ADC got 90 dB peak signal to noise plus distortion ratio (SNDR) and 96 dB dynamic range (DR) over 4 kHz bandwidth, while the intermediate frequency (IF) is shifting from 100 KHz to 200 KHz. The power dissipation of the chip is 5.6 mW under 1.8 V (digital)/3.3 V (analog) power supply.

• Proceedings of the KIEE Conference
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• 2001.11c
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• pp.348-351
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• 2001

In this paper, the Gm-C filter for low voltage and low power applications using a fully-differential transconductor is presented. The designed transconductor using the series composite transistors and the low voltage composite transistors has wide input range at low supply voltage. A negative resistor load (NRL) technology for high DC gain of the transconductor is employed with a common mode feedback(CMFB). As a design example, the third-order Elliptic lowpass filter is designed. The designed filter is simulated and examined by HSPICE using TSMC $0.35{\mu}m$ CMOS n-well parameters. The simulation results show 138kHz cutoff frequency and 11.05mW power dissipation with a 3.3V supply voltage.