• 마이크로전자및패키징학회지
• /
• 제13권4호
• /
• pp.1-7
• /
• 2006

WLCSP(wafer level chip size package)는 웨이퍼 레벨에서 패키지 공정이 이루어지는 차세대 패키지 중 하나이다. WLCSP는 웨이퍼 레벨에서 패키지 공정이 이루어진다는 특징으로 인하여 웨이퍼당 생산되는 반도체 칩의 수에 따라 그 패키징 비용을 크게 줄일 수 있다는 장점이 있다. 그러나 응력 버퍼 역할을 하는 기판을 없애는 혁신적인 구조로 인하여 솔더 조인트의 신뢰성이 기존의 BGA 패키지에 비하여 취약하게 되는데, 이러한 솔더 조인트 신뢰성에 대하여 반도체 칩과 솔더볼을 연결하는 폴리머 절연층은 열팽창계수 차이에 의해 발생하는 응력을 흡수하는 중요한 역할을 하게 된다. 본 연구에서는 하이닉스에서 개발한 Omega-CSP를 사용하여 솔더볼 배열 변화와 제 1 절연층의 특성에 따른 솔더 조인트의 열피로 특성을 평가하였다. 그 결과 절연층의 특성 변화가 솔더 조인트의 열피로 특성에 주는 영향은 솔더볼 배열 구조에 따라 변화되는 것을 확인하였다.

• 마이크로전자및패키징학회지
• /
• 제18권1호
• /
• pp.41-47
• /
• 2011

Currently, there is widespread adoption of silicon-based technologies for the implementation of radio frequency (RF) integrated passive devices (IPDs) because of their low-cost, small footprint and high performance. Also, the need for high speed data transmission and reception coupled with the ever increasing demand for mobility in consumer devices has generated a great interest in low cost devices with smaller form-factors. The UWB BPF makes use of lumped IPD technology on a silicon substrate CSMP (Chip Scale Module Package). In this paper, this filter shows 2.0 dB insertion loss and 15 dB return loss from 7.0 GHz to 9.0 GHz. To the best of our knowledge, the UWB band-pass-filter developed in this paper has the smallest size ($1.4\;mm{\times}1.2\;mm{\times}0.40\;mm$) while achieving equivalent electrical performance.

• 한국마이크로전자및패키징학회:학술대회논문집
• /
• 한국마이크로전자및패키징학회 2001년도 3rd Korea-Japan Advanced Semiconductor Packaging Technology Seminar
• /
• pp.121-145
• /
• 2001

Chip Size Packages (CSP) are now widely used in high speed DRAM. The major driving farce of CSP development is its superior electrical performance than that of conventional package. However, the power dissipation of high speed DRAM like DDR or RAMBUS DRAM chip reaches up to near 2W. This fact makes the thermal management methods in DRAM package be more carefully considered. In this study, the thermal performances of 3 type CSPs named $\mu-BGA$^{TM}$$ $UltraCSP^{TM}$ and OmegaCSP$^{TM}$ were measured under the JEDEC specifications and their thermal characteristics were of a simulation model utilizing CFD and FEM code. The results show that there is a good agreement between the simulation and measurement within Max. 10% of $\circledM_{ja}$. And they show the wafer level CSPs have a superior thermal performance than that of $\mu-BGA.$ Especially the analysis results show that the thermal performance of wafer level CSPs are excellent fur modulo level in real operational mode without any heat sink.

• 한국정보통신학회논문지
• /
• 제13권12호
• /
• pp.2647-2654
• /
• 2009

본 논문에서는 AMBA 기반으로 사용될 수 있는 H.264용 Encoder Hardware 모듈 (Intra Prediction, Deblocking Filter, Context-Based Adaptive Variable Length Coding, Motion Estimation)을 Integration하여 설계하였다. 설계된 모듈은 한 매크로 블록당 최대 440 cycle내에 동작한다. 제안된 인코더 구조를 검증하기 위하여 JM 9.4부터 reference C를 개발하였으며, reference C로부터 test vector를 추출하여 설계 된 회로를 검증하였다. 제안된 회로는 최대 166MHz clock에서 동작하며, 합성결과 Charterd 0.18 um 공정에 램 포함 약 173만 gate 크기이다. MPW제작시 chip size $6{\times}6mm$의 크기와 208 pin의 Package 형태로 제작 하였다.

• 전기학회논문지
• /
• 제57권4호
• /
• pp.653-659
• /
• 2008

This paper describes the design of high power transistor packages using high power chip transistor dies, chip capacitors and a new wire bonding technique. Input impedance variation and output power performances according to wire inductance and resistance for internal matching are also discussed. A multi crossing type(MCT) wire bonding technique is proposed to replace the conventional stepping stone type(SST) wire bonding technique, and eventually to improve the output power performances of high power transistor packages. Using the proposed MCT wire bonding technique, it is possible to design high power transistor packages with highly improved output power compared to SST even the package size is kept to be the same.

