• Journal of the Microelectronics and Packaging Society
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• v.29 no.2
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• pp.99-105
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• 2022

As the chip size gets smaller, the width of the electrode line is also fine, and the density of interconnections is increasing. As a result, RC delay is becoming a problem due to the difference in resistance between the capacitor layer and the electrical conductivity layer. To solve this problem, the development of electrodes with high electrical conductivity and dielectric materials with low dielectric constant is required. In this study, we developed low dielectric ink by mixing commercial PSR which protect PCB's circuits from external factors and PI with excellent thermal property and low-k characteristics. As a result, the ink mixture of PSR and PI 10:3 showed the best results, with a dielectric constant of about 2.6 and 2.37 at 20 GHz and 28 GHz, respectively, and dielectric dissipation was measured at about 0.022 and 0.016. In order to verify the applicability of future applications, various line-width transmission lines produced on Teflon were evaluated, and as a result, the loss of transmission lines using low dielectric ink mixed with PI was 0.12 dB less on average in S21 than when only PSR was used.

• Korean Journal of Materials Research
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• v.17 no.7
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• pp.386-389
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• 2007

The dielectric properties of $(Ba_{0.5}Sr_{0.5})TiO_3$ ferroelectric thin films have been investigated according to the substrates in order to optimize the their properties. MgO, r-plane sapphire, and poly-crystalline sapphire (Alumina) substrates have been used to deposite $(Ba_{0.5}Sr_{0.5})TiO_3$ ferroelectric thin films by RF magnetron sputtering. The BST thin films deposited on the single crystal (100)MgO substrates have high tunability and low dielectric loss. These results are caused by a low misfit between the lattice parameters of the BST films and the substrate. The BST films deposited on r-plane sapphire have relatively high misfit, and the tunability of 17% and dielectric loss of 0.0007. To improve the dielectric properties of the BST films, the post-annealing methods has been introduced. The BST films deposited on (100)MgO, (1102)r-plane sapphire, and poly-crystalline sapphire substrates have best properties in post-annealing conditions of $1050^{\circ}C$, $1100^{\circ}C$, and $1150^{\circ}C$, respectively. The different optimal post-annealing conditions have been found according to the different misfits between the films and substrates, and thermal expansion coefficients. Moreover, the films deposited on alumina substrate which is relatively cheap have a good tunability properties of 23% by the post-annealing.

• Advances in materials Research
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• v.1 no.3
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• pp.191-204
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• 2012

In this paper, we report on the obtention of nanocrystalline $SrMoO_4$ synthesized through modified combustion process. These powders were characterized by X-ray diffraction, Fourier Transform Raman and Infrared Spectroscopy. These studies reveal that the scheelite-type $SrMoO_4$ crystallizes in tetragonal structure with I41/${\alpha}$ (N#88) space group. Transmission electron microscopy image shows that the nanocrystalline $SrMoO_4$ powders have average size of 18 nm. The optical band gap determined from the UV-V is absorption spectra for the as prepared sample is 3.7 eV. These powders showed a strong green photoluminescence emission. The samples are sintered at a relatively low temperature of $850^{\circ}C$. The morphology of the sintered pellet is studied with scanning electron microscopy. The dielectric constant and loss factor values obtained at 5 MHz for a well sintered $SrMoO_4$ pellet has been found to be 9.50 and $7.5{\times}10^{-3}$ respectively. Thus nano $SrMoO_4$ is a potential candidate for low temperature co-fired ceramics and luminescent applications.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2003.11a
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• pp.279-282
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• 2003

For the millimeter-wave dielectrics, Forsterite-based ceramics were produced. Pure forsterite ceramics($Mg_2SiO_4$) shows porous micro-structure and very low Q*f values, which is not suitable for the dielectrics for the millimeter-wave band. Several sintering aids including $Al_2O_3$, $Li_2CO_3$, $Li_2SiO_4$, were added to the forsterite ceramics in order to produce dense low-loss dielectrics. Among these additives, $Li_2CO_3$ is the most effective sintering aids. Several sub-components including NiO, ZnO, $SnO_2$, $TiO_2$, were added to enhance the microwave dielectric properties. $TiO_2$ is the most effective additive to enhance the dielectric properties at microwave bands. The simultaneous addition of $TiO_2$ and $Li_2CO_3$ increases Q*f value over 170,000, which can be used as dielectrics in millimeter-wave bands.

