Micromachined Low-Loss Low-Dispersion Elevated CPW for High-Speed Interconnects

  • S. H. Jeong (Samsung Electronics Co. Ltd.) ;
  • Lee, S. N. (Department of Electrical and Electronics Eng., Yonsei University) ;
  • Lee, S. G. (Samsung Advanced Institute of Technology) ;
  • J. G. Yook (Department of Electrical and Electronics Eng., Yonsei University) ;
  • Kim, Y. J. (Department of Mechatronics eng., Yonsei University) ;
  • Park, H. K. (Department of Electrical and Electronics Eng., Yonsei University)
  • Published : 2002.11.01

Abstract

In this paper, 10$\mu$ m-elevated MEMS CPWs on various substrates are presented. Effective dielectric constants of elevated CPW(ECPW) on polyimide-loaded silicon or alumina substrate are examined and characteristic impedances are also computed versus elevation height. Dispersive property of ECPW and its electromagnetic field distributions are studied through 3-D FDTD algorithm for optimum design. Attenuation of ECPW is measured with TRL calibration procedure and revealed about 3.2 43 lower than that of conventional CPW on the same low-resistivity silicon at 40 CHz. ECPW on polyimide-loaded silicon with overlapped configuration reveals 0.2 dB/mm. Especially, alumina substrate imposes better attenuation than silicon.

Keywords

References

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