• 한국전기전자재료학회논문지
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• 제16권12S호
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• pp.1242-1247
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• 2003

In order to passivate the GaAs surface, silicon-nitride films were fabricated by using laser CVD method. SiH$_4$ and NH$_3$ were used to obtain SiN films in the range of 100∼300$^{\circ}C$ on p-type (100) GaAs substrate. To determine interface characteristics of the metal-insulator-GaAs structure, electrical measurements were performed such as C-V curves and deep level transient spectroscopy (DLTS). The results show that the hysteresis was reduced and interface trap density was lowered to 1,012 ∼ 1,013 at 100 ∼ 200$^{\circ}C$. According to the study of surface leakage current, the passivated CaAs has less leakage current compared to non-passivated substrate.

• 대한전기학회논문지:전기물성ㆍ응용부문C
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• 제49권11호
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• pp.603-608
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• 2000

$(Ba, Sr)TiO_{3}$[BST] thin films were fabricated on the Pt/TiO$_2$/SiO$_2$/Si substrate by the RF sputtering. The structure and dielectric properties of the BST thin films with the substrate temperature were investigated. Increasing the substrate temperature, The BST phase increased and barium multi titanate phases decreased. Increasing the frequency, the dielectric constant decreased and the dielectric loss increased. The dielectric constant and dielectric loss of the BST thin films deposited at 50$0^{\circ}C$ were 300 and 0.018, respectively at 1 kHz. The leakage current density of the BST thin films deposited at 50$0^{\circ}C$ was $10^{-9}$ A/$\textrm{cm}^2$ with applied voltage of 3V. Because of the high dielectric constant(300), low dielectric loss(0.018) and low leakage current($10^{-9}$ A/$\textrm{cm}^2$), BST thin films deposited at 50$0^{\circ}C$ is expecting for the application of DRAM.

• 한국전기전자재료학회논문지
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• 제13권7호
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• pp.592-597
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• 2000

In this study (B $a_{0.5}$/S $r_{0.5}$)Ti $O_3$[BST(50/50)] ceramic thin films were prepared by the Sol-Gel method BST(50/50) stock solution was made and spin-coated on the Indium Tin Oxide(ITO)/glass substrate at 4000 rpm for 30 seconds. The coated films were dried at 35$0^{\circ}C$ for 10 minutes and annealed at 650~75$0^{\circ}C$ for 1 hour. The microstructural properties of the BST(50/50) thin film were studied by the XRD and AFM. The ferroelectric perovskite phase was formed at the annealing condition of 75$0^{\circ}C$ for 1 hour. Dielectric constant and loss of this thin were 370, 3.7% at room temperature respectively. The polarization switching voltage showed the good value of 3V. The leakage current density of the BST(50/50) thin film was 10$^{-7A}$c $m^2$with applied voltage of 1.5V. BST(50/50) thin film capacitors having good dielectric and electrical properties are expecting for the application to the dielectric material of DRAM.RAM.M.

• 대한전기학회:학술대회논문집
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• 대한전기학회 1993년도 하계학술대회 논문집 B
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• pp.1274-1276
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• 1993

The silicon-nitride films formed by laser CVD method are used for passivating GaAs surfaces. The electrical Properties of metal-insulator-GaAs structure are studied to determined the interfacial characteristics by C-V curves and deep level transient spectroscopy(DLTS). The SiN films are photolysisly deposited from $SiH_4\;and\;NH_3$ in the range of $100^{\circ}C-300^{\circ}C$ on P type, (100) GaAs. The hysteresis is reduced and interface trap density is lowered to $10^{12}-10^{13}$ at $100^{\circ}C-200^{\circ}C$. The surface leakage current is studied too. The passivated GaAs have a little leakage current compared to non passivated GaAs.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 1999년도 추계학술대회 논문집
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• pp.33-36
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• 1999

In this paper, $Ba_{0.5}$Sr$_{0.5}$TiO$_3$ thin-films were prepared on Pt/Ti/Si0$_2$/Si substrates by RF magnetron sp-uttering method. We investigated electric and dielectric properties of BST thin-films with various ann-ealing temperature using in-sute RTA. Deposition conditions of BST films were set substrate temperat-ure, 30$0^{\circ}C$ and working gas ratio, Ar:O$_2$=90:10. After BST films deposited, we fabricated a capacitor of MIM structure with Al top electrode for measurement. Post-annealing using RTA performed at 40$0^{\circ}C$, $600^{\circ}C$, 80$0^{\circ}C$ for 60 sec, respectively. Also we exacted crystallization and composition of BST thin-films by XRD analysis. In measurement result, this capacitors showed a dielectric constant of about 200 at 1MHz and leakage current density of 5$\times$10$^{-8}$ A/$\textrm{cm}^2$ at 1.5V Microstructure of BST thin-films exhibited effective quality in low-temperature annealed 71ms than high-temperature annealed 71ms.s.s.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2003년도 추계학술대회 논문집 Vol.16
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• pp.11-14
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• 2003