• Proceedings of the KIEE Conference
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• 2007.07a
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• pp.1267-1268
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• 2007

In this study a low-signal equivalent circuit based on DSB model is proposed for ZnO-based varistor. As a equivalent circuit simulation result dielectric loss factor $tan{\delta}$ shows 2 peaks in low frequency and high frequency regions. The low-frequency peak means the relaxation by deep defects and the high-frequency peak means the relaxation by shallow defects.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2010.03a
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• pp.21-21
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• 2010

(Ba,Sr)$TiO_3$ (BST) thin film with a perovskite structure has potential for the practical application in various functional devices such as nonvolatile-memory components, capacitor, gate insulator of thin-film transistors, and electro-optic devices for display. Normally, the BST thin films derived from sol-gel and sputtering are amorphous or partially crystalline when processed below $600^{\circ}C$. For the purpose of integrating BST thin film directly into a Si-based read-out integrated circuit (ROIC), it is necessary to process the BST film below $400^{\circ}C$. The microstructural and electrical properties of low-temperature crystallized BST film were studied. The BST thin films have been fabricated at $350^{\circ}C$ by UV-assisted rapidly thermal annealing (RTA). The BST films are in a single perovskite phase and have well-defined electrical properties such as high dielectric constant, low dielectric loss, low leakage current density, and high breakdown voltage. Photoexcitation of the organics contained in the sol-gel-derived films by high-intensity UV irradiation facilitates elimination of the organics and formation of the single-crystalline phase films at low temperatures. The amorphous BST thin film was transformed to a highly (h00)-oriented perovskite structure by high oxygen pressure processing (HOPP) at as low as $350^{\circ}C$. The dielectric properties of BST film were comparable to (or even better than) those of the conventionally processed BST films prepared by sputtering or post-annealing at temperature above $600^{\circ}C$. When external pressure was applied to the well-known contractive BST system during annealing, the nucleation energy barrier was reduced; correspondingly, the crystallization temperature decreased. The UV-assisted RTA and HOPP, as compatible with existing MOS technology, let the BST films be integrated into radio-frequency circuit and mixed-signal integrated circuit below the critical temperature of $400^{\circ}C$.

• Journal of the Korean Ceramic Society
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• v.39 no.2
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• pp.159-163
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• 2002

A single phase perovskite relaxor ferroelectric PMN-PT-BT was prepared by a single calcination and the modified mixed oxide process. It was accomplished by ball-milling PbO, $Nb_2O_5,\;Ti(OC_3H_7)_4,\;BaCO_3,\;and\;Mg(NO_3)_2$ instead of MgO, removing the solvent, and then followed by calcination at 900$^{\circ}C$ for 2h. The specimen sintered at 1100$^{\circ}C$/2h showed the sintered density of 7.83 g/$cm^3$, room temperature dielectric constant of 22000, and dielectric loss of 2.5%. Addition of 1.0 mole% (0.3 wt%) of Ag as $AgNO_3$ and followed by calcination at 550$^{\circ}C$/2h lowered the sintering temperature to 900$^{\circ}C$. It still showed the sintered density of 7.88 g/$cm^3$, room temperature dielectric constant of 20000 and dielectric loss of 2.4%.

• Journal of electromagnetic engineering and science
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• v.2 no.2
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• pp.59-64
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• 2002

In this paper, 10$\mu$ m-elevated MEMS CPWs on various substrates are presented. Effective dielectric constants of elevated CPW(ECPW) on polyimide-loaded silicon or alumina substrate are examined and characteristic impedances are also computed versus elevation height. Dispersive property of ECPW and its electromagnetic field distributions are studied through 3-D FDTD algorithm for optimum design. Attenuation of ECPW is measured with TRL calibration procedure and revealed about 3.2 43 lower than that of conventional CPW on the same low-resistivity silicon at 40 CHz. ECPW on polyimide-loaded silicon with overlapped configuration reveals 0.2 dB/mm. Especially, alumina substrate imposes better attenuation than silicon.

• Journal of the Korean Society of Safety
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• v.15 no.4
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• pp.41-46
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• 2000

Silicone rubbers are elastomeric materials and organic copolymers, of which backbone is siloxane with high bonding strength. Silicone rubbers have been used as an power insulator because they are well weather proof, ozone proof and have excellent electric characteristics, thermal stability, cold resistance and low surface energy. Especially, it is known that they have very excellent characteristics at 200[$^{\circ}C$]. For this study, we made silicone rubbers as specimens and measured volume resistivity due to applied voltage and a variation of temperature 25[$^{\circ}C$] to 180[$^{\circ}C$]. Also we measured dielectric loss tangent due to applied voltage at temperature range 25[$^{\circ}C$] to 180[$^{\circ}C$] and frequency range 20[Hz] to 1${\times}10^6$[Hz].

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.29 no.12
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• pp.835-840
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• 2016

In this study, the electrostatic capacity and dielectric loss tangent for $20{\mu}m$ thick thermal conductivity silicone rubber which is heated at 80 degrees for 8 hours has been measured at temperature of $30^{\circ}C{\sim}170^{\circ}C$, frequency of 0.1~1 MHz. The results of degradation evaluation by this study are as follows. In low frequency, it found that the electrostatic capacity decreased with increasing temperature. On the other hand, it confirmed that the range of the electrostatic capacity narrowed with increasing frequency. It confirmed that there are the carboxylic acid structure and C-O bonding at range of wave number 1,000cm-1 to 1,300cm-1.