Journal of Sensor Science and Technology (센서학회지)

The Korean Sensors Society (한국센서학회)
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Surface Passivation Method for GaN UV Photodetectors Using Oxygen Annealing Treatment

  • Lee, Chang-Ju (School of Electronics Engineering, College of IT Engineering, Kyungpook National Unversity) ;
  • Park, Hongsik (School of Electronics Engineering, College of IT Engineering, Kyungpook National Unversity)
  • Received : 2016.07.22
  • Accepted : 2016.07.28
  • Published : 2016.07.31
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Abstract

Epitaxially grown GaN layers have a high surface state density, which typically results in a surface leakage current and a photoresponse in undesirable wavelengths in GaN optoelectronic devices. Surface passivation is, therefore, an important process necessary to prevent performance degradation of GaN UV photodetectors. In this study, we propose oxygen-enhanced thermal treatment as a simple surface passivation process without capping layers. The GaN UV photodetector fabricated using a thermal annealing process exhibits improved electrical and photoresponsive characteristics such as a reduced dark current and an enhanced photoresponsive current and UV-to-visible rejection ratio. The results of this study show that the proposed surface passivation method would be useful to enhance the reliability of GaN-based optoelectronic devices.

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References

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