• Journal of the Institute of Electronics and Information Engineers
• /
• v.50 no.12
• /
• pp.63-70
• /
• 2013

This paper describes a high PSRR low-dropout(LDO) linear regulator for wide frequency range without output-capacitor. Owing to both of the cascode compensation technique and the current buffer compensation technique in nested Miller compensation loop, the proposed LDO not only maintaines high stability but also achieves high PSRR over wide frequency range with reasonable on-chip capacitances. Since the external capacitor is removed by the proposed compensation techniques, the cost for pad is eliminated. The designed LDO works under the input voltage range from 2.5V to 4.5V and provides up to 10mA load current with the output voltage of 1.8V. The LDO was implemented with 0.18um CMOS technology and the area is 300um X 120 um. The measured power supply rejection ratio(PSRR) is -76dB and -43dB at DC and 1MHz, respectively. The operating current is 25uA.

• Journal of IKEEE
• /
• v.20 no.3
• /
• pp.318-321
• /
• 2016

As IoT industry are growing fast, The importance of power management system is also being magnified. CMOS High power-supply rejection ratio(PSRR) Low-dropout(LDO) regulator is achieved by the proposed ripple Subtractor, Feed-forward capacitor and OTA in this paper. The LDO is implemented in $0.18-{\mu}m$ CMOS technology. With the proposed structures, in the maximum loading of 40mA, Simulation result achieves PSRR of -73.4dB at 500kHz and PSRR better than -40dB when frequency is below 10MHz with $6.8-{\mu}F$ output capacitor.

• Proceedings of the KAIS Fall Conference
• /
• 2010.11a
• /
• pp.378-381
• /
• 2010

본 논문에서는 LDO레귤레이터의 PSRR을 향상 및 전압가변 조정이 가능한 능동 Replica LDO 레귤레이터를 설계하였다. 일반적인 레귤레이터의 PSRR과 회로의 안정성 확보를 위해서 사용된 Replica회로의 경우, 안정된 동작을 유지하기 위해서는 DC 매칭이 이루어져야 한다. 본 논문에서는 능동 Replica LDO회로를 제안하였다. 제안된 회로는 CMFB회로에 의하여 DC 전위의 매칭이 이루어지도록 하였으며, 레귤레이터의 출력전압도 일정한 범위내에서 조정이 가능하다. 또한 HSPCIE시뮬레이션 결과, 제안된 능동 Replica LDO회로의 PSRR특성이 기존 LDO구조에 비하여 좋은 결과을 얻을 수 있음을 확인하였다.

• JSTS:Journal of Semiconductor Technology and Science
• /
• v.16 no.4
• /
• pp.528-533
• /
• 2016

A low voltage high PSRR CMOS Bandgap circuit capable of generating a stable voltage of less than 1 V (0.8 V and 0.5 V) robust to Process, Voltage and Temperature (PVT) variations is proposed. The high PSRR of the circuit is guaranteed by a low-voltage current mode regulator at the central aspect of the bandgap circuitry, which isolates the bandgap voltage from power supply variations and noise. The isolating current mirrors create an internal regulated voltage $V_{reg}$ for the BG core and Op-Amp rather than the VDD. These current mirrors reduce the impact of supply voltage variations. The proposed circuit is implemented in a $0.35{\mu}m$ CMOS technology. The BGR circuit occupies $0.024mm^2$ of the die area and consumes $200{\mu}W$ from a 5 V supply voltage at room temperature. Experimental results demonstrate that the PSRR of the voltage reference achieved -118 dB at frequencies up to 1 kHz and -55 dB at 1 MHz without additional circuits for the curvature compensation. A temperature coefficient of $60 ppm/^{\circ}C$ is obtained in the range of -40 to $120^{\circ}C$.

• Proceedings of the KAIS Fall Conference
• /
• 2011.05a
• /
• pp.362-365
• /
• 2011

본 논문에서는 PSRR특성을 향상할 수 있는 능동 Replica LDO레귤레이터 회로를 설계하였고, 능동 Replica LDO레귤레이터의 Replica단과 출력단에서 발생할 수 있는 DC전압 부정합을 최소화하기 위하여 DC정합이 가능한 전압제어회로를 설계하였다. 설계된 회로에서 DC정합을 위한 전압제어회로를 사용함으로써 PSRR 특성향상과 함께 안정된 출력특성을 얻을 수 있었다. HSPICE 시뮬레이션 결과, 5V 가변입력할 때, DC출력특성은 3V∼3.12V까지 일정한 값을 유지함을 알 수 있었으며 PSRR특성은 -28@10HZ로 확인되었다.