[ $HfO_2$ ] thin films were deposited at $300^{\circ}C$ on p-type Si (100) substrates using $HfO_2(HfO_xN_y)$ as the precursor by plasma-enhanced chemical vapor deposition and were annealed at $300^{\circ}C$ in nitrogen plasma ambient. Compared with $HfO_2$, nitrogen plasma annealed $HfO_2$ show good chemical stability, higher crystallization temperature, lower leakage current and thermal stability. Leakage current density of nitrogen plasma annealed $HfO_2$ is approximately one order of magnitude lower than that of $HfO_2$ for the same EOT. The improvement in electrical characteristics of nitrogen plasma annealed $HfO_2$ can be explained by the better thermal stability due to nitrogen incorporation.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2003년도 추계학술대회 논문집 Vol.16
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• pp.344-347
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• 2003

The varistor properties of the ZPCCT-based ceramics, which are composed of Zn-Pr-Co-Cr-Tb oxides, were investigated with $Tb_4O_7$ content in the range of $0.0{\sim}1.0\;mol%$. As $Tb_4O_7$ content is increased, the ZPCCT-based ceramics exhibited very high densification based on increasing density in the range of $5.73{\sim}5.84\;g/cm^3$. The varitor voltage($V_{1mA}$) and nonlinear exponent($\alpha$) was increased in the range of 280.9 to 751.8 and 29.8 to 44.4 with increasing $Tb_4O_7$ content, respectively. In particular, the maximum $\alpha$ of 44.4 was obtained from 1.0 mol% $Tb_4O_7$ and the, minimum leakage current($I_{\ell}$) of $1.0\;{\mu}A$ was obtained from 0.5 mol% $Tb_4O_7$.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2004년도 추계학술대회 논문집 Vol.17
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• pp.383-386
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• 2004

DC accelerated aging characteristics of Zn-Pr-Co-Cr-La oxides-based varistors were investigated with various sintering temperatures. The varistors sintered at $1240^{\circ}C$ exhibited the highest nonlinearity, with a nonlinear exponent of 79.3 and a leakage current of $0.3\;{\mu}A$, whereas completely degraded because of thermal runaway owing to low sintered density. The varistors sintered at $1250^{\circ}C$ exhibited not only a high nonlinearity with the nonlinear exponent 61.4 and the leakage current 0.7 ${\mu}A$, but also a high stability with the variation rates of varistor voltage and nonlinear exponent are -1.01% and -10.67%, respectively, under DC stress condition such as $(0.85\;V_{1mA}/115^{\circ}C/24\;h)+(0.90\;V_{1mA}/120^{\circ}C/24\;h)+(0.95\;V_{1mA}/125^{\circ}C/24\;h)+(0.95\;V_{1mA}/150^{\circ}C/24\;h)$.

• 센서학회지
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• 제25권4호
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• pp.252-256
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• 2016

Epitaxially grown GaN layers have a high surface state density, which typically results in a surface leakage current and a photoresponse in undesirable wavelengths in GaN optoelectronic devices. Surface passivation is, therefore, an important process necessary to prevent performance degradation of GaN UV photodetectors. In this study, we propose oxygen-enhanced thermal treatment as a simple surface passivation process without capping layers. The GaN UV photodetector fabricated using a thermal annealing process exhibits improved electrical and photoresponsive characteristics such as a reduced dark current and an enhanced photoresponsive current and UV-to-visible rejection ratio. The results of this study show that the proposed surface passivation method would be useful to enhance the reliability of GaN-based optoelectronic devices.

• 한국재료학회지
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• 제15권3호
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• pp.143-148
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• 2005

The microstructure, electrical properties, and clamping voltage characteristics of $ZnO-Pr_6O_{11}-CoO-Cr_2O_3-Y_2O_3(ZPCCY)-based$ varistor ceramics sintered at $1350^{\circ}C$ were investigated as a function of sintering time from 1 to 3 h. With increasing sintering time, the average grain size and density increased in the range of $11.4\~16.0\;{\mu}m$ and $5.34\~5.54g/cm^3$, respectively, in accordance of increasing sintering time. The nonlinear exponent decreased in the range of $60\~26$ and the leakage current increased in the range of $1.3\~10.7\;{\mu}A$ with increasing sintering time. The clamping voltage ratio increased in the range $1.58\~1.65$ for ratio surge current of 10 A as the sintering time increased.