• JSTS:Journal of Semiconductor Technology and Science
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• 제8권1호
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• pp.11-20
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• 2008

The structure of 2-bit/cell flash memory device was characterized for sub-50 nm non-volatile memory (NVM) technology. The memory cell has spacer-type storage nodes on both sidewalls in a recessed channel region, and is erased (or programmed) by using band-to-band tunneling hot-hole injection (or channel hot-electron injection). It was shown that counter channel doping near the bottom of the recessed channel is very important and can improve the $V_{th}$ margin for 2-bit/cell operation by ${\sim}2.5$ times. By controlling doping profiles of the channel doping and the counter channel doping in the recessed channel region, we could obtain the $V_{th}$ margin more than ${\sim}1.5V$. For a bit-programmed cell, reasonable bit-erasing characteristics were shown with the bias and stress pulse time condition for 2-bit/cell operation. The length effect of the spacer-type storage node is also characterized. Device which has the charge storage length of 40 nm shown better ${\Delta}V_{th}$ and $V_{th}$ margin for 2-bit/cell than those of the device with the length of 84 nm at a fixed recess depth of 100 nm. It was shown that peak of trapped charge density was observed near ${\sim}10nm$ below the source/drain junction.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2011년도 제40회 동계학술대회 초록집
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• pp.440-440
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• 2011

We report on the non-volatile memory characteristics of a bistable organic memory (BOM) device with Au nanoparticles (NPs) embedded in a conducting poly N-vinylcarbazole (PVK) colloids hybrid layer deposited on flexible polyethylene terephthalate (PET) substrates. Transmission electron microscopy (TEM) images show the Au nanoparticles distributed isotropically around the surface of a PVK colloid. The average induced charge on Au nanoparticles, estimated using the C-V hysteresis curve, was large, as much as 5 holes/NP at a sweeping voltage of ${\pm}3$ V. The maximum ON/OFF ratio of the current bistability in the BOM devices was as large as $1{\times}105$. The cycling endurance tests of the ON/OFF switching exhibited a high endurance of above $1.5{\times}105$ cycles and a high ON/OFF ratio of ~105 could be achieved consistently even after quite a long retention time of more than $1{\times}106$ s.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2002년도 추계학술대회 논문집 Vol.15
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• pp.186-189
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• 2002

The MFIS capacitors were fabricated using a metalorganic decomposition method. Thin layers of $CeO_2$ were deposited as a buffer layer on Si substrate and BLT thin films were used as a ferroelectric layer. The electrical and structural properties of the MFIS structure were investigated. X-ray diffraction was used to determine the phase of the BLT thin films and the quality of the $CeO_2$ layer. The morphology of films and the interface structures of the BLT and the $CeO_2$ layers were investigated by scanning electron microscopy. The width of the memory window in the C-V curves for the MFIS structure is 4.78 V. The experimental results show that the BLT-based MFIS structure is suitable for non-volatile memory FETs with large memory window.

• 한국전기전자재료학회논문지
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• 제22권1호
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• pp.17-21
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• 2009

The electrical characteristics of band-gap engineered tunneling barriers consisting of thin $SiO_2$ and $Si_3N_4$ dielectric layers were investigated for nonvolatile memory device applications. The band structure of band-gap engineered tunneling barriers was studied and the effectiveness of these tunneling barriers was compared with the conventional tunneling $SiO_2$ barrier. The band-gap engineered tunneling barriers composed of thin $SiO_2$ and $Si_3N_4$ layers showed a lower operation voltage, faster speed and longer retention time than the conventional $SiO_2$ tunnel barrier. The thickness of each $SiO_2$ and $Si_3N_4$ layer was optimized to improve the performance of non-volatile memory.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2003년도 춘계학술대회 논문집 센서 박막재료 반도체 세라믹
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• pp.186-189
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• 2003

The MFIS capacitors were fabricated using a metalorganic decomposition method. Thin layers of $ZrO_2$ and $CeO_2$ were deposited as a buffer layer on Si substrate and BLT thin films were used as a ferroelectric layer. The electrical and structural properties of the MFIS structure were investigated. X -ray diffraction was used to determine the phase of the BLT thin films and the quality of the $ZrO_2$ and $CeO_2$ layer. AES show no interdiffusion and the formation of amorphous $SiO_2$ layer is suppressed by using the $ZrO_2$ and $CeO_2$ film as buffer layer between the BLT film and Si substrate. The width of the memory window in the C-V curves for the $BLT/ZrO_2/Si$ and $BLT/CeO_2/Si$ structure is 2.94 V and 1.3V, respectively. The experimental results show that the BLT-based MFIS structure is suitable for non-volatile memory FETs with large memory window.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2003년도 추계학술대회 논문집 Vol.16
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• pp.23-26
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• 2003