• 한국마이크로전자및패키징학회:학술대회논문집
• /
• 한국마이크로전자및패키징학회 2002년도 춘계 기술심포지움 논문집
• /
• pp.203-207
• /
• 2002

CSP(Chip Size Packaging) SAW Filter Package에 대해서, 유한요소해석(Finite Element Analysis) 컴퓨터 Simulation 프로그램인 ANSYS를 이용하여 Package의 온도 분포를 해석하였다. 신뢰성(reliability) Test 조건에서 Transient Thermal Simulation을 한 후, 조건을 변화시켜 가면서 Chip 내부 온도가 어떻게 변화하는지 알아보았다. Chip에 1.8 hour 동안 4W의 열원을 주고, 주위는 2$0^{\circ}C$ 자연대류로 놓고 Transient Thermal Simulation한 결과는 약 99$^{\circ}C$로, 허용 가능한 온도인 11$0^{\circ}C$보다 약 11$^{\circ}C$ 낮음을 알 수 있었다. 또한 이는 실험값인 약 95$^{\circ}C$와 유사한 값을 나타내었다.

• 대한기계학회논문집
• /
• 제18권8호
• /
• pp.2158-2166
• /
• 1994

In order to understand the package crack emanating from the edge of leadframe after the delamination between leadframe and epoxy molding compound in an electronic packaging of surface mounting type, the M-integral and J-integral in fracture mechanics are obtained. The effects of geometry, material properties and molding process temperature on the package crack are investigated taking into account the temperature dependence of the material properties, which simulates a more realistic condition. If the temperature dependence of the material properties is considered the result of analysis conforms with observations that the crack is kinked at between 50 and 65 degree. However, in case of constant material properties at the room temperature it is found that the J-integral is underestimated and the kink crack angle is different form the observation. The effects of the material properties and molding process temperature on J-integral and crack angle are less significant that the chip size for the cases considered here. It is suggested that the geometric factors such as ship size, leadframe size are to be well designed in order to prevent(or control) the occurrence and propagation of the package crack.

• 한국마이크로전자및패키징학회:학술대회논문집
• /
• 한국마이크로전자및패키징학회 2002년도 춘계 기술심포지움 논문집
• /
• pp.138-141
• /
• 2002

There are continuous efforts in the electronics industry to a reduced electronic package size. Reducing the size of electronic packages can be achieved by a variety of means, and for ball grid array(BGA) packages an effective method is to decrease the pitch between the individual balls. Chip scale package(CSP) and BGA are now one of the major package types. However, a reduced package size has the negative effect of reducing board-level reliability. The reliability concern is for the different thermal expansion rates of the two-substrate materials and how that coefficient CTE mismatch creates added stress to the BGA solder joint when thermal cycled. The point of thermal fatigue in a solder joint is an important factor of BGA packages and knowing at how many thermal cycles can be ran before failure in the solder BGA joint is a must for designing a reliable BGA package. Reliability of the package was one of main issues and underfill was required to improve board-level reliability. By filling between die and substrate, the underfill could enhance the reliability of the device. The effect of underfill on various thermomechanical reliability issues in $\mu$BGA packages is studied in this paper.

• Journal of Welding and Joining
• /
• 제16권4호
• /
• pp.92-97
• /
• 1998

Because of the low melting temperature of solder, each temperature cycle initiates an irrecoverable creep deformation at the solder interconnection which connects the package body with the PCB. The crack starts and propagates from the position where the creep deformation is maximized. This work has tried to compare and analyze the thermal fatigue life of solder interconnection which is affected by the lead material, the size of die pad, chip thickness, and interface delamination of 48-Pin TSOP under the temperature cycle ($0^{\circ}C$~1$25^{\circ}C$). The crack initiation position and thermal fatigue life which are calculated by using FEA method are well matched with the results of experiments. The thermal Fatigue life of copper lead frame is extended around 3.6 times longer than that of alloy 42 lead frame. It is maximized when the chip size is matched with the length of the lead. It tends to be extended as the thickness of chip got thinner. As the interfacial delamination between die pad and EMC is increased, the thermal fatigue life tends to decrease in the beginning of delamination, and increase after the delamination grew after 45% of the length of die pad.

• 한국전기전자재료학회:학술대회논문집
• /
• 한국전기전자재료학회 2006년도 추계학술대회 논문집 Vol.19
• /
• pp.221-221
• /
• 2006

The SMD type P-N junction diode with ceramic package for diode case were fabricated. It was made this diode with simple process from $Al_2O_3$ ceramic chip, solder preform, diode chip, coating reagent and conductive paste for chip terrmination. Its merit is small size, easy manufacture. fast cooling with ceramic case. The electric characteristics of the diode such as reverse recovery time, breakdown voltage, forward voltage, and leakage current were 5 28ns, 1322V, 1.08V, $0.45{\mu}A$.