• Journal of Sensor Science and Technology
• /
• v.5 no.6
• /
• pp.25-34
• /
• 1996

In this paper, we have designed signal conditioning circuitry for piezoresistive pressure sensor. Signal conditioning circuitry consists of voltage reference circuit for sensor driving voltage and instrument amplifier for sensor signal amplification. Signal conditioning circuitry is simulated using HSPICE in a single poly double metal $1.5\;{\mu}m$ BiCMOS technology. Simulation results of band-gap reference circuit showed that temperature coefficient of $21\;ppm/^{\circ}C$ at the temperature range of $0\;{\sim}\;70^{\circ}C$ and PSRR of 80 dB. Simulation results of BiCMOS amplifier showed that dc voltage gain, offset voltage, CMRR, CMR and PSRR are outperformed to CMOS and Bipolar, but power dissipation and noise voltage were more improved in CMOS than BiCMOS and Bipolar. Designed signal conditioning circuitry showed high input impedance, low offset and good CMRR, therefore, it is possible to apply sensor and instrument signal conditioning circuitry.

• Journal of IKEEE
• /
• v.18 no.1
• /
• pp.37-44
• /
• 2014

In this paper we present an LDO based on an error amplifier. The designed error amplifier has a gain of 89.93dB at low frequencies. This amplifier's Bandwidth is 50.8MHz and its phase margin is $59.2^{\circ}C$. Also we proposed a BGR. This BGR has a low output variation with temperature and its PSRR at 1 KHz is -71.5dB. For a temperature variation from $-40^{\circ}C$ to $125^{\circ}C$ we have just 9.4mV variation in 3.3V LDO output. Also it is stable for a wide range of output load currents [0-200mA] and a $1{\mu}F$ output capacitor and its line regulation and especially load regulation is very small comparing other papers. The PSRR of proposed LDO is -61.16dB at 1 KHz. Also we designed it for several output voltages by using a ladder of resistors, transmission gates and a decoder. Low power consumption is the other superiority of this LDO which is just 1.55mW in full load. The circuit was designed in $0.35{\mu}m$ CMOS process.

• Proceedings of the Korean Institute of Information and Commucation Sciences Conference
• /
• 2010.05a
• /
• pp.483-485
• /
• 2010

A 200kS/s 10-bit successive approximation(SA) ADC with a rail-to-rail input range is proposed. The proposed SA ADC consists of DAC, comparator, and successive approximation register(SAR) logic. The folded-type capacitor DAC with the boosted NMOS switches is used to reduce the power consumption and chip area. Also, the time-domain comparator which uses a fully differential voltage-to-time converter improves the PSRR and CMRR. The SAR logic uses the flip-flop with a half valid window, it results in the reduction of the power consumption and chip area. The proposed SA ADC is designed by using a $0.18{\mu}m$ CMOS process with 1V supply.

• Proceedings of the KIEE Conference
• /
• 1995.07c
• /
• pp.1108-1110
• /
• 1995

This paper presents a balanced CMOS complementary folded cascode OP-AMP topology that achieves improved DC gain using the gain boosting technique, a high unity-gain frequency and improved slew rate using the CMOS complementary cascode structure and a high PSRR using the balanced output stage. Bode-plot measurements of a balanced CMOS complementary folded cascode OP-AMP show a DC gain of 80dB, a unity-gain frequency of 110MHz and a slew rate of $274V/{\mu}s$(1pF load). This balanced CMOS complementary folded cascode OP-AMP is well suited for high frequency analog signal processing applications.

• Journal of the Korean Institute of Telematics and Electronics C
• /
• v.34C no.4
• /
• pp.1-15
• /
• 1997

This paper proposes CMOS on-chip voltage and current reference circuits that operate at supply voltages between 2.5V and 5.5V without using a vonventional bandgap voltage structure. The proposed reference circuits based on enhancement-type MOS transistors show low cost, compatibility with other on-chip MOS circuits, low-power consumption, and small-chip size. The prototype was implemented in a 0.6 um n-well single-poly double-metal CMOS process and occupies an active die area of $710 um \times 190 um$. The proposed voltage reference realizes a mean value of 0.97 V with a standard deviation of $\pm0.39 mV$, and a temperature coefficient of $8.2 ppm/^{\circ}C$ over an extended temeprature range from TEX>$-25^{\circ}C$ to $75^{\circ}C$. A measured PSRR (power supply rejection ratio) is about -67 dB at 50kHz.