The BLT thin film and MgO buffer layer were fabricated using a metalorganic decomposition method and the DC sputtering technique. The MgO thin film was deposited as a buffer layer on $SiO_2/Si$ and BLT thin films were used as a ferroelectric layer. The electrical of the MFIS structure were investigated by varying the MgO layer thickness. TEM showsno interdiffusion and reaction that suppressed by using the MgO film as abuffer layer. The width of the memory window in the C-Y curves for the MFIS structure decreased with increasing thickness of the MgO layer Leakage current density decreased by about three orders of magnitude after using MgO buffer layer. The results show that the BLT and MgO-based MFIS structure is suitable for non-volatile memory FETs with large memory window.

• 한국정보과학회논문지:컴퓨팅의 실제 및 레터
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• 제13권7호
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• pp.476-487
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• 2007

플래시 메모리는 전원이 끊기더라도 정보를 유지할 수 있는 비 휘발성 메모리로써 빠른 접근 속도, 저 전력 소비, 간편한 휴대성 등의 장점을 가진다. 플래시 메모리는 다른 메모리와 달리 "쓰기 전 지우기"(erase before write) 성질과 제한된 수의 지우기 연산을 수행할 수 없는 성질을 지닌다. 이와 같은 하드웨어 특성들로 인해 소프트웨어인 플래시 변환 계층(FTL: flash translation layer)을 필요로 한다. FTL은 파일 시스템의 논리주소를 플래시 메모리의 물리주소로 바꾸어주는 소프트웨어로써 FTL의 알고리즘으로 인해 플래시 메모리의 성능, 마모도 등이 좌우된다. 이 논문에서는 새로운 FTL의 알고리즘인 EAST를 제안한다. EAST는 재할당 블록(reallocation block)을 이용한 효율적인 공간 관리 기법으로 로그 블록의 개수를 최적화 시키고, 블록 상태를 사용한 사상 기법을 사용하며, 플래시 메모리의 공간을 효율적으로 관리한다. EAST는 특히 플래시 메모리의 용량이 크고 사용하는 용량이 작을 경우 FAST보다 더 나은 성능을 보인다.

• 한국정보통신학회논문지
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• 제18권1호
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• pp.103-108
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• 2014

스마트폰과 같은 휴대용 기기에서 많이 사용되는 플래쉬 메모리는 비휘발성 저장장치로 작은 크기에 대용량 데이터를 안정적으로 저장할 수 있는 장점을 가지고 있다. 플래쉬 메모리에 저장된 대용량 데이터에 대한 질의 연산을 효율적으로 처리하기 위하여 색인을 사용해야 한다. 그러나 플래쉬 메모리는 쓰기 연산의 속도가 느리고 덮어쓰기 연산을 지원하지 않기 때문에 기존의 색인을 평가하고 개선점을 파악할 필요가 있다. 이 논문에서는 플래쉬 메모리에 적용한 공간분할 기법의 공간 색인에 대한 성능을 평가한다. 이를 위하여 고정그리드파일을 구현하여 다양한 환경에서 질의 연산과 변경 연산의 평균 연산 수행 속도를 측정한다. 그리고 자기디스크 저장장치에서의 수행속도와 비교한다.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 1991년도 추계학술대회 논문집
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• pp.29-32
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• 1991

Non-volatile SNOSFET memory devices using CMOS 1Mbit design rule(1.2$\mu\textrm{m}$), whose channel width and length are 15${\times}$1.5$\mu\textrm{m}$, 15${\times}$1.5$\mu\textrm{m}$, 2.0${\times}$15$\mu\textrm{m}$ and length are 15${\times}$1.7$\mu\textrm{m}$, respectivley, were fabricated. And the transfer, Id-Vd and switching characteristics of the devices were investigated. As a result, the 15${\times}$1.5$\mu\textrm{m}$ device was good in the transfer characteristics and the switching characteristics were favourable, which had $\Delta$V$\sub$TH/=6.3V by appling pulse voltage of V$\sub$w/=+34V, Tw=50msec.

• Bulletin of the Korean Chemical Society
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• 제32권3호
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• pp.783-784
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• 